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JP2007086583A - Method of manufacturing liquid crystal display device - Google Patents

Method of manufacturing liquid crystal display device Download PDF

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Publication number
JP2007086583A
JP2007086583A JP2005277304A JP2005277304A JP2007086583A JP 2007086583 A JP2007086583 A JP 2007086583A JP 2005277304 A JP2005277304 A JP 2005277304A JP 2005277304 A JP2005277304 A JP 2005277304A JP 2007086583 A JP2007086583 A JP 2007086583A
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photoresist
etching
transparent electrode
liquid crystal
display device
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Inventor
Masaru Higuchi
勝 樋口
Hiroshi Yamamoto
宥司 山本
Toru Masuno
徹 増野
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Epson Imaging Devices Corp
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Sanyo Epson Imaging Devices Corp
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Priority to JP2005277304A priority Critical patent/JP2007086583A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing liquid crystal display device with which defective display can be eliminated by removing most of the remainder of etching upon the formation of a transparent electrode and the peeling of the transparent electrode can be prevented. <P>SOLUTION: The method of manufacturing liquid crystal display device includes: a process of forming an ITO film 21 on a counter electrode substrate 20; a process of forming a first photoresist 22 on a region corresponding to a display region D on the ITO film 21; a process of forming a second photoresist 26 over the whole transparent electrode 23 after removing the first photoresist; a process of removing the remainder 24 of etching while protecting the transparent electrode 23 by using the second photoresist 26 as an etching mask; a process of forming an alignment film 25 made of polyimide, etc. over the transparent electrode 23; and a process of subjecting the alignment film 25 to rubbing treatment. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、液晶表示装置の製造方法に関し、特に、駆動トランジスタを備えるTFT基板に液晶を挟んで対向して配置された対極基板側の透明電極の形成方法に関する。   The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly to a method for forming a transparent electrode on the side of a counter electrode substrate disposed opposite to a TFT substrate having a driving transistor with a liquid crystal interposed therebetween.

一般に、液晶表示装置は、図3に示すように、ガラス等の透明絶縁材料から成るTFT基板10と対極基板20との間に液晶30を挟んで対向配置したものである。TFT基板10の表面には、複数の表示画素からなる表示領域Dが画定され、表示画素毎に駆動素子11が形成されている。各駆動素子11はTFT(Thin Film Transistor)で構成されている。駆動素子11は画素電極12に接続されており、駆動素子11を通して画素電極12に表示信号に応じた画素電圧が供給される。また、対極基板20の画素電極12と対向する側の表面には、表示領域Dに対応してITO(Indium Tin Oxide)から成る透明電極23が形成され、この透明電極23を覆って、液晶30を配向させるための配向膜25が形成されている。透明電極23には共通電圧が供給される。   In general, as shown in FIG. 3, the liquid crystal display device has a liquid crystal 30 sandwiched between a TFT substrate 10 made of a transparent insulating material such as glass and a counter electrode substrate 20. A display region D composed of a plurality of display pixels is defined on the surface of the TFT substrate 10, and a driving element 11 is formed for each display pixel. Each drive element 11 is composed of a TFT (Thin Film Transistor). The driving element 11 is connected to the pixel electrode 12, and a pixel voltage corresponding to the display signal is supplied to the pixel electrode 12 through the driving element 11. A transparent electrode 23 made of ITO (Indium Tin Oxide) is formed on the surface of the counter electrode substrate 20 facing the pixel electrode 12 so as to correspond to the display region D. The transparent electrode 23 covers the liquid crystal 30. An orientation film 25 for orienting is formed. A common voltage is supplied to the transparent electrode 23.

透明電極23の形成方法は、図4(a)に示すように、対極基板20上にITO膜21をスパッタ法により成膜し、このITO膜21上の前記表示領域Dに対応する領域に、ホトレジスト材料を塗布し、これを露光及び現像によりパターニングしてホトレジスト22を形成する。その後、このホトレジスト22をエッチングマスクとしてITO膜21をエッチングすることで透明電極23を形成していた。
特開平10−115823号公報
As shown in FIG. 4A, the transparent electrode 23 is formed by forming an ITO film 21 on the counter electrode substrate 20 by sputtering, and in an area corresponding to the display area D on the ITO film 21. A photoresist material is applied and patterned by exposure and development to form a photoresist 22. Thereafter, the transparent electrode 23 was formed by etching the ITO film 21 using the photoresist 22 as an etching mask.
JP-A-10-115823

しかしながら、図4(b)に示すように、ITO膜21のエッチング時間が短いと対極基板20上にエッチング残り24が発生してしまう。その後、図4(c)に示すように、透明電極23を覆ってポリイミド等から成る配向膜25が形成され、この配向膜25に対してラビング処理が施される。すると、ラビング処理によりエッチング残り24が対極基板20上の特定箇所に集まり、これが異物となって外観不良や表示不良を起こすという問題があった。   However, as shown in FIG. 4B, if the etching time of the ITO film 21 is short, an etching residue 24 is generated on the counter electrode substrate 20. Thereafter, as shown in FIG. 4C, an alignment film 25 made of polyimide or the like is formed so as to cover the transparent electrode 23, and the alignment film 25 is subjected to a rubbing process. Then, there is a problem that the etching residue 24 gathers at a specific location on the counter electrode substrate 20 due to the rubbing process, and this becomes a foreign matter, causing an appearance defect or a display defect.

一方、ITO膜21のエッチング時間が長いと、図4(d)に示すように、エッチング残り24は生じないが、オーバーエッチングにより透明電極23の断面が逆テーパー形状となり、ラビング処理により剥離するという問題があった。   On the other hand, if the etching time of the ITO film 21 is long, as shown in FIG. 4D, the etching residue 24 does not occur, but the cross section of the transparent electrode 23 becomes a reverse taper shape due to over-etching and is peeled off by rubbing treatment. There was a problem.

そこで本発明は、複数の表示画素からなる表示領域が画定され、表示画素毎に駆動素子が形成された第1の基板と、前記第1の基板と液晶を挟んで対向して配置され、前記表示領域に対応して表面に透明電極が形成された第2の基板とを備える液晶表示装置の製造方法において、前記第2の基板上の全面に透明導電膜を成膜する工程と、前記透明導電膜上の前記表示領域に対応する領域に第1のホトレジストを形成する第1のホトレジスト工程と、前記第1のホトレジストをエッチングマスクとして前記透明導電膜をエッチングして前記透明電極を形成する第1のエッチング工程と、前記透明電極を覆って第2のホトレジストを形成する第2のホトレジスト工程と、前記第2のホトレジストをエッチングマスクとして前記第2の基板上のエッチング残りをエッチングにより除去する第2のエッチング工程と、前記透明電極を覆って配向膜を形成する工程と、前記配向膜に対してラビング処理を施す工程とを備えることを特徴とするものである。   Accordingly, the present invention provides a first substrate in which a display region composed of a plurality of display pixels is defined, and a driving element is formed for each display pixel, and the first substrate is disposed so as to face the liquid crystal. In a manufacturing method of a liquid crystal display device including a second substrate having a transparent electrode formed on a surface corresponding to a display region, a step of forming a transparent conductive film on the entire surface of the second substrate, and the transparent A first photoresist process for forming a first photoresist in a region corresponding to the display region on the conductive film; and a first electrode for forming the transparent electrode by etching the transparent conductive film using the first photoresist as an etching mask. 1 etching process, a second photoresist process for forming a second photoresist covering the transparent electrode, and an etch on the second substrate using the second photoresist as an etching mask. A second etching step of removing the etching residue by etching, a step of forming an alignment film covering the transparent electrode, and a step of rubbing the alignment film. .

本発明の液晶表示装置の製造方法によれば、透明電極の形成時のエッチング残りの大部分を除去して表示不良を無くすことができるとともに、透明電極の剥離を防止することが可能になる。   According to the method for manufacturing a liquid crystal display device of the present invention, it is possible to eliminate the defective display by removing most of the etching residue when forming the transparent electrode, and to prevent the transparent electrode from peeling off.

次に、本発明の実施形態に係る液晶表示装置の製造方法について説明する。この液晶表示装置は、図3に示したものと同じであり、本発明は透明電極23の形成方法に特徴を有するものである。   Next, a manufacturing method of the liquid crystal display device according to the embodiment of the present invention will be described. This liquid crystal display device is the same as that shown in FIG. 3, and the present invention is characterized by the method of forming the transparent electrode 23.

まず、図1(a)に示すように、ガラス等の透明絶縁材料から成る対極基板20上にITO膜21をスパッタ法により成膜する。ITO膜21の膜厚は1300Åとした。このITO膜21上の表示領域Dに対応する領域に、ホトレジスト材料を塗布し、これを露光及び現像によりパターニングして第1のホトレジスト22を形成する。   First, as shown in FIG. 1A, an ITO film 21 is formed on a counter electrode substrate 20 made of a transparent insulating material such as glass by a sputtering method. The thickness of the ITO film 21 was 1300 mm. A photoresist material is applied to a region corresponding to the display region D on the ITO film 21 and patterned by exposure and development to form a first photoresist 22.

次に、図1(b)に示すように、第1のホトレジスト22をエッチングマスクとしてITO膜21をエッチングする。このエッチングは、塩酸と硝酸とを混合したエッチング液を用いたウエットエッチングであり、エッチング時間は30秒である。これにより、順テーパーの断面形状を有する透明電極23が形成される。このとき、対極基板20上にはエッチング残り24が生じる。   Next, as shown in FIG. 1B, the ITO film 21 is etched using the first photoresist 22 as an etching mask. This etching is wet etching using an etching solution in which hydrochloric acid and nitric acid are mixed, and the etching time is 30 seconds. Thereby, the transparent electrode 23 having a forward tapered cross-sectional shape is formed. At this time, an etching residue 24 is generated on the counter electrode substrate 20.

そこで、第1のホトレジスト22を除去した後に、図1(c)に示すように、透明電極23の全体を覆って第2のホトレジスト26を形成する。第2のホトレジスト26は透明電極23の形成領域からわずかに拡張された領域に形成され、エッチング残り24が形成された領域の大部分が第2のホトレジスト26から露出されている。この第2のホトレジスト26を形成するには、第1のホトレジスト22のパターニングに用いたマスクと同一のマスクを用い、第2のホトレジスト26が透明電極23を覆うように露光量を少なく調整するか、もしくは第2のホトレジスト26が透明電極23を覆うように、第1のホトレジスト22のパターニングに用いたマスクを拡大したマスクを用いてもよい。   Therefore, after removing the first photoresist 22, as shown in FIG. 1C, a second photoresist 26 is formed so as to cover the entire transparent electrode. The second photoresist 26 is formed in a region slightly expanded from the region where the transparent electrode 23 is formed, and most of the region where the etching residue 24 is formed is exposed from the second photoresist 26. In order to form the second photoresist 26, the same mask as that used for patterning the first photoresist 22 is used, and the exposure amount is adjusted so that the second photoresist 26 covers the transparent electrode 23. Alternatively, a mask obtained by enlarging the mask used for patterning the first photoresist 22 so that the second photoresist 26 covers the transparent electrode 23 may be used.

その後、図1(d)に示すように、第2のホトレジスト26をエッチングマスクとして透明電極23を保護しながら、塩酸と硝酸とを混合したエッチング液を用いてエッチング残り24を除去する。このときのエッチング時間は透明電極23の形成時のエッチング時間より長く、300秒である。そして、図2(a)に示すように、第2のホトレジスト26を除去し、図2(b)に示すように、透明電極23を覆ってポリイミド等から成る配向膜25を形成し、この配向膜25に対してラビング処理を施す。   Thereafter, as shown in FIG. 1D, the etching residue 24 is removed using an etching solution in which hydrochloric acid and nitric acid are mixed while protecting the transparent electrode 23 using the second photoresist 26 as an etching mask. The etching time at this time is longer than the etching time at the time of forming the transparent electrode 23 and is 300 seconds. Then, as shown in FIG. 2A, the second photoresist 26 is removed, and as shown in FIG. 2B, an alignment film 25 made of polyimide or the like is formed so as to cover the transparent electrode 23. The film 25 is rubbed.

上記の製造方法によれば、透明電極23に近い箇所に若干のエッチング残り24が残存する可能性はあるが、殆どのエッチング残り24は除去されているので、ラビング処理時に異物が発生することはない。また、透明電極23のオーバーエッチングが防止され、順テーパー形状が得られるので、ラビング処理時に透明電極23が剥離することも防止される。   According to the above manufacturing method, there is a possibility that some etching residue 24 may remain in the vicinity of the transparent electrode 23, but since most of the etching residue 24 is removed, foreign matter is not generated during the rubbing process. Absent. Moreover, since the overetching of the transparent electrode 23 is prevented and a forward tapered shape is obtained, the transparent electrode 23 is also prevented from being peeled off during the rubbing process.

本発明の実施形態に係る液晶表示装置の製造方法を説明する断面図である。It is sectional drawing explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. 本発明の実施形態に係る液晶表示装置の製造方法を説明する断面図である。It is sectional drawing explaining the manufacturing method of the liquid crystal display device which concerns on embodiment of this invention. 液晶表示装置の断面図である。It is sectional drawing of a liquid crystal display device. 従来例に係る液晶表示装置の製造方法を説明する断面図である。It is sectional drawing explaining the manufacturing method of the liquid crystal display device which concerns on a prior art example.

符号の説明Explanation of symbols

10 TFT基板 11 駆動素子 12 画素電極
20 対極基板 21 ITO膜 22 第1のホトレジスト
23 透明電極 24 エッチング残り 25 配向膜
26 第2のホトレジスト 30 液晶
DESCRIPTION OF SYMBOLS 10 TFT substrate 11 Drive element 12 Pixel electrode 20 Counter electrode substrate 21 ITO film 22 1st photoresist 23 Transparent electrode 24 Etching remainder 25 Orientation film 26 2nd photoresist 30 Liquid crystal

Claims (5)

複数の表示画素からなる表示領域が画定され、表示画素毎に駆動素子が形成された第1の基板と、前記第1の基板と液晶を挟んで対向して配置され、前記表示領域に対応して表面に透明電極が形成された第2の基板とを備える液晶表示装置の製造方法において、
前記第2の基板上の全面に透明導電膜を成膜する工程と、
前記透明導電膜上の前記表示領域に対応する領域に第1のホトレジストを形成する第1のホトレジスト工程と、
前記第1のホトレジストをエッチングマスクとして前記透明導電膜をエッチングして前記透明電極を形成する第1のエッチング工程と、
前記透明電極を覆って第2のホトレジストを形成する第2のホトレジスト工程と、
前記第2のホトレジストをエッチングマスクとして前記第2の基板上のエッチング残りをエッチングにより除去する第2のエッチング工程と、
前記透明電極を覆って配向膜を形成する工程と、
前記配向膜に対してラビング処理を施す工程とを備えることを特徴とする液晶表示装置の製造方法。
A display area composed of a plurality of display pixels is defined, and a first substrate on which a driving element is formed for each display pixel is disposed opposite to the first substrate with a liquid crystal interposed therebetween, and corresponds to the display area. And a second substrate having a transparent electrode formed on the surface thereof, and a manufacturing method of a liquid crystal display device,
Forming a transparent conductive film on the entire surface of the second substrate;
A first photoresist step of forming a first photoresist in a region corresponding to the display region on the transparent conductive film;
A first etching step of forming the transparent electrode by etching the transparent conductive film using the first photoresist as an etching mask;
A second photoresist process covering the transparent electrode to form a second photoresist;
A second etching step of removing the etching residue on the second substrate by etching using the second photoresist as an etching mask;
Forming an alignment film covering the transparent electrode;
And a step of subjecting the alignment film to a rubbing process.
前記第2のエッチング工程のエッチング時間は、前記第1のエッチング工程のエッチング時間より長いことを特徴とする請求項1に記載の液晶表示装置の製造方法。 The method for manufacturing a liquid crystal display device according to claim 1, wherein an etching time of the second etching step is longer than an etching time of the first etching step. 前記第1及び第2のホトレジスト工程では同一のマスクを用いるとともに、前記第2のホトレジスト工程では、前記第2のホトレジストが前記透明電極を覆うように露光量が調整されることを特徴とする請求項1に記載の液晶表示装置の製造方法。 The first and second photoresist processes use the same mask, and in the second photoresist process, the exposure amount is adjusted so that the second photoresist covers the transparent electrode. Item 2. A method for manufacturing a liquid crystal display device according to Item 1. 前記第2のホトレジスト工程では、前記第2のホトレジストが前記透明電極を覆うように、前記第1のホトレジスト工程で用いる第1のマスクを拡大した第2のマスクを用いることを特徴とする請求項1に記載の液晶表示装置の製造方法。 The second mask process is characterized in that a second mask obtained by enlarging the first mask used in the first photoresist process is used so that the second photoresist covers the transparent electrode. 2. A method for producing a liquid crystal display device according to 1. 前記透明導電膜はITOからなることを特徴とする請求項1、2、3、4に記載の液晶表示装置の製造方法。 The method for manufacturing a liquid crystal display device according to claim 1, wherein the transparent conductive film is made of ITO.
JP2005277304A 2005-09-26 2005-09-26 Method of manufacturing liquid crystal display device Pending JP2007086583A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017516A1 (en) * 2014-07-30 2016-02-04 シャープ株式会社 Display device and method for producing same
WO2016017515A1 (en) * 2014-07-30 2016-02-04 シャープ株式会社 Display device and method for producing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017516A1 (en) * 2014-07-30 2016-02-04 シャープ株式会社 Display device and method for producing same
WO2016017515A1 (en) * 2014-07-30 2016-02-04 シャープ株式会社 Display device and method for producing same

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