JP2006523958A - 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 - Google Patents
液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 Download PDFInfo
- Publication number
- JP2006523958A JP2006523958A JP2006509951A JP2006509951A JP2006523958A JP 2006523958 A JP2006523958 A JP 2006523958A JP 2006509951 A JP2006509951 A JP 2006509951A JP 2006509951 A JP2006509951 A JP 2006509951A JP 2006523958 A JP2006523958 A JP 2006523958A
- Authority
- JP
- Japan
- Prior art keywords
- transmissive element
- optical element
- workpiece
- transmissive
- immersion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 61
- 238000000671 immersion lithography Methods 0.000 title claims description 8
- 238000007654 immersion Methods 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 36
- 239000012530 fluid Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005286 illumination Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- 239000004033 plastic Substances 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 1
- 238000012937 correction Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000011084 recovery Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7034—Leveling
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Automatic Focus Adjustment (AREA)
Abstract
Description
Claims (40)
- 第1表面を有するワークピースと、
前記ワークピースの第1表面に近接して位置付けられ、前記第1表面上に像を投影するために構成された光学素子であり、前記ワークピースの前記第1表面と前記光学素子の間にギャップがあり、前記ギャップが実質的に液浸流体で満たされている光学素子と、
前記液浸流体を通じて前記ワークピースの前記第1表面上に光線を放出するように構成されたオートフォーカス光源及び前記ワークピースの前記第1表面で反射される前記光線を受光するように構成された受光装置を含むオートフォーカス装置とを備える装置。 - さらに前記オートフォーカス光源と前記液浸流体の間に位置付けられる透過性素子を含み、前記透過性素子は前記透過性素子と前記液浸流体との間の境界面を通じて前記光線を通過させるように構成されている請求項1に記載の装置。
- 前記透過性素子は、前記透過性素子と前記液浸流体との間の境界面で前記光線の屈折を調整するように構成されている請求項2に記載の装置。
- 前記境界面において前記光線が0度から90度の範囲で屈折する請求項3に記載の装置。
- 前記透過性素子が、ガラス、プラスチック、フッ化カルシウム及び石英ガラスからなる一群から選択される一つの材料から形成されている請求項2に記載の装置。
- 前記透過性素子が前記光学素子である請求項2に記載の装置。
- 前記透過性素子が前記光学素子に近接して位置付けられている請求項2に記載の装置。
- 前記透過性素子が、長方形、正方形、楕円形、くさび型、及び球形からなる一群から選択される一種の形状である請求項2に記載の装置。
- 前記透過性素子と前記光学素子の間に液体が供給される請求項7に記載の装置。
- 前記透過性素子と前記光学素子との間の空間が減圧にされる請求項7に記載の装置。
- さらに前記透過性素子と前記光学素子の間の空間を通じて前記液浸流体を上昇させるための吸引力提供デバイスを備え、それにより外部の空気は前記空間内に入り込むことが防止される請求項7に記載の装置。
- さらに前記透過性素子と前記光学素子の間の空間に流体を供給するように構成されている流体供給デバイスを備える請求項7に記載の装置。
- 液浸リソグラフィ方法であって、
第1表面を有するワークピースを提供する工程と、
光学素子を前記ワークピースの前記第1表面に近接して位置付け、前記ワークピースの前記第1表面と前記光学素子の間にギャップが存在している工程と、
前記光学素子を通じて前記第1表面上に像を投影する工程と、
前記ギャップを実質的に液浸流体で満たす工程と、
オートフォーカス光源からのオートフォーカス光を前記液浸流体を通して前記ワークピースの前記第1表面上へ送る工程と、
前記ワークピースの前記第1表面から反射された前記光線を受光機で受光することとを含む液浸リソグラフィ方法。 - さらに前記オートフォーカス光源と前記液浸流体の間に透過性素子を位置付ける工程を含み、前記透過性素子は前記光線を前記透過性素子と前記液浸流体の間の界面を通過させるように構成されている請求項13に記載の方法。
- 前記透過性素子が、前記透過性素子と前記液浸流体との間の界面における前記光線の屈折を調整するように構成されている請求項14に記載の方法。
- 前記界面において前記光線が0度から90度の範囲で屈折する請求項15に記載の方法。
- 前記透過性素子が、ガラス、プラスチック、フッ化カルシウム及び石英ガラスからなる一群から選択される一つの材料で形成されている請求項14に記載の方法。
- 前記透過性素子が前記光学素子である請求項14に記載の方法。
- 前記透過性素子が前記光学素子に近接して位置付けられている請求項14に記載の方法。
- 前記透過性素子が、長方形、正方形、楕円形、くさび型及び球形からなる一群から選択される一つの形状である請求項14に記載の方法。
- さらに前記透過性素子と前記光学素子の間に液体を供給する工程を含む請求項19に記載の方法。
- さらに前記透過性素子と前記光学素子の間の空間を減圧にする工程を含む請求項19に記載の方法。
- さらに前記透過性素子と前記光学素子の間の空間を通じて前記液浸流体を上昇させるための吸引力提供デバイスを提供する工程を含み、それにより外部の空気が前記空間内に入り込むことが防止される請求項19に記載の方法。
- さらに前記透過性素子と前記光学素子の間の空間に流体を提供するように構成される流体供給デバイスを提供する工程を含む請求項19に記載の方法。
- 液浸リソグラフィ装置であって、
レチクルを保持するために設けられたレチクルステージと、
第1表面を有するワークピースを保持するために設けられたワーキングステージと、
照明源及び前記ワークピースの第1表面に近接して位置付けられた光学素子を有し、且つ、前記第1表面の上に像を投影するように構成された光学システムであって、前記ワークピースの第1表面と前記光学素子との間にギャップが存在し、そのギャップは実質的に液浸流体で満たされている光学システムと、
前記液浸流体を通じて前記ワークピースの第1表面上に光線を放出するように構成されたオートフォーカス光源及び、前記ワークピースの第1表面から反射された前記光線を受光するように構成された受光機を含むオートフォーカスシステムとを備える液浸リソグラフィ装置。 - さらに前記オートフォーカス光源と前記液浸流体の間に位置付けられた透過性素子を備え、前記透過性素子は光線を前記透過性素子と前記液浸流体の間の界面を通過させるように構成されている請求項25に記載の装置。
- 前記透過性素子が、前記透過性素子と前記液浸流体の間の界面で前記光線の屈折を調整するように構成されている請求項26に記載の装置。
- 前記界面において前記光線が0度から90度の範囲で屈折する請求項27に記載の装置。
- 前記透過性素子が、ガラス、プラスチック、フッ化カルシウム及び石英ガラスからなる一群から選択される一つの材料から形成されている請求項26に記載の装置。
- 前記透過性素子が前記光学素子である請求項26に記載の装置。
- 前記透過性素子が前記光学素子に近接して位置付けられている請求項26に記載の装置。
- 前記透過性素子が長方形、正方形、楕円形、くさび型及び球形からなる一群から選択される一つの形状である請求項26に記載の装置。
- 前記透過性素子と前記光学素子の間に液体が供給される請求項31に記載の装置。
- 前記透過性素子と前記光学素子との間の前記空間が減圧にされている請求項31に記載の装置。
- さらに、前記透過性素子と前記光学素子との間の前記空間を通じて前記液浸流体を上昇させるための吸引力提供デバイスを備え、外部の空気が前記空間内に入り込むことが防止される請求項31に記載の装置。
- さらに、前記透過性素子と前記光学素子との間の前記空間に液体を提供するように構成された液体供給デバイスを備える請求項31に記載の装置。
- 請求項25の液浸リソグラフィ装置で製造される物体。
- 請求項25の液浸リソグラフィ装置によって像が形成されたウェハ。
- 請求項25の液浸リソグラフィ装置を利用するリソグラフィ法を用いて物体を製造するための方法。
- 請求項25の液浸リソグラフィ装置を利用するリソグラフィ法を用いてウェハをパターンニングする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46439203P | 2003-04-17 | 2003-04-17 | |
PCT/US2004/011287 WO2004095135A2 (en) | 2003-04-17 | 2004-04-12 | Optical arrangement of autofocus elements for use with immersion lithography |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010013490A Division JP2010093299A (ja) | 2003-04-17 | 2010-01-25 | 液浸リソグラフィ装置、液浸リソグラフィ方法、及びデバイス製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006523958A true JP2006523958A (ja) | 2006-10-19 |
Family
ID=33310880
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006509951A Pending JP2006523958A (ja) | 2003-04-17 | 2004-04-12 | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
JP2010013490A Pending JP2010093299A (ja) | 2003-04-17 | 2010-01-25 | 液浸リソグラフィ装置、液浸リソグラフィ方法、及びデバイス製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010013490A Pending JP2010093299A (ja) | 2003-04-17 | 2010-01-25 | 液浸リソグラフィ装置、液浸リソグラフィ方法、及びデバイス製造方法 |
Country Status (8)
Country | Link |
---|---|
US (8) | US7414794B2 (ja) |
EP (1) | EP1614000B1 (ja) |
JP (2) | JP2006523958A (ja) |
KR (2) | KR101369582B1 (ja) |
CN (1) | CN1774667A (ja) |
AT (1) | ATE542167T1 (ja) |
SG (2) | SG152078A1 (ja) |
WO (1) | WO2004095135A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008160155A (ja) * | 2003-05-13 | 2008-07-10 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
Families Citing this family (129)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7362508B2 (en) * | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP4352874B2 (ja) * | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
SG157962A1 (en) | 2002-12-10 | 2010-01-29 | Nikon Corp | Exposure apparatus and method for producing device |
US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
CN101872135B (zh) | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
US7242455B2 (en) | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
EP1598855B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus and method, and method of producing apparatus |
KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
EP1612850B1 (en) | 2003-04-07 | 2009-03-25 | Nikon Corporation | Exposure apparatus and method for manufacturing a device |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
WO2004090634A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
WO2004092833A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
CN101825847B (zh) | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
KR101861493B1 (ko) | 2003-04-11 | 2018-05-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
KR101273713B1 (ko) | 2003-05-06 | 2013-06-12 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치, 노광 방법 및 디바이스 제조 방법 |
US7348575B2 (en) * | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
TWI511181B (zh) | 2003-05-23 | 2015-12-01 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
TWI503865B (zh) | 2003-05-23 | 2015-10-11 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
EP2453465A3 (en) | 2003-05-28 | 2018-01-03 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing a device |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
TWI515769B (zh) | 2003-06-19 | 2016-01-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2466383B1 (en) | 2003-07-08 | 2014-11-19 | Nikon Corporation | Wafer table for immersion lithography |
JP4844123B2 (ja) | 2003-07-09 | 2011-12-28 | 株式会社ニコン | 露光装置、及びデバイス製造方法 |
WO2005006418A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP2264532B1 (en) | 2003-07-09 | 2012-10-31 | Nikon Corporation | Exposure apparatus and device manufacturing method |
WO2005010960A1 (ja) | 2003-07-25 | 2005-02-03 | Nikon Corporation | 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法 |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP1653501B1 (en) | 2003-07-28 | 2012-09-19 | Nikon Corporation | Exposure apparatus, device producing method, and exposure apparatus controlling method |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP2261740B1 (en) * | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
CN101303536B (zh) | 2003-08-29 | 2011-02-09 | 株式会社尼康 | 曝光装置和器件加工方法 |
KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
WO2005029559A1 (ja) | 2003-09-19 | 2005-03-31 | Nikon Corporation | 露光装置及びデバイス製造方法 |
KR101743378B1 (ko) | 2003-09-29 | 2017-06-15 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
JP4335213B2 (ja) | 2003-10-08 | 2009-09-30 | 株式会社蔵王ニコン | 基板搬送装置、露光装置、デバイス製造方法 |
KR101319109B1 (ko) | 2003-10-08 | 2013-10-17 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법 |
TW201738932A (zh) | 2003-10-09 | 2017-11-01 | Nippon Kogaku Kk | 曝光裝置及曝光方法、元件製造方法 |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
CN102163005B (zh) | 2003-12-03 | 2014-05-21 | 株式会社尼康 | 投影曝光装置、器件制造方法以及光学部件 |
JP4720506B2 (ja) | 2003-12-15 | 2011-07-13 | 株式会社ニコン | ステージ装置、露光装置、及び露光方法 |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191394A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
KR101204157B1 (ko) | 2004-01-20 | 2012-11-22 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치 |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (ja) | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
WO2005093791A1 (ja) | 2004-03-25 | 2005-10-06 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005119368A2 (en) | 2004-06-04 | 2005-12-15 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
KR101433496B1 (ko) | 2004-06-09 | 2014-08-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4894515B2 (ja) | 2004-07-12 | 2012-03-14 | 株式会社ニコン | 露光装置、デバイス製造方法、及び液体検出方法 |
EP1801853A4 (en) | 2004-08-18 | 2008-06-04 | Nikon Corp | EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100593751B1 (ko) * | 2004-11-16 | 2006-06-28 | 삼성전자주식회사 | 오토 포커스 시스템, 오토 포커스 방법 및 이를 이용한노광장치 |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446850B2 (en) | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1681597B1 (en) | 2005-01-14 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR101513840B1 (ko) | 2005-01-31 | 2015-04-20 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
CN102262361B (zh) | 2005-02-10 | 2013-12-25 | Asml荷兰有限公司 | 曝光装置和曝光方法 |
US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006313866A (ja) * | 2005-05-09 | 2006-11-16 | Canon Inc | 露光装置及び方法 |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
US7709813B2 (en) | 2006-04-03 | 2010-05-04 | Nikon Corporation | Incidence surfaces and optical windows that are solvophobic to immersion liquids |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
US7826030B2 (en) | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US7900641B2 (en) | 2007-05-04 | 2011-03-08 | Asml Netherlands B.V. | Cleaning device and a lithographic apparatus cleaning method |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
US7742163B2 (en) * | 2008-07-08 | 2010-06-22 | Tokyo Electron Limited | Field replaceable units (FRUs) optimized for integrated metrology (IM) |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
US9389349B2 (en) | 2013-03-15 | 2016-07-12 | Kla-Tencor Corporation | System and method to determine depth for optical wafer inspection |
KR102138089B1 (ko) | 2013-07-04 | 2020-07-28 | 한국과학기술원 | 리소그래피용 메타-포토레지스트 |
WO2022081370A1 (en) * | 2020-10-15 | 2022-04-21 | Applied Materials, Inc. | In-line metrology systems, apparatus, and methods for optical devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10154659A (ja) * | 1996-10-07 | 1998-06-09 | Nikon Corp | リソグラフィーアライナー、製造装置、または検査装置用の焦点及びチルト調節システム |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
Family Cites Families (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2102922C3 (de) * | 1971-01-22 | 1978-08-24 | Ernst Leitz Wetzlar Gmbh, 6330 Wetzlar | Anordnung zum selbsttätigen Fokussieren auf in optischen Geräten zu betrachtende Objekte |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3374413B2 (ja) * | 1992-07-20 | 2003-02-04 | 株式会社ニコン | 投影露光装置、投影露光方法、並びに集積回路製造方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
KR100300618B1 (ko) * | 1992-12-25 | 2001-11-22 | 오노 시게오 | 노광방법,노광장치,및그장치를사용하는디바이스제조방법 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
DE19604363A1 (de) * | 1995-02-23 | 1996-08-29 | Zeiss Carl Fa | Zusatzmodul zur ortsaufgelösten Fokusvermessung |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
KR20010048755A (ko) | 1999-11-29 | 2001-06-15 | 윤종용 | 오토 포커스 시스템을 갖는 노광 장치의 포커싱 방법 |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
TW527652B (en) * | 2002-02-06 | 2003-04-11 | Taiwan Semiconductor Mfg | Manufacturing method of selection gate for the split gate flash memory cell and its structure |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
JP4370554B2 (ja) * | 2002-06-14 | 2009-11-25 | 株式会社ニコン | オートフォーカス装置およびオートフォーカス付き顕微鏡 |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100585476B1 (ko) | 2002-11-12 | 2006-06-07 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조방법 |
CN101349876B (zh) | 2002-11-12 | 2010-12-01 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
US6992750B2 (en) | 2002-12-10 | 2006-01-31 | Canon Kabushiki Kaisha | Exposure apparatus and method |
SG165169A1 (en) * | 2002-12-10 | 2010-10-28 | Nikon Corp | Liquid immersion exposure apparatus |
CN100370533C (zh) | 2002-12-13 | 2008-02-20 | 皇家飞利浦电子股份有限公司 | 用于照射层的方法和用于将辐射导向层的装置 |
EP1579435B1 (en) | 2002-12-19 | 2007-06-27 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
KR100971441B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
JP4488005B2 (ja) | 2003-04-10 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ装置用の液体を捕集するための流出通路 |
JP4656057B2 (ja) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
WO2004092833A2 (en) | 2003-04-10 | 2004-10-28 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
WO2004090634A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
CN101825847B (zh) | 2003-04-11 | 2013-10-16 | 株式会社尼康 | 用于沉浸式光刻光学系统的清洗方法 |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
KR101861493B1 (ko) | 2003-04-11 | 2018-05-28 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
JP2006523958A (ja) | 2003-04-17 | 2006-10-19 | 株式会社ニコン | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
EP2270599A1 (en) * | 2003-05-13 | 2011-01-05 | ASML Netherlands BV | Lithographic apparatus |
EP2261741A3 (en) | 2003-06-11 | 2011-05-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
WO2005054953A2 (en) | 2003-11-24 | 2005-06-16 | Carl-Zeiss Smt Ag | Holding device for an optical element in an objective |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
JP2007516613A (ja) | 2003-12-15 | 2007-06-21 | カール・ツアイス・エスエムテイ・アーゲー | 少なくとも1つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ |
EP1697798A2 (en) | 2003-12-15 | 2006-09-06 | Carl Zeiss SMT AG | Projection objective having a high aperture and a planar end surface |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101288187B1 (ko) | 2004-01-14 | 2013-07-19 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
CN101799637B (zh) | 2004-01-16 | 2012-07-04 | 卡尔蔡司Smt有限责任公司 | 照明光学装置、显微光刻投射系统及装置制造方法 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
KR101204157B1 (ko) | 2004-01-20 | 2012-11-22 | 칼 짜이스 에스엠테 게엠베하 | 마이크로 리소그래픽 투영 노광 장치 및 그 투영 렌즈를 위한 측정 장치 |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
WO2005074606A2 (en) | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
KR101115111B1 (ko) | 2004-02-13 | 2012-04-16 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈 |
KR20070012371A (ko) | 2004-02-18 | 2007-01-25 | 코닝 인코포레이티드 | 극자외선을 갖는 고 개구수 이미지용 반사굴절 이미지시스템 |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7712905B2 (en) | 2004-04-08 | 2010-05-11 | Carl Zeiss Smt Ag | Imaging system with mirror group |
-
2004
- 2004-04-12 JP JP2006509951A patent/JP2006523958A/ja active Pending
- 2004-04-12 SG SG200716980-8A patent/SG152078A1/en unknown
- 2004-04-12 EP EP04759834A patent/EP1614000B1/en not_active Expired - Lifetime
- 2004-04-12 SG SG2012028072A patent/SG194246A1/en unknown
- 2004-04-12 WO PCT/US2004/011287 patent/WO2004095135A2/en active Application Filing
- 2004-04-12 KR KR1020127029277A patent/KR101369582B1/ko active IP Right Grant
- 2004-04-12 AT AT04759834T patent/ATE542167T1/de active
- 2004-04-12 KR KR1020057019798A patent/KR20050122269A/ko not_active Application Discontinuation
- 2004-04-12 CN CNA2004800103892A patent/CN1774667A/zh active Pending
-
2005
- 2005-09-26 US US11/234,279 patent/US7414794B2/en not_active Expired - Fee Related
-
2006
- 2006-12-01 US US11/606,914 patent/US7570431B2/en not_active Expired - Fee Related
-
2009
- 2009-06-19 US US12/457,742 patent/US8018657B2/en not_active Expired - Fee Related
- 2009-08-24 US US12/461,762 patent/US8094379B2/en not_active Expired - Fee Related
-
2010
- 2010-01-25 JP JP2010013490A patent/JP2010093299A/ja active Pending
-
2011
- 2011-12-07 US US13/313,399 patent/US8599488B2/en not_active Expired - Fee Related
-
2013
- 2013-10-29 US US14/066,315 patent/US8810915B2/en not_active Expired - Fee Related
-
2014
- 2014-07-14 US US14/330,263 patent/US8953250B2/en not_active Expired - Fee Related
-
2015
- 2015-01-05 US US14/589,399 patent/US9086636B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10154659A (ja) * | 1996-10-07 | 1998-06-09 | Nikon Corp | リソグラフィーアライナー、製造装置、または検査装置用の焦点及びチルト調節システム |
JPH11176727A (ja) * | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008160155A (ja) * | 2003-05-13 | 2008-07-10 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
JP2010157766A (ja) * | 2003-05-13 | 2010-07-15 | Asml Netherlands Bv | リソグラフィ装置 |
Also Published As
Publication number | Publication date |
---|---|
US9086636B2 (en) | 2015-07-21 |
EP1614000A4 (en) | 2007-05-09 |
US20070076303A1 (en) | 2007-04-05 |
US20060017900A1 (en) | 2006-01-26 |
US7570431B2 (en) | 2009-08-04 |
WO2004095135A3 (en) | 2004-12-09 |
US8094379B2 (en) | 2012-01-10 |
US20090262322A1 (en) | 2009-10-22 |
US8810915B2 (en) | 2014-08-19 |
CN1774667A (zh) | 2006-05-17 |
US20090317751A1 (en) | 2009-12-24 |
EP1614000B1 (en) | 2012-01-18 |
ATE542167T1 (de) | 2012-02-15 |
SG152078A1 (en) | 2009-05-29 |
US20140320833A1 (en) | 2014-10-30 |
US20150109595A1 (en) | 2015-04-23 |
US8599488B2 (en) | 2013-12-03 |
US20120075609A1 (en) | 2012-03-29 |
US20140055762A1 (en) | 2014-02-27 |
US8018657B2 (en) | 2011-09-13 |
SG194246A1 (en) | 2013-11-29 |
EP1614000A2 (en) | 2006-01-11 |
KR20120132694A (ko) | 2012-12-07 |
US8953250B2 (en) | 2015-02-10 |
KR101369582B1 (ko) | 2014-03-04 |
KR20050122269A (ko) | 2005-12-28 |
JP2010093299A (ja) | 2010-04-22 |
US7414794B2 (en) | 2008-08-19 |
WO2004095135A2 (en) | 2004-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2006523958A (ja) | 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造 | |
KR101647859B1 (ko) | 다수의 다공성 재료들을 이용하여 다공성 재료에서의 진공을 제어하는 장치 및 방법 | |
JP4352874B2 (ja) | 露光装置及びデバイス製造方法 | |
JP2005019616A (ja) | 液浸式露光装置 | |
KR20120116512A (ko) | 노광 장치 및 디바이스 제조 방법 | |
KR20070085214A (ko) | 노광 방법, 디바이스 제조 방법, 및 기판 | |
JP2005209705A (ja) | 露光装置及びデバイス製造方法 | |
US8634055B2 (en) | Apparatus and method to control vacuum at porous material using multiple porous materials | |
JP4701606B2 (ja) | 露光方法及び露光装置、デバイス製造方法 | |
KR20090034736A (ko) | 노광장치, 노광 방법 및 디바이스 제조방법 | |
JP2005311198A (ja) | 露光装置、合焦位置検出装置及びそれらの方法、並びにデバイス製造方法 | |
JP2007043145A (ja) | 液浸露光用基板、露光方法及びデバイス製造方法 | |
US20100220301A1 (en) | Apparatus and method to control liquid stagnation in immersion liquid recovery |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070323 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091124 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20091218 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100316 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100423 |