JP2006339224A - Substrate for led and led package - Google Patents
Substrate for led and led package Download PDFInfo
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- JP2006339224A JP2006339224A JP2005159041A JP2005159041A JP2006339224A JP 2006339224 A JP2006339224 A JP 2006339224A JP 2005159041 A JP2005159041 A JP 2005159041A JP 2005159041 A JP2005159041 A JP 2005159041A JP 2006339224 A JP2006339224 A JP 2006339224A
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 230000017525 heat dissipation Effects 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 44
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
この発明は、LED用基板、特に放熱性に優れたLED用基板、およびこのLED用基板を用いたLEDパッケージに関する。 The present invention relates to an LED substrate, in particular, an LED substrate excellent in heat dissipation, and an LED package using the LED substrate.
従来より、LEDチップを用いたLEDパッケージとして図3Aに示す構成のものが提案されている。このLEDパッケージ(30)は、金属基板(31)の表面に絶縁層(32)および銅箔よりなる配線部(配線パターン)(33)が積層された基板(34)にLEDチップ(20)が実装され、LEDチップ(20)がボンディングワイヤ(21)を介して配線部(33)と電気的に接続されたものである。前記金属基板(32)としてはアルミニウム等の熱伝導性金属が用いられ、絶縁層(32)としてはガラスエポキシシート等が用いられている。また、前記LEDチップ(20)としては例えば、サファイヤ基板上に窒化ガリウム系の発光部を形成したものが用いられている。 Conventionally, an LED package using an LED chip has been proposed as shown in FIG. 3A. This LED package (30) has an LED chip (20) mounted on a substrate (34) in which a wiring portion (wiring pattern) (33) made of an insulating layer (32) and copper foil is laminated on the surface of a metal substrate (31). The LED chip (20) is mounted and electrically connected to the wiring part (33) via the bonding wire (21). A thermal conductive metal such as aluminum is used as the metal substrate (32), and a glass epoxy sheet or the like is used as the insulating layer (32). As the LED chip (20), for example, a sapphire substrate having a gallium nitride-based light emitting portion formed thereon is used.
また、セラミック基板上にLEDチップをアクリル系接着剤で接合したLEDパッケージも提案されている(特許文献1参照)。 An LED package in which an LED chip is bonded to a ceramic substrate with an acrylic adhesive has also been proposed (see Patent Document 1).
また、上述のLEDパッケージでは、LEDチップの光を効率良く前面側に取り出すためにLEDチップの周囲に反射部や枠体を設けた構造としている。例えば、図3Aに示したLEDパッケージ(30)では、LEDチップ(20)の周囲に円錐状に開口した反射部材(35)を接着した構造を示している。 Further, the above-described LED package has a structure in which a reflecting portion and a frame are provided around the LED chip in order to efficiently extract the light from the LED chip to the front side. For example, the LED package (30) shown in FIG. 3A shows a structure in which a reflective member (35) opened conically around the LED chip (20) is bonded.
また、図3Bは従来のもう一つのLEDパッケージ(40)を示している。このLEDパッケージ(40)は金属基板(31)、絶縁層(32)、配線部(33)を積層した基板(34)にざくり加工で凹所を形成して凹所(36)の底部にLEDチップ(20)を実装したものであり、LEDチップ(20)を金属板(31)に直接実装することで放熱性の向上を図ったものである(特許文献2参照)。 FIG. 3B shows another conventional LED package (40). The LED package (40) is formed by punching a substrate (34) in which a metal substrate (31), an insulating layer (32), and a wiring portion (33) are stacked, and forming a recess in the bottom of the recess (36). The chip (20) is mounted, and the heat dissipation is improved by directly mounting the LED chip (20) on the metal plate (31) (see Patent Document 2).
さらに図3Cに示すように、金属板に直接LEDチップを実装するタイプのLEDパッケージ(41)では金属基板(42)に突出部(43)を設け、さらにこの突出部(43)に凹所(44)を形成し、該凹所(44)の底部にLEDチップ(20)を実装するととも突出部(43)を反射部として用いることがが提案されている。図3Cにおいて、(32)は絶縁層、(33)は配線部、(45)は樹脂封止部である。(特許文献3参照)。
ところで、近年のLEDチップは発熱量が大きいため、なお一層高い放熱性が求められている。しかしながら、図3Aの絶縁層(32)上にLEDチップ(20)を実装したLEDパッケージ(30)、あるいはセラミック基板にアクリル系接着剤でLEDチップを接合したLEDパッケージでは、増大する発熱量に対して放熱性が不十分であった。 By the way, since recent LED chips generate a large amount of heat, higher heat dissipation is required. However, in the LED package (30) in which the LED chip (20) is mounted on the insulating layer (32) in FIG. 3A or the LED package in which the LED chip is bonded to the ceramic substrate with an acrylic adhesive, The heat dissipation was insufficient.
また、図3BのLEDパッケージ(40)では、絶縁層(32)を介さずに金属基板(31)にLEDチップ(20)を実装することで放熱性は改善されたが、側方に放射された光を効率良く前方に取り出すことができず反射効率が低下してしまうという問題があった。 In addition, in the LED package (40) of FIG. 3B, the heat dissipation is improved by mounting the LED chip (20) on the metal substrate (31) without the insulating layer (32), but it is emitted to the side. There is a problem that the reflected light is not efficiently extracted forward and the reflection efficiency is lowered.
また、図3CのLEDパッケージ(41)では金属基板(42)に突出部(43)および凹所(44)を形成するためには複雑な加工が必要であり、生産性に問題があった。また、凹所(36)(44)を形成する加工を施すと加工面の表面平滑度が悪くなり、LEDチップ(20)との接合性が悪くなることもあった。 Further, in the LED package (41) of FIG. 3C, in order to form the protrusions (43) and the recesses (44) on the metal substrate (42), complicated processing is required, which causes a problem in productivity. In addition, when processing for forming the recesses (36) and (44) is performed, the surface smoothness of the processed surface is deteriorated, and the bonding property to the LED chip (20) may be deteriorated.
本発明は、上述した技術背景に鑑み、放熱性に優れるとともに簡単な工程で製造できるLED用基板、およびこのLED用基板を用いたLEDパッケージの提供を目的とする。 In view of the above-described technical background, an object of the present invention is to provide an LED substrate that has excellent heat dissipation and can be manufactured by a simple process, and an LED package using the LED substrate.
即ち、本発明のLED用基板は下記〔1〕〜〔5〕に記載の構成を有する。 That is, the LED substrate of the present invention has the configuration described in [1] to [5] below.
〔1〕 放熱部の平坦面にLED取付孔が穿設された絶縁層が接合され、前記絶縁層上に配線パターンを構成する配線部が設けられていることを特徴とするLED用基板。 [1] An LED substrate, wherein an insulating layer having an LED mounting hole is bonded to a flat surface of a heat radiation portion, and a wiring portion constituting a wiring pattern is provided on the insulating layer.
〔2〕 前記放熱部は金属板またはヒートシンクである前項1に記載のLED用基板。 [2] The LED substrate according to [1], wherein the heat dissipating part is a metal plate or a heat sink.
〔3〕 前記LED取付孔の周囲に反射部が設けられている前項1または2に記載のLED用基板。 [3] The LED substrate according to [1] or [2], wherein a reflective portion is provided around the LED mounting hole.
〔4〕 前記絶縁層と配線部との合計厚さがLEDチップの高さよりも小さい前項1〜3のいずれか1項に記載のLED用基板。
[4] The LED substrate according to any one of
〔5〕 前記絶縁層はガラスクロスにエポキシ樹脂を含浸させたガラスエポキシシートである前項1〜4のいずれか1項に記載のLED用基板。 [5] The LED substrate according to any one of [1] to [4], wherein the insulating layer is a glass epoxy sheet obtained by impregnating a glass cloth with an epoxy resin.
また、本発明のLED用基板の製造方法は下記〔6〕〔7〕に記載の構成を有する。 Moreover, the manufacturing method of the board | substrate for LED of this invention has the structure as described in following [6] [7].
〔6〕 シート状の絶縁層の一面側に配線パターンを構成する配線部を接合して配線板を製作する配線板製作工程と、前記配線板にLED取付孔を穿設する穿孔工程と、放熱部の平坦面に前記配線板の他面側を接合する接合工程とを有することを特徴とするLED用基板の製造方法。 [6] A wiring board manufacturing process for manufacturing a wiring board by bonding a wiring portion constituting a wiring pattern on one side of a sheet-like insulating layer, a perforating process for drilling an LED mounting hole in the wiring board, and heat dissipation And a bonding step of bonding the other surface side of the wiring board to the flat surface of the part.
〔7〕 配線板製作工程において絶縁層の他面側に接着層を積層して三層の配線板を製作し、前記接合工程において熱プレスにより放熱部に前記配線板を接合する前項6に記載のLED用基板の製造方法。 [7] The method described in 6 above, wherein a three-layer wiring board is manufactured by laminating an adhesive layer on the other surface side of the insulating layer in the wiring board manufacturing process, and the wiring board is bonded to the heat radiating portion by heat pressing in the bonding process. Of manufacturing a substrate for LED.
さらに、本発明のLEDパッケージは下記〔8〕〜〔10〕の構成を有する。 Furthermore, the LED package of the present invention has the following configurations [8] to [10].
〔8〕 前項1〜5のいずれか1項に記載のLED用基板において、LED取付孔内で放熱部上にLEDチップが実装され、該LEDチップが配線部に電気的に接続されていることを特徴とするLEDパッケージ。 [8] In the LED substrate according to any one of 1 to 5 above, the LED chip is mounted on the heat dissipation part in the LED mounting hole, and the LED chip is electrically connected to the wiring part. LED package characterized by
〔9〕 前記配線板の上面がLEDチップの上面よりも低いものとなされている前項8に記載のLEDパッケージ。 [9] The LED package according to [8], wherein an upper surface of the wiring board is lower than an upper surface of the LED chip.
〔10〕 前記配線板の取付用孔内および反射部内が樹脂で封止されている前項8または9に記載のLEDパッケージ。 [10] The LED package according to item 8 or 9, wherein the inside of the mounting hole and the inside of the reflection portion of the wiring board are sealed with resin.
〔1〕の発明にかかるLED用基板によれば、LEDチップを放熱部に直接実装できるため、放熱効率が良い。また、放熱部には何ら加工する必要がないため、製造工程が簡単で生産性が良い。 According to the substrate for LED according to the invention of [1], the LED chip can be directly mounted on the heat radiating portion, so that the heat radiation efficiency is good. Moreover, since it is not necessary to process the heat radiation part, the manufacturing process is simple and the productivity is good.
〔2〕の発明にかかるLED用基板によれば、特に放熱効率が良い。 The LED substrate according to the invention [2] has particularly good heat dissipation efficiency.
〔3〕〔4〕の各発明にかかるLED用基板によれば、LEDチップが放射する光を効率良く前方に取り出すことができる。 According to the substrate for LED concerning each invention of [3] [4], the light which LED chip radiates can be taken out efficiently ahead.
〔5〕の発明にかかるLED用基板によれば、LED取付孔の形成が容易である。 According to the LED substrate according to the invention of [5], formation of the LED mounting hole is easy.
〔6〕〔7〕の各発明にかかるLED用基板の製造方法によれば、本発明のLED用基板を製造できる。 [6] According to the method for manufacturing an LED substrate according to each invention of [7], the LED substrate of the present invention can be manufactured.
〔8〕〔10〕の各発明にかかるLEDパッケージによれば、LEDチップが放熱部に直接実装されているため、放熱効率が良い。 [8] According to the LED package of each invention of [10], since the LED chip is directly mounted on the heat dissipation portion, the heat dissipation efficiency is good.
〔9〕の発明にかかるLEDパッケージによれば、LEDチップが放射する光を効率良く前方に取り出すことができる。 According to the LED package of [9], the light emitted from the LED chip can be efficiently extracted forward.
図1に本発明のLED用基板(1)の一実施形態を示し、図2に前記LED用基板(1)を用いたLEDパッケージ(2)の一実施形態を示す。 FIG. 1 shows an embodiment of an LED substrate (1) of the present invention, and FIG. 2 shows an embodiment of an LED package (2) using the LED substrate (1).
LED用基板(1)は、アルミニウムや銅等の金属平板からなる放熱部(10)の表面に絶縁層(11)接着層(13)を介して積層され、この絶縁層(11)上に配線パターンに形成された銅箔からなる配線部(12)が積層され、さらに配線部(12)上に樹脂シート(16)が積層一体化されたものである。前記絶縁層(11)にはLED取付孔(14)が穿設されるとともに、樹脂シート(16)にはLED取付孔(14)より径が大きくかつ開口側でさらに径大となされた円錐孔(17)が穿設されている。この円錐孔(17)には、孔の内周形状に対応し、内周面を鏡面加工したアルミニウム製リング(18)が嵌入され、反射部を形成している。そして、LED取付孔(14)および円錐孔(17)により放熱部(10)が露出し、かつLED取付孔(14)の周囲では配線部(12)が露出している。 The LED substrate (1) is laminated on the surface of the heat radiating part (10) made of a metal flat plate such as aluminum or copper via an insulating layer (11) and an adhesive layer (13), and wiring is formed on the insulating layer (11). A wiring part (12) made of copper foil formed in a pattern is laminated, and a resin sheet (16) is laminated and integrated on the wiring part (12). The insulating layer (11) is provided with an LED mounting hole (14), and the resin sheet (16) has a conical hole having a diameter larger than that of the LED mounting hole (14) and larger on the opening side. (17) is drilled. The conical hole (17) is fitted with an aluminum ring (18) corresponding to the inner peripheral shape of the hole and having a mirror-finished inner peripheral surface to form a reflecting portion. The heat dissipating part (10) is exposed by the LED mounting hole (14) and the conical hole (17), and the wiring part (12) is exposed around the LED mounting hole (14).
前記LED用基板(1)は、例えば以下の工程により製造される。
〔1〕配線板製作工程
シート状の絶縁層(11)の一面側に所要の配線パターンを有する配線部(12)を接合し、他面側にホットメルト接着剤による接着層(13)を接合し、三層構造の配線板(15)を製作する。
〔2〕穿孔工程
前記配線板(15)のLED取付予定位置にLED取付孔(14)を穿設する。
〔3〕反射部製作工程
樹脂シート(16)に円錐孔(17)を穿設する。円錐孔(17)の小径側(配線板に接合される側側)の直径は配線板(15)のLED取付孔(14)よりも大きく形成する。そして、円錐孔(17)内にリング(18)を嵌入する。
〔4〕接合工程
放熱部(10)上に、配線板(15)と樹脂シート(16)とをLED取付孔(14)と円錐孔(17)の位置を合わせて重ね、熱プレスする。この熱プレスにより、放熱部(10)と配線板(15)、配線板(15)と樹脂シート(15)が一体に接合されるとともに、接着層(13)と絶縁層(11)、絶縁層層(11)と配線部(12)もさらに強固に接合され、LED用基板(1)となる。
The LED substrate (1) is manufactured, for example, by the following steps.
[1] Wiring board manufacturing process A wiring part (12) having a required wiring pattern is bonded to one side of a sheet-like insulating layer (11), and an adhesive layer (13) made of hot melt adhesive is bonded to the other side. Then, a three-layer wiring board (15) is manufactured.
[2] Drilling step An LED mounting hole (14) is drilled at the LED mounting planned position of the wiring board (15).
[3] Reflector manufacturing process A conical hole (17) is formed in the resin sheet (16). The diameter of the conical hole (17) on the small diameter side (side joined to the wiring board) is larger than the LED mounting hole (14) of the wiring board (15). Then, the ring (18) is inserted into the conical hole (17).
[4] Joining Step On the heat radiation part (10), the wiring board (15) and the resin sheet (16) are overlapped with the positions of the LED mounting holes (14) and the conical holes (17), and hot pressed. By this heat pressing, the heat radiating part (10) and the wiring board (15), the wiring board (15) and the resin sheet (15) are integrally bonded, and the adhesive layer (13), the insulating layer (11), and the insulating layer The layer (11) and the wiring part (12) are also more firmly joined to form the LED substrate (1).
上述したLED用基板(1)において、放熱部(10)は、熱伝導性が良く配線板(15)を接合する面に凹凸がなく平坦なものを使用する。例えば、アルミニウムや銅等の熱伝導性の高い金属平板、あるいはこれらの金属製のヒートシンクを推奨できる。ヒートシンクは、平板上に多数のフィンを櫛歯状に立設したもの、作動流体を封入したートパイプ、内部に冷却液を流通させる冷却器等を例示できる。これらはいずれも優れた放熱性を有しLEDチップ(20)が発生する熱を効率良く放熱できる。また、前記放熱部(10)と接着層(13)との接着力を向上させるために、放熱部(10)の表面に陽極酸化皮膜を形成することも好ましい。陽極酸化皮膜のポア内に接着層(13)を構成する接着剤が入り込み、アンカー効果による高い接着力を得ることができる。皮膜の種類は限定されず任意の皮膜等を適宜用いることができる。このような陽極酸化皮膜の厚さは0.1〜5μmとするのが好ましい。 In the LED substrate (1) described above, the heat radiating section (10) has a good thermal conductivity and has a flat surface with no irregularities on the surface to which the wiring board (15) is joined. For example, a metal plate having high thermal conductivity such as aluminum or copper, or a heat sink made of these metals can be recommended. Examples of the heat sink include a plate in which a large number of fins are erected on a flat plate, a toe pipe enclosing a working fluid, a cooler for circulating a coolant inside, and the like. All of these have excellent heat dissipation and can efficiently dissipate the heat generated by the LED chip (20). It is also preferable to form an anodized film on the surface of the heat radiating portion (10) in order to improve the adhesive force between the heat radiating portion (10) and the adhesive layer (13). The adhesive constituting the adhesive layer (13) enters the pores of the anodized film, and a high adhesive force due to the anchor effect can be obtained. The kind of film is not limited, and any film or the like can be used as appropriate. The thickness of such an anodized film is preferably 0.1 to 5 μm.
絶縁層(11)の材料は限定されず、樹脂、セラミック等の周知のものを任意に用いることができる。特に推奨できる材料はガラスクロスにエポキシ樹脂を含浸させたガラスエポキシシートである。ガラスエポキシシートは、電気的特性および機械的特性が優れているとともに柔軟性があり、取付用孔(14)を打ち抜く際にも割れることがなく穿設作業を容易に行える。また、絶縁層(11)は放熱部(10)の全域に存在している必要はなく、配線部(12)下に存在して放熱部(10)と配線部(12)とを絶縁できれば良い。 The material of the insulating layer (11) is not limited, and any known material such as resin or ceramic can be used. A particularly recommended material is a glass epoxy sheet in which a glass cloth is impregnated with an epoxy resin. The glass epoxy sheet has excellent electrical and mechanical properties and is flexible, and can be easily drilled without being broken when the mounting hole (14) is punched. In addition, the insulating layer (11) does not need to be present in the entire area of the heat radiating portion (10). .
配線部(12)の材料も限定されず、銅、アルミニウム等の周知のものを任意に用いることができる。 The material of the wiring part (12) is not limited, and any known material such as copper or aluminum can be arbitrarily used.
接着層(13)もまた、放熱部(10)および絶縁層(11)の両者に接合可能なものであれば材質は限定されない。上述したようにエポキシ樹脂等のホットメルト接着剤を用いて熱プレスにより放熱部(10)に接合しても良いし、粘着性の接着剤を用いて放熱部(10)に貼付しても良い。 The material of the adhesive layer (13) is not limited as long as it can be bonded to both the heat dissipating part (10) and the insulating layer (11). As described above, it may be bonded to the heat radiating part (10) by hot pressing using a hot melt adhesive such as an epoxy resin, or may be attached to the heat radiating part (10) using a sticky adhesive. .
また、LEDチップ(20)の光を前方(図面の上方)に効率良く取り出すために、前記配線板(15)の厚さは取付予定のLEDチップ(20)よりも小さいことが好ましい。特に好ましい配線板(15)の厚さはLEDチップの高さの2/3以下である。一般に、LEDチップ(20)においては主として上面から光が放射され、一部は側面上部からも放射される。このため、配線板(15)の厚さをLEDチップ(20)の高さよりも小さくして、配線板(15)の上面をLEDチップ(20)の上面よりも低くすれば、光を効率良く前方に取り出すことができる。また、配線板(15)の厚さをLEDチップ(20)の2/3以下とすれば、側方に放射される光も確実に反射部で反射させて前方に取り出すことができる。 In order to efficiently extract the light from the LED chip (20) forward (upward in the drawing), the thickness of the wiring board (15) is preferably smaller than the LED chip (20) to be attached. A particularly preferable thickness of the wiring board (15) is 2/3 or less of the height of the LED chip. In general, in the LED chip (20), light is mainly emitted from the upper surface, and a part is also emitted from the upper side surface. Therefore, if the thickness of the wiring board (15) is made smaller than the height of the LED chip (20) and the upper surface of the wiring board (15) is made lower than the upper surface of the LED chip (20), the light is efficiently Can be taken forward. Further, if the thickness of the wiring board (15) is 2/3 or less of that of the LED chip (20), the light emitted to the side can be surely reflected by the reflecting portion and taken out forward.
また、図2に例示した反射部は樹脂シート(16)の円錐孔(17)に鏡面加工されたアルミニウム製のリング(18)を嵌入したものであるが、表面が鏡面に加工されたものであればアルミニウム製に限定されない。また、リング(18)に代えて、円錐孔(17)の壁面を銀等でめっきして反射膜を形成するものとしても良い。また、配線板(15)への接合は上述したように放熱部(10)、配線板(15)、樹脂シート(16)を重ねて熱プレスにより一括して接合する他、放熱部(10)と配線板(15)を接合後に別途樹脂シート(16)を接合しても良い。さらに、樹脂シートを用いることなく図3Bに例示したようなリング状の反射部材(35)を取り付けても良い。 In addition, the reflecting portion illustrated in FIG. 2 has a mirror-finished aluminum ring (18) inserted into the conical hole (17) of the resin sheet (16), but the surface is processed into a mirror surface. It is not limited to aluminum. Further, instead of the ring (18), the reflection film may be formed by plating the wall surface of the conical hole (17) with silver or the like. In addition, as described above, the heat sink (10), the wiring board (15), and the resin sheet (16) are stacked and bonded together by hot pressing, and the heat sink (10) The resin sheet (16) may be joined separately after joining the wiring board (15). Furthermore, you may attach the ring-shaped reflection member (35) illustrated to FIG. 3B, without using a resin sheet.
なお、本発明のLED用基板は、製造方法を上述した工程に限定するものではない。例えば、絶縁層と配線部の二層構造の配線板を製作し、この配線板を接着剤により放熱部に接合しても良いし、全ての部材を一工程で接合して良い。 In addition, the board | substrate for LED of this invention does not limit a manufacturing method to the process mentioned above. For example, a wiring board having a two-layer structure of an insulating layer and a wiring part may be manufactured, and this wiring board may be joined to the heat dissipation part with an adhesive, or all members may be joined in one step.
図2のLEDパッケージ(2)において、前記LED用基板(1)のLED取付孔(14)の底部、即ち放熱部(10)上にLEDチップ(20)が実装され、LEDチップ(20)はボンディングワイヤ(21)を介して配線部(13)に電気的に接続されている。また、前記配線板(15)のLED取付孔(14)内および樹脂シート(16)の円錐孔(17)内は樹脂(19)が充填されて封止されている。LEDチップ(20)の接合には例えば銀ペーストが用いられ、封止樹脂には、アクリル樹脂、エポキシ樹脂、シリコン樹脂等が用いられる。また、前記LEDチップ(20)の種類も何ら限定されず、任意のLEDチップを用いることができる。例えば、サファイヤ基板上に窒化ガリウム系の発光部を形成したLEDチップを挙示できる。 In the LED package (2) of FIG. 2, the LED chip (20) is mounted on the bottom of the LED mounting hole (14) of the LED substrate (1), that is, the heat dissipating part (10). It is electrically connected to the wiring part (13) via the bonding wire (21). The LED mounting hole (14) of the wiring board (15) and the conical hole (17) of the resin sheet (16) are filled with resin (19) and sealed. For example, silver paste is used for bonding the LED chip (20), and acrylic resin, epoxy resin, silicon resin, or the like is used as the sealing resin. The type of the LED chip (20) is not limited at all, and any LED chip can be used. For example, an LED chip in which a gallium nitride-based light emitting portion is formed on a sapphire substrate can be listed.
上記LEDパッケージ(2)は、LEDチップ(20)が絶縁層を介することなく直接放熱部(10)に実装されているため、LEDチップ(20)で発生した熱が速やかに放熱部(10)に吸熱され放熱される。前記LED用基板(1)は放熱部(10)の平坦面を何ら加工することなく前記配線板(15)を接合したものであるから、製造工程が簡単であり生産性が良い。また、放熱部(10)に凹所や突出部を形成するための加工が不要であるため、既存の各種放熱部をそのまま利用することができ、LEDチップの接合性も良い。しかも、配線板(15)の厚さをLEDチップ(20)よりも薄く形成したことで光を効率良く前方に取り出すことができる。 In the LED package (2), since the LED chip (20) is directly mounted on the heat radiating part (10) without an insulating layer interposed therebetween, the heat generated in the LED chip (20) is quickly radiated from the heat radiating part (10). The heat is absorbed and released. Since the LED substrate (1) is obtained by joining the wiring board (15) without processing the flat surface of the heat radiating section (10), the manufacturing process is simple and the productivity is good. Moreover, since the process for forming a recessed part and a protrusion part in a heat radiating part (10) is unnecessary, various existing heat radiating parts can be utilized as they are, and the joining property of LED chip is also good. Moreover, the light can be efficiently extracted forward by forming the wiring board (15) thinner than the LED chip (20).
上述した〔1〕〜〔4〕の工程に基づき、図1に示すLED用基板(1)を製作した。 Based on the above-described steps [1] to [4], the LED substrate (1) shown in FIG. 1 was manufactured.
放熱部(10)として、熱伝導性の高い6000系合金からなり厚さ1mmのアルミニウム平板を用い、表面に厚さ0.1μmの陽極酸化皮膜を形成した。また、絶縁層(11)として厚さ0.1mmのガラスエポキシシート、配線部(12)として厚さ0.018mmの銅箔、接着層(13)として厚さ0.04mmのエポキシ樹脂シートを用いた。
〔1〕配線板製作工程
前記絶縁層(11)の一面側に配線パターンの配線部(12)を接合し、他面側に接合層(13)を接合し、三層構造で厚さ0.158mmの配線板(15)を製作した。
〔2〕穿設工程
前記配線板(15)の所要位置に直径2.5mmのLED取付孔(14)を穿設した。
〔3〕反射部製作工程
樹脂シート(16)に小径側直径が4mm、大径側直径が6mmの円錐孔(17)を穿設し、円錐孔(17)に内周面を鏡面加工したアルミニウム製リング(18)を嵌入した。
〔4〕接合工程
前記放熱部(10)上に、配線板(15)と樹脂シート(16)とをLED取付孔(14)と円錐孔(17)の位置を合わせて重ね、これらを熱プレスして一体に接合し、LED用基板(1)とした。
As the heat radiating portion (10), an aluminum flat plate made of a 6000 series alloy having high thermal conductivity and having a thickness of 1 mm was used, and an anodic oxide film having a thickness of 0.1 μm was formed on the surface. Further, a glass epoxy sheet having a thickness of 0.1 mm is used as the insulating layer (11), a copper foil having a thickness of 0.018 mm is used as the wiring portion (12), and an epoxy resin sheet having a thickness of 0.04 mm is used as the adhesive layer (13). It was.
[1] Wiring board manufacturing process The wiring portion (12) of the wiring pattern is bonded to one surface side of the insulating layer (11), and the bonding layer (13) is bonded to the other surface side. A 158 mm wiring board (15) was produced.
[2] Drilling Step An LED mounting hole (14) having a diameter of 2.5 mm was drilled at a required position of the wiring board (15).
[3] Reflector manufacturing process A conical hole (17) having a diameter of 4 mm on the small diameter side and a diameter of 6 mm on the large diameter side is drilled in the resin sheet (16), and the inner peripheral surface of the conical hole (17) is mirror-finished aluminum. A ring (18) made was inserted.
[4] Joining process On the heat radiating part (10), the wiring board (15) and the resin sheet (16) are overlapped with the positions of the LED mounting holes (14) and the conical holes (17), and these are hot-pressed. Then, they were integrally bonded to obtain an LED substrate (1).
さらに、上記工程で製作したLED用基板(1)を用いて図2に示すLEDパッケージ(2)を製作した。 Further, an LED package (2) shown in FIG. 2 was manufactured using the LED substrate (1) manufactured in the above process.
前記LED用基板(1)のLED取付孔(14)内に、1mm×1mm×高さ0.3mmの角形LEDチップ(20)を銀ペーストを用いて放熱部(10)に接合した。前記銀ペーストの厚さは0.1mmであり、放熱部(10)の上面からLEDチップ(20)の上面までの高さは0.4mmとなった。従って、前記配線板(15)の厚さ(0.158mm)は実質的にLEDチップ(20)の約40%となっている。次に、前記LEDチップ(20)と配線部(12)とをボンディングワイヤ(21)で電気的に接続した。そして、前記LED取付孔(14)内および円錐孔(17)内に、封止樹脂(19)としてシリコン樹脂を充填し、LEDパッケージ(2)とした。 In the LED mounting hole (14) of the LED substrate (1), a square LED chip (20) of 1 mm × 1 mm × height 0.3 mm was joined to the heat radiating part (10) using silver paste. The thickness of the silver paste was 0.1 mm, and the height from the upper surface of the heat dissipating part (10) to the upper surface of the LED chip (20) was 0.4 mm. Accordingly, the thickness (0.158 mm) of the wiring board (15) is substantially about 40% of the LED chip (20). Next, the LED chip (20) and the wiring part (12) were electrically connected by a bonding wire (21). The LED mounting hole (14) and the conical hole (17) were filled with silicon resin as a sealing resin (19) to obtain an LED package (2).
さらに、同じ材料を用い、LEDチップを放熱部に直接取り付ける本発明構造のLED用基板(3)(図4A)、および絶縁層上に取り付ける従来構造のLED用基板(4)(図4B)を製作し、放熱性能比較試験を行った。 Furthermore, using the same material, the LED substrate (3) of the present invention structure (FIG. 4A) for attaching the LED chip directly to the heat dissipation part, and the LED substrate (4) (FIG. 4B) of the conventional structure attached on the insulating layer Produced and heat dissipation performance comparison test.
LEDチップ(20)として1mm×1mm×高さ0.3mm、出力1Wの角形LEDチップ、放熱部(10)として6000系合金からなり10mm×10mm×厚さ1mmのアルミニウム平板、絶縁層(11)として厚さ0.08mmガラスエポキシシート、配線部(12)として厚さ0.035mmの銅箔、接着層(13)として厚さ0.04mmのエポキシ樹脂シートを用いた。なお上記実施例と同様に、放熱部(10)の表面には厚さ0.1μmの陽極酸化皮膜を形成した。 LED chip (20) 1mm x 1mm x height 0.3mm, square LED chip with 1W output, heat dissipation part (10) made of 6000 series alloy, 10mm x 10mm x 1mm thickness aluminum flat plate, insulating layer (11) 0.08 mm thick glass epoxy sheet, 0.035 mm thick copper foil as the wiring part (12), and 0.04 mm thick epoxy resin sheet as the adhesive layer (13). As in the above example, an anodic oxide film having a thickness of 0.1 μm was formed on the surface of the heat radiating portion (10).
図4Aに示すLED用基板(3)においては、上述した実施例と同様に三層構造の配線板(15)に穿設したLED取付孔(14)内において放熱部(10)上にLEDチップ(20)を実装し、ボンディングワイヤ(21)で配線部(12)に接続した。一方、図4Bに示すLED用基板(4)は、絶縁層(11)を接合層(13)を介して放熱部(10)上に接合したものであり、絶縁層(11)上にLEDチップ(20)を実装し、ボンディングワイヤ(21)で配線部(12)に接続した。 In the LED substrate (3) shown in FIG. 4A, the LED chip is placed on the heat dissipating part (10) in the LED mounting hole (14) formed in the three-layer wiring board (15) as in the above-described embodiment. (20) was mounted and connected to the wiring section (12) with a bonding wire (21). On the other hand, the LED substrate (4) shown in FIG. 4B is obtained by bonding an insulating layer (11) on a heat radiation part (10) via a bonding layer (13), and an LED chip on the insulating layer (11). (20) was mounted and connected to the wiring section (12) with a bonding wire (21).
これらのLED用板(3)(4)に通電して基板の表面温度を測定したところ、図4AのLED用基板(3)は84℃、図4BのLED用基板(4)は117℃であった。これらの比較によりLEDチップを放熱部に直接実装することにより放熱性能が向上することを確認できた。 When the surface temperature of the substrate was measured by energizing these LED plates (3) and (4), the LED substrate (3) in FIG. 4A was 84 ° C., and the LED substrate (4) in FIG. 4B was 117 ° C. there were. From these comparisons, it was confirmed that the heat dissipation performance was improved by directly mounting the LED chip on the heat dissipation portion.
本発明のLED用基板は放熱性に優れているため、発熱量の大きい高輝度LEDを搭載したLEDパッケージに好適に利用できる。 Since the LED substrate of the present invention is excellent in heat dissipation, it can be suitably used for an LED package on which a high-brightness LED having a large heat generation amount is mounted.
1,3…LED用基板
2…LEDパッケージ
10…放熱部
11…絶縁層
12…配線部
13…接着層
14…LED取付孔
15…配線板
18…リング(反射部)
19…封止樹脂
20…LEDチップ
1,3 ... LED substrate
2 ... LED package
10… Heat dissipation part
11… Insulating layer
12 ... Wiring section
13… Adhesive layer
14 ... LED mounting hole
15 ... wiring board
18 ... Ring (reflection part)
19… Sealing resin
20 ... LED chip
Claims (10)
The LED package according to claim 8 or 9, wherein an inside of the mounting hole and the inside of the reflection portion of the wiring board are sealed with a resin.
Priority Applications (4)
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JP2005159041A JP2006339224A (en) | 2005-05-31 | 2005-05-31 | Substrate for led and led package |
PCT/JP2006/310845 WO2006129690A1 (en) | 2005-05-31 | 2006-05-31 | Substrate for led and led package |
KR20077027835A KR20080014808A (en) | 2005-05-31 | 2006-05-31 | Substrate for led and led package |
CN 200680018945 CN101185174A (en) | 2005-05-31 | 2006-05-31 | Substrate for LED and LED package |
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Publication number | Publication date |
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WO2006129690A1 (en) | 2006-12-07 |
CN101185174A (en) | 2008-05-21 |
KR20080014808A (en) | 2008-02-14 |
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