JP2006210870A - Module with built-in component, and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a module with a built-component of high connection reliability of inner via. <P>SOLUTION: A module with a built-in component 100 comprises an electric insulation layer 4 of a mixture containing inorganic filler and thermo-setting resin, and a pair of wiring boards 5 and 6 covering upper and lower surfaces of the electric insulation layer 4 respectively. A circuit component 3 embedded in the electric insulation layer 4 is jointed to at least one of the pair of wiring boards 5 and 6, and an inner via 2 solidified at the lower temperature than the thermo-setting resin of the electric insulation layer 4 electrically connects both wiring boards 5 and 6 together, which is provided to the electric insulation layer 4. A dummy via 1 which is solidified at the lower temperature than the thermo-setting resin of the electric insulation layer 4 is provided to the inner via 2 on the side opposite to the circuit component 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a component built-in module in which an active component such as a semiconductor and a passive component such as a capacitor are built in an electrical insulating layer, and a method for manufacturing the same.

  In recent years, with the demand for higher performance and miniaturization of electronic devices, circuit boards used in electronic devices are also desired to be small and dense. In response to such a demand, a conventional glass / epoxy substrate having a through-hole structure is becoming unable to cope with high-density mounting. For this reason, as a means for realizing high-density mounting, development of a high-density mounting board adopting an inner via connection method capable of connecting LSIs and components at the shortest distance is in progress.

  Resin substrates and ceramic substrates are common as high-density mounting substrates that employ such an inner via connection method. Since the resin substrate is made of a resin material, the thermal conductivity is low. For this reason, the higher the density of circuit component mounting, the more difficult it is to dissipate heat generated from the components. On the other hand, since the ceramic substrate has high thermal conductivity, the ceramic substrate is excellent in heat dissipation but is expensive.

  For these reasons, a high-density mounting substrate using a mixture of an inorganic filler and a thermosetting resin as a substrate material has recently been attracting attention (see, for example, Patent Document 1).

  This high-density mounting board can be connected to the inner vias in the same manner as the resin board and ceramic board described above, and not only enables high-density wiring, but also includes an inorganic filler with high thermal conductivity in the board material. It has better heat dissipation than the resin substrate. And since the manufacturing process in the high temperature of 1000 degreeC or more like a ceramic substrate is unnecessary, installation cost does not start. Furthermore, since active components such as semiconductors and passive components such as capacitors can be built in the substrate, higher density and higher performance can be expected.

  Hereinafter, a configuration and a manufacturing method of a high-density mounting substrate using such an inorganic filler and a thermosetting resin as a substrate material will be described with reference to the drawings.

  FIG. 7 is a cross-sectional view showing a configuration of a conventional component built-in module 90. The component built-in module 90 includes an electrical insulating layer 94 made of a mixture containing an inorganic filler and a thermosetting resin. Two-layer wiring boards 95 and 96 are provided to cover the upper and lower surfaces of the electrical insulating layer 94, respectively. A wiring pattern 97 is formed on both surfaces of both wiring boards 95 and 96, and a via land 82 is formed on the surface on the electric insulating layer 94 side.

  A circuit component 93 embedded in the electrical insulating layer 94 is bonded to the wiring pattern 97 of the wiring board 95. An inner via 92 cured at a lower temperature than the thermosetting resin of the electrical insulating layer 94 is provided in the electrical insulating layer 94 by electrically connecting the wiring boards 95 and 96 with via lands 82. A circuit component 83 is bonded to the wiring pattern 97 on the surface of the wiring board 96.

The component built-in module 90 configured as described above is manufactured as follows. 8A to 8C and FIG. 9 are cross-sectional views showing a conventional method for manufacturing the component built-in module 90. Referring to FIG. 8A, first, an uncured electrical insulating layer 80 in which an inner via 92 is formed is prepared. The electrical insulating layer 80 is made of a sheet-like material in which a thermosetting resin such as an uncured epoxy resin and an inorganic filler such as alumina are mixed. The inner via 92 is formed by forming a through hole in the electric insulating layer 80 by a device such as a laser or a puncher, and is a low temperature thermosetting resin that cures at a lower temperature than the thermosetting resin of the electric insulating layer 80 and a conductive metal such as silver. A conductive paste containing powder is formed by filling the through holes.

  Then, a wiring board 95 having a two-layer structure in which the wiring pattern 97 and the via land 82 are formed is manufactured, and a circuit component 93 is bonded to the wiring pattern 97 and a wiring board 96 having a two-layer structure in which the wiring pattern 97 and the via land 82 are formed. Make it. The wiring boards 95 and 96 are made of a mixed material of a thermosetting resin and an inorganic filler equivalent to the electrical insulating layer 80 described above, or a material of an existing glass / epoxy board or ceramic board.

  Next, as shown in FIG. 8C, the lower mold 13, the wiring board 95, the electrical insulating layer 80, the wiring board 96, and the upper mold 14 are set in this order on the pressing jig. Thereafter, both wiring boards 95 and 96 are heated using a hot press apparatus (not shown) at a temperature lower than the curing temperature of the thermosetting resin of the electrical insulating layer 80 and higher than the curing temperature of the inner via 92. The circuit component 93 is embedded in the electrical insulating layer 80 by applying pressure to the electrical insulating layer 80. Thereafter, the electrical insulating layer 94 shown in FIG. 9 is formed by heating at a temperature higher than the curing temperature of the thermosetting resin of the electrical insulating layer 80 to cure the thermosetting resin.

Then, after taking out from the pressing jig, when the circuit component 83 is joined to the wiring pattern 97 on the surface of the wiring substrate 96, the component built-in module 90 having the configuration shown in FIG. 7 is obtained.
Japanese Patent Laid-Open No. 11-220262

  In the configuration of the conventional component built-in module 90 described above, there are some problems to be solved that occur when the circuit component 93 is embedded in the electrical insulating layer 94. The reason will be described in detail below.

  As described above with reference to FIGS. 8C and 9, when the circuit component 93 is embedded in the uncured electrical insulating layer 80 and heated and pressurized, the uncured thermosetting resin contained in the electrical insulating layer 80. Is softened and easily flows, so that the circuit component 93 can be easily embedded. On the other hand, the inner vias 92 of the electrical insulating layer 80 are compressed by the via lands 82 of both the wiring boards 95 and 96 to obtain a low resistance via connection.

  However, the softened thermosetting resin is pressed by the embedded circuit component 93 and flows radially toward the outside of the electrical insulating layer 80. Therefore, as shown in FIG. 9, the inner via 92 around the circuit component 93 may be pressed by the flowing thermosetting resin and may be displaced from the via land 82. Thereby, the connection between the inner via 92 and the via land 82 becomes insufficient. For this reason, the connection resistance of the inner via 92 is increased, and there is a problem that the reliability is adversely affected.

  In addition, since semiconductor elements used in such component built-in modules will be operated at higher frequencies in the future, problems of malfunction due to the influence of generated noise to the outside and disturbance noise are expected.

  An object of the present invention is to provide a component built-in module that can solve the problems of the conventional example and a method for manufacturing the module.

  A component built-in module according to the present invention includes an electrical insulating layer made of a mixture containing an inorganic filler and a thermosetting resin, and a pair of wiring boards that respectively cover the upper and lower surfaces of the electrical insulating layer, and at least one of the pair of wiring boards. The circuit parts embedded in the electrical insulation layer are joined, and an inner via that is cured at a lower temperature than the thermosetting resin of the electrical insulation layer is provided in the electrical insulation layer by electrically connecting both wiring boards. An inner via misalignment prevention body cured at a lower temperature than the thermosetting resin of the electrical insulating layer is provided on the opposite side of the circuit component with respect to the via.

  According to this configuration, the inner vias cured at a lower temperature than the thermosetting resin of the electrical insulating layer are prevented from being displaced on the opposite side of the circuit component to the inner vias cured at a lower temperature than the thermosetting resin of the electrical insulating layer. A body is provided. For this reason, when the circuit component is embedded in the electrical insulating layer, the flow of the thermosetting resin that is pushed by the circuit component and travels toward the inner via can be suppressed by the inner via misalignment prevention body. As a result, it is possible to prevent displacement of the inner via due to the flow of the thermosetting resin. Further, since the inner via position misalignment prevention body is made of a conductive material, a shielding effect can be obtained and the influence of noise can be prevented.

  Another component built-in module according to the present invention includes an electrical insulating layer made of a mixture containing an inorganic filler and a thermosetting resin, and a pair of wiring boards respectively covering the upper and lower surfaces of the electrical insulating layer, and at least one of the pair of wiring boards. On one side, circuit components embedded in the electrical insulating layer are joined, and an inner via hardened by light is provided in the electrical insulating layer by electrically connecting both wiring boards. An inner via misalignment prevention body hardened by light is provided on the side.

  According to this configuration, the inner via misalignment prevention body cured by light is provided on the opposite side of the circuit component with respect to the inner via cured by light. When the circuit component is embedded in the electrical insulating layer, the flow of the thermosetting resin that is pushed by the circuit component toward the inner via can be suppressed by the inner via misalignment prevention body. As a result, it is possible to prevent displacement of the inner via due to the flow of the thermosetting resin.

  It is preferable that a plurality of inner vias are disposed so as to surround the circuit components, and a plurality of inner via position misalignment prevention bodies are disposed on the outer peripheral portion of the electrical insulating layer. It is possible to prevent the electrical insulating layer from protruding from the outer peripheral portion of the wiring board and causing unevenness in thickness.

  The plurality of inner via position shift prevention bodies are preferably arranged so as to surround the plurality of inner vias. This is because the inner via misalignment prevention body is disposed on the opposite side of the circuit component with respect to the inner via.

  The inner via position misalignment prevention body is preferably formed of a dummy via. This is because the inner via misalignment prevention body can be manufactured in the same process as the inner via.

  Moreover, it is preferable that the inner via position misalignment prevention bodies are electrically connected to each other. The inner via misalignment prevention body is preferably connected to the ground. This is because the noise from the inside and outside of the module can be blocked by the shielding effect of the inner via inner position deviation prevention body.

  The inner via and the dummy via include a metal powder containing at least one selected from silver, copper, gold, and nickel, and a low-temperature thermosetting resin that cures at a lower temperature than the photo-curing resin or the thermosetting resin of the electrical insulating layer. It is preferable to include. This is because an inner via misalignment prevention body can be manufactured using the same material as the inner via.

  The electrical insulating layer preferably contains 70 wt% or more and 95 wt% or less of an inorganic filler and 5 wt% or more and 30 wt% or less of a thermosetting resin. This is because the linear expansion coefficient, thermal conductivity, and dielectric constant of the electrical insulating layer can be easily controlled.

  The thermosetting resin preferably contains at least one selected from an epoxy resin, a phenol resin, and a cyanate resin. This is to improve the heat resistance of the electrical insulating layer.

The inorganic filler preferably contains at least one selected from alumina, magnesia, silica, aluminum nitride, and silicon nitride. When alumina or aluminum nitride is used, the thermal conductivity can be made higher than that of a conventional glass / epoxy substrate, and the heat generated from the circuit components embedded in the electrical insulating layer can be easily dissipated. In particular, alumina has the advantage of low cost. When silica is used, the coefficient of linear expansion of the electrical insulating layer is close to that of a silicon semiconductor, and cracks due to temperature changes can be prevented. Therefore, it is preferable at the time of flip chip mounting in which a semiconductor is directly mounted. Further, when silica is used, an electric insulating layer having a low dielectric constant can be obtained and the specific gravity can be reduced. Therefore, it is preferably used for a high-frequency signal substrate such as a mobile phone. Even when silicon nitride is used, an electrical insulating layer having a low dielectric constant can be obtained.

  The circuit component preferably includes a bare IC chip and is flip-chip mounted on the wiring board. A compact and high-density component built-in module can be configured.

  The circuit component preferably includes at least one selected from a resistor, a capacitor, and an inductor.

  In the method for manufacturing a component built-in module according to the present invention, an electrical insulating layer for embedding a circuit component is formed by bonding a circuit component to at least one of a pair of wiring boards and covering the upper and lower surfaces with the wiring boards. An inner via is formed in the electrically insulating layer for electrically connecting the two wiring boards by curing at a lower temperature than the thermosetting resin and forming a thermosetting resin. An inner via misalignment prevention body that cures at a lower temperature than the inner via is formed on the electrical insulating layer so as to be opposite to the embedded circuit component, and both wiring boards are placed on the upper and lower sides of the electrical insulating layer. Each wiring board is electrically insulated by placing it at a temperature lower than the curing temperature of the thermosetting resin of the electrical insulation layer and higher than the curing temperature of the inner via and the inner via misalignment prevention body. Embedded circuit components electrically insulating layer is pressurized towards, characterized by heating at a temperature higher than the curing temperature of the thermosetting resin.

  According to this configuration, the inner via is formed in the electrically insulating layer for electrically connecting the two wiring boards by curing at a lower temperature than the thermosetting resin, and the inner via is cured at a lower temperature than the thermosetting resin. The misalignment prevention body is formed on the electric insulating layer so as to be located on the opposite side of the embedded circuit component with respect to the inner via, and the inner via is lower than the curing temperature of the thermosetting resin of the electric insulating layer. In addition, the circuit boards are embedded in the electrical insulation layer by pressing both wiring boards toward the electrical insulation layer while being heated at a temperature higher than the curing temperature of the inner via displacement prevention body. For this reason, when the circuit component is embedded in the electrical insulating layer, the flow of the thermosetting resin from the circuit component toward the inner via can be suppressed by the inner via position shift prevention body. As a result, it is possible to prevent displacement of the inner via due to the flow of the thermosetting resin. Further, since the inner via position misalignment prevention body is made of a conductive material, a shielding effect can be obtained and the influence of noise can be prevented.

  In another method of manufacturing a component built-in module according to the present invention, an electrical insulating layer for embedding a circuit component by bonding a circuit component to at least one of a pair of wiring boards and covering the upper and lower surfaces with each wiring board is provided with an inorganic filler. And an inner via position which is formed by a mixture containing an uncured thermosetting resin, cured by light and electrically connected to both wiring boards, and is cured by light. The prevention body is formed on the electrical insulating layer so as to be located on the opposite side of the embedded circuit component with respect to the inner via, and the inner via and the inner via position prevention body are irradiated with light and cured, and both wirings Place the board on the upper and lower sides of the electrical insulation layer, press both wiring boards toward the electrical insulation layer, embed circuit components in the electrical insulation layer, and a temperature higher than the curing temperature of the thermosetting resin Characterized by heating.

  According to this configuration, the inner via is formed in the electrically insulating layer for being cured by light and electrically connecting both the wiring boards, and the inner via misalignment prevention body that is cured by light is formed on the inner via. It is formed on the electrical insulation layer so that it is located on the opposite side of the embedded circuit component, and the inner via and the inner via misalignment prevention body are irradiated with light and cured, and both wiring boards are pressed toward the electrical insulation layer. Then embed the circuit components in the electrical insulation layer. For this reason, when the circuit component is embedded in the electrical insulating layer, the flow of the thermosetting resin from the circuit component toward the inner via can be suppressed by the inner via position shift prevention body. As a result, it is possible to prevent displacement of the inner via due to the flow of the thermosetting resin. Further, since the inner via position misalignment prevention body is made of a conductive material, a shielding effect can be obtained and the influence of noise can be prevented.

  ADVANTAGE OF THE INVENTION According to this invention, the component built-in module which improved the connection reliability and noise resistance of the inner via | veer, and its manufacturing method can be provided.

  FIG. 1 is a cross-sectional view of the component built-in module 100 according to the present embodiment, and FIG. 2 is a plan cross-sectional view along the cross-section AA of FIG. The component built-in module 100 includes an electrical insulating layer 4. The electrical insulating layer 4 is made of a mixture containing 70% to 95% by weight of an inorganic filler and 5% to 30% by weight of a thermosetting resin.

  Two-layer wiring boards 5 and 6 are provided to cover the upper and lower surfaces of the electrical insulating layer 4, respectively. A wiring pattern 7 is formed on both surfaces of both the wiring substrates 5 and 6, and a via land 12 is formed on the surface on the electric insulating layer 4 side.

  The semiconductor chip 3 embedded in the electrical insulating layer 4 is bonded to the wiring pattern 7 of the wiring substrate 5. The inner via 2 cured at a lower temperature than the thermosetting resin of the electrical insulating layer 4 is provided in the electrical insulating layer 4 by electrically connecting both the wiring boards 5 and 6 by the via land 12. A plurality of inner vias 2 are provided surrounding the semiconductor chip 3.

  A plurality of dummy vias 1 hardened at a lower temperature than the thermosetting resin of the electrical insulating layer 4 on the opposite side of the semiconductor chip 3 with respect to the inner via 2 so as to surround the inner via 2 around the outer peripheral portion of the electrical insulating layer 4. Are provided.

  By selecting the inorganic filler and the thermosetting resin, the linear expansion coefficient, thermal conductivity, dielectric constant, and the like of the electrical insulating layer 4 can be easily controlled.

  As the inorganic filler of the electrical insulating layer 4, for example, alumina, magnesia, boron nitride, aluminum nitride, silicon nitride, Teflon (registered trademark), silica, and the like can be used. When alumina, boron nitride, and aluminum nitride are used, a substrate having higher thermal conductivity than a conventional glass / epoxy substrate can be manufactured, and the heat generated by the semiconductor chip 3 can be effectively dissipated. In particular, when alumina is used, there is an advantage that the cost is low. When silica is used, the coefficient of linear expansion of the electrical insulating layer 4 approaches that of a silicon semiconductor, and cracks due to temperature changes can be prevented. Therefore, it is preferable when flip chip mounting is used to directly mount a semiconductor chip. Silica is preferable as a high-frequency substrate for a mobile phone or the like because an electrical insulating layer having a low dielectric constant is obtained and its specific gravity is light. Even when silicon nitride or Teflon (registered trademark) is used, an electrically insulating layer having a low dielectric constant can be obtained. Further, when boron nitride is used, the linear expansion coefficient can be reduced.

  When an epoxy resin, phenol resin, or cyanate resin having high heat resistance is used as the thermosetting resin of the electric insulating layer 4, the heat resistance of the electric insulating layer 4 is improved. In addition, if a fluororesin having a low dielectric loss tangent, a PTFE resin (tetrafluoroethylene resin), a PPO resin (polyphenylene oxide), a resin containing PPE resin (polyphenylene ether), or a resin obtained by modifying these resins is used, The high frequency characteristics of the insulating layer 4 are improved.

  The electrical insulating layer 4 may further include a dispersant, a colorant, a coupling agent, or a release agent. The filler in the thermosetting resin can be dispersed with good uniformity by the dispersant. Since the electrical insulating layer 4 can be colored by the colorant, the heat dissipation of the component built-in module is improved. Since the coupling agent can increase the adhesive strength between the thermosetting resin and the filler, the electrical insulation of the electrical insulation layer 4 is enhanced. The mold release agent improves the mold release property between the mold and the mixture, thereby improving productivity.

The wiring patterns 7 of both wiring boards 5 and 6 are made of a material having electrical conductivity, for example,
It can be comprised with the lead frame which processed metal foil, the conductive resin composition, and the metal plate. When a metal foil or a lead frame is used, a fine wiring pattern can be easily formed by etching or the like. When a metal foil is used, a wiring pattern can be formed by transfer using a release film. In particular, copper foil is preferable because of its low price and high electrical conductivity.

  Moreover, when the wiring pattern 7 is comprised with a conductive resin composition, a wiring pattern with low electrical resistance can be formed by using metal powder, such as gold | metal | money, silver, copper, and nickel, or carbon powder.

  Furthermore, by plating the surface of these wiring patterns 7, the corrosion resistance and electrical conductivity can be improved. Furthermore, the adhesiveness with the electrical insulating layer 4 can be improved by roughening the contact surface of the wiring pattern 7 with the electrical insulating layer 4.

  The semiconductor chip 3 is composed of semiconductor elements such as transistors, ICs, and LSIs, for example. The semiconductor element may be a semiconductor bare chip. Further, at least a part of the connection portion between the semiconductor chip 3 or the semiconductor chip 3 and the wiring pattern 7 may be sealed with a sealing resin. The wiring pattern 7 and the semiconductor chip 3 are connected by flip chip bonding using, for example, a conductive adhesive or an anisotropic conductive film (ACF). Further, bumps 15 may be formed and connected. Moreover, since the semiconductor chip 3 can be shielded from the outside air by the electrical insulating layer 4, it is possible to prevent a decrease in reliability due to humidity. Further, when a mixture of a filler and a thermal effect resin is used as the material of the electrical insulating layer 4, unlike the ceramic substrate, it is not necessary to fire at a high temperature, and the semiconductor chip 3 can be easily incorporated.

  The inner via 2 is a mixture of conductive powder having a function of connecting the wiring patterns 7 of both wiring boards 5 and 6 and a low-temperature thermosetting resin that cures at a lower temperature than the thermosetting resin of the electrical insulating layer 4. Constitute. For example, a metal powder such as gold, silver, copper or nickel, or a mixture of carbon powder and a low-temperature thermosetting resin can be used. As the low-temperature thermosetting resin that cures at a lower temperature than the thermosetting resin of the electrical insulating layer 4, for example, an epoxy resin, a phenol resin, or a cyanate resin can be used. Epoxy resins are particularly preferred because of their high heat resistance. As the metal powder, gold, silver, copper, or nickel is preferable because of its high conductivity, and copper is particularly preferable because of its high conductivity and low migration. Even when metal powder in which copper is coated with silver is used, it is possible to satisfy both characteristics of low migration and high conductivity.

  The dummy via 1 is preferably made of the same material as the inner via 2. As will be described later, the dummy via 1 prevents the position of the inner via 2 from being displaced due to the resin flow of the electrical insulating layer 4 that occurs when the semiconductor chip 3 is embedded in the electrical insulating layer 4 and heated and pressed. The shape and size of the dummy via 1 are appropriately selected according to various conditions such as the arrangement of the embedded semiconductor chip 3 and inner via 2.

  The dummy vias 1 are electrically connected to each other and are preferably grounded. This is because the noise from the inside and outside of the module can be blocked by the shielding effect of the displacement prevention body.

  The component built-in module 100 configured as described above is manufactured as follows. FIGS. 3A to 3C and FIGS. 4A and 4B are cross-sectional views illustrating a method of manufacturing the component built-in module 100 according to the present embodiment.

First, an uncured electrical insulating layer 10 is produced. An example of a method for producing the uncured electrical insulating layer 10 is as follows. The electrical insulating layer 10 is produced from an uncured thermosetting resin or a mixture of a filler and an uncured thermosetting resin. First, the electrical insulating layer 10 is formed into a sheet by mixing and stirring the filler and the uncured thermosetting resin. As a method for forming into a sheet shape, for example, a method of forming a layer of a mixture of a filler and a thermosetting resin on a film by a doctor blade method or the like can be used. The electrical insulating layer 10 can reduce adhesiveness by drying at a curing temperature or lower. By this heat treatment, the adhesiveness of the plate-like electrical insulating layer 10 is lost, so that peeling from the film becomes easy. By making it into an uncured state (B stage), handling of the electrical insulating layer 10 becomes easy.

  Next, as shown in FIG. 3A, the through hole 8 for forming the inner via and the through hole 9 for forming the dummy via are formed in the uncured electrical insulating layer 10. These through holes 8 and 9 can be formed by, for example, punching, drilling, or laser processing.

  Next, as shown in FIG. 3B, the via hole 8 is filled with via paste (conductive paste) to form the inner via 2. At the same time, via holes 9 are filled with via paste (conductive paste) to form dummy vias 1. For filling the through holes 8 and 9 with the via paste, printing or injection methods can be used.

  Next, as shown in FIG. 3C, the wiring boards 6 and 5 are respectively aligned and stacked on the upper and lower surfaces of the uncured electrical insulating layer 10. Then, as shown in FIG. 4A, heating is performed at a temperature lower than the curing temperature of the thermosetting resin of the electrical insulating layer 10 and higher than the curing temperature of the inner via 2 and the dummy via 1, so that the electrical insulating layer 10 is not yet formed. In a state where the inner via 2 and the dummy via 1 are cured while being cured, both the wiring boards 6 and 5 are pressed toward the electrical insulating layer 10 to embed the semiconductor chip 3 in the electrical insulating layer 10.

  When the semiconductor chip 3 is embedded in the electrical insulating layer 10, the dummy via 1 that is compressed by the via lands 12 of the upper and lower wiring boards 6 and 5 is pressed by the semiconductor chip 3 and the flow of the uncured thermosetting resin toward the inner via 2. Suppresses.

  In this way, the paste-like inner via 2 and dummy via 1 are cured by heating to the extent that the thermosetting resin of the electrical insulating layer 10 is not cured before pressing, so that the outer peripheral portion of the electrical insulating layer 10 is cured. The dummy via 1 disposed and cured serves as a wall, and suppresses the resin flow of the electrical insulating layer 10 that occurs when heating and pressurizing. For this reason, the inner via 2 is less likely to be displaced with respect to the via land 12, and high connection reliability of the inner via can be ensured.

  Next, by heating at a temperature higher than the curing temperature of the thermosetting resin of the electric insulating layer 10, as shown in FIG. 4B, the electric insulating layer 4 in which the thermosetting resin is cured can be formed. In this way, the component built-in module 100 can be completed.

  FIG. 5 is a cross-sectional view illustrating the method for manufacturing the component built-in module according to the first modification, and corresponds to FIG. 3C described above. As shown in FIG. 5, a cavity 11 for embedding the semiconductor chip 3 may be formed in the uncured electrical insulating layer 10A. The cavity 11 can suppress the flow of resin corresponding to the volume of the semiconductor chip 3 when it is embedded in the electrical insulating layer 10A.

  FIG. 6A is a plan view of the component built-in module according to the second modification, and FIG. 6B is a plan view of the component built-in module according to the third modification. When a large number of component built-in modules 100 are simultaneously created in the multi-cavity module 200, the dummy vias 1 may be provided along the respective outer peripheral portions of the component built-in modules 100 as shown in FIG. Further, as shown in FIG. 6B, the dummy via 1 may be provided along the outer peripheral portion of the multi-chamfer module 200.

  In the present embodiment, an example in which the dummy via 1 is provided is shown. However, the present invention is not limited to this, and an inner via misalignment prevention body that cures at a lower temperature than the thermosetting resin of the electrical insulating layer is provided. Good.

  Moreover, although the example in which the inner via 2 and the dummy via 1 have a low-temperature thermosetting resin that cures at a lower temperature than the thermosetting resin of the electrical insulating layer is shown, the present invention is not limited to this, and the inner via 2 and the dummy via 1 may have a photocurable resin. In this case, the inner via 2 and the dummy via 1 are irradiated with light and cured, and then both the wiring boards 6 and 5 are pressed toward the uncured electrical insulating layer 10 to make the semiconductor chip 3 into the electrical insulating layer 10. If embedded, the same effect as described above can be obtained.

  Furthermore, although the example in which the semiconductor chip 3 is built in the electrical insulating layer 4 is shown, at least one selected from a resistor, a capacitor, and an inductor may be built in. Moreover, you may incorporate both.

  The present invention can be applied to a component built-in module in which an active component such as a semiconductor and a passive component such as a capacitor are built in an electrical insulating layer and a method for manufacturing the module.

It is sectional drawing of the component built-in module which concerns on this Embodiment. FIG. 2 is a plan sectional view taken along a section AA in FIG. 1. (A)-(c) is sectional drawing which shows the manufacturing method of the component built-in module which concerns on this Embodiment. (A)-(b) is sectional drawing which shows the manufacturing method of the component built-in module which concerns on this Embodiment. It is sectional drawing which shows the manufacturing method of the component built-in module which concerns on a 1st modification. (A) is a top view of the component built-in module which concerns on a 2nd modification, (b) is a top view of the component built-in module which concerns on a 3rd modification. It is sectional drawing which shows the structure of the conventional component built-in module. (A)-(c) is sectional drawing which shows the manufacturing method of the conventional component built-in module. It is sectional drawing which shows the manufacturing method of the conventional component built-in module.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Dummy via 2 Inner via 3 Circuit component 4 Electrical insulation layer 5 and 6 Wiring board 7 Wiring pattern 8 and 9 Through-hole 10 Electrical insulation layer 11 Cavity 100 Component built-in module 200 Multi-cavity module

Claims (15)

An electric insulating layer made of a mixture containing an inorganic filler and a thermosetting resin, and a pair of wiring boards covering the upper and lower surfaces of the electric insulating layer, and a circuit embedded in the electric insulating layer in at least one of the pair of wiring boards Inner vias, which are bonded to each other and cured at a lower temperature than the thermosetting resin of the electrical insulation layer, are provided in the electrical insulation layer by electrically connecting the two wiring boards. A component built-in module characterized in that an inner via misalignment prevention body hardened at a lower temperature than the thermosetting resin of the electrical insulating layer is provided. An electric insulating layer made of a mixture containing an inorganic filler and a thermosetting resin, and a pair of wiring boards covering the upper and lower surfaces of the electric insulating layer, and a circuit embedded in the electric insulating layer in at least one of the pair of wiring boards Inner vias where parts are joined and hardened by light are provided in the electrical insulation layer by electrically connecting both wiring boards, and the inner vias that are hardened by light on the opposite side of the circuit parts are prevented from shifting to the inner vias. A component built-in module characterized by providing a body. 3. The component built-in module according to claim 1, wherein a plurality of inner vias are disposed so as to surround the circuit component, and a plurality of inner via misalignment prevention bodies are disposed on an outer peripheral portion of the electrical insulating layer. 4. The component built-in module according to claim 3, wherein the plurality of inner via position misalignment prevention bodies are arranged so as to surround the plurality of inner vias. The component built-in module according to claim 1, wherein the inner via position misalignment prevention body is formed of a dummy via. 6. The component built-in module according to claim 1, wherein the inner via misalignment prevention bodies are electrically connected to each other. 7. The component built-in module according to claim 1, wherein the inner via position misalignment prevention body is grounded. The inner via and the dummy via include a metal powder containing at least one selected from silver, copper, gold, and nickel, and a low-temperature thermosetting resin that cures at a lower temperature than the photo-curing resin or the thermosetting resin of the electrical insulating layer. The module with a built-in component according to any one of claims 5 to 7. The component built-in module according to any one of claims 1 to 8, wherein the electrical insulating layer includes 70 wt% or more and 95 wt% or less of an inorganic filler and 5 wt% or more and 30 wt% or less of a thermosetting resin. The component built-in module according to claim 1, wherein the thermosetting resin includes at least one selected from an epoxy resin, a phenol resin, and a cyanate resin. The component built-in module according to claim 1, wherein the inorganic filler includes at least one selected from alumina, magnesia, silica, aluminum nitride, and silicon nitride. 12. The component built-in module according to claim 1, wherein the circuit component includes a bare IC chip and is flip-chip mounted on the wiring board. The component built-in module according to claim 1, wherein the circuit component includes at least one selected from a resistor, a capacitor, and an inductor. A circuit component is bonded to at least one of a pair of wiring boards, and an electrical insulating layer for embedding the circuit parts by covering the upper and lower surfaces with each wiring board is formed of a mixture containing an inorganic filler and an uncured thermosetting resin. The inner via misalignment prevention body that cures at a lower temperature than the thermosetting resin and forms an inner via in the electrically insulating layer for electrically connecting both wiring boards, and cures at a lower temperature than the thermosetting resin. Is formed on the electrical insulation layer so as to be located on the opposite side of the embedded circuit component with respect to the inner via, and both wiring boards are arranged on the upper and lower sides of the electrical insulation layer, respectively, and the thermosetting resin of the electrical insulation layer The circuit board is embedded in the electrical insulation layer by pressing both wiring boards toward the electrical insulation layer while being heated at a temperature lower than the cure temperature of the inner via and the cure temperature of the inner via misalignment prevention body. See, method for producing a component built-in module, characterized by heating at a temperature higher than the curing temperature of the thermosetting resin. A circuit component is bonded to at least one of a pair of wiring boards, and an electrical insulating layer for embedding the circuit parts by covering the upper and lower surfaces with each wiring board is formed of a mixture containing an inorganic filler and an uncured thermosetting resin. A circuit in which an inner via for curing by light and electrically connecting both wiring boards is formed in the electrically insulating layer, and an inner via misalignment prevention body that is cured by light is embedded in the inner via. It is formed on the electrical insulation layer so as to be located on the opposite side of the component, and the inner via and the inner via misalignment prevention body are irradiated with light and cured, and both wiring boards are arranged on the upper and lower sides of the electrical insulation layer, respectively. The circuit board is embedded in the electrical insulation layer by pressing the wiring board toward the electrical insulation layer, and heated at a temperature higher than the curing temperature of the thermosetting resin. Method.

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