JP2006286853A - Silicon interposer and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor package having excellent high-speed signal-transmission characteristics in a semiconductor package with a plurality of loaded semiconductor elements. <P>SOLUTION: An interposer uses a silicon single-crystal wafer 101 as a component. In the interposer, a first insulating resin layer 102 having a dielectric constant from 2.4 to 3.2 and a silicon interposer 107 with conductor circuits 105 for connecting the semiconductor elements loaded on the interposer and external connecting terminals are formed on the wafer. The insulating resin layer has low residual strain. In a semiconductor device, the semiconductor elements are loaded on the silicon interposer 107, the conductor circuits 105 on the silicon interposer 107 and the semiconductor elements are connected electrically, and the semiconductor elements and the external connecting terminals are connected through the conductor circuits 105. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a silicon interposer and a semiconductor device.

  With recent demands for higher functionality and lighter, thinner and smaller electronic devices, electronic components have been increasingly integrated and densely packaged. Semiconductor packages used in these electronic devices have been reduced in size and increased in pin count, and mounting substrates on which electronic components including the semiconductor package are mounted have also been reduced in size. Furthermore, in order to improve the storage property in an electronic device, a rigid flex board that can be bent by laminating and integrating a rigid board and a flexible board has been used as a mounting board.

  With the miniaturization of semiconductor packages, the conventional package using a lead frame has a limit on miniaturization. Therefore, recently, it is assumed that a chip is mounted on a circuit board, and BGA (Ball Grid) is used. Array) and a new area mounting type package system such as CSP (Chip Scale Package) have been proposed. In these semiconductor packages, the electrical connection between the electrodes of the semiconductor chip and the terminals of the substrate, which is made of various materials such as plastics and ceramics, called the semiconductor package substrate, has the function of the lead frame of the conventional semiconductor package. BGA and CSP structures using wire bonding, TAB (Tape Automated Bonding), and recently flip chip (FC) connection, which is advantageous for miniaturization of semiconductor packages and shortening of wiring paths It has been actively proposed. In addition, many structures (see, for example, Patent Document 1 and Patent Document 2) have been proposed in which a plurality of semiconductor elements are mounted in one semiconductor package to make the semiconductor package smaller and more functional.

  However, the demand for higher functionality of electronic devices has been increasing the speed of signals processed by semiconductor elements in the semiconductor package, and signal degradation inside the semiconductor package has become a major problem.

US Pat. No. 5,291,061 JP-A-5-13665

  The present invention has been made in order to solve the above-described conventional problems. The object of the present invention is to enable high-speed signal transmission inside a semiconductor package in which a plurality of semiconductor elements are mounted, and to prevent signal degradation. The object is to provide a small number of semiconductor devices.

  As a result of various studies, the inventors have arranged a low dielectric constant resin as an insulating layer on a silicon single crystal wafer and mounted a plurality of semiconductor elements on an interposer in which a conductor circuit is formed. The present inventors have found that high-speed signal transmission between semiconductor elements is made possible by connecting a plurality of semiconductor elements via a semiconductor device.

That is, the present invention
(1) An interposer including a silicon single crystal wafer as a constituent element, and mounted on the interposer with a first insulating resin layer having a dielectric constant of 2.4 or more and 3.2 or less on the wafer. A silicon interposer comprising a conductor circuit for connecting a semiconductor element and an external connection terminal,
(2) The silicon interposer according to item (1), which has a second insulating resin layer having a dielectric constant of 2.4 or more and 3.2 or less on the conductor circuit.
(3) The second insulating resin layer has an opening for connecting a semiconductor element mounted on the silicon interposer and an external connection terminal. Silicon interposer,
(4) At least one of the first insulating resin layer and the second insulating resin layer has a value of residual stress represented by the following formula (1) of 60 MPa or less and 10 MPa or more. Silicon interposer according to 3,

［但し、σは残留応力、Ｅ_resin（Ｔ）は温度Ｔ℃における樹脂の弾性率、α_resin（Ｔ）は温度Ｔ℃における樹脂の線膨張係数、α_si（Ｔ）は温度Ｔ℃における半導体素子の線膨張係数、Ｔｇは絶縁樹脂のガラス転移温度、Ｔ１は温度サイクル試験の冷却温度を示す。］

[Where σ is the residual stress, E _resin (T) is the elastic modulus of the resin at temperature T ° C., α _resin (T) is the linear expansion coefficient of the resin at temperature T ° C., and α _si (T) is the semiconductor at temperature T ° C. The linear expansion coefficient of the element, Tg represents the glass transition temperature of the insulating resin, and T1 represents the cooling temperature of the temperature cycle test. ]

(5) The silicon according to any one of (2) to (5), wherein the first insulating resin layer and the second insulating resin layer have a glass transition temperature of 240 ° C. or higher. Interposer,
(6) Item (2), wherein the first insulating resin layer and the second insulating resin layer have an elastic modulus of 0.005 GPa to 1 GPa in a temperature range of −65 ° C. to 150 ° C. Thru | or the silicon interposer in any one of (5) term,
(7) A semiconductor element is mounted on the silicon interposer described in the items (1) to (6), and the conductor circuit on the silicon interposer and the semiconductor element are electrically connected, And the semiconductor device and the external connection terminal are connected via the conductor circuit,
Is to provide.

  According to the present invention, it is possible to provide a semiconductor device capable of high-speed signal transmission inside a semiconductor package on which a plurality of semiconductor elements are mounted and with little signal deterioration.

The silicon interposer of the present invention is an interposer having a silicon single crystal wafer as a constituent element, the first insulating resin layer having a dielectric constant of 2.4 or more and 3.2 or less on the wafer, It is characterized by having a conductor circuit for connecting the semiconductor element mounted on the interposer and the external connection terminal, and the resulting semiconductor device has excellent high-speed signal transmission characteristics and little signal deterioration It becomes.
The silicon interposer of the present invention has a structure having a second insulating resin layer having a dielectric constant of 2.4 or more and 3.2 or less on the conductor circuit, and further, the second insulation The resin layer may have an opening for connecting a semiconductor element mounted on the silicon interposer and an external connection terminal.
As a dielectric constant in this invention, it can measure by the measuring method based on ASTMD3380-75, and the value in 1 GHz can be mentioned as a frequency in a measurement.
Further, in the semiconductor device of the present invention, a semiconductor element is mounted on the silicon interposer, a conductor circuit on the silicon interposer and the semiconductor element are electrically connected, and the conductor circuit is connected via the conductor circuit. The semiconductor element and an external connection terminal are connected.

  The semiconductor device of the present invention is mounted on a printed wiring board and incorporated in an electronic device. Depending on the use environment of the electronic device, for example, when a temperature difference occurs, a large stress is generated inside the insulating resin layer of the semiconductor device. For this reason, the insulating resin layer has cracks and the like, and further may cause destruction of the conductor circuit, so that it needs to have sufficient resistance to stress.

  In the present invention, the insulating resin layer particularly has a value of the residual stress represented by the formula (1) having a value of 10 MPa or more and 60 MPa or less. This is preferable because it can suppress the destruction of the insulating resin layer and the conductor circuit due to the above. As for the value of the residual stress, either one of the first insulating resin layer and the second insulating resin layer is preferably within the above range, and more preferably both are within the above range.

Further, in the manufacturing process of the semiconductor device, when the semiconductor device is incorporated into an electronic device, it is repeatedly put into a heating process such as solder reflow. In order to suppress the stress generated at this time, the insulating resin layer In particular, by having a glass transition temperature of 240 ° C. or higher, it is possible to suppress mismatches with the silicon wafer due to thermal expansion of the insulating resin layer during thermal history when incorporated in electronic equipment. Therefore, it is preferable.
As the glass transition temperature in the present invention, a value measured by the TMA method can be used, and it can be calculated from the degree of change in the thermal expansion coefficient of the material obtained from this measured value.

In addition, when the silicon interposer is thinned in the miniaturization of a semiconductor device or the like, warping caused by the difference in thermal expansion coefficient between the insulating resin layer and silicon may be a big problem. The occurrence of warpage can be suppressed by lowering the elastic modulus of the insulating resin layer. Specifically, the elastic modulus of the insulating resin layer is 0.005 GPa or more and 1 GPa in a temperature range of −65 ° C. or more and 270 ° C. or less. The following is desirable.
The elastic modulus in the present invention can be measured by the DMA method.

  As for forming such an insulating resin layer, an insulating resin such as polyimide, polybezooxazole, cyclic olefin-based resin, benzocyclobutene resin, and modified products thereof can be used. Among the insulating resins, In order to obtain high-speed signal transmission characteristics, a cyclic olefin resin having a low dielectric constant is preferable. The insulating resin layer may be composed of a resin composition containing the insulating resin.

  Examples of the cyclic olefin-based resin used in the present invention include monocyclic compounds such as cyclohexene and cyclooctene, norbornene, norbornadiene, dicyclopentadiene, dihydrodicyclopentadiene, tetracyclododecene, tricyclopentadiene, dihydrotricyclopentadiene, Examples thereof include polymers of cyclic olefin monomers such as polycyclic compounds such as tetracyclopentadiene and dihydrotetracyclopentadiene, and substituted products in which a functional group is bonded to these monomers.

  Such polymers of cyclic olefin monomers include, for example, (co) polymers of cyclic olefin monomers, copolymers of cyclic olefin monomers and other monomers capable of copolymerization such as α-olefins, and the like. Examples thereof include hydrogenated products of these copolymers. Examples of these known polymers include random copolymers, block copolymers, and alternating copolymers. These cyclic olefin-based resins can be produced by a known polymerization method, and examples of the polymerization method include an addition polymerization method and a ring-opening polymerization method. Among the cyclic olefin-based resins, generally, norbornene-based resins have low hygroscopicity because their main chain skeleton has an alicyclic structure.

  Examples of addition polymers of cyclic olefin resins include (1) addition (co) polymers of norbornene monomers obtained by addition (co) polymerization of norbornene monomers, (2) norbornene monomers and ethylene or α -Addition copolymers with olefins, (3) addition copolymers with norbornene monomers and nonconjugated dienes, and other monomers as required. These resins can be obtained by all known polymerization methods. Among these, polymers obtained by polymerizing norbornene-based monomers (particularly addition (co) polymerization) are preferred, but the present invention is not limited thereto.

Such an addition polymer of a cyclic olefin resin is obtained by coordination polymerization or radical polymerization using a metal catalyst. Among them, in coordination polymerization, a polymer is obtained by polymerizing monomers in a solution in the presence of a transition metal catalyst (NiCOLE R. GROVE et al. Journal of Polymer Science: part B, Polymer Physics, Vol. 1). 37, 3003-3010 (1999)).
Representative nickel and platinum catalysts as metal catalysts for coordination polymerization are described in PCT WO 9733198 and PCT WO 00/20472. Examples of metal catalysts for coordination polymerization include (toluene) bis (perfluorophenyl) nickel, (mesylene) bis (perfluorophenyl) nickel, (benzene) bis (perfluorophenyl) nickel, bis (tetrahydro) bis ( Known metal catalysts such as perfluorophenyl) nickel, bis (ethyl acetate) bis (perfluorophenyl) nickel, and bis (dioxane) bis (perfluorophenyl) nickel may be mentioned.

The radical polymerization technique is described in Encyclopedia of Polymer Science, John Wiley & Sons, 13, 708 (1998).
Generally, in radical polymerization, the temperature is raised to 50 ° C. to 150 ° C. in the presence of a radical initiator, and the monomer is reacted in a solution. Examples of the radical initiator include azobisisobutyronitrile (AIBN), benzoyl peroxide, lauryl peroxide, azobisisocapronitrile, azobisisoleronitrile, t-butyl hydrogen peroxide, and the like.

  Examples of the ring-opening polymer of the cyclic olefin resin include, for example, (4) a ring-opening (co) polymer of a norbornene-based monomer, and a resin obtained by hydrogenating the (co) polymer if necessary, (5) norbornene A ring-opening copolymer of an ethylene monomer and ethylene or α-olefins, and a resin obtained by hydrogenating the (co) polymer if necessary, (6) a norbornene monomer and a non-conjugated diene, or another monomer And a resin obtained by hydrogenating the (co) polymer if necessary. These resins can be obtained by all known polymerization methods.

  Such a ring-opening polymer of a cyclic olefin resin is formed by ring-opening (co) polymerizing at least one or more norbornene monomers using a known ring-opening polymerization method using titanium or a tungsten compound as a catalyst. A co-polymer is produced, and then, if necessary, a carbon-carbon double bond in the ring-opened (co) polymer is hydrogenated by a conventional hydrogenation method to obtain a thermoplastic saturated norbornene resin. It is obtained by manufacturing.

  Examples of the polymerization solvent used for the addition polymerization and ring-opening polymerization include hydrocarbons and aromatic solvents. Examples of the hydrocarbon solvent include pentane, hexane, heptane, and cyclohexane, but are not limited thereto. Examples of the aromatic solvent include, but are not limited to, benzene, toluene, xylene and mesitylene. Diethyl ether, tetrahydrofuran, ethyl acetate, esters, lactones, ketones and amides can also be used. These solvents can be used alone or as a polymerization solvent.

  The molecular weight of the cyclic olefin resin in the present invention can be controlled by changing the ratio of the initiator and the monomer or changing the polymerization time. When the above coordination polymerization is used, US Pat. As disclosed in US Pat. No. 6,136,499, the molecular weight can be controlled through the use of a chain transfer catalyst. In the present invention, α-olefins such as ethylene, propylene, 1-hexane, 1-decene and 4-methyl-1-pentene are suitable for controlling the molecular weight.

As the cyclic olefin resin, one having a polymerizable functional group in the side chain can be used. Further, the polymerizable functional group may be an organic group containing these functional groups, and examples thereof include a group composed of the functional group and a group such as an alkyl group, an ether group, and an ester group. . Thereby, when a resin layer is formed, characteristics, such as adhesiveness with a base material and heat resistance, can be improved.
Examples of the functional group include a hydroxyl group, a carboxyl group, an ester group, an acryloyl group, a methacryloyl group, a silyl group, and an epoxy group (glycidyl ether group). The cyclic olefin-based resin having a polymerizable functional group in the side chain is a polymer of a cyclic olefin monomer having a polymerizable functional group in the side chain described below, or other cyclic olefin monomer. A copolymer may also be used.

  Specific examples of the cyclic olefin monomer having a polymerizable functional group in the side chain include 5-norbornene-2-methanol, acetic acid 5-norbornene-2-methyl ester, propionic acid 5-norbornene-2-methyl ester, Butyric acid 5-norbornene-2-methyl ester, valeric acid 5-norbornene-2-methyl ester, caproic acid 5-norbornene-2-methyl ester, caprylic acid 5-norbornene-2-methyl ester, capric acid 5-norbornene-2 -Methyl ester, lauric acid 5-norbornene-2-methyl ester, stearic acid 5-norbornene-2-methyl ester, oleic acid 5-norbornene-2-methyl ester, linolenic acid 5-norbornene-2-methyl ester, 5- Norbornene-2-carboxylic acid, 5-no Boronene-2-carboxylic acid methyl ester, 5-norbornene-2-carboxylic acid ethyl ester, 5-norbornene-2-carboxylic acid t-butyl ester, 5-norbornene-2-carboxylic acid i-butyl ester, 5-norbornene- 2-carboxylic acid trimethylsilyl ester, 5-norbornene-2-carboxylic acid triethylsilyl ester, 5-norbornene-2-carboxylic acid isobornyl ester, 5-norbornene-2-carboxylic acid 2-hydroxyethyl ester, 5-norbornene-2 -Methyl-2-carboxylic acid methyl ester, cinnamic acid 5-norbornene-2-methyl ester, 5-norbornene-2-methylethyl carbonate, 5-norbornene-2-methyl n-butyl carbonate, 5- Norbornene-2-methyl t-butyl Carbonate, 5-methoxy-2-norbornene, (meth) acrylic acid 5-norbornene-2-methyl ester, (meth) acrylic acid 5-norbornene-2-ethyl ester, (meth) acrylic acid 5-norbornene-2 -N-butyl ester, (meth) acrylic acid 5-norbornene-2-n-propyl ester, (meth) acrylic acid 5-norbornene-2-i-butyl ester, (meth) acrylic acid 5-norbornene-2-i -Propyl ester, (meth) acrylic acid 5-norbornene-2-hexyl ester, (meth) acrylic acid 5-norbornene-2-octyl ester, (meth) acrylic acid 5-norbornene-2-decyl ester, 5-trimethoxy Silyl-2-norbornene, 5-triethoxysilyl-2-norbornene, 5- (2 -Trimethoxysilylethyl) -2-norbornene, 5- (2-triethoxysilylethyl) -2-norbornene, 5- (3-trimethoxypropyl) -2-norbornene, 5- (4-trimethoxybutyl)- Examples include 2-norbornene, 5-trimethylsilylmethyl ether-2-norbornene, and 5-methylglycidyl ether-2-norbornene. Most preferred are addition polymers obtained by polymerizing these cyclic olefin monomers, and addition copolymers of these cyclic olefin monomers with other cyclic olefin monomers. Thereby, it can be more excellent in heat resistance.

  The substitution amount of the polymerizable functional group is not particularly limited, but is preferably 3 to 70 mol%, particularly preferably 5 to 40 mol%, based on the entire cyclic olefin resin. When the substitution amount is within the above range, the dielectric constant is particularly excellent. In addition, the cyclic olefin-based resin having a functional group polymerizable in such a side chain is, for example, 1) by introducing a compound having a functional group capable of initiating polymerization into the cyclic olefin-based resin by a modification reaction. By polymerizing a monomer having a functional group capable of initiating polymerization, 3) by copolymerizing a monomer having a functional group capable of initiating polymerization with other components as a copolymer component, or 4) It can be obtained by copolymerizing a monomer having a polymerizable functional group such as an ester group as a copolymerization component and then hydrolyzing the ester group.

  Further, unsaturated monomers copolymerizable with cyclic olefin monomers include ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3-methyl-1-pentene, 3- Ethyl-1-pentene, 4-methyl-1-pentene, 4-methyl-1-hexene, 4,4-dimethyl-1-hexene, 4,4-dimethyl-1-pentene, 4-ethyl-1-hexene, Ethylene or α-olefin having 2 to 20 carbon atoms such as 3-ethyl-1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-hexadecene, 1-octadecene and 1-eicocene; Non-conjugated dienes such as 1,4-hexadiene, 4-methyl-1,4-hexadiene, 5-methyl-1,4-hexadiene and 1,7-octadiene And the like.

Next, the addition (co) polymer of norbornene resin will be described.
Specifically, the norbornene-based resin having a polymerizable functional group in the side chain preferably has a repeating unit represented by the following formula (1).

X in the formula (1) independently represents —CH ₂ —, —CH ₂ CH ₂ — or —O—. R _{1 to} R ₄ are each independently one selected from hydrogen or a hydroxyl group, carboxyl group, ester group, acryloyl group, methacryloyl group, silyl group, epoxy group, and an organic group containing these functional groups. The above groups are shown, and at least one of them represents a functional group or an organic group containing the functional group. n represents an integer of 0 to 5, and the repetition may be different. Examples of the organic group containing the functional group include groups composed of the functional group and groups such as an alkyl group, an ether group, and an ester group.

  The norbornene-based resin having a polymerizable functional group in the side chain further includes a norbornene-type monomer having a polymerizable functional group in the side chain and a monomer represented by the following formula (2): An addition copolymer is preferred. Thereby, it is possible to obtain a resin layer that is particularly excellent in the balance between adhesion and electrical characteristics.

X in formula (2) independently represents —CH ₂ —, —CH ₂ CH ₂ — or —O—. R _{1 to} R ₄ are each independently a hydrogen atom, a linear or branched alkyl group having 1 to 12 carbon atoms, an alkenyl group, an alkynyl group, a vinyl group, an allyl group, an aralkyl group, a cyclic aliphatic group, or an aryl group. 1 or more substituents selected from a group are shown. n represents an integer of 0 to 5, and the repetition may be different.

  Specific examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group and dodecyl group. Specific examples of the group include vinyl group, allyl group, butynyl group and cyclohexenyl group. Specific examples of the alkynyl group include ethynyl group, 1-propynyl group, 2-propynyl group, 1-butynyl group and the like. 2-butynyl group and the like, specific examples of the cycloaliphatic group include cyclohexyl group, cyclopentyl group and methylcyclohexyl group, and specific examples of the aryl group include phenyl group, naphthyl group and anthracenyl group. Specific examples of the aralkyl group include a benzyl group and a phenethyl group. But are lower, the present invention is in no way limited thereto.

The weight average molecular weight of the cyclic olefin resin is not particularly limited, but is preferably 1,000 to 1,000,000, particularly preferably 5,000 to 500,000, and most preferably 10,000 to 250,000. When the weight average molecular weight (Mw) is within the above range, the properties such as heat resistance and smoothness of the surface of the molded article are excellent in balance.
The weight average molecular weight can be evaluated, for example, in terms of polystyrene measured by gel permeation chromatography (GPC) using cyclohexane or toluene as an organic solvent.

The molecular weight distribution of the cyclic olefin-based resin [the ratio of the weight average molecular weight: Mw to the number average molecular weight: Mn (Mw / Mn)] is not particularly limited, but is preferably 5 or less, particularly preferably 4 or less, particularly 1 ~ 3 is preferred. When the molecular weight distribution is within the above range, the electrical characteristics are particularly excellent.
As a method for measuring the molecular weight distribution, for example, it can be measured by GPC using cyclohexane or toluene as an organic solvent.
In addition, in the case of a cyclic olefin resin in which the weight average molecular weight and molecular weight distribution cannot be measured by the above method, those having a melt viscosity and a degree of polymerization that can form a resin layer are used by a normal melt processing method. be able to. Although the glass transition temperature of the said cyclic olefin resin can be suitably selected according to a use purpose, it is 50 degreeC or more normally, Preferably it is 70 degreeC or more, More preferably, it is 100 degreeC or more, More preferably, it is 125 degreeC or more.

In the norbornene-based resin having the structure represented by the general formula (1), the substituents R ₁ , R ₂ , R ₃ , and R ₄ have the type of the substituent and the substituent depending on the purpose. By adjusting the proportion of the repeating unit, the characteristics can be made preferable, and particularly when the above addition copolymer is used, a preferable one can be obtained. For example, when using General Formula (1), X is —CH ₂ —, R _{1 to} R ₃ are hydrogen, and n is 0, R ₄ is, for example, an n-butyl group or a decyl group. It is preferable to have a repeating unit into which the alkyl group is introduced, because a norbornene resin film having excellent flexibility can be obtained. Moreover, as these substituents, a repeating unit having a polymerizable functional group introduced, such as epoxy groups such as glycidyl group, glycidyl ether group and glycidyl methyl ether group, and silyl groups such as trimethoxysilyl group and triethoxysilyl group It is preferable because it has improved adhesion to a metal such as copper. The proportion in the case of the repeating unit of norbornene having an epoxy group is preferably 5 to 95 mol%, more preferably 20 to 80 mol%, still more preferably 30 to 70 mol%, and the triethoxysilyl group and / or Or as a ratio in the case of the repeating unit of norbornene which has a trimethoxysilyl group, 5-80 mol% is preferable, More preferably, it is 5-50 mol%.

  In the resin composition constituting the insulating resin layer, as a component other than the insulating resin, a filler can be added as necessary, and a light and / or thermosetting agent, an initiator, an ultraviolet absorber, Additives such as light stabilizers and antioxidants can be added.

Next, an example of a method for manufacturing the silicon interposer of the present invention will be described with reference to the drawings.
First, the first insulating resin layer 102 is formed on the silicon single crystal wafer 101 (FIGS. 1A to 1B).
As a method for forming the insulating resin layer, the insulating resin composition can be used to form the insulating resin layer by an existing method such as a spin coating method, a curtain coating method, a screen printing method, or a laminating method.
The thickness of the insulating resin layer can be selected according to the physical properties of each resin, but is preferably 2 μm or more in order to ensure electrical insulation, and 100 μm in order to suppress the total thickness of the semiconductor package. The following is desirable.
In addition, as a physical property of the resin, it is necessary to select an insulating layer having a low dielectric constant in order to suppress signal deterioration during high-speed signal transmission.
Specifically, the dielectric constant is 3.2 or less, and the lower the value, the better the effect of suppressing signal degradation. However, the insulating layer tends to be brittle, and the compatibility with the formation process of the insulating layer and the subsequent steps In view of the handling property, it is preferably 2.4 or more.

Next, the conductor circuit 105 is formed on the first insulating resin layer 102 formed as described above (FIGS. 1C to 1G).
As a method for forming the conductor circuit, any method that conforms to the design rule may be used. Specific examples include an additive method, a subtractive method, and an ink jet method. In the drawing, a sputtered film 103 is formed on the insulating resin layer 102 by sputtering (FIG. 1C), and a plating resist 104 on which a conductor circuit is patterned is applied (FIG. 1D), and a pattern opening is formed. Is plated to form a conductor circuit 105 pattern (FIG. 1E), and then the plating resist 104 is removed (FIG. 1F), and then the sputtered film 103 is removed to form the conductor circuit 105. An example of forming (FIG. 1G) is shown. Here, if necessary, the conductor circuit layer can be multilayered by repeating the step of forming the insulating resin layer and the step of forming the conductor circuit (not shown).
As a material of the conductor circuit, it is preferable to select a material having a low electrical resistance such as aluminum, gold, and copper, and it is more preferable to use copper in consideration of electrical resistance and handling properties.

Next, the second insulating resin layer 106 is formed on the conductor circuit 105 and the first insulating resin layer 102 formed as described above.
Here, the insulating resin composition for forming the second insulating resin layer can be formed in the same manner as described above using the same insulating resin composition as that for the first insulating resin layer.

Next, in the second insulating resin layer 106 formed as described above, a predetermined portion on the conductor circuit is opened, and an external connection terminal for connecting to the mounting semiconductor element is provided, so that the silicon interface of the present invention is provided. The positioner 107 is formed (FIG. 1 (h)).
As a result, the semiconductor element mounted on the silicon interposer of the present invention, the conductor circuit 105, and the conductor circuit 105 and the outside of the semiconductor device can be electrically connected.
Examples of the method for opening the second insulating resin layer include existing methods such as a photolithography method and a laser drilling method.
The thickness of the second insulating resin layer can be selected according to the physical properties of each resin, but is preferably 2 μm or more in order to ensure electrical insulation, and to suppress the total thickness of the semiconductor package. Is preferably 100 μm or less.

Next, an example of the semiconductor device of the present invention will be described with reference to the drawings.
The semiconductor device of the present invention is obtained by mounting and electrically joining the conductor circuit 105 of the silicon interposer 107 obtained above and a plurality of semiconductor elements.
As a method for mounting and connecting a semiconductor element, a flip chip method, a wire bond method, and the like can be cited. In order to minimize the wiring path, it is desirable to connect by a flip chip method. When using the wire bond method, it is necessary to shorten the wire length as much as possible to shorten the wiring path.
An example in the case of using the flip chip method will be described. In this case, the semiconductor element is a semiconductor element 108 with a solder ball, and the solder ball of the semiconductor element and the external terminal of the silicon interposer are aligned and mounted. (FIG. 2 (i)). At this time, in order to protect the junction between the semiconductor element and the silicon interposer, an underfill resin 109 is filled between the semiconductor element and the silicon interposer (FIG. 2 (j)). Furthermore, a semiconductor ball 111 of the present invention can be obtained by mounting solder balls 110 for external connection (FIG. 2 (k)).
As a method of filling the underfill resin, a filling method using a capillary, a resin is supplied onto the semiconductor element or the interposer before mounting the semiconductor element, and the resin is filled into the gap between the semiconductor element and the interposer simultaneously with the mounting of the semiconductor element. A pre-feeding scheme can be used.
On the other hand, when the wire bonding method is used in mounting / connecting semiconductor elements, it is necessary to protect at least the wire part and the semiconductor element part with a resin or the like. For this purpose, existing sealing resins and sealing methods are used. Can be used.

  Hereinafter, an example of an embodiment of the present invention will be described in detail. In addition, this invention is not limited by this.

First, the resin used for the insulating resin layer is synthesized by the following method.
All glass equipment used for synthesis was dried at 60 ° C. under 0.1 torr for 18 hours. Then, the glass equipment was moved to the glow box and installed in the glow box. First, ethyl acetate (917 g), cyclohexane (917 g), decyl norbornene (192 g, 0.82 mol) and glycidyl methyl ether norbornene (62 g, 0.35 mol) were added to the reaction flask. The reaction flask was then removed from the glow box and dry nitrogen gas was introduced. The reaction intermediate was degassed by passing nitrogen gas through the solution for 30 minutes. In a glow box, a nickel catalyst, ie, 9.36 g (19.5 mmol) of bistoluenebisperfluorophenylnickel was dissolved in 15 ml of toluene, and this solution was put into a 25 ml syringe, taken out of the glow box, and the above reaction. In addition to the flask, the reaction was terminated by stirring at 20 ° C. for 5 hours. Next, a peracetic acid solution (975 mmol) was added and stirred for 18 hours. When the stirring was stopped, the aqueous phase and the solvent phase were separated. After separating the aqueous phase, 1 l of distilled water was added and stirred for 20 minutes. Again, the aqueous phase separated and was removed. Furthermore, the solvent phase was washed 3 times with 1 l of distilled water. Thereafter, the polymer produced in the solvent phase was put into methanol, and the precipitate was collected by filtration, sufficiently washed with water, and then dried under vacuum. After drying, 243 g (yield 96%) of polymer was recovered. The molecular weight of the obtained polymer was Mw = 115,366 Mn = 47,000 and monodispersity = 2.43 as measured by GPC. The polymer composition was 70 mol% decylnorbornene repeating units and 30 mol% epoxynorbornene repeating units from H-NMR.

Next, 228 g of the synthesized polymer was dissolved in 342 g of mesitylene, and then 4-methylphenyl-4- (1-methylethyl) phenyliodonium tetrakis (pentafluorophenyl) borate) (0.2757 g, 2.71 × 10 ⁻⁴ mol). 1-chloro-4-propoxy-9H-thioxanthone (0.826 g, 2.71 × 10 ⁻⁴ mol), phenothiazine (0.054 g, 2.71 × 10 ⁻⁴ mol), 3,5-di-t-butyl-4-hydroxy Hydrocinnamate (0.1378 g, 2.60 × 10 ⁻⁴ mol) was added and dissolved, and then filtered through a fluororesin filter having a pore size of 0.2 μm to obtain a photosensitive resin composition.

Using the resin composition obtained above, the dielectric constant, glass transition temperature and elastic modulus were evaluated by the following measurement methods.
[Measurement method of dielectric constant, glass transition temperature and elastic modulus]
Dielectric constant: A single sample was measured by a resonance method based on ASTM D3380-75.
Glass transition point: TMA method Measured by the tensile mode.
Elastic modulus: DMA method Measured by tensile mode.

The photosensitive resin composition prepared above was applied onto a silicon single crystal wafer using a spin coater, and then dried on a hot plate at 100 ° C. for 10 minutes to form a first insulating resin layer having a thickness of about 10 μm. Got. This coating film was exposed at 300 mJ / cm ² through a reticle using an i-line stepper exposure machine NSR-4425i (manufactured by Nikon Corporation). Then, it heated at 115 degreeC with a hot plate for 15 minutes in order to promote the crosslinking reaction of an exposure part.
Thereafter, it was cured at 200 ° C. for 60 minutes to complete the crosslinking reaction.

  Next, after forming a film of titanium with a thickness of 2000 mm and copper with a thickness of 3000 mm on the entire surface of the first insulating resin layer by a sputtering apparatus, a dry film plating resist (AR-320 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is formed on the sputtered film. Laminated on top. The dry film plating resist was exposed at a predetermined site with an ultraviolet exposure device (HMW-201GX manufactured by Oak Manufacturing Co., Ltd.), and the unexposed portion was dissolved and removed with a 1.5% sodium carbonate aqueous solution. A conductor layer was formed by electrolytic plating in the openings thus obtained so as to have a thickness of 5 μm for copper, 3 μm for nickel, and 0.1 μm for Au. Thereafter, the plating resist is stripped and removed with a 3% aqueous sodium hydroxide solution, and then the sputtered film is etched with an etching solution (Cu etching solution: Entex made by Meltex, AD-485Ti etching solution: BHF120 made by Daikin Industries). A conductor circuit was obtained.

Next, the photosensitive resin composition obtained above was applied again on a silicon wafer on which a conductor circuit was formed using a spin coater, and then dried at 100 ° C. for 10 minutes on a hot plate, A coating film of about 10 μm was obtained. A predetermined portion of the coating film was exposed through a reticle at 300 mJ / cm ^{2 using an} i-line stepper exposure machine NSR-4425i (manufactured by Nikon Corporation). Then, it heated at 115 degreeC with a hot plate for 15 minutes in order to promote the crosslinking reaction of an exposure part.
Next, the unexposed portion was dissolved and removed by dipping in limonene for 60 seconds, and then rinsed with isopropyl alcohol for 20 seconds. Thereafter, the wafer was cut into a predetermined size to obtain individual silicon interposers.

  Two semiconductor elements having a thickness of 150 μm and a size of 10 × 10 mm were connected to the silicon interposer thus obtained by a flip chip method. The connection bumps formed on the semiconductor element were lead-free solder made of tin and silver, the size was φ100 μm, and the bump pitch was 200 μm. An underfill (CRP-4152D1 manufactured by Sumitomo Bakelite Co., Ltd.) was filled in the gap between the semiconductor element connected by the flip chip method and the silicon interposer by a capillary filling method and cured. Furthermore, a predetermined number of φ500 μm solder balls were formed on conductor pads provided on the outer periphery of the semiconductor element mounting portion, thereby obtaining a semiconductor package on which two semiconductor elements were mounted.

  The semiconductor package thus obtained was mounted on a predetermined printed wiring board and subjected to an operation confirmation test as a semiconductor device, and it was confirmed that there was no problem in operation as a semiconductor device.

It is sectional drawing which shows an example of the manufacturing method of the silicon interposer of this invention. It is sectional drawing which shows an example of the manufacturing method of the semiconductor device of this invention.

Explanation of symbols

101 Silicon single crystal wafer 102 First insulating resin layer 103 Sputtered film 104 Plating resist 105 Conductor circuit 106 Second insulating resin layer 107 Silicon interposer 108 Semiconductor element 109 with solder balls Underfill resin 109
110 Solder balls for external connection 111 Semiconductor device

Claims (7)

An interposer having a silicon single crystal wafer as a component, a first insulating resin layer having a dielectric constant of 2.4 or more and 3.2 or less on the wafer, and a semiconductor element mounted on the interposer A silicon interposer having a conductor circuit for connecting the external connection terminal to the external connection terminal. The silicon interposer according to claim 1, further comprising a second insulating resin layer having a dielectric constant of 2.4 or more and 3.2 or less on the conductor circuit. 3. The silicon interposer according to claim 2, wherein the second insulating resin layer has an opening for connecting a semiconductor element mounted on the silicon interposer and an external connection terminal. The at least one of the first insulating resin layer and the second insulating resin layer has a residual stress value represented by the following formula (1) of 60 MPa or less and 10 MPa or more. Silicon interposer.

[Where σ is the residual stress, E _resin (T) is the elastic modulus of the resin at temperature T ° C., α _resin (T) is the linear expansion coefficient of the resin at temperature T ° C., and α _si (T) is the semiconductor at temperature T ° C. The linear expansion coefficient of the element, Tg represents the glass transition temperature of the insulating resin, and T1 represents the cooling temperature of the temperature cycle test. ] 6. The silicon interposer according to claim 2, wherein the first insulating resin layer and the second insulating resin layer have a glass transition temperature of 240 ° C. or higher. The first insulating resin layer and the second insulating resin layer have an elastic modulus of 0.005 GPa to 1 GPa in a temperature range of -65 ° C to 150 ° C. Silicon interposer as described in 1. A semiconductor element is mounted on the silicon interposer according to claim 1, a conductor circuit on the silicon interposer and the semiconductor element are electrically connected, and the conductor circuit is connected to the semiconductor element via the conductor circuit. A semiconductor device, wherein a semiconductor element and an external connection terminal are connected.

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