JP2006261408A - Semiconductor apparatus and image display device employing it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which impairment with the passage of time is reduced without damaging a separated organic semiconductor layer. <P>SOLUTION: In the semiconductor apparatus comprising a plurality of organic thin film transistor elements on an insulating substrate 1, the organic thin film transistor element comprises a gate electrode 2, a gate insulation film 3, a source electrode 6, a drain electrode 5, an organic semiconductor layer 4, and a divided patterning layer 8 provided through an organic semiconductor protection layer 7 wherein the organic thin film transistors are isolated from each other by separating at least the mutual organic semiconductor layers 4, and the separation end face of each organic semiconductor layer 4 and the upper part of the divided patterning layer 8 are covered with a passivation protective layer 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device including an organic thin film transistor and an image display device using the same.

  The achievement of a flexible sheet display composed of pixels (for example, a display unit such as a liquid crystal, an organic EL, and an electrophoretic microcapsule and a transistor for driving the pixel) formed in a matrix arrangement on a substrate is expected.

  An organic thin film transistor is a promising device as a transistor used in such a flexible sheet display. Advantages of using an organic semiconductor material for the transistor include flexibility, a large area, simplification of a process with a simple layer structure, and an inexpensive manufacturing apparatus. As a result, it can be manufactured by orders of magnitude cheaper than conventional silicon (Si) semiconductor devices.

  By configuring a device using an organic material, a thin film or a circuit can be easily formed by a wet method such as a printing method, a spin coating method, or an immersion method.

  When used in the above-described display or the like, it is necessary to integrate a plurality of organic thin film transistor elements on the same substrate. When organic thin film transistors are integrated on the same substrate, an organic semiconductor layer serving as an active layer is divided. This is because when the organic semiconductor layer is not divided, the off-current in the transistor operation increases, leading to power consumption, and causing crosstalk when driving the display pixel.

  In a thin film transistor (TFT) using a silicon (Si) semiconductor material, the division of the active layer is performed by a photolithography etching process. When this method is applied to an organic thin film transistor, the following steps are performed. After forming the organic semiconductor layer, a photoresist is applied, and a desired pattern is exposed and developed to form a resist pattern. Then, using this as an etching mask, the organic semiconductor layer to be an active layer is etched, the resist is removed, and the organic semiconductor layer is divided.

  However, when a polymer material is used as the organic semiconductor material, if a photoresist is applied on the polymer material, the polymer material is deteriorated. The photoresist component is constituted by dissolving a novolak resin having naphthoquinonediazide as a photosensitive group in an organic solvent such as xylene or a cellosolve solvent. In the case of a polymer material, there is a problem that it is dissolved by a solvent such as xylene contained in the photoresist. Even when crystalline molecules such as pentacene are used as the organic semiconductor material, characteristic deterioration is recognized after the photolithography process although there is a difference in degree.

  Further, when the resist is stripped using a stripping solution such as a mixed solution of ethylene glycol monobutyl ether and monoethanolamine, the solvent is damaged. Moreover, damage is received also by the pure water rinse after a peeling liquid process.

  On the other hand, as a method for dividing the active layer without using a photolithography / etching step, the active layer can be divided and formed by a vacuum evaporation method using a low molecular material as the organic semiconductor layer and using a shadow mask. As a method for injecting a semiconductor polymer using a shadow mask, for example, there is a method described in Patent Document 1.

  However, this method has a drawback that the division size is limited by the shadow mask. That is, it is not suitable for film formation with a large area, and the shadow mask has a lifetime, and as a result, it cannot be manufactured at low cost.

In order to provide an organic thin film transistor in which a semiconductor channel region is patterned, a patterned insulating film is formed, an organic semiconductor film is deposited thereon, and an organic semiconductor film formed in the region from which the patterned insulating film has been removed is formed. A semiconductor device having a channel region has been proposed (see, for example, Patent Document 2). In this method, an active layer made of an organic semiconductor can be divided for each element. However, in the semiconductor device described in Patent Document 2, the surface of the organic semiconductor layer remains exposed. The organic semiconductor layer has a problem that the characteristic deterioration is remarkable due to the influence of moisture, oxygen, etc. in the atmosphere, and some measures are required.
Special table 2003-536260 gazette JP 2000-269504 A

  The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to provide a semiconductor device with little deterioration with time without damaging the separated organic semiconductor layer.

  The present invention is a semiconductor device in which a plurality of organic thin film transistor elements are provided on an insulating substrate, and the organic thin film transistor elements include a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer. The organic thin film transistors are separated from each other by at least separating the organic semiconductor layers from each other, and the separation end face portion of each organic semiconductor layer and the upper portion of the organic semiconductor layer are covered with a passivation protective layer. It is characterized by that.

  Further, the present invention is characterized in that a divided patterned layer is provided on the organic semiconductor layer via an organic semiconductor protective layer.

  The organic semiconductor protective layer, the gate insulating film, and the passivation protective layer are preferably made of the same material, and the organic semiconductor protective layer, the gate insulating film, and the passivation protective layer are preferably made of a polyparaxylylene derivative film.

  The polyparaxylylene derivative film may be selected from polymonochloroparaxylylene, polyparaxylylene, polydichloroparaxylylene, and polymonofluoroparaxylylene.

で表される繰り返し単位を有する重合体を含むトリアニールアミン骨格を有する高分子材料を用いればよい。 The organic semiconductor layer has the general formula (I)

A polymer material having a trianneal amine skeleton including a polymer having a repeating unit represented by

  An image display apparatus according to the present invention is characterized in that any of the semiconductor devices described above is used as an active element.

  According to this invention, since the end face of the element is covered with the passivation protective film, the organic semiconductor layer is completely shielded from the atmosphere, so that deterioration of characteristics can be suppressed. As a result, long-term stable transistor characteristics can be obtained.

    Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic cross-sectional view showing the basic structure of a semiconductor device having an organic thin film transistor element according to an embodiment of the present invention.

  As shown in FIG. 1, a plurality of gate electrodes 2 made of aluminum (Al) or the like are provided in a predetermined region on an insulating substrate 1, and gate insulation made of an organic insulating film is formed so as to cover these gate electrodes 2. A membrane 3 is provided. An organic semiconductor layer 4 is provided on the gate insulating film 3. In the organic thin film transistor (TFT) element according to the present invention, the organic semiconductor layer 4 is mainly composed of a polymer material having a triarylamine skeleton represented by the general formula (I). A source electrode 6 and a drain electrode 5 made of gold (Au) or the like are provided on the organic semiconductor layer 4.

  An organic semiconductor protective layer 7 that covers the organic semiconductor layer 4 and the source and drain electrodes 6 and 5 is provided. The organic semiconductor protective layer 7 is required not to damage the organic semiconductor layer 4, and to not give the organic semiconductor layer 4 the influence of the divided patterned layer 8 provided on the protective layer 7. For this reason, the protective layer 7 is formed by a simple process capable of forming a film at a low temperature, having extremely low moisture and oxygen (gas) permeability, capable of uniform coating regardless of the surface shape. In addition, it is required that the organic semiconductor layer 4 can be divided by the same method as the division of the organic semiconductor layer 4 and has resistance to acid and alkali. In this embodiment, a polyparaxylylene derivative film is used to meet such a demand.

  After forming the source and drain electrodes 6 and 5 on the organic semiconductor layer 4, a protective layer 7 made of a polyparaxylylene derivative film is formed by a chemical vapor deposition method (CVD method). On the protective layer 7, a divided patterned layer 8 made of a photosensitive resin is provided. The divided patterned layer 8 is coated with a photosensitive resin, and a desired pattern is exposed and developed to form a re-pattern. Since the protective layer 7 exists between the divided patterned layer 8 and the organic semiconductor layer 4, the divided patterned layer 8 made of a photosensitive resin is not in direct contact, and the protective layer 7 has oxygen and moisture. Therefore, the organic semiconductor layer 4 is not damaged by the formation of the divided patterned layer 8. The protective layer 7 not only protects the organic semiconductor layer 4 against the divided patterned layer 8 but also functions as a passivation film.

  Subsequently, using the divided patterned layer 8 as a mask, the protective layer 7, the organic semiconductor layer 4, and the gate insulating film 3 under the separation region are removed by etching by dry etching, so that each element is separated by the dividing line 10. . In this embodiment, a passivation protection film 11 is further provided as will be described later. At this time, the divided patterned layer 8 may be removed or may be left as it is, and may be appropriately selected depending on the application to be used.

  And since the end surface of the organic-semiconductor layer 4 isolate | separated by the dividing line 10 will be exposed to air | atmosphere in this state, a characteristic will deteriorate over time. Therefore, in this embodiment, the passivation layer 11 that covers the divided patterned layer 8 and the end face of the element is provided.

  The passivation protective film 11 is required to have the following properties. In other words, it has extremely low moisture and oxygen (gas) permeability, is created by a simple process that enables low-temperature film formation, can be coated uniformly without depending on the surface shape, chemicals It is required to have excellent resistance to heat and to have heat resistance to process temperature.

  In particular, as shown in FIG. 1, the distance from the surface of the substrate 1 to the upper part of the divided patterned layer 8 is, for example, 3000 nm or more, and the height difference becomes large. For this reason, the passivation protection film 11 needs to be formed without depending on the substrate shape.

  In order to meet these requirements, there is a polyparaxylylene derivative film similar to the organic semiconductor layer protective layer 7. In this embodiment, a polyparaxylylene derivative film is used as the passivation protective film 11.

The polyparaxylylene derivative film has very little oxygen (gas) and moisture permeability in organic coatings. Further, it is insoluble in organic solvents, is advantageous for laminating thin films, and has resistance to acids and alkalis. In addition, a thin film with good step coverage at room temperature can be easily formed by chemical vapor deposition (CVD). Furthermore, it exhibits an insulating property with a relative dielectric constant of about 3.1 to 3.2 and a resistivity of 10 ¹⁴ Ωcm or more, and can also function as an insulating film between layers or electrodes.

  Thus, according to this embodiment, since the end face of the element is covered by the passivation protective film 11 made of the polyparaxylylene derivative film, the organic semiconductor layer 4 is completely shielded from the atmosphere. Deterioration of characteristics can be suppressed.

  In the above-described embodiment, the gate insulating film 3 is removed in the divided region. However, element isolation can be performed by removing and separating the organic semiconductor layer 4, so that the gate insulating film is not necessarily removed. Also good.

  Incidentally, the gate insulating film 3 is required to be a high quality oxide film. As a high quality oxide film, there is an organic insulating film made of a polyparaxylylene derivative film. For this reason, in this embodiment, a polyparaxylylene derivative is used for the gate insulating film 3 as well as the protective layer 7 and the passivation protective film 11 described above. Thus, by using the same material for the gate insulating film 3 as the protective layer 7 and the passivation protective film 11 described above, the manufacturing apparatus can be simplified and the manufacturing cost can be reduced.

  In the semiconductor device of the present invention, a polyparaxylylene derivative film is used as the gate insulating film 3, the protective layer 7, and the passivation protective film 11.

  By the way, the operation of the field effect transistor is expressed by the following equation.

_{I DS = W / 2L × μ} × C i × (V G -Vth) 2
C _i = ε ₀ × ε _r / d
Here, I _DS : drain current, W: gate width, L: gate length, μ: mobility, C _i : capacitance of gate insulating film, V _G : gate voltage, V _th : threshold voltage, ε ₀ : Dielectric constant of vacuum, ε _r : relative dielectric constant, d: film thickness.

Regardless of the transistor shape, high I _DS can be obtained by high mobility μ, high capacitance C _i and low threshold (operation) voltage V _th . Since the mobility depends on the semiconductor material, it is desired to develop an organic semiconductor layer material having a high mobility. _Increasing the voltage of V _G causes an increase in power consumption, which is not preferable. High capacitance can be achieved relatively easily by using a material having a high relative dielectric constant ε _r and reducing the film thickness d.

  Therefore, in this embodiment, the gate insulating film 3 is configured to obtain a high on / off ratio by reducing the thickness of the polyparaxylylene derivative film.

  Here, the polyparaxylylene derivative film is a coating film formed by a gas phase synthesis method made of polyparaxylylene resin developed by Union Carbide Chemicals & Plastics, Inc. of the United States. This coating film is formed by vaporizing and thermally decomposing diparaxylylene solid dimer as a raw material, and causing the stable diradical paraxylylene monomer generated at this time to cause simultaneous reaction of adsorption and polymerization on the substrate.

Next, an embodiment of the present invention in which poly-monochloro-para-xylylene is used as the polyparaxylylene derivative film will be described in detail. Poly-monochloro-para-xylylene exhibits an insulating property with a resistivity of 10 ¹⁴ Ωcm or more, a relative dielectric constant of about 3.1 to 3.2, and a low dielectric loss (0.020). (60 Hz), 0.019 (1 kHz), 0.013 (1 MHz)).

  Polymonochloroparaxylylene has a structure represented by the following chemical formula (2).

  A specific example of an organic thin film transistor using polymonochloroparaxylylene as the gate insulating film 3, the protective layer 7, and the passivation protective film 11 will be described. First, the insulating substrate 1 is prepared. As the substrate 1, any substrate having insulating properties may be used, and a Si wafer, a glass substrate, a ceramic substrate, or a plastic sheet can be used.

  In this example, a glass substrate was used. A gate electrode 2 made of Al having a thickness of 30 nm is formed on the insulating substrate 1 by a vacuum deposition method using a shadow mask, and the gate electrode 2 corresponding to a plurality of elements is formed on a predetermined region of the substrate 1. Form.

  After forming the gate electrodes 2..., A polymonochloroparaxylylene film is formed from a dimonochloroparaxylylene solid dimer by a CVD method at room temperature to form the gate insulating film 3. The dimonochloroparaxylylene solid dimer as a raw material was vaporized and thermally decomposed, and the generated stable diradical monochloroparaxylylene monomer caused a simultaneous reaction of adsorption and polymerization on the substrate to form the gate insulating film 3. In this example, a polymonochloroparaxylylene film having a thickness of 600 nm was formed.

  A polymer material having a triarylamine skeleton represented by the above general formula (I) is used as a semiconductor material on the gate insulating film 3 made of a polymonochloroparaxylylene film as a semiconductor material. A semiconductor layer 4 is provided.

  Subsequently, a source film 6 and a drain electrode 5 were formed by patterning an Au film having a thickness of 50 nm in a predetermined region on the organic semiconductor layer 4 by a vacuum deposition method using a shadow mask. The channel length and gate width of each transistor were L = 30 μm and W = 4000 μm.

  Subsequently, a polymonochloroparaxylylene film having a thickness of 500 nm was formed as a protective layer 7 on the organic semiconductor layer 4 including the source electrode 6 and the drain electrode 5. The film was formed by a CVD method at room temperature from a monochloroparaxylylene solid dimer in the same manner as the film formation of the gate insulating film 3.

Then, the division | segmentation pattern layer 8 was formed on the protective layer 7 using the main component photosensitive resin of polyvinyl alcohol (PVA). In this example, photosensitive PVA manufactured by Toyo Gosei Co., Ltd. was used. After forming the protective layer 7 made of a polymonochloroparaxylylene film, the solid content concentration was 5 wt%, spin-coating was performed at a rotational speed of 1000 rpm, and the film was dried at 60 ° C. for 10 minutes. The film thickness of this photosensitive PVA was 2000 nm. Then, it exposed with g line | wire and the exposure amount of 10 mW / cm < ² >, and developed with the pure water, and the division | segmentation patterning layer 8 of the transistor was formed.

  Then, using the divided patterned layer 8 as a mask, the protective layer 7, the organic semiconductor layer 4 and the gate insulating film 3 located under the dividing line are removed by dry etching with oxygen gas, and separated into TFT elements. The object to be etched in this etching process is a protective layer 7 made of a polymonochloroparaxylylene film of 500 nm, an organic semiconductor layer 4 of 30 nm, a gate insulating film 3 made of a polymonochloroparaxylylene film of 600 nm, and a resist film. Since the thickness is 2000 nm, the division of the semiconductor layer is completed before the PVA film is dry-etched.

  Subsequently, a polymonochloroparaxylylene film is formed on the substrate 1 and the divided patterned layer 8 from a dimonochloroparaxylylene solid dimer by a CVD method at room temperature to form a passivation protective film 11. This film is formed by vaporizing and thermally decomposing the raw material dimonochloroparaxylylene solid dimer, and the generated stable diradical monochloroparaxylylene monomer causes a simultaneous reaction of adsorption and polymerization on the substrate, thereby protecting the passivation film. 11 was formed. In this example, a polymonochloroparaxylylene film having a film thickness of 2000 nm was formed.

  The structure of the organic thin film transistor manufactured by the above-described method is as follows: substrate 1, gate electrode 2 made of Al, gate insulating film 3 made of polymonochloroparaxylylene film, organic semiconductor layer 4, source and drain electrodes 6, 5, poly A protective layer 7 made of a monochloroparaxylylene film, a divided patterned layer 8 and a passivation protective film 11 are formed.

  Next, a semiconductor device of the reference example shown in FIG. 2 was prepared in the same manner as in this example except that the passivation protective film 11 was not provided. 2 is exactly the same as the structure of FIG. 1 except that the passivation protection film 11 is not provided. The same parts are denoted by the same reference numerals, and are described here to avoid duplication of explanation. Is omitted.

  Table 1 shows the results of measuring the transistor static characteristics in Example 1 and the reference example, and the characteristics of changes with time after 100 hours. The test conditions of the sample over time were stored at a temperature of 25 ° C. and a humidity of 50% for 1000 hours.

From Table 1, in the reference example, the initial values are the on-current I _on , 6.9 × 10 ⁻⁶ A, the off-current I _off , 1.0 × 10 ⁻¹¹ A. The on / off ratio (VG = −20 V / VG = 0 V) is 6.9 × 10 ⁴ .

After 1000 hours, the on current I _on , 7.3 × 10 ⁻⁶ A, the off current I _off , and 1.5 × 10 ⁻¹¹ A are obtained. The on / off ratio (VG = −20 V / VG = 0 V) is 5.0 × 10 ⁴ . The on / off ratio decreased by 28% due to the increase in off-current.

On the other hand, in the embodiment of the present invention, the initial values are on-current I _on , 7.0 × 10 ⁻⁷ A, off-current I _off , 9.0 × 10 ⁻¹³ A. The on / off ratio (VG = −20 V / VG = 0 V) is 7.8 × 10 ⁵ .

After 1000 hours, the on-current I _on 6.8 × 10 ⁻⁷ A, the off-current I _off , 1.0 × 10 ⁻¹² A. The on / off ratio (VG = −20 V / VG = 0 V) is 6.8 × 10 ⁵ . The increase in the off-current with time was suppressed, and the on / off ratio was only reduced by 13%, confirming the effect of the passivation protective film 11.

  The polyparaxylylene derivative film includes poly-para-xylylene, poly-dichloro-para-xylylene, poly-dichloro-para-xylylene, poly-poly-para-xylylene, poly-dichloro-para-xylylene, and poly-poly-para-xylylene. Monofluoroparaxylylene (poly-monofluoro-para-xylylene) can also be used. Poly-para-xylylene has an insulation property of a dielectric breakdown voltage of 2.8 MV / cm or more, and the relative dielectric constant was around 2.7 regardless of the film thickness. Polyparaxylylene has a structure represented by Chemical Formula 3.

  Polydichloroparaxylylene had an insulation breakdown voltage of 2.7 MV / cm or more, and the relative dielectric constant was around 2.9 regardless of the film thickness. Polydichloroparaxylylene has a structure represented by Chemical Formula 4.

  Polymonofluoroparaxylylene had an insulation property of a dielectric breakdown voltage of 2 MV / cm or more, and the relative dielectric constant was about 2.6 regardless of the film thickness. Polymonofluoroparaxylylene has a structure represented by Chemical Formula 5.

  Next, an embodiment in which the semiconductor device of the present invention is used as an active matrix element of an image display device will be described. FIG. 3 is a plan view showing an example in which the semiconductor device of the present invention is used for an active matrix substrate of an image display device, and FIG. 4 is a longitudinal sectional view of the image display device using the active matrix substrate of the present invention. An active matrix display device can be configured by combining an active matrix substrate with an image display device such as liquid crystal, electrophoresis, or organic EL.

  As shown in FIG. 3, a Cr film having a thickness of 70 nm is formed on an insulating substrate 1 such as a glass substrate by a sputtering method, and a scanning line 20 and a gate electrode 2 are formed by a photolithography etching process. A polymonochloroparaxylylene film having a thickness of 200 nm is formed by a CVD method as an insulating film that becomes an interlayer insulating film between the gate insulating film 3 and the scanning line 20 and the signal wiring.

  Then, a polymer material having a triarylamine skeleton represented by the above general formula (I) is used as a semiconductor material on the polymonochloroparaxylylene film as a semiconductor material, and a film is formed by spin coating to form an organic semiconductor layer having a thickness of 30 nm. 4 is provided.

  Subsequently, an Au film having a thickness of 50 nm is formed in a predetermined region on the organic semiconductor layer 4 by a vacuum deposition method using a shadow mask, and the source electrode 6 and the drain electrode 5, the signal wiring 21 and the drain electrode 5, A continuous pixel wiring 22 is formed.

  Subsequently, a polymonochloroparaxylylene film having a film thickness of 500 nm and serving as a protective layer 7 is formed on the organic semiconductor layer 4 including the source electrode 6 and the drain electrode 5, the signal wiring 21, and the pixel wiring 22 connected to the drain electrode 5. Film. Then, a photosensitive PVA film having a thickness of 2000 nm was formed. A divided patterned film 8 is formed by a photolithography process.

  Then, using the divided patterned layer 8 as a mask, the protective layer 7, the organic semiconductor layer 4, and the gate insulating film 3 located under the dividing line are removed by dry etching using oxygen gas, and the TFT elements are separated. Further, a passivation film 11 made of a polymonochloroparaxylylene film is provided on these elements, and an active matrix substrate 31 is formed.

  As shown in FIG. 5, the image display device 30 includes a display element provided between the above-described active matrix substrate 31 and the transparent conductive film 32 and the second substrate 33, and is on the drain electrode 5 connected to the pixel electrode 22. The display elements are switched. As the second substrate 33, plastic such as glass, polyester, polycarbonate, polyarylate, polyether sulfone, or the like can be used. As the display element 34, methods such as liquid crystal, electrophoresis, and organic EL can be used.

  In the case of configuring a liquid crystal panel, for example, an alignment film is formed on the substrate of the active matrix substrate 31 and the second substrate 33 by spin coating and subjected to alignment treatment. A silica spacer is disposed and bonded between the substrates 1 and 33, and a liquid crystal material is sealed between the gaps to form a liquid crystal panel.

  In addition, the electrophoretic display panel can be formed by forming a transparent conductive film, placing a silica spacer on a counter substrate and joining the same, and encapsulating a microcapsule type electrophoretic element between the gaps.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and is intended to include meanings equivalent to the scope of claims for patent and all modifications within the scope.

It is typical sectional drawing which shows the basic structure of the semiconductor device which has the organic thin-film transistor element concerning embodiment of this invention. It is typical sectional drawing which shows the basic structure of the semiconductor device of the reference example of this invention. It is a top view which shows the example which used the semiconductor device of this invention for the active-matrix board | substrate of an image display apparatus. It is a longitudinal cross-sectional view of the image display apparatus using the active matrix substrate of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Gate electrode 3 Gate insulating film 4 Organic-semiconductor layer 5 Drain electrode 6 Source electrode 7 Organic-semiconductor protective layer 8 Divided patterned layer 10 Divided line 11 Passivation protective film

Claims (8)

A semiconductor device having a plurality of organic thin film transistor elements provided on an insulating substrate, the organic thin film transistor element comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer Each organic thin film transistor is separated from each other by at least separating the organic semiconductor layers from each other, and the separation end surface portion of each organic semiconductor layer and the upper portion of the organic semiconductor layer are covered with a passivation protective layer. Semiconductor device. The semiconductor device according to claim 1, wherein a divided patterned layer is provided on the organic semiconductor layer via an organic semiconductor protective layer. 3. The semiconductor device according to claim 1, wherein the organic semiconductor protective layer, the gate insulating film, and the passivation protective layer are made of the same material. 4. The semiconductor device according to claim 3, wherein the organic semiconductor protective layer, the gate insulating film, and the passivation protective layer are formed of a polyparaxylylene derivative film. 5. The film according to claim 4, wherein the polyparaxylylene derivative film is a film selected from polymonochloroparaxylylene, polyparaxylylene, polydichloroparaxylylene, and polymonofluoroparaxylylene. The semiconductor device described. The semiconductor device according to claim 5, wherein the photosensitive resin contains polyvinyl alcohol as a main component. The organic semiconductor layer has the general formula (I)

The semiconductor device according to claim 1, which is a polymer material having a trianneal amine skeleton including a polymer having a repeating unit represented by the formula: 8. An image display device using the semiconductor device according to claim 1 as an active element.

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