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JP2006260939A - Manufacturing method and manufacturing device of organic el element - Google Patents

Manufacturing method and manufacturing device of organic el element Download PDF

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JP2006260939A
JP2006260939A JP2005076760A JP2005076760A JP2006260939A JP 2006260939 A JP2006260939 A JP 2006260939A JP 2005076760 A JP2005076760 A JP 2005076760A JP 2005076760 A JP2005076760 A JP 2005076760A JP 2006260939 A JP2006260939 A JP 2006260939A
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substrate
chamber
organic
mask
cooling
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JP4780983B2 (en
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Koji Hane
功二 羽根
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Ulvac Inc
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Ulvac Inc
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Priority to TW095107065A priority patent/TWI406442B/en
Priority to KR1020060024554A priority patent/KR101229595B1/en
Priority to CNA2006100596744A priority patent/CN1835258A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing technique of an organic EL element free from contamination of a substrate at pretreatment process, and for forming a precise organic light emitting layer by precisely positioning a mask on the substrate. <P>SOLUTION: The manufacturing method of organic EL element comprises the pretreatment process for the substrate 10, and the pretreatment process comprises a process of heating and cooling the substrate 10 in vacuum. A film formation mask 11 is positioned on the substrate 10 after the cooling process, and a hole transport layer is formed on the substrate 10 through the film forming mask 11, afterwards, at least an organic light emitting layer for one color is formed. The cooling at pretreatment process is carried out in a cooling chamber 24 after heating treatment in a baking chamber 23, and after vacuum plasma treatment in a pretreatment chamber 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、真空中で有機EL素子を製造する技術に関し、特に成膜対象物である基板と成膜用のマスクを位置合わせする技術に関する。   The present invention relates to a technique for manufacturing an organic EL element in a vacuum, and more particularly to a technique for aligning a substrate that is a film formation target and a film formation mask.

一般に、有機EL素子を製造する際には、有機EL素子の発光輝度の低下を防止するため、透明電極付き基板に対し、加熱冷却処理及びプラズマ処理による前処理を行っている。   Generally, when manufacturing an organic EL element, in order to prevent a decrease in light emission luminance of the organic EL element, pretreatment by heating and cooling treatment and plasma treatment is performed on the substrate with a transparent electrode.

しかし、従来技術にあっては、大気圧中で基板の加熱及び冷却を行っているため、基板を真空中に配置したときに基板が汚染された状態になっているという問題があった。   However, in the prior art, since the substrate is heated and cooled at atmospheric pressure, there is a problem that the substrate is contaminated when the substrate is placed in a vacuum.

また、従来技術では、加熱処理及びプラズマ処理の際に基板が熱膨張するため、基板とマスクとの正確な位置合わせが困難であり、特に精細な有機発光層の形成に問題が生じていた。
特開2003−142261公報
Further, in the prior art, since the substrate is thermally expanded during the heat treatment and the plasma treatment, it is difficult to accurately align the substrate and the mask, and there has been a problem in forming a fine organic light emitting layer.
JP 2003-142261 A

本発明は、このような従来の技術の課題を解決するためになされたもので、その目的とするところは、前処理工程における基板の汚染の問題がなく、しかも基板とマスクとの正確な位置合わせを行って精細な有機発光層を形成することが可能な有機EL素子製造技術を提供することにある。   The present invention has been made to solve the above-described problems of the prior art, and the object of the present invention is to prevent the problem of contamination of the substrate in the pretreatment process and to accurately position the substrate and the mask. An object of the present invention is to provide an organic EL element manufacturing technique capable of forming a fine organic light emitting layer by combining them.

上記目的を達成するためになされた請求項1記載の発明は、基板に対する前処理工程を有する有機EL素子製造方法であって、前記前処理工程が、真空中で前記基板を加熱及び冷却する工程を有し、当該冷却工程の終了後、当該基板に対して成膜用マスクの位置合わせを行い、さらに、前記成膜用マスクを介して有機層の形成を行う工程を有するものである。
請求項2記載の発明は、請求項1記載の発明において、前記有機層の形成を行う工程は、当該基板上にホール輸送層を形成する工程と、少なくとも1色の有機発光層の形成を行う工程を有するものである。
請求項3記載の発明は、請求項1乃至2のいずれか1項記載の発明において、前記冷却工程を複数回行うものである。
請求項4記載の発明は、基板に対する処理の際に当該基板が加熱される基板加熱室と、前記基板を冷却する冷却室と、前記基板に対して成膜用マスクの位置合わせを行う位置合わせ室とが、真空雰囲気下で互いに基板の受け渡しを行うように構成され、前記位置合わせ室の後段に設けられ、前記基板に対して有機層の形成を行う有機層形成部を備えた有機EL素子製造装置である。
請求項5記載の発明は、請求項4記載の発明において、前記基板加熱室が、前記基板を加熱処理を行う加熱処理室と、前記基板に対してラジカルソースを用いて前処理を行う前処理室とを有するものである。
The invention according to claim 1, which has been made to achieve the above object, is a method of manufacturing an organic EL element having a pretreatment step for a substrate, wherein the pretreatment step is a step of heating and cooling the substrate in a vacuum. And after completion of the cooling step, the step of aligning the film formation mask with respect to the substrate and further forming the organic layer through the film formation mask is provided.
According to a second aspect of the present invention, in the first aspect of the invention, the step of forming the organic layer includes forming a hole transport layer on the substrate and forming an organic light emitting layer of at least one color. It has a process.
According to a third aspect of the present invention, in the first aspect of the present invention, the cooling step is performed a plurality of times.
According to a fourth aspect of the present invention, there is provided a substrate heating chamber in which the substrate is heated during processing of the substrate, a cooling chamber for cooling the substrate, and alignment for aligning a film formation mask with respect to the substrate. And an organic EL device comprising an organic layer forming portion that is provided in a subsequent stage of the alignment chamber and that forms an organic layer on the substrate. It is a manufacturing device.
The invention according to claim 5 is the invention according to claim 4, wherein the substrate heating chamber is a heat treatment chamber for performing heat treatment on the substrate, and pretreatment for performing pretreatment on the substrate using a radical source. And a chamber.

本発明にあっては、前処理工程の際に真空中で基板を冷却することから、基板の汚染の問題は発生せず、しかも短時間で冷却処理を行うことができる。   In the present invention, since the substrate is cooled in a vacuum during the pretreatment process, the problem of contamination of the substrate does not occur, and the cooling process can be performed in a short time.

また、本発明によれば、冷却工程の終了後、当該基板に対して成膜用マスクの位置合わせを行い、さらに、前記成膜用マスクを介して有機層(例えばホール輸送層及び少なくとも1色の有機発光層)の形成を行うことから、前処理工程後における基板の熱膨張を阻止することができ、これにより基板と成膜用マスクとの正確な位置合わせを行って精細な有機発光層を形成することが可能になる。   In addition, according to the present invention, after the cooling step is completed, the film formation mask is aligned with respect to the substrate, and the organic layer (for example, the hole transport layer and at least one color is interposed through the film formation mask). The organic light-emitting layer) can prevent thermal expansion of the substrate after the pretreatment step, thereby accurately aligning the substrate and the film-forming mask, thereby providing a fine organic light-emitting layer. Can be formed.

さらに、本発明において、前処理工程の際に冷却工程を複数回行うようにすれば、基板の温度を常に一定に保持することができるので、基板と成膜用マスクとの位置合わせをより正確に行うことができる。   Furthermore, in the present invention, if the cooling process is performed a plurality of times during the pretreatment process, the temperature of the substrate can be kept constant at all times, so that the alignment between the substrate and the film-formation mask can be made more accurate. Can be done.

そして、本発明の有機EL素子製造装置によれば、有機層形成の前に基板と成膜用マスクとの正確な位置合わせを行って精細な有機発光層を効率良く形成可能な有機EL素子製造装置を提供することができる。   According to the organic EL element manufacturing apparatus of the present invention, the organic EL element manufacturing capable of efficiently forming a fine organic light emitting layer by accurately aligning the substrate and the film formation mask before forming the organic layer. An apparatus can be provided.

本発明によれば、有機層形成の前に基板と成膜用マスクとの正確な位置合わせを行って精細な有機発光層を形成することができる。   According to the present invention, a precise organic light-emitting layer can be formed by accurately aligning the substrate and the deposition mask before forming the organic layer.

以下、本発明の好ましい実施の形態を図面を参照して詳細に説明する。
図1は、本発明に係る有機EL素子製造装置の第1の実施の形態を示す要部概略構成図、図2(a)(b)は、同実施の形態における前処理部の処理手順を示す概略構成図である。
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic configuration diagram of a main part showing a first embodiment of an organic EL element manufacturing apparatus according to the present invention, and FIGS. 2A and 2B show a processing procedure of a preprocessing unit in the same embodiment. It is a schematic block diagram shown.

図1に示すように、本実施の形態の有機EL素子製造装置1は、基板10に対して前処理を行う前処理部2と、基板10上に有機発光層を蒸着形成する有機発光層形成部(有機層形成部)3とを有している。   As shown in FIG. 1, the organic EL element manufacturing apparatus 1 of the present embodiment includes a pretreatment unit 2 that performs pretreatment on a substrate 10, and an organic light emitting layer formation that deposits an organic light emitting layer on the substrate 10. Part (organic layer forming part) 3.

これら前処理部2及び有機発光層形成部3の後述する各室は、図示しない真空排気系に接続され、真空雰囲気下で図示しない搬送ロボットを用いて基板10の受け渡しを行うように構成されている。   The chambers to be described later of the pretreatment unit 2 and the organic light emitting layer forming unit 3 are connected to a vacuum exhaust system (not shown) and configured to deliver the substrate 10 using a transfer robot (not shown) in a vacuum atmosphere. Yes.

本実施の形態の前処理部2は、基板搬送室20の周囲に、基板仕込室21、ベーク室(基板加熱室、加熱処理室)22、冷却室23、前処理室(基板加熱室)24が配設されて構成されている。   The pretreatment unit 2 of the present embodiment includes a substrate preparation chamber 21, a bake chamber (substrate heating chamber, heat treatment chamber) 22, a cooling chamber 23, and a pretreatment chamber (substrate heating chamber) 24 around the substrate transfer chamber 20. Is arranged.

ここで、ベーク室22内には、図示しないマルチホットプレートが設けられ、このマルチホットプレートによって基板10に対して短時間で安定して加熱を行うようになっている。   Here, a multi-hot plate (not shown) is provided in the bake chamber 22, and the multi-hot plate heats the substrate 10 stably in a short time.

一方、冷却室23内には、図示しないマルチ冷却プレートが設けられ、このマルチ冷却プレートによって基板10に対して短時間で安定して冷却を行うようになっている。   On the other hand, a multi-cooling plate (not shown) is provided in the cooling chamber 23, and the multi-cooling plate cools the substrate 10 stably in a short time.

また、前処理室24は、例えば、ラジカルソースにより発生させた酸素(O2)プラズマを用いて基板10の表面のコンディショニングを行うように構成されている。
そして、基板搬送室20の後段には、基板受け渡し室25を介して第1の微調室(位置合わせ室)26が設けられている。
The pretreatment chamber 24 is configured to condition the surface of the substrate 10 using, for example, oxygen (O 2 ) plasma generated by a radical source.
A first fine adjustment chamber (positioning chamber) 26 is provided at the rear stage of the substrate transfer chamber 20 via a substrate transfer chamber 25.

この第1の微調室26は、マスク供給室27から基板受け渡し室25を介して供給された成膜用マスク(以下「マスク」という。)11に対し、図示しないアライメント機構を用いて基板10を位置合わせして組み付けるように構成されている。   The first fine-tuning chamber 26 uses the alignment mechanism (not shown) to deposit the substrate 10 on the film-forming mask (hereinafter referred to as “mask”) 11 supplied from the mask supply chamber 27 via the substrate delivery chamber 25. It is configured to be aligned and assembled.

本実施の形態の有機発光層形成部3は、上記第1の微調室26の後段に設けられた第1の有機蒸着室30Rを有している。   The organic light emitting layer forming unit 3 of the present embodiment has a first organic vapor deposition chamber 30 </ b> R provided at the subsequent stage of the first fine tuning chamber 26.

そして、第1の有機蒸着室30Rは、第1の搬送室31から受け渡されたマスク付き基板12を搬送しつつ、ホール輸送層用の有機材料と、例えば光の3原色のうち赤色発光用の第1の有機材料を基板10上に連続的に蒸着するように構成されている。   The first organic vapor deposition chamber 30 </ b> R transports the masked substrate 12 delivered from the first transport chamber 31, and emits red light among the organic materials for the hole transport layer and, for example, the three primary colors of light. The first organic material is continuously deposited on the substrate 10.

第1の有機蒸着室30Rの後段には、第2の搬送室32と第2の微調室32aが隣接して設けられている。
この第2の微調室32aは、第2の第2の搬送室32から受け渡されたマスク付き基板12に対し、マスク11の位置を、次に行う有機材料の蒸着位置に対応してずらす機能を有している。
A second transfer chamber 32 and a second fine adjustment chamber 32a are provided adjacent to each other at the subsequent stage of the first organic vapor deposition chamber 30R.
The second fine adjustment chamber 32a has a function of shifting the position of the mask 11 with respect to the substrate 12 with the mask delivered from the second second transfer chamber 32 in accordance with the next deposition position of the organic material. have.

そして、第2の搬送室32の後段には、第2の有機蒸着室30Gが設けられている。   A second organic vapor deposition chamber 30 </ b> G is provided downstream of the second transfer chamber 32.

この第2の有機蒸着室30Gは、第2の搬送室32から受け渡されたマスク付き基板12を搬送しつつ、例えば緑色発光用の第2の有機材料を基板10上に連続的に蒸着するように構成されている。   The second organic deposition chamber 30G continuously deposits, for example, a second organic material for green light emission on the substrate 10 while transporting the masked substrate 12 delivered from the second transport chamber 32. It is configured as follows.

第2の有機蒸着室30Gの後段には、第3の搬送室33と第3の微調室33aが隣接して設けられている。
この第3の微調室33aは、第3の第3の搬送室32から受け渡されたマスク付き基板10に対し、マスク11の位置を、次に行う有機材料の蒸着位置に対応してずらす機能を有している。
A third transfer chamber 33 and a third fine tuning chamber 33a are provided adjacent to each other at the subsequent stage of the second organic vapor deposition chamber 30G.
The third fine-tuning chamber 33a has a function of shifting the position of the mask 11 with respect to the substrate 10 with the mask delivered from the third third transfer chamber 32 in accordance with the next deposition position of the organic material. have.

そして、第3の搬送室33の後段には、第3の有機蒸着室30Bが設けられている。
この第3の有機蒸着室30Bは、第3の搬送室33から受け渡されたマスク付き基板12を搬送しつつ、例えば青色発光用の第3の有機材料を基板10上に連続的に蒸着するように構成されている。
A third organic vapor deposition chamber 30 </ b> B is provided at the subsequent stage of the third transfer chamber 33.
The third organic deposition chamber 30B continuously deposits, for example, a third organic material for blue light emission on the substrate 10 while transporting the masked substrate 12 delivered from the third transport chamber 33. It is configured as follows.

そして、第3の有機蒸着室30Bの後段には、第4の搬送室34が設けられ、さらに、この第4の搬送室34の後段には、マスク取り外し室35とマスク搬出室36が隣接して設けられている。
また、マスク取り外し室35の後段には、図示しない後処理工程部に基板10を搬送するための基板搬送室37が設けられている。
A fourth transfer chamber 34 is provided downstream of the third organic vapor deposition chamber 30 </ b> B, and a mask removal chamber 35 and a mask carry-out chamber 36 are adjacent to the subsequent stage of the fourth transfer chamber 34. Is provided.
Further, a substrate transfer chamber 37 for transferring the substrate 10 to a post-processing step section (not shown) is provided at the subsequent stage of the mask removal chamber 35.

このような構成を有する本実施の形態において基板10上に有機層を形成する際には、まず、図2(a)に示すように、基板仕込室21を介して基板搬送室20内に搬入された基板10を、ベーク室22に搬入して真空中で加熱を行った後、冷却室23において真空中で基板10を冷却する。   When the organic layer is formed on the substrate 10 in the present embodiment having such a configuration, first, as shown in FIG. 2A, the organic layer is carried into the substrate transfer chamber 20 via the substrate preparation chamber 21. The carried substrate 10 is carried into the baking chamber 22 and heated in a vacuum, and then the substrate 10 is cooled in the cooling chamber 23 in a vacuum.

そして、前処理室24において基板10に対して真空プラズマ処理を行い、さらに、図2(b)に示すように、このプラズマ処理によって加熱された基板10を再び冷却室23に搬入して真空中で冷却する。
さらに、この基板10とマスク11を第1の微調室26に移送し、これら基板10とマスク11を位置合わせをして組み付ける。
Then, a vacuum plasma treatment is performed on the substrate 10 in the pretreatment chamber 24. Further, as shown in FIG. 2B, the substrate 10 heated by this plasma treatment is again carried into the cooling chamber 23 and is in a vacuum. Cool with.
Further, the substrate 10 and the mask 11 are transferred to the first fine adjustment chamber 26, and the substrate 10 and the mask 11 are aligned and assembled.

そして、第1の有機層蒸着室30Rにおいて、基板10上にホール輸送層及び第1の有機材料層を形成した後、図1に示すように、順次、マスク付き基板12を第2〜第3の有機層蒸着室30G、30Bに移送し、マスク11の位置をずらしながら各色の有機材料の蒸着を行う。   Then, after forming the hole transport layer and the first organic material layer on the substrate 10 in the first organic layer deposition chamber 30R, as shown in FIG. The organic layer deposition chambers 30 </ b> G and 30 </ b> B are transported to deposit the organic material of each color while shifting the position of the mask 11.

以上述べたように本実施の形態にあっては、前処理工程の際に真空中で基板10を冷却することから、基板10の汚染の問題は発生せず、しかも短時間で冷却処理を行うことができる。   As described above, in the present embodiment, since the substrate 10 is cooled in a vacuum during the pretreatment process, the problem of contamination of the substrate 10 does not occur and the cooling process is performed in a short time. be able to.

また、冷却工程の終了後、基板10に対してマスク11の位置合わせを行い、さらに、このマスク11を介してホール輸送層及び有機発光層の形成を行うことから、前処理工程後における基板10の熱膨張を阻止することができ、これにより基板10とマスク11との正確な位置合わせを行って精細な有機発光層を形成することが可能になる。   In addition, after the cooling process is completed, the mask 11 is aligned with the substrate 10, and further, the hole transport layer and the organic light emitting layer are formed through the mask 11. Thus, it is possible to form a fine organic light emitting layer by accurately aligning the substrate 10 and the mask 11.

さらに、本実施の形態では、加熱工程及び真空プラズマ処理工程の後にそれぞれ基板10を冷却することから、基板10の温度を常に一定に保持することができ、これにより基板10とマスク11との位置合わせをより正確に行うことができる。   Furthermore, in this embodiment, since the substrate 10 is cooled after the heating step and the vacuum plasma processing step, respectively, the temperature of the substrate 10 can be kept constant, whereby the position of the substrate 10 and the mask 11 can be maintained. Matching can be performed more accurately.

そして、本実施の形態の有機EL素子製造装置1によれば、有機層形成の前に基板10とマスク11との正確な位置合わせを行って精細な有機発光層を効率良く形成可能な有機EL素子製造装置を提供することができる。   And according to the organic EL element manufacturing apparatus 1 of this Embodiment, the organic EL which can form a fine organic light emitting layer efficiently by performing exact alignment with the board | substrate 10 and the mask 11 before organic layer formation. An element manufacturing apparatus can be provided.

図3は、本発明に係る有機EL素子製造装置の第2の実施の形態を示す概略構成図である。   FIG. 3 is a schematic configuration diagram showing a second embodiment of the organic EL element manufacturing apparatus according to the present invention.

図3に示すように、本実施の形態の有機EL素子製造装置100は、第1〜第4の基板搬送室100、110、120、130が、それぞれ受け渡し室140、150、160を介して連結され、順次、基板200に対して所定の処理を行い搬送するように構成されている。   As shown in FIG. 3, in the organic EL element manufacturing apparatus 100 of the present embodiment, the first to fourth substrate transfer chambers 100, 110, 120, and 130 are connected via transfer chambers 140, 150, and 160, respectively. Then, the substrate 200 is sequentially subjected to a predetermined process and conveyed.

ここで、第1〜第3の基板搬送室100、110、120の周囲に設けられた後述する各室は、図示しない真空排気系に接続され、真空雰囲気下で図示しない搬送ロボットを用いて基板200の受け渡しを行うように構成されている。   Here, each chamber, which will be described later, provided around the first to third substrate transfer chambers 100, 110, 120 is connected to a vacuum exhaust system (not shown), and a substrate is used in a vacuum atmosphere using a transfer robot (not shown). It is configured to perform 200 delivery.

第1の基板搬送室100の周囲には、上記実施の形態と同様の処理を行う基板仕込室102、第1及び第2のベーク室103,104、冷却室105と、紫外線照射によってクリーニング処理を行うUVクリーニング室106が配設されている。   Around the first substrate transfer chamber 100, a substrate preparation chamber 102 for performing the same processing as in the above embodiment, first and second baking chambers 103 and 104, a cooling chamber 105, and a cleaning process by ultraviolet irradiation. A UV cleaning chamber 106 is provided.

第2の基板搬送室110の周囲には、上記実施の形態と同様の処理を行う冷却室111、前処理室112、ホール層蒸着室113、第1及び第2の有機層蒸着室114、115と、マスク201をストックしておくマスクストック室116が配設されている。   Around the second substrate transfer chamber 110, a cooling chamber 111, a pretreatment chamber 112, a hole layer deposition chamber 113, and first and second organic layer deposition chambers 114 and 115 that perform the same processing as in the above embodiment. A mask stock chamber 116 for stocking the mask 201 is provided.

第3の基板搬送室120の周囲には、上記実施の形態と同様の処理を行う第3の有機層蒸着室121、電極形成室122〜124と、マスク201をストックしておくマスクストック室125が配設されている。   Around the third substrate transfer chamber 120, a third organic layer deposition chamber 121, electrode formation chambers 122 to 124 that perform the same processing as in the above embodiment, and a mask stock chamber 125 in which the mask 201 is stocked. Is arranged.

本実施の形態の場合は、ホール層蒸着室113、第1〜第3の有機層蒸着室114〜116に、基板200とマスク201を位置合わせするためのアライメント機構(図示せず)が設けられ、位置合わせ室を兼用するようになっている。   In the case of the present embodiment, an alignment mechanism (not shown) for aligning the substrate 200 and the mask 201 is provided in the hole layer deposition chamber 113 and the first to third organic layer deposition chambers 114 to 116. It is designed to be used as an alignment chamber.

第4の基板搬送室130の周囲には、封止工程を行うための各処理室、すなわち、レジン塗布室131、乾燥剤貼り付け室132、封止ガラスUVクリーニング室133、貼り合わせ室134と、デバイスを取り出すデバイス取出室135が配設されている。   Around the fourth substrate transfer chamber 130, there are processing chambers for performing a sealing process, that is, a resin coating chamber 131, a desiccant pasting chamber 132, a sealing glass UV cleaning chamber 133, and a bonding chamber 134. A device take-out chamber 135 for taking out the device is provided.

このような構成を有する本実施の形態において基板200上に有機層を形成する際には、上記実施の形態と同様に、まず基板仕込室102を介して基板搬送室100内に搬入された基板200を、第1及び第2のベーク室103,104に搬入して真空中で加熱を行った後、冷却室105において真空中で基板200を冷却する。   When the organic layer is formed on the substrate 200 in the present embodiment having such a configuration, the substrate first loaded into the substrate transfer chamber 100 via the substrate preparation chamber 102 as in the above embodiment. 200 is carried into the first and second baking chambers 103 and 104 and heated in vacuum, and then the substrate 200 is cooled in vacuum in the cooling chamber 105.

次に、基板200をUVクリーニング室106に搬送してUVクリーニングを行い、このUVクリーニングによって加熱された基板200を冷却室105に搬入して冷却を行う。   Next, the substrate 200 is transported to the UV cleaning chamber 106 to perform UV cleaning, and the substrate 200 heated by this UV cleaning is carried into the cooling chamber 105 to be cooled.

そして、基板200を前処理室111に搬送して基板200に対して真空プラズマ処理を行い、さらに、このプラズマ処理によって加熱された基板200を冷却室112に搬入して真空中で冷却する。   Then, the substrate 200 is transported to the pretreatment chamber 111 and vacuum plasma treatment is performed on the substrate 200. Further, the substrate 200 heated by the plasma treatment is carried into the cooling chamber 112 and cooled in vacuum.

さらに、ホール層蒸着室113において基板200とマスク201の位置合わせをし、基板200上にホール輸送層を形成する。   Further, the substrate 200 and the mask 201 are aligned in the hole layer deposition chamber 113, and a hole transport layer is formed on the substrate 200.

その後、順次、第1〜第3の有機層蒸着室114、115、121に移送し、マスク201の位置をずらしながら各色の有機材料の蒸着を行う。   After that, the materials are sequentially transferred to the first to third organic layer deposition chambers 114, 115, and 121, and the organic material of each color is deposited while shifting the position of the mask 201.

以上述べたように本実施の形態においても、前処理工程の際に真空中で基板200を冷却することから、基板200の汚染の問題は発生せず、しかも短時間で冷却処理を行うことができる。   As described above, also in this embodiment, since the substrate 200 is cooled in a vacuum during the pretreatment process, the problem of contamination of the substrate 200 does not occur, and the cooling process can be performed in a short time. it can.

また、冷却工程の終了後、基板200に対してマスク201の位置合わせを行い、さらに、このマスク201を介してホール輸送層及び有機発光層の形成を行うことから、前処理工程後における基板200の膨張を阻止することができ、これにより基板200とマスク201との正確な位置合わせを行って精細な有機発光層を形成することが可能になる。   In addition, after the cooling process is completed, the mask 201 is aligned with the substrate 200, and further, the hole transport layer and the organic light emitting layer are formed through the mask 201. Therefore, the substrate 200 after the pretreatment process is formed. Thus, it is possible to form a fine organic light emitting layer by accurately aligning the substrate 200 and the mask 201.

さらに、本実施の形態においても、加熱工程及び真空プラズマ処理工程の後にそれぞれ基板200を冷却することから、基板200の温度を常に一定に保持することができ、これにより基板200とマスク201との位置合わせをより正確に行うことができる。   Furthermore, also in this embodiment, since the substrate 200 is cooled after the heating step and the vacuum plasma processing step, the temperature of the substrate 200 can be kept constant, whereby the substrate 200 and the mask 201 can be kept constant. The alignment can be performed more accurately.

そして、本実施の形態の有機EL素子製造装置100によれば、有機層形成の前に基板200とマスク201との正確な位置合わせを行って精細な有機発光層を効率良く形成可能な有機EL素子製造装置を提供することができる。   And according to the organic EL element manufacturing apparatus 100 of this Embodiment, the organic EL which can form a precise | minute organic light emitting layer efficiently by performing exact alignment with the board | substrate 200 and the mask 201 before organic layer formation. An element manufacturing apparatus can be provided.

なお、本発明は上述の実施の形態に限られることなく、種々の変更を行うことができる。
例えば、上述の実施の形態においては、基板上に光の3原色の有機層を形成する場合を例にとって説明したが、本発明はこれに限られず、例えば単色の有機層を形成する場合に適用することも可能である。
The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, the case where the organic layers of the three primary colors of light are formed on the substrate has been described as an example. However, the present invention is not limited to this, and is applied to the case where, for example, a monochromatic organic layer is formed. It is also possible to do.

本発明に係る有機EL素子製造装置の第1の実施の形態を示す概略構成図1 is a schematic configuration diagram showing a first embodiment of an organic EL element manufacturing apparatus according to the present invention. (a):同実施の形態における前処理部の処理手順を示す概略構成図(その1) (b):同実施の形態における前処理部の処理手順を示す概略構成図(その2)(A): Schematic configuration diagram showing the processing procedure of the preprocessing unit in the embodiment (part 1) (b): Schematic configuration diagram showing the processing procedure of the preprocessing unit in the embodiment (part 2) 本発明に係る有機EL素子製造装置の第2の実施の形態を示す概略構成図The schematic block diagram which shows 2nd Embodiment of the organic EL element manufacturing apparatus which concerns on this invention

符号の説明Explanation of symbols

1…有機EL素子製造装置 2…前処理部 3…有機発光層形成部(有機層形成部) 10…基板 11…成膜用マスク 12…マスク付き基板 22…ベーク室(基板加熱室、加熱処理室) 23…冷却室 24…前処理室(基板加熱室) 26…第1の微調室(位置合わせ室) DESCRIPTION OF SYMBOLS 1 ... Organic EL element manufacturing apparatus 2 ... Pre-processing part 3 ... Organic light emitting layer formation part (organic layer formation part) 10 ... Substrate 11 ... Mask for film formation 12 ... Substrate with a mask 22 ... Bake chamber (substrate heating chamber, heat treatment) 23) Cooling chamber 24 ... Pretreatment chamber (substrate heating chamber) 26 ... First fine tuning chamber (alignment chamber)

Claims (5)

基板に対する前処理工程を有する有機EL素子製造方法であって、
前記前処理工程は、真空中で前記基板を加熱及び冷却する工程を有し、
当該冷却工程の終了後、当該基板に対して成膜用マスクの位置合わせを行い、さらに、前記成膜用マスクを介して有機層の形成を行う工程を有する有機EL素子製造方法。
An organic EL element manufacturing method having a pretreatment process for a substrate,
The pretreatment step includes a step of heating and cooling the substrate in a vacuum,
An organic EL element manufacturing method including a step of aligning a film formation mask with respect to the substrate after the cooling step and further forming an organic layer through the film formation mask.
前記有機層の形成を行う工程は、当該基板上にホール輸送層を形成する工程と、少なくとも1色の有機発光層の形成を行う工程を有する請求項1記載の有機EL素子製造方法。   The organic EL device manufacturing method according to claim 1, wherein the step of forming the organic layer includes a step of forming a hole transport layer on the substrate and a step of forming an organic light emitting layer of at least one color. 前記冷却工程を複数回行う請求項1又は2のいずれか1項記載の有機EL素子製造方法。   The organic EL element manufacturing method according to claim 1, wherein the cooling step is performed a plurality of times. 基板に対する処理の際に当該基板が加熱される基板加熱室と、前記基板を冷却する冷却室と、前記基板に対して成膜用マスクの位置合わせを行う位置合わせ室とが、真空雰囲気下で互いに基板の受け渡しを行うように構成され、
前記位置合わせ室の後段に設けられ、前記基板に対して有機層の形成を行う有機層形成部を備えた有機EL素子製造装置。
A substrate heating chamber in which the substrate is heated during processing on the substrate, a cooling chamber for cooling the substrate, and an alignment chamber for aligning the deposition mask with respect to the substrate are in a vacuum atmosphere. It is configured to transfer substrates to each other,
An organic EL element manufacturing apparatus provided with an organic layer forming unit that is provided in a subsequent stage of the alignment chamber and forms an organic layer on the substrate.
前記基板加熱室は、前記基板を加熱処理を行う加熱処理室と、前記基板に対してラジカルソースを用いて前処理を行う前処理室とを有する請求項4記載の有機EL素子製造装置。   The organic EL element manufacturing apparatus according to claim 4, wherein the substrate heating chamber includes a heat treatment chamber for performing heat treatment on the substrate, and a pretreatment chamber for performing pretreatment on the substrate using a radical source.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135667A1 (en) * 2010-04-27 2011-11-03 株式会社シンクロン Process for production of semiconductor light-emitting element substrate
JP2012031490A (en) * 2010-08-02 2012-02-16 Ulvac Japan Ltd Plasma treatment apparatus, and pre-treatment method
WO2012050081A1 (en) * 2010-10-12 2012-04-19 株式会社カネカ Manufacturing device for organic el elements
US8313806B2 (en) 2007-07-12 2012-11-20 Hitachi Displays, Ltd. Vapor deposition method and apparatus
JP2019203175A (en) * 2018-05-24 2019-11-28 キヤノントッキ株式会社 Film deposition apparatus, film deposition method and manufacturing method of electronic device
JP2021098885A (en) * 2019-12-23 2021-07-01 キヤノントッキ株式会社 Film deposition device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102054910B (en) * 2010-11-19 2013-07-31 理想能源设备(上海)有限公司 LED chip process integration system and treating method thereof
CN111490185A (en) * 2013-12-26 2020-08-04 科迪华公司 Thermal processing of electronic devices
KR102300039B1 (en) 2014-08-04 2021-09-10 삼성디스플레이 주식회사 Apparatus for manufacturing display apparatus and method of manufacturing display apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001072091A1 (en) * 2000-03-22 2001-09-27 Idemitsu Kosan Co., Ltd. Method and apparatus for manufacturing organic el display
JP2003208977A (en) * 2002-01-11 2003-07-25 Seiko Epson Corp Manufacturing method of organic el device and its equipment, electrooptic equipment, and electronic device
JP2004079528A (en) * 2002-08-01 2004-03-11 Semiconductor Energy Lab Co Ltd Manufacturing apparatus
JP2004171862A (en) * 2002-11-19 2004-06-17 Seiko Epson Corp Manufacturing device of organic el device, manufacturing method of organic el device, organic el device and electronic equipment
WO2004064453A1 (en) * 2003-01-10 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and process for preparing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001072091A1 (en) * 2000-03-22 2001-09-27 Idemitsu Kosan Co., Ltd. Method and apparatus for manufacturing organic el display
JP2003208977A (en) * 2002-01-11 2003-07-25 Seiko Epson Corp Manufacturing method of organic el device and its equipment, electrooptic equipment, and electronic device
JP2004079528A (en) * 2002-08-01 2004-03-11 Semiconductor Energy Lab Co Ltd Manufacturing apparatus
JP2004171862A (en) * 2002-11-19 2004-06-17 Seiko Epson Corp Manufacturing device of organic el device, manufacturing method of organic el device, organic el device and electronic equipment
WO2004064453A1 (en) * 2003-01-10 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and process for preparing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8313806B2 (en) 2007-07-12 2012-11-20 Hitachi Displays, Ltd. Vapor deposition method and apparatus
WO2011135667A1 (en) * 2010-04-27 2011-11-03 株式会社シンクロン Process for production of semiconductor light-emitting element substrate
JP2012031490A (en) * 2010-08-02 2012-02-16 Ulvac Japan Ltd Plasma treatment apparatus, and pre-treatment method
WO2012050081A1 (en) * 2010-10-12 2012-04-19 株式会社カネカ Manufacturing device for organic el elements
JP5843779B2 (en) * 2010-10-12 2016-01-13 株式会社カネカ Organic EL device manufacturing equipment
JP2019203175A (en) * 2018-05-24 2019-11-28 キヤノントッキ株式会社 Film deposition apparatus, film deposition method and manufacturing method of electronic device
JP2021098885A (en) * 2019-12-23 2021-07-01 キヤノントッキ株式会社 Film deposition device
CN113088871A (en) * 2019-12-23 2021-07-09 佳能特机株式会社 Film forming apparatus

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