JP2006133387A - Rocking body apparatus and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a rocking body apparatus in which the engagement alignment between movable comb-shaped structure bodies and fixed comb-shaped structure bodies are comparatively easily attained. <P>SOLUTION: The rocking body apparatus is composed of: a movable plate 105; a journal part 104 which pivotally supports the movable plate 105 with respect to a supporting base 107; movable comb-shaped structure bodies 108 and 109 extended from the movable plate 105; the fixed comb-shaped structure bodies 110 to 113 which are arranged at positions at which engaged with the movable comb-shaped structure bodies 108 and 109 with spaces; and an electrostatic driving means which rocks and displaces the movable plate 105 by applying electrostatic force between the movable comb-shaped structure bodies 108 and 109 and the fixed comb-shaped structure bodies 110 to 113. The movable comb-shaped structure bodies 108 and 109 are composed of a first movable comb-shaped layer 108 and a second comb-shaped layer 109 which are mutually connected by a connection layer 103, and the fixed comb-shaped structure bodies 110 to 113 are composed of a first fixed comb-shaped layers 110 and 111 and second fixed comb-shaped layers 112 and 113 which are mutually connected by an electrically separated insulation layer 103. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to an oscillating device such as a small actuator in which a movable plate oscillates, a manufacturing method thereof, and the like.

An oscillating device such as an actuator in which a movable plate oscillates is used for, for example, a purpose of deflecting laser light. Conventionally, there is a galvanometer mirror as a scanning mirror for deflecting and scanning a laser beam. The driving principle of the galvanometer mirror is as follows. When a current is passed through a moving coil arranged in a magnetic field, an electromagnetic force is generated in relation to the current and the magnetic flux, and a torque proportional to the current is generated. Then, the movable coil rotates to an angle at which the torque and the spring force are balanced, and the presence or absence or magnitude of the current is detected by swinging the pointer through the movable coil. The galvanometer mirror uses the principle of such a galvanometer, and is configured by providing a reflecting mirror instead of the pointer on an axis that rotates integrally with the movable coil.

However, the galvanometer mirror requires a mechanically wound drive coil and a large yoke for generating a magnetic field, and there is a limit to downsizing these mechanical elements mainly due to the output torque. At the same time, the size of the entire device for deflecting the light has been increased due to the space for assembling the constituent members.

As a small-sized optical deflector, there is an optical deflector manufactured using a micromachining technique in which a micromachine is integrally formed on a semiconductor substrate by applying a semiconductor manufacturing technique. For example, K.E.Petersen et al. Has proposed a Torsional Scanning Mirror formed of silicon (see Non-Patent Document 1). In this optical deflector, as shown in FIG. 12, the mechanically movable portion is composed of a mirror as an optical deflector and a beam supporting the mirror, and a drive voltage is applied between the mirror and a fixed electrode formed on the substrate. By the electrostatic attractive force generated in this way, a torsional moment is given to the beam to rotate it, and the deflection angle of the mirror is changed. The maximum deflection angle of the mirror part is uniquely determined by the gap interval t0 between the mirror part and the substrate. In general, in an optical deflector, the larger the deflection angle, the better, and this requires a large gap interval. However, if the gap interval is increased, the distance between the fixed electrode and the mirror portion increases, and the drive voltage significantly increases. On the contrary, in order to reduce the voltage, it is necessary to shorten the gap interval and suppress the deflection angle of the mirror portion. Thus, the reduction of the drive voltage and the increase of the deflection angle are contradictory requirements.

On the other hand, as another small optical deflector, as shown in FIG. 13, a movable comb-shaped electrode is formed on a movable mirror (movable plate), and fixed comb-shaped so as to be engaged with this at an interval. There is one in which electrodes are arranged vertically and an electrostatic attractive force is generated between the movable comb electrode and the fixed comb electrode so as to attract the upper and lower sides to deflect the movable mirror (see Patent Document 1). In the optical deflector having this configuration, the distance between the electrodes can be made narrow, so that the drive voltage can be lowered. Moreover, since it is possible to suppress displacements (vertical and horizontal displacements) other than in the twisting direction with respect to the torsion bar, axial displacement can be reduced. In non-resonant driving, softening the torsion bar is important in driving at a low voltage, but in this configuration, an electrostatic attractive force that attracts the top and bottom is generated, so the torsion bar is softened. Is possible.
IBM J.RES.DEVELOP., VOL.24, NO5,9,1980.P631-637 JP-A-2003-241134

Such alignment between the movable comb electrode and the fixed comb electrode needs to be performed with very high accuracy. However, in the above configuration, the movable comb-shaped electrode formed on the mirror (movable plate) and the fixed comb-shaped electrodes disposed above and below it are formed separately, so that they are formed on individual substrates. The alignment between the comb electrodes is considerably difficult, and the production cost is accordingly increased.

In view of the above problems, the oscillator device of the present invention includes a movable plate, at least one shaft support portion such as a torsion bar that pivotably supports the movable plate with respect to the support substrate, and movable comb teeth extending from the movable plate. An electrostatic force between the movable comb-like structure, the fixed comb-like structure disposed at a position where the movable comb-like structure is engaged with the movable comb-like structure, and the movable comb-like structure and the fixed comb-like structure. The movable comb-like structure is composed of a first movable comb layer and a second movable comb layer that are joined to each other by a connection layer. The fixed comb-like structure is composed of a first fixed comb-tooth layer and a second fixed comb-tooth layer that are joined together by an insulating layer that is electrically separated from each other.

Typically, the shaft support portion is a torsion bar, and the first movable comb-like structure and the second movable comb-like structure extend in a direction substantially perpendicular to the extending direction of the torsion bar. The support is pivotally supported so that the movable plate can swing in the form of a cantilever type, and the movable comb-like structure from the end of the movable plate on the side opposite to the side where the shaft support is located A form extending in a direction substantially parallel to the extending direction is also possible.

In view of the above problems, the method of manufacturing the oscillator device according to the present invention separates the movable comb-like structure and the fixed comb-like structure from a silicon wafer in which two silicon layers are bonded via an insulating layer. Forming a movable plate, a shaft support, a movable comb-like structure, and a fixed comb-like structure while performing alignment for meshing with a mask formed on the surface of the silicon wafer by photolithography and etching. Characterize

Further, in view of the above problems, the optical deflector of the present invention is characterized in that a reflecting mirror is formed on the movable plate of the oscillator device, and the image display apparatus and image formation of the present invention are characterized in that An optical apparatus such as an apparatus includes the optical deflector and a light source that emits light incident on the optical deflector.

According to the oscillator device of the present invention having the above-described configuration, the movable comb-shaped structure and the fixed comb-shaped structure can be manufactured relatively easily because the manufacturing method of the present invention as described above can be used. Can be arranged at positions that engage with each other. That is, an assembly process requiring alignment accuracy required when the movable comb-like structure and the fixed comb-like structure are formed on separate substrates is not necessary.

Hereinafter, the present invention will be described in detail using specific examples.
(First embodiment)
A first embodiment of the present invention relating to an actuator or oscillator device will be described with reference to FIGS. 1 to 5 and FIG. 1 is a top view showing the configuration of the present embodiment, FIG. 2 is a cross-sectional view showing the configuration of the oscillator device, FIG. 3 is a cross-sectional view illustrating a method for driving the oscillator device, and FIGS. It is sectional drawing explaining the manufacturing process of the movable comb-tooth-like structure of a present Example, and a fixed comb-tooth-like structure.

As shown in FIGS. 1 and 2, the oscillator device of the present embodiment includes a movable plate 105, two torsion bars 104 that pivotally support the movable plate 105 with respect to the support substrate 107, and a movable plate. The movable comb-like structures 108 and 109 extending in the direction substantially orthogonal to the extending direction of the torsion bar 104 from both edges of the torsion bar 104 are aligned with the positions where the movable comb-like structures 108 and 109 mesh with each other. The fixed comb-like structures 110 to 113 to be arranged (here, being in mesh with each other means that, as shown in FIG. 1, both walls of the concave portion extending in the substantially orthogonal direction of one comb-like structure. The movable comb-like structures 108, 109 and the fixed comb-like structure 110. Possible to work electrostatic force between ~ 113 Electrostatic driving means for swinging and displacing the plate 105 (not shown except for the contact pads 114 to 118 for wiring the movable comb-like structures 108 and 109 and the fixed comb-like structures 110 to 113) Prepare. The movable comb-like structure is composed of a first movable comb-teeth layer 108 and a second movable comb-teeth layer 109 joined by a connection layer 103, and the fixed comb-like structure is electrically separated. In the state where the movable plate 105 does not oscillate, the connecting layer 103 and the insulating layer 103 are formed by the first fixed comb tooth layers 110 and 111 and the second fixed comb tooth layers 112 and 113 joined by the insulating layer 103. Are movable in the same plane and movable comb-like structures 108 in the thickness direction perpendicular to the connection layer 103 and the insulating layer 103 so that the movable plate 105 having a sufficiently large displacement angle can swing. The thickness 109 is set smaller than the thickness of the fixed comb-like structures 110 to 113. Here, if a reflecting mirror is formed on the movable plate 105, it is configured as an optical deflector.

In this embodiment, an SOI substrate including first and second silicon layers 101 and 102 having a thickness of 100 μm and an insulating layer 103 sandwiched between silicon layers having a thickness of 0.4 μm is used. The torsion bar 104 lies on a straight line passing through the center of the movable plate 105 and is positioned so as to support the center of gravity of the movable plate 105 on both sides. The torsion bar 104 is fixed to the support substrate 107 by a fixed end 106. Although there are two torsion bars 104 in this embodiment, there may be one. The first movable comb tooth layer 108, the second movable comb tooth layer 109, the first fixed comb tooth layers 110, 111, and the second fixed comb tooth layers 112, 113 have the same shape and the insulating layer 103. They are arranged in symmetrical positions. In this configuration, the connection layer 103 between the first movable comb tooth layer 108 and the second movable comb tooth layer 109 is also the insulating layer 103.

In this embodiment, the movable comb-like structures 108 and 109 formed of the first and second movable comb layers joined by the connection layer 103 are formed at positions on both sides symmetrical with respect to the torsion bar 104. However, a structure formed only on one side is also possible. The torsion bar 104, the movable plate 105, the first movable comb tooth layer 108, and the first fixed comb tooth layers 110 and 111 can be integrally formed by removing the first silicon layer 101.

On the first movable comb layer 108, a second movable comb layer 109 extends in a direction substantially orthogonal to the torsion bar 104 via the insulating layer 103. 109 can be integrally formed with the second fixed comb tooth layers 112 and 113 by removing the second silicon layer 102. The second movable comb layer 109 is a metal thin film layer (not shown) and is electrically connected to the movable plate 105. As the metal thin film layer, for example, aluminum formed by vapor deposition may be used. For example, when the actuator of this embodiment is used as an optical deflector, the metal thin film layer functions as a reflecting mirror on the movable plate 105. Can also serve.

As described above, the first fixed comb-tooth layers 110 and 111 are formed by removing the first silicon layer 101 and mesh with the movable comb-like structures 108 and 109 while being spaced apart from each other. Placed in position. The second fixed comb-tooth layers 112 and 113 are also formed by removing the second silicon layer 102, and are disposed at positions where the movable comb-like structures 108 and 109 are separated from each other when they are tilted. Is done. Of course, the movable comb-like structures 108 and 109 and the fixed comb-like structures 110 to 113 are electrically insulated. The fixed comb-like structures 110 to 113 are electrically insulated from each other by the insulating layer 103.

The support substrate 107 can be a Pyrex (registered trademark) glass substrate, and the SOI substrate can be fixed by anodic bonding to the Pyrex glass substrate 107 on the second silicon layer 102 side. On the Pyrex glass substrate 107, wiring for applying a voltage to the movable comb-like structure and the fixed comb-like structure, and contact pads 114 to 118 are formed, and by providing the through-hole 119, the movable plate 105 The movable plate 105 and the Pyrex glass substrate 107 do not interfere with each other when the angle is displaced.

In the oscillator device having this configuration, the movable plate 105 and the second movable comb tooth layer 109 are connected by the metal thin film layer, and the movable plate 105 and the first movable comb tooth layer 108 are connected to the first silicon layer 101. Therefore, as described above, the first movable comb layer 108 and the second movable comb layer 109 are electrically connected. Therefore, as shown in FIG. 3, a positive bias voltage is applied to the first fixed comb layer 110 and the second fixed comb layer 113, so that the first fixed comb layer 111 and the second fixed comb layer are applied. When a negative bias voltage is applied to 112 and a sawtooth wave driving voltage as shown in FIG. 9 is applied to the movable comb-like structures (first and second movable comb layers 108 and 109), for example, FIG. As shown in FIG. 3, the movable comb-like structure is alternately attracted to the fixed comb-like structures 110 and 113, 111 and 112 by electrostatic attraction, and the response waveform of the displacement angle of the movable plate 105 is also the applied voltage waveform. (Saw states 1 to 3 in FIGS. 3A, 3B, and 3C coincide with states 1 to 3 in FIG. 9B). As a result, the movable plate 105 swings around the torsion bar 104 as a rotation axis.

At this time, the movable comb-like structure (first and second movable comb layers 108 and 109) and the fixed comb-like structure (first fixed comb layers 110 and 111 and the second fixed comb layer). 112 and 113) are precisely aligned so that they are engaged with each other at a distance, so that a swinging motion in which both are engaged deeply is possible. FIG. 3 shows the state of this swinging motion. However, a gap is formed in the thickness direction between the first fixed comb-tooth layers 110 and 111 and the second fixed comb-tooth layers 112 and 113 so that the first movable comb-tooth layer 108 and the second The movable comb-tooth layer 109 can also swing so that the first fixed comb-tooth layers 110 and 111 or the second fixed comb-tooth layers 112 and 113 are shallowly engaged.

Bias voltage or drive voltage to movable comb-like structures (first and second movable comb layers 108 and 109), first fixed comb layers 110 and 111, and second fixed comb layers 112 and 113 The method of adding is not limited to the above-described method, and various methods are possible as long as the movable plate 105 having the torsion bar 104 as a rotation axis can be swung. Further, at least one set of the movable comb-like structures 108 and 109 and the fixed comb-like structures (the first fixed comb layers 110 and 111 and the second fixed comb layers 112 and 113) (for example, , A set of the first movable comb layer 108 and the first fixed comb layer 110 and a set of the second movable comb layer 109 and the second fixed comb layer 113) It can also serve as a capacitance detecting means for detecting the capacitance between them that changes with displacement. Thereby, the information of the displacement angle of the movable plate 105 can be detected, and the displacement angle of the movable plate 105 can be controlled with high accuracy by performing feedback control based on this angular displacement information. In this case, differential detection of a change in capacitance is also possible.

Here, an example of a manufacturing process of the first and second movable comb layers and the first and second fixed comb layers will be described with reference to FIGS. 4 and 5. For example, an SOI substrate having first and second silicon layers 501 and 502 each having a thickness of 100 μm and an insulating layer 503 made of an oxide film can be used. First, on the surface of the SOI substrate, first and second movable comb layer masks 504 made of an oxide film and first and second fixed comb layer masks 505 are formed by photolithography and etching. . The thickness of the mask 504 for the movable comb-like structure is 0.5 μm, and the thickness of the mask 505 for the fixed comb-like structure is 1.5 μm. A mask 506 made of an oxide film is formed on the back surface of the SOI substrate substantially corresponding to the first and second fixed comb layer masks 505. The mask 506 has a thickness of 1.5 μm. (Fig. 4 (1-a))

Next, the second silicon layer 502 is etched by 50 μm from the back surface in the thickness direction using ICP-RIE (FIG. 4 (1-b)). Thereby, the thickness of the second movable comb layer 109 is defined. Then, the mask 506 is removed (FIG. 4 (1-c)). Subsequently, a metal layer 507 is deposited on the back surface of the second silicon layer 502 in which the trench structure is formed (FIG. 4 (1-d)). For the metal layer 507, for example, aluminum can be used. Next, the first silicon layer 501 is etched 100 μm from the surface in the thickness direction using ICP-RIE (FIG. 4 (1-e)). Thus, the first fixed comb layers 110 and 111 are formed.

Next, the insulating layer 503 exposed in the step of FIG. 4 (1-e) is removed (FIG. 5 (1-f)). Then, the second silicon layer 502 is etched by 50 μm from the back surface in the thickness direction using ICP-RIE (FIG. 5 (1-g)). Thereby, the second movable comb layer 109 is formed, and the second fixed comb layers 112 and 113 are substantially formed. Subsequently, the mask 504 for the movable comb-like structure is removed (FIG. 5 (1-h)). As a removal method, high-speed atomic beam etching can be used. At this time, the thickness of the mask 505 made of the same oxide film also decreases, but the mask 504 can be removed while leaving the mask 505 by providing a difference in thickness before the removal. Next, in the step of FIG. 5 (1-h), the first silicon layer 501 exposed by removing the mask 504 and the second silicon layer 502 are etched by 50 μm in the thickness direction (FIG. 5 (1-). i)). By etching the first silicon layer 501, the first movable comb layer 108 is formed with a prescribed thickness. Further, the second fixed comb layers 112 and 113 are completely formed by etching the second silicon layer 502. The presence of the metal layer 507 contributes to these reliable formations.

Next, after removing the mask 505 and the metal layer 507, the SOI substrate and the Pyrex glass substrate 508 are anodic bonded (FIG. 5 (1-j)). The Pyrex glass substrate 508 is provided with a through hole. Thus, the movable comb-like structures (first and second movable comb layers 108 and 109), the first fixed comb layers 110 and 111, and the second fixed comb layers 112 and 113 are formed. In the above process, the movable plate 105, the torsion bar 104, and the fixed end 106 are also formed on the first silicon layer 501 in parallel by appropriate patterning and etching. Further, when a mirror is formed on the movable plate 105, it may be performed at the step of FIG. 5 (1-j).

In this manufacturing method, the alignment between the movable comb-like structure and the fixed comb-like structure is determined by the mask 504 and the mask 505 formed on the surface of the first silicon layer 501 by initial photolithography and etching. Therefore, alignment after the formation of the movable comb-like structure and the fixed comb-like structure is not required. That is, an assembly process that requires alignment accuracy required when the movable comb-like structure and the fixed comb-like structure are formed on separate substrates is not necessary, and production is facilitated. In addition, the movable comb-like structures 108 and 109 are sandwiched between the first and second fixed comb layers, and a potential can be applied so as to attract the movable comb-like structures up and down. As a result, it is possible to prevent the torsion bar from being displaced (left and right and up and down) other than torsion. Therefore, the torsion bar can be formed softly, and a large angular displacement can be generated in the movable plate at a low voltage. Further, since a large yoke or the like is not required, the structure can be reduced in size. Such a small oscillator device exhibits its advantages in configuring an optical deflector and an optical apparatus using the optical deflector.

(Second embodiment)
Next, the oscillator device of the second embodiment will be described with reference to FIGS. FIG. 6 is a top view showing the configuration of the present embodiment, FIG. 7 is a cross-sectional view of the oscillator device, and FIGS. 8 and 9 are diagrams for explaining a driving method of the oscillator device of this embodiment. For the production of the movable comb-like structure and the fixed comb-like structure, the same method as in the above-described example was used. The second embodiment is different from the first embodiment in that the movable comb-like structure is arranged at the edge of the movable plate (the edge in the direction substantially perpendicular to the extension direction of the torsion bar) as in the first embodiment. The movable comb-like structures are arranged close to the torsion bar on both sides thereof, and extended in a direction substantially perpendicular to the extending direction. Other points are substantially the same as the first embodiment.

Also in this embodiment, an SOI substrate including first and second silicon layers 601 and 602 having a thickness of 100 μm and an insulating layer 603 sandwiched between silicon layers having a thickness of 0.4 μm is used. The torsion bar 604 is arranged on a straight line passing through the center of the movable plate 605 and supports the center of gravity of the movable plate 605 on both sides. The movable plate 605 has a support portion 614 that is substantially parallel to the torsion bar 604. The torsion bar 604 is fixed to the Pyrex glass substrate 607 with a fixed end 606. The first movable comb tooth layer 608 and the second movable comb tooth layer 609, the first fixed comb tooth layers 610 and 611, and the second fixed comb tooth layers 612 and 613 have the same shape and the insulating layer 603. It is arrange | positioned in the symmetrical position on both sides.

The first movable comb layer 608 extends in a direction substantially orthogonal to the torsion bar 604 from the support portion 614 that is a part of the movable plate 605. The first movable comb layer 608 is disposed at symmetrical positions on both sides of the torsion bar 604. The torsion bar 604, the movable plate 605, and the first movable comb tooth layer 608 can be integrally formed by removing the first silicon layer 601. On the first movable comb layer 608, a second movable comb layer 609 extends in a direction substantially orthogonal to the torsion bar 604 via an insulating layer 603. The second movable comb layer 609 can be integrally formed by removing the second silicon layer 602. The second movable comb layer 609 is electrically connected to the movable plate 605 through a metal thin film layer (not shown).

The first fixed comb layers 610 and 611 are formed by removing the first silicon layer 601 and the movable comb-like structures (first and second movable comb layers 608 and 609) are inclined. It is arrange | positioned in the position which spaces apart and meshes with this. Further, the second fixed comb-tooth layers 612 and 613 are formed by removing the second silicon layer 602, and are disposed at positions where the movable comb-tooth structure is separated from and engaged with the movable comb-tooth structure. . Of course, there is no electrical connection between the movable comb-like structure and the fixed comb-like structure. Further, the first fixed comb tooth layers 610 and 611 and the second fixed comb tooth layers 612 and 613 are insulated from each other by the presence of the insulating layer 603.

The SOI substrate is fixed by anodic bonding to the Pyrex glass substrate 607 on the second silicon layer 602 side. On the Pyrex glass substrate 607, wiring for applying a voltage and contact pads 615 to 619 are formed. The first fixed comb layers 610 and 611 are electrically connected to contact pads 619 and 618 by wire bonding (not shown), respectively, and the second fixed comb layers 612 and 613 are electrically connected to contact pads 616 and 615, respectively. Connected. The Pyrex glass substrate 607 is provided with a through-hole 620 so that the movable plate 605 and the Pyrex glass substrate 607 do not interfere with each other when the movable plate 605 is angularly displaced.

Also in the actuator of this configuration, the movable plate 605 and the second movable comb tooth layer 609 are connected by a metal thin film layer, and the movable plate 605 and the first movable comb tooth layer 608 remove the first silicon layer 601. Since they are processed and integrally formed, the first movable comb layer 608 and the second movable comb layer 609 are electrically connected. Therefore, as shown in FIG. 8, a positive bias voltage is applied to the first fixed comb layer 610 and the second fixed comb layer 613, so that the first fixed comb layer 611 and the second fixed comb layer are formed. When a negative bias voltage is applied to 612 and, for example, a sawtooth wave driving voltage as shown in FIG. 9 is applied to the movable comb-like structures 608 and 609, the movable comb-like structure becomes a fixed comb-like structure. The bodies 610 and 613, 611 and 612 are alternately attracted by electrostatic attraction, and the response waveform of the displacement angle is a sawtooth wave similar to the applied voltage waveform (states 1 to 3 in FIG. 8 are the states of FIG. 9B). 1 to 3). As a result, the movable plate 605 swings around the torsion bar 604 as a rotation axis.

In this embodiment, the same effect as that of the first embodiment is obtained. As an effect peculiar to the present embodiment, when the oscillator device having this configuration is driven to resonate, the moment of inertia of the oscillator device can be made smaller than in the case where the movable comb teeth are formed on the edge of the movable plate. The speed of angular displacement of the movable plate can be increased. In non-resonant driving, since the moment of inertia can be reduced, the responsiveness to the driving waveform can be increased, and the response waveform of the displacement angle can be changed to a triangular wave having a rapidly changing portion. In addition, the movable comb-like structure is provided on a support that is a part of the movable plate, and the displacement angle of the movable plate and the displacement angle of the movable comb-like structure are approximately the same, The amount of change in the overlapping area between the movable comb-like structure and the fixed comb-like structure is large. As a result, the amount of change in the capacitance formed by the movable comb-shaped structure and the fixed comb-shaped structure per displacement angle is increased, and a large displacement angle can be generated at a low voltage. The same applies to the first embodiment.

(Third embodiment)
Next, an optical apparatus according to the third embodiment will be described. In the optical apparatus of this embodiment, an optical deflector using a metal thin film on the movable plate of the oscillator device described in the above embodiment as a reflecting mirror is used. FIG. 10 is a diagram illustrating an example of an image display device as an optical apparatus.

In FIG. 10, reference numeral 1101 denotes an optical deflector group in which two optical deflectors shown in FIG. 1 or the like are arranged so that the deflection directions are orthogonal to each other. In this case, light for raster scanning incident light in the horizontal and vertical directions. Used as a scanner device. Reference numeral 1102 denotes a laser light source. Reference numeral 1103 denotes a lens or a lens group, 1004 denotes a writing lens or lens group, and 1105 denotes a projection surface. Laser light emitted from the laser light source 1102 is subjected to predetermined intensity modulation related to the timing of optical scanning, and is scanned two-dimensionally by the optical deflector group 1101. The scanned laser light passes through the writing lens 1104 and forms an image on the projection surface 1105. Thereby, it is possible to realize an optical scanner device characterized by a large scanning angle, high productivity and low power consumption.

(Fourth embodiment)
FIG. 11 is a diagram showing a fourth embodiment in the case where an optical deflector using a metal thin film on a movable plate of the oscillator device shown in the above embodiment as a reflecting mirror is used in an image forming apparatus.

In FIG. 11, reference numeral 1201 denotes the optical deflector shown in FIG. 1 or the like, and in this case, it is used as an optical scanner device that scans incident light in one dimension. 1202 is a laser light source. 1203 is a lens or lens group, 1204 is a writing lens or lens group, and 1205 is a photoconductor. The laser light emitted from the laser light source 1202 is subjected to predetermined intensity modulation related to the timing of optical scanning, and is scanned one-dimensionally by the optical deflector 1201. The scanned laser light forms an image on the photoconductor 1205 by the writing lens 1204. The photoreceptor 1205 is uniformly charged by a charger (not shown), and an electrostatic latent image is formed by scanning light thereon. Then, a toner image is formed on the image portion of the electrostatic latent image by a developing device (not shown), and a visible image is formed on the paper by transferring and fixing the toner image on the paper (not shown), for example. As a result, an image forming apparatus characterized by a large scanning angle, high productivity and low power consumption can be realized.

It is a top view which shows the 1st Example of the oscillator device of this invention. It is sectional drawing which shows the 1st Example of the oscillator device of this invention. It is sectional drawing explaining the drive method of the 1st Example of the oscillator device of this invention. It is sectional drawing explaining the manufacturing method of the comb-tooth-like structure of the 1st Example of the rocking | fluctuation body apparatus of this invention. It is sectional drawing explaining the manufacturing method of the comb-tooth-like structure of the 1st Example of the rocking | fluctuation body apparatus of this invention. It is a top view which shows the 2nd Example of the oscillator device of this invention. It is sectional drawing which shows the 2nd Example of the oscillator device of this invention. It is sectional drawing explaining the drive method of the 2nd Example of the oscillator device of this invention. It is a figure which shows the applied voltage to the movable comb-tooth structure body of the rocking body apparatus of this invention, and the displacement angle change of a movable body. It is a figure which shows the image forming apparatus which concerns on the 3rd Example using the oscillator device of this invention as an optical deflector. It is a figure which shows the image forming apparatus which concerns on 4th Example using the oscillator device of this invention as an optical deflector. It is a figure which shows a prior art example. It is a figure which shows another prior art example.

Explanation of symbols

101, 501, 601 First silicon layer 102, 502, 602 Second silicon layer 103, 503, 603 Insulating layer 104, 604 Shaft support (torsion bar)
105, 605 Movable plate 107, 508, 607 Support substrate (glass substrate)
108,608 First movable comb layer (movable comb-like structure)
109,609 Second movable comb layer (movable comb-like structure)
110, 111, 610, 611 First fixed comb layer (fixed comb-like structure)
112, 113, 612, 613 Second fixed comb layer (fixed comb-like structure)
114-118, 615-619 Contact pad (electrostatic drive means)
113, 503, 603 Connection layer (insulating layer)
614 Support portions 1101 and 1201 Optical deflectors 1102 and 1202 Light source (laser)

Claims (10)

The movable plate, at least one shaft support portion that pivotally supports the movable plate with respect to the support substrate, a movable comb-like structure extending from the movable plate, and the movable comb-like structure are engaged with each other at a distance. A fixed comb-like structure disposed at a position, and electrostatic drive means that swings and displaces the movable plate by applying an electrostatic force between the movable comb-like structure and the fixed comb-like structure, The movable comb-like structure is composed of a first movable comb-teeth layer and a second movable comb-teeth layer that are joined together by a connection layer, and the fixed comb-like structure is electrically insulated from each other. An oscillator device comprising a first fixed comb layer and a second fixed comb layer joined by layers. 2. The oscillator device according to claim 1, wherein the shaft support portion is a torsion bar, and the movable comb-like structure extends in a direction substantially perpendicular to an extension direction of the torsion bar. The movable plate, the shaft support, the movable comb-like structure, the fixed comb-like structure, the connection layer, and the insulating layer are formed of a silicon wafer in which two silicon layers are bonded via an insulating layer. The oscillator device according to 1 or 2. In a state where the movable plate does not swing, the connection layer and the insulating layer are in the same plane, and the thickness of the movable comb-like structure is fixed in the thickness direction perpendicular to the connection layer and the insulating layer. The oscillator device according to any one of claims 1 to 3, wherein the oscillator device is smaller than a thickness of the comb-like structure. 5. The oscillator device according to claim 2, wherein the movable comb-like structure extends from an edge of the movable plate in the substantially orthogonal direction. 5. The oscillator device according to claim 2, wherein the movable comb-like structure extends from a support portion that is close to the shaft support portion and extends from the movable portion in a direction substantially parallel to the extension direction thereof. . At least one of the first movable comb tooth layer and the second movable comb tooth layer of the movable comb tooth structure and the first fixed comb tooth layer and the second fixed comb tooth layer of the fixed comb tooth structure. The oscillator device according to any one of claims 1 to 6, wherein one set also serves as a capacitance detecting means for detecting a capacitance between the movable plates that changes in accordance with the oscillation and displacement of the movable plate. 4. The method for manufacturing an oscillator device according to claim 3, wherein the movable comb-like structure and the fixed comb-like structure are spaced from a silicon wafer in which two silicon layers are bonded via an insulating layer. The movable plate, the shaft support, the movable comb-like structure, and the fixed comb-like structure are formed while performing alignment for meshing with a mask formed on the surface of the silicon wafer by photolithography and etching. A method of manufacturing an oscillator device.
8. An optical deflector comprising a reflecting mirror formed on a movable plate of the oscillator device according to claim 1. An optical device comprising: the optical deflector according to claim 9; and a light source that emits light incident on the optical deflector.

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