JP2006121008A - Semiconductor component mounted structure and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor component mounted structure which is easy to manufacture, adaptive to narrow pitches, and improved in insulation reliability and connection reliability, and to provide a manufacturing method thereof. <P>SOLUTION: The mounting method of electrically connecting a semiconductor (101) to a substrate is disclosed including an insulating layer (1201) and wiring patterns (501 and 502). The method comprises a step of forming metal projections (200) in nearly identical shapes on the semiconductor (101), positioning and mounting the semiconductor (101) on the substrate, applying pressure to crush the metal projections (200), connecting the metal projections (200) to a wiring pattern (501) formed on the top surface of the substrate, and connecting the metal projections (200) to a wiring pattern (502) formed on the reverse surface of the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor component mounting body and a manufacturing method thereof.

  In recent years, with the demand for higher performance and miniaturization of electronic devices, demands for higher density and higher functionality of electronic component mounting bodies such as circuit boards, modules, and semiconductor packages have become increasingly severe. Also in semiconductors, electrode terminals have become multi-pin and narrow pitched with higher density and higher integration, but on the other hand, it has become difficult to keep up with the wiring pitch of the substrate on which the semiconductor is mounted. As a method for mounting a semiconductor, it can be broadly divided into wire bonding mounting and flip chip mounting, but flip chip mounting has been attracting attention for the purpose of increasing the number of pins, reducing the pitch, and reducing wiring delay.

  FIG. 15 shows a structure of a semiconductor component mounting body in which a semiconductor chip is flip-chip mounted on a multilayer substrate. The metal protrusion formed on the active surface of the semiconductor is electrically connected to a wiring pattern provided on the surface layer of the substrate. Wiring is routed from the surface wiring pattern through vias and through holes provided as interlayer connection portions. In this conventional configuration, it is difficult to cope with the increase in the number of pins and the narrow pitch of semiconductor electrode terminals, and a large substrate area is required due to the routing of vias, through holes, and wiring patterns.

As means for solving this problem, metal projections having different heights for the surface layer wiring pattern and the inner layer wiring pattern are formed on the active surface of the semiconductor, respectively, and directly connected to the wiring patterns of different layers via the metal projections. A method is proposed in Patent Document 1 below. With this configuration, the degree of freedom in designing the substrate such as the reduction of vias and through holes is improved.
JP 2002-246415 A

However, the mounting method disclosed in Patent Document 1 has the following problems.
(1) It is necessary to previously form metal protrusions having different heights for each layer, and the process of forming the metal protrusions becomes complicated.
(2) It is necessary to strictly control the height variation when forming the metal protrusion.
(3) When there is a variation in the thickness of the same layer of the substrate, the variation cannot be absorbed.
(4) By forming metal protrusions with different heights, the vertical and horizontal orientations of the semiconductor occur. Therefore, the direction must be specified at the time of mounting, and defects such as upside down may occur.
(5) When connecting metal protrusions to the surface layer wiring pattern and the inner layer wiring pattern, it is essential that the insulating layer such as the resin layer is thin. In that case, ensuring insulation between the surface layer wiring pattern and the inner layer wiring pattern Is difficult.

  The present invention proposes a new mounting method, which is a semiconductor component mounting body and a method for manufacturing the semiconductor component mounting body, for solving the conventional problems.

  The method for manufacturing a semiconductor component mounting body according to the present invention is a mounting method in which a semiconductor is electrically connected to a substrate including an insulating layer and a wiring pattern, wherein a metal protrusion having substantially the same shape is formed on the semiconductor, and the semiconductor Is positioned and mounted on the substrate, and the metal protrusions are crushed by applying pressure to connect the metal protrusions and the wiring pattern formed on the surface of the substrate. The metal protrusions and the substrate And a step of connecting the wiring pattern formed on the back surface of the substrate.

  Another method of manufacturing a semiconductor component mounting body according to the present invention is a mounting method in which a semiconductor is electrically connected to a multilayer substrate composed of an insulating layer and a wiring pattern, and a metal protrusion having substantially the same shape is formed on the semiconductor. The semiconductor is positioned and mounted on the substrate, the metal protrusions of the semiconductor are pressed and crushed, and the wiring pattern formed at least on the inner layer of the substrate is formed on a layer different from the inner layer. And a step of connecting to the wiring pattern.

  The semiconductor component mounting body of the present invention is a semiconductor component mounting body in which a semiconductor is electrically connected to a flexible substrate via a metal protrusion provided on the semiconductor, and the flexible substrate includes an organic film, A resin layer formed on both sides of the organic film; and a wiring pattern embedded in the resin layer, wherein at least one of the metal protrusions of the semiconductor is formed on the wiring pattern formed on the surface of the flexible substrate. It is connected, and at least one of the metal protrusions of the semiconductor penetrates the organic film and is connected to the wiring pattern formed on the back surface of the flexible substrate.

  Another semiconductor component mounting body of the present invention is a semiconductor component mounting body in which a semiconductor is electrically connected to a flexible substrate via a metal protrusion provided on the semiconductor, and the flexible substrate includes an organic film and A multilayer flexible substrate in which a plurality of flexible substrates including a resin layer formed on both surfaces of the organic film and a wiring pattern embedded in the resin layer are laminated, and at least one of the metal protrusions of the semiconductor is , Penetrating the organic film, connected to the wiring pattern formed in the inner layer of the flexible substrate, and at least one of the metal protrusions of the semiconductor is a layer connected to the metal protrusions Are connected to wiring patterns of different layers.

  According to the method for manufacturing a semiconductor component mounting body of the present invention, compared to the conventional case where the semiconductor is electrically connected to the surface layer wiring pattern via the metal protrusion, the semiconductor component mounting body is directly electrically connected to the inner layer wiring pattern. It is possible to reduce vias and through holes. In addition, it is possible to cope with a narrow pitch of the semiconductor, and the degree of freedom in designing the substrate is increased.

  Further, in the semiconductor component mounting body of the present invention, by using this flexible substrate as a substrate, the metal protrusions are penetrated and directly connected to the wiring pattern of each layer, and the insulation reliability of each layer is ensured. it can.

  In the method for manufacturing a semiconductor component mounting body according to the present invention, metal protrusions having substantially the same shape (substantially the same height) are formed on the active surface of the semiconductor. When mounting a semiconductor on a substrate, pressure is applied to crush the metal protrusions, and the wiring patterns (surface wiring pattern and back wiring pattern, surface wiring pattern and inner wiring pattern, etc.) provided in different layers are electrically connected simultaneously. Connecting.

The present invention has the following advantages over the conventional example proposed in Japanese Patent Laid-Open No. 2002-246415.
(1) It is not necessary to form metal protrusions having different heights for each layer, and metal protrusions having substantially the same shape may be formed on the active surface of the semiconductor, and the process is easy.
(2) The range of height variation when forming the metal protrusions is moderate.
(3) Variations in the thickness of the same layer of the substrate can be absorbed by the metal protrusion being crushed.
(4) Since the metal protrusions having substantially the same height are formed, there is no distinction between the upper and lower sides and the right and left sides of the semiconductor, and it is not necessary to worry about the orientation during mounting. Defects such as upside down do not occur.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, components having substantially the same function are denoted by the same reference numerals for the sake of simplicity. In addition, this invention is not limited to the following embodiment.

(Embodiment 1)
1A to 1C show a method for manufacturing a semiconductor component mounting body according to the first embodiment of the present invention. First, a metal protrusion 200 having substantially the same shape is formed on the semiconductor 101 (FIG. 1A). This semiconductor is positioned on a substrate (FIG. 1B) composed of an insulating layer 1201 and wiring patterns 501 and 502, and mounted while applying pressure. At this time, the metal protrusion 200 is crushed and connected to the metal protrusion 201 connected to the wiring pattern 501 provided on the substrate surface and the wiring pattern 502 provided on the back surface of the substrate through the insulating layer. A metal protrusion 202 is formed (FIG. 1C).

(Embodiment 2)
2A to 2C show a method for manufacturing a semiconductor component mounting body according to the second embodiment of the present invention. In the second embodiment, as compared with the first embodiment, a flexible substrate including an organic film 401 as a substrate, a resin layer 301 formed on both surfaces of the organic film 401, and wiring patterns 501 and 502 embedded in the resin layer 301. 1401 is used. First, a metal protrusion 200 having substantially the same shape is formed on the semiconductor 101 (FIG. 2A). The semiconductor is positioned on a flexible substrate 1401 (FIG. 2B) including an organic film 401, a resin layer 301 formed on both surfaces of the organic film 401, and wiring patterns 501 and 502 embedded in the resin layer 301. Mount with pressure. At this time, the metal protrusion 200 was crushed and provided on the back surface of the substrate through the metal protrusion 201, the resin layers 301 and 302, and the organic film 401 connected to the wiring pattern 501 provided on the substrate surface. A metal protrusion 202 connected to the wiring pattern 502 is formed (FIG. 2C).

(Embodiment 3)
3A to 3C show a method for manufacturing a semiconductor component mounting body according to Embodiment 3 of the present invention. In the third embodiment, as compared with the first embodiment, a multilayer substrate including an insulating layer 1201 and wiring patterns 501, 502, and 503 is used as a substrate. First, a metal protrusion 200 having substantially the same shape is formed on the semiconductor 101 (FIG. 3A). The semiconductor is positioned on a substrate (FIG. 3B) and mounted while applying pressure. At this time, the metal protrusions 200 are crushed and connected to the metal protrusions 201 connected to the wiring patterns 501 provided on the substrate surface and the wiring patterns 502 provided on the inner layer of the substrate through the insulating layer 1201. A metal protrusion 202 is formed (FIG. 3C).

(Embodiment 4)
4A to 4C show a method for manufacturing a semiconductor component mounting body according to the fourth embodiment of the present invention. In Embodiment 4, compared with Embodiment 3, organic films 401 and 402 as substrates, resin layers 301, 302, and 303 formed on both surfaces of organic films 401 and 402, and wiring pattern 501 embedded in the resin layer , 502, and 503 are used. First, a metal protrusion 200 having substantially the same shape is formed on the semiconductor 101 (FIG. 4A). The semiconductor is positioned and mounted on a multilayer flexible substrate 1402 (FIG. 4B) while applying pressure. At this time, the metal protrusion 200 is crushed and penetrates through the metal protrusion 201 connected to the wiring pattern 501 provided on the substrate surface, the resin layer 301, a part of the resin layer 302, and the organic film 401. A metal protrusion 202 connected to the wiring pattern 502 provided on the substrate is formed (FIG. 4C).

  In the fourth embodiment, as shown in FIGS. 5A to 5C, metal projections are connected to the wiring pattern 501 provided on the surface layer, the wiring pattern 502 provided on the inner layer, and the wiring pattern 503 provided on the back surface of the substrate. Such a form is also possible.

  Although the manufacturing method of the semiconductor component mounting body of the present invention is shown in the first to fourth embodiments, each member and conditions will be described below.

  The process of crushing the metal protrusion and the process of connecting the metal protrusion to the wiring pattern of each layer are basically the same process. That is, pressure is applied to the metal protrusion while being sandwiched between the wiring pattern and the semiconductor, and the connection is completed at the same time that the metal protrusion is crushed. In addition, after the metal protrusions are crushed and physically connected to the wiring pattern, the metal protrusions or the wiring pattern are melted by heat or the like, and the metal protrusions and the wiring pattern are electrically connected. Examples of such a method include forming metal protrusions with solder or solder plating on a wiring pattern.

  As the metal protrusion, a gold bump formed by a gold wire is most commonly used. Further, bumps formed by other metal wires, plating bumps, solder bumps, bumps formed by conductive paste in which metal powder and resin are mixed, and the like can be used. The shape of the metal protrusion is not particularly limited, but a thumbtack-shaped bump can be preferably used.

  The shape and height of the metal protrusions do not have to be exactly the same, and may be approximately the same shape as long as they usually vary due to variations in mechanical accuracy. Further, it is not necessary to change the shape and height of the metal protrusion depending on which layer is connected. Basically, the length may be determined according to the metal protrusion connected to the far layer.

  It is necessary to use an optimum value for the crushing pressure of the metal projection depending on the thickness, material, mounting temperature, mounting time, etc. of the semiconductor, the substrate, and the wiring pattern. Moreover, although the method of pressing a pressure with a jig | tool etc. from a semiconductor upper part can be utilized preferably, the method etc. do not ask | require especially. When the metal protrusion is connected to any layer, it must be at least crushed and mounted. In addition, after squeezing and connecting, it is possible to further strengthen the connection by applying heat or ultrasonic waves. For example, it is possible to use a form in which the wiring pattern is solder-plated, and heat is applied after mounting to connect the metal protrusion and the wiring pattern via the solder. Further, as a pressure profile, a method of applying necessary pressure at once, a method of applying pressure again after positioning and temporarily fixing a semiconductor to a substrate, a method of applying pressure in several times, or the like can be used. More favorable conditions can be set by controlling the pressure profile and the temperature profile.

  The mounting temperature is preferably a temperature equal to or higher than the glass transition point (Tg) at which the substrate material (insulating layer, organic film) softens. Since the substrate material is softened, there is an advantage that the metal protrusions can easily penetrate and the setting of ranges such as mounting time and pressure becomes easy.

  As shown in FIGS. 6A to 6C, there is an advantage that the metal protrusions can be easily penetrated by opening holes 1301 and 1302 in advance at the locations where the metal protrusions 201 penetrate the organic film 401. In that case, it is preferable that the hole provided in the organic film is made small and the metal protrusion expands after penetration. By setting it as such a structure, between a metal protrusion and an organic film is filled without a gap, and the insulation reliability of each layer is ensured more. The hole may be filled with a resin layer.

  Further, in the present invention, the metal protrusions are crushed and electrically connected to the wiring pattern, so that even when the thickness of the same layer of the substrate is uneven or the substrate is warped, the variation is absorbed. (FIGS. 7A-C).

  Note that electronic components may be mounted on the substrate, and the types and shapes of electronic components such as resistors, capacitors, passive components such as inductors, modules, etc. are not particularly limited. It is also possible to mount electronic components after mounting the semiconductor. Similarly, an electronic component may be built in the substrate, and the type and shape of the built-in component are not particularly limited, such as a chip shape, a sheet-like capacitor, a resistor, and an inductor.

  In addition, after manufacturing a semiconductor component mounting body by these manufacturing methods, you may put the process of inserting an underfill between a semiconductor and a board | substrate. It is also possible to perform these steps after the underfill is previously installed on the substrate. As the underfill, liquid or sheet-like materials can be preferably used.

  The insulating layer or resin layer of the substrate and the organic film may be B stage or C stage. If it is a B stage, a metal protrusion can penetrate easily, and after mounting a semiconductor, it can harden | cure and can be set as a C stage. Moreover, if it is a C stage, the semiconductor component mounting body of this invention can be produced by penetrating a metal protrusion by controlling the pressure and temperature at the time of mounting. Here, the B stage refers to a semi-cured or partially cured state, and the C stage refers to a state where curing has been completed.

(Embodiment 5)
Next, possible embodiments of the semiconductor component mounting body will be described. In the following embodiments of the semiconductor component mounting body, the same reference numerals are given to the same components as those in the above-described embodiment. Further, unless otherwise specified, it is the same as the above-described embodiment, and detailed description thereof is omitted.

  FIG. 8 shows a semiconductor component mounting body according to the fifth embodiment of the present invention. The semiconductor 101 is mounted on a double-sided board of a flexible substrate 1403 including an organic film 401, resin layers 301 and 302 formed on both sides thereof, and wiring patterns 501 and 502 embedded in the resin layer. The metal protrusion 201 formed on the active surface of the semiconductor 101 is electrically connected to the wiring pattern 501 provided on the surface of the flexible substrate 1403, and the metal protrusion 202 includes the resin layers 301 and 302 and the organic film. In this configuration, the wiring pattern 502 is provided so as to penetrate through 401 and be provided on the back surface of the flexible substrate 1403.

(Embodiment 6)
FIG. 9 shows a semiconductor component mounting body according to the sixth embodiment of the present invention. In Embodiment 6, compared with Embodiment 5, organic films 401 and 402 as substrates, resin layers 301, 302, and 303 formed on both surfaces of organic films 401 and 402, and wiring pattern 501 embedded in the resin layer , 502, and 503 are used, and the semiconductor 101 is mounted on the multilayer flexible substrate 1404. The metal protrusion 201 formed on the active surface of the semiconductor 101 is electrically connected to the wiring pattern 501 provided on the surface of the flexible substrate 1404, and the metal protrusion 202 is part of the resin layers 301 and 302. In addition, the organic film 401 penetrates and is electrically connected to the wiring pattern 502 provided in the inner layer of the flexible substrate 1404.

(Embodiment 7)
FIG. 10 shows a semiconductor component mounting body according to the seventh embodiment of the present invention. In the seventh embodiment, as in the sixth embodiment, the semiconductor 101 is mounted on the multilayer flexible substrate 1405. The metal protrusion 201 formed on the active surface of the semiconductor 101 is electrically connected to the wiring pattern 501 provided on the surface of the flexible substrate 1405, and the metal protrusion 202 includes part of the resin layers 301 and 302 and the organic film 401. Are electrically connected to the wiring pattern 502 provided in the inner layer of the flexible substrate 1405. Further, the metal protrusion 203 is configured to penetrate the resin layers 301, 302, and 303 and the organic films 401 and 402 and to be electrically connected to the wiring pattern 503 provided on the back surface of the flexible substrate 1405.

  With these configurations, compared to the conventional case where the semiconductor is electrically connected to the surface layer wiring pattern via the metal protrusion, it is directly electrically connected to the wiring pattern on the inner layer or the back surface via the metal protrusion. It is possible to reduce vias and through holes. In addition, it is possible to cope with a narrow pitch of the semiconductor, and the degree of freedom in designing the substrate is increased.

  Further, in order for the metal protrusion to penetrate to the wiring pattern provided on the inner layer or the back side of the substrate, the substrate itself needs to be thin relative to the metal protrusion. In recent years, semiconductor terminal electrodes have been narrowed in pitch, and 125 μm pitch and 80 μm pitch are the current top level. Under such conditions, the base diameter of the metal protrusion is about 50 μm to 100 μm, and the length is about 40 μm to several hundreds of μm. Also in this invention, the one where a board | substrate thickness is thin is preferable, and the one where the length of the metal protrusion before mounting is longer than board | substrate thickness is preferable. In addition, when the substrate becomes thin, there is a concern about the insulation reliability of each layer. In the semiconductor component mounting body according to the present embodiment, a flexible substrate including an organic film, a resin layer formed on both sides of the organic film, and a wiring pattern embedded in the resin layer is used as a substrate, and the metal protrusion is penetrated. Even when electrically connected to the wiring pattern of each layer, the insulation reliability of each layer can be ensured by the insulating property of the organic film provided in the substrate.

  In addition, it is preferable that the thickness of a resin layer is thicker than the thickness of an organic film, and it is preferable that the thickness of an organic film is 5 micrometers or less. With such a configuration, the thickness of the substrate can be reduced, and the insulation reliability of the substrate can be ensured. Moreover, it is preferable that the thickness of the wiring pattern is 80% or more of the resin layer thickness. With this configuration, on the surface side of the substrate, there is little sinking of the wiring pattern during mounting, and connection is easy. Conversely, there are few resin layers on the inner layer and the back side of the substrate, and the metal protrusions are easily connected to the wiring pattern. As the organic film used in such a form, an aramid film or a polyimide film can be preferably used.

  In addition, it is preferable that the shape of the wiring pattern to which the metal protrusion is connected is a substantially concave shape (FIG. 11). With such a shape, the contact area with the metal protrusion is increased, and the connection reliability is improved. By optimizing conditions such as mounting process (mounting pressure, mounting temperature, etc.), substrate (resin layer, organic film, electrode thickness, material properties, etc.), metal projection material, thickness, etc., the shape of the wiring pattern Can be made into a substantially concave shape.

  Further, the connection cross-sectional area between the metal protrusion and the wiring pattern is preferably larger when connected to the wiring pattern of the layer closer to the mounting surface side of the semiconductor than when connected to the wiring pattern of the far layer. In general, a semiconductor has a smaller thermal expansion coefficient than a substrate, and a metal protrusion connected to a layer closer to the semiconductor is more likely to be stressed by the thermal expansion coefficient. Further, the metal protrusions connected to the wiring pattern of the layer far from the semiconductor are in contact with the resin layer more, and the resin layer serves as a reinforcing agent, so that the thermal stress is relieved. Therefore, there is an advantage that the connection reliability can be maintained by increasing the connection cross-sectional area of the metal projection and the wiring pattern in the portion connected to the wiring pattern of the layer close to the semiconductor mounting surface side.

  Moreover, in the semiconductor component mounting body of the present invention, an interlayer connection portion for electrically connecting the wiring patterns may be provided (FIG. 12). As the interlayer connection site, a through hole or a via made of a conductive paste can be preferably used. Further, an interlayer connection portion having a wiring pattern deformed by pressurization or the like and penetrating the organic film and having a cross-sectional shape substantially X-shaped or U-shaped can be preferably used (FIG. 13).

  In addition, as above-mentioned as a metal protrusion, the gold bump formed with a gold wire is most generally available. Further, bumps formed by other metal wires, plating bumps, solder bumps, bumps formed by conductive paste in which metal powder and resin are mixed, and the like can be used.

  Also in the semiconductor component mounting body, it is preferable to use an underfill provided between the semiconductor and the substrate. By adopting such a configuration, a semiconductor component mounting body with higher connection reliability can be provided.

  In the semiconductor component mounting body of the present invention, electronic components may be mounted, and the types and shapes of the electronic components are not particularly limited, such as resistors, capacitors, passive components such as inductors, modules, and the like. Similarly, an electronic component may be built in the substrate, and the type and shape of the built-in component are not particularly limited, such as a chip shape, a sheet-like capacitor, a resistor, and an inductor. Also, the form of the semiconductor component mounting body of the present invention is not particularly limited, such as considering it as a module and mounting it on another mother board.

  In addition, in the semiconductor component mounting body of the present invention, the flexible substrate composed of the organic film, the resin layer, and the wiring pattern has been described. However, a substrate in which the flexible substrate is attached to another substrate may be used. If the semiconductor mounting part is this flexible substrate, the form is not particularly limited.

  FIG. 14 shows an example incorporating the above-described embodiment. With such a configuration, it is possible to provide a semiconductor component mounting body that can handle a narrower pitch than the conventional example, and that has further improved insulation reliability and connection reliability.

  Examples of the present invention will be described below.

Example 1
In this example, the semiconductor component mounting body shown in FIGS. 2A to 2C was manufactured according to the method for manufacturing a semiconductor component mounting body described in the second embodiment. The following were used as members. A silicon semiconductor having a 5 × 5 mm square, 100 μm thickness, and 125 μm pitch terminal electrodes having a 144 pin peripheral arrangement (36 pins × 4 sides) was prepared. A thumbtack-shaped gold bump was formed as a metal protrusion having substantially the same shape on the active surface of the semiconductor. The manufacturing method is a conventionally known method, in which a gold wire (diameter 25 μm) is heated (300 ° C.) and ultrasonic waves are applied to a gold wire (25 μm) by a bump bonder on an electrode terminal provided on the active surface of the semiconductor. Shape bumps were formed. The bump formation conditions performed this time were the same for all bumps, and bumps with almost the same shape could be formed although there were variations due to mechanical errors. The diameter of the base portion of the bump was 70 ± 5 μm, the height of the base was 20 ± 3 μm, and the height of the bump including the base was in the range of 65 to 95 μm. As the substrate, a flexible double-sided board (30 x 30 mm square) is prepared, the organic film thickness is 4 μm, the resin layer thickness is 14 μm, the wiring pattern thickness is 12 μm, the wiring pitch of the semiconductor mounting portion is 250 μm, and the total thickness of the substrate is 32 μm. (14 μm + 4 μm + 14 μm).

  The semiconductor was flip-chip mounted on this flexible substrate. This time, the NCF method was used as the mounting method. A commercially available NCF film (5 × 5 mm square, thickness 40 μm, epoxy resin + inorganic filler) was prepared and pasted on the semiconductor mounting portion of the substrate in advance. The semiconductor was positioned using a semiconductor mounting machine and electrically connected to each layer while crushing the bumps. The mounting conditions were a pressure of 30 kgf (about 200 g per bump), a temperature of 200 ° C. and 60 seconds. At the same time as mounting the semiconductor, the NCF sheet as an underfill was cured.

  The prepared semiconductor component mounting body was observed in cross section, and the height of each bump (from the active surface of the semiconductor to the wiring pattern) was measured. As a result, the bumps (metal protrusions 201) connected to the wiring pattern 501 on the surface layer had an average of 30 μm Bumps (metal protrusions 202) connected to the wiring pattern 502 on the back surface had an average of 50 μm.

  Moreover, the initial conduction of the semiconductor component mounting body was confirmed on both the surface layer side and the back surface side of the wiring pattern, and there was no problem in the insulation reliability of each layer. Even after a moisture absorption test at 85 ° C./85% RH (RH is relative humidity) for 500 hours, neither conduction nor insulation reliability was confirmed, and it was good.

  As described above, by using the mounting method of the present invention, a 125 μm pitch semiconductor can be mounted on a substrate provided with a 250 μm pitch substrate wiring pattern, and the connection reliability and insulation reliability are excellent. A semiconductor component mounting body was obtained.

(Example 2)
In this example, the semiconductor component mounting body shown in FIGS. 5A to 5C was manufactured according to the method for manufacturing a semiconductor component mounting body described in the fourth embodiment.

  As the member, the same semiconductor as in Example 1 was used. For the semiconductor metal protrusions, thumbtack-shaped gold bumps were produced under the production conditions different from those of Example 1 using the same members and machines. The diameter of the base portion of the bump was 65 ± 5 μm, the height of the base was 17 ± 3 μm, and the height of the bump including the base was in the range of 85-110 μm. In Example 2 as well, bump formation conditions were the same for all bumps, and bumps having substantially the same shape could be formed although there were variations due to mechanical errors. As a substrate, a multilayer flexible substrate (30 × 30 mm square) is prepared, the thickness of the organic films 401 and 402 is 4 μm, the thickness of the resin layers 301 and 303 is 14 μm, the thickness of the resin layer 302 is 28 μm, the thickness of the wiring pattern is 12 μm, and the semiconductor mounting The wiring pitch of the part is 250 μm, and the substrate thickness is 64 μm in total (14 μm + 4 μm + 28 μm + 4 μm + 14 μm). A semiconductor was mounted on the multilayer flexible substrate by NCF. The mounting conditions were the same as in Example 1 except that the pressure was 45 kgf (about 300 g per bump).

  A cross-section of the produced semiconductor component mounting body was observed, and the height of each bump (from the active surface of the semiconductor to the wiring pattern) was measured. As a result, the bump (metal protrusion 201) connected to the surface wiring pattern 501 had an average of 20 μm. Bumps (metal protrusions 202) connected to the wiring pattern 502 on the inner surface averaged 40 μm, and bumps (metal protrusions 203) connected to the wiring pattern 503 on the back surface averaged 72 μm.

  Further, initial conduction of the semiconductor component mounting body was confirmed on the surface layer, inner layer, and back surface of the wiring pattern, and there was no problem with the insulation reliability of each layer. Further, even after 500 hours of a moisture absorption test at 85 ° C./85% RH, neither conduction nor insulation reliability was confirmed and it was good.

  As described above, by using the mounting method of the present invention, a 125 μm pitch semiconductor can be mounted on a substrate provided with a 250 μm pitch substrate wiring pattern, and the connection reliability and insulation reliability are excellent. A semiconductor component mounting body was obtained.

  In addition, the Example shown here is an example, Comprising: This invention is not limited to the above Example.

[Industrial applicability]
ADVANTAGE OF THE INVENTION According to this invention, the semiconductor component mounting body which can mount the semiconductor of a narrow pitch, and the insulation reliability and connection reliability improved, and its manufacturing method can be provided.

FIGS. 8A to 8C are cross-sectional views illustrating a method for manufacturing a semiconductor component mounting body according to the first embodiment of the present invention. FIGS. AC is sectional drawing which shows the manufacturing method of the semiconductor component mounting body in Embodiment 2 of this invention. AC is sectional drawing which shows the manufacturing method of the semiconductor component mounting body in Embodiment 3 of this invention. AC is sectional drawing which shows the manufacturing method (1) of the semiconductor component mounting body in Embodiment 4 of this invention. AC is sectional drawing which shows the manufacturing method (2) of the semiconductor component mounting body in Embodiment 4 of this invention. AC is sectional drawing which shows the manufacturing method when the hole is previously opened in the location where a metal protrusion penetrates the organic film in one Embodiment of this invention. AC is sectional drawing which shows an advantage in case the thickness in the same layer of the board | substrate in another one Embodiment of this invention has dispersion | variation. Sectional drawing of the semiconductor component mounting body in Embodiment 5 of this invention. Sectional drawing of the semiconductor component mounting body in Embodiment 6 of this invention. Sectional drawing of the semiconductor component mounting body in Embodiment 7 of this invention. Sectional drawing of the semiconductor component mounting body whose shape of the wiring pattern to which the metal protrusion in one Embodiment of this invention was connected is a substantially concave shape. Sectional drawing of the semiconductor component mounting body in which the interlayer connection site | part in another embodiment of this invention is provided. Sectional drawing of the semiconductor component mounting body whose interlayer connection site | part in another embodiment of this invention is a substantially X shape or a substantially U shape. Sectional drawing of the semiconductor component mounting body in another embodiment of this invention. An example showing the structure of a conventional semiconductor component mounting body

Explanation of symbols

101 semiconductor
200,201,202,203,204 Metal projection
301 resin layer
401,402,403 Organic film
501,502,503,504 Wiring pattern
601,602 beer
701,702,703 Wiring pattern with substantially concave shape
801 Almost X-shaped interlayer connection
901 Almost U-shaped interlayer connection
1001 Underfill
1101 Through hole
1201 Insulation layer
1301,1302 Holes in the organic film
1401,1402,1403,1404,1405 Flexible substrate

Claims (14)

A mounting method for electrically connecting a semiconductor to a substrate including an insulating layer and a wiring pattern,
Forming a metal protrusion having substantially the same shape on the semiconductor;
Positioning and mounting the semiconductor on the substrate;
Crushing the metal protrusion by applying pressure, connecting the metal protrusion and the wiring pattern formed on the surface of the substrate;
The manufacturing method of the semiconductor component mounting body characterized by including the process of connecting the said metal protrusion and the said wiring pattern formed in the back surface of the said board | substrate. The substrate is a flexible substrate comprising an organic film, a resin layer formed on both sides of the organic film, and a wiring pattern embedded in the resin layer,
The manufacturing method of the semiconductor component mounting body of Claim 1 which penetrates the said organic film in the process of connecting the said metal protrusion and the said wiring pattern formed in the back surface of the said board | substrate. A mounting method for electrically connecting a semiconductor to a multilayer substrate comprising an insulating layer and a wiring pattern,
Forming a metal protrusion having substantially the same shape on the semiconductor;
Positioning and mounting the semiconductor on the substrate;
Crushing the metal protrusions of the semiconductor by applying pressure to connect the wiring pattern formed at least on the inner layer of the substrate and the wiring pattern formed on a layer different from the inner layer. A method for manufacturing a semiconductor component mounting body. The substrate is a multilayer flexible substrate in which a plurality of flexible substrates including an organic film, a resin layer formed on both surfaces of the organic film, and a wiring pattern embedded in the resin layer are laminated,
4. The manufacturing of a semiconductor component mounting body according to claim 3, wherein in the step of crushing the metal protrusions of the semiconductor by applying pressure to connect to the wiring pattern formed on the inner layer of the substrate, the semiconductor film is penetrated through the organic film. Method.   The manufacturing method of the semiconductor component mounting body of Claim 2 or 4 using the flexible substrate which opened the hole previously in the location where the said metal protrusion penetrates the said organic film.   The manufacturing method of the semiconductor component mounting body according to claim 5, wherein the hole expands when the metal protrusion penetrates the organic film. A semiconductor component mounting body in which a semiconductor is electrically connected to a flexible substrate via a metal protrusion provided on the semiconductor,
The flexible substrate includes an organic film, a resin layer formed on both surfaces of the organic film, and a wiring pattern embedded in the resin layer,
At least one of the metal protrusions of the semiconductor is connected to the wiring pattern formed on the surface of the flexible substrate,
In addition, at least one of the metal protrusions of the semiconductor penetrates the organic film and is connected to the wiring pattern formed on the back surface of the flexible substrate. A semiconductor component mounting body in which a semiconductor is electrically connected to a flexible substrate via a metal protrusion provided on the semiconductor,
The flexible substrate is a multilayer flexible substrate in which a plurality of flexible substrates composed of an organic film, a resin layer formed on both surfaces of the organic film, and a wiring pattern embedded in the resin layer are laminated,
At least one of the metal protrusions of the semiconductor penetrates the organic film and is connected to the wiring pattern formed in the inner layer of the flexible substrate,
In addition, at least one of the metal protrusions of the semiconductor is connected to a wiring pattern in a layer different from the layer to which the metal protrusions are connected.   The semiconductor component mounting body according to claim 7 or 8, wherein a thickness of the resin layer is thicker than a thickness of the organic film.   The thickness of the said organic film is 5 micrometers or less, The semiconductor component mounting body in any one of Claims 7-9.   The semiconductor component mounting body according to claim 7 or 8, wherein a shape of the wiring pattern to which the metal protrusion is connected is a substantially concave shape.   The connection cross-sectional area between the metal protrusion and the wiring pattern is larger when the connection to the wiring pattern in the layer near the semiconductor mounting surface is larger than the connection with the wiring pattern in the far layer. Item 9. The semiconductor component package according to Item 7 or 8.   The semiconductor component mounting body according to any one of claims 7 to 12, wherein an interlayer connection portion for electrically connecting the wiring patterns provided on the flexible substrate is provided. The semiconductor component mounting body according to claim 13, wherein the interlayer connection portion has the wiring pattern that penetrates the organic film and has a cross-sectional shape that is substantially X-shaped or substantially U-shaped.

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