JP2006120857A - Vapor phase epitaxy equipment, manufacturing method of semiconductor substrate using the same, and semiconductor substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor phase epitaxy equipment capable of significantly suppressing dropping of growth speed caused by repeated growth of a substrate. <P>SOLUTION: A structure allows the distance between reactive gas and a liquid material stored in the material vessel of the vapor phase epitaxy equipment to keep almost constant. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus for forming a semiconductor thin film by an HVPE method using a liquid raw material, a method for manufacturing a semiconductor substrate using the same, and a semiconductor substrate.

  As materials for light-emitting devices such as laser diodes and white light-emitting diodes that are devices for industrial and information communication equipment, the importance of nitride-based III-V compound semiconductor crystals has increased, for example, gallium nitride (GaN) It is used. However, it is difficult to form a GaN crystal from a molten state like a silicon single crystal. As an alternative method, a metal organic vapor phase epitaxy (MOVPE) method or a halide vapor phase epitaxy (HVPE) method is required. It is. In particular, in order to use a GaN crystal as a device substrate, a certain amount of thickness is required, and an HVPE method capable of forming a crystal at a relatively high growth rate is often used.

An example of forming a GaN crystal substrate by the HVPE method is as follows. First, hydrochloric acid (HCl) gas is supplied to a raw material container containing molten Ga serving as a group III material to generate gallium chloride (GaCl) serving as a group III precursor. By supplying this GaCl to the surface of the sapphire substrate previously set in the apparatus together with ammonia (NH ₃ ), which is a precursor of a separately introduced group V raw material, GaCl and NH ₃ react on the surface of the sapphire substrate. It grows as a GaN crystal. After the GaN crystal is grown to a predetermined thickness, the sapphire substrate is removed to obtain a GaN crystal substrate.

At this time, as the crystal growth is repeated, the amount of molten Ga contained in the raw material container gradually decreases, and the distance from the HCl gas supplied to the molten Ga increases, so the amount of GaCl generated decreases. Thus, there is a problem that the growth rate of the GaN crystal is lowered. This has a serious adverse effect on stabilizing the quality of the GaN crystal. On the other hand, for example, according to the vapor phase growth apparatus disclosed in Japanese Patent Laid-Open No. 6-314658 (Patent Document 1), an auxiliary container is added in parallel with the raw material container to increase the capacity of the group III raw material. By doing this, it is shown that if the consumption of the group III raw material is the same, the decrease in the melt surface inside the raw material container can be suppressed to be small and the production rate of the chloride gas can be kept almost constant.
JP-A-6-314658

  However, even in the above-described vapor phase growth apparatus, it is not possible to prevent the reduction of the group III raw material and the accompanying decrease in the amount of chloride gas generated by repeating the vapor phase growth. In this case, if the thickness and number of crystal substrates that are simultaneously grown increase, the amount of the necessary raw material also increases, so that the decrease rate of the group III raw material increases, and the degree of decrease in the growth rate also increases.

  Accordingly, an object of the present invention is to provide a vapor phase growth apparatus, a semiconductor substrate manufacturing method using the same, and a semiconductor substrate capable of stably supplying a precursor used for crystal growth, solving the above-described problems. There is to do.

  In order to achieve the above object, the present invention is configured as follows.

  The vapor phase growth apparatus according to the first aspect of the present invention is a reaction vessel that contains a semiconductor substrate, a raw material vessel that contains a liquid raw material installed inside the reaction vessel, and is connected to the raw material vessel. Reactive gas supply pipe, at least one or more gas inlets connected to the reaction vessel, a semiconductor substrate installed in the reaction vessel, and a susceptor for holding the semiconductor substrate In the vapor phase growth apparatus provided with a heating source installed outside the reaction vessel and at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, the reactivity A mechanism for maintaining a substantially constant distance between the gas supply pipe and the liquid surface of the liquid raw material, and the mechanism is installed in accordance with the amount of the liquid raw material stored in the raw material container; The liquid source can be adjusted by adjusting the angle. Wherein the the liquid level is generally a structure of a source container that can be kept constant.

  In the present invention, it has a mechanism for keeping the distance between the reactive gas supply pipe and the liquid surface of the liquid raw material substantially constant, and this mechanism depends on the amount of the liquid raw material accommodated in the raw material container. By adjusting the installation angle, the liquid level of the liquid raw material is kept substantially constant (FIGS. 1 to 5 and FIG. 16).

  A vapor phase growth apparatus according to a second aspect of the present invention is a reaction vessel that contains a semiconductor substrate, a raw material vessel that contains a liquid raw material installed inside the reaction vessel, and is connected to the raw material vessel. Reactive gas supply pipe, at least one or more gas inlets connected to the reaction vessel, a semiconductor substrate installed in the reaction vessel, and a susceptor for holding the semiconductor substrate In the vapor phase growth apparatus provided with a heating source installed outside the reaction vessel and at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, the raw material vessel Even when the remaining amount of the liquid raw material stored in the raw material container fluctuates, the reactive gas introduced from the reactive gas supply pipe into the raw material container passes through the raw material container. Shape of the space Generally characterized in that it is a structure of a source container that can be controlled to be constant.

  In the present invention, the structure of the raw material container is such that the reactive gas introduced into the raw material container from the reactive gas supply pipe is contained in the raw material container even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. The shape of the passing space is controlled to be substantially constant (FIGS. 4 to 10).

  According to a third aspect of the present invention, in the vapor phase growth apparatus according to the second aspect, the shape of the space through which the reactive gas introduced into the raw material container passes inside the raw material container is controlled to be substantially constant. The structure of the raw material container can maintain the liquid level of the liquid raw material substantially constant by adjusting the installation angle of the raw material container according to the amount of the liquid raw material accommodated in the raw material container. It is characterized by the structure of a simple raw material container.

  In the present invention, the structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes almost constant is the amount of liquid raw material accommodated in the raw material container. Accordingly, the liquid surface height of the liquid raw material is kept substantially constant by adjusting the installation angle of the raw material container (FIGS. 4 and 5).

  According to a fourth aspect of the present invention, in the vapor phase growth apparatus according to the second aspect, the shape of the space through which the reactive gas introduced into the raw material container passes inside the raw material container is controlled to be substantially constant. The structure of the raw material container is a liquid level adjusting block installed in contact with the liquid raw material contained in the raw material container, and the liquid level adjusting block is moved in a direction substantially perpendicular to the liquid level of the liquid raw material. It is characterized by having a structure having a position control mechanism.

  In the present invention, in order to control the shape of the space through which the reactive gas introduced into the raw material container passes in a substantially constant manner, the liquid level installed in contact with the liquid raw material contained in the raw material container An adjustment block and a position control mechanism for moving the liquid level adjustment block in a direction substantially perpendicular to the liquid level of the liquid raw material (FIGS. 6 and 7).

  According to a fifth aspect of the present invention, in the vapor phase growth apparatus according to the second aspect, the shape of the space through which the reactive gas introduced into the raw material container passes inside the raw material container is controlled to be substantially constant. The structure of the raw material container is a structure in which a part of the liquid surface of the liquid raw material stored in the raw material container is provided with a region not exposed to the reactive gas supplied from the reactive gas supply pipe, And a liquid level adjusting block installed in contact with the liquid raw material in a region not subjected to the exposure, and a position control mechanism for moving the liquid level adjusting block in a direction substantially perpendicular to the liquid level of the liquid raw material. It is a structure.

  In the present invention, in order to control the shape of the space through which the reactive gas introduced into the raw material container passes almost constant, a part of the liquid surface of the liquid raw material contained in the raw material container is reactive. A liquid level adjustment block having a structure in which an area not exposed to the reactive gas supplied from the gas supply pipe is provided, and a liquid level adjustment block installed in contact with the liquid raw material in the area not subjected to the exposure Has a position control mechanism for moving the liquid in a direction substantially perpendicular to the liquid surface of the liquid raw material (FIG. 8).

  A sixth aspect of the present invention is the vapor phase growth apparatus according to the second aspect, wherein the shape of the space through which the reactive gas introduced into the raw material container passes in the raw material container is controlled to be substantially constant. The structure of the raw material container is a structure having a liquid raw material replenishment mechanism for supplying the liquid raw material into the raw material container from the outside of the reaction container (FIG. 9).

  In the present invention, the structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes almost constant is liquid from the outside of the reaction container to the inside of the raw material container. It has a liquid material replenishment mechanism for supplying the material (FIG. 9).

  A seventh aspect of the present invention is the vapor phase growth apparatus according to the second aspect, wherein the shape of the space through which the reactive gas introduced into the raw material container passes in the raw material container is controlled to be substantially constant. The structure of the raw material container is a structure in which a part of the liquid surface of the liquid raw material stored in the raw material container is provided with a region not exposed to the reactive gas supplied from the reactive gas supply pipe, And it is the structure which has the liquid raw material replenishment mechanism for supplying the said liquid raw material from the exterior of reaction container with respect to the area | region which does not receive this exposure.

  The present invention controls the shape of the space through which the reactive gas introduced into the raw material container passes in the raw material container, so that a part of the liquid surface of the liquid raw material contained in the raw material container is reactive. A liquid source replenishment mechanism for supplying a liquid source from the outside of the reaction vessel to a region not exposed to the reactive gas supplied from the gas supply pipe and to the region not subjected to the exposure. (FIG. 10).

  A vapor phase growth apparatus according to an invention of claim 8 is installed in a reaction vessel containing a semiconductor substrate, a raw material vessel for containing a liquid raw material installed in the reaction vessel, and in the reaction vessel. A reactive gas supply pipe, at least one or more gas inlets installed in connection with the reaction vessel, a semiconductor substrate installed in the reaction vessel, and a susceptor for holding the semiconductor substrate; In the vapor phase growth apparatus provided with a heating source installed outside the reaction vessel and at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, the reactive gas The structure of the supply pipe is such that a part of the reactive gas supply pipe is in contact with the liquid raw material accommodated in the raw material container, and a part or the whole of the region in which the reactive gas supply pipe is in contact with the liquid raw material With an opening And wherein the door.

  In the present invention, the structure of the reactive gas supply pipe is such that part of the reactive gas supply pipe is in contact with the liquid raw material accommodated in the raw material container and the reactive gas supply pipe is in part of the region in contact with the liquid raw material. Or it has an opening part over the whole (FIGS. 11-15).

  A vapor phase growth apparatus according to an invention of claim 9 is installed in a reaction vessel for containing a semiconductor substrate, a raw material vessel for containing a liquid raw material installed in the reaction vessel, and in the reaction vessel. A reactive gas supply pipe, at least one or more gas inlets installed in connection with the reaction vessel, a semiconductor substrate installed in the reaction vessel, and a susceptor for holding the semiconductor substrate; And a heating source installed outside the reaction vessel, and at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, and the structure of the reactive gas supply pipe is A part of the reactive gas supply pipe is in contact with the liquid raw material accommodated in the raw material container, and the reactive gas supply pipe has an opening over a part or the whole of the region in contact with the liquid raw material. Vapor growth characterized by The structure of the raw material container is such that the reactive gas supply pipe and the liquid raw material are always in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container fluctuates. It is a structure that can be controlled.

  In the present invention, a part of the reactive gas supply pipe is in contact with the liquid raw material accommodated in the raw material container, and the reactive gas supply pipe has an opening over a part or the whole of the region in contact with the liquid raw material. Further, even when the remaining amount of the liquid raw material stored in the raw material container changes, the raw material container is controlled so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other (FIG. 16).

  According to a tenth aspect of the present invention, in the vapor phase growth apparatus according to the ninth aspect, the reactive gas supply pipe and the liquid source are always provided even when the remaining amount of the liquid source stored in the source container fluctuates. The structure of the raw material container for enabling control so as to maintain the contacted state is a structure capable of moving the installation position of the raw material container according to the amount of the liquid raw material. Features.

  In the present invention, the reactive gas supply pipe and the liquid material are controlled so as to always maintain a contact state even when the remaining amount of the liquid material stored in the material container fluctuates, according to the amount of the liquid material. Move the location of the material container (not shown).

  According to an eleventh aspect of the present invention, in the vapor phase growth apparatus according to the ninth aspect, the reactive gas supply pipe and the liquid raw material are always provided even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. The structure of the raw material container for enabling control to maintain the contacted state is that the installation angle of the raw material container is adjusted according to the amount of the liquid raw material accommodated in the raw material container. The liquid raw material container has a structure of a raw material container capable of maintaining the liquid level of the liquid raw material substantially constant.

  In the present invention, even when the remaining amount of the liquid raw material stored in the raw material container fluctuates, the amount of the liquid raw material stored in the raw material container is adjusted so that the reactive gas supply pipe and the liquid raw material are always in contact with each other. Accordingly, the installation angle of the raw material container is adjusted, and the liquid level of the liquid raw material is kept substantially constant (FIG. 16).

  According to a twelfth aspect of the present invention, in the vapor phase growth apparatus according to the ninth aspect, the reactive gas supply pipe and the liquid raw material are always provided even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. A liquid level adjusting block installed in contact with the liquid raw material accommodated in the raw material container, wherein the structure of the raw material container for enabling control to maintain the contact state, and the liquid level It is a structure having a position control mechanism for moving the adjustment block in a direction substantially perpendicular to the liquid surface of the liquid raw material.

  In the present invention, even when the remaining amount of liquid raw material stored in the raw material container fluctuates, the liquid level installed in contact with the liquid raw material in order to keep the reactive gas supply pipe and the liquid raw material always in contact with each other The adjustment block is moved in a direction substantially perpendicular to the liquid surface of the liquid raw material by the position control mechanism (FIGS. 11 and 7).

  According to a thirteenth aspect of the present invention, in the vapor phase growth apparatus according to the ninth aspect, the reactive gas supply pipe and the liquid raw material are always provided even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. The structure of the raw material container for enabling control to maintain the contact state is such that a part of the liquid surface of the liquid raw material contained in the raw material container is supplied from the reactive gas supply pipe. A liquid level adjusting block installed in contact with the liquid raw material in the region not exposed to the exposure, and the liquid level adjusting block. It has a position control mechanism that moves in a direction substantially perpendicular to the liquid level.

  In the present invention, in order to keep the reactive gas supply pipe in contact with the liquid raw material even when the remaining amount of the liquid raw material fluctuates, the liquid raw material is contacted in a region not exposed to the reactive gas. A liquid level adjustment block is installed, and this liquid level adjustment block is moved in a direction substantially perpendicular to the liquid level of the liquid raw material by the position control mechanism (FIGS. 11 and 8).

  According to a fourteenth aspect of the present invention, in the vapor phase growth apparatus according to the ninth aspect, the reactive gas supply pipe and the liquid raw material are always provided even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. The structure of the raw material container for enabling control so as to maintain the contact state has a structure having a liquid raw material replenishment mechanism for supplying the liquid raw material from the outside of the reaction container to the inside of the raw material container It is characterized by being.

  In the present invention, in order to keep the reactive gas supply pipe and the liquid source always in contact with each other even when the remaining amount of the liquid source stored in the source container fluctuates, the source is supplied from the outside of the reaction container by the liquid source replenishment mechanism. A liquid raw material is supplied into the container (FIGS. 11 and 9).

  According to a fifteenth aspect of the present invention, in the vapor phase growth apparatus according to the ninth aspect, the reactive gas supply pipe and the liquid raw material are always provided even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. The structure of the raw material container for enabling control to maintain the contact state is such that a part of the liquid surface of the liquid raw material contained in the raw material container is supplied from the reactive gas supply pipe. And a structure having a liquid source replenishment mechanism for supplying the liquid source from the outside of the reaction vessel to the region not exposed to the reactive gas. It is characterized by.

  In the present invention, in a region where the reactive gas supply pipe and the liquid raw material are always in contact with each other even when the remaining amount of the liquid raw material stored in the raw material container fluctuates, the reactive gas is not exposed to the reactive gas. Then, the liquid source is supplied from the outside of the reaction vessel by the liquid source replenishment mechanism (FIGS. 11 and 10).

  A vapor phase growth apparatus according to a sixteenth aspect of the present invention is a reaction vessel that contains a semiconductor substrate, a raw material vessel that contains a liquid raw material installed in the reaction vessel, and is connected to the raw material vessel. Reactive gas supply pipe, at least one or more gas inlets connected to the reaction vessel, a semiconductor substrate installed in the reaction vessel, and a susceptor for holding the semiconductor substrate In the vapor phase growth apparatus provided with a heating source installed outside the reaction vessel and at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, the raw material vessel It has a float lid that is partly in contact with the liquid surface of the liquid raw material housed in and installed so as to float.

  In this invention, it has a float lid | cover installed so that a part might touch the liquid level of the liquid raw material accommodated in the raw material container, and it may float (FIG. 17, FIG. 18).

  The invention according to claim 17 is the vapor phase growth apparatus according to claim 16, characterized in that the structure of the float lid is a structure capable of accommodating a liquid material upward (FIG. 19).

  A vapor phase growth apparatus according to the invention of claim 18 is provided with a reaction vessel for containing a semiconductor substrate, a raw material vessel for containing a liquid raw material installed in the reaction vessel, and a connection to the raw material vessel. Reactive gas supply pipe, at least one or more gas inlets connected to the reaction vessel, a semiconductor substrate installed in the reaction vessel, and a susceptor for holding the semiconductor substrate In the vapor phase growth apparatus provided with a heating source installed outside the reaction vessel and at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, the raw material vessel And a mechanism for moving the movable lid up and down, and a movable lid installed at a predetermined distance above the liquid surface of the liquid raw material accommodated in the container. To do.

  In the present invention, a moving lid is installed above the liquid surface of the liquid raw material stored in the raw material container by a predetermined distance, and the moving lid is moved up and down by the moving mechanism (FIG. 20).

  According to a nineteenth aspect of the present invention, in the vapor phase growth apparatus according to the eighteenth aspect, the structure of the movable lid is a structure that can accommodate a liquid source in the upper part (FIG. 19).

  According to a twentieth aspect of the present invention, there is provided a semiconductor substrate manufacturing method using the vapor phase growth apparatus according to any one of the first to nineteenth aspects.

  A semiconductor substrate according to a twenty-first aspect of the present invention is manufactured using the vapor phase growth apparatus according to the first to nineteenth aspects.

  According to the present invention, since the apparatus structure that can keep the distance between the liquid source contained in the source container of the vapor phase growth apparatus and the reactive gas substantially constant is employed, the growth of the substrate is repeated. Even if it carries out, the effect which can suppress the fall of a growth rate significantly can be acquired.

  Hereinafter, the present invention will be described based on the illustrated embodiments.

[Embodiment 1]
1 and 2 show a first embodiment of the present invention. This is a mechanism for keeping the distance between the reactive gas supply pipe and the liquid surface of the liquid material substantially constant by adjusting the installation angle of the material container according to the amount of the liquid material stored in the material container. This is an example in which a raw material container structure capable of maintaining the liquid surface height of the liquid raw material at a substantially constant level is employed.

  FIG. 1 is a schematic cross-sectional view showing the internal structure of the vapor phase growth apparatus 100 according to the first embodiment.

  The vapor phase growth apparatus 100 includes a quartz reaction furnace (reaction vessel) 101, and a backflow prevention lid 102 for preventing gas backflow inside the reaction furnace 101 is installed at one end of the reaction furnace 101. The other end of the reaction furnace 101 is connected to a gas exhaust system for exhausting gas to the outside through a gas exhaust port. Further, a quartz gas introduction pipe 104 and a reactive gas supply pipe 103 are installed through the backflow prevention lid 102. The reactive gas supply pipe 103 is connected to the reactive gas supply pipe connection port 109 of the raw material container 105 containing the liquid raw material 106. A susceptor 108 is installed on the downstream side in the reaction furnace 101, and a substrate 107 is installed at a predetermined position of the susceptor 108.

  Although not shown in the figure, the gas introduction pipe 104 and the reactive gas supply pipe 103 are each connected to a gas supply system for transporting the source gas from the outside. In addition, a heating source such as a resistance heater is installed outside the reaction furnace 101 so as to surround it.

  FIG. 2 is a bird's-eye schematic view of the raw material container 105 when viewed from obliquely above on the side where the backflow prevention lid 102 is installed in the vapor phase growth apparatus 100 shown in FIG. The cross-sectional shape of the raw material container 105 has a structure in which the depth differs depending on the position. In this example, one side surface 105a is formed in an arc shape and the other side surface 105b is formed in a vertical surface shape, and the cross-sectional area from the lower end toward the upper side is gradually increased. The reactive gas supply pipe connection port 109 is connected at the upper center of one side surface of the raw material container 105 having the above-described cross-sectional shape, and at the upper center corresponding to the other side surface of the raw material container 105 on the opposite side, the precursor gas. A discharge port 110 is provided. And the raw material container 105 becomes a structure which can be rotated to arbitrary angle positions centering | focusing on the centerline of the reactive gas supply pipe connection port 109 and the precursor gas discharge port 110 which exist on this coaxial line. Yes.

  A reactive gas is introduced into the inside of the raw material container 105 from a reactive gas supply pipe 103 connected to a reactive gas supply pipe connection port 109, and this reactive gas is chemically formed on the surface of the liquid raw material 106. By reacting, a group III precursor is generated and discharged into the reaction furnace 101 through the precursor gas discharge port 110.

  A thin film forming method using this vapor phase growth apparatus 100 will be described.

  FIG. 3 is a schematic cross-sectional view when the installation angle of the raw material container 105 is changed according to the amount of the liquid raw material 106 accommodated in the raw material container 105. Although not shown in the drawing, the position of the precursor gas discharge port 110 is provided so as to overlap the position of the reactive gas supply pipe connection port 109 projected in the horizontal direction.

  First, when the remaining amount of the liquid raw material 106 is the largest, the angle (installation angle) at which the depth of the raw material container 105 when viewed from the reactive gas supply pipe connection port 109 is almost maximum as shown in FIG. A raw material container is installed so that Specifically, the set angle is determined so that the tip (the joining tip of both side surfaces 105a and 105b) 105c located farthest from the rotation center (reactive gas supply pipe connection port 109) is the lowest end.

  Next, when the remaining amount of the liquid raw material 106 is reduced by supplying the reactive gas to grow the substrate, when viewed from the reactive gas supply pipe connection port 109 as shown in FIG. By tilting the installation angle of the raw material container 105 so that the depth of the raw material container 105 becomes shallow, the distance between the reactive gas supply pipe connection port 109 and the liquid surface of the liquid raw material 106 can be kept substantially constant. Specifically, the position of the tip 105c is slightly raised so that the side surface 105a bent in an arc shape is on the lower side.

  When the remaining amount of the liquid raw material 106 further decreases, the raw material container 105 is further tilted as shown in FIG. 3C, so that the distance between the reactive gas supply pipe connection port 109 and the liquid surface of the liquid raw material 106 again. Can be kept almost constant. Specifically, the position of the tip 105c is further raised with the side surface 105a bent in an arc shape being in the lower side.

[Embodiment 2]
Next, FIG. 4 shows a schematic diagram when a structure having a cross-sectional shape different from the structure of the raw material container 105 shown in FIG. 3 is applied as the second embodiment of the present invention. This is because, even when the remaining amount of the liquid raw material stored in the raw material container fluctuates, the shape of the space through which the reactive gas introduced into the raw material container from the reactive gas supply pipe passes inside the raw material container is roughly This is an example of adopting a structure of a raw material container that can be controlled to be constant.

  In FIG. 4, the raw material container 105 has an upper chamber having a head wall 105d having an arc-shaped cross section, and a lower chamber having a leg wall 105e having a rectangular cross section following the upper chamber, and one of the head wall 105d and the leg wall 105e. From the connecting boundary, an arc-shaped partition plate 111 is provided so as to protrude inward as a continuous head wall 105d, and the partition plate 111 and the head wall 105d are provided so as to form a substantially identical circle. Yes.

  As described above, the partition plate 111 is installed so as to be connected to the wall surface of the raw material container 105, and the partition plate 111 is installed so that the whole or a part of the partition plate 111 is embedded in the liquid raw material 106. Further, the upper wall surface of the raw material container 105 and the partition plate 111 form a substantially cylindrical cross-sectional shape around the reactive gas supply pipe connection port 109.

  When the substrate is grown using the raw material container 105, immediately after the liquid raw material 106 is first filled in the raw material container 105, the raw material is placed at a position (a position where the leg wall 105e is vertical) as shown in FIG. A container 105 is installed. Next, when the remaining amount of the liquid raw material 106 decreases, the installation angle of the raw material container 105 is adjusted to an inclined position where the leg wall 105e is inclined as shown in FIG. The distance between the surface and the reactive gas supply pipe connection port 109 is made substantially constant. When the liquid source 106 further decreases, as shown in FIG. 4C, the installation angle of the source container 105 is adjusted so that the leg wall 105e is in a horizontal position or an inclined position approaching the leg wall 105e. The distance between the liquid level and the reactive gas supply pipe connection port 109 is made substantially constant.

  In addition, as a method of adjusting the installation angle of the raw material container 105 described in the embodiment of FIGS. 1 to 4, the raw material container 105 and the reactive gas supply pipe 103 are fixed at the reactive gas supply pipe connection port 109. If the reactive gas supply pipe 103 is rotated from the outside, the installation angle can be adjusted. On the other hand, when the raw material container 105 and the reactive gas supply pipe 103 are not fixed by the reactive gas supply pipe connection port 109 and can be moved independently of each other, for example, the outer periphery of the reactive gas supply pipe 103 is surrounded. It is also possible to adjust the installation angle of the raw material container 105 by connecting the installed cylindrical tube to the raw material container 105 and rotating the cylindrical tube.

  Thus, as in the first and second embodiments, the liquid source 106 is adjusted from the position where the reactive gas is introduced by adjusting the installation angle of the source container 105 having a predetermined shape according to the remaining amount of the liquid source 106. Because the distance to the liquid surface can be kept almost constant, the amount of group III precursors generated can be stabilized, and the decrease in growth rate due to repeated substrate growth can be greatly suppressed. It becomes.

  In particular, in the structure of FIG. 4 (Embodiment 2), since the shape of the space through which the reactive gas passes can be made almost constant, the state of gas flow in this space can be kept almost constant, and the group III It is possible to further stabilize the amount of the precursor produced.

  As a modification of the second embodiment, FIG. 5 shows a case where the distance from the reactive gas supply pipe connection port 109 is extended in a region farther than the partition plate 111 in the structure of the raw material container 105 shown in FIG. The structure is shown. According to the structure of the raw material container 105, a larger amount of liquid raw material 106 can be accommodated. Therefore, it is possible to provide a vapor phase growth apparatus capable of stably performing more substrate growth with a single replenishment of the liquid material.

[Embodiment 3]
FIG. 6 shows a third embodiment of the present invention. This is a structure of the raw material container that controls the shape of the space through which the reactive gas passes inside the raw material container, and a liquid level adjustment block installed in contact with the liquid raw material contained in the raw material container; This is an example employing a structure having a position control mechanism for moving the liquid level adjustment block in a direction substantially perpendicular to the liquid level of the liquid raw material.

  That is, FIG. 6 is a schematic cross-sectional view showing the internal structure of the vapor phase growth apparatus 200 according to the third embodiment of the present invention. The vapor phase growth apparatus 200 has a quartz reaction furnace 101, and a backflow prevention lid 102 is installed at one end of the reaction furnace 101, and the other end of the reaction furnace 101 discharges gas to the outside. Connected to the gas exhaust system for. Further, a quartz gas introduction pipe 104 and a reactive gas supply pipe 103 are installed through the backflow prevention lid 102. The reactive gas supply pipe 103 is connected to a reactive gas supply pipe connection port 109 of a box-shaped raw material container 105 containing a liquid raw material 106.

  A raw material container lid 114 is installed on the upper part of the raw material container 105. Further, the liquid level adjustment block 112 is installed so as to come into contact with the liquid raw material 106 through an opening provided in the raw material container lid 114, and further, a block moving mechanism for moving the liquid level adjustment block 112 up and down ( (Position control mechanism) 113 is installed. A susceptor 108 and a substrate 107 are installed on the downstream side in the reaction furnace 101.

  Although not shown in the figure, the gas introduction pipe 104 and the reactive gas supply pipe 103 are each connected to a gas supply system for transporting the source gas from the outside. In addition, a heating source such as a resistance heater is installed outside the reaction furnace 101 so as to surround it.

  FIG. 7 is a bird's-eye schematic view of the raw material container 105 and the surrounding structure in the vapor phase growth apparatus 200 shown in FIG. 6 when viewed from obliquely above on the side where the backflow prevention lid 102 is installed. The liquid level adjustment block 112 has a material or a structure that can float on the liquid surface of the liquid raw material 106. The block moving mechanism 113 includes a cam 113a that contacts the upper part of the liquid level adjusting block 112 and immerses the lower part or the whole of the liquid level adjusting block 112 in the liquid raw material 106, and a shaft portion 113b that rotates the cam.

  The elliptical cam 113a portion of the block moving mechanism 113 is placed in contact with the upper portion of the liquid level adjusting block 112, and the position of the liquid level adjusting block 112 is rotated by rotating the shaft portion 113b of the block moving mechanism 113. Can be moved up and down in the vertical direction.

  A thin film forming method using this vapor phase growth apparatus 200 will be described.

  First, when the remaining amount of the liquid raw material 106 is the largest, the amount (immersion amount) of pushing the liquid level adjustment block 112 in the depth direction from the liquid surface of the liquid raw material 106 is reduced. Next, when the liquid raw material 106 is consumed by supplying the reactive gas to grow the substrate and the remaining amount is reduced, the angle of the block moving mechanism 113 is appropriately adjusted to adjust the liquid level adjustment block 112. By increasing the pushing amount (dipping amount), the liquid surface height of the liquid raw material 106 is maintained at the same position as before the liquid raw material 106 is reduced.

  By the way, in the structure of FIG. 7, since the reactive gas and the liquid level adjustment block 112 are in direct contact, depending on the material of the liquid level adjustment block 112, deterioration due to the reactive gas can be considered, and the liquid level adjustment block 112 and the raw material container If there is a gap between the lid 114 and the lid 114, the reactive gas may flow out of the reactor 101.

  In order to prevent these, for example, as shown in FIG. 8, a raw material container side tube 115 is provided at the bottom of a region of the raw material container 105 in which the liquid raw material 106 is accommodated in an L-shaped form. The liquid level adjustment block 112 is installed in a region where the liquid level of the liquid raw material 106 inside the raw material container side pipe 115 is exposed, and the liquid level adjustment block 112 is moved up and down by the block moving mechanism 113 configured in the same manner as described above. By doing so, the liquid level height of the liquid raw material 106 inside the raw material container 105 can be kept constant.

  As another method for adjusting the installation position of the liquid level adjustment block 112 described above, for example, the liquid level adjustment block 112 and the block moving mechanism 113 are directly connected and fixed, and these are connected to the outside of the reaction furnace 101. It is also possible to move up and down by another moving mechanism provided in.

  In this way, the liquid level of the liquid source 106 can be adjusted from the position where the reactive gas is introduced by adjusting the position of the liquid level adjustment block 112 installed in contact with the liquid source 106 accommodated in the source container 105. Therefore, the amount of the group III precursor generated can be stabilized, and the decrease in the growth rate due to repeated growth of the substrate can be significantly suppressed.

[Embodiment 4]
Next, as a fourth embodiment, an embodiment having a liquid source replenishing mechanism for supplying a liquid source from the outside of the reaction vessel to the inside of the source vessel will be described.

  FIG. 9 is a schematic cross-sectional view showing the internal structure of the vapor phase growth apparatus 300 according to the fourth embodiment of the present invention.

  The vapor phase growth apparatus 300 includes a quartz reaction furnace 101 and a backflow prevention lid 102 installed at one end of the reaction furnace 101, and the other end of the reaction furnace 101 discharges gas to the outside. Connected to the gas exhaust system for. Further, a quartz gas introduction pipe 104 and a reactive gas supply pipe 103 are installed through the backflow prevention lid 102. The reactive gas supply pipe 103 is connected to a reactive gas supply pipe connection port 109 of a box-shaped raw material container 105 containing a liquid raw material 106, and a raw material container lid 114 is installed above the raw material container 105. Has been.

  Further, a liquid source supply pipe 116 of a liquid source replenishing mechanism is installed through an opening provided in the source container lid 114. A susceptor 108 and a substrate 107 are installed on the downstream side in the reaction furnace 101.

  Although not shown in the figure, the gas introduction pipe 104 and the reactive gas supply pipe 103 are each connected to a gas supply system for transporting the source gas from the outside. The liquid source supply pipe 116 is connected to a liquid source supply system for transporting the liquid source from the outside. In addition, a heating source such as a resistance heater is installed outside the reaction furnace 101 so as to surround it.

  According to the vapor phase growth apparatus 300 shown in FIG. 9, the liquid material 106 can be replenished to the material container 105 through the liquid material supply pipe 116 from the outside of the reaction furnace 101 according to the decrease amount of the liquid material 106. The liquid surface height of the liquid raw material 106 can be made constant.

  By the way, when the liquid source supply pipe 116 is directly connected to the space to which the reactive gas is supplied, there is a possibility that the reactive gas flows backward from the liquid source supply pipe 116. In order to prevent this, for example, as shown in FIG. 10, a raw material container side pipe 115 connected in an L shape to the bottom of the region of the raw material container 105 in which the liquid raw material 106 is accommodated is provided. The liquid source supply pipe 116 is installed in a region where the liquid surface of the liquid source 106 inside is exposed, that is, a region where the liquid source 106 is not exposed to the reactive gas, and the liquid source 106 is replenished from here. The liquid level of the liquid raw material 106 can be kept constant.

  Thus, by providing the liquid source supply pipe 116 for replenishing the liquid source 106 in the source container 105, the distance from the position where the reactive gas is introduced to the liquid surface of the liquid source 106 is kept substantially constant. Therefore, the production amount of the group III precursor can be stabilized, and a decrease in growth rate due to repeated substrate growth can be greatly suppressed.

[Embodiment 5]
FIG. 11 is a schematic cross-sectional view showing the internal structure of a vapor phase growth apparatus 400 according to the fifth embodiment of the present invention. This is because the reactive gas supply pipe is partly in contact with the liquid raw material accommodated in the raw material container, and the reactive gas supply pipe has an opening over part or all of the region in contact with the liquid raw material. This is an example of a gas supply pipe structure.

  The vapor phase growth apparatus 400 includes a quartz reaction furnace 101 and a backflow prevention lid 102 installed at one end of the reaction furnace 101, and the other end of the reaction furnace 101 discharges gas to the outside. Connected to the gas exhaust system for. Further, a quartz gas introduction pipe 104 and a reactive gas supply pipe 103 are installed through the backflow prevention lid 102. A susceptor 108 and a substrate 107 are installed on the downstream side in the reaction furnace 101.

  FIG. 12 is a bird's-eye schematic view of the vapor phase growth apparatus 400 shown in FIG. 11 when the raw material container 105 is viewed from obliquely above on the side where the backflow prevention lid 102 is installed. A part of the reactive gas supply pipe 103 is bent downward in a crank shape, and a lower side portion thereof is in contact with the liquid surface of the liquid raw material 106 accommodated in the raw material container 105 and is completely in the liquid raw material 106. The installation position has been adjusted so that it is not buried.

  FIG. 13 shows a cross-sectional structure in a region where the reactive gas supply pipe 103 is in contact with the liquid raw material 106, but the reactive gas supply pipe 103 has an opening in a part of the region in contact with the liquid raw material 106 or in the whole. The liquid raw material 106 enters the reactive gas supply pipe 103 by completely burying the opening in the liquid raw material 106. At this time, a space surrounded by the reactive gas supply pipe 103 and the liquid surface of the liquid raw material 106 becomes the reactive gas passage region 117.

  Although not shown in the figure, the gas introduction pipe 104 and the reactive gas supply pipe 103 are each connected to a gas supply system for transporting the source gas from the outside. The reactive gas supply pipe 103 is externally connected to a moving mechanism for moving the reactive gas supply pipe 103 in the vertical direction. In addition, a heating source such as a resistance heater is installed outside the reaction furnace 101 so as to surround it.

  A thin film forming method using this vapor phase growth apparatus 400 will be described.

  First, in a state where the remaining amount of the liquid raw material 106 is the largest (when the liquid level is high), the opening provided in the reactive gas supply pipe 103 is buried in the liquid raw material 106 as shown in FIG. The position of the reactive gas supply pipe 103 is adjusted. At this time, the reactive gas introduced for substrate growth passes through the reactive gas passage region 117 and is introduced into the reaction furnace 101 from one end of the reactive gas supply pipe 103.

  Thereafter, when the remaining amount of the liquid raw material 106 decreases, the reactive gas supply pipe 103 is also lowered in accordance with the descending amount of the liquid level as shown in FIG. Thus, the shape of the reactive gas passage region 117 is made constant. At this time, since the distance between the reactive gas and the liquid surface of the liquid raw material 106 is also constant, the amount of group III precursor produced can be stabilized, and the growth rate is greatly reduced by repeated substrate growth. Can be suppressed.

  In this embodiment, the case where the reactive gas supply pipe 103 is moved up and down has been described. However, the raw material container 105 may be moved by connecting a vertical movement mechanism, and the reactive gas supply pipe 103 and the raw material container may be moved. A vertical movement mechanism may be connected to both 105 and moved.

  Further, the shape of the reactive gas supply pipe 103 is not limited to the structure shown in FIG. 12. For example, as shown in FIG. 14, the reactive gas supply pipe 103 is layered in a direction in contact with the liquid surface of the liquid raw material 106. Of course, a structure that can be folded is also acceptable.

  By the way, when the shape of the reactive gas supply pipe 103 has a crank shape as shown in FIG. 12, the reactive gas supply pipe 103 is rotated and the tip end portion of the L-shaped crank portion is rotated. The same effect can be obtained. FIG. 15 shows a cross-sectional structure when the reactive gas supply pipe 103 shown in FIG. 12 rotates around a portion not in contact with the liquid raw material 106.

  First, when the remaining amount of the liquid raw material 106 is large, as shown in FIG. 15A, the L-shaped crank portion of the gas supply pipe is installed at a rotation angle (a state where the rotation angle is small) at which the L-shaped crank portion is nearly horizontal. Yes. Thereafter, as the remaining amount of the liquid source 106 decreases, the reactive gas supply pipe 103 comes into contact with the surface of the liquid source 106 and the shape of the reactive gas passage region 117 as shown in FIG. While maintaining a constant state, the rotation angle of the reactive gas supply pipe 103 is adjusted to gradually increase. Even in such a structure, since the distance between the reactive gas and the liquid surface of the liquid raw material 106 can be made constant, it is possible to stabilize the production amount of the group III precursor.

[Embodiment 6]
Furthermore, the same effect can be obtained by combining the raw material container 105 and the reactive gas supply pipe 103 described in the above embodiments.

  FIG. 16 shows a cross-sectional structure when the raw material container 105 shown in FIG. 5 and the reactive gas supply pipe 103 shown in FIG. 14 are combined. Although not shown in the figure, the reactive gas supply pipe 103 is not fixed to the reactive gas supply pipe connection port 109 but is drawn into the raw material container 105, and the end portion of the reactive gas supply pipe 103 is drawn. Is opened in the raw material container 105 or drawn into the reaction furnace 101 through the precursor gas discharge port 110, and the raw material container 105 is independent of the reactive gas supply pipe. It has a structure that can be rotated.

  According to this structure, when there are many liquid raw materials 106, it adjusts so that it may become a position like FIG. 16 (a), and as the liquid raw material 106 decreases, the angle of the raw material container 105 is rotated as shown in FIG. 16 (b). If the liquid material 106 further decreases, the angle of the material container 105 may be further rotated as shown in FIG. Even with such a structure, since the distance between the reactive gas and the liquid surface of the liquid raw material 106 can be made constant, it is possible to stabilize the generation amount of the group III precursor.

[Embodiment 7]
FIG. 17 is a schematic cross-sectional view showing the internal structure of a vapor phase growth apparatus 500 according to the seventh embodiment of the present invention. This is an example having a float lid that is partly in contact with the liquid surface of the liquid raw material contained in the raw material container and installed so as to float.

  The vapor phase growth apparatus 500 includes a quartz reaction furnace 101, and a backflow prevention lid 102 is installed at one end of the reaction furnace 101. The other end of the reaction furnace 101 discharges gas to the outside. Connected to the gas exhaust system for. Further, a quartz gas introduction pipe 104 and a reactive gas supply pipe 103 are installed through the backflow prevention lid 102. The reactive gas supply pipe 103 is connected to a reactive gas supply pipe connection port 109 of a box-shaped raw material container 105 containing a liquid raw material 106, and a raw material container lid 114 is installed above the raw material container 105. Has been. A float lid 118 is installed in the raw material container 105 so as to float on the liquid surface of the liquid raw material 106. Further, a susceptor 108 and a substrate 107 are installed on the downstream side in the reaction furnace 101.

  FIG. 18 shows a cross-sectional structure of the raw material container 105 and the float lid 118 in the AB cross section shown in FIG. The float lid 118 is provided with a downwardly convex boat-shaped portion 118a, and the structure 118a is designed so as to play a role of floating on the liquid surface of the liquid raw material 106. At this time, the reactive gas introduced into the raw material container 105 passes through the reactive gas passage region 117 surrounded by the float lid 118, the liquid raw material 106, and the side wall of the raw material container 105, and passes through the precursor gas discharge port 110. It is introduced into the reaction furnace 101.

  According to such a structure, even when the liquid raw material 106 is reduced, the distance from the float lid 118 that has floated to the liquid surface can be kept constant, so that the reactive gas and the liquid surface of the liquid raw material 106 Can be kept constant, and by stabilizing the amount of group III precursor produced, it is possible to greatly suppress a decrease in the growth rate of the substrate.

  Since the float lid 118 needs to move smoothly in response to the change in the liquid level, it is necessary to provide a slight gap with the side wall of the raw material container 105. At this time, a small amount of reactive gas is generated. It is conceivable to flow into the reactor 101 through the upper portion of the float lid 118 without being reacted. Therefore, as shown in FIG. 19, an auxiliary raw material container 119 is installed on the upper side of the float lid 118 so that the reactive gas passing above the float lid 118 can be reacted. It is effective in stabilizing.

  Further, when a problem such as deterioration of the float lid 118 or contamination of the liquid raw material 106 due to the float lid 118 coming into contact with the liquid raw material 106 is assumed, the position of the float lid 118 is changed as shown in FIG. A similar effect can be obtained by installing a float lid displacement mechanism 120 for adjustment from the outside connected to the float lid 118 and adjusting the float lid 118 so that the distance from the liquid surface of the liquid raw material 106 is constant. is there.

1 is a schematic vertical sectional view showing the structure of a vapor phase growth apparatus according to a first embodiment of the present invention. It is a bird's-eye schematic which shows the shape of the raw material container of 1st embodiment of this invention. FIG. 3 shows how the raw material container of FIG. 2 is used, in which (a) shows a case where the liquid level is high, (b) shows a case where the liquid level falls, and (c) shows a case where the liquid level is low. FIG. The structure of the raw material container which concerns on 2nd embodiment of this invention, and its usage aspect are shown, (a) when a liquid level is high, (b) when a liquid level falls, (c) FIG. 3 is a schematic vertical sectional view showing a case where the liquid level is low. It is the vertical cross-sectional schematic of the modification of the raw material container which concerns on 2nd embodiment of this invention. It is the vertical cross-sectional schematic which shows the structure of the vapor phase growth apparatus which concerns on 3rd embodiment of this invention. It is a bird's-eye schematic diagram which shows the structure of the liquid level adjustment block and block movement mechanism (position control mechanism) in 3rd embodiment of this invention. It is a bird's-eye schematic which shows the structure of the raw material container in 3rd embodiment of this invention. It is a cross-sectional schematic diagram which shows the internal structure of the vapor phase growth apparatus which concerns on 4th embodiment of this invention. It is the bird's-eye schematic which shows the structural example of the raw material container in 4th embodiment of this invention. It is the vertical cross-sectional schematic which showed the structure of the vapor phase growth apparatus which concerns on 5th embodiment of this invention. It is the bird's-eye schematic which showed the structure of the raw material container in 5th embodiment of this invention. The relationship between the opening part of the reactive gas supply pipe | tube in 5th embodiment of this invention and the liquid level of a liquid raw material is shown, (a) is a liquid level high, (b) is a liquid level It is a figure which shows the case where a level is low. In 5th embodiment of this invention, it is a bird's-eye schematic view of the raw material container which shows the structure which bent the reactive gas supply pipe | tube along the liquid level of the liquid raw material several times. In 5th embodiment of this invention, it is sectional drawing which showed the case where a reactive gas supply pipe was rotated, (a) is a case where a liquid level is high, (b) is a figure which shows a case where a liquid level is low. It is. The relationship between the opening part of the reactive gas supply pipe in the sixth embodiment of the present invention and the rotation angle of the raw material container with respect to the liquid level of the liquid raw material is shown, and (a) shows a case where the liquid level is high. (B) is a figure which shows the case where a liquid level falls, (c) is a figure which shows the case where a liquid level is low. It is the vertical cross-sectional schematic which showed the structure of the vapor phase growth apparatus which concerns on the 7th embodiment of this invention. It is AB sectional drawing of the raw material container of FIG. It is a bird's-eye schematic showing the state where the auxiliary material container was installed above the float lid in the seventh embodiment of the present invention. It is the vertical cross-sectional schematic which shows the modification of the vapor phase growth apparatus of the 7th embodiment of this invention.

Explanation of symbols

101 reactor (reaction vessel)
102 Backflow prevention cover 103 Reactive gas supply pipe 104 Gas introduction pipe 105 Raw material container 106 Liquid raw material 107 Substrate 108 Susceptor 109 Reactive gas supply pipe connection port 110 Precursor gas discharge port 111 Partition plate 112 Liquid level adjustment block 113 Block moving mechanism 114 Raw material container lid 115 Raw material container side pipe 116 Liquid raw material supply pipe 117 Reactive gas passage region 118 Float lid 118a Boat-shaped portion 119 Auxiliary raw material container 120 Float lid displacement mechanism

Claims (21)

A reaction vessel containing a semiconductor substrate, a raw material vessel installed inside the reaction vessel for containing a liquid raw material, a reactive gas supply pipe installed connected to the raw material vessel, and the reaction vessel At least one or more gas inlets installed in a connected manner, a semiconductor substrate installed inside the reaction vessel, a susceptor for holding the semiconductor substrate, and a heating source installed outside the reaction vessel And a vapor phase growth apparatus provided with at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside,
A mechanism for maintaining a substantially constant distance between the reactive gas supply pipe and the liquid surface of the liquid material, the mechanism depending on the amount of the liquid material stored in the material container; A vapor phase growth apparatus characterized by having a structure of a raw material container capable of maintaining the liquid surface height of the liquid raw material substantially constant by adjusting an installation angle of the container. A reaction vessel containing a semiconductor substrate, a raw material vessel installed inside the reaction vessel for containing a liquid raw material, a reactive gas supply pipe installed connected to the raw material vessel, and the reaction vessel At least one or more gas inlets installed in a connected manner, a semiconductor substrate installed inside the reaction vessel, a susceptor for holding the semiconductor substrate, and a heating source installed outside the reaction vessel And a vapor phase growth apparatus provided with at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside,
Even when the remaining amount of the liquid raw material stored in the raw material container fluctuates in the structure of the raw material container, the reactive gas introduced into the raw material container from the reactive gas supply pipe is not in the raw material container. A vapor phase growth apparatus characterized by having a structure of a raw material container capable of controlling the shape of a space passing therethrough substantially uniformly. The vapor phase growth apparatus according to claim 2,
The structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes in the inside of the raw material container is substantially constant,
It is a structure of a raw material container capable of maintaining the liquid surface height of the liquid raw material substantially constant by adjusting the installation angle of the raw material container according to the amount of the liquid raw material accommodated in the raw material container. A vapor phase growth apparatus characterized by that. The vapor phase growth apparatus according to claim 2,
The structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes in the inside of the raw material container is substantially constant,
A structure having a liquid level adjustment block installed in contact with the liquid raw material contained in the raw material container, and a position control mechanism for moving the liquid level adjustment block in a direction substantially perpendicular to the liquid level of the liquid raw material A vapor phase growth apparatus characterized by the above. The vapor phase growth apparatus according to claim 2,
The structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes in the inside of the raw material container is substantially constant,
A region in which a part of the liquid surface of the liquid source contained in the source container is provided with a region not exposed to the reactive gas supplied from the reactive gas supply pipe, and the region not subjected to the exposure A liquid level adjusting block installed in contact with the liquid source, and a position control mechanism for moving the liquid level adjusting block in a direction substantially perpendicular to the liquid level of the liquid source. Vapor growth equipment. The vapor phase growth apparatus according to claim 2,
The structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes in the inside of the raw material container is substantially constant,
A vapor phase growth apparatus having a structure having a liquid source replenishment mechanism for supplying the liquid source into the source vessel from the outside of the reaction vessel. The vapor phase growth apparatus according to claim 2,
The structure of the raw material container for controlling the shape of the space through which the reactive gas introduced into the raw material container passes in the inside of the raw material container is substantially constant,
A region in which a part of the liquid surface of the liquid source contained in the source container is provided with a region not exposed to the reactive gas supplied from the reactive gas supply pipe, and the region not subjected to the exposure A vapor phase growth apparatus characterized by having a liquid source replenishment mechanism for supplying the liquid source from the outside of the reaction vessel. A reaction vessel containing a semiconductor substrate, a raw material vessel for containing a liquid raw material installed in the reaction vessel, a reactive gas supply pipe installed in the reaction vessel, and connected to the reaction vessel At least one gas inlet installed in the reactor, a semiconductor substrate installed inside the reaction vessel, a susceptor for holding the semiconductor substrate, and a heating source installed outside the reaction vessel; In the vapor phase growth apparatus provided with at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside,
The structure of the reactive gas supply pipe is such that a part of the reactive gas supply pipe is in contact with the liquid raw material accommodated in the raw material container, and the reactive gas supply pipe is in contact with the liquid raw material. A vapor phase growth apparatus characterized by having an opening part in part or in whole. A reaction container for containing a semiconductor substrate, a raw material container for containing a liquid raw material installed in the reaction container, a reactive gas supply pipe installed in the reaction container, and a connection to the reaction container And at least one gas inlet, a semiconductor substrate installed inside the reaction vessel, a susceptor for holding the semiconductor substrate, and a heating source installed outside the reaction vessel, , Comprising at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside, wherein the structure of the reactive gas supply pipe is such that a part of the reactive gas supply pipe is provided in the raw material vessel. In the vapor phase growth apparatus that has an opening over a part or the whole of the region that is in contact with the liquid source to be accommodated and the reactive gas supply pipe is in contact with the liquid source,
The structure of the raw material container is controlled so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material stored in the raw material container fluctuates. A vapor phase growth apparatus characterized by having a structure that enables the above. The vapor phase growth apparatus according to claim 9.
The raw material for enabling control so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container changes. The container structure is
A vapor phase growth apparatus characterized by having a structure capable of moving an installation position of the raw material container in accordance with the amount of the liquid raw material. The vapor phase growth apparatus according to claim 9.
The raw material for enabling control so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container changes. The container structure is
It is a structure of a raw material container capable of maintaining the liquid surface height of the liquid raw material substantially constant by adjusting the installation angle of the raw material container according to the amount of the liquid raw material accommodated in the raw material container. A vapor phase growth apparatus characterized by that. The vapor phase growth apparatus according to claim 9.
The raw material for enabling control so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container changes. The container structure is
A structure having a liquid level adjustment block installed in contact with the liquid raw material contained in the raw material container, and a position control mechanism for moving the liquid level adjustment block in a direction substantially perpendicular to the liquid level of the liquid raw material A vapor phase growth apparatus characterized by the above. The vapor phase growth apparatus according to claim 9.
The raw material for enabling control so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container changes. The container structure is
A region in which a part of the liquid surface of the liquid source contained in the source container is provided with a region not exposed to the reactive gas supplied from the reactive gas supply pipe, and the region not subjected to the exposure A gas level adjustment block installed in contact with the liquid source, and a position control mechanism for moving the liquid level adjustment block in a direction substantially perpendicular to the liquid level of the liquid source. Growth equipment. The vapor phase growth apparatus according to claim 9.
The raw material for enabling control so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container changes. The container structure is
A vapor phase growth apparatus having a structure having a liquid source replenishment mechanism for supplying the liquid source into the source vessel from the outside of the reaction vessel. The vapor phase growth apparatus according to claim 9.
The raw material for enabling control so that the reactive gas supply pipe and the liquid raw material are always kept in contact with each other even when the remaining amount of the liquid raw material accommodated in the raw material container changes. The container structure is
A region in which a part of the liquid surface of the liquid source contained in the source container is provided with a region not exposed to the reactive gas supplied from the reactive gas supply pipe, and the region not subjected to the exposure A vapor phase growth apparatus characterized by having a liquid source replenishment mechanism for supplying the liquid source from the outside of the reaction vessel. A reaction vessel containing a semiconductor substrate, a raw material vessel installed inside the reaction vessel for containing a liquid raw material, a reactive gas supply pipe installed connected to the raw material vessel, and the reaction vessel At least one or more gas inlets installed in a connected manner, a semiconductor substrate installed inside the reaction vessel, a susceptor for holding the semiconductor substrate, and a heating source installed outside the reaction vessel And a vapor phase growth apparatus provided with at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside,
A vapor phase growth apparatus characterized by having a float lid that is partly in contact with the liquid surface of the liquid raw material contained in the raw material container and installed so as to float. The vapor phase growth apparatus according to claim 16,
The structure of the float lid is a structure capable of accommodating a liquid raw material in the upper part, and a vapor phase growth apparatus characterized by the above. A reaction vessel containing a semiconductor substrate, a raw material vessel installed inside the reaction vessel for containing a liquid raw material, a reactive gas supply pipe installed connected to the raw material vessel, and the reaction vessel At least one or more gas inlets installed in a connected manner, a semiconductor substrate installed inside the reaction vessel, a susceptor for holding the semiconductor substrate, and a heating source installed outside the reaction vessel And a vapor phase growth apparatus provided with at least one gas exhaust port for discharging gas from the inside of the reaction vessel to the outside,
It has a moving lid installed at a predetermined distance above the liquid surface of the liquid raw material accommodated in the raw material container, and has a mechanism for moving the moving lid up and down. A vapor phase growth apparatus characterized by the above. The vapor phase growth apparatus according to claim 18,
The structure of the moving lid is a structure capable of accommodating a liquid raw material in the upper part, and a vapor phase growth apparatus characterized by the above.   A method for manufacturing a semiconductor substrate, wherein the manufacturing method is performed using the vapor phase growth apparatus according to claim 1.   A semiconductor substrate manufactured using the vapor phase growth apparatus according to claim 1.

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