JP2006108323A - Inductance element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized inductance element in which wiring resistance and floating capacity are small. <P>SOLUTION: This inductance element comprises wiring 2 for connecting an inductor with front and rear circuit elements, lead-out wiring 3 for connecting a metal wire 5 with the wiring 2, a plurality of metal lands 4, and a plurality of metal wires 5 which form an air bridge and are electrically connected to one another. The wiring 2, the lead-out wiring 3 and the metal land 4 are formed on a substrate 1, and the plurality of metals 5 are sequentially connected in a spiral state via the metal lands 4 by wire bonding. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an inductance element applicable to a high frequency circuit in a wireless communication system.

  In recent years, information communication plays an extremely important role, and the demand for wireless communication systems is rapidly increasing. Under such circumstances, mobile phones and cordless phones are strongly required to be small and low price, not to mention low power consumption and high performance.

  Circuit elements necessary for a high-frequency circuit such as a cellular phone include active elements such as transistors and passive elements such as capacitors, resistance elements, and inductance elements. As a technique for forming a monolithic microwave integrated circuit (referred to as MMIC) by forming active elements and passive elements on the same semiconductor substrate, for example, there is a hybrid semiconductor integrated circuit described in Patent Document 1. In this hybrid semiconductor integrated circuit, a high-Q spiral inductor as an inductance element is formed on a semiconductor substrate such as ceramic by a printing technique or the like.

  FIG. 8 is a diagram showing a configuration of a spiral inductor in the hybrid semiconductor integrated circuit described in Patent Document 1. In FIG. As shown in FIG. 8, the spiral inductor is composed of an outer wiring 61, a spiral wiring 62, and a lead wiring 63 for connecting the spiral wiring 62 in the center portion to the outer wiring 61.

FIG. 9 is an equivalent circuit of a spiral inductor. The equivalent circuit includes a wiring capacitance 41, wiring ground capacitances 42 and 43, a wiring resistance 44, and an inductance 45 due to the spiral wiring 62.
JP-A-5-251629

  However, the spiral inductor of the hybrid semiconductor integrated circuit described in Patent Document 1 forms a wiring on a semiconductor substrate such as ceramic by a printing technique or the like. In the printing technique, it is difficult to form a wiring having a film thickness of 5 microns or more, so that it is difficult to reduce the resistance value per unit wiring width, and the wiring resistance 44 is increased. In addition, it is difficult to form a wiring pattern with a wiring width of 75 microns or less with high accuracy, and to form a pattern with high accuracy with a space between wirings of 75 microns or less, and it is difficult to reduce the size of the inductance element. There is also. Furthermore, there is a problem that the contact area between the wiring and the substrate becomes large, and the ground capacitances 42 and 43 of the wiring are large. Further, the wiring width becomes as large as 100 microns or more, for example, and there is a problem that a large wiring capacity is generated.

  Further, in order to prevent contact between the spiral wiring 62 and the lead-out wiring 63, the spiral wiring 62 and the lead-out wiring 63 are formed in different wiring layers. Therefore, there is a problem that an interwiring capacitance is generated at the intersection between the spiral wiring 62 and the lead wiring 63 and the interwiring capacitance 41 is increased.

  That is, the conventional inductance element has a problem that wiring resistance and stray capacitance are large and it is difficult to reduce the size.

  In view of the above problems, an object of the present invention is to provide a small inductance element having a small wiring resistance and stray capacitance. That is, an object of the present invention is to provide an inductance element that is small and has good characteristics.

  In order to solve the above problems, the inductance element of the present invention is characterized by including a plurality of connected metal wires. Here, the inductance element further includes a metal land, which is a region formed of metal, disposed on a substrate on which the metal wire is disposed, and the plurality of metal wires are interposed via the metal land. The plurality of metal wires may be connected in a spiral shape, or the plurality of metal wires may be connected in a vertical winding shape.

  As a result, the wiring width and the wiring interval are not subject to manufacturing restrictions, and the resistance per unit width of the wiring forming the inductance element is lowered. For this reason, the resistance 44 in the equivalent circuit of the inductor in FIG. 9 is reduced, so that an inductance element having a small size and a small wiring resistance can be realized. Further, since the capacitance of the wiring forming the inductance element is reduced, an inductance element having a small stray capacitance can be realized. Furthermore, since the inductance value can be easily changed, an inductance element having a high degree of design freedom can be realized.

  Here, the said metal wire may be arrange | positioned at the said board | substrate in the state which both ends connected to the board | substrate and the intermediate part floated from the said board | substrate.

  As a result, the capacitance to ground and the capacitance between wirings are reduced, and the capacitances 41, 42, and 43 in the equivalent circuit of the inductor of FIG. 9 are reduced, so that an inductance element with a smaller stray capacitance can be realized.

  In addition, an insulating layer may be formed on the substrate, and the metal land may be disposed on the insulating layer.

  As a result, a semiconductor substrate can be used as a substrate on which metal wires are formed, and metal lands can be formed by a semiconductor process, so that the accuracy of the width of the metal lands and the gap between the metal lands can be improved. Can be realized. Further, since circuit elements such as capacitors and resistors can be formed in advance on the substrate on which the inductance element is formed, an inductance element that can be easily integrated with other circuit elements can be realized.

  The inductance element may further include a metal wiring disposed on an insulating layer formed on a substrate on which the metal wire is disposed, and the metal wire may be connected via the metal wiring. .

  As a result, a plurality of metal wires are connected in parallel with the spiral wiring, and the series resistance of the wiring forming the inductance element can be reduced, so that a small inductance element with low wiring resistance can be realized.

  The inductance element is further disposed on a metal wiring disposed on a first insulating layer formed on a substrate on which the metal wire is disposed, and on a second insulating layer formed on the metal wiring. A metal land that is a region formed of metal, wherein the metal wiring is connected to one of the plurality of metal wires, and the plurality of metal wires may be connected via the metal land. Good.

  As a result, the spiral wiring and the metal wire are arranged so that the signal flow passing through the spiral wiring and the signal flow passing through the metal wire immediately above the spiral wiring are in the same direction. Since the magnetic fields formed by the above can be strengthened, an inductance element having a large inductance value can be realized. In addition, compared to an inductor with only a spiral wiring and a large inductance value, the wiring length for obtaining a desired inductance value is shortened, and the series resistance of the wiring forming the inductor is reduced, so that the wiring resistance is small. In addition, a small inductance element can be realized.

  The present invention can also be an integrated circuit including the inductance element.

  As a result, an integrated circuit including an inductance element having a small size and good characteristics can be easily realized.

  Furthermore, this invention can also be set as the manufacturing method of the inductance element characterized by including the connection process which connects a some metal wire. Here, in the connecting step, a plurality of metal wires may be connected such that both ends of the metal wire are connected to the substrate, and an intermediate portion of the metal wire is floated from the substrate, The manufacturing method further includes a land formation step of forming a metal land, which is a region formed of metal, on the substrate, and the plurality of metal wires may be connected through the metal land in the connection step. Good.

  As a result, it is possible to realize a manufacturing method of an inductance element that is small and has good characteristics.

  In the connecting step, the plurality of metal wires may be connected using a part of the plurality of metal lands.

  Thus, it is possible to realize an inductance element manufacturing method capable of easily changing the inductance value. That is, an inductance element having a high degree of design freedom can be realized.

  In addition, it cannot be overemphasized that this invention can be implement | achieved not only as an above-described inductance element and its manufacturing method but as another inductance element which combined each said technical feature, and its manufacturing method. .

  The present invention can provide a small inductance element with low wiring resistance and stray capacitance. In addition, an inductance element having a high degree of design freedom can be provided. Furthermore, an inductance element that can be easily integrated with other circuit elements can be provided. Furthermore, an inductance element having a large inductance value can be provided.

  Therefore, according to the present invention, it is possible to provide a small inductance element having a high Q value, and its practical value is extremely high.

Hereinafter, an inductance element according to an embodiment of the present invention will be described with reference to the drawings.
(First embodiment)
1A is a top view showing the structure of the inductor according to the first embodiment of the present invention, and FIG. 1B is a sectional view (a sectional view taken along the line AA ′ in FIG. 1A). ).

  In the inductor according to the present embodiment, the wiring 2 for connecting the inductor to the circuit elements before and after, the lead-out wiring 3 for connecting the metal wire 5 and the wiring 2, and the plurality of metal lands 4 are electrically connected to each other. And a plurality of metal wires 5 formed. The plurality of metal wires 5 are sequentially connected in a spiral manner via the metal lands 4.

Here, the wiring 2, the lead-out wiring 3, and the metal land 4 are conductive layers made of metal disposed on the substrate 1, for example, Cu, Ag, Al, Au, etc. formed on the substrate 1. . At this time, for the substrate 1, for example, a high resistance dielectric substrate such as a glass epoxy substrate, a Teflon (registered trademark) substrate, an alumina ceramic substrate, and a single crystal sapphire substrate is used. The size of the metal lands 4 may vary depending on the diameter of the metal wires 5 to be used for wire bonding, for example 5000μm ² ~20000μm ² about.

  Further, the metal wire 5 is arranged on the substrate 1 with both ends connected to the substrate 1 and the intermediate portion floating from the substrate 1 to form an air bridge.

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 2, the lead-out wiring 3, and the plurality of metal lands 4 are formed on the substrate 1 by, for example, a printing technique.

  Next, the plurality of metal lands 4 are connected by, for example, wire bonding using the metal wire 5. At this time, the metal wire 5 forms an air bridge.

  As described above, according to the inductor of the present embodiment, the inductor has, for example, an air bridge structure as shown in FIG. Therefore, the contact area between the wiring forming the inductor and the substrate is small, and the ground capacitance is small. Further, the inter-wiring capacitance generated at the intersection of the wiring forming the inductor and the lead-out wiring is small, and the inter-wiring capacitance is small. That is, since the capacitances 41, 42, and 43 in the equivalent circuit of the inductor of FIG. 9 are reduced, the inductor of this embodiment can realize an inductor with a small stray capacitance.

In addition, according to the inductor of the present embodiment, a metal wire is used as the wiring that forms the inductor. Therefore, the wiring width and the wiring interval are not subject to manufacturing restrictions, the resistance per unit width of the wiring forming the inductor is reduced, and the resistance 44 in the equivalent circuit of the inductor in FIG. 9 is reduced. The inductor of this form can realize a small inductor with low wiring resistance. For example, when wire bonding is performed using a metal wire having a diameter of 25 microns, the cross-sectional area of the metal wire is about 490 μm ² . In order to realize a cross-sectional area equivalent to this by printing with a film thickness of 5 microns, a wiring with a width of 98 microns is required, and the inductor becomes larger. In contrast, the inductor of the present embodiment can be downsized as described above. In addition, since the capacitance of the wiring forming the inductor is reduced, the inductor of this embodiment can realize an inductor having a smaller stray capacitance. Furthermore, since the wiring layout can be easily changed and the number of turns of the spiral can be changed, the inductor of this embodiment can easily change the inductance value, and realizes an inductor having a high degree of design freedom. can do.
(Second Embodiment)
FIG. 2 is a top view showing the structure of the inductor according to the second embodiment of the present invention. The same elements as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted here.

  The inductor of the present embodiment is different from the inductor of the first embodiment in that it has a dummy metal land that is not connected to the metal wire, and the wiring 2, the lead-out wiring 3, the plurality of metal wires 5, and the plurality of metal lands. Metal land 6. The plurality of metal wires 5 are sequentially connected in a spiral shape via the metal lands 6.

Here, the plurality of metal lands 6 are regions formed of metal disposed on the substrate, for example, conductor layers such as Cu, Ag, Al, and Au formed on the substrate, and are connected to the metal wires 5. Metal lands 6 a and dummy metal lands 6 b not connected to the metal wires 5. At this time, the size of the metal lands 6 differs depending diameter of the metal wires 5 to be used for wire bonding, for example 5000μm ² ~20000μm ² about.

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 2, the lead-out wiring 3, and the plurality of metal lands 6 are formed on the substrate by, for example, a printing technique.

  Next, a plurality of metal lands 6a that are a part of the plurality of metal lands 6 are connected by, for example, wire bonding using the metal wires 5. Thereafter, when changing the inductance value, the metal land 6 to be connected is changed using the dummy metal land 6b. That is, the metal land 6 used for the connection of the metal wire 5 is changed.

  As described above, according to the inductor of the present embodiment, it is possible to realize a small inductor having a small wiring resistance and stray capacitance, similarly to the inductor of the first embodiment.

  Further, according to the inductor of the present embodiment, the inductor has the dummy metal land 6 b that is not connected to the metal wire 5. Therefore, since the spiral pattern can be changed and the number of turns of the spiral can be changed by using the dummy metal land 6b, the inductor of the present embodiment can easily change the inductance value and is high. An inductor having a degree of design freedom can be realized.

In the present embodiment, an inductor having a spiral pattern in which the number of dummy metal lands 6b is four and the number of turns is three is shown. However, the spiral pattern of the inductor may be another spiral pattern, for example, a spiral pattern in which the number of dummy metal lands 6b is nine and the number of turns is two.
(Third embodiment)
3A is a top view showing the structure of the inductor according to the third embodiment of the present invention, and FIG. 3B is a cross-sectional view (a cross-sectional view taken along the line AA ′ in FIG. 3A). ).

  The inductor according to the present embodiment is electrically connected to a wiring 12 for connecting the inductor to the front and rear circuit elements, a lead-out wiring 13 for connecting the metal wire 15 and the wiring 12, and a plurality of metal lands 14. And a plurality of metal wires 15 formed. The plurality of metal wires 15 are sequentially connected in a spiral shape via the metal lands 14.

Here, the wiring 12, the lead-out wiring 13, and the metal land 14 are regions formed of metal disposed on the semiconductor substrate 11, for example, conductor layers such as Cu, Ag, Al, and Au formed on the semiconductor substrate 11. It is. At this time, the semiconductor substrate 11 is made of GaAs (gallium arsenide), Si (silicon), or the like, and at least the surface of the semiconductor substrate 11 where the wiring 12, the extraction wiring 13, and the metal land 14 are formed is SiO ₂ (silicon oxide). ), SiN _x (silicon nitride), or the like. The size of the metal lands 14 may vary depending the diameter of the metal wire 15 to be used for wire bonding, for example 5000μm ² ~20000μm ² about.

  Further, the metal wire 15 is disposed on the semiconductor substrate 11 with both ends connected to the semiconductor substrate 11 and the intermediate portion floating from the semiconductor substrate 11 to form an air bridge.

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 12, the lead-out wiring 13, and the plurality of metal lands 14 are formed on the semiconductor substrate 11 by a semiconductor process such as photolithography, metal vapor deposition, and plating.

  Next, the plurality of metal lands 14 are connected by, for example, wire bonding using the metal wire 15. At this time, the metal wire 15 forms an air bridge.

  As described above, according to the inductor of the present embodiment, it is possible to realize a small inductor having a small wiring resistance and stray capacitance, similarly to the inductor of the first embodiment.

Further, according to the inductor of the present embodiment, the metal land 14 is formed by a semiconductor process. Therefore, since the accuracy of the width of the metal land and the gap between the metal lands can be improved, the inductor of the present embodiment can realize a smaller inductor. Further, since circuit elements such as capacitors and resistors can be formed in advance on a semiconductor substrate on which the inductor is formed, the inductor of this embodiment is an inductor that can be easily integrated with other circuit elements. Can be realized. As a result, an integrated circuit including an inductor having a small size and good characteristics can be easily realized.
(Fourth embodiment)
FIG. 4 is a top view showing the structure of the inductor according to the fourth embodiment of the present invention. The same elements as those in FIG. 3 are denoted by the same reference numerals, and detailed description thereof will be omitted here.

  The inductor of the present embodiment is different from the inductor of the third embodiment in that it has a dummy metal land that is not connected to the metal wire, and the wiring 12, the lead-out wiring 13, the plurality of metal wires 15, and the plurality of metal lands. Metal land 17. The plurality of metal wires 15 are sequentially connected in a spiral shape via the metal lands 17.

Here, the plurality of metal lands 17 are regions formed of metal disposed on the semiconductor substrate, for example, conductor layers such as Cu, Ag, Al, and Au formed on the semiconductor substrate. It consists of a metal land 17a to be connected and a dummy metal land 17b not connected to the metal wire 15. At this time, the size of the metal lands 17 may vary depending on the diameter of the metal wire 15 to be used for wire bonding, for example 5000μm ² ~20000μm ² about.

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 12, the lead-out wiring 13, and the plurality of metal lands 17 are formed on the semiconductor substrate by, for example, a printing technique.

  Next, a plurality of metal lands 17a which are a part of the plurality of metal lands 17 are connected by, for example, wire bonding using the metal wires 15. Thereafter, when changing the inductance value, the metal land 17 to be connected is changed using the dummy metal land 17b. That is, the metal land 17 used for connecting the metal wire 15 is changed.

  As described above, according to the inductor of the present embodiment, it is possible to realize a small inductor with low wiring resistance and stray capacitance, similarly to the inductor of the third embodiment.

Further, according to the inductor of the present embodiment, the inductor has the dummy metal land 17 b that is not connected to the metal wire 15. Therefore, when the metal wire 15 is connected, the spiral pattern can be changed by using the dummy metal land 17b, and the number of turns of the spiral can be changed. The value can be changed, and an inductor having a high degree of design freedom can be realized.
(Fifth embodiment)
FIG. 5A is a top view showing a structure of an inductor according to a fifth embodiment of the present invention, and FIG. 5B is a cross-sectional view (a cross-sectional view taken along line AA ′ in FIG. 5A). FIG. 5C is a cross-sectional view (a cross-sectional view taken along the line BB ′ in FIG. 5A).

  The inductor according to the present embodiment includes a wiring 31 for connecting the inductor to the front and rear circuit elements, a spiral wiring 32, an insulating layer 33 formed on the substrate 37 so as to cover the spiral wiring 32, and a plurality of metals. The land 35 is composed of a plurality of metal wires 36 electrically connected to each other. The plurality of metal wires 36 are spiral through the metal lands 35 so that the signal flow passing through the spiral wiring 32 and the signal flow passing through the metal wire 36 immediately above the spiral wiring 32 are in the same direction. Are connected sequentially.

Here, the wiring 31 and the spiral wiring 32 are conductive layers such as Cu, Ag, Al, and Au formed on the substrate 37, for example, a region formed of metal disposed on the substrate 37. The metal land 35 is a region formed of metal disposed on the insulating layer 33, for example, a conductor layer such as Cu, Ag, Al, and Au formed on the insulating layer 33. At this time, as the substrate 37, for example, a high resistance dielectric substrate such as a glass epoxy substrate, a Teflon substrate, an alumina ceramic substrate, and a single crystal sapphire substrate is used. For the insulating layer 33, for example, a high resistance dielectric substrate similar to the substrate 37 is used. Furthermore, the size of the metal lands 35 may vary depending on the diameter of the metal wire 36 to be used for wire bonding, for example 5000μm ² ~20000μm ² about.

  Further, the metal wire 36 is arranged on the substrate 37 with both ends connected to the substrate 37 and the intermediate portion floating from the substrate 37 to form an air bridge.

  The insulating layer 33 is provided with an opening 34 so that the spiral wiring 32 is exposed on the spiral wiring 32 in the center. The exposed spiral wiring 32 is connected to one of the plurality of metal wires 36. The

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 31 and the spiral wiring 32 are formed on the substrate 37 by, for example, a printing technique.

  Next, an insulating layer 33 is formed on the substrate 37 so as to cover the spiral wiring 32, and then the insulating layer 33 on the spiral wiring 32 in the center is removed to make contact between the spiral wiring 32 and the metal wire 36. Opening 34 is formed.

  Next, a plurality of island-shaped metal lands 35 are formed on the insulating layer 33 immediately above the spiral wiring 32. Thereafter, the spiral wiring 32 at the center exposed through the opening 34 and one of the metal lands 35 are connected by, for example, wire bonding using a metal wire 36.

  Next, the plurality of metal lands 35 are connected by, for example, wire bonding using the metal wire 36. At this time, the metal wire 36 forms an air bridge.

  As described above, according to the inductor of the present embodiment, the signal flow passing through the spiral wiring 32 and the signal flow passing through the metal wire 36 immediately above the spiral wiring 32 are in the same direction. Wiring 32 and metal wire 36 are arranged. Therefore, the magnetic field formed by the spiral wiring and the metal wire reinforces each other, so that the inductor of this embodiment can realize an inductor having a large inductance value.

  Further, according to the inductor of the present embodiment, the inductance value is increased using the metal wire 36. Therefore, as compared with an inductor having only a spiral wiring 32 and a large inductance value, the wiring length for obtaining a desired inductance value is shortened, and the series resistance of the wiring forming the inductor is reduced. The form of the inductor can realize a small inductor with low wiring resistance.

  A ferromagnetic material may be provided on the insulating layer 33 between the spiral wiring 32 and the metal wire 36. As a result, the inductance value can be further improved.

Further, although the high-resistance dielectric substrate is used as the substrate 37, a semiconductor substrate made of GaAs (gallium arsenide), Si (silicon), or the like may be used. At this time, an insulating layer made of SiO ₂ (silicon oxide), SiN _x (silicon nitride) or the like is formed at least on the surface of the semiconductor substrate, and the spiral wiring is formed on the insulating layer.
(Sixth embodiment)
FIG. 6 is a top view showing the structure of the inductor according to the sixth embodiment of the present invention. The same elements as those in FIG. 5 are denoted by the same reference numerals, and detailed description thereof will be omitted here.

  The inductor according to the present embodiment includes a wiring 31, a spiral wiring 32, and a plurality of metal wires 46. The plurality of metal wires 46 are sequentially connected in a spiral manner via the spiral wiring 32. That is, the spiral wiring 32 is electrically connected in parallel.

  Here, the metal wire 46 is disposed on the substrate in a state where both ends are connected to the substrate and the intermediate portion is lifted from the substrate, thereby forming an air bridge.

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 31 and the spiral wiring 32 are formed on the substrate by, for example, a printing technique.

  Next, the spiral wiring 32 and the plurality of metal wires 46 are connected in parallel by wire bonding. At this time, the metal wire 46 forms an air bridge.

As described above, according to the inductor of the present embodiment, the plurality of metal wires 46 are connected in parallel with the spiral wiring 32. Therefore, since the series resistance of the wiring forming the inductor can be reduced, the inductor according to the present embodiment can realize a small inductor with low wiring resistance.
(Seventh embodiment)
FIG. 7A is a top view showing the structure of the inductor according to the seventh embodiment of the present invention, and FIG. 7B is a cross-sectional view (a cross-sectional view taken along the line AA ′ in FIG. 7A). FIG. 7C is a cross-sectional view (a cross-sectional view taken along the line BB ′ in FIG. 7A).

  The inductor according to the present embodiment includes a wiring 51 for connecting the inductor to the front and rear circuit elements, a plurality of island-shaped vertical wirings 52, and a plurality of metal wires 55 electrically connected to each other. The The plurality of metal wires 55 are sequentially connected in a vertical winding shape through the vertical wiring 52.

  Here, the wiring 51 and the vertical wiring 52 are regions formed of metal formed on the substrate 57, for example, conductor layers such as Cu, Ag, Al, and Au formed on the substrate 57. At this time, for the substrate 57, for example, a high resistance dielectric substrate such as a glass epoxy substrate, a Teflon substrate, an alumina ceramic substrate, and a single crystal sapphire substrate is used.

  Further, the metal wire 55 is disposed on the substrate 57 with both ends connected to the substrate 57 and the intermediate portion floating from the substrate 57 to form an air bridge.

Next, a method for manufacturing the inductor having the above structure will be described.
First, the wiring 51 and the vertical wiring 52 are formed on the substrate 57 by, for example, a printing technique.

  Next, the plurality of vertical wirings 52 are connected by, for example, wire bonding using the metal wire 55. At this time, the metal wire 55 forms an air bridge.

  As described above, according to the inductor of the present embodiment, the inductor uses a plurality of metal wires as wiring forming the inductor and has an air bridge structure. Therefore, it is possible to realize a small vertically wound inductor having a small wiring resistance and stray capacitance.

  Note that a ferromagnetic material may be provided at the center of the vertically wound wiring, that is, between the vertical wiring 52 and the metal wire 55. As a result, the inductance value can be further improved.

  Further, in the inductor according to the present embodiment, the plurality of metal wires are sequentially connected in a vertical winding manner through the vertical wiring. However, the plurality of metal wires may be sequentially connected in a vertical winding manner by the metal lands shown in the first, second, third, and fourth embodiments.

  The present invention can be used for an inductance element, and in particular for an MMIC.

(A) It is a top view which shows the structure of the inductor of the 1st Embodiment of this invention. (B) It is sectional drawing (sectional drawing in the A-A 'line of Fig.1 (a)) which shows the structure of the inductor of the embodiment. It is a top view which shows the structure of the inductor of the 2nd Embodiment of this invention. (A) It is a top view which shows the structure of the inductor of the 3rd Embodiment of this invention. (B) It is sectional drawing (sectional drawing in the A-A 'line | wire of Fig.3 (a)) which shows the structure of the inductor of the embodiment. It is a top view which shows the structure of the inductor of the 4th Embodiment of this invention. (A) It is a top view which shows the structure of the inductor of the 5th Embodiment of this invention. FIG. 6B is a sectional view showing the structure of the inductor according to the embodiment (a sectional view taken along line A-A ′ in FIG. 5A). (C) It is sectional drawing (sectional drawing in the B-B 'line | wire of Fig.5 (a)) which shows the structure of the inductor of the embodiment. It is a top view which shows the structure of the inductor of the 6th Embodiment of this invention. (A) It is a top view which shows the structure of the inductor of 7th Embodiment of this invention, (b) Sectional drawing which shows the structure of the inductor of the same embodiment (in the AA 'line of Fig.7 (a)) FIG. (C) It is sectional drawing (sectional drawing in the B-B 'line | wire of Fig.7 (a)) which shows the structure of the inductor of the embodiment. It is a top view which shows the structure of the conventional spiral inductor. It is an equivalent circuit of an inductance element.

Explanation of symbols

1, 37, 57 Substrate 2, 12, 31, 51 Wiring 3, 13, 63 Lead-out wiring 4, 6, 6a, 6b, 14, 17, 17a, 17b, 35 Metal land 5, 15, 36, 46, 55 Metal Wire 11 Semiconductor substrate 16, 33 Insulating layer 32, 62 Spiral wiring 34 Opening 41 Inter-wiring capacitance 42, 43 Ground capacitance 44 Wiring resistance 61 Outer wiring

Claims (13)

An inductance element comprising a plurality of connected metal wires. 2. The inductance element according to claim 1, wherein the metal wire is disposed on the substrate with both ends connected to the substrate and an intermediate portion floating from the substrate. The inductance element further includes a metal land, which is an area formed of metal, disposed on a substrate on which the metal wire is disposed,
The inductance element according to claim 1, wherein the plurality of metal wires are connected via the metal land. An insulating layer is formed on the substrate,
The inductance element according to claim 3, wherein the metal land is disposed on the insulating layer. The inductance element further includes a metal wiring disposed on an insulating layer formed on a substrate on which the metal wire is disposed,
The inductance element according to claim 1, wherein the metal wire is connected via the metal wiring. The inductance element is further disposed on a metal wiring disposed on a first insulating layer formed on a substrate on which the metal wire is disposed, and on a second insulating layer formed on the metal wiring. A metal land that is a region formed of metal,
The metal wiring is connected to one of the plurality of metal wires;
The inductance element according to claim 1, wherein the plurality of metal wires are connected via the metal land. The inductance element according to claim 1, wherein the plurality of metal wires are connected in a spiral shape. The inductance element according to claim 1, wherein the plurality of metal wires are connected in a vertical winding shape. An integrated circuit comprising the inductance element according to claim 1. The manufacturing method of the inductance element characterized by including the connection process which connects a some metal wire. 11. The inductance according to claim 10, wherein in the connecting step, a plurality of metal wires are connected such that both end portions of the metal wire are connected to a substrate and an intermediate portion of the metal wire is floated from the substrate. Device manufacturing method. The method of manufacturing the inductance element further includes a land forming step of forming a metal land, which is a region formed of metal, on the substrate,
The method of manufacturing an inductance element according to claim 11, wherein in the connecting step, the plurality of metal wires are connected through the metal lands. The method of manufacturing an inductance element according to claim 12, wherein in the connecting step, the plurality of metal wires are connected using a part of the plurality of metal lands.

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