JP2006196912A5 - - Google Patents

Claims (14)

Nitride having a structure in which an active layer having a quantum well structure having a well layer made of a nitride semiconductor containing In and a barrier layer made of a nitride semiconductor is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer In semiconductor elements,
The active layer is a first barrier layer disposed on the p-type nitride semiconductor layer side of the well layer, and the first barrier layer is sandwiched between the n-type nitride and the well layer. A second barrier layer that is a semiconductor layer side and is an outer side of the well layer, the n-type nitride semiconductor layer side or a barrier layer between the well layer and the well layer , and
Nitride semiconductor element wherein n-type impurity concentration of the first barrier layer is 1 × 10 ¹⁷ / cm ³ or less and n-type impurity concentration of the second barrier layer is 5 × 10 ¹⁷ / cm ³ or more . Nitride having a structure in which an active layer having a quantum well structure having a well layer made of a nitride semiconductor containing In and a barrier layer made of a nitride semiconductor is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer In semiconductor elements,
Wherein the active layer, a barrier layer between the outer or the well layer and the well layer than the well layer, L number (L ≧ 2) possess,
The n-type nitride semiconductor layer barrier layer arranged barrier layer side B _1, i-th from the barrier layer B ₁ counted toward the p-type nitride semiconductor layer (i = 1,2,3, · ..L) When the barrier layer is the barrier layer B _i ,
i = n-type impurity concentration of the barrier layer _{B i} from 1 to i = n (1 <n < L) is not more than ^{1 × 10 17 / cm 3,} i = n -type impurity concentration of the barrier layer _{B L} of L Is a nitride semiconductor device having 5 × 10 ¹⁷ / cm ³ or more . Said first barrier layer or the barrier layer B _L is a nitride semiconductor device according to claim 1 or 2, characterized in that arranged on the outermost of said active layer. 4. The nitride semiconductor device according to claim 1, wherein the second barrier layer does not substantially contain a p-type impurity. 5. At least one well layer, a nitride semiconductor device according to any one of claims 1 to 4, characterized in that it has a thickness of at least 40Å of the active layer. The thickness of the first barrier layer or the barrier layer B _L has any of claims 1 to 5, characterized in that greater than the thickness of the barrier layer B _i of the second barrier layer or i ≠ L 2. The nitride semiconductor device according to item 1 . The nitride semiconductor device according to any one of claims 1 to 5, wherein the thickness of the first p side barrier layer is approximately the same as the thickness of the second n side barrier layer . The p-type nitride semiconductor layer has a first p-type nitride semiconductor layer adjacent to the active layer, and the first p-type nitride semiconductor layer is made of a nitride semiconductor containing Al. the nitride semiconductor device according to any one of claims 1 to 7, characterized. An intermediate layer having an intermediate band gap energy between the first barrier layer and the first p-type nitride semiconductor layer between the first barrier layer and the first p-type nitride semiconductor layer The nitride semiconductor device according to claim 8, comprising: The first p-type nitride semiconductor layer is made of Al. _a Ga _1-a 10. The nitride semiconductor device according to claim 8, wherein N (0 <a <1) and the distance to the well layer is 100 mm or more and 1000 mm or less. In the active layer, a nitride semiconductor device according to any one of claims 1 to 10, wherein the number of well layers is in the range of 1 to 3. The nitride semiconductor device according to any one of claims 1 to 11, wherein a barrier layer outside the well layer or between the well layer and the well layer is composed of two or more layers having different compositions and impurity amounts. The well layer is In _α Ga _1-α N (0 <α ≦ 1);
The barrier _{layer, In β Ga 1-β N} (0 ≦ β <1, α> β) a nitride semiconductor device according to any one of claims 1 to 12. 16. The nitride semiconductor device according to claim 1 , wherein the active layer is sandwiched between an upper clad layer having a nitride semiconductor containing Al and a lower clad layer having a nitride semiconductor containing Al. The nitride semiconductor device according to claim 1 .