JP2006190828A - Substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To block a misted treatment liquid from residing in a fixed container and from jetting out to the outside of the fixed container to check the deposition of mist to a substrate and an external peripheral apparatus, etc. <P>SOLUTION: The substrate treatment apparatus has a nozzle 70 for supplying a treatment liquid to a substrate G held by a rotatable spin chuck 50, a rotary cup 60 rotatably synchronized with the spin chuck for housing the substrate held by the chuck 50 in a sealed space with a lid 61, and a fixed cup 62 surrounding the rotary cup having a gas inlet hole 62b at the upside and an exhaust hole 81 at the downside. The fixed cup comprises a gas steam control chamber 66 projecting below the rotary cup, connected to a narrow flow passage 65 formed between the rotary cup and the outer wall, a buffer chamber 68 connected to the stream control chamber through an annular slit 67 provided on the bottom of the control chamber, and a discharge hole 69 for discharging liquid separated from gas in the buffer chamber. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus for processing an LCD glass substrate used for, for example, a liquid crystal display device.

  In general, in the manufacture of LCD (Liquid Crystal Display) and the like, the same photo as used in the manufacture of semiconductor devices to form ITO (Indium Tin Oxide) thin films and electrode patterns on a glass substrate for LCD. Lithographic technology is used. In this photolithography technique, a photoresist is applied to a glass substrate, which is exposed and further developed.

  Conventionally, in a photoresist coating process, a resist plate is adsorbed by a chuck plate (spin chuck) which is a holding means for holding a glass substrate, is stored in a rotating container, and a resist solution is supplied from a nozzle which is a processing liquid supply means. The glass substrate was rotated while being dropped on the center of the glass substrate to spread the resist solution over the entire surface of the substrate, and then the substrate was rotated to uniformly adjust the film thickness to form a resist film on the substrate. At this time, in order to remove the resist solution scattered by the rotation of the rotating container, an apparatus having an exhaust port on the side of the fixed container that houses the rotating container or the bottom surface of the chuck plate of the fixed container has been used. The resist mist generated by the rotation is captured by, for example, a flange on the side peripheral portion of the container, and the resist solution is led out from the flange to the drain that continues downward when the rotation is stopped (see, for example, Patent Document 1). .

In addition, in a photoresist coating process, a technique using a substrate processing apparatus in which a partition for adjusting a gas flow is provided in a fixed container is also known (see, for example, Patent Document 2). According to this technique, the flow of the gas introduced into the fixed container is adjusted by the partition wall, and the gas is discharged from the exhaust port provided on the bottom surface side of the fixed container. Further, the resist mist generated by the rotation is discharged from the drain at the bottom of the fixed outer peripheral side.
JP 2002-166217 (paragraph number 0040, FIG. 2) JP 2002-153799 (paragraph numbers 0038 and 0042, FIG. 2)

  However, in the former technique, that is, the technique described in Japanese Patent Laid-Open No. 2002-166217, when the glass substrate is rotated, the resist solution is scattered, and the resist mist enters and accumulates in the exhaust port on the side of the fixed container, thereby reducing the exhaust amount. There was a problem.

  In the latter case, that is, in the technique described in Japanese Patent Laid-Open No. 2002-153799, since the space outside the exhaust hole in the container is narrow, generation of resist mist cannot be sufficiently suppressed, and resist mist enters and accumulates in the exhaust port, resulting in a large exhaust amount. There was a problem of lowering.

  Further, in this type of conventional substrate processing apparatus, the resist drain discharged into the fixed container is wound up by a spiral rotating airflow generated by the centrifugal force and the rotational force accompanying the rotation of the rotating container, and is then placed in the fixed container. There was a problem of mist formation and retention. Also, since the airflow in the container exceeds about 100 m / sec, it may pass through a small gap and eject resist mist to the outside of the container. This ejected mist adheres directly to the substrate and causes product defects. As a result, there were problems such as contamination of the outside of the container and secondary adverse effects.

  The present invention has been made in view of the above circumstances, and suppresses the stay of mist-treated processing liquid in the fixed container and suppresses the ejection of the mist to the outside of the fixed container, thereby suppressing the adhesion of the mist to the substrate. An object of the present invention is to provide a substrate processing apparatus capable of suppressing adhesion to external peripheral devices.

  In order to solve the above-described problems, a substrate processing apparatus of the present invention includes a holding unit that rotatably holds a substrate to be processed, and a processing liquid supply unit that supplies a processing liquid to the substrate to be processed held by the holding unit. The substrate to be processed held by the holding means is accommodated in a space sealed by a lid, and a rotating container that can rotate in synchronization with the holding means, surrounds the rotating container, and has a gas inlet at the top. And a fixed container having an exhaust port at the bottom, and the fixed container is connected to a narrow channel formed between the outer wall of the rotating container and the rotating container. An airflow control chamber that bulges downward, a buffer chamber connected to the airflow control chamber via an annular slit provided at the bottom of the airflow control chamber, and a drainage port for discharging liquid separated in the buffer chamber Equipped Comprising Te, characterized in that (claim 1).

  In the present invention, it is preferable to provide a collision wall that rises from the inner circumferential side of the annular slit toward the air flow control chamber side and the buffer chamber side.

  The air flow control chamber may have any shape as long as it is continuous with a narrow channel formed between the outer wall of the rotating container and bulges below the rotating container. The air flow control chamber has a first inner wall having a downward gradient from one side of the narrow channel toward the outer side, and a second inner wall having a downward gradient from the lower end of the first inner wall toward the inner side. And the third inner wall having an upward slope from the lower end of the second inner wall toward the inward side (Claim 3). In this case, it is preferable to further include a protruding wall protruding from the third inner wall toward the air flow control chamber side.

  In addition, it is preferable to coat a silicon resin film for suppressing adhesion of the treatment liquid on the inner wall surface of the airflow control chamber.

  Since the substrate processing apparatus of the present invention is configured as described above, the following effects can be obtained.

  (1) According to the first aspect of the invention, the centrifugal force generated by the rotation in the process of conveying the mist of the processing liquid discharged from the rotating container by the spiral rotating air flow generated in the air flow control chamber of the fixed container. The liquid separated into the gas and liquid can be discharged from the liquid discharge port by feeding into the buffer chamber connected to the air flow control chamber through the annular slit and reducing the flow velocity in the buffer chamber. Therefore, it is possible to suppress the stay of the mist processing liquid in the fixed container and to suppress the ejection of the fixed container to the outside, and to suppress the adhesion of the mist to the substrate and to external peripheral devices. And the like can be suppressed.

  (2) According to the invention described in claim 2, by providing a collision wall that rises from one side on the inner peripheral side of the annular slit toward the air flow control chamber side and the buffer chamber side, Since the carried mist can be efficiently guided into the buffer chamber, in addition to the above (1), it is possible to further suppress the retention of the mist processing liquid in the fixed container, and to prevent the mist from being ejected to the outside of the fixed container. Can be suppressed.

  (3) According to the invention described in claim 3, the air flow control chamber has a first inner wall having a downward gradient from one side of the narrow channel formed between the rotary container and the outer side, The second inner wall having a downward gradient from the lower end of the first inner wall toward the inward side, and the third inner wall having an upward gradient from the lower end of the second inner wall toward the inward side. By using the centrifugal force generated by the rotation, the mist carried by the rotating airflow in the fixed container is made smooth to suppress the turbulent flow, and the rotating airflow in which the turbulent flow is suppressed is guided into the buffer chamber and the flow velocity In addition to the above (1) and (2), it is possible to further suppress the adhesion of mist to the substrate and the adhesion to external peripheral devices. In this case, by providing a protruding wall that protrudes from the third inner wall toward the airflow control chamber, the airflow that has passed through the annular slit can collide with the protruding wall and be returned to the lower annular slit. Mist staying in the control chamber can be more efficiently guided into the buffer chamber.

  (4) According to the invention described in claim 5, the mist adherence to the inner wall surface of the airflow control chamber is suppressed by coating the inner wall surface of the airflow control chamber with the silicon resin film for suppressing the adhesion of the treatment liquid. It is possible to suppress the mist from staying in the airflow control chamber. Therefore, in addition to the above (1) to (3), it is possible to further suppress the adhesion of mist to the substrate and the adhesion to external peripheral devices.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the substrate processing apparatus according to the present invention is applied to a resist coating processing apparatus in an LCD substrate resist coating / development processing system will be described.

  1 is a schematic plan view showing a resist coating / development processing system for an LCD substrate to which a substrate processing apparatus according to the present invention is applied, FIG. 2 is a schematic front view thereof, and FIG. 3 is a schematic rear view thereof.

  As shown in FIGS. 1 to 3, the resist coating / development processing system includes a loading / unloading unit 1 on which a cassette C that houses a plurality of substrates to be processed, an LCD glass substrate G (hereinafter referred to as a substrate G), is placed. A processing unit 2 having a plurality of processing units for performing a series of processes including resist coating and development on the substrate G, and an interface unit 3 for transferring the substrate G to and from the exposure apparatus 4. The carrying-in / out part 1 and the interface part 3 are arrange | positioned at the both ends of the process part 2, respectively. In FIG. 1, the longitudinal direction of the resist coating / development processing system is the X direction, the direction orthogonal to the X direction in plan view is the Y direction, and the vertical direction with respect to plan view is the Z direction.

  The loading / unloading unit 1 includes a transport mechanism 5 for loading / unloading the substrate G between the cassette C and the processing unit 2, and the loading / unloading unit 1 loads / unloads the cassette C to / from the outside. . The transport mechanism 5 has a transport arm 5a and can move on a transport path 6 provided along the Y direction, which is the arrangement direction of the cassettes C. The transport arm 5a allows the cassette C and the processing unit 2 to move. The substrate G is loaded and unloaded between the two.

  The processing unit 2 basically has two parallel rows of transfer lines A and B for substrate transfer extending in the X direction, and is directed from the loading / unloading unit 1 side toward the interface unit 3 along the transfer line A. A scrub cleaning unit (SCR) 11, a first thermal processing unit section 16, a resist processing unit 13, and a second thermal processing unit section 17 are arranged. Further, a second thermal processing unit section 17, a development processing unit (DEV) 14, an i-ray UV irradiation unit (i-UV) 15, and the like from the interface unit 3 side toward the carry-in / out unit 1 along the transport line B A third thermal processing unit 18 is arranged. An excimer UV irradiation unit (e-UV) 12 is provided on a part of the scrub cleaning unit (SCR) 11. In this case, an excimer UV irradiation unit (e-UV) 12 is provided to remove organic substances on the substrate G prior to scrubber cleaning. An i-ray UV irradiation unit (i-UV) 15 is provided for performing a decoloring process for development.

  Note that the first thermal processing unit section 16 includes two thermal processing unit blocks 31 and 32 configured by stacking thermal processing units that perform thermal processing on the substrate G. In this case, the thermal processing unit block 31 is provided on the scrub cleaning processing unit (SCR) 11 side, the baking unit (BAKE) for performing the heat treatment before applying the resist to the substrate G is two-stage, and the hydrophobizing process is performed by HMDS gas. Adhesion units (AD) to be applied are stacked in order from the bottom. On the other hand, the thermal processing unit block 32 is provided on the resist processing unit 13 side, and two stages of cooling units (COL) for cooling the substrate G and an adhesion unit (AD) are stacked in order from the bottom. A first transport mechanism 33 is provided between the two thermal processing unit blocks 31 and 32.

  Further, the second thermal processing unit section 17 has two thermal processing unit blocks 34 and 35 configured by laminating thermal processing units for performing thermal processing on the substrate G. In this case, the thermal processing unit block 34 is provided on the resist processing unit 13 side, and three stages of pre-baking units (PREBAKE) for performing heat treatment after resist application on the substrate G are stacked. On the other hand, the thermal processing unit block 35 is provided on the development processing unit 14 side, and includes a cooling unit (COL) and a post-exposure baking unit (PEBAKE) for performing heat treatment after exposure and before development processing in order from the bottom. Are stacked. A second transport mechanism 36 is provided between the two thermal processing unit blocks 34 and 35.

  The third thermal processing unit section 18 includes two thermal processing unit blocks 37 and 38 configured by stacking thermal processing units that perform thermal processing on the substrate G. In this case, the thermal processing unit block 37 is provided on the development processing unit (DEV) 14 side, and a cooling unit (COL) and a post-baking unit (POBAKE) for performing heat treatment after development of the substrate G are arranged in two stages from the bottom. They are stacked in order. On the other hand, the thermal processing unit block 38 is provided on the cassette station 1 side. Like the thermal processing unit block 37, a cooling unit (COL) and a post-baking unit (POBAKE) for performing a heat treatment after development of the substrate G are provided. Two layers are stacked in order from the bottom. A third transport mechanism 39 is provided between the two thermal processing unit blocks (TB) 37 and 38.

  The interface unit 3 includes an extension / cooling stage (EXT / COL) 41, an external device block 42 in which a peripheral exposure device (EE) and a TITRA are stacked, a buffer stage (BUF) 43, A fourth transport mechanism 44 is provided.

  In the interface unit 3 configured as described above, the substrate G transported by the second transport mechanism 36 is transported to the extension / cooling stage (EXT / COL) 41, and the external device block 42 is transported by the fourth transport mechanism 44. To the peripheral exposure apparatus (EE), exposure for removing the peripheral resist is performed, and then the fourth transport mechanism 44 transports the exposure apparatus 4 to expose the resist film on the substrate G. A predetermined pattern is formed. In some cases, the substrate G is accommodated in the buffer stage (BUF) 43 and then transferred to the exposure apparatus 4. After the exposure is completed, the substrate G is carried into the TITRA of the external device block 42 by the fourth transport mechanism 44 and predetermined information is written on the substrate G, and then the extension / cooling stage (EXT / COL). ) 41 and transported to the processing unit 2 again.

  As shown in FIG. 4, the resist processing unit 13 is formed on a substrate G by the resist coating processing apparatus (CT) 20 constituting the substrate processing apparatus according to the present invention and the resist coating processing apparatus (CT) 20. A reduced-pressure drying apparatus (VD) 21 for drying the resist film in a reduced-pressure container (not shown) and an edge remover (ER) 22 for removing the resist on the peripheral edge of the substrate G are provided. In the resist processing unit 13, the substrate G coated with the resist by the resist coating processing device (CT) 20 is carried into the reduced pressure drying processing device (VD) 21 by the pair of transfer arms 23, and then transferred to the edge remover (ER) 22. The resist on the peripheral edge of the substrate G is removed after being carried in. Further, a pair of the same as the transfer arm 23 is provided between the edge remover (ER) 22 and the thermal processing unit block 34 and between the thermal processing unit block 32 and the resist coating processing apparatus (CT) 20. A transfer arm (not shown) is provided.

  As shown in FIG. 5, the resist coating apparatus 20 includes a spin chuck 50 that is a substrate holding means that can horizontally rotate and raise and lower the substrate G, and the substrate G held by the spin chuck 50 and the spin chuck 50. A rotating cup 60 that can be rotated horizontally, which is a bottomed cylindrical rotating container having an open upper end, a lid 61 that can be raised and lowered to close the upper opening of the rotating cup 60, and the rotating cup 60. A fixed cup 62, which is a fixed container fixedly arranged so as to surround the outer periphery, and a portal frame 72 slidably installed between a pair of guide rails 71 arranged in parallel to each other outside the fixed cup 62. And a resist supply nozzle 70 (hereinafter referred to as a nozzle 70), which is a processing liquid supply means mounted on (see FIG. 4).

  An opening 60 a is formed at the upper end of the rotary cup 60, and a disc-shaped lid 61 is detachably disposed on the rotary cup 60. When the rotary cup 60 is rotated, the opening 60a is closed with the lid 61. The lid 61 is provided with a vent hole (not shown) so that the airflow in the rotating cup 60 can be adjusted when the rotating cup 60 rotates. Further, a gripping portion 61a is projected on the upper surface of the central portion of the lid 61, and the gripping portion 61a is gripped by a robot arm 101 that can be moved up and down by a lifting mechanism 100 (see FIG. 4). The lid 61 is configured to be attached to and detached from the rotating cup 60.

  The spin chuck 50 is configured such that a rotating shaft 51 extending in a vertical direction is supported by a spline bearing 52 so as to be slidable in a vertical direction, that is, can be moved up and down, and a lower end portion is connected to a lifting cylinder 53 as a lifting means. Has been. In this case, the rotating shaft 51 is slidably connected to a spline bearing 52 that is fitted to the inner peripheral surface of the rotating inner cylinder 56 that is rotatably mounted to the inner peripheral surface of the fixed collar 54 via a bearing 55a. ing. A rotating outer cylinder 57 connected to the lower surface of the rotating cup 60 via a bearing 55b is fitted on the outer peripheral surface of the fixed collar 54. Further, driven pulleys 58a and 58b are mounted on the rotating inner cylinder 56 and the rotating outer cylinder 57, and the driven pulleys 58a and 58b are respectively connected to driving shafts 58c and 58d of driving motors 58A and 58B which are rotating means. Timing belts 59a and 59b are stretched between the mounted drive pulleys 58c and 58d. Accordingly, when the drive motors 58A and 58B are driven, the rotary shaft 51 rotates via the timing belts 59a and 59b, the spin chuck 50 rotates horizontally, and the rotary cup 60 rotates horizontally via the rotating outer cylinder 57. . The lower side of the rotating shaft 51 is disposed in a cylinder (not shown), and the rotating shaft 51 is connected to the elevating cylinder 53 via a vacuum seal portion 51a.

  As described above, the rotating cup 60 is attached to the outer peripheral surface of the fixed collar 54 via the rotating outer cylinder 57 mounted via the bearing 55b, and the bottom 60b of the rotating cup 60 and the lower surface of the spin chuck 50 are attached. An O-ring for sealing (not shown) is interposed between the spin chuck 50 and the spin chuck 50 is lowered so that airtightness is maintained in close contact with the O-ring. Further, the drive from the drive motor 58B is transmitted to the rotary cup 60 by the timing belt 59b spanned between the driven pulley 58b attached to the rotary outer cylinder 57 and the drive pulley 58f attached to the drive motor 58B. Is configured to rotate horizontally. In this case, the drive motors 58A and 58B and the elevating cylinder 53 are electrically connected to control means, for example, the CPU 200, and controlled based on a control signal from the CPU 200, so that the rotary cup 60 and the spin chuck 50 rotate synchronously. It is configured as follows. A labyrinth seal (not shown) is interposed between the fixed collar 54, the rotating inner cylinder 56, and the rotating outer cylinder 57, and rotates from the lower driving system into the rotating cup from the lower driving system when rotating. Prevents dust from entering the cup.

  Further, as shown in FIG. 6, a discharge hole 63 is provided in the lower portion of the peripheral wall of the rotary cup 60 so that the resist solution as the processing liquid can be discharged to the inner wall side of the fixed cup 62 by the rotation of the rotary cup 60. In addition, an annular guard member 64 facing the discharge hole 63 is provided at the lower part of the outer wall of the rotary cup 60. The guard member 64 includes a horizontal mounting piece 64a that is fixed to the outer wall mounting portion 60c of the rotary cup 60 by a fixing screw (not shown), a hanging piece 64b that is bent at a substantially right angle from the tip of the horizontal mounting piece 64a, The drooping piece 64b is formed in a substantially “F” -shaped cross section including a discharge hole 63 bent in a downward gradient from the lower end toward the inward side and an inclined piece 64c facing the discharge hole 63.

  Thus, by forming the guard member 64 in a substantially “F” cross-section, the resist solution that has flowed out of the discharge hole 63 due to the rotation of the rotary cup 60 is received by the inclined piece 64 c, Since it stays on the side, the resist solution can be prevented from scattering and flowing out.

  As shown in FIG. 5, the fixed cup 62 has a substantially bottomed cylindrical lower cup half 62c placed and fixed on a fixed frame 90 via a support member 91, and an upper portion of the lower cup half 62c. The upper cup half 62d is joined to the opening. As shown in FIGS. 5 and 6, the fixed cup 62 includes an airflow control chamber 66 that is connected to a narrow channel 65 formed between the outer wall of the rotating cup 60 and bulges below the rotating cup 60. A buffer chamber 68 connected to the air flow control chamber 66 via an annular slit 67 provided at the bottom of the air flow control chamber 66 and a drain port 69 for discharging the liquid separated in the buffer chamber 68 are provided. .

  In this case, the air flow control chamber 66 has a first inner wall 66a having a downward gradient from one side of the narrow channel 65 toward the outer side, and a lower side from the lower end of the first inner wall 66a toward the inner side. A second inner wall 66b having a gradient and a third inner wall 66c having an upward gradient from the lower end of the second inner wall 66b toward the inward side are provided. A protruding wall 66d that protrudes substantially horizontally toward the inside of the control chamber 66 is provided. A drooping wall 66e that covers the joint between the lower cup half 62c and the upper cup half 62db constituting the fixed cup 62 is formed on the lower end side of the first inner wall 66a so as to constitute the first inner wall 66a. It is extended. Further, a silicon resin film 80 for suppressing adhesion of a resist solution as a processing solution is coated on the surfaces of the first to third inner walls 66a, 66b, and 66c (see FIG. 6). In this way, the silicon resin film 80 is coated on the inner surfaces of the inner walls 66a to 66c (specifically, including the hanging wall 66e) of the fixed cup 62, thereby suppressing the adhesion of the resist to the inner wall surface of the airflow control chamber 66. In addition, it is possible to suppress mist retention and to provide corrosion resistance.

  An annular slit 67 is provided between the lower end portions of the second inner wall 66b and the third inner wall 66c of the airflow control chamber 66 configured as described above. A collision wall 67a stands from the inner circumferential side of the annular slit 67 toward the air flow control chamber 66 side and the buffer chamber 68 side.

  In the airflow control chamber 66 configured as described above, a spiral rotating airflow generated by the centrifugal force and the rotating force accompanying the rotation of the rotating cup 60 is formed. By this rotating airflow, the resist solution discharged from the discharge hole 63 of the rotating cup 60 into the airflow control chamber 66 is misted, and as shown by arrows in FIG. 6, the first inner wall 66a and the second inner wall 66b. And mist is carried along the 3rd inner wall 66c. The rotating airflow collides with a collision wall 67a that rises from one side on the inner circumferential side of the annular slit 67 toward the airflow control chamber 66 side and the buffer chamber 68 side, and is guided into the buffer chamber 68. The mist is separated into gas and liquid by the reduction of the pressure and the difference in specific gravity, and the liquid is discharged from the drain port 69.

  In addition, in order to discharge the gas introduced into the fixed cup 62 from the inlet 62b provided in the fixed cup lid 62a that closes the opening of the fixed cup 62 at the bottom of the lower cup half 62c of the fixed cup 62. The exhaust ports 81 are provided, for example, at four locations in the circumferential direction, and each exhaust port 81 is connected to an exhaust pipe (not shown). Further, the fixed cup 62 is provided with a second drain port 82 for draining the resist solution inside the drain port 69 and outside the exhaust port 81, and is connected to a drain officer (not shown). Yes. The diameter of the second drainage port 82 is smaller than the diameter of the drainage port 69.

  A disk-shaped partition wall 83 is fixed on the inner bottom surface of the lower cup half 62 c of the fixed cup 62. Steps are formed along the shape of the inner bottom surface of the fixed cup 62 (specifically, the lower cup half body 62c) on the outer peripheral portion of the partition wall 83. The inner wall 66c is bent along the inclination of the inner wall 66c. A space between the inner bottom surface of the fixed cup 62 and the bottom surface of the rotating cup is substantially evenly separated by a partition wall 83 in the vertical direction. A cup cleaning nozzle 84 is disposed between the partition wall 83 and the bottom surface of the fixed cup 62 at the outer periphery of the partition wall 83, and from the cup cleaning nozzle 84 to the rear surface of the outer periphery of the partition wall 83 and in the airflow control chamber 66. The cleaning liquid is formed so that it can be ejected.

  The nozzle 70 is formed in a rod shape longer than the entire length of the substrate G, and a number of nozzle holes (not shown) are arranged along the longitudinal direction or provided with slits. Is formed to be movable in the X direction and the vertical Z direction. In this case, the nozzle drive unit 73 can move the portal frame 72 along the guide rail 71 and an elevating mechanism (not illustrated) that lifts and lowers a nozzle holding body (not illustrated) attached to the portal frame 72. The linear motor 74 is provided. The nozzle 70 is configured to be housed in a nozzle housing body 75 installed on the fixed frame 90.

  Next, the operation of the resist coating unit (CT) will be described with reference to FIG.

  First, when the transfer arm 23 (see FIG. 4) holding the substrate G moves to a position just above the fixed cup 62, the spin chuck 50 is raised by driving the elevating cylinder 53 (see FIG. 5). When the spin chuck 50 is raised, for example, the surface of the spin chuck 50 reaches a predetermined height, and the substrate G is received by the spin chuck 50 at this height. At this time, the lid 61 is removed from the rotary cup 60 by the robot arm 101.

  Next, the elevating cylinder 53 lowers the spin chuck 50 on which the substrate G is adsorbed to a predetermined height inside the rotary cup 60.

  Next, the resist is discharged toward the substrate G while the nozzle 70 moves on the substrate G by driving the nozzle driving unit 73 while maintaining the height of the spin chuck 50.

  When the discharge of the resist R is completed, the nozzle 70 returns to the nozzle accommodating portion 75 by driving the nozzle driving portion 73. Then, the elevating cylinder 53 lowers the spin chuck 50. Such control can be performed by the CPU 200.

  Thereafter, the rotary cup 60 and the spin chuck 50 rotate integrally. By this rotation, the resist on the substrate G is leveled over the entire substrate. Further, by this rotation, the remaining resist on the substrate G is discharged into the fixed cup 62 by centrifugal force from the discharge hole 63 provided in the rotary cup 60. As a result, a part of the discharged resist becomes mist. Therefore, in order to remove the resist mist generated in this way from the fixed cup 62 and the fixed cup lid 62a, a vacuum pump (not shown) is driven. The vacuum pump may be driven only during the resist coating process or may be always driven.

  When the vacuum pump is driven, the gas flows into the gap between the lid body 61 of the rotary cup 60 and the fixed cup lid 62a from the introduction port 62b. The gas flowing into the gap flows into the narrow channel 65 along the inner wall (inclined surface) of the fixed cup lid 62a. At this time, since the interval of the narrow channel 65 is set smaller than the gap, the flow rate in the narrow channel 65 is faster than the flow rate in the gap.

  The gas accelerated in the narrow channel 65 flows along the inclined surfaces of the first inner wall 66a, the second inner wall 66b, and the third inner wall 66c shown in FIG. That is, in the airflow control chamber 66, the gas becomes a rotating airflow in the direction of arrow C shown in FIG. 6 and also becomes a spiral rotating airflow with the rotational force of the rotating cup 60. This rotating airflow is guided into the buffer chamber 68 through the annular slit 67 in a state where the flow velocity is reduced by colliding with the collision wall 67a, and becomes a gentle rotating airflow in the direction of arrow D in the buffer chamber 68.

  On the other hand, the gas in the vicinity of the bottom surface of the rotating cup 60 flows from the inside to the outside, that is, in the direction of the arrow H as shown in FIG. The gas flowing in the direction of arrow H merges with the rotating airflow in the direction of arrow C. At this time, the direction of the arrow C and the direction of the arrow H are substantially in the same direction at the junction, so that the turbulent flow in the airflow control chamber 66 is prevented from occurring as a laminar flow at the junction. Then, it collides with the collision wall 67a, is introduced into the buffer chamber 68 through the annular slit 67, is decelerated, the resist mist is separated into gas and liquid, and the liquid is discharged from the liquid discharge port 69. Therefore, it is possible to suppress the resist mist generated during the resist processing from being scattered outside.

  A part of the airflow that has passed through the collision wall 67a collides with the protruding wall 66d, returns to the annular slit 67 side, and flows into the buffer chamber 68.

  Further, the gas flowing into the bottom surface side of the partition wall 83 in the rotating airflow flowing in the direction of the arrow C is exhausted from the exhaust port 81. At this time, even if resist mist is mixed in the gas flowing into the exhaust port 81, the resist is discharged through the second drain port 82.

  Next, the substrate processing apparatus (example) according to the present invention described in the above embodiment and the conventional substrate processing apparatus (comparative example) in which the buffer chamber 68 is not provided in the fixed cup 62 are scattered outside the fixed cup 62. The results of experiments for confirming mist will be described.

Atmospheric particle counter {Hitachi DECO Co., Ltd. TS-3600, suction air capacity 1 cf / min} is used to attach a measurement tube to the fixed cup side wall. When the number of mists of 1.0 μmφ or more after 10 seconds, 15 seconds, and 20 seconds was measured, the results shown in Table 1 were obtained.

  As a result of the above experiment, 2031 particles (mist) were detected in the comparative example, whereas 349.4 particles were detected in the example, and about 83% of the particles (mist) were compared to the comparative example. ) It was found that the number could be reduced.

Moreover, when the experiment similar to the above was performed 3 times about the Example, the result as shown in Table 2 was obtained.

  As a result of the above experiment, the number of particles (mist) for the first time was 191 and the number of particles (mist) for the second time was 416, and the number of particles (mist) for the third time was 441. Yes, it is almost the same as the number of particles (mist) detected in Experiment 1 (349.4), and it can be seen that the number of particles (mist) can be reduced by about 83% from the comparative example of the conventional device. It was.

1 is a schematic plan view showing an example of a resist coating and developing processing system including a substrate processing apparatus according to the present invention. It is a schematic front view of the said resist application development processing system. It is a schematic rear view of the resist coating and developing treatment system. It is a top view which shows a resist process block. 1 is a schematic sectional view showing a substrate processing apparatus according to the present invention. The principal part expanded sectional view of the said substrate processing apparatus (a), I part enlarged view (a) of (a), II part enlarged view (c) of (a), and III part enlarged view (d) of (a) is there.

Explanation of symbols

50 Spin chuck (holding means)
60 Rotating cup (Rotating container)
61 Lid 62 Fixed cup (fixed container)
62a Fixed cup lid 62b Inlet port 65 Narrow flow path 66 Air flow control chamber 66a First inner wall 66b Second inner wall 66c Third inner wall 66d Projection wall 66e Drooping wall 67 Annular slit 67a Collision wall 68 Buffer chamber 69 Drainage port 80 Silicone resin film 81 Exhaust port G Glass substrate for LCD (substrate to be processed)

Claims (5)

A holding means for rotatably holding the substrate to be processed, a processing liquid supply means for supplying a processing liquid to the substrate to be processed held by the holding means, and the substrate to be processed held by the holding means are sealed by a lid. A rotating container that can be rotated in synchronization with the holding means, and a stationary container that surrounds the rotating container, has a gas inlet at the top, and has an exhaust at the bottom. A substrate processing apparatus comprising:
The fixed container is connected to a narrow flow path formed between the outer wall of the rotating container and bulges below the rotating container, and an air current is passed through an annular slit provided at the bottom of the air flow control chamber. A substrate processing apparatus comprising: a buffer chamber connected to a control chamber; and a drainage port for draining liquid separated in the buffer chamber. The substrate processing apparatus according to claim 1,
A substrate processing apparatus comprising: a collision wall that stands from one side on the inner peripheral side of the annular slit toward the airflow control chamber side and the buffer chamber side. The substrate processing apparatus according to claim 1,
The air flow control chamber includes a first inner wall having a downward gradient from one side of the narrow channel toward the outer side, and a second inner wall having a downward gradient from the lower end of the first inner wall toward the inner side. And a third inner wall having an upward gradient from the lower end of the second inner wall toward the inward side. The substrate processing apparatus according to claim 3, wherein
A substrate processing apparatus, further comprising a protruding wall protruding from the third inner wall toward the air flow control chamber side. In the substrate processing apparatus of Claim 1 or 3,
A substrate processing apparatus, wherein an inner wall surface of the airflow control chamber is coated with a silicon resin film for suppressing adhesion of a processing liquid.

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