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JP2006156510A - Wiring board - Google Patents

Wiring board Download PDF

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Publication number
JP2006156510A
JP2006156510A JP2004341402A JP2004341402A JP2006156510A JP 2006156510 A JP2006156510 A JP 2006156510A JP 2004341402 A JP2004341402 A JP 2004341402A JP 2004341402 A JP2004341402 A JP 2004341402A JP 2006156510 A JP2006156510 A JP 2006156510A
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JP
Japan
Prior art keywords
cavity
substrate body
wiring board
metal layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004341402A
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Japanese (ja)
Inventor
Makoto Nagai
誠 永井
Setsuo Yada
節男 矢田
Atsushi Uchida
敦士 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
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Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP2004341402A priority Critical patent/JP2006156510A/en
Publication of JP2006156510A publication Critical patent/JP2006156510A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board including a metal layer for reflection having higher close contact strength in the side surface of a cavity to mount a light emitting element. <P>SOLUTION: The wiring board 1 comprises a substrate body 2 formed of a ceramic (insulating) material to include a front surface 3 and a rear surface 4, a cavity 5 opening to the front surface 3 of such substrate body 2 and including an mounting area (a) of a light emitting element 9 to a bottom surface 6, and a metal layer 10 formed continuously along the side surface 7 of at least cavity 5 and the front surface 3 of the substrate body 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、例えば発光ダイオードのような発光素子を実装するための配線基板に関する。   The present invention relates to a wiring board for mounting a light emitting element such as a light emitting diode.

発光素子を実装する配線基板においては、かかる発光素子を実装するキャビティの側面に金属反射層を形成すると共に、当該キャビティ内に封止用樹脂を表面が平坦になるようにして充填することで、上記発光素子からの光を鮮明なものとすることができる。そして、発光素子を実装したキャビティに上記封止用樹脂を過不足なく充填し且つ表面を平坦にするため、セラミック基体の上面に上記キャビティを囲むようにして枠状メタライズ層を形成し、濡れ落ちた封止用樹脂の一部がセラミック基体の上面において、濡れ広がりにくくした発光素子搭載用基板が提案されている(例えば、特許文献1参照)。   In the wiring board for mounting the light emitting element, by forming a metal reflection layer on the side surface of the cavity for mounting the light emitting element and filling the cavity with a sealing resin so that the surface is flat, The light from the light emitting element can be made clear. Then, in order to fill the cavity with the light emitting element with the sealing resin without excess or deficiency and to flatten the surface, a frame-like metallization layer is formed on the upper surface of the ceramic substrate so as to surround the cavity, and the wetted seal is formed. There has been proposed a light-emitting element mounting substrate in which a part of the stopping resin is difficult to spread on the upper surface of a ceramic substrate (for example, see Patent Document 1).

特開2003−347597号公報(第1〜5頁、図1)Japanese Patent Laid-Open No. 2003-347597 (pages 1 to 5, FIG. 1)

前記発光素子搭載用基板では、キャビティの側面に形成する金属反射層とセラミック基体の上面に形成する枠状メタライズ層とは、別々に形成され且つ互いに分離している。
ところで、キャビティの側面に形成した金属反射層は、当該キャビティに発光素子を実装した後に封止用樹脂が充填されると、かかる封止用樹脂の硬化に伴う収縮応力を受ける。特に、キャビティの側面と配線基板の表面との間のコーナ付近では、上記応力が顕著に発生するため、かかる位置の金属反射層は、密着強度が弱く、甚だしくは剥離に至るおそれがあった。
In the light emitting element mounting substrate, the metal reflective layer formed on the side surface of the cavity and the frame-like metallized layer formed on the upper surface of the ceramic substrate are formed separately and separated from each other.
By the way, the metal reflective layer formed on the side surface of the cavity is subjected to shrinkage stress accompanying the curing of the sealing resin when the sealing resin is filled after the light emitting element is mounted in the cavity. In particular, in the vicinity of the corner between the side surface of the cavity and the surface of the wiring substrate, the stress is remarkably generated. Therefore, the metal reflective layer at such a position has a low adhesion strength, and there is a possibility that it may be severely peeled off.

本発明は、前記背景技術において説明した問題点を解決し、発光素子を実装するキャビティの側面に高い密着強度を伴った反射用の金属層を有する配線基板を提供する、ことを課題とする。   An object of the present invention is to solve the problems described in the background art and to provide a wiring board having a reflective metal layer with high adhesion strength on the side surface of a cavity in which a light emitting element is mounted.

課題を解決するための手段および発明の効果Means for Solving the Problems and Effects of the Invention

本発明は、前記課題を解決するため、キャビティの側面に形成する金属層を基板本体の表面に跨って連続して形成する、ことに着想して成されたものである。
即ち、本発明の配線基板(請求項1)は、絶縁材からなり且つ表面および裏面を有する基板本体と、かかる基板本体の表面に開口し且つ底面に発光素子の実装エリアを有するキャビティと、少なくともかかるキャビティの側面および上記基板本体の表面に沿って連続して形成された金属層と、を含む、ことを特徴とする。
In order to solve the above-described problems, the present invention has been conceived in that the metal layer formed on the side surface of the cavity is continuously formed across the surface of the substrate body.
That is, the wiring board of the present invention (Claim 1) includes a substrate body made of an insulating material and having a front surface and a back surface, a cavity having an opening on the surface of the substrate body and having a mounting area for a light emitting element on the bottom surface, and at least And a metal layer continuously formed along the side surface of the cavity and the surface of the substrate body.

これによれば、前記金属層は、前記キャビティの側面および前記基板本体の表面に沿って連続して形成されている。このため、追って当該キャビティに封止用樹脂を充填した際に、かかる封止用樹脂の硬化に伴う収縮応力が金属層におけるキャビティ側部分と基板本体の表面に位置する表面側部分との間のコーナ付近に集中しても、かかる収縮応力を金属層における上記表面側部分にも分散できる。従って、金属層のうちキャビティ側部分の密着強度が向上するため、当該金属層の表面である反射面において、発光素子からの発光を効率良く且つ安定して反射することが可能となる。
尚、前記絶縁材には、例えばアルミナを主成分とするセラミックと例えばエポキシ系の合成樹脂とが含まれる。
また、上記金属層のうち、基板本体の表面側部分は、次述する外部導体と導通可能に接続されていても良い。即ち、金属層は、そのキャビティ側部分が光の反射面になると共に、マザーボードなどの外部回路との導通経路を兼ねることも可能である。
According to this, the metal layer is continuously formed along the side surface of the cavity and the surface of the substrate body. For this reason, when the cavity is filled with the sealing resin later, the shrinkage stress accompanying the curing of the sealing resin is caused between the cavity side part in the metal layer and the surface side part located on the surface of the substrate body. Even if concentrated in the vicinity of the corner, the shrinkage stress can be dispersed also in the surface side portion of the metal layer. Therefore, since the adhesion strength of the cavity side portion of the metal layer is improved, it is possible to efficiently and stably reflect the light emitted from the light emitting element on the reflective surface which is the surface of the metal layer.
The insulating material includes, for example, a ceramic mainly composed of alumina and, for example, an epoxy-based synthetic resin.
Moreover, the surface side part of a board | substrate body among the said metal layers may be connected with the external conductor mentioned below so that conduction | electrical_connection is possible. That is, the metal layer can serve as a light reflection surface at the cavity side and also serve as a conduction path with an external circuit such as a mother board.

また、本発明には、前記基板本体の表面および裏面とこれらの間の外側面とに沿って連続して形成された外部導体を更に有する、配線基板(請求項2)も含まれる。
これによれば、基板本体に内蔵された配線層や内部電極などを、上記外部導体を介して、当該配線基板を実装すべきマザーボードなどに導通できる。このため、キャビティに発光素子を実装し且つ当該キャビティの側面と上記基板本体の表面とに沿って金属層を連続して形成しても、基板本体の内部配線層などの動作に支障を来すことなく、所要の導通を確保することができる。
Further, the present invention includes a wiring board (Claim 2) further including an outer conductor formed continuously along the front and back surfaces of the substrate body and the outer surface between them.
According to this, the wiring layer, the internal electrode and the like built in the board body can be conducted to the mother board or the like on which the wiring board is to be mounted via the external conductor. Therefore, even if the light emitting element is mounted in the cavity and the metal layer is continuously formed along the side surface of the cavity and the surface of the substrate body, the operation of the internal wiring layer of the substrate body is hindered. Therefore, the required conduction can be ensured.

付言すれば、本発明の配線基板は、前記外部導体は、前記基板本体の外側面に開口する凹部または隣接する外側面同士間のコーナに開口する凹部の内側に形成される、とすることも可能である。これによる場合、キャビティに発光素子が実装され且つ当該キャビティの側面と前記基板本体の表面とに沿って金属層が連続して形成されていても、基板本体に内蔵された配線層や内部電極などを、不用意なショートを生じることなく、上記凹部内に設けた外部導体を介して、外部の回路機器と導通させることが可能となる。   In other words, the wiring board of the present invention may be configured such that the outer conductor is formed inside a recess opening in an outer surface of the substrate body or a recess opening in a corner between adjacent outer surfaces. Is possible. In this case, even if the light emitting element is mounted in the cavity and the metal layer is continuously formed along the side surface of the cavity and the surface of the substrate body, the wiring layer and the internal electrode incorporated in the substrate body, etc. Can be electrically connected to an external circuit device via an external conductor provided in the recess without causing an inadvertent short circuit.

更に付言すれば、本発明の配線基板は、前記キャビティの側面は、当該キャビティの底面から前記基板本体の表面に向かって外側向きに広がる傾斜面である、とすることも可能である。これによる場合、発光素子から照射された多量の光を広範な角度で反射することが可能となる。   In addition, in the wiring board of the present invention, the side surface of the cavity may be an inclined surface that extends outward from the bottom surface of the cavity toward the surface of the substrate body. In this case, a large amount of light emitted from the light emitting element can be reflected at a wide range of angles.

以下において、本発明を実施するための最良の形態について説明する。
図1は、本発明における一形態の配線基板1を示す平面図、図2は、図1中のX−X線の矢視に沿った垂直断面図、図3は、図1中のY−Y線の矢視に沿った垂直断面図、図4は、図1中のZ−Z線の矢視に沿った垂直断面図である。
配線基板1は、図1乃至図4に示すように、平面視がほぼ正方形を呈し表面3および裏面4を有する基板本体2と、かかる基板本体2の表面3に開口し且つ平面視が円形のキャビティ5と、かかるキャビティ5の側面7および基板本体2の表面3に沿って連続して形成された金属層10と、を含んでいる。
上記基板本体2は、例えばアルミナを主成分とするセラミック(絶縁材)からなり、その内部には図示しない配線層や内部電極が所要のパターンで形成され、これらの間にビア導体(図示せず)が介在している。因みに、基板本体2のサイズは、約5mm×5mm×0.9mmである。
In the following, the best mode for carrying out the present invention will be described.
1 is a plan view showing a wiring board 1 according to an embodiment of the present invention, FIG. 2 is a vertical sectional view taken along the line XX in FIG. 1, and FIG. FIG. 4 is a vertical cross-sectional view taken along the line ZZ in FIG. 1, and FIG. 4 is a vertical cross-sectional view taken along the line ZZ in FIG.
As shown in FIGS. 1 to 4, the wiring substrate 1 has a substrate body 2 having a substantially square shape in plan view and having a front surface 3 and a back surface 4, and an opening in the front surface 3 of the substrate body 2 and a circular shape in plan view. A cavity 5 and a metal layer 10 continuously formed along the side surface 7 of the cavity 5 and the surface 3 of the substrate body 2 are included.
The substrate body 2 is made of ceramic (insulating material) mainly composed of alumina, for example, and a wiring layer and internal electrodes (not shown) are formed in a predetermined pattern therein, and via conductors (not shown) are formed therebetween. ) Is present. Incidentally, the size of the substrate body 2 is about 5 mm × 5 mm × 0.9 mm.

また、キャビティ5の底面6には、平面視が正方形を呈する例えば発光ダイオードなどの発光素子9がロウ材8またはエポキシ系樹脂を介して、その実装エリアaに実装されている。尚、かかるキャビティ5のサイズは、内径約3.6mm×深さ約0.45mmであり、上記ロウ材8は、例えばAu−Sn系の低融点合金からなる。
更に、キャビティ5の底面6、側面7、および基板本体2の表面3には、WまたはMoからなる断面階段形のメタライズ層13が形成され、その表面には、図示しないNiメッキ層が厚さ約5μmにて被覆されている。
On the bottom surface 6 of the cavity 5, a light emitting element 9 such as a light emitting diode having a square shape in plan view is mounted in the mounting area “a” via a brazing material 8 or an epoxy resin. The size of the cavity 5 is about 3.6 mm inside diameter × about 0.45 mm depth, and the brazing material 8 is made of, for example, an Au—Sn low melting point alloy.
Further, a metallized layer 13 having a stepped cross section made of W or Mo is formed on the bottom surface 6 and the side surface 7 of the cavity 5 and the surface 3 of the substrate body 2, and a Ni plating layer (not shown) has a thickness on the surface. It is coated with about 5 μm.

金属層10は、厚さ約10〜30μmの例えばAg、Pt、Rh、またはPdメッキ層からなり、図2および同図中の一点鎖線部分Cの拡大図で示すように、キャビティ5の側面7に沿って傾斜したキャビティ側部分11と、該キャビティ側部分11の上端と連続し且つ基板本体2の表面3に沿って形成された表面側部分12と、を一体に有する。金属層10のキャビティ側部分11は、発光素子9が発光した光を鮮明に反射し、かかる光を図示しない外部側に放射する。
上記キャビティ側部分11とメタライズ層13との内側には、断面ほぼ三角形のAg−Cu系合金からなるロウ材14が充填され、その傾斜した表面に、図示しないNiメッキ層を介して、金属層10のキャビティ側部分11がAgメッキなどされている。
The metal layer 10 is made of, for example, an Ag, Pt, Rh, or Pd plating layer having a thickness of about 10 to 30 μm. As shown in FIG. 2 and an enlarged view of a one-dot chain line portion C in FIG. Are integrally formed with a cavity-side portion 11 that is inclined along the upper surface of the cavity-side portion 11 and a surface-side portion 12 that is continuous with the upper end of the cavity-side portion 11 and is formed along the surface 3 of the substrate body 2. The cavity side portion 11 of the metal layer 10 clearly reflects the light emitted from the light emitting element 9 and emits the light to the outside (not shown).
The inside of the cavity side portion 11 and the metallized layer 13 is filled with a brazing material 14 made of an Ag—Cu alloy having a substantially triangular cross section, and a metal layer is formed on the inclined surface via a Ni plating layer (not shown). Ten cavity-side portions 11 are Ag-plated or the like.

図1乃至図4に示すように、基板本体2の四隅には、平面視にて円弧形の凹部(外側面)15が形成され、これらの表面全体には断面が円弧形の外部導体16,20が形成されている。
図1,図3に示すように、外部導体16は、基板本体2の表面3に位置する表面電極17と、基板本体2の裏面4に位置する裏面電極18と、を連続して有する。また、図1,図4に示すように、外部導体20は、基板本体2の表面3に位置し且つ前記金属層10の表面側部分12に接続する帯状の接続部21と、基板本体2の裏面4に位置する裏面電極22と、を連続して有する。
尚、上記外部導体16,20、表面電極17、裏面電極18,22、および接続部21は、例えば厚さ約10〜30μmのW、Mo、またはAgなどからなる。
As shown in FIGS. 1 to 4, arc-shaped concave portions (outer surfaces) 15 are formed at the four corners of the substrate body 2 in a plan view, and the outer conductor has an arc-shaped cross section on the entire surface. 16, 20 are formed.
As shown in FIGS. 1 and 3, the external conductor 16 has a front surface electrode 17 located on the front surface 3 of the substrate body 2 and a back surface electrode 18 located on the back surface 4 of the substrate body 2. As shown in FIGS. 1 and 4, the external conductor 20 is located on the surface 3 of the substrate body 2 and is connected to the surface side portion 12 of the metal layer 10, A back electrode 22 located on the back surface 4 continuously.
The external conductors 16 and 20, the front surface electrode 17, the back surface electrodes 18 and 22, and the connection portion 21 are made of, for example, W, Mo, or Ag having a thickness of about 10 to 30 μm.

以上のような配線基板1は、キャビティ5の底面6に位置する実装エリアaにロウ材8などを介して発光素子9を実装した後、図5に示すように、その周囲のキャビティ5内に封止用樹脂rが溶融状態で充填され、且つその表面が基板本体2の表面3と面一になるようして固化される。この際、封止用樹脂rの硬化に伴う収縮応力が、金属層10のキャビティ側部分11と基板本体2の表面3上の表面側部分12との間のコーナ付近に集中しても、かかる収縮応力を上記キャビティ側部分11と連続する表面側部分12にも分散できる。
従って、反射面である金属層10のキャビティ側部分11の密着強度が向上するため、発光素子9からの発光を鮮明に且つ安定して反射することが可能となる。
In the wiring substrate 1 as described above, after the light emitting element 9 is mounted on the mounting area a located on the bottom surface 6 of the cavity 5 via the brazing material 8 or the like, as shown in FIG. The sealing resin r is filled in a molten state and solidified so that the surface thereof is flush with the surface 3 of the substrate body 2. At this time, even if the shrinkage stress accompanying the curing of the sealing resin r is concentrated in the vicinity of the corner between the cavity side portion 11 of the metal layer 10 and the surface side portion 12 on the surface 3 of the substrate body 2, it is applied. The shrinkage stress can also be distributed to the surface side portion 12 continuous with the cavity side portion 11.
Accordingly, the adhesion strength of the cavity-side portion 11 of the metal layer 10 that is the reflection surface is improved, and thus light emission from the light-emitting element 9 can be clearly and stably reflected.

封止用樹脂rでキャビティ5内を封止された配線基板1は、図5に示すように、例えばマザーボードのようなプリント基板24の表面25に位置する図示しない表面電極と、外部導体16(20)とその裏面電極18(22)とに跨って形成されるロウ材26を介在して、当該プリント基板24の表面25に実装される。
以上のような配線基板1は、表面にWまたはMoなどの金属粉末を含む導電性ペーストを予め所定のパターンで形成したアルミナを主成分とする複数枚のグリーンシートを積層・圧着し、形成されたキャビティ5の側面7に上記導電性ペーストを印刷して得られた当該積層体を所要の温度域で焼成した後、焼成されたメタライズ層13やロウ材14などの表面にAgメッキなどして製造される。
As shown in FIG. 5, the wiring board 1 sealed in the cavity 5 with the sealing resin r has a surface electrode (not shown) located on a surface 25 of a printed board 24 such as a mother board and an external conductor 16 ( 20) and the back electrode 18 (22) thereof, and is mounted on the surface 25 of the printed circuit board 24 with a brazing material 26 formed therebetween.
The wiring board 1 as described above is formed by laminating and press-bonding a plurality of green sheets mainly composed of alumina in which a conductive paste containing a metal powder such as W or Mo is formed in a predetermined pattern on the surface. The laminate obtained by printing the conductive paste on the side surface 7 of the cavity 5 is fired in a required temperature range, and then the surface of the fired metallized layer 13 or brazing material 14 is subjected to Ag plating or the like. Manufactured.

あるいは、配線基板1は、以下のような多数個取りの方法でも製造できる。
先ず、図6に示すように、個別にキャビティ5を有し且つ追って基板本体2となる複数の製品部分sにおけるほぼ上半部を縦・横方向に沿って有すると共に、複数枚のグリーンシートを積層した大版の積層体S1を用意する。図6中の破線で示す切断予定線cの交点ごとには、プレス打ち抜きなどで円柱形の貫通孔hが追って形成される。
図7に示すように、大版の積層体S1における表面3側には、スクリーンマスクMが載置され、各製品部分sごとのキャビティ5の側面7の真上付近には、当該スクリーンマスクMにおける平面視がリング形状で且つ所要の幅寸法の網目部分mを配置する。図7中の一点鎖線の矢印で示すように、リング形状の網目部分mの付近では、下向きにエアAを吸引させる。尚、スクリーンマスクMのうち、網目部分m以外の部分は、乳剤の塗布により目詰まりとされている。
Alternatively, the wiring board 1 can be manufactured by a multi-cavity method as described below.
First, as shown in FIG. 6, each of the plurality of product portions s that have the cavities 5 and are to be the substrate body 2 is provided with substantially upper half portions along the vertical and horizontal directions, and a plurality of green sheets are provided. A large-sized laminated body S1 is prepared. At each intersection of the planned cutting line c indicated by a broken line in FIG. 6, a cylindrical through hole h is formed later by press punching or the like.
As shown in FIG. 7, a screen mask M is placed on the surface 3 side of the large-sized laminate S1, and the screen mask M is located near the side surface 7 of the cavity 5 for each product portion s. A mesh portion m having a ring shape in a plan view and a required width dimension is disposed. As indicated by the one-dot chain line arrow in FIG. 7, air A is sucked downward in the vicinity of the ring-shaped mesh portion m. In the screen mask M, portions other than the mesh portion m are clogged by the emulsion coating.

かかる状態で、図7中の実線の矢印で示すように、スクリーンマスクMの上面に沿って導電性ペーストpを斜め姿勢のスキージ28で押圧しつつスライドさせる。この結果、リング形状の粗目部分mを導電性ペーストpが通過するため、前記メタライズ層13を印刷できる。
次に、各製品部分sのほぼ下半部となる複数のグリーンシートに前記積層体S1を積層し、大版の積層体S2を形成した後、前記切断予定線cの交点ごと貫通孔hを形成する。次いで、図8に示すように、かかる積層体S2における表面3側に載置したスクリーンマスクMにおける貫通孔hの真上には、かかる貫通孔hの内径よりも大径の網目部分mを配置する。
尚、各製品部分sにおけるキャビティ5の底面6には、前記同様の導電性ペーストを印刷して前記メタライズ層13の水平部分を形成する。
In this state, as shown by the solid line arrow in FIG. 7, the conductive paste p is slid along the upper surface of the screen mask M while being pressed by the oblique squeegee 28. As a result, since the conductive paste p passes through the ring-shaped rough portion m, the metallized layer 13 can be printed.
Next, after laminating the laminate S1 on a plurality of green sheets that are substantially the lower half of each product portion s to form a large laminate S2, through holes h are formed at the intersections of the planned cutting line c. Form. Next, as shown in FIG. 8, a mesh portion m having a diameter larger than the inner diameter of the through hole h is arranged immediately above the through hole h in the screen mask M placed on the surface 3 side in the laminated body S2. To do.
Note that the same conductive paste is printed on the bottom surface 6 of the cavity 5 in each product portion s to form the horizontal portion of the metallized layer 13.

かかる状態で、図8中の一点鎖線の矢印で示すように、大版の積層体S2の裏面4側からエアAを吸引しつつ、前記と同様に導電性ペーストpを斜め姿勢のスキッジ28で押圧しつつスライドさせる。この結果、前記外部導体16,20およびその表面電極18を印刷・形成できる。この際、スクリーンマスクMにおける網目部分mの一部をキャビティ5側に延ばすことで、前記接続部21を帯状にして同時に形成することができる。尚、前記と同様の方法により、前記裏面電極18,22も積層体S2の裏面4に印刷・形成される。
そして、以上のような積層体S2を所要の温度域で焼成した後、前記メタライズ層13の内側にロウ材14を充填し且つその表面および基板本体2の表面3上のメタライズ層13の上に、Niメッキを介してAgメッキを施して前記金属層10を形成する。かかるNiメッキやAgメッキは、外部電極20に専用のメッキ電極棒を接触させて施される。
最後に、切断予定線cに沿って切断することにより、複数個の配線基板1を製造することができる。
In this state, as indicated by the one-dot chain line arrow in FIG. 8, the air paste A is sucked from the back surface 4 side of the large-sized laminate S2 and the conductive paste p is slanted by the skid 28 in the same manner as described above. Slide while pressing. As a result, the outer conductors 16 and 20 and the surface electrode 18 thereof can be printed and formed. At this time, by extending a part of the mesh part m in the screen mask M to the cavity 5 side, the connection part 21 can be formed in a band shape at the same time. In addition, the said back surface electrodes 18 and 22 are printed and formed in the back surface 4 of laminated body S2 by the method similar to the above.
And after baking the laminated body S2 as described above in a required temperature range, the inside of the metallized layer 13 is filled with the brazing material 14, and on the surface and on the metallized layer 13 on the surface 3 of the substrate body 2. The metal layer 10 is formed by performing Ag plating through Ni plating. Such Ni plating or Ag plating is performed by bringing a dedicated plating electrode bar into contact with the external electrode 20.
Finally, a plurality of wiring boards 1 can be manufactured by cutting along the planned cutting line c.

図9は、異なる形態の配線基板30を示す平面図、図10は、図9中のV−V線の矢視に沿った垂直断面図、図11は、配線基板30の部分底面図である。
配線基板30は、図9,図10に示すように、アルミナなどを主成分とするセラミック(絶縁材)からなり且つ表面33および裏面34を有するほぼ直方体の基板本体32と、かかる基板本体32の表面33に開口する平面視が楕円形状のキャビティ35と、当該キャビティ35の傾斜した側面37および基板本体32の表面33に沿って連続して形成された金属層40と、を含んでいる。
基板本体32は、図10に示すように、複数のセラミック層s1〜s9を積層し且つ一体に焼成したもので、かかるセラミック層s1〜s9の間には、図示しない内部配線層や内部電極が所定のパターンで形成されている。
9 is a plan view showing a wiring board 30 of a different form, FIG. 10 is a vertical sectional view taken along the line VV in FIG. 9, and FIG. 11 is a partial bottom view of the wiring board 30. .
As shown in FIGS. 9 and 10, the wiring substrate 30 is made of a ceramic (insulating material) mainly composed of alumina or the like and has a substantially rectangular parallelepiped substrate body 32 having a front surface 33 and a back surface 34, and the substrate body 32. A cavity 35 having an elliptical shape in plan view that opens to the surface 33, and an inclined side surface 37 of the cavity 35 and a metal layer 40 formed continuously along the surface 33 of the substrate body 32 are included.
As shown in FIG. 10, the substrate body 32 is formed by laminating a plurality of ceramic layers s1 to s9 and firing them integrally. Between the ceramic layers s1 to s9, there are internal wiring layers and internal electrodes (not shown). It is formed with a predetermined pattern.

また、前記キャビティ35は、平面視が楕円形で且つ中央部に実装エリアaを有する底面36と、平面視が楕円形で且つほぼ楕円錐形状を呈する側面37とからなる。更に、金属層40は、Ag、Rh、Pdなどからなり、図9,図10に示すように、キャビティ35の側面37上に形成された楕円錐形状のキャビティ側部分41と、その上端に接続し且つ基板本体32の表面33に沿って形成された平面視が楕円形の表面側部分42と、からなる。尚、金属層40は、図示しないWなどのメタライズ層およびNiメッキ層を介して、Agメッキ層などを被覆して形成されている。
前記キャビティ35の底面36における実装エリアa上には、例えばAu−Sn系低融点合金などからなるロウ材38またはエポキシ系樹脂を介して、発光ダイオードなどの発光素子39が実装される。
The cavity 35 is composed of a bottom surface 36 that is elliptical in plan view and has a mounting area a in the center, and a side surface 37 that is elliptical in plan view and has a substantially elliptical cone shape. Further, the metal layer 40 is made of Ag, Rh, Pd, etc., and is connected to the upper end of the cavity side portion 41 having an elliptical cone shape formed on the side surface 37 of the cavity 35 as shown in FIGS. In addition, the surface side portion 42 having an elliptical shape in plan view formed along the surface 33 of the substrate body 32 is formed. The metal layer 40 is formed by covering an Ag plating layer or the like via a metallization layer such as W and a Ni plating layer (not shown).
A light emitting element 39 such as a light emitting diode is mounted on the mounting area a in the bottom surface 36 of the cavity 35 through a brazing material 38 made of, for example, an Au—Sn low melting point alloy or an epoxy resin.

図9,図10に示すように、キャビティ35の底面36には、接続端子43が形成され、ボンデイング・ワイヤwを介して発光素子39と個別に導通されている。接続端子43は、基板本体32のセラミック層s6〜s9を貫通するビア導体44に接続されている。
また、基板本体32の各側面に中央付近には、平面視がほぼ半円形の凹部45が個別に形成され、各凹部45のほぼ下半分には、断面ほぼ半円形の外部導体46が形成されている。更に、基板本体32の四隅には、平面視にて円弧形の凹部48が形成され、これらの表面全体には断面が円弧形の外部導体49が形成されている。図9〜図11中の左右に示すように、外部導体46は、基板本体32の裏面34に形成された底面視がほぼT字形の接続部47と接続され、かかる接続部47には、前記ビア導体44の下端が接続されている。
As shown in FIGS. 9 and 10, a connection terminal 43 is formed on the bottom surface 36 of the cavity 35, and is individually connected to the light emitting element 39 through the bonding wire w. The connection terminal 43 is connected to a via conductor 44 that passes through the ceramic layers s <b> 6 to s <b> 9 of the substrate body 32.
Further, a concave portion 45 having a substantially semicircular shape in plan view is individually formed in the vicinity of the center of each side surface of the substrate body 32, and an outer conductor 46 having a substantially semicircular cross section is formed in a substantially lower half of each concave portion 45. ing. Further, arc-shaped recesses 48 are formed at the four corners of the substrate body 32 in plan view, and outer conductors 49 having an arc-shaped cross section are formed on the entire surface. As shown on the left and right in FIGS. 9 to 11, the external conductor 46 is connected to a connection portion 47 formed on the back surface 34 of the substrate body 32 in a bottom view, which is substantially T-shaped. The lower end of the via conductor 44 is connected.

図9〜図11に示すように、基板本体32の四隅に位置する各外部導体49と、基板本体32の長辺の側面中央付近に位置する各外部導体46とは、基板本体32の裏面34に形成された裏面電極50と個別に接続されている。これらの裏面電極50は、当該配線基板30を図示しないマザーボードの表面電極にロウ材を介して実装するために活用される。
尚、外部導体46,49、裏面電極50、および接続部47は、例えば厚さ約10〜30μmのWまたはMoなどからなり、前記ビア導体44は、直径約50〜300μmのWまたはMoなどからなる。
As shown in FIGS. 9 to 11, the outer conductors 49 located at the four corners of the substrate body 32 and the outer conductors 46 located near the center of the side surface of the long side of the substrate body 32 are the back surface 34 of the substrate body 32. Are individually connected to the back electrode 50 formed on the substrate. These backside electrodes 50 are utilized for mounting the wiring board 30 on a front surface electrode of a mother board (not shown) via a brazing material.
The outer conductors 46 and 49, the back electrode 50, and the connecting portion 47 are made of, for example, W or Mo having a thickness of about 10 to 30 μm, and the via conductor 44 is made of W or Mo having a diameter of about 50 to 300 μm. Become.

以上のような配線基板30は、キャビティ35の底面36に位置する実装エリアaにロウ材38などを介して発光素子39を実装した後、その周囲のキャビティ35内に図示しない封止用樹脂が溶融状態で充填され、且つその表面が基板本体32の表面33と面一になるように固化される。この際、上記封止用樹脂の硬化に伴う収縮応力が、金属層40のキャビティ側部分41と基板本体32の表面33上の表面側部分42との間のコーナ付近に集中しても、かかる収縮応力を、表面部分42に分散できる。従って、金属層40のキャビティ側部分41の密着強度が向上し、反射面である当該部分41の傾斜した表面が安定するため、発光素子39からの多量の発光を効率良くに且つ安定して反射することが可能となる。   In the wiring board 30 as described above, after mounting the light emitting element 39 on the mounting area a located on the bottom surface 36 of the cavity 35 via the brazing material 38 or the like, a sealing resin (not shown) is placed in the surrounding cavity 35. It is filled in a molten state and solidified so that its surface is flush with the surface 33 of the substrate body 32. At this time, even if the shrinkage stress accompanying the curing of the sealing resin is concentrated in the vicinity of the corner between the cavity side portion 41 of the metal layer 40 and the surface side portion 42 on the surface 33 of the substrate body 32, it is applied. The shrinkage stress can be distributed to the surface portion 42. Accordingly, the adhesion strength of the cavity-side portion 41 of the metal layer 40 is improved and the inclined surface of the portion 41 that is the reflecting surface is stabilized, so that a large amount of light emitted from the light-emitting element 39 is efficiently and stably reflected. It becomes possible to do.

以上のような配線基板30も、表面にWまたはMoなどの金属粉末を含む導電性ペーストを予め所定のパターンで形成したアルミナを主成分とする複数枚のグリーンシートを積層・圧着し、当該積層体を所要の温度域で焼成した後、焼成後のメタライズ層の表面にAgメッキなどして製造される。
また、前記キャビティ35を形成するセラミック層s1〜s5となるグリーンシートgは、図示しないポンチPとダイの貫通孔との間に所要のクリアランスを置いて打ち抜き加工をすることにより形成される。
The wiring board 30 as described above is also laminated and pressure-bonded with a plurality of green sheets mainly composed of alumina, the surface of which is a conductive paste containing a metal powder such as W or Mo formed in advance in a predetermined pattern. After the body is fired at a required temperature range, the surface of the fired metallized layer is manufactured by Ag plating or the like.
The green sheets g to be the ceramic layers s1 to s5 forming the cavity 35 are formed by punching with a required clearance between the punch P (not shown) and the through hole of the die.

本発明は、以上において説明した各形態に限定されるものではない。
前記基板本体2,32を形成する絶縁材であるセラミックは、例えばムライトや窒化アルミニウムを主成分とするもの、あるいはガラス−セラミックとしても良い。
また、前記基板本体2,32を形成する絶縁材をエポキシ系樹脂などとしても良く、かかる樹脂の薄板または金属の薄板の表面上に、例えばエポキシ系樹脂からなる複数層の樹脂絶縁層を順次積層し、公知のフォトリソグラフィ技術によって、比較的上方の各樹脂絶縁層にキャビティを形成すると共に、その側面および開口付近の表面に沿って連続する前記金属層をメッキで形成しても良い。
The present invention is not limited to the embodiments described above.
The ceramic which is an insulating material forming the substrate bodies 2 and 32 may be, for example, a material mainly containing mullite or aluminum nitride, or a glass-ceramic.
The insulating material forming the substrate bodies 2 and 32 may be an epoxy resin, and a plurality of resin insulating layers made of, for example, an epoxy resin are sequentially laminated on the surface of the resin thin plate or metal thin plate. Then, a cavity may be formed in each relatively upper resin insulating layer by a known photolithography technique, and the metal layer continuous along the side surface and the surface near the opening may be formed by plating.

更に、前記配線基板30におけるキャビティ35の側面37を垂直して、かかる側面に沿って金属層40のキャビティ側部分41を形成しても良い。
また、キャビティの形状は、前記円形や楕円形に限らず、平面視を長円形としたり、あるいは正方形または長方形とし且つこれらの四隅に導電性ペーストを円弧形に充填して、平面視で楕円形または長円形とすると共に、これらの側面に金属層のキャビティ側部分を形成するようにしても良い。
加えて、本発明の配線基板は、1個の基板本体の表面に開口するキャビティを複数としたり、単一のキャビティの底面に複数の実装エリアを配置し、これらに発光素子を個別に実装する形態とすることも可能である。
Furthermore, the side surface 37 of the cavity 35 in the wiring substrate 30 may be perpendicular to the cavity side portion 41 of the metal layer 40 along the side surface.
Further, the shape of the cavity is not limited to the circular shape or the elliptical shape, but the elliptical shape in a plan view, or a square or a rectangle, and a conductive paste is filled in an arc shape at these four corners, and the elliptical shape in a plan view. In addition to the shape or oval shape, the cavity side portion of the metal layer may be formed on these side surfaces.
In addition, the wiring board of the present invention has a plurality of cavities opened on the surface of one substrate body, or a plurality of mounting areas arranged on the bottom surface of a single cavity, and light emitting elements are individually mounted on these. It is also possible to adopt a form.

本発明における一形態の配線基板を示す平面図。The top view which shows the wiring board of one form in this invention. 図1中のX−X線の矢視に沿った断面図とその一部を拡大した拡大図。Sectional drawing along the arrow of XX in FIG. 1, and the enlarged view which expanded the part. 図1中のY−Y線の矢視に沿った断面図。Sectional drawing along the arrow of the YY line in FIG. 図1中のZ−Z線の矢視に沿った断面図。Sectional drawing along the arrow of the ZZ line in FIG. 上記配線基板の実装状態を示す概略断面図。The schematic sectional drawing which shows the mounting state of the said wiring board. 上記配線基板を得るための一製造工程を示す概略図。Schematic which shows one manufacturing process for obtaining the said wiring board. 図6に続く製造工程を示す概略図。Schematic which shows the manufacturing process following FIG. 図7に続く製造工程を示す概略図。Schematic which shows the manufacturing process following FIG. 異なる形態の配線基板を示す平面図。The top view which shows the wiring board of a different form. 図9中のV−V線の矢視に沿った垂直断面図。FIG. 10 is a vertical sectional view taken along line VV in FIG. 9; 上記配線基板を示す部分底面図。The partial bottom view which shows the said wiring board.

符号の説明Explanation of symbols

1,30……………………配線基板
2,32……………………基板本体
3,33……………………表面
4,34……………………裏面
5,35……………………キャビティ
6,36……………………底面
7,37……………………側面
9,39……………………発光素子
10,40…………………金属層
11,41…………………キャビティ側部分
12,42…………………表面側部分
15,45,48…………凹部(外側面)
16,20,46,49…外部導体
a……………………………実装エリア
s1〜s9…………………セラミック層(絶縁材)
1,30 …………………… Wiring board 2,32 …………………… Board body 3,33 …………………… Front side 4,34 …………………… Back side 5, 35 …………………… Cavity 6, 36 …………………… Bottom 7, 37 …………………… Side 9, 39 …………………… Light Emitting Element 10 , 40 .................. Metal layer 11, 41 ............... Cavity side portion 12, 42 .................. Surface side portion 15, 45, 48 ............ Recess (outside surface) )
16, 20, 46, 49 ... Outer conductor a ..................... Mounting area s1 to s9 ............ Ceramic layer (insulating material)

Claims (2)

絶縁材からなり且つ表面および裏面を有する基板本体と、
上記基板本体の表面に開口し且つ底面に発光素子の実装エリアを有するキャビティと、
少なくとも上記キャビティの側面および上記基板本体の表面に沿って連続して形成された金属層と、を含む、
ことを特徴とする配線基板。
A substrate body made of an insulating material and having a front surface and a back surface;
A cavity having an opening on the surface of the substrate body and a mounting area of the light emitting element on the bottom surface;
A metal layer formed continuously along at least the side surface of the cavity and the surface of the substrate body,
A wiring board characterized by that.
前記基板本体の表面および裏面とこれらの間の外側面とに沿って連続して形成された外部導体を更に有する、
ことを特徴とする請求項1に記載の配線基板。
And further including an outer conductor formed continuously along the front and back surfaces of the substrate body and the outer surface therebetween.
The wiring board according to claim 1.
JP2004341402A 2004-11-26 2004-11-26 Wiring board Withdrawn JP2006156510A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016593A (en) * 2006-07-05 2008-01-24 Ngk Spark Plug Co Ltd Wiring board for mounting light emitting element
JP2012151436A (en) * 2010-11-05 2012-08-09 Rohm Co Ltd Semiconductor light emitting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008016593A (en) * 2006-07-05 2008-01-24 Ngk Spark Plug Co Ltd Wiring board for mounting light emitting element
JP2012151436A (en) * 2010-11-05 2012-08-09 Rohm Co Ltd Semiconductor light emitting device
US9276187B2 (en) 2010-11-05 2016-03-01 Rohm Co., Ltd. Semiconductor light emitting device
US9496473B2 (en) 2010-11-05 2016-11-15 Rohm Co., Ltd. Semiconductor light emitting device
US9728523B2 (en) 2010-11-05 2017-08-08 Rohm Co., Ltd. Semiconductor light emitting device
US10056357B2 (en) 2010-11-05 2018-08-21 Rohm Co., Ltd. Semiconductor light emitting device

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