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JP2006153475A5 - - Google Patents

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Publication number
JP2006153475A5
JP2006153475A5 JP2004340250A JP2004340250A JP2006153475A5 JP 2006153475 A5 JP2006153475 A5 JP 2006153475A5 JP 2004340250 A JP2004340250 A JP 2004340250A JP 2004340250 A JP2004340250 A JP 2004340250A JP 2006153475 A5 JP2006153475 A5 JP 2006153475A5
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JP
Japan
Prior art keywords
protective film
phosphor layer
conversion panel
image conversion
photostimulable phosphor
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Application number
JP2004340250A
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Japanese (ja)
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JP2006153475A (en
JP4475106B2 (en
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Priority to JP2004340250A priority Critical patent/JP4475106B2/en
Priority claimed from JP2004340250A external-priority patent/JP4475106B2/en
Publication of JP2006153475A publication Critical patent/JP2006153475A/en
Publication of JP2006153475A5 publication Critical patent/JP2006153475A5/ja
Application granted granted Critical
Publication of JP4475106B2 publication Critical patent/JP4475106B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

(請求項1)
支持体上に輝尽性蛍光体層を有する放射線画像変換パネルにおいて、少なくとも1層の該輝尽性蛍光体層が気相法(気相堆積法ともいう)により50μm〜20mmの膜厚を有するように形成され、該蛍光体層上にポリウレア保護膜が蒸着プロセスで形成されており、該蛍光体層上保護膜の屈折率が1.2〜2.0であることを特徴とする放射線画像変換パネル。
(Claim 1)
In a radiation image conversion panel having a photostimulable phosphor layer on a support, at least one photostimulable phosphor layer has a thickness of 50 μm to 20 mm by a vapor phase method (also referred to as a vapor deposition method). The polyurea protective film is formed on the phosphor layer by a vapor deposition process, and the refractive index of the phosphor layer protective film is 1.2 to 2.0. Conversion panel.

(請求項4)
支持体上に輝尽性蛍光体層を有する放射線画像変換パネルの製造方法おいて、少なくとも1層の輝尽性蛍光体層が気相法により50μm〜20mmの膜厚を有するように形成され、該蛍光体層上に屈折率が1.2〜2.0である保護膜が蒸着プロセスで形成されており、更に、該保護膜を形成後、プレート加熱処理して保護膜表面をレベリング調整することを特徴とする放射線画像変換パネルの製造方法。
(Claim 4)
In the method for producing a radiation image conversion panel having a photostimulable phosphor layer on a support, at least one photostimulable phosphor layer is formed to have a film thickness of 50 μm to 20 mm by a vapor phase method, A protective film having a refractive index of 1.2 to 2.0 is formed on the phosphor layer by an evaporation process. Further, after forming the protective film, the surface of the protective film is adjusted by heating the plate. A method of manufacturing a radiation image conversion panel.

Claims (4)

支持体上に輝尽性蛍光体層を有する放射線画像変換パネルにおいて、少なくとも1層の該輝尽性蛍光体層が気相法(気相堆積法ともいう)により50μm〜20mmの膜厚を有するように形成され、該蛍光体層上にポリウレア保護膜が蒸着プロセスで形成されており、該蛍光体層上保護膜の屈折率が1.2〜2.0であることを特徴とする放射線画像変換パネル。 In a radiation image conversion panel having a photostimulable phosphor layer on a support, at least one photostimulable phosphor layer has a thickness of 50 μm to 20 mm by a vapor phase method (also referred to as a vapor deposition method). The polyurea protective film is formed on the phosphor layer by a vapor deposition process, and the refractive index of the phosphor layer protective film is 1.2 to 2.0. Conversion panel. 前記輝尽性蛍光体が下記一般式(1)で表される化合物であることを特徴とする請求項1に記載の放射線画像変換パネル。
一般式(1)
1X・aM2X′2・bM3X″3:eA
〔式中、M1はLi、Na、K、Rb及びCsから選ばれる少なくとも1種のアルカリ金属原子であり、M2はM1以外のLi、Na、K、Rb及びCsから選ばれる少なくとも1種のアルカリ金属原子であり、M3はY、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb及びLuから選ばれる少なくとも一種の三価金属原子であり、X、X′およびX″はF、Cl、Br及びIから選ばれる少なくとも1種のハロゲン原子であり、Aは、Eu、Tb、In、Cs、Ce、Tm、Dy、Pr、Ho、Nd、Yb、Er、Gd、Lu、Sm、Y、からなる群から選ばれる少なくとも1種の希土類元素であり、また、a、b、eはそれぞれ0≦a<0.5、0≦b<0.5、0<e≦0.2の範囲の数値を表す。〕
The radiation image conversion panel according to claim 1, wherein the photostimulable phosphor is a compound represented by the following general formula (1).
General formula (1)
M 1 X · aM 2 X ′ 2 · bM 3 X ″ 3 : eA
Wherein, M 1 is at least one alkali metal atom selected Li, Na, K, from Rb and Cs, of at least 1 M 2 is selected Li other than M 1, Na, K, from Rb and Cs M 3 is at least one trivalent selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu X, X 'and X "are at least one halogen atom selected from F, Cl, Br and I, and A is Eu, Tb, In, Cs, Ce, Tm, Dy, Pr , Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, and at least one rare earth element selected from the group consisting of a, b, and e, where 0 ≦ a <0.5, 0 ≦ b <0.5, 0 <e ≦ 0.2 It is.]
前記保護膜の屈折率が1.5〜1.7である保護膜が形成されており、該保護膜の厚さが1〜20μmであることを特徴とする請求項1又は2に記載の放射線画像変換パネル。 The radiation according to claim 1 or 2, wherein a protective film having a refractive index of 1.5 to 1.7 is formed, and the thickness of the protective film is 1 to 20 µm. Image conversion panel. 支持体上に輝尽性蛍光体層を有する放射線画像変換パネルの製造方法おいて、少なくとも1層の輝尽性蛍光体層が気相法により50μm〜20mmの膜厚を有するように形成され、該蛍光体層上に屈折率が1.2〜2.0である保護膜が蒸着プロセスで形成されており、更に、該保護膜を形成後、プレート加熱処理して保護膜表面をレベリング調整することを特徴とする放射線画像変換パネルの製造方法。 In the method for producing a radiation image conversion panel having a photostimulable phosphor layer on a support, at least one photostimulable phosphor layer is formed to have a film thickness of 50 μm to 20 mm by a vapor phase method, A protective film having a refractive index of 1.2 to 2.0 is formed on the phosphor layer by an evaporation process. Further, after forming the protective film, the surface of the protective film is adjusted by heating the plate. A method of manufacturing a radiation image conversion panel.
JP2004340250A 2004-11-25 2004-11-25 Radiation image conversion panel and method for manufacturing radiation image conversion panel Expired - Fee Related JP4475106B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004340250A JP4475106B2 (en) 2004-11-25 2004-11-25 Radiation image conversion panel and method for manufacturing radiation image conversion panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004340250A JP4475106B2 (en) 2004-11-25 2004-11-25 Radiation image conversion panel and method for manufacturing radiation image conversion panel

Publications (3)

Publication Number Publication Date
JP2006153475A JP2006153475A (en) 2006-06-15
JP2006153475A5 true JP2006153475A5 (en) 2007-12-20
JP4475106B2 JP4475106B2 (en) 2010-06-09

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JP2004340250A Expired - Fee Related JP4475106B2 (en) 2004-11-25 2004-11-25 Radiation image conversion panel and method for manufacturing radiation image conversion panel

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5195424B2 (en) * 2006-06-28 2013-05-08 コニカミノルタエムジー株式会社 Scintillator panel
JP5136661B2 (en) * 2011-02-18 2013-02-06 コニカミノルタエムジー株式会社 Radiation image detector

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