JP2006013241A - Semiconductor device and package therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for semiconductor device that is suppressed in the warping of a metallic plate, and also to provide a semiconductor device that is reduced in the stress applied to a semiconductor element and improved in heat radiating property and reliability. <P>SOLUTION: The package for semiconductor device is provided with the metallic plate 101 having a placing section 106 to which the semiconductor element is fixed on one main surface, a resin-containing molded body 102 which is fixed to one main surface of the metallic plate 101 and has an opening 109 formed through the molded body 102 in the thickness direction at the position corresponding to the placing section 106, and a wiring pattern 103 provided on the surface of the molded body 102 on the side opposite to the metallic plate 101. The package is also provided with lead terminals 104 electrically connected to the wiring pattern 103, and a resin-containing cap 105 which is joined to the resin-containing molded body 102 so as to cover the opening 109. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a package for a semiconductor device and a semiconductor device.

  High-power semiconductor device packages used in high-frequency bands, especially for semiconductor device packages used for power amplification in transmitters such as mobile phone relay base stations and communication satellites, have high heat dissipation characteristics and high reliability It is demanded to have sex.

  FIG. 8 is a perspective view of a conventional semiconductor device package (see, for example, Patent Document 1). As shown in FIG. 8, the conventional package for a semiconductor device includes a metal plate 401 having a mounting portion 406 for fixing a semiconductor element such as a transistor on one main surface, and the periphery of the mounting portion 406. A wall 402 is formed. The metal plate 401 is made of copper, a copper-tungsten alloy, or the like, and the wall 402 is made of an Fe—Ni—Co alloy or ceramics. The lead terminal 403 is fixed to the wall 402 while being sandwiched between the ceramic portion 404 a and the ceramic portion 404 b, and is insulated from the wall 402. Since the lead terminal 403 is electrically connected to the metallized layer 405 formed on the surface of the ceramic portion 404 a, the lead terminal 403 can guide the high-frequency signal component into and out of the wall 402.

  Further, a lid 407 is joined to the upper surface of the wall 402 so that the semiconductor element can be protected from moisture, and airtightness of a space surrounded by the wall 402, the lid 407, and the metal plate 401 is ensured. ing. The lid body 407 is made of metal or ceramics.

Such a package for a semiconductor device is mounted on a heat sink with the metal plate 401 side facing the heat sink, but it is necessary to efficiently dissipate heat generated in the semiconductor element disposed in the space. 401 warp needs to be as small as possible.
Japanese Patent Laid-Open No. 2001-53182

  However, in the conventional package for a semiconductor device, it is necessary to join metal and ceramic or metal and metal in the manufacturing process. For example, silver brazing (melting point: Brazing material such as about 780 ° C. is used. Therefore, in the high temperature process using the brazing material, in order to control the warp of the metal plate 401 caused by the difference between the thermal expansion coefficient of the metal plate 401 and the thermal expansion coefficient of the wall 402, a temperature profile at the time of furnace passing, etc. It was necessary to have very advanced technical know-how.

  Further, after the semiconductor element is fixed to the mounting portion 406, the lid 407 made of metal or ceramic is bonded to the wall 402 using a gold-tin alloy (melting point: about 280 ° C.) or the like. When the thermal expansion coefficient of 407 and the thermal expansion coefficient of the wall 402 are different, stress is generated in the metal plate 401 when the lid 407 and the wall 402 are bonded, and the metal plate 401 is greatly warped. As a result, the heat dissipation characteristic of the semiconductor device in which the semiconductor element is fixed to the mounting portion 406 is deteriorated, and excessive stress is applied to the semiconductor element arranged in the package, which decreases the reliability of the semiconductor device. There were drawbacks.

  A first object of the present invention is to provide a package for a semiconductor device in which warpage of a metal plate is suppressed.

  A second object of the present invention is to provide a highly reliable semiconductor device in which stress applied to a semiconductor element is reduced, heat dissipation is excellent, and reliability is high.

  A package for a semiconductor device according to the present invention includes a metal plate including a mounting portion on which a semiconductor element is fixed on one main surface, and a position corresponding to the mounting portion fixed to the one main surface of the metal plate. A resin-containing molded body having an opening penetrating in the thickness direction, a wiring pattern provided on the opposite surface of the surface of the resin-containing molded body on the metal plate side, and a lead terminal electrically connected to the wiring pattern; And a resin-containing lid joined to the resin-containing molded body so as to cover the opening.

  The semiconductor device of the present invention is characterized in that a semiconductor element is fixed to the mounting portion of the semiconductor device package of the present invention, and the semiconductor element and the wiring pattern are electrically connected via a bonding wire. .

  Another semiconductor device of the present invention includes a metal plate including a mounting portion on which a semiconductor element is fixed to one main surface, and a position corresponding to the mounting portion fixed to the one main surface of the metal plate. A resin-containing molded body having an opening penetrating in the thickness direction, a semiconductor element fixed to the mounting portion, and a wiring pattern provided on a surface opposite to the surface of the resin-containing molded body on the metal plate side And a lead terminal electrically connected to the wiring pattern, a bonding wire for electrically connecting the semiconductor element and the wiring pattern, and a sealing resin portion for sealing at least the semiconductor element.

  In the present invention, since a resin-containing molded body is used, a bonding material having a melting point lower than that of silver brazing having a melting point of about 780 ° C. can be used for bonding the metal plate and the resin-containing molded body. Furthermore, after the semiconductor element is fixed to the mounting portion, for example, the semiconductor element can be protected from moisture without using a gold-tin alloy having a melting point of about 280 ° C. Therefore, according to the present invention, it is possible to provide a package for a semiconductor device in which the stress applied to the metal plate by heat is reduced before and after fixing the semiconductor element to the mounting portion, and the warpage of the metal plate is suppressed. Further, by suppressing the warpage of the metal plate, the stress applied to the semiconductor element is reduced, and a semiconductor device with excellent heat dissipation and high reliability can be provided.

  Hereinafter, an example of a package for a semiconductor device of the present invention and an example of a semiconductor device using the same will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is an exploded perspective view showing an example of a package for a semiconductor device of the present invention, and FIG. 2 is a cross-sectional view of the package for a semiconductor device shown in FIG.

  As shown in FIG. 1, in the package for a semiconductor device of this embodiment, a metal plate 101 including a mounting portion 106 on which a semiconductor element is fixed on one main surface, and fixed on one main surface of the metal plate 101. The resin-containing molded body 102 and the wiring pattern 103 provided on the opposite surface of the surface of the resin-containing molded body 102 on the metal plate 101 side are included. The resin-containing molded body 102 has an opening 109 that penetrates in the thickness direction at a position corresponding to the placement portion 106. A lead terminal 104 for inputting / outputting signals is electrically connected to the wiring pattern 103. In the example shown in FIG. 1, the package for a semiconductor device includes two lead terminals 104, and the two lead terminals 104 are arranged symmetrically with respect to the center of the metal plate 101.

  A resin-containing lid 105 is bonded to the resin-containing molded body 102 so as to cover the opening 106, and the semiconductor device package of the present embodiment has a structure that prevents gas from passing through the opening 106. The semiconductor element fixed to the mounting portion 106 is protected from moisture.

  As shown in FIG. 2, the resin-containing lid 105 preferably has a hollow structure. When the resin-containing lid 105 has a hollow structure, the resin-containing molded body 102 and the resin-containing lid 105 are joined to each other not only in the opening 109 but also in the upper side of the resin-containing molded body 102 in FIG. Space is also secured. Therefore, bending of the bonding wire 111 that electrically connects the semiconductor element 110 and the wiring pattern 103 arranged on the mounting portion 106 is prevented.

  In addition, it is preferable that the package for a semiconductor device of this embodiment includes a metal lid 107. The metal lid 107 is fixed to one main surface of the metal plate 101 so as to cover the resin-containing molded body 102 from the resin-containing lid 105 side, and is electrically connected to the metal plate 101. Therefore, unnecessary oscillation of the semiconductor element is suppressed and the operation of the semiconductor element is stabilized, and unnecessary radiation of electromagnetic waves is suppressed.

  The metal lid 107 includes, for example, a main body 107a having a hollow structure, and a flange 107b connected to each of a pair of walls facing each other among a plurality of walls constituting the main body 107a. Yes. The main body 107 a is formed with a notch 107 c so that the lead wire 104 can be pulled out of the metal lid 107 with the metal lid 107 placed on the metal plate 101. Each flange 107b has a substantially recessed portion 107d, and the position of the substantially recessed portion 107d corresponds to the substantially recessed portion 108 formed in the metal plate 101.

  The method for fixing the metal lid 107 to the metal plate 101 is not particularly limited as long as the metal lid 107 and the metal plate 101 are electrically connected. As shown in FIG. There is a method of fixing the metal lid 107 and the metal plate 101 to a heat sink or the like with screws or the like in a state where the metal lid 107 and the metal plate 101 are overlapped so that the substantially concave portion 108 of the metal plate 101 is coincident. In this case, when the metal lid 107 and the metal plate 101 are fixed to the heat sink, the metal lid 107 is fixed to the metal plate 101. Other methods for fixing the metal lid 107 to the metal plate 101 include fitting, screwing, bonding with solder, or the like.

  The solder may be either a lead-containing solder or a lead-free solder. Examples of the composition of lead-containing solder include Pb-Sn, Pb-Sn-Sb, and Pb-Ag. Examples of the composition of lead-free solder include Bi-Sn, Bi-Sn-Sb, and the like.

  For example, the material of the metal plate 101 preferably contains copper or a copper alloy having high thermal conductivity. An example of the copper alloy is a copper-tungsten alloy. Further, the metal plate 101 may be a composite material of a three-layer structure (for example, copper / molybdenum / copper).

  Although there is no restriction | limiting in particular as a material of the resin containing molded object 102, For example, the glass-epoxy material which impregnated the epoxy resin to the glass nonwoven fabric or the woven fabric, a polyimide, paper phenol, etc. are mentioned. In particular, the resin-containing molded body 102 preferably includes an epoxy resin.

  Examples of the material of the wiring pattern 103 include Cu. The wiring pattern 103 may be formed in an appropriate pattern according to the frequency band and modulation method in which the semiconductor device using the semiconductor device package of this embodiment is used.

  The structure 113 including the resin-containing molded body 102 and the wiring pattern 103 is, for example, a printed board. The wiring pattern 103 may be provided not only on the surface opposite to the surface on the metal plate 102 side of the resin-containing molded body 102 but also on the surface on the metal plate 101 side of the resin-containing molded body 102.

  The bonding material used for fixing the resin-containing molded body 102 to the metal plate 101 is not particularly limited. For example, a gold-tin alloy, solder, a conductive paste in which metal powder is dispersed in a binder resin, or an epoxy Resin adhesives are preferred. The epoxy resin adhesive may be either a one-component type or a two-component type. For gold-tin alloy, about 280 degrees, for lead-containing solder, about 180 ° C, for lead-free solder, about 230 degrees, for the above conductive paste, about 150 degrees, resin-containing molding The body 102 and the metal plate 101 can be joined. With an epoxy resin adhesive, the resin-containing molded body 102 and the metal plate 101 can be bonded to each other at about 150 degrees for the one-pack type and at room temperature for the two-pack type. Examples of the metal powder contained in the conductive paste include silver powder, and examples of the binder resin include thermosetting resins such as epoxy resins. However, when the wiring pattern 103 is also provided on the surface of the resin-containing molded body 102 on the metal plate 101 side, it is preferable to use gold-tin alloy, solder, or the conductive paste as the bonding material. This is because the semiconductor element can be grounded to the metal plate 101.

  As a material of the lead terminal 104, for example, Cu, Fe—Ni—Co alloy or the like is preferable.

  As a bonding material used for bonding the lead terminal 104 and the wiring pattern 103, for example, solder is preferable from the viewpoints of conductivity, fixing strength, and cost.

  The material of the resin-containing lid 105 is not particularly limited, but preferably contains, for example, an epoxy resin or a silicon resin.

  The bonding material used for bonding the resin-containing lid 105 and the resin-containing molded body 102 is not particularly limited as long as it has high adhesive strength and can maintain moisture resistance in the opening. For example, an epoxy resin adhesive Etc. are used.

  The material of the metal lid is not particularly limited, but the same material as the metal plate 101, or silver can be used.

  As described above, since the resin-containing molded body 102 is used in the semiconductor device package of the present embodiment, the melting point of the metal plate 101 and the resin-containing molded body 102 is higher than that of silver solder having a melting point of about 780 ° C. Can be used. Furthermore, since the resin-containing lid 105 is used, a bonding material having a melting point lower than that of the gold-tin alloy (melting point: about 280 ° C.) can be used for joining the resin-containing molded body 102 and the resin-containing lid 105. Conventionally, the semiconductor element can be protected from moisture without using the gold-tin alloy that has been used as a bonding material after the semiconductor element is fixed to the mounting portion 106. Therefore, before and after fixing the semiconductor element to the mounting portion, the stress applied to the metal plate by heat is reduced, and the warpage of the metal plate is suppressed. Therefore, it is possible to provide a package for a semiconductor device that can reduce the stress applied to the semiconductor element, can provide a highly reliable semiconductor device with excellent heat dissipation.

  A conventional package for a semiconductor device using ceramics requires a great deal of cost since firing takes a long time in the manufacturing process. Moreover, the material cost of ceramics and metals is higher than, for example, a resin such as an epoxy resin. Therefore, the cost for the semiconductor device package of the present embodiment can be greatly reduced as compared with the conventional semiconductor device package.

(Embodiment 2)
FIG. 3 is an exploded perspective view showing an example of the semiconductor device of the present invention. The semiconductor device shown in FIG. 3 uses the semiconductor device package shown in FIGS. 3, the same components as those of the semiconductor device package shown in FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 3, in the semiconductor device of this embodiment, the semiconductor element 110 is fixed to the mounting portion 106 of the metal plate 101 of the semiconductor device package, and the semiconductor element 110 and the wiring pattern 103 are, for example, Au, Electrical connection is made via a bonding wire 110 containing Al or the like. Signals are input / output to / from the semiconductor device by lead terminals 104 electrically connected to the wiring pattern 103.

  Examples of the semiconductor element 110 include a GaAs, Si, GaN, or SiC transistor.

  As the bonding material used for fixing the semiconductor element 110 to the mounting portion 106, for example, the same bonding material used for fixing the resin-containing molded body 102 and the metal plate 101 can be used.

  In the semiconductor device of this embodiment, since the package for a semiconductor device of Embodiment 1 is used, warpage of the metal plate is suppressed, stress applied to the semiconductor element is reduced, heat dissipation is excellent, and reliability is high.

  In addition, since the semiconductor device package according to the first embodiment is used in the semiconductor device according to the present embodiment, the cost can be significantly reduced as compared with the conventional semiconductor device.

(Embodiment 3)
FIG. 4 is an exploded perspective view showing another example of the semiconductor device of the present invention. The semiconductor device shown in FIG. 4 uses the semiconductor device package shown in FIG. 4, the same components as those in the semiconductor device package shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted.

The semiconductor device of this embodiment has the same structure as that of the semiconductor device of Embodiment 2 except that it further includes a circuit board 112 that is disposed on the mounting portion 109 and includes a matching circuit. ing. For example, the circuit board 112 is disposed between the semiconductor element 110 and the wiring constituting the wiring pattern 103, and the semiconductor element 110 and the circuit board 112, and the circuit board 112 and the wiring pattern 103 are electrically connected by the bonding wires 11. It is connected. The circuit board 112 has a structure in which a metal pattern is formed on one main surface of an insulating substrate made of ceramic or the like, and the relative dielectric constant ε _r is, for example, 5 or more. The circuit board 112 may include a metal pattern on the surface facing the metal plate 201.

  The bonding material used for fixing the circuit board 112 to the metal plate 101 is not particularly limited. For example, the same bonding material used for fixing the resin-containing molded body 102 and the metal plate 101 may be used. it can. When the circuit board 112 is also provided with a metal pattern on the surface on the metal plate 101 side, it is preferable to use gold-tin alloy, solder, or conductive paste as the bonding material. This is because the circuit board 112 can be grounded to the metal plate 101.

  Since the semiconductor device according to the present embodiment includes the circuit board 112 including the matching circuit, for example, the high frequency characteristics are improved as compared with the semiconductor device according to the second embodiment.

(Embodiment 4)
5 is an exploded perspective view showing another example of the semiconductor device of the present invention, and FIG. 6 is a cross-sectional view of the semiconductor device shown in FIG.

  As shown in FIG. 5, in the semiconductor device of the present embodiment, the metal plate 201 including the mounting portion 206 to which the semiconductor element 210 is fixed on one main surface, the semiconductor element 210 fixed to the mounting portion 206, and The resin-containing molded body 202 fixed to one main surface of the metal plate 201 and the wiring pattern 203 provided on the opposite surface of the surface of the resin-containing molded body 202 on the metal plate 101 side are included. The resin-containing molded body 202 has an opening 209 that penetrates in the thickness direction at a position corresponding to the placement portion 206. A lead terminal 204 for inputting / outputting signals is electrically connected to the wiring pattern 203. For example, the semiconductor element 210 is accommodated in the opening 209 and is electrically connected to the wiring pattern 203 via the bonding wire 211. The semiconductor element 210 and the bonding wire 211 are resin-sealed by a sealing resin portion 214.

  The semiconductor device of the present embodiment is preferably provided with a metal lid 207. The metal lid 207 is fixed to one main surface of the metal plate 201 so as to cover the resin-containing molded body 202 from the sealing resin portion 214 side, and is electrically connected to the metal plate 201. Therefore, unnecessary oscillation with respect to the semiconductor element 210 is suppressed and the operation of the semiconductor element 210 is stabilized, and unnecessary radiation of electromagnetic waves is suppressed.

  As the materials for the metal plate 201, the resin-containing molded body 202, the wiring pattern 203, the lead terminal 204, and the metal lid 207, the same materials as those for the semiconductor device package of the first embodiment can be used. The metal lid 207 has the same structure as the metal lid of the semiconductor device package of the first embodiment. The structure 213 including the resin-containing molded body 202 and the wiring pattern 203 is, for example, a printed board. As the semiconductor element 210 and the bonding wire 211, the same semiconductor device as that of the second embodiment can be used.

  As the bonding material used for fixing the resin-containing molded body 202 to the metal plate 201, the same material as that of the semiconductor device of the second embodiment can be used.

  The resin contained in the sealing resin portion 214 is not particularly limited, and for example, a thermosetting resin can be used. Among thermosetting resins, epoxy resins having excellent properties such as crack resistance are preferred. The sealing resin portion 214 can be formed by, for example, potting for dropping or injecting a low-viscosity or liquid resin.

  In the semiconductor device of this embodiment, since the resin-containing molded body 202 is used, a bonding material having a melting point lower than that of silver brazing or the like can be used for bonding the metal plate 201 and the resin-containing molded body 202. Furthermore, since the semiconductor element 210 is sealed by the sealing resin portion 214, after the semiconductor element 210 is fixed to the mounting portion 206, a gold-melting point having a high melting point of about 280, which has been conventionally used as a bonding material. Even without using a tin alloy, the semiconductor element 210 can be protected from moisture. Therefore, before and after fixing the semiconductor element to the mounting portion, the stress applied to the metal plate by heat is reduced, and the warpage of the metal plate is suppressed. Therefore, in the semiconductor device of this embodiment, the stress applied to the semiconductor element is reduced, heat dissipation is excellent, and reliability is high.

  In the semiconductor device shown in FIGS. 5 and 6, the sealing resin portion 214 seals not only the semiconductor element 210 but also the bonding wire 211, and the sealing resin portion 214 is formed in the opening 209. However, the present invention is not limited to this. As long as at least the semiconductor element 210 is sealed by the sealing resin portion 214, for example, a part of the bonding wire 211 may protrude from the sealing resin portion 214, and the opening 209 may be formed in the sealing resin portion 214. It may not be blocked by resin.

(Embodiment 5)
FIG. 7 is an exploded perspective view showing another example of the semiconductor device of the present invention. The semiconductor device shown in FIG. 7 has the same structure as that of the semiconductor device of Embodiment 4 except that it further includes a circuit board 212 that is arranged on the mounting portion 209 and includes a matching circuit. is doing. In FIG. 7, the same components as those for the semiconductor device shown in FIGS. 5 and 6 are denoted by the same reference numerals, and the description thereof is omitted.

  For example, the circuit board 212 is disposed between the semiconductor element 210 and the wiring constituting the wiring pattern 203, and the semiconductor element 210 and the circuit board 212, and the circuit board 212 and the wiring pattern 203 are electrically connected by bonding wires 211. It is connected.

  The circuit board 212 is the same as the circuit board used in the semiconductor device of the third embodiment, and the bonding material used for fixing the circuit board 112 to the metal plate 101 is also the case of the semiconductor device of the third embodiment. The same material can be used.

  Since the semiconductor device of the present embodiment includes the circuit board 212 including the matching circuit, for example, the high frequency characteristics are improved as compared with the semiconductor device of the fourth embodiment.

  The present invention can provide a semiconductor device package in which warpage of a metal plate is suppressed, stress applied to a semiconductor element can be reduced, and a semiconductor device having excellent heat dissipation and high reliability can be provided. Packages and semiconductor devices are useful.

The disassembled perspective view which shows an example of the package for semiconductor devices of this invention Sectional view of the semiconductor device package shown in FIG. The disassembled perspective view which shows an example of the semiconductor device of this invention The disassembled perspective view which shows the other example of the semiconductor device of this invention The disassembled perspective view which shows the other example of the semiconductor device of this invention Sectional view of the semiconductor device shown in FIG. The disassembled perspective view which shows the other example of the semiconductor device of this invention An exploded perspective view showing an example of a conventional semiconductor device

Explanation of symbols

101, 201 Metal plate 102, 202 Resin-containing molded body 103, 203 Wiring pattern 104, 204 Lead terminal 105 Resin-containing lid 106, 206 Placement portion 107, 207 Metal lid 108 Substantially concave portion 109, 209 Opening portion 110, 210 Semiconductor element 111, 211 Bonding wire 112, 212 Circuit board including matching circuit 214 Sealing resin part

Claims (14)

A metal plate including a mounting portion on which a semiconductor element is fixed on one main surface;
A resin-containing molded body that is fixed to the one main surface of the metal plate and has an opening that penetrates in the thickness direction at a position corresponding to the placement portion;
A wiring pattern provided on a surface opposite to the surface of the metal-containing side of the resin-containing molded body;
A lead terminal electrically connected to the wiring pattern;
A package for a semiconductor device, comprising: a resin-containing lid joined to the resin-containing molded body so as to cover the opening.   The package for a semiconductor device according to claim 1, further comprising a metal lid, wherein the metal lid is fixed to the metal plate so as to cover the resin-containing molded body and is electrically connected to the metal plate.   The said metal plate and the said resin containing molded object were joined through the electrically conductive paste or the epoxy resin adhesive which the gold- tin alloy, the solder, and the metal powder were disperse | distributed to resin. Package for semiconductor devices.   The package for a semiconductor device according to claim 1, wherein the metal plate includes copper or a copper alloy.   The package for a semiconductor device according to any one of claims 1 to 4, wherein the resin-containing molded body includes an epoxy resin.   The package for a semiconductor device according to any one of claims 1 to 5, wherein the structure including the resin-containing molded body and the wiring pattern is a printed circuit board.   The package for a semiconductor device according to claim 1, wherein the lead terminal is made of Cu or an Fe—Ni—Co alloy.   The package for a semiconductor device according to claim 1, wherein the resin-containing lid includes an epoxy resin or a silicon resin.   A semiconductor device, wherein a semiconductor element is fixed to the mounting portion of the package for a semiconductor device according to claim 1, and the semiconductor element and the wiring pattern are electrically connected via a bonding wire. The circuit board further includes a circuit board that is disposed in the mounting portion and includes a matching circuit,
The semiconductor device according to claim 9, wherein the semiconductor element and the circuit board, and the circuit board and the wiring pattern are electrically connected via the bonding wires, respectively.   The semiconductor device according to claim 9, wherein the semiconductor element is a GaAs, Si, GaN, or SiC transistor. A metal plate including a mounting portion on which a semiconductor element is fixed on one main surface;
A resin-containing molded body that is fixed to the one main surface of the metal plate and has an opening that penetrates in the thickness direction at a position corresponding to the placement portion;
A semiconductor element fixed to the mounting portion;
A wiring pattern provided on a surface opposite to the surface of the metal-containing side of the resin-containing molded body;
A lead terminal electrically connected to the wiring pattern;
A bonding wire for electrically connecting the semiconductor element and the wiring pattern;
A semiconductor device comprising at least a sealing resin portion for sealing the semiconductor element.   The semiconductor device according to claim 12, wherein the bonding wire is sealed in the resin sealing portion.   The semiconductor device according to claim 12, further comprising a metal lid, wherein the metal lid is fixed to the metal plate so as to cover the resin-containing molded body and is electrically connected to the metal plate.

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