JP2006062148A - Silicone structure manufacturing method, mold manufacturing method, silicone structure, ink jet recording head, image forming apparatus and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicon structure manufacturing method capable of forming a fine structure with high precision, a mold manufacturing method, a silicone structure, an ink jet recording head, an image forming apparatus and a semiconductor device. <P>SOLUTION: Trench etching is applied to a silicon substrate having a patterned oxide film 114 formed thereon to form a groove 118 demarcated by a wall part 122. Further, the oxide film 114 is removed. Furthermore, a burr 121 formed to an upper part of the wall part 122 is removed by applying dry etching to the entire surface of the wall part. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a silicon structure manufacturing method, a mold manufacturing method, a silicon structure, an ink jet recording head, an image forming apparatus, and a semiconductor device that form fine protrusions by performing trench etching on a silicon substrate.

  Silicon structures are used in various applications, mainly in the field of MEMS. Among them, representative examples include the manufacture of semiconductor devices, the production of ink jet recording head flow paths and nozzles by etching, and the production of master substrates in imprint (molding) technology.

  In these productions, in order to manufacture silicon structures having various three-dimensional structures that are increasingly miniaturized, further advancement in the processing technology of silicon members has been required.

  As this processing technique, there is a cycle etching (Bosch process) as one technique of silicon trench etching which has become mainstream in recent years (see, for example, Patent Documents 1 and 2).

  However, in this cycle etching, the required fine structure cannot be formed with high accuracy. For example, when a mold mold is manufactured using this silicon structure, a good mold mold cannot be manufactured. There was a problem that the formed member was easily chipped. This problem is particularly noticeable in the nano-imprinting technique in which a mold is pressed against a workpiece such as a polymer.

  In recent years, as the design rule of semiconductor devices such as LSIs has been reduced from half micron to sub-quarter micron level, element isolation is shifting from conventional LOCOS (Local oxidation of silicon) to trench isolation. . Also, a trench capacitor is being adopted for a storage capacitor in a DRAM. These use trenches (grooves) formed in a semiconductor substrate such as silicon, and have a three-dimensional structure in which a dielectric material or electrode material is embedded therein, while ensuring element isolation and capacitor capacity. It is possible to reduce the area occupied by the semiconductor element. Thus, the formation of the trench and the control of the shape have become very important, and the solution of the above problem has been urgently required.

The above problem is not limited to the nano-imprinting technique, and has occurred in general fine processing as well.
JP-A-8-53780 JP-A-6-21029

  Therefore, in view of such problems, the present invention provides a silicon structure manufacturing method, a mold manufacturing method, a silicon structure, an inkjet recording head, an image forming apparatus, and an image forming apparatus capable of forming a fine structure with high accuracy. An object is to obtain a semiconductor device.

  When the present inventor manufactures a master substrate using the nano-imprinting technology and manufactures a mold mold using the master substrate, when the mold is molded with the mold mold, the tip peripheral portion of the convex portion of the molded member is not chipped. We focused on the fact that it often occurs. Then, the present inventor has examined what causes the chipping and has found the following.

In order to manufacture a master substrate, as shown in FIG. 22, first, an oxide film (SiO ₂ film) 274 is formed on the surface side of a flat silicon substrate 272, and an opening 276 having a predetermined dimension is formed in this oxide film 274. (See FIG. 22A). In FIG. 22, the deposition time (for example, 5 seconds) is indicated by oblique lines and the etching time (for example, 6 seconds) is outlined on the right side of the cross-sectional view.

  Next, isotropic etching and coating of the deposition film 282 are sequentially repeated from the upper side of the substrate (see FIGS. 22A to 22F). As a result, anisotropic etching in the substrate depth direction is performed, and a groove 278 having a predetermined depth corresponding to the pressure chamber is formed (see FIG. 22G). The substrate on which the groove 278 is formed is referred to as a master substrate 292 (see FIG. 23A).

  Here, at the initial stage of etching, that is, at a stage where the groove 278 is shallow, a deposition film cannot be sufficiently formed on the side wall, so that the side wall of the groove 278 is easily etched. For this reason, a burr 290 is formed at the opening edge.

  As shown in FIG. 23, when the mold 296 is manufactured using the master substrate 292, the burr 290 forms a constricted portion 299 at the base of the convex portion 298 of the mold 296 (FIG. 23). (See (B) and (C)). For this reason, the front-end | tip peripheral part 311 of the convex part 308 of the shaping | molding member 304 shape | molded using the mold die 296 is hard to remove | deviate from the narrow part 299 (refer FIG.23 (D)). Therefore, the tip peripheral edge 311 is missing (see FIG. 23E).

  Furthermore, the inventor also paid attention to the fact that when a trench capacitor (thin capacitor) is manufactured by the nano-imprinting technique, voids are easily generated in the trench (groove). And this inventor examined the cause which a void tends to produce and found the following things.

  To manufacture the trench capacitor, first, as shown in FIG. 24A, etching is performed on the silicon substrate 322 on which the silicon film 324 and the oxide film 326 having a predetermined pattern are formed, and the silicon film 324 and the oxide film are oxidized. A trench (groove) 328 is formed between the film 326 and the film 326.

  A burr 330 is formed at the edge of the opening 332 of the trench 328. Therefore, when the trench 328 is embedded by forming a film from the substrate surface side by a CVD method or the like, the coverage is poor and a void 336 is easily generated (see FIG. 24B).

  Therefore, the present inventor diligently studied to remove these causes and completed the present invention.

  In order to achieve the above object, the invention according to claim 1 is a silicon structure in which at least one of a fine convex portion or a concave portion is formed by performing trench etching on a silicon substrate on which a patterned mask is formed. A body manufacturing method is characterized in that a trench forming step for forming a trench by performing cycle etching and a burr removing step for removing a burr formed at an opening edge of the trench are performed.

  In this specification, the term “cycle etching” means that etching and deposition film deposition are repeatedly performed.

  According to the first aspect of the present invention, a mold having at least one of a fine concave portion or a convex portion can be produced in a good shape using the produced silicon structure. Further, when the silicon structure has a fine recess, the deposit can be embedded with good coverage when the deposit is embedded in the recess by film formation or the like. Therefore, trench isolation, trench capacitors, and the like can be formed without causing defects such as voids.

  The invention described in claim 2 is characterized in that, as the burr removing step, the entire surface is etched after the mask is removed.

  Thereby, it is possible to satisfactorily control a fine shape of about several μm. Further, the edge can be slightly rounded.

  The invention described in claim 3 is characterized in that, as the burr removing step, wet etching is performed after the removal of the mask.

  Thereby, sufficient roundness can be given to an edge.

  According to a fourth aspect of the present invention, the etched surface side of the silicon substrate is polished as the burr removing step.

  Thereby, since it is not necessary to remove the mask, the process can be simplified and the manufacturing time can be greatly shortened.

  Invention of Claim 5 manufactures the metal mold | die shape | molded by a nano imprinting technique with the silicon structure manufactured with the silicon structure manufacturing method of any one of Claims 1-4. It is characterized by that.

  Thereby, it is possible to prevent a defective portion such as a constriction from being formed in the mold by the burr.

  When producing a mold, it may be performed by electroforming, injection molding or hot embossing, and the method for producing the mold is not particularly limited.

  In addition, if a release material is applied to the surface of the mold or the transfer side surface of the molded member, the molded member is further easily separated from the mold. Moreover, the same effect can be produced even if a mold release agent is included in the material constituting the molded member.

  A sixth aspect of the present invention is a silicon structure manufactured by the silicon structure manufacturing method according to any one of the first to fourth aspects.

  Thereby, the mold die which has at least one of a fine recessed part or a convex part using this silicon structure can be manufactured in a favorable shape. Further, when the silicon structure has a fine recess, the deposit can be embedded with good coverage when the deposit is embedded in the recess by film formation or the like. Accordingly, it is possible to realize a trench isolation and a trench capacitor that do not cause defects such as voids.

  A seventh aspect of the invention is an ink jet recording head having the silicon structure according to the sixth aspect.

  An ink jet recording head having greatly improved performance can be obtained.

  The invention described in claim 8 is an image forming apparatus having the ink jet recording head described in claim 7.

  Thereby, an image forming apparatus with high performance can be realized.

  The invention described in claim 9 is a semiconductor device having the silicon structure according to claim 6.

  Thereby, a semiconductor device with high performance can be realized.

  Since the present invention has the above-described configuration, a silicon structure manufacturing method, a mold manufacturing method, a silicon structure, an ink jet recording head, an image forming apparatus, and a semiconductor device capable of forming a fine structure with high accuracy are realized. Can be made.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail based on examples shown in the drawings. In the following embodiments, the concept of grooves includes holes. Further, in the figure, when an arrow UP and an arrow LO are shown, it indicates an upward direction and a downward direction, respectively, and when expressed in an up and down direction, it corresponds to each of the arrows. In the second and subsequent embodiments, the same components as those already described are denoted by the same reference numerals and description thereof is omitted.

[First Embodiment]
First, the first embodiment will be described. In the present embodiment, the recording paper P will be described as an example of the recording medium. In addition, the conveyance direction of the recording paper P in the inkjet recording apparatus 10 is represented by an arrow S as a sub-scanning direction, and a direction orthogonal to the conveyance direction is represented by an arrow M as a main scanning direction.

  First, an outline of the inkjet recording apparatus 10 will be described. As shown in FIG. 1, the inkjet recording apparatus 10 includes a carriage 12 on which black, yellow, magenta, and cyan inkjet recording units 30 (inkjet recording heads 32) are mounted. A pair of brackets 14 project from the carriage 12 on the upstream side in the conveyance direction of the recording paper P, and the bracket 14 has a circular opening 14A (see FIG. 2). A shaft 20 installed in the main scanning direction is inserted through the opening 14A.

  Further, a drive pulley (not shown) and a driven pulley (not shown) constituting the main scanning mechanism 16 are disposed at both ends in the main scanning direction, and wound around the driving pulley and the driven pulley, A part of the timing belt 22 that travels in the main scanning direction is fixed to the carriage 12. Therefore, the carriage 12 is supported so as to be reciprocally movable in the main scanning direction.

  Further, the ink jet recording apparatus 10 is provided with a paper feed tray 26 in which the recording paper P before image printing is bundled and placed above the paper feed tray 26 by an ink jet recording head 32. A paper discharge tray 28 for discharging the recording paper P printed with is provided. A sub-scanning mechanism 18 including a transport roller and a discharge roller for transporting the recording paper P fed one by one from the paper feed tray 26 in the sub-scanning direction at a predetermined pitch is provided.

  In addition, the inkjet recording apparatus 10 is provided with a control panel 24 for performing various settings during printing, a maintenance station (not shown), and the like. The maintenance station includes a cap member, a suction pump, a dummy jet receiver, a cleaning mechanism, and the like, and performs maintenance operations such as a suction recovery operation, a dummy jet operation, and a cleaning operation.

  In addition, as shown in FIG. 2, each color ink jet recording unit 30 includes an ink jet recording head 32 and an ink tank 34 that supplies ink to the ink jet recording unit 32. A plurality of nozzles 56 (see FIG. 3) formed on the ink ejection surface 32A are mounted on the carriage 12 so as to face the recording paper P. Accordingly, by selectively ejecting ink droplets from the nozzles 56 to the recording paper P while the ink jet recording head 32 is moved in the main scanning direction by the main scanning mechanism 16, image data is converted into image data for a predetermined band region. A portion of the based image is recorded.

  When one movement in the main scanning direction is completed, the recording paper P is conveyed by a predetermined pitch in the sub scanning direction by the sub scanning mechanism 18, and the ink jet recording head 32 (ink jet recording unit 30) is again moved in the main scanning direction ( A part of the image based on the image data is recorded in the next band area while moving in the opposite direction). By repeating such an operation a plurality of times, the recording paper P The entire image based on the image data is recorded in full color.

  Next, the inkjet recording head 32 in the inkjet recording apparatus 10 configured as described above will be described in detail.

  FIG. 3 is a schematic plan view showing the configuration of the inkjet recording head 32, and FIG. 4 is a schematic cross-sectional view taken along the line XX of FIG. As shown in FIGS. 3 and 4, the ink jet recording head 32 is provided with an ink supply port 36 communicating with the ink tank 34. The ink 110 injected from the ink supply port 36 is supplied to the ink pool chamber. 38 is stored.

  The volume of the ink pool chamber 38 is defined by a top plate 40 and a partition wall 42, and a plurality of ink supply ports 36 are perforated at predetermined locations on the top plate 40. A resin film air damper 44 (photosensitive dry film 96 to be described later) is provided in the ink pool chamber 38 inside the top plate 40 between the ink supply ports 36 in a row. It has been.

  The top plate 40 may be made of any material such as glass, ceramics, silicon, resin, etc., as long as it is an insulator having a strength that can serve as a support for the inkjet recording head 32. Further, the top plate 40 is provided with a metal wiring 90 for energizing a drive IC 60 described later. The metal wiring 90 is covered and protected by a resin film 92 so that erosion by the ink 110 is prevented.

  The partition wall 42 is formed of resin (photosensitive dry film 98 described later), and partitions the ink pool chamber 38 into a rectangular shape. The ink pool chamber 38 is separated vertically from the pressure chamber 50 via a piezoelectric element 46 and a diaphragm 48 that is bent and deformed in the vertical direction by the piezoelectric element 46. That is, the piezoelectric element 46 and the diaphragm 48 are arranged between the ink pool chamber 38 and the pressure chamber 50, and the ink pool chamber 38 and the pressure chamber 50 are configured not to exist on the same horizontal plane. ing.

  Therefore, it is possible to arrange the pressure chambers 50 in a state where they are close to each other, and 56 can be arranged in a matrix at high density. In addition, with such a configuration, an image can be formed in a wide band area by one movement of the carriage 12 in the main scanning direction, so that the scanning time can be shortened. That is, it is possible to realize high-speed printing in which image formation is performed over the entire surface of the recording paper P with a small number of movements and time of the carriage 12.

  The piezoelectric element 46 is bonded to the upper surface of the diaphragm 48 for each pressure chamber 50. The diaphragm 48 is formed of a metal such as SUS, has elasticity in at least the vertical direction, and is configured to bend and deform (displace) in the vertical direction when the piezoelectric element 46 is energized (when a voltage is applied). It has become. The diaphragm 48 may be an insulating material such as glass. A lower electrode 52 having one polarity is disposed on the lower surface of the piezoelectric element 46, and an upper electrode 54 having the other polarity is disposed on the upper surface of the piezoelectric element 46. The driving IC 60 is electrically connected to the upper electrode 54 by a metal wiring 86.

  The piezoelectric element 46 is covered and protected by a low water permeable insulating film (SiOx film) 80. Since the low water-permeable insulating film (SiOx film) 80 that covers and protects the piezoelectric element 46 is deposited under the condition that the moisture permeability is low, moisture penetrates into the piezoelectric element 46 and becomes unreliable. (Deterioration of piezoelectric characteristics caused by reducing oxygen in the PZT film) can be prevented. The diaphragm 48 made of metal (SUS or the like) that contacts the lower electrode 52 functions also as a low resistance GND wiring.

  Further, the upper surface of the low water permeability insulating film (SiOx film) 80 of the piezoelectric element 46 is covered and protected by a resin film 82. Thereby, in the piezoelectric element 46, resistance to erosion by the ink 110 is ensured. Further, the metal wiring 86 is also covered and protected by the resin protective film 88 so that erosion by the ink 110 is prevented.

  The upper portion of the piezoelectric element 46 is covered and protected by the resin film 82 and is not covered by the resin protective film 88. Since the resin film 82 is a flexible resin layer, this configuration prevents the displacement of the piezoelectric element 46 (the diaphragm 48) from being prevented (preferably bendable and deformable in the vertical direction). ). That is, since the resin layer above the piezoelectric element 46 is thinner, the effect of suppressing displacement inhibition is higher, so that the resin protective film 88 is not covered.

  The drive IC 60 is disposed outside the ink pool chamber 38 defined by the partition wall 42 and between the top plate 40 and the vibration plate 48 and is not exposed (does not protrude) from the vibration plate 48 or the top plate 40. It is said that. Therefore, it is possible to reduce the size of the inkjet recording head 32.

  The periphery of the drive IC 60 is sealed with a resin material 58. As shown in FIG. 5, a plurality of injection ports 40B for the resin material 58 for sealing the drive IC 60 are formed in a lattice shape so as to partition each inkjet recording head 32 in the top plate 40 in the manufacturing stage. After bonding (bonding) a piezoelectric element substrate 70 and a flow path substrate 72, which will be described later, the top plate 40 is cut along the injection port 40B sealed (closed) by the resin material 58, thereby forming a matrix. A plurality of inkjet recording heads 32 having the nozzles 56 (see FIG. 3) are manufactured at a time.

  Further, as shown in FIGS. 4 and 6, a plurality of bumps 62 protrude in a matrix shape at a predetermined height on the lower surface of the drive IC 60, and the piezoelectric element 46 is formed on the vibration plate 48. Flip chip mounting is performed on the metal wiring 86 of the element substrate 70. Therefore, high-density connection to the piezoelectric element 46 can be easily realized, and the height of the drive IC 60 can be reduced (thinner can be reduced). This also makes it possible to reduce the size of the inkjet recording head 32.

  In FIG. 3, bumps 64 are provided outside the driving IC 60. The bump 64 connects the metal wiring 90 provided on the top plate 40 and the metal wiring 86 provided on the piezoelectric element substrate 70, and of course, is higher than the height of the drive IC 60 mounted on the piezoelectric element substrate 70. It is provided to be higher.

  Accordingly, the metal wiring 90 of the top plate 40 is energized from the main body side of the ink jet recording apparatus 10, the metal wiring 86 is energized from the metal wiring 90 of the top plate 40 via the bumps 64, and then the drive IC 60 is energized. It is. The drive IC 60 applies a voltage to the piezoelectric element 46 at a predetermined timing, and the diaphragm 48 bends and deforms in the vertical direction, so that the ink 110 filled in the pressure chamber 50 is pressurized, and the nozzle In this configuration, ink droplets are ejected from 56.

  One nozzle 56 for ejecting ink droplets is provided at a predetermined position for each pressure chamber 50. The pressure chamber 50 and the ink pool chamber 38 avoid the piezoelectric element 46, and pass through the through-hole 48A formed in the vibration plate 48, and from the pressure chamber 50 toward the horizontal direction in FIG. The extended ink flow path 68 is connected by communicating. The ink flow path 68 is slightly smaller than the connection portion with the actual ink flow path 66 in advance so that alignment with the ink flow path 66 can be performed at the time of manufacturing the ink jet recording head 32 (so as to ensure communication). It is provided longer.

(Production method)
Next, the manufacturing process of the inkjet recording head 32 configured as described above will be described in detail with reference to FIGS. As shown in FIG. 7, the ink jet recording head 32 is manufactured by separately creating a piezoelectric element substrate 70 and a flow path substrate 72 and bonding (joining) the two together. First, the manufacturing process of the piezoelectric element substrate 70 will be described. The top plate 40 is coupled (bonded) to the piezoelectric element substrate 70 before the flow path substrate 72.

  As shown in FIG. 8A, first, a glass first support substrate 76 having a plurality of through holes 76A is prepared. The first support substrate 76 may be anything as long as it does not bend, and is not limited to glass, but glass is preferable because it is hard and inexpensive. Known methods for producing the first support substrate 76 include femtosecond laser processing of a glass substrate, and exposure / development of a photosensitive glass substrate (for example, PEG3C manufactured by HOYA Corporation).

  Then, as shown in FIG. 8B, an adhesive 78 is applied to the upper surface (front surface) of the first support substrate 76, and as shown in FIG. 8C, the upper surface is made of metal (SUS or the like). The diaphragm 48 is adhered. At this time, the through hole 48A of the diaphragm 48 and the through hole 76A of the first support substrate 76 are not overlapped (not overlapped). Note that an insulating substrate such as glass may be used as the material of the diaphragm 48.

  Here, the through hole 48 </ b> A of the vibration plate 48 is used for forming the ink flow path 66. The reason why the through hole 76A is provided in the first support substrate 76 is that a chemical solution (solvent) is poured into the interface between the first support substrate 76 and the vibration plate 48 in the subsequent process. This is because the first support substrate 76 is peeled off from the diaphragm 48. Furthermore, various materials used during manufacture leak from the lower surface (back surface) of the first support substrate 76 so that the through holes 76A of the first support substrate 76 and the through holes 48A of the diaphragm 48 do not overlap. This is to prevent it from happening.

  Next, as shown in FIG. 8D, the lower electrode 52 laminated on the upper surface of the diaphragm 48 is patterned. Specifically, metal film sputtering (film thickness of 500 to 3000 mm), resist formation by photolithography, patterning (etching), and resist peeling by oxygen plasma. This lower electrode 52 becomes the ground potential. Next, as shown in FIG. 8E, a PZT film, which is the material of the piezoelectric element 46, and the upper electrode 54 are sequentially laminated on the upper surface of the lower electrode 52 by a sputtering method, and as shown in FIG. Then, the piezoelectric element 46 (PZT film) and the upper electrode 54 are patterned.

  Specifically, PZT film sputtering (film thickness 3 μm to 15 μm), metal film sputtering (film thickness 500 μm to 3000 μm), resist formation by photolithography, patterning (etching), and resist stripping by oxygen plasma. Examples of the lower and upper electrode materials include Au, Ir, Ru, and Pt that have high affinity with the PZT material that is a piezoelectric element and have heat resistance.

  Thereafter, as shown in FIG. 8G, a low water permeable insulating film (SiOx film) 80 is laminated on the upper surfaces of the lower electrode 52 and the upper electrode 54 exposed on the upper surface, and the low water permeable insulating film is further formed. (SiOx film) A resin film 82 having ink resistance and flexibility, for example, a polyimide-based, polyamide-based, epoxy-based, polyurethane-based, silicon-based resin film or the like is laminated on the upper surface of the (SiOx film) 80 and patterned. Thus, an opening 84 (contact hole) for connecting the piezoelectric element 46 and the metal wiring 86 is formed.

  Specifically, a photosensitive polyimide (for example, a photosensitive polyimide manufactured by Fuji Film Arch Co., Ltd.) is used to deposit a low water-permeable insulating film (SiOx film) 80 having a high dangling bond density by the Chemical Vapor Deposition (CVD) method. Patterning is performed by applying, exposing, and developing Durimide 7520), and the SiOx film is etched by the reactive ion etching (RIE) method using CF4 gas using the photosensitive polyimide as a mask. Although the SiOx film is used here as the low water permeable insulating film, it may be a SiNx film, a SiOxNy film, or the like.

  Next, as shown in FIG. 8H, a metal film is laminated on the upper surface of the upper electrode 54 and the resin film 82 in the opening 84, and the metal wiring 86 is patterned. Specifically, an Al film (thickness 1 μm) is deposited by sputtering, a resist is formed by photolithography, an Al film is etched by RIE using a chlorine-based gas, and oxygen plasma is applied. Then, the process of peeling the resist film is performed to join the upper electrode 54 and the metal wiring 86 (Al film). Although not shown, an opening 84 is also provided on the lower electrode 52 and is connected to the metal wiring 86 in the same manner as the upper electrode 52.

  Further, as shown in FIG. 8 (I), a resin protective film 88 (for example, photosensitive polyimide Durimide 7320 manufactured by Fuji Film Arch Co., Ltd.) is laminated on the upper surfaces of the metal wiring 86 and the resin film 82 and patterned. The resin protective film 88 is made of the same kind of resin material as the resin film 82. At this time, the resin protective film 88 is not stacked above the piezoelectric element 46 in a portion where the metal wiring 86 is not patterned (only the resin film 82 is stacked).

  Here, the fact that the resin protective film 88 is not laminated above the piezoelectric element 46 (the upper surface of the resin film 82) prevents the displacement (flexible deformation in the vertical direction) of the diaphragm 48 (piezoelectric element 46) from being hindered. It is to do. Further, when the metal wiring 86 drawn out from the upper electrode 54 of the piezoelectric element 46 (connected to the upper electrode 54) is covered with a protective film 88 made of resin, the metal wiring 86 is laminated on the resin protective film 88. Since the resin film 82 is made of the same kind of resin material, the bonding force covering the metal wiring 86 is strengthened, and corrosion of the metal wiring 86 due to the penetration of the ink 110 from the interface can be prevented.

  In addition, since this resin protective film 88 is made of the same kind of resin material as the partition wall 42 (photosensitive dry film 98), the bonding force to the partition wall 42 (photosensitive dry film 98) is also strong. Therefore, the ink 110 can be further prevented from entering from the interface. In addition, when the resin materials are made of the same kind as described above, the thermal expansion coefficients thereof are substantially equal, so that there is an advantage that the generation of thermal stress can be reduced.

  Next, as shown in FIG. 8J, the drive IC 60 is flip-chip mounted on the metal wiring 86 via the bumps 62. At this time, the drive IC 60 is processed to a predetermined thickness (70 μm to 300 μm) in a grinding process that is performed in advance at the end of the semiconductor wafer process. If the driving IC 60 is too thick, patterning of the partition walls 42 and formation of the bumps 64 may be difficult.

  As a method for forming the bump 62 for flip-chip mounting the drive IC 60 on the metal wiring 86, electroplating, electroless plating, ball bump, screen printing or the like can be applied. Thus, the piezoelectric element substrate 70 is manufactured, and the top plate 40 made of, for example, glass is bonded (bonded) to the piezoelectric element substrate 70. In FIG. 9 described below, for convenience of explanation, the wiring formation surface is described as the lower surface, but in the actual process, the upper surface is the upper surface.

  In the production of the glass top plate 40, as shown in FIG. 9A, the top plate 40 itself has a thickness (0.3 mm to 1.5 mm) that can secure the strength to be a support. There is no need to provide a separate support. First, as shown in FIG. 9B, the metal wiring 90 is laminated on the lower surface of the top plate 40 and patterned. Specifically, an Al film (thickness 1 μm) is deposited by sputtering, a resist is formed by photolithography, an Al film is etched by RIE using a chlorine-based gas, and oxygen plasma is applied. In this process, the resist film is removed.

  Then, as shown in FIG. 9C, a resin film 92 (for example, photosensitive polyimide Durimide 7320 manufactured by Fuji Film Arch Co., Ltd.) is laminated and patterned on the surface on which the metal wiring 90 is formed. At this time, the resin film 92 is not laminated in order to join the bumps 64 to some of the metal wirings 90.

  Next, as shown in FIG. 9D, a resist is patterned by photolithography on the surface of the top plate 40 on which the metal wiring 90 is formed. The surface on which the metal wiring 90 is not formed is covered with a protective resist 94. Here, the reason why the protective resist 94 is applied is to prevent the top plate 40 from being etched from the back surface of the surface on which the metal wiring 90 is formed in the next wet (SiO2) etching process. In the case where photosensitive glass is used for the top plate 40, the step of applying the protective resist 94 can be omitted.

  Next, as shown in FIG. 9E, the top plate 40 is subjected to wet (SiO2) etching with an HF solution, and then the protective resist 94 is stripped with oxygen plasma. Then, as shown in FIG. 9F, a photosensitive dry film 96 (for example, Raytec FR-5025: 25 μm thickness manufactured by Hitachi Chemical Co., Ltd.) is exposed and developed on the opening 40A portion formed on the top plate 40. Pattern (build). This photosensitive dry film 96 becomes an air damper 44 that relieves pressure waves.

  Then, as shown in FIG. 9G, a photosensitive dry film 98 (100 μm thickness) is laminated on the resin film 92 and patterned by exposure and development. This photosensitive dry film 98 becomes a partition wall 42 that defines the ink pool chamber 38. The partition wall 42 is not limited to the photosensitive dry film 98, and may be a resin coating film (for example, SU-8 resist manufactured by Kayaku Microchem Corporation). At this time, it may be applied by a spray coating device, and then exposed and developed.

  Finally, as shown in FIG. 9H, bumps 64 are formed by plating or the like on the metal wiring 90 on which the resin film 92 is not laminated. Since the bumps 64 are electrically connected to the metal wiring 86 on the drive IC 60 side, the bumps 64 are formed to have a height higher than that of the photosensitive dry film 98 (partition wall 42) as shown in the figure.

  When the manufacture of the top plate 40 is completed in this manner, as shown in FIG. 10A, the top plate 40 is placed on the piezoelectric element substrate 70, and the two are bonded (joined) by thermocompression bonding. That is, the photosensitive dry film 98 (the partition wall 42) is bonded to the resin protective film 88 that is a photosensitive resin layer, and the bumps 64 are bonded to the metal wiring 86.

  At this time, since the height of the bump 64 is higher than the height of the photosensitive dry film 98 (the partition wall 42), the bump 64 is formed by bonding the photosensitive dry film 98 (the partition wall 42) to the resin protective film 88. It is automatically joined to the metal wiring 86. That is, since the height of the solder bumps 64 can be easily adjusted (because they are easily crushed), the ink pool chamber 38 can be sealed with the photosensitive dry film 98 (the partition wall 42) and the bumps 64 can be easily connected.

  When the bonding between the partition wall 42 and the bump 64 is completed, a sealing resin material 58 (for example, epoxy resin) is injected into the drive IC 60 as shown in FIG. That is, the resin material 58 is poured from the inlet 40B (see FIG. 5) formed in the top plate 40. By injecting the resin material 58 and sealing the drive IC 60 in this way, the drive IC 60 can be protected from the external environment such as moisture, and the adhesive strength between the piezoelectric element substrate 70 and the top plate 40 can be improved. Can avoid damage in the subsequent process, for example, damage caused by water or a grinding piece when the completed piezoelectric element substrate 70 is divided into the ink jet recording heads 32 by dicing.

  Next, as shown in FIG. 10C, an adhesive stripping solution is injected from the through-hole 76A of the first support substrate 76 to selectively dissolve the adhesive 78, whereby the first support substrate 76 is removed. A peeling process is performed from the piezoelectric element substrate 70. Thereby, as shown in FIG. 10D, the piezoelectric element substrate 70 to which the top plate 40 is coupled (joined) is completed. From this state, the top plate 40 becomes a support for the piezoelectric element substrate 70.

  On the other hand, as shown in FIG. 11A, the flow path substrate 72 is first prepared with a glass second support substrate 100 having a plurality of through holes 100A. Similar to the first support substrate 76, the second support substrate 100 may be anything as long as it does not bend and is not limited to glass, but glass is preferable because it is hard and inexpensive. Known methods for producing the second support substrate 100 include femtosecond laser processing of a glass substrate and exposure / development of a photosensitive glass substrate (for example, PEG3C manufactured by HOYA Corporation).

  Then, as shown in FIG. 11B, an adhesive 104 is applied to the upper surface (front surface) of the second support substrate 100, and as shown in FIG. 11C, the resin substrate 102 is applied to the upper surface (front surface). (For example, an amide-imide substrate having a thickness of 0.1 mm to 0.5 mm) is bonded. Next, as shown in FIG. 11D, the upper surface of the resin substrate 102 is pressed against the mold 106 and subjected to a heating / pressurizing process. After that, as shown in FIG. 11E, the mold 106 is released from the resin substrate 102 to complete the flow path substrate 72 in which the pressure chambers 50, the nozzles 56, and the like are formed.

  When the flow path substrate 72 is thus completed, as shown in FIG. 12A, the piezoelectric element substrate 70 and the flow path substrate 72 are bonded (joined) by thermocompression bonding. Then, as shown in FIG. 12B, an adhesive stripping solution is injected from the through-hole 100A of the second support substrate 100 to selectively dissolve the adhesive 104, thereby the second support substrate 100. Is peeled from the flow path substrate 72.

  Thereafter, as shown in FIG. 12C, the surface from which the second support substrate 100 has been peeled is subjected to a polishing process using an abrasive mainly composed of alumina or an RIE process using oxygen plasma, thereby The layer is removed and the nozzle 56 is opened. Then, as shown in FIG. 12D, the inkjet recording head 32 is formed by applying a fluorine material 108 (for example, Cytop manufactured by Asahi Glass Co., Ltd.) as a water repellent to the lower surface where the nozzle 56 is opened. When completed, as shown in FIG. 12E, the ink 110 can be filled into the ink pool chamber 38 or the pressure chamber 50.

  The photosensitive dry film 96 (air damper 44) is not limited to the one provided in the ink pool chamber 38 inside the top plate 40. For example, as shown in FIG. It is good also as a structure provided in. That is, the photosensitive dry film 96 (air damper 44) may be attached to the top plate 40 from the outside of the ink pool chamber 38 immediately before the ink 110 filling step.

(Mold manufacturing method)
Hereinafter, the manufacturing process of the mold 106 will be described in detail. In the following manufacturing process of the mold 106, anisotropic etching means etching in the substrate depth direction by repeatedly performing isotropic etching and film formation on the groove wall surface by deposition. .

First, a flat silicon substrate 112 is prepared, and an oxide film (SiO ₂ film) 114 is formed on the side where the nozzle 56 is not formed (that is, the upper side of the paper). Then, an opening 116 having a predetermined size is formed in the oxide film 114 (see FIG. 14A). Note that a nitride film may be formed instead of the oxide film 114.

  Next, anisotropic etching in the substrate depth direction is performed (see FIG. 14B).

  Next, the oxide film 114 is removed (see FIG. 14C). At this stage, burrs 121 (see FIGS. 16G and 17B) are formed on the opening edge of the groove 118. The principle of forming the burr 121 will be described later in detail.

  Then, after dry etching is performed on the entire surface, a resist solution is further applied on the upper side of the substrate to form a resist film 124 having openings 126 in portions corresponding to the pressure chambers 50 and the ink flow paths 68 (FIG. 14-1). (See (D)).

  Then, by performing anisotropic etching from the upper side of the substrate, a channel groove 128 corresponding to the ink channel 68 is formed (see FIG. 14E).

  Then, the resist film 124 is removed (see FIG. 14-2 (F)).

  Further, a resist solution is applied to the upper side of the substrate, and a resist film 134 having an opening 136 at a portion corresponding to the nozzle 56 is formed (see FIG. 14-2 (G)).

  Then, small holes 138 are formed by performing anisotropic etching from the upper side of the substrate (see FIG. 14-2 (H)).

  Then, the resist film 134 is removed, and the entire surface is etched from the upper side of the substrate to remove burrs (not shown) formed at the opening edges of the small holes 138, thereby forming the master substrate 142 (FIG. 14-2 (I) reference). The principle of removing the burr 121 will be described later in detail.

  Hereinafter, manufacturing the mold 106 using the silicon substrate with the tapered wall surface formed in this way as the master substrate 142 will be described with reference to FIG.

  First, the master substrate 142 is placed at a position where electroforming can be performed with the groove 118 facing upward (see FIG. 15A). Then, electroforming is performed with Ni (see FIG. 15B).

  Further, the master substrate 142 is removed by etching or the like. As a result, a Ni mold die 106 is formed (see FIG. 15C).

  Then, the mold 106 is pressed against the upper surface of the resin substrate 102 and subjected to a heating / pressurizing process (see FIG. 11D).

  Thereafter, the mold 106 is released from the resin substrate 102 to complete the flow path substrate 72 in which the pressure chambers 50, the nozzles 56, and the like are formed (see FIG. 11E).

  In the present embodiment, since the burrs at the opening edge of the groove 118 and the small hole 138 forming the concave portion of the master substrate 142 are removed, a constriction is formed at the base of the convex portion 105 and the convex portion 107 of the mold 106. Not. Therefore, when the mold 106 is released from the resin substrate 102, the peripheral edge of the convex portion of the resin substrate 102, that is, the opening edge of the concave portion is not lost.

  Note that a release agent may be applied to the surface of the mold 106 or the surface of the resin substrate 102. Thereby, the mold release process between the mold 106 and the resin substrate 102 can be performed more smoothly.

  Hereinafter, the principle of forming the burr 121 and the procedure for removing the burr 121 will be described with reference to the drawings. In this embodiment, in order to perform anisotropic etching, deposition film formation and isotropic etching are repeated (3 to 4 cycles). In FIG. 16, on the right side of the cross-sectional view, the deposition time by deposition is indicated by oblique lines, and the etching time is indicated by white lines.

  In this embodiment, after the isotropic etching, the deposition film 117 is coated (see FIG. 16A), isotropic etching (see FIG. 16B), and the deposition film 117 is coated (see FIG. 16C), isotropic etching (see FIG. 16D), deposition film 117 coating (see FIG. 16E), isotropic etching (see FIG. 16F), and so on. By proceeding, the groove 118 advances in the substrate depth direction.

  The deposition film 117 is removed at the stage of etching to a predetermined depth (see FIG. 16G).

  Here, since a deposition film cannot be sufficiently formed on the side wall of the groove 118 at the initial stage of etching, burrs 121 are formed on the opening edge of the groove 118 (see FIG. 16G). Even if the deposition film 117 is removed, as shown in FIG. 17A, the oxide film 114 remains on the upper side of the wall portion 122 where the groove 118 is formed.

  In this state, the oxide film 114 is removed with hydrofluoric acid or the like (see FIG. 17B). The same applies when a nitride film is formed instead of the oxide film 114.

  Then, the entire surface is etched by dry etching, and the wall upper portion 122U having the burr 121 is removed. At this time, the other groove walls are also etched. This whole surface etching by dry etching is suitable for controlling a fine shape of about several μm by a simple method, and the edge can be slightly rounded.

  As a result of the removal of the wall upper part 122U, a burr-free wall part 123 from which the burr 121 has been removed is formed (see FIG. 17C).

  Note that, instead of performing the entire surface etching by dry etching, the entire surface etching by wet etching using hydrofluoric acid may be performed as shown in FIG. In this whole surface etching by wet etching, since the silicon surface is uniformly etched, it is not very suitable for controlling a fine dimension, but the edge can be sufficiently rounded.

  Further, without removing the oxide film 114 using hydrofluoric acid or hydrofluoric acid, the upper wall portion 122U may be removed by polishing (see FIG. 19). Since this polishing process requires a certain amount of shaving, it is not very suitable for fine dimensional control, but it is not necessary to remove the oxide film 114 using hydrofluoric acid or hydrofluoric acid. This greatly contributes to simplification of the manufacturing process, that is, to shorten the manufacturing time.

  The principle of burr generation and the burr removal procedure have been described above for the opening edge of the groove 118, but the same applies to the opening edge of the small hole 138.

(Function)
Next, the operation of the inkjet recording apparatus 10 including the inkjet recording head 32 manufactured as described above will be described. First, when an electrical signal instructing printing is sent to the inkjet recording apparatus 10, one sheet of recording paper P is picked up from the paper feed tray 26 and conveyed to a predetermined position by the sub-scanning mechanism 18.

  On the other hand, in the ink jet recording unit 30, the ink 110 has already been injected (filled) from the ink tank 34 into the ink pool chamber 38 of the ink jet recording head 32 via the ink supply port 36, and the ink 110 filled in the ink pool chamber 38 is The pressure chamber 50 is supplied (filled) through the ink flow paths 66 and 68. At this time, a meniscus in which the surface of the ink 110 is slightly recessed toward the pressure chamber 50 is formed at the tip (ejection port) of the nozzle 56.

  The ink jet recording head 32 mounted on the carriage 12 selectively ejects ink droplets from the plurality of nozzles 56 while moving in the main scanning direction, so that the image data is transferred to a predetermined band area of the recording paper P. Record part of the image based on. That is, a voltage is applied to a predetermined piezoelectric element 46 at a predetermined timing by the drive IC 60, and the vibration plate 48 is bent and deformed in the vertical direction (vibrated out of plane) to apply the ink 110 in the pressure chamber 50. And ejected as ink droplets from a predetermined nozzle 56.

  When a part of the image based on the image data is recorded on the recording paper P in this way, the recording paper P is conveyed by a predetermined pitch by the sub-scanning mechanism 18, and the ink jet recording head 32 is moved in the main scanning direction as described above. However, a part of the image based on the image data is recorded in the next band area of the recording paper P by selectively ejecting ink droplets selectively from the plurality of nozzles 56 again. Such an operation is repeated, and when the image based on the image data is completely recorded on the recording paper P, the sub-scanning mechanism 18 transports the recording paper P to the end, and the recording paper P is placed on the paper discharge tray 28. Is discharged. Thereby, the printing process (image recording) on the recording paper P is completed.

  As described above, in this embodiment, since the burr 121 formed on the wall portion 123 of the master substrate 142 is removed, the base of the convex portion 105 and the convex portion 107 of the mold 106 is not constricted. Accordingly, when the resin substrate 102 is molded with the mold 106, a part of the resin substrate 102 is prevented from being caught and chipped, and when the resin substrate 102 is molded, the resin substrate 102 can be stably molded. The shape and size of the pressure chamber 50 and the nozzle 56 can be made uniform. Further, the mold 106 can be easily separated from the resin substrate 102. This has a greater effect as the size of the channel groove 128 is smaller.

  Further, in the ink jet recording head 32, the ink pool chamber 38 is provided on the opposite side (upper side) of the pressure chamber 50 with the vibration plate 48 (piezoelectric element 46) interposed therebetween. In other words, the vibration plate 48 (piezoelectric element 46) is disposed between the ink pool chamber 38 and the pressure chamber 50, and the ink pool chamber 38 and the pressure chamber 50 are configured not to exist on the same horizontal plane. Therefore, the pressure chambers 50 are arranged close to each other, and the nozzles 56 are arranged with high density.

  The drive IC 60 for applying a voltage to the piezoelectric element 46 is disposed between the diaphragm 48 and the top plate 40 and is configured not to be exposed (projected) from the diaphragm 48 or the top plate 40 to the outside. (Built in the ink jet recording head 32). Therefore, compared to the case where the drive IC 60 is mounted outside the ink jet recording head 32, the length of the metal wiring 86 connecting the piezoelectric element 46 and the drive IC 60 can be shortened. Has been realized.

  That is, with a practical wiring resistance value, the nozzle 56 has a high density, that is, a high-density matrix arrangement of the nozzles 56, thereby realizing a high resolution. In addition, since the drive IC 60 is flip-chip mounted on the piezoelectric element substrate 70 in which the piezoelectric element 46 and the like are formed on the vibration plate 48, high-density wiring connection can be easily performed. It can also be reduced (can be made thinner). Accordingly, the ink jet recording head 32 can be downsized.

  Specifically, with the conventional FPC system electrical connection, the nozzle resolution is limited to 600 npi (nozzle per pitch), but with the system of the present invention, it is possible to easily arrange 1200 npi. In addition, the size can be reduced to 1/2 or less because the FPC is not used when the 600 npi nozzle arrangement is compared as an example.

  Further, since the gap around the drive IC 60 is filled with the resin material 58, the bonding strength between the top plate 40 and the piezoelectric element substrate 70 is increased, and the drive IC 60 is sealed by the resin material 58. Therefore, the driving IC 60 can be protected from the external environment such as moisture. Further, since the metal wiring 86 on the piezoelectric element substrate 70 that connects the piezoelectric element 46 and the driving IC 60 is covered with the resin protective film 88, the corrosion of the metal wiring 86 due to the ink 110 can be prevented. In addition, since the resin protective film 88 and the resin film 82 that are coated so as to sandwich the metal wiring 86 are made of the same type of resin material, the thermal expansion coefficients are substantially equal, thereby generating less thermal stress.

  In any case, the piezoelectric element substrate 70 and the flow path substrate 72 constituting the ink jet recording head 32 are always manufactured on the hard support substrates 76 and 100, respectively, and in those manufacturing processes, the support substrate 76 is provided. , 100 is no longer necessary, and a manufacturing method is adopted in which the support substrates 76, 100 are removed. Therefore, the structure is extremely easy to manufacture. Note that the manufactured (completed) inkjet recording head 32 is supported by the top plate 40 (since the top plate 40 is used as a support), and thus its rigidity is ensured.

  In addition, in the inkjet recording apparatus 10 of the above-described embodiment, the inkjet recording units 30 of black, yellow, magenta, and cyan are mounted on the carriage 12 and selectively selected from the inkjet recording heads 32 of these colors based on image data. Although ink droplets are ejected and a full-color image is recorded on the recording paper P, ink jet recording in the present invention is not limited to recording characters and images on the recording paper P.

  That is, the recording medium is not limited to paper, and the liquid to be ejected is not limited to ink. For example, industrially used liquids such as creating color filters for displays by discharging ink onto polymer films or glass, or forming bumps for component mounting by discharging welded solder onto a substrate The ink jet recording head 32 according to the present invention can be applied to all droplet ejecting apparatuses.

  In the inkjet recording apparatus 10 of the above embodiment, the example of the partial width array (PWA) having the main scanning mechanism 16 and the sub-scanning mechanism 18 has been described. However, the inkjet recording in the present invention is not limited to this, and the paper width A corresponding so-called Full Width Array (FWA) may be used. Rather, since the present invention is effective for realizing a high-density nozzle arrangement, it is suitable for FWA that requires one-pass printing.

  Instead of the resin substrate 102, a silicon flow path substrate having the same shape as the flow path substrate 72 may be processed by performing anisotropic etching and burr removal on the silicon substrate. Thereby, the shape of the flow path substrate constituting the discharge side of the ink jet recording head can be made to correspond to various three-dimensional structures. Accordingly, the degree of freedom in design can be expanded and the performance of the ink jet recording head can be greatly improved.

  In the above description, the example of manufacturing the inkjet recording head 10 has been described. However, a master substrate having such a taper-shaped convex portion is manufactured to form a mold, and this mold It is applicable not only to manufacture the inkjet recording head 10 but also to manufacturing a general fine mold. In particular, this effect is conspicuous when molding with nano-imprinting technology.

  Specifically, using a drawing, as shown in FIG. 20, when a mold 146 having a very small width d of the concave portion 144 formed by the adjacent convex portion 143 is used and is molded by the nano-imprinting technique, The molding member 148 can be molded with high accuracy without being chipped. Thereby, a highly accurate semiconductor device etc. can be manufactured.

[Second Embodiment]
Next, a second embodiment will be described. This embodiment is an example of forming a trench for manufacturing a trench capacitor.

As shown in FIG. 21A, in this embodiment, the silicon substrate 222 on which the silicon film 224 and the oxide film 226 having a predetermined pattern are formed is etched to form the silicon film 224 and the oxide film (SiO ₂ film). ) Trenches (grooves) 228 are formed between them.

  In forming this trench 228, in the present embodiment, anisotropic etching is performed in the same manner as in the first embodiment to form the trench 228, and then the burrs formed at the opening edge of the trench 228 are removed ( FIG. 21A shows the state after the removal of burrs).

  After removing the burrs, when a film is formed on the opening side of the trench 228 by a CVD method, a trench capacitor 233 and a polysilicon film 234 with good coverage can be formed as shown in FIG. Therefore, a high-performance semiconductor device 240 in which defects such as voids do not occur in the trench capacitor 233 can be manufactured.

1 is a schematic perspective view illustrating an ink jet recording apparatus according to a first embodiment. 1 is a schematic perspective view showing an ink jet recording unit mounted on a carriage in the first embodiment. FIG. 1 is a schematic plan view showing the configuration of an inkjet recording head in the first embodiment. Schematic sectional view taken along line XX in FIG. 3 in the first embodiment. Schematic plan view showing a top plate before being cut as an ink jet recording head in the first embodiment Schematic plan view showing bumps of a driving IC in the first embodiment Explanatory drawing of the whole process which manufactures an ink jet recording head in a 1st embodiment. Explanatory drawing which shows process (A)-(F) which manufactures a piezoelectric element board | substrate in 1st Embodiment. Explanatory drawing which shows process (G)-(J) which manufactures a piezoelectric element board | substrate in 1st Embodiment. Explanatory drawing which shows process (A)-(D) which manufactures a top plate in 1st Embodiment. Explanatory drawing which shows process (E)-(H) which manufactures a top plate in 1st Embodiment. Explanatory drawing which shows process (A)-(B) which joins a top plate to a piezoelectric element board | substrate in 1st Embodiment. Explanatory drawing which shows process (C)-(D) which joins a top plate to a piezoelectric element board | substrate in 1st Embodiment. Explanatory drawing which shows the process of manufacturing a flow-path board | substrate in 1st Embodiment. Explanatory drawing which shows process (A)-(B) which joins a flow-path board | substrate to a piezoelectric element board | substrate in 1st Embodiment. Explanatory drawing which shows process (C)-(E) which joins a flow-path board | substrate to a piezoelectric element board | substrate in 1st Embodiment. Explanatory drawing which shows the inkjet recording head from which arrangement | positioning of an air damper differs in 1st Embodiment. Explanatory drawing which shows process (A)-(E) which manufactures a metal mold | die in 1st Embodiment. Explanatory drawing which shows process (A)-(I) which manufactures a metal mold | die in 1st Embodiment. Explanatory drawing which shows process (A)-(C) which shape | molds a flow-path board | substrate with a metal mold | die in 1st Embodiment. Explanatory drawing which shows trench formation process (A)-(G) in 1st Embodiment (The film-forming time by deposition is shown by the oblique line and the etching time is shown on the right side of sectional drawing, respectively) Explanatory drawing which shows a burr | flash removal process (A)-(C) in 1st Embodiment. Explanatory drawing which shows performing a burr | flash removal process by another method in 1st Embodiment. Explanatory drawing which shows performing a burr | flash removal process by another method in 1st Embodiment. Explanatory drawing which shows the process (A)-(E) shape | molded with a metal mold | die with the modification of 1st Embodiment. Explanatory drawing which shows process (A) and (B) which form a trench structure in 2nd Embodiment. Explanatory drawing which shows process (A)-(G) which forms a groove | channel by etching in a silicon substrate with the conventional manufacturing method (The film-forming time by deposition is slanted on the right side of sectional drawing, and etching time is outlined. And show each) Explanatory drawing which shows the process (A)-(E) which shape | molds with a metal mold | die with the conventional manufacturing method. Explanatory drawing which shows the process (A) and (B) which form a trench with the conventional manufacturing method

Explanation of symbols

10 Inkjet recording device (image forming device)
32 Inkjet recording head 106 Mold (mold)
112 Silicon substrate 114 Oxide film (mask)
118 groove (recess)
138 Small hole (concave)
143 Projection 166 Mold die 222 Silicon substrate 226 Oxide film (mask)
228 trench 240 semiconductor device 274 oxide film (mask)
296 Mold 326 Oxide film (mask)
328 trench

Claims (9)

A silicon structure manufacturing method for forming at least one of a fine convex part or a concave part by performing trench etching on a silicon substrate on which a patterned mask is formed,
A trench formation step of forming a trench by performing cycle etching;
And a burr removing step of removing a burr formed at an opening edge of the trench.   2. The method of manufacturing a silicon structure according to claim 1, wherein, as the burr removing step, the entire surface is etched after the mask is removed. 3.   The silicon structure manufacturing method according to claim 1, wherein wet etching is performed after the removal of the mask as the burr removing step.   The silicon structure manufacturing method according to claim 1, wherein, as the burr removing step, a surface to be etched of the silicon substrate is polished.   A mold mold manufactured by the silicon structure manufacturing method according to any one of claims 1 to 4, wherein the mold mold to be molded by nano-imprinting technology is manufactured. Method.   A silicon structure manufactured by the method for manufacturing a silicon structure according to claim 1.   An ink jet recording head comprising the silicon structure according to claim 6.   An image forming apparatus comprising the ink jet recording head according to claim 7.   A semiconductor device comprising the silicon structure according to claim 6.

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