JP2006049847A - Methods for manufacturing wiring substrate, thin film transistor, display device and television device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing technique for a display device manufactured by improving the utilization efficiency of materials and simplifying manufacturing processes, and to provide a technique for forming a pattern such as a wiring, constituting the display device, having a desired pattern with good controllability. <P>SOLUTION: The subject method for manufacturing a wiring substrate includes the steps of: forming a first region having a material to be treated; modifying the surface of the material to be treated partly to form a second region having a boundary with respect to the first region; continuously discharging a composition containing a conductive material to a part of the first region across the boundary and the second region; solidifying the composition to form a conductive layer; and removing the conductive layer formed in the part of the first region across the boundary. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

    The present invention relates to a method for manufacturing a wiring substrate, a thin film transistor, a display device, and a television device.

  A thin film transistor (hereinafter referred to as “TFT”) and an electronic circuit using the thin film transistor are manufactured by laminating various thin films such as a semiconductor, an insulator, and a conductor on a substrate and appropriately forming a predetermined pattern by a photolithography technique. Has been. Photolithographic technology is a technology that uses a light to transfer a circuit pattern or other pattern formed on a transparent flat plate called a photomask onto a target substrate. It is widely used in the manufacturing process.

In the manufacturing process using the conventional photolithography technology, a multi-step process such as exposure, development, baking, and peeling is required only for handling a mask pattern formed using a photosensitive organic resin material called a photoresist. Become. Therefore, the manufacturing cost inevitably increases as the number of photolithography processes increases. In order to improve such problems, attempts have been made to manufacture TFTs by reducing the photolithography process (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 11-251259

  The present invention reduces the number of photolithography processes in the manufacturing process of a TFT, an electronic circuit using the TFT, and a display device formed by the TFT, simplifies the manufacturing process, and a large-area substrate whose one side exceeds 1 meter. Another object of the present invention is to provide a technique that can be manufactured at a low cost and with a high yield.

  It is another object of the present invention to provide a technique capable of forming components such as wirings constituting these display devices in a desired shape with good controllability.

    In the present invention, a region for forming a conductive layer, an insulating layer, or the like used for wiring or the like is modified by irradiating light. By this treatment, the adhesion between the formed region and the non-formed region with respect to the formed conductive layer is made different. After that, a conductive material is deposited in the vicinity of the formation region by discharging (including jetting) or the like to form a conductive layer. If the formation area is pre-treated with the high adhesion area and the non-formation area is pre-treated with the low adhesion area, the difference between the adhesion forces is used to remove unnecessary parts formed on the non-formation area. And delicate patterning can be performed. Note that the vicinity of the formation region means the formation region and its vicinity.

  The display device of the present invention includes a light-emitting element and a TFT in which a layer containing an organic substance that emits light called electroluminescence (hereinafter also referred to as “EL”) or a mixture of an organic substance and an inorganic substance is interposed between electrodes. And a liquid crystal display device using a liquid crystal element having a liquid crystal material as a display element.

    According to one method for manufacturing a wiring board of the present invention, a first region having an object to be processed is formed, a surface of a part of the object to be processed is modified, and a second region having a boundary line with the first region is formed. Forming a region, discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line, solidifying the composition to form a conductive layer; The conductive layer formed in a part of the first region beyond the boundary line is removed.

    According to one method for manufacturing a wiring board of the present invention, a first region having an object to be processed is formed, a surface of a part of the object to be processed is modified, and a second region having a boundary line with the first region is formed. Forming a region, discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line, solidifying the composition to form a conductive layer; An adhesive surface of a substance having an adhesive surface is adhered to the conductive layer, and the material having the adhesive surface and the conductive layer formed in a part of the first region beyond the boundary line are peeled off.

    According to one method for manufacturing a wiring board of the present invention, a first region having an object to be processed is formed, a part of the surface of the object to be processed is modified by light irradiation, and the first region and a boundary line are formed. A second region is formed, a composition containing a conductive material is continuously discharged to a part of the first region and the second region beyond the boundary line, and the composition is solidified to form a conductive layer. And the conductive layer formed in a part of the first region beyond the boundary line is removed.

    According to one method for manufacturing a wiring board of the present invention, a first region having an object to be processed is formed, a part of the surface of the object to be processed is modified by light irradiation, and the first region and a boundary line are formed. A second region is formed, a composition containing a conductive material is continuously discharged to a part of the first region and the second region beyond the boundary line, and the composition is solidified to form a conductive layer. Then, the adhesive surface of the substance having an adhesive surface is bonded to the conductive layer, and the substance having the adhesive surface and the conductive layer formed in a part of the first region beyond the boundary line are peeled off.

    According to one method for manufacturing a thin film transistor of the present invention, a first region having an object to be processed is formed, a part of the surface of the object to be processed is modified, and a second region having a boundary line with the first region Forming a gate electrode layer by discharging a composition containing a conductive material continuously to a part of the first region and the second region across the boundary line, and solidifying the composition; The gate electrode layer formed in a part of the first region beyond the boundary line is removed.

    According to one method for manufacturing a thin film transistor of the present invention, a first region having an object to be processed is formed, a part of the surface of the object to be processed is modified, and a second region having a boundary line with the first region Forming a gate electrode layer by discharging a composition containing a conductive material continuously to a part of the first region and the second region across the boundary line, and solidifying the composition; An adhesive surface of a substance having an adhesive surface is bonded to the gate electrode layer, and the material having the adhesive surface and the gate electrode layer formed in a part of the first region beyond the boundary line are peeled off.

    In one embodiment of the method for manufacturing a thin film transistor of the present invention, a first region having an object to be processed is formed, a part of the surface of the object to be processed is modified by light irradiation, and the first region and the boundary line are provided. A gate electrode layer is formed by forming a second region, discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary, and solidifying the composition. And the gate electrode layer formed in part of the first region beyond the boundary line is removed.

    In one embodiment of the method for manufacturing a thin film transistor of the present invention, a first region having an object to be processed is formed, a part of the surface of the object to be processed is modified by light irradiation, and the first region and the boundary line are provided. A gate electrode layer is formed by forming a second region, discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary, and solidifying the composition. The adhesive surface of the substance having an adhesive surface is adhered to the gate electrode layer, and the material having the adhesive surface and the gate electrode layer formed in a part of the first region beyond the boundary line are peeled off.

  According to the present invention, wiring and the like can be easily formed in a desired pattern with good controllability. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

(Embodiment 1)
Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

    An embodiment of the present invention will be described with reference to FIGS.

    The present invention relates to an object necessary for manufacturing a display panel such as a conductive layer for forming a wiring layer or an electrode or a mask layer for forming a predetermined pattern (all forms such as a film and a layer depending on its purpose and function). The display device is manufactured by forming at least one or more of them in a method that can be selectively formed into a desired shape. The present invention includes all conductive layers such as a gate electrode layer, a source electrode layer, and a drain electrode layer, a semiconductor layer, a mask layer, an insulating layer, and the like that constitute a thin film transistor and a display device. Applicable to components. As a method that can be selectively formed into a desired shape, a conductive layer, an insulating layer, or the like is formed, and droplets of a composition prepared for a specific purpose are selectively ejected (ejected) to form a predetermined pattern. It is possible to use a droplet discharge (ejection) method (also called an ink jet method depending on the method). In addition, a method in which an object can be transferred or drawn in a desired pattern, for example, various printing methods (a method in which a desired pattern such as screen (stencil) printing, offset (lithographic) printing, letterpress printing or gravure (intaglio printing) is formed) Etc. can also be used.

    This embodiment mode uses a method in which a composition containing a material having fluidity is ejected (ejected) as droplets to form a desired pattern. A droplet containing a material to be formed is ejected onto a formation region of the formed product, and fixed by firing, drying, or the like to form an object with a desired pattern. In the present invention, pretreatment is performed on the formation region of the formed product.

    One mode of a droplet discharge apparatus used for the droplet discharge method is shown in FIG. The individual heads 1405 and 1412 of the droplet discharge means 1403 are connected to the control means 1407, which can be drawn in a pre-programmed pattern under the control of the computer 1410. The drawing timing may be performed with reference to a marker 1411 formed on the substrate 1400, for example. Alternatively, the reference point may be determined based on the edge of the substrate 1400. This is detected by the imaging means 1404, converted into a digital signal by the image processing means 1409, is recognized by the computer 1410, a control signal is generated, and sent to the control means 1407. As the imaging unit 1404, an image sensor using a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) can be used. Of course, the information on the pattern to be formed on the substrate 1400 is stored in the storage medium 1408. Based on this information, a control signal is sent to the control means 1407, and each head 1405 of the droplet discharge means 1403 is sent. The heads 1412 can be individually controlled.

    The nozzle sizes of the head 1405 and the head 1412 are different, and different materials can be drawn simultaneously with different widths. With one head, conductive material, organic material, inorganic material, etc. can be discharged and drawn respectively. When drawing in a wide area like an interlayer film, the same material is used from multiple nozzles to improve throughput. It is possible to discharge and draw at the same time. In the case of using a large substrate, the head 1405 and the head 1412 can freely scan on the substrate in the direction of the arrow to freely set a drawing area, and a plurality of the same pattern can be drawn on a single substrate. it can.

    In the present invention, as shown in FIG. 2 and FIG. 3, irradiation treatment with light is performed as a pretreatment in the vicinity including the region where the formed material is formed, and treatment for selectively modifying the surface is performed. By this modification treatment, at least two or more types of regions having different adhesion to the formed product can be formed in the discharge region of the composition containing the material to be formed.

    The light used for the modification treatment is not particularly limited, and any one of infrared light, visible light, ultraviolet light, or a combination thereof can be used. For example, light emitted from an ultraviolet lamp, black light, halogen lamp, metal halide lamp, xenon arc lamp, carbon arc lamp, high pressure sodium lamp, or high pressure mercury lamp may be used. In that case, the lamp light source may be lit and irradiated for a necessary time, or may be irradiated multiple times.

    In addition, laser light may be used, and when the laser light is used, the region to be formed can be modified with a more precise pattern, so that an object formed there can be highly fine. A laser beam drawing apparatus that draws laser light (also referred to as a laser beam) that can be used in the present invention in a processing region will be described with reference to FIG. In this embodiment, a laser beam direct drawing apparatus is used in order to select a processing region and directly irradiate and process it instead of selecting a region to be irradiated with laser light through a mask or the like. As shown in FIG. 32, a laser beam direct drawing apparatus 1001 includes a personal computer (hereinafter referred to as a PC) 1002 that executes various controls when irradiating a laser beam, a laser oscillator 1003 that outputs a laser beam, and a laser. A power source 1004 of the oscillator 1003, an optical system (ND filter) 1005 for attenuating the laser light, an acousto-optic modulator (AOM) 1006 for modulating the intensity of the laser light, and an enlargement or reduction of the cross section of the laser light An optical system 1007 composed of a lens for changing the optical path, a mirror for changing the optical path, a substrate moving mechanism 1009 having an X stage and a Y stage, and D / D for digital-analog conversion of control data output from the PC 1002 Acousto-optic modulator 100 according to analog voltage output from A converter 1010 and D / A converter A driver 1011 for controlling, and a driver 1012 for outputting a driving signal for driving the substrate moving mechanism 1009.

As the laser oscillator 1003, a laser oscillator that can oscillate ultraviolet light, visible light, or infrared light can be used. Examples of laser oscillators include excimer laser oscillators such as KrF, ArF, XeCl, and Xe, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, and YAlO _3. A solid-state laser oscillator using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, and a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP can be used. In the solid-state laser oscillator, it is preferable to apply the fundamental wave, the second harmonic to the fifth harmonic.

    Next, a substance (surface) modification process using a laser beam direct drawing apparatus will be described. When the substrate 1008 is mounted on the substrate moving mechanism 1009, the PC 1002 detects the position of the marker attached to the substrate by a camera (not shown). Next, the PC 1002 generates movement data for moving the substrate movement mechanism 1009 based on the detected marker position data and drawing pattern data input in advance. Thereafter, the PC 1002 controls the output light amount of the acousto-optic modulator 1006 via the driver 1011, so that the laser light output from the laser oscillator 1003 is attenuated by the optical system 1005 and then the acousto-optic modulator 1006. The light amount is controlled so as to be a predetermined light amount. On the other hand, the laser light output from the acousto-optic modulator 1006 is changed in the optical path and the shape of the laser light (beam spot) by the optical system 1007, condensed by the lens, and then applied to the object formed on the substrate. Irradiation with the laser beam modifies the object to be processed. At this time, according to the movement data generated by the PC 1002, the movement of the substrate moving mechanism 1009 is controlled in the X direction and the Y direction. As a result, the predetermined place is irradiated with laser light, and the modification of the object to be processed is performed.

    As a result, as shown in FIG. 1A, the object to be processed is modified in the region irradiated with the laser light, and the adhesion with the formed object is improved. Therefore, the region 71 has higher adhesion than the regions 72a and 72b. As a result, the region 71 has a relatively high adhesion (hereinafter also referred to as a high adhesion region) 71 on the substrate 50. Low regions (hereinafter, also referred to as low adhesion regions) 72a and 72b, regions having different adhesion to the formed product are formed. A part of the energy of the laser beam is converted into heat by the material to be processed, and a part of the object to be processed is reacted. Therefore, the width of the region 71 of the processed object is slightly larger than the width of the laser light to be processed. Sometimes it grows. Further, the shorter the wavelength of the laser light, the shorter the diameter of the laser light can be condensed. Therefore, it is preferable to irradiate the laser light with a short wavelength in order to form a processing region with a fine width.

  The spot shape on the film surface of the laser beam is processed by an optical system so as to be a dot, circle, ellipse, rectangle, or line (strictly, a long and narrow rectangle).

    Note that here, the laser beam is selectively irradiated by moving the substrate, but the present invention is not limited to this, and the laser beam can be irradiated by scanning the laser beam in the X-Y axis direction. In this case, it is preferable to use a polygon mirror or a galvanometer mirror for the optical system 1007.

    In addition, light can also be used in combination with light from a lamp light source and laser light, and the only area where patterning is relatively wide is to perform irradiation with a lamp using a mask to perform high-definition patterning. Irradiation treatment can also be performed with laser light. By performing the light irradiation treatment in this way, it is possible to improve the throughput and obtain a highly finely patterned wiring board or the like.

  In this embodiment mode, light is irradiated, and modification is performed so as to change the adhesion of the irradiated region. Accordingly, regions having different adhesion to the formed product are formed in the vicinity of the formed region of the formed product. This difference in adhesion is a relative relationship between the two regions, and it is only necessary to have a difference in the degree of adhesion to the formed product between the formed region and the surrounding non-formed region. Further, the difference in adhesion means that the adhesion formed between the region formed in contact with the region and the region is different. If the region has high adhesion, the formed material is difficult to be removed mechanically (removal by peeling, suction, air blow, etc.), and if the region has low adhesion, the formed material is mechanically removed (peeled, sucked, Easily removed by air blow or the like. In the present invention, by utilizing this difference in adhesion, formations such as a conductive layer, an insulating layer, and a semiconductor layer are selectively formed in a highly delicate pattern. Here, the adhesion is the adhesion between the formed product and the region. Therefore, the adhesion between the composition and the composition containing the fluid forming material that adheres to the formation region and the region is determined. It is not affected by good or bad. For example, in the case of a composition having fluidity, even if the adhesiveness to the forming region is low, the adhesiveness to the forming region becomes high when formed into a solid shape through steps such as baking and drying. Case, and vice versa. In consideration of these cases, the region to be formed, the conditions for the modification treatment, and the formed material may be set and selected as appropriate.

    In this embodiment mode, irradiation treatment with light is performed in order to form regions with different adhesion. A substance that is an object to be processed is formed in the vicinity of the formation region, and a process for selectively increasing adhesion and a process for decreasing adhesion are performed by light. In the present embodiment, a substance having low adhesion as a treatment object is formed in the vicinity of the formation area of the formation, and the substance having low adhesion in the treatment area is irradiated with light that decomposes the substance with low adhesion. Is decomposed and removed to improve the adhesion of the treatment region and form a high adhesion region. Therefore, the concentration of a substance having low adhesion contained in the low adhesion region (in this embodiment, the concentration and amount of a fluorocarbon chain having an effect of reducing adhesion) is higher than that in the high adhesion region. The substance having low adhesion may be a substance containing a material having an effect of lowering the adhesion, and the material that lowers the adhesion is decomposed and destroyed by the light irradiation treatment, and the effect of lowering the adhesion is eliminated. .

    The wavelength of light needs to be a wavelength that is absorbed by a substance having low adhesion. In order to improve the processing efficiency by light irradiation, it is effective to add a light absorber having an absorption region in the wavelength region of the laser light to the material to be processed. A light absorber having an absorption region in the wavelength region of light absorbs irradiated light and radiates (radiates) the surroundings. The radiant energy acts on surrounding materials, and as a result, changes the physical properties of the materials and modifies them. Since the light absorber may be selected in accordance with the light, the range of light selection is widened. In addition, since the light irradiation efficiency can be improved, sufficient processing can be performed even if the light itself has low energy. Therefore, since the apparatus and the process are simplified, cost and time can be reduced and productivity can be improved.

    In this embodiment mode, a light absorber 53 is added to the substance 52 with low adhesion (see FIG. 2A). In this embodiment mode, a substance with low adhesion is used in a liquid state, and is used in a liquid state by being mixed in a solvent or the like. However, since a substance only needs to be attached in the vicinity of the formation region, the formation method is not limited to this embodiment mode. For example, the sol-gel dip coating method, spin coating method, droplet discharge method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron sputtering method, plasma spraying method, plasma spraying method, etc. Can do. When the film is formed by a coating method such as a dip coating method or a spin coating method, it may be fired or dried when the solvent needs to be removed. When a method of directly forming a desired pattern in the vicinity of a formation region, such as a droplet discharge method, is used, the cost of use can be reduced because material utilization efficiency is improved.

  The light absorber added to the low-adhesion substance 52 is mixed (dissolved or dispersed) into the low-adhesion substance 52 as shown in FIG. Then, the droplets 55 are discharged from the discharge device 54 onto the substrate 50, and the composition 51 having low adhesion is formed.

  The light 56 is irradiated only on the formation region of the composition 51 having low adhesion. In this embodiment mode, a laser beam is used as the irradiation light 56 and is emitted and irradiated from the laser irradiation apparatus. Since the light absorber contained in the composition 51 having low adhesion has an absorption region at the wavelength of the light 56, the light absorber absorbs the irradiated light and emits its energy. The substance having low adhesion is decomposed and destroyed by the radiant energy, and the adhesion of the processing region is increased. Therefore, a high adhesion region 58, which is a high adhesion region, is formed, and regions having different adhesion properties are formed in the vicinity of the formation region. Accordingly, the non-processed region has relatively low adhesion, and becomes a low adhesion region 57a and a low adhesion region 57b (see FIG. 2B).

  After forming regions with different adhesion, the light absorber contained in the composition with low adhesion may be removed by washing with alcohol or water. In this case, in order to remove only the light absorber, it is necessary to select a solvent having a high selection ratio so that the substance 52 having low adhesion does not dissolve. In this embodiment mode, the light absorber 53 is washed with a solvent that dissolves, and the light absorber 53 is removed to form a high adhesion region 71, a low adhesion region 72a, and a low adhesion region 72b (FIG. 2 ( See C).

    The light absorber only needs to be contained in a substance having low adhesion, and the existing state may be dissolved or may be dispersed as particles. When the light absorber is included in a dispersed manner, it is necessary to use particles having a size smaller than that of the processing region as the light absorber. This is because the energy radiated from the particles acts on surrounding materials, and the minimum value of the processing region is determined by the size of the particles. In addition, the shape of the light absorber to be dispersed may be any shape such as granular, columnar, needle-like, plate-like, and at least one of the substances forming the surface of the plurality of objects aggregates, An aggregate may be formed as a single body.

  32 shows an example in which exposure is performed by irradiating a laser beam from the front surface side of the substrate. However, the optical system and the substrate moving mechanism are appropriately changed to irradiate the laser beam from the back surface side of the substrate. Alternatively, a laser beam drawing apparatus that performs exposure may be used.

    An example in which exposure is performed from the back side of the substrate and the formation region is modified will be described with reference to FIG. A mask 62 is formed over the substrate 60 using a light-transmitting substrate 60 (see FIG. 3A). Since the mask 62 functions as a mask that blocks irradiated light, it is necessary to use a material that does not easily transmit the irradiated light.

  As used in FIG. 2, a light absorber may be added to the substance 65 having low adhesion. The substance 65 with low adhesion is discharged as droplets from the discharge device 64 onto the substrate 60 to form a composition 61 with low adhesion (see FIG. 3B).

  The composition 61 having low adhesion is irradiated with light 69 from the light source 66 through the substrate 60 (see FIG. 3C). In the example of FIG. 3, a lamp light source is used as the light source. Since the light 69 is blocked by the mask 62 in the formation region of the mask 62, the surface of the composition having low adhesion on the mask 62 is not processed. Therefore, a high adhesion region 67a and a high adhesion region 67b, which are regions having high adhesion, are formed, and regions having different adhesion are formed in the vicinity of the formation region. Therefore, the non-processed area has a relatively low adhesion and becomes a low adhesion area 68.

  Through the above steps, a plurality of regions having different adhesion are formed in the vicinity of the formation region of the formed material (see FIG. 1A).

    A droplet 74 containing a material to be formed is discharged from a nozzle of a droplet discharge device 73 to a high adhesion region 71 that is a formation region. The discharged droplet 74 is attached to and formed on a part of the high adhesion region 71, the low adhesion region 72a, and the low adhesion region 72b (see FIG. 1B). Baking, drying, etc. are performed, and the formed product 75 is formed across three regions having different adhesion properties. The formed product 75b is formed on the high adhesion region 71, and the formed product 75a is formed on the low adhesion region 72a. A formed product 75c is formed in each of the active regions 72b. A dotted line between the formed product 75a, the formed product 75b, and the formed product 75c is a boundary between the treatment region and the non-treatment region by light irradiation in the formation region, and represents the boundary line. An adhesion force 77a, an adhesion force 77b, and an adhesion force 77c act between each region and the formed product, depending on the adhesion. The adhesion shown in FIG. 1B is represented by an arrow so that the force generated there can be intuitively understood. Since the high adhesion region 71 is modified so as to increase the adhesion, the adhesion with the formed product 75b is high and the adhesion 77b is also large. On the other hand, the low adhesion region 72a. Since the low adhesion region 72b is not modified, the adhesion to the formed product 75a and the formed product 75c is low, and the adhesion force 77a and the adhesion force 77c are also small.

    A substance 76 having an adhesive surface is adhered to the formation 75, and the formation 75a and the formation 75b are removed so as to be peeled off (see FIG. 1C). The formed product 75b formed in the high adhesion region 71 remains on the substrate 50 because the adhesion force 77b is larger than the adhesion force to the substance 76 having the adhesion surface. On the other hand, the formed product 75a and the formed product 75c formed in the low adhesion region 72a and the low adhesion region 72b have a smaller adhesion force than the adhesion force 77a and the adhesion force 77c to the substance 76 having an adhesion surface. The substance adheres to the substance 76 having the above and is removed from the substrate 50. Thus, the force used for the removal needs to be larger than the adhesion between the formation to be removed as an unnecessary part and the formation region, and smaller than the adhesion between the region to be left as a formation. Unnecessary portions can be selectively removed so that a formed product can be obtained in a desired pattern.

    In this embodiment mode, a composition including a conductive material is used as a composition including a material to be formed, and a conductive layer is formed as the formation. The conductive layer thus obtained can be formed with high controllability and fineness, and a finely patterned wiring board can be manufactured. In addition, if a composition containing an insulating material is used as the composition containing the material to be formed, an insulating layer such as an interlayer insulating layer that is similarly finely patterned can be formed, and if used as a mask layer, a high-definition mask can be formed. Can be used for patterning.

    The removing means that can be used in the present invention will be described with reference to FIG. The removing means 91 has a roller shape, and a side surface in contact with the substrate is an adhesive surface 92 having an adhesive (adhesive) having a removing ability. The adhesive may be formed directly on the removing means 91 itself, or may be installed on the removing means 91 with an adhesive formed on a flexible material such as paper, film, or tape. Good. When a substance such as paper, film, or tape has an adhesive surface as a medium, a substance having an adhesive surface having a removal ability before new use for each medium such as paper having an adhesive surface whose used removal ability has been lost. And can be exchanged easily. Of course, the adhesive surface can be used repeatedly by washing and cleaning. The adhesive is not particularly limited as long as a suitable adhesive strength can be obtained, and the storage form may be solvent-based, water-based, or hot-melt type, and the material is rubber-based, acrylate ester or methacrylic acid. Acrylic or silicone-based materials mainly composed of acrylic polymers such as esters can be used. There is no limitation on the substance having an adhesive surface on which an adhesive is formed, and it may be a conductive material or an insulating material. The removing means 91 is scanned in the direction of the arrow 96 to scan the substrate. At this time, the substrate 90 may also be scanned in the direction of the arrow 97, and may be scanned under control relative to the removing means 91. The removing means 91 can also scan in the direction indicated by the arrow 98, and can control the strength and direction of the pressure when adhering to the formed product 93. Moreover, the shape of the formed product after peeling may be different depending on the peeling method for unnecessary portions, for example, the peeling direction. The peeling method and the removing means may be selected depending on the shape, such as the material and size of the formed product. Depending on the removal method, the same material and the product formed in the same process can be formed and shaped into different shapes.

    An example of the shape of the formed product will be described with reference to FIG. As shown in FIG. 35A, a high-adhesion region 205 that has been subjected to a modification treatment on a formed product, a low-adhesion region 204a that is a non-treatment region, and a low-adhesion region 204b are formed on a substrate 203. Has been. Due to the adhesive force of the substance 202 having an adhesive surface, the formation 201 adheres to the substance having an adhesive surface and is peeled from the substrate 203. The formed product 200 remaining on the substrate 203 becomes a formed product 200 having a tapered shape as shown in FIG.

    As shown in FIG. 35B, the formed material 211 adheres to the substance having an adhesive surface and is peeled off from the substrate 203 by the adhesive force of the substance 212 having an adhesive surface. The formation 211 to be removed is a part of the formation on the low adhesion region 204 a and the low adhesion region 204 b and part of the formation on the high adhesion region 205, and the formation 210 remaining on the substrate 203 is As shown in FIG. 35B, the formed product 210 has a smaller film thickness than the originally formed product.

    As shown in FIG. 35C, the formed material 221 adheres to the substance having an adhesive surface and is peeled from the substrate 203 by the adhesive force of the substance 222 having an adhesive surface. The formation 221 to be removed is a part of the formation on the low adhesion region 204 a and the low adhesion region 204 b and part of the formation on the high adhesion region 205, and the formation 220 remaining on the substrate 203 is As shown in FIG. 35C, a formed product 220 having a concave portion such as a depression is obtained. As described above, the shape of the formed product can be changed depending on the adhesive force, peeling force, and peeling method (direction and speed) of the substance used as the removing means.

    The substrate 90 is modified so that only the region to be formed has higher adhesion than the peripheral non-formed region. With respect to the formed product 93 formed in the vicinity of the formation region, the removing means 91 selectively peels off the formed product 95, which is a removed portion formed in the low adhesion region, by bonding it to the bonding surface 92, Remove. Therefore, only the formed product 94 formed on the high adhesion region is formed on the substrate 90 in a desired pattern. In FIG. 4, the removing unit has a roller shape, but is not limited thereto, and the sheet-shaped removing unit may be bonded only to an unnecessary portion to be removed. Further, the adhesive surface may be partially adhered only to the region where the unnecessary portion is desired to be removed, or the removal step may be repeated a plurality of times.

    In the present embodiment, the formed material on the low adhesion region is mechanically removed by a substance having an adhesive surface. However, in addition to peeling by such an adhesive force (adhesive force), it may be removed by suction or air blow. Alternatively, the removal portion may be peeled off and removed so as to be selectively blown off by spraying with an air gun or the like. Moreover, a physical impact may be given and it may carry out combining the removal method mentioned above. Since the present invention removes mechanically unnecessary formations by physical force, it does not produce pollutants such as waste liquid generated by chemical treatment. There is no need to take measures such as installation. Therefore, the process is simplified and the cost is reduced. In addition, as shown in this embodiment mode, a formed product patterned into a desired shape can be accurately obtained with high controllability by a simple process of peeling with a substance having an adhesive surface.

    When the present invention is used, for example, when it is desired to form a fine pattern such as an electrode layer, even if a droplet discharge port is somewhat large and partially formed in a non-formation region, unnecessary portions can be removed. it can. Further, since it is not necessary to control the liquid amount of the droplets by the line width, the film thickness of the wiring can be controlled. When the material surface is modified by laser light irradiation as in this embodiment mode, since the laser light can be processed finely, fine wiring, electrodes, and the like can be formed with high controllability. Further, by combining the droplet discharge method, material loss can be prevented and costs can be reduced as compared with the entire surface coating formation by spin coating method or the like.

    In this embodiment mode, a composition having low adhesion is formed as a pretreatment. However, depending on the formation conditions, the film thickness is extremely thin, and the form may not be maintained as a film. Further, the adhesion may be only on the surface which is in contact with the formed product and is to be retained, and does not necessarily have the same property throughout the film thickness direction.

    After forming the formed product in a desired pattern, a substance that changes the adhesion formed as a pretreatment may be left, or unnecessary portions may be removed after forming the formed product. The removal may be performed by ashing or etching with oxygen or the like. The formed product can also be used as a mask.

As an example of a composition of a solution that is a treatment product forming a low adhesion region, a silane coupling agent represented by a chemical formula of R _n —Si—X _(4-n) (n = 1, 2, 3) Is used. Here, R is a substance containing a relatively inert group such as an alkyl group. X is a hydrolyzable group such as halogen, methoxy group, ethoxy group or acetoxy group, which can be bonded by condensation with a hydroxyl group on the substrate surface or adsorbed water.

Further, as a typical example of a silane coupling agent, by using a silane coupling agent having a fluorine having a fluoroalkyl group in R (fluoroalkylsilane (hereinafter also referred to as FAS)), adhesion can be further reduced. it can. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. Typical FAS includes fluoroalkylsilanes such as heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, and trifluoropropyltrimethoxysilane.

  Solvents for the solution forming the low adhesion region include n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, deca A solvent having a low adhesion region such as a solvent having a hydrocarbon such as hydronaphthalene or squalane or tetrahydrofuran is used.

  In addition, as an example of a composition of a solution that forms the low adhesion region, a substance having a fluorocarbon chain (fluororesin) can be used. As fluororesin, polytetrafluoroethylene (PTFE; tetrafluoroethylene resin), perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkyl vinyl ether copolymer resin), perfluoroethylene propene copolymer (PFEP; tetrafluoride) Ethylene-hexafluoropropylene copolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE; tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride (PVDF; vinylidene fluoride resin), polychlorotrifluoroethylene ( PCTFE; trifluorochloroethylene resin), ethylene-chlorotrifluoroethylene copolymer (ECTFE; trifluoroethylene chloride-ethylene copolymer resin), polytetrafluoroethylene-perfluorodioxo Rukoporima (TFE / PDD), polyvinyl fluoride (PVF; a vinyl fluoride resin), or the like can be used.

Alternatively, an organic material that does not form a low-adhesion region (that is, a high-adhesion region) may be used, and a treatment with CF ₄ plasma or the like may be performed later to form the low-adhesion region. For example, a material in which a water-soluble resin such as polyvinyl alcohol (PVA) is mixed with a solvent such as H ₂ O can be used. Moreover, you may use combining PVA and another water-soluble resin. An organic (resin) material (polyimide, acrylic) or a siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Furthermore, even with a material having a low adhesion region, the adhesion can be further reduced by performing plasma treatment or the like.

    As the light absorber, an organic material, an inorganic material, an inorganic material, a substance containing an organic material, or the like can be used. A material having an absorption region at the wavelength may be selected depending on the wavelength of the laser light to be used. It may be a conductive material such as metal or an insulating material such as an organic resin. As the inorganic material, iron, gold, copper, silicon or germanium can be used, and as the organic material, plastic or pigment such as polyimide or acrylic can be used. For example, rhodamine B can be used as the pigment corresponding to a laser wavelength of 532 nm. Coumarins (coumarin 6H, coumarin 102, coumarin 152, coumarin 153, etc.) can be used as pigments having a laser wavelength of 405 nm, such as eosin Y, methyl orange, and rose bengal. Further, as the coloring matter, black carbon black or a black resin of pigment can be used.

    In order to improve the treatment efficiency by light irradiation, a photocatalytic substance may be formed in contact with the substance to be treated. Since the photocatalytic substance has a photocatalytic function, it is activated by the irradiated light, and the reforming treatment efficiency is improved by the energy.

Photocatalytic materials include titanium oxide (TiO _x ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide (ZrO ₂ ), niobium oxide ( Nb ₂ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), tungsten oxide (WO ₃ ) and the like are preferable. These photocatalytic substances can be irradiated with light in the ultraviolet region (wavelength 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity.

    The photocatalytic substance is a sol-gel dip coating method, spin coating method, droplet discharge method, ion plating method, ion beam method, CVD method, sputtering method, RF magnetron sputtering method, plasma spraying method, plasma spraying method, or anode. It can be formed by an oxidation method. The substance may not have continuity as a film depending on the formation method. In the case of a photocatalytic substance made of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting constituent element salts. When the photocatalytic substance is formed by a coating method such as a dip coating method or a spin coating method, it may be fired or dried when it is necessary to remove the solvent. Specifically, heating may be performed at a predetermined temperature (for example, 300 ° C. or higher), and preferably performed in an atmosphere containing oxygen.

  By performing the pretreatment for improving the adhesion of the formed region for forming the formed product to the formed product from the surrounding region, the formed product can be formed into a desired shape. In addition, a fine pattern can be freely designed by fine processing of laser light irradiation. According to the present invention, a formed product can be formed in a desired pattern with good controllability. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

(Embodiment 2)
Embodiments of the present invention will be described with reference to FIGS. 5 to 12, FIG. 15 and FIG. More specifically, a method for manufacturing a display device having a channel-etched thin film transistor to which the present invention is applied will be described. 5A to 11B are top views of the display device pixel portion, and FIGS. 5A to 11B are cross-sectional views taken along line A-C in FIGS. 5A to 11A. FIG. 6 is a sectional view taken along line BD.

  FIG. 33A is a top view illustrating a structure of a display panel according to the present invention, in which a pixel portion 2701 in which pixels 2702 are arranged in a matrix over a substrate 2700 having an insulating surface, a scanning line side input terminal 2703, a signal A line side input terminal 2704 is formed. The number of pixels may be provided in accordance with various standards. For XGA, 1024 × 768 × 3 (RGB), for UXGA, 1600 × 1200 × 3 (RGB), and for full specification high vision, 1920 × 1080. X3 (RGB) may be used.

  The pixels 2702 are arranged in a matrix by a scan line extending from the scan line side input terminal 2703 and a signal line extending from the signal line side input terminal 2704 intersecting. Each of the pixels 2702 includes a switching element and a pixel electrode connected to the switching element. A typical example of the switching element is a TFT. By connecting the gate electrode side of the TFT to a scanning line and the source or drain side to a signal line, each pixel can be controlled independently by a signal input from the outside. Yes.

  A TFT includes a semiconductor layer, a gate insulating layer, and a gate electrode layer as main components, and a wiring layer connected to a source region and a drain region formed in the semiconductor layer is attached to the TFT. Structurally, the top gate type in which the semiconductor layer, the gate insulating layer and the gate electrode layer are arranged from the substrate side, and the bottom gate type in which the gate electrode layer, the gate insulating layer and the semiconductor layer are arranged from the substrate side are representative. In the present invention, any of those structures may be used.

  FIG. 33A shows a structure of a display panel in which signals input to the scanning lines and the signal lines are controlled by an external driver circuit. As shown in FIG. The driver IC 2751 may be mounted on the substrate 2700 by the Glass method. As another mounting mode, a TAB (Tape Automated Bonding) method as shown in FIG. 15B may be used. The driver IC may be formed on a single crystal semiconductor substrate or may be a circuit in which a TFT is formed on a glass substrate. In FIG. 15, the driver IC 2751 is connected to an FPC (Flexible printed circuit) 2750.

  In the case where a TFT provided for a pixel is formed using SAS, a scan line driver circuit 3702 can be formed over the substrate 3700 and integrated as shown in FIG. In FIG. 33B, the pixel portion 3701 is controlled by an external driver circuit as in FIG. 33A connected to the signal line side input terminal 3704. In the case where a TFT provided for a pixel is formed using a polycrystalline (microcrystalline) semiconductor, a single crystal semiconductor, or the like with high mobility, FIG. 33C illustrates a pixel portion 4701, a scan line driver circuit 4702, and a signal line driver circuit. 4704 can be integrally formed on the substrate 4700.

  As the substrate 100, a glass substrate made of barium borosilicate glass, alumino borosilicate glass, or the like, a quartz substrate, a silicon substrate, a metal substrate, a stainless steel substrate, or a plastic substrate having heat resistance that can withstand the processing temperature in this manufacturing process is used. Further, polishing may be performed by a CMP method or the like so that the surface of the substrate 100 is planarized. Note that an insulating layer may be formed over the substrate 100. The insulating layer is formed as a single layer or a stacked layer using an oxide material or a nitride material containing silicon by a known method such as a CVD method, a plasma CVD method, a sputtering method, or a spin coating method. This insulating layer may not be formed, but has an effect of blocking contaminants from the substrate 100. In the case of forming a base layer for preventing contamination from the glass substrate, a plurality of regions (high adhesion region and low adhesion region) having different adhesion are formed thereon.

    As a pretreatment, the formation area of the formed product is modified by comparing with the surrounding area. In this embodiment mode, a substance having low adhesion is formed, and the adhesion is selectively changed by light irradiation treatment, so that a high adhesion region and a low adhesion region are formed. The difference in adhesion is a difference in adhesion force (adhesion force of the formed product) acting on the formed product and its forming region. In order to improve the light irradiation processing efficiency, a light absorber having an absorption region at the wavelength of the laser light to be irradiated may be added (mixed) to the processed object.

  A low-adhesion composition 101 including a substance with low adhesion is formed over the substrate 100 (see FIG. 5).

As an example of the composition of the solution that forms the low adhesion region, a silane coupling agent represented by a chemical formula of R _n —Si—X _(4-n) (n = 1, 2, 3) is used. Here, R is a substance containing a relatively inert group such as an alkyl group. X is a hydrolyzable group such as halogen, methoxy group, ethoxy group or acetoxy group, which can be bonded by condensation with a hydroxyl group on the substrate surface or adsorbed water.

Further, as a typical example of a silane coupling agent, by using a silane coupling agent having a fluorine having a fluoroalkyl group in R (fluoroalkylsilane (hereinafter also referred to as FAS)), adhesion can be further reduced. it can. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. Typical FAS includes fluoroalkylsilanes such as heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, and trifluoropropyltrimethoxysilane.

  Solvents for the solution forming the low adhesion region include n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, deca A solvent having a low adhesion surface such as a solvent having a hydrocarbon such as hydronaphthalene or squalane or tetrahydrofuran is used.

  In addition, as an example of a composition of a solution that forms a low adhesion region, a material (fluororesin) having a fluorocarbon chain can be used. As fluororesin, polytetrafluoroethylene (PTFE; tetrafluoroethylene resin), perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkyl vinyl ether copolymer resin), perfluoroethylene propene copolymer (PFEP; tetrafluoride) Ethylene-hexafluoropropylene copolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE; tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride (PVDF; vinylidene fluoride resin), polychlorotrifluoroethylene ( PCTFE; trifluorochloroethylene resin), ethylene-chlorotrifluoroethylene copolymer (ECTFE; trifluoroethylene chloride-ethylene copolymer resin), polytetrafluoroethylene-perfluorodioxo Rukoporima (TFE / PDD), polyvinyl fluoride (PVF; a vinyl fluoride resin), or the like can be used.

Alternatively, an organic material that does not exhibit a low adhesion region (that is, a high adhesion region) may be used, and a treatment with CF ₄ plasma or the like may be performed later to form the low adhesion region. For example, a material in which a water-soluble resin such as polyvinyl alcohol (PVA) is mixed with a solvent such as H ₂ O can be used. Moreover, you may use combining PVA and another water-soluble resin. An organic (resin) material (polyimide, acrylic) or a siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Furthermore, even with a material having a low adhesion surface, the adhesion can be further reduced by performing plasma treatment or the like.

  In this embodiment mode, FAS is used as a substance having low adhesion. This adhesion is to the gate electrode layer formed in a later step. In this embodiment mode, the entire surface is applied by a spin coating method, but may be selectively formed in the vicinity of a formation region of the gate electrode layer by a droplet discharge method or the like. In this case, wasteful materials can be reduced, so that material utilization efficiency is improved.

  Next, the region where the gate electrode layer is to be formed is irradiated with laser light 171a and laser light 171b by a laser irradiation apparatus, and a substance with low adhesion in the irradiation region is decomposed to improve adhesion. In this embodiment mode, laser light that can be precisely processed is used as light to be processed. In this embodiment mode, since FAS is used as a substance having low adhesion, light with a wavelength of 200 nm or less that decomposes FAS is irradiated. However, as described above, when a substance having a function of improving the light processing efficiency, such as a light absorber or a photocatalyst substance, is added to the treatment substance, it may be appropriately set in consideration of the absorption wavelength of the substance to be added. . By this laser light irradiation treatment, the irradiated regions become a high-adhesion region 102a and a high-adhesion region 102b that have relatively high adhesion compared to the surroundings (see FIG. 6).

  When a light absorber or a photocatalytic substance is added to a composition having low adhesion, the light absorber may be removed by washing with alcohol or water after forming regions having different adhesion. In order to remove only the light absorber, it is necessary to select a solvent having a high selection ratio so that a substance having low adhesion does not dissolve. In the case of a dual emission type or downward emission type light emitting display device that extracts light from the substrate 100 or a transmissive liquid crystal display device, it is preferable to remove the light absorber because the light extraction efficiency may decrease. . In the case of a wiring board, an upward emission type light emitting display device, a reflection type liquid crystal display device, or the like, it is not always necessary to remove the light absorber.

    A composition containing a conductive material is discharged from the droplet discharge device 180a and the droplet discharge device 180b in the vicinity of the high-adhesion region 102a and the high-adhesion region 102b, which are formation regions, and the conductive layer 190 and the conductive layer 191 are discharged. (See FIG. 7). Although the conductive layer 190 and the conductive layer 191 are also formed in a part of the design non-formation region, since the non-formation region is a low adhesion region, an unnecessary part can be removed by a subsequent process. Therefore, not only the desired line width but also the film thickness can be controlled at the same time, and the problem that the desired film thickness cannot be obtained is solved by controlling the liquid amount for forming the fine line. In addition, when the size of the discharge port of the nozzle from which droplets are discharged is larger than the desired size to be formed, and when it is desired to increase the throughput by selecting a wide discharge region, it is possible to form in a desired pattern. The desired formation can be formed.

    A material 195 having an adhesive surface on which an adhesive is formed is bonded to the formed conductive layer 190 and the conductive layer 191 so that the adhesive surfaces are attached to each other. After the bonding, the substance 195 having an adhesive surface is peeled off, and the conductive layer 193 and the conductive layer 194 which are unnecessary portions formed on the low adhesion region in the conductive layer 190 and the conductive layer 191 are removed from the substrate 100. The conductive layer on the high adhesion region 102a and the high adhesion region 102b whose adhesion is improved by the modification treatment with light has high adhesion to the formation region on the substrate, and thus is peeled off by the substance 195 having an adhesion surface. Instead, it remains on the substrate 100. Accordingly, the gate electrode layer 103 and the gate electrode layer 104 which are patterned into a desired shape are formed (see FIG. 8). The width of the gate electrode layer in the channel direction by thinning is preferably 10 μm or less, preferably 5 μm or less.

  When the material is modified by laser light irradiation as in this embodiment mode, the laser light can be finely processed, so that fine wirings, electrodes, and the like can be formed with high controllability. Further, by combining the droplet discharge method, material loss can be prevented and costs can be reduced as compared with the entire surface coating formation by spin coating method or the like.

  In addition, in order to improve adhesion to a formed product by a droplet discharge method as a pretreatment, a substance of an organic material that functions as an adhesive or a base film such as titanium oxide may be formed. In this case, a process for forming regions having different adhesion may be performed on this substance. An organic (resin) material (polyimide, acrylic) or a siloxane resin may be used.

    The conductive layer 190 and the conductive layer 191 are formed using a droplet discharge unit. The droplet discharge means is a general term for a device having means for discharging droplets such as a nozzle having a composition discharge port and a head having one or a plurality of nozzles. The diameter of the nozzle provided in the droplet discharge means is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 0). .1pl or more and 40pl or less, more preferably 10pl or less). The discharge amount increases in proportion to the size of the nozzle diameter. In addition, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, preferably about 0.1 to 3 mm (preferably about 1 mm or less). Set.

  A composition in which a conductive material is dissolved or dispersed in a solvent is used as the composition discharged from the discharge port. Examples of the conductive material include metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd and Zn, Fe, Ti, Si, Ge, Zr, and Ba. It corresponds to oxide, silver halide fine particles or dispersible nanoparticles. Further, it corresponds to indium tin oxide (ITO) used as a transparent conductive film, ITSO composed of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, and the like. As the conductive material, particles of a single element or plural kinds of elements can be used. However, it is preferable to use a composition in which any of gold, silver and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or nickel boron (NiB) can be used.

  Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone are used. The viscosity of the composition is preferably 20 mPa · s (cp) or less, in order to prevent the drying from occurring or to smoothly discharge the composition from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, the viscosity of a composition in which ITO, organic indium, or organic tin is dissolved or dispersed in a solvent is 5 to 20 mPa · s, the viscosity of a composition in which silver is dissolved or dispersed in a solvent is 5 to 20 mPa · s, The viscosity of the composition in which gold is dissolved or dispersed in a solvent is preferably set to 5 to 20 mPa · s.

  The conductive layer may be a stack of a plurality of conductive materials. Alternatively, first, silver may be used as a conductive material, and a conductive layer may be formed by a droplet discharge method, followed by plating with copper or the like. Plating may be performed by electroplating or chemical (electroless) plating. For plating, the substrate surface may be immersed in a container filled with a solution having a plating material, but the substrate is placed at an angle (or vertically) so that the solution having the material to be plated flows on the substrate surface. It may be applied. When plating is performed so that the solution is applied while standing the substrate, there is an advantage that the process apparatus is reduced in size.

  Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. 1 μm or less is preferable. The composition is formed by a known method such as an electrolytic method, an atomizing method, or a wet reduction method, and its particle size is generally about 0.01 to 10 μm. However, when formed by a gas evaporation method, the nanoparticles protected by the dispersant are as fine as about 7 nm, and these nanoparticles are aggregated in the solvent when the surface of each particle is covered with a coating agent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

    Further, the step of discharging the composition may be performed under reduced pressure, and it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductive layer. After discharging the composition, one or both steps of drying and baking are performed. The drying and firing steps are both heat treatment steps. For example, drying is performed at 100 degrees for 3 minutes, and firing is performed at 200 to 350 degrees for 15 minutes to 60 minutes. Time is different. The drying process and the firing process are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. Note that the timing of performing this heat treatment and the number of heat treatments are not particularly limited. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate or the like, but is generally 100 to 800 degrees (preferably 200). ~ 350 degrees). By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and contracted to bring the nanoparticles into contact with each other, thereby accelerating fusion and fusion.

Irradiation with a laser beam used in the drying or baking process may be performed using a continuous wave or pulsed gas laser or solid state laser. Examples of the former gas laser include an excimer laser, a He—Cd laser, and an Ar laser. As the latter solid-state laser, crystals such as YAG, YVO ₄ , and GdVO ₄ doped with Cr, Nd, and the like are used. A laser etc. are mentioned. Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. In addition, a so-called hybrid laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate 100, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds so as not to destroy the substrate 100. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that irradiates ultraviolet light or infrared light in an inert gas atmosphere, and rapidly raises the temperature for several minutes to several microseconds. This is done by applying heat instantaneously. Since this treatment is performed instantaneously, only the outermost thin film can be heated substantially without affecting the lower layer film. That is, it does not affect a substrate having low heat resistance such as a plastic substrate.

  In addition, after forming the composition, the gate electrode layer 103 and the gate electrode layer 104 may be flattened by pressing the surface with pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-like object on the surface, or the surface may be pressed vertically with a flat plate-like object. A heating step may be performed when pressing. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method.

  Next, the gate insulating layer 106 is formed over the gate electrode layer 103 and the gate electrode layer 104 (see FIG. 9). The gate insulating layer 106 may be formed of a known material such as a silicon oxide material or a nitride material, and may be a stacked layer or a single layer. In this embodiment, a stacked layer of a silicon nitride film, a silicon oxide film, and a silicon nitride film is used. Alternatively, a single layer or a double layer of silicon oxynitride film may be used. A silicon nitride film having a dense film quality is preferably used. In addition, when silver or copper is used for a conductive layer formed by a droplet discharge method, if a silicon nitride film or a NiB film is formed thereon as a barrier film, diffusion of impurities can be prevented and the surface can be planarized. is there. Note that in order to form a dense insulating film with low gate leakage current at a low deposition temperature, a rare gas element such as argon is preferably contained in a reaction gas and mixed into the formed insulating film.

Next, a semiconductor layer is formed. A semiconductor layer having one conductivity type may be formed as necessary. In this embodiment, an N-type semiconductor layer 109 and an N-type semiconductor layer 110 are stacked as semiconductor layers 107 and 108 and a semiconductor layer having one conductivity type (see FIG. 9). In addition, an N-type semiconductor layer is formed, and an NMOS structure of an N-channel TFT, a PMOS structure of a P-channel TFT having a P-type semiconductor layer, and a CMOS structure of an N-channel TFT and a P-channel TFT are manufactured. it can. In order to impart conductivity, an element imparting conductivity is added by doping, and an impurity region is formed in the semiconductor layer, whereby an N-channel TFT or a P-channel TFT can be formed. Instead of forming the N-type semiconductor layer, conductivity may be imparted to the semiconductor layer by performing plasma treatment with a PH ₃ gas.

  As a material for forming the semiconductor layer, an amorphous semiconductor (hereinafter also referred to as “AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor crystallized using energy or thermal energy, a semi-amorphous (also referred to as microcrystal or microcrystal, hereinafter, also referred to as “SAS”) semiconductor, or the like can be used. The semiconductor layer can be formed by a known means (such as sputtering, LPCVD, or plasma CVD).

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is the main component, the Raman spectrum shifts to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. As a neutralizing agent for dangling bonds, hydrogen or halogen is contained at least 1 atomic% or more. The SAS is formed by glow discharge decomposition (plasma CVD) of a silicide gas. As the silicide gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4, and the} like can be used. Further, F ₂ and GeF ₄ may be mixed. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times, the pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or lower, and can be formed even at a substrate heating temperature of 100 to 200 ° C. Here, as an impurity element mainly taken in at the time of film formation, it is desirable that impurities derived from atmospheric components such as oxygen, nitrogen, and carbon be 1 × 10 ²⁰ cm ⁻³ or less, and in particular, the oxygen concentration is 5 × 10 5. It is preferable to be ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or less. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. Further, a SAS layer formed from a silicide gas containing hydrogen may be stacked on a SAS layer formed from a silicide gas containing fluorine as a semiconductor layer.

    A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or higher as a main material, or polysilicon formed at a process temperature of 600 ° C. or lower. And so-called low-temperature polysilicon, and polysilicon crystallized by adding an element that promotes crystallization. Of course, as described above, a semi-amorphous semiconductor or a semiconductor including a crystal phase in a part of the semiconductor layer can also be used.

In the case where a crystalline semiconductor layer is used for the semiconductor layer, a method for manufacturing the crystalline semiconductor layer can be a known method (laser crystallization method, thermal crystallization method, or heat using an element that promotes crystallization such as nickel. A crystallization method or the like may be used. In addition, a microcrystalline semiconductor that is a SAS can be crystallized by laser irradiation to improve crystallinity. In the case where an element for promoting crystallization is not introduced, the amorphous silicon film is heated at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous silicon film with laser light, whereby the concentration of hydrogen contained in the amorphous silicon film is set to 1 ×. Release to 10 ²⁰ atoms / cm ³ or less. This is because the amorphous silicon film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

  The method of introducing the metal element into the amorphous semiconductor layer is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor layer or inside the amorphous semiconductor layer. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor layer and to spread the aqueous solution over the entire surface of the amorphous semiconductor layer, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

  The crystallization of the amorphous semiconductor layer may be a combination of heat treatment and crystallization by laser light irradiation, or may be performed multiple times by heat treatment or laser light irradiation alone.

    Alternatively, the crystalline semiconductor layer may be directly formed over the substrate by a plasma method. Alternatively, the crystalline semiconductor layer may be selectively formed over the substrate by a plasma method.

    As a semiconductor, an organic semiconductor material can be used and formed by a printing method, a spray method, a spin coating method, a droplet discharge method, or the like. In this case, the number of processes can be reduced because the etching process is not necessary. As the organic semiconductor, a low molecular material, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, a soluble polymer material such as polythiophene, polyfluorene, poly (3-alkylthiophene), a polythiophene derivative, or pentacene can be used.

    In addition, as an organic semiconductor material that can be used in the present invention, there is a material that can form a first semiconductor region by processing after forming a soluble precursor. Examples of such an organic semiconductor material include polythienylene vinylene, poly (2,5-thienylene vinylene), polyacetylene, a polyacetylene derivative, and polyarylene vinylene.

    When converting the precursor into an organic semiconductor, a reaction catalyst such as hydrogen chloride gas is added as well as heat treatment. Typical solvents for dissolving these soluble organic semiconductor materials include toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butyl cellosolve, cyclohexane, NMP (N-methyl-2 -Pyrrolidone), cyclohexanone, 2-butanone, dioxane, dimethylformamide (DMF), THF (tetrahydrofuran), or the like can be applied.

    In this embodiment mode, an amorphous semiconductor is used as the semiconductor. A semiconductor layer is formed, and then an N-type semiconductor layer is formed as a semiconductor layer having one conductivity type by a plasma CVD method or the like.

    Subsequently, the semiconductor layer and the N-type semiconductor layer are simultaneously patterned using a mask made of an insulator such as resist or polyimide, and the semiconductor layer 107, the semiconductor layer 108, the N-type semiconductor layer 109, and the N-type semiconductor layer 110 are formed. (See FIG. 9). The mask can be formed by selectively discharging a composition. For the mask, a resin material such as an epoxy resin, an acrylic resin, a phenol resin, a novolac resin, a melamine resin, or a urethane resin is used. Also, using organic materials such as benzocyclobutene, parylene, flare, permeable polyimide, compound materials made by polymerization of siloxane polymers, composition materials containing water-soluble homopolymers and water-soluble copolymers, etc. It is formed by a droplet discharge method. Alternatively, a commercially available resist material containing a photosensitizer may be used. For example, a novolak resin that is a typical positive resist and a naphthoquinonediazide compound that is a photosensitizer, a base resin that is a negative resist, diphenylsilanediol, and An acid generator or the like may be used. Whichever material is used, the surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant or the like.

  Further, in this embodiment mode, when the mask is formed by a droplet discharge method, as a pretreatment, a process of forming a region having different adhesion in the vicinity of a formation region may be performed. In the present invention, when a mask is formed by discharging droplets by the droplet discharge method, a low-adhesion region and a high-adhesion region can be formed in a mask formation region, and the shape of the mask can be controlled. By this treatment, the non-formation region has a low adhesion, so that unnecessary portions can be removed mechanically and the mask layer can be formed with good controllability. This step can be applied as a pretreatment for patterning any formed product when the droplet discharge method is used.

Again, a mask made of an insulator such as resist or polyimide is formed by a droplet discharge method, and a through-hole 145 is formed in a part of the gate insulating layer 106 by etching using the mask, and a lower layer thereof is formed. A part of the gate electrode layer 104 disposed on the side is exposed. The etching process may be either plasma etching (dry etching) or wet etching, but plasma etching is suitable for processing a large area substrate. As an etching gas, a gas containing fluorine such as CF ₄ , NF ₃ , Cl ₂ , or BCl ₃ or a gas containing chlorine may be used, and an inert gas such as He or Ar may be added as appropriate. Further, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

  After the mask is removed, a composition containing a conductive material is discharged, and the source or drain electrode layer 111, the source or drain electrode layer 112, the source or drain electrode layer 113, the source or drain electrode layer 113 are discharged. The electrode layer 114 is formed, and the semiconductor layer 107 and the semiconductor are formed using the source / drain electrode layer 111, the source / drain electrode layer 112, the source / drain electrode layer 113, and the source / drain electrode layer 114 as a mask. The layer 108, the N-type semiconductor layer 109, and the N-type semiconductor layer 110 are patterned to expose the semiconductor layer 107 and the semiconductor layer 108 (see FIG. 10). The source or drain electrode layer 111 also functions as a source or drain wiring layer, and the source or drain electrode layer 113 also functions as a power supply line.

  The steps of forming the source or drain electrode layer 111, the source or drain electrode layer 112, the source or drain electrode layer 113, and the source or drain electrode layer 114 also include the gate electrode layer 103 and the gate electrode described above. It can be formed in the same manner as when the layer 104 is formed. Therefore, a pretreatment for forming the low adhesion region and the high adhesion region may be performed, and unnecessary portions may be mechanically removed to perform delicate patterning.

  As a conductive material for forming the source or drain electrode layer 111, the source or drain electrode layer 112, the source or drain electrode layer 113, and the source or drain electrode layer 114, Ag (silver), Au A composition mainly composed of metal particles such as (gold), Cu (copper), W (tungsten), and Al (aluminum) can be used. Further, light-transmitting indium tin oxide (ITO), ITSO made of indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like may be combined.

  In the through-hole 145 formed in the gate insulating layer 106, the source or drain electrode layer 112 and the gate electrode layer 104 are electrically connected. A part of the source electrode layer or the drain electrode layer forms a capacitor element.

  The step of forming the through-hole 145 in part of the gate insulating layer 106 includes a source or drain electrode layer 111, a source or drain electrode layer 112, a source or drain electrode layer 113, a source or drain electrode layer After the formation of the layer 114, the through-hole 145 is formed using the source or drain electrode layer 111, the source or drain electrode layer 112, the source or drain electrode layer 113, and the source or drain electrode layer 114 as a mask. May be. Then, a conductive layer is formed in the through hole 145, and the source or drain electrode layer 112 and the gate electrode layer 104 are electrically connected. In this case, there is an advantage that the process is simplified.

Next, a first electrode layer 117 is formed by selectively discharging a composition containing a conductive material over the gate insulating layer 106 (see FIG. 11). Of course, when the first electrode layer 117 is formed, as in the case of forming the gate electrode layer 103 and the gate electrode layer 104, a pretreatment for forming a low adhesion region and a high adhesion region is performed, and unnecessary portions are removed. It may be removed mechanically and delicate patterning may be performed. The first electrode layer 117 can be selectively formed with better controllability by discharging a composition containing a conductive material to the high adhesion region. The first electrode layer 117 is formed of indium tin oxide (ITO) or indium tin oxide containing silicon oxide (ITSO) when light is emitted from the substrate 100 side or when a transmissive display panel is manufactured. Indium zinc oxide (IZO) containing zinc oxide (ZnO), zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide (SnO ₂ ), etc. You may form in a predetermined pattern and form by baking.

    Further, it is preferably formed of indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), or the like by a sputtering method. More preferably, indium tin oxide containing silicon oxide is used by a sputtering method using a target containing 2 to 10% by weight of silicon oxide in ITO. In addition, indium zinc oxide (IZO (IZO), which is a conductive material obtained by doping ZnO with gallium (Ga), and an oxide conductive material containing silicon oxide and indium oxide mixed with 2 to 20% zinc oxide (ZnO). indium zinc oxide)) may be used. After the first electrode layer 117 is formed by a sputtering method, a mask layer may be formed by a droplet discharge method and formed into a desired pattern by etching. In this embodiment mode, the first electrode layer 117 is formed using a light-transmitting conductive material by a droplet discharge method, and specifically includes indium tin oxide, ITO, and silicon oxide. It is formed using ITSO.

  In this embodiment mode, the example in which the gate insulating layer is a three-layer structure including a silicon nitride film made of silicon nitride, a silicon oxynitride film (silicon oxide film), and a silicon nitride film has been described above. As a preferable structure, the first electrode layer 117 formed of indium tin oxide containing silicon oxide is formed in close contact with the insulating layer made of silicon nitride included in the gate insulating layer 106, thereby emitting light in the electroluminescent layer. The effect that the ratio of the emitted light to the outside can be increased can be exhibited. Further, the gate insulating layer is interposed between the gate electrode layer and the first electrode layer, and can function as a capacitor.

    The first electrode layer 117 can also be selectively formed over the gate insulating layer 106 before the source or drain electrode layer 114 is formed. In this case, in this embodiment mode, the connection structure of the source or drain electrode layer 114 and the first electrode layer 117 is a structure in which the source or drain electrode layer 114 is stacked on the first electrode layer. It becomes. When the first electrode layer 117 is formed before the source electrode layer or the drain electrode layer 114, the first electrode layer 117 can be formed in a flat formation region. Therefore, the first electrode layer 117 can be formed in a flat region. It can be formed well.

    Alternatively, an insulating layer serving as an interlayer insulating layer may be formed over the source or drain electrode layer 114 and electrically connected to the first electrode layer 117 with a wiring layer. In this case, the present invention can be used to form the opening. With respect to the insulating layer to be formed, only the region where the opening is formed is used as a low adhesion region, and the other region is used as a high adhesion region, and an insulating layer is formed. After that, if only the insulating layer on the low adhesion region is removed by mechanical means such as peeling, an opening is formed in the removal region. Thereafter, the substance formed to reduce the adhesion formed in the opening is removed.

    Further, instead of forming the opening (contact hole) by removing the insulating layer, a method of selectively forming the insulating layer may be used. In this case, a substance having low wettability with respect to the insulating layer is formed over the source or drain electrode layer 114. After that, when a composition including an insulating layer is applied by a coating method or the like, an insulating layer is formed in a region excluding a region where a substance having low wettability is formed. After the insulating layer is solidified by heating, drying, or the like, a substance with low wettability is removed to form an opening.

    A wiring layer is formed so as to fill the opening formed by the above-described method, and a first electrode layer 117 is formed so as to be in contact with the wiring layer. When this method is used, there is an effect of simplifying the process because it is not necessary to form an opening by etching.

    In addition, when a structure in which emitted light is emitted to the side opposite to the substrate 100 side, in the case of manufacturing a reflective EL display panel, Ag (silver), Au (gold), Cu (copper)), A composition composed mainly of metal particles such as W (tungsten) and Al (aluminum) can be used. As another method, a transparent conductive film or a light reflective conductive film is formed by a sputtering method, a mask pattern is formed by a droplet discharge method, and the first electrode layer 117 is formed by combining etching processes. Also good.

    The first electrode layer 117 may be wiped and polished with a porous material such as CMP or polyvinyl alcohol so that the surface thereof is planarized. Further, after the polishing using the CMP method, the surface of the first electrode layer 117 may be subjected to ultraviolet irradiation, oxygen plasma treatment, or the like.

    Through the above steps, a TFT substrate 100 for a display panel in which a bottom gate type (also referred to as an inverted stagger type) TFT and a pixel electrode are connected to the substrate 100 is completed. The TFT of this embodiment mode is a channel etch type.

    Next, an insulating layer 121 (also referred to as a partition wall or a bank) is selectively formed. The insulating layer 121 is formed over the first electrode layer 117 so as to have an opening. In this embodiment mode, the insulating layer 121 is formed over the entire surface, and is etched and patterned with a mask such as a resist. When the insulating layer 121 is formed using a droplet discharge method, a printing method, or the like that can be directly and selectively formed, patterning by etching is not necessarily required. The insulating layer 121 can also be formed in a desired shape by the pretreatment of the present invention.

    The insulating layer 121 is formed using silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or other inorganic insulating materials, or acrylic acid, methacrylic acid, and derivatives thereof, polyimide, aromatic Heat-resistant polymers such as polyamide and polybenzimidazole, or siloxane resins may be used. You may form using photosensitive and non-photosensitive materials, such as an acryl and a polyimide. The insulating layer 121 preferably has a shape in which the radius of curvature continuously changes, and the coverage of the electroluminescent layer 122 and the second electrode layer 123 formed thereon is improved.

    Alternatively, after the insulating layer 121 is formed by discharging a composition by a droplet discharge method, the surface may be pressed and flattened by pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-like object on the surface, or the surface may be pressed vertically with a flat plate-like object. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method. When flatness is improved by this step, display unevenness of the display panel can be prevented and a high-definition image can be displayed.

    A light-emitting element is formed so as to be electrically connected to the thin film transistor (see FIG. 12).

    Before forming the electroluminescent layer 122, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in the first electrode layer 117 and the insulating layer 121 or on the surface thereof. In addition, it is preferable to perform heat treatment at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and to form the electroluminescent layer 122 by vacuum deposition or droplet discharge under reduced pressure without being exposed to the air as it is. .

    As the electroluminescent layer 122, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask or the like. A material that emits red (R), green (G), and blue (B) light can be formed by a droplet discharge method (such as a low-molecular or high-molecular material) in the same manner as a color filter. In this case, a mask is not used. Both are preferable because RGB can be separately applied. A second electrode layer 123 is stacked over the electroluminescent layer 122 to complete a display device having a display function using a light emitting element.

Although not shown, it is effective to provide a passivation film so as to cover the second electrode layer 123. The protective film provided when forming the display device may have a single layer structure or a multilayer structure. As the passivation film, silicon nitride (SiN), silicon oxide (SiO ₂ ), silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), nitrogen content is oxygen It is made of an insulating film containing aluminum nitride oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), or nitrogen-containing carbon film (CN _X ) that is higher than the content, and a single layer or a combination of the insulating films is used. Can do. For example, a laminate structure such as a laminate of a nitrogen-containing carbon film (CN _x ) and silicon nitride (SiN), or an organic material can be used, and a laminate of polymers such as styrene polymer may be used. A siloxane resin may also be used.

At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the electroluminescent layer having low heat resistance. The DLC film is formed by a plasma CVD method (typically, an RF plasma CVD method, a microwave CVD method, an electron cyclotron resonance (ECR) CVD method, a hot filament CVD method, etc.), a combustion flame method, a sputtering method, or an ion beam evaporation method. It can be formed by laser vapor deposition. The reaction gas used for film formation was hydrogen gas and a gas containing hydrocarbon (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.), ionized by glow discharge, and negative self-bias was applied. Films are formed by accelerated collision of ions with the cathode. The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as the reaction gas. The DLC film has a high blocking effect against oxygen and can suppress oxidation of the electroluminescent layer. Therefore, the problem that the electroluminescent layer is oxidized during the subsequent sealing process can be prevented.

  Subsequently, a sealing material is formed and sealed using a sealing substrate. After that, a flexible wiring board may be connected to a gate wiring layer formed by being electrically connected to the gate electrode layer 103 to be electrically connected to the outside. The same applies to the source wiring layer formed by being electrically connected to the source electrode layer or the drain electrode layer 111 which is also the source wiring layer.

  A completed view of an EL display panel manufactured using the present invention is shown in FIG. 18A is a top view of the EL display panel, and FIG. 18B is a cross-sectional view taken along line EF in FIG. 18A. In FIG. 18, a pixel portion 3301 formed over an element substrate 3300 includes a pixel 3302, a gate wiring layer 3306a, a gate wiring layer 3306b, and a source wiring layer 3308, which are attached to each other with a sealing substrate 3310 and a sealant 3303. Combined and fixed. In this embodiment mode, a driver IC 3351 is installed on the FPC 3350 and mounted by the TAB method.

  As shown in FIGS. 18A and 18B, a desiccant 3305, a desiccant 3304a, and a desiccant 3304b are provided in the display panel in order to prevent deterioration of the element due to moisture. The desiccant 3305 is formed so as to surround the periphery of the pixel portion, and the desiccant 3304a and the desiccant 3304b are formed in regions corresponding to the gate wiring layers 3306a and 3306b. In the present embodiment, the desiccant is installed in a recess formed in the sealing substrate as shown in FIG. 18B, and has a structure that does not hinder thinning. Since the desiccant is also formed in the region corresponding to the gate wiring layer, the water absorption area can be increased and the water absorption effect is improved. Further, since the desiccant is formed on the gate wiring layer that does not emit light directly, the light extraction efficiency is not lowered. In this embodiment mode, a filler 3307 is filled in the display panel. When a hygroscopic substance such as a desiccant is used as the filler, a further water absorption effect can be obtained and deterioration of the element can be prevented.

  Note that in this embodiment mode, a case where a light-emitting element is sealed with a glass substrate is shown; however, the sealing process is a process for protecting the light-emitting element from moisture and is mechanically sealed with a cover material. Either a method, a method of encapsulating with a thermosetting resin or an ultraviolet light curable resin, or a method of encapsulating with a thin film having a high barrier ability such as a metal oxide or a nitride is used. As the cover material, glass, ceramics, plastic, or metal can be used. However, when light is emitted to the cover material side, it must be translucent. In addition, the cover material and the substrate on which the light emitting element is formed are bonded together using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a sealed space. Form. It is also effective to provide a hygroscopic material typified by barium oxide in this sealed space. This hygroscopic material may be provided in contact with the sealing material, or may be provided on the partition wall or in the peripheral portion so as not to block light from the light emitting element. Further, the space between the cover material and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet light curable resin. In this case, it is effective to add a moisture absorbing material typified by barium oxide in the thermosetting resin or the ultraviolet light curable resin.

  In this embodiment mode, the switching TFT has a single gate structure, but a multi-gate structure such as a double gate structure may be used. In the case where a semiconductor is manufactured using a SAS or a crystalline semiconductor, an impurity region can be formed by adding an impurity imparting one conductivity type. In this case, the semiconductor layer may have impurity regions having different concentrations. For example, the vicinity of the channel region of the semiconductor layer and the region stacked with the gate electrode layer may be low-concentration impurity regions, and the outer region may be high-concentration impurity regions.

  As described above, in this embodiment mode, the process can be omitted. In addition, by forming various components (parts) directly on the substrate using the droplet discharge method, a display panel can be easily used even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. Can be manufactured.

  According to the present invention, it is possible to easily form a component constituting a display device with a desired pattern with good controllability. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

(Embodiment 3)
An embodiment of the present invention will be described with reference to FIGS. In this embodiment mode, a display device is manufactured using a top-gate (forward staggered) thin film transistor as a thin film transistor. Note that an example of a liquid crystal display device using a liquid crystal material as a display element is shown. Therefore, repetitive description of the same portion or a portion having a similar function is omitted. 13 and 14 are cross-sectional views of the display device.

    Also in this embodiment, the light irradiation treatment is modified so as to change the adhesion of the irradiation region. A composition with low adhesion including a substance with low adhesion is discharged over the substrate 300 by the discharge device 382 to form a composition 351 with low adhesion (see FIG. 13A). In this embodiment mode, laser light is used as light.

  Both ends of the composition 351 having low adhesion are irradiated with laser light 370a and laser light 370b, so that a high adhesion region 360a and a high adhesion region 360b with high adhesion are formed (see FIG. 13B). When the film is modified by laser beam irradiation as in this embodiment mode, the laser beam can be finely processed, and thus a fine pattern can be formed with good controllability. Further, by combining the droplet discharge method, material loss can be prevented and costs can be reduced as compared with the entire surface coating formation by spin coating method or the like. The low-adhesion region 301 sandwiched between the high-adhesion region 360a and the high-adhesion region 360b is formed by fine processing using laser light, and thus has a thin line shape. In this embodiment mode, the high-adhesion region 360a, the high-adhesion region 360b, and a plurality of regions are irradiated with laser light to thin the low-adhesion region. However, the present invention is not limited to this. Then, the laser light irradiation process may be performed so as to correspond to a desired interval between the wirings, and the adhesion may be controlled. A composition containing a conductive material is discharged from the droplet discharge device 380 across the low adhesion region 301 and straddling the surrounding high adhesion region 360a and high adhesion region 360b. The composition containing the discharged conductive material is dried and baked to form a conductive layer 390 (see FIG. 13C).

    A substance 395 having an adhesive surface on which an adhesive is formed is adhered to the formed conductive layer 390 so that the adhesive surfaces are bonded to each other. After the bonding, the substance 395 having an adhesive surface is peeled off, and the conductive layer 391 that is an unnecessary portion formed over the low adhesion region in the conductive layer 390 is removed from the substrate 300. Since the conductive layer on the high adhesion region 360a and the high adhesion region 360b whose adhesion is improved by the modification treatment with light has high adhesion to the formation region on the substrate, the conductive layer is peeled off by the substance 395 having an adhesion surface. Instead, it remains on the substrate 300. Accordingly, the source or drain electrode layer 330 and the source or drain electrode layer 308 which are patterned into a desired shape are formed (see FIG. 13D).

    A space can be formed between the source or drain electrode layer 330 and the source or drain electrode layer 308 with a small width and good controllability, and the source or drain electrode layer 330, the source or drain electrode layer 330 can be formed. Layers 308 are not in contact with each other. Therefore, since the channel width of the semiconductor is short, the resistance is reduced, the mobility is increased, and the controllability is formed, so that defects such as a short circuit can be prevented. According to the present invention, it is possible to form wirings and the like with good controllability even if they are designed to be densely arranged in a complicated manner by downsizing and thinning.

    A substance that changes the adhesion formed as a pretreatment after the formation of the electrode layer may be left, or unnecessary parts may be removed after the formation of the pattern. The removal can be performed using the formed product as a mask, and may be removed by ashing or etching with oxygen or the like.

    An N-type semiconductor layer is formed over the source or drain electrode layer 330 and the source or drain electrode layer 308 and etched using a mask made of resist or the like. The resist may be formed using a droplet discharge method. A semiconductor layer is formed on the N-type semiconductor layer and patterned again using a mask or the like. Accordingly, the N-type semiconductor layer 306 and the semiconductor layer 307 are formed.

  Next, the gate insulating layer 305 is formed with a single layer or a stacked structure by a plasma CVD method or a sputtering method (see FIG. 13E). As a particularly preferable embodiment, a three-layered structure including an insulator layer made of silicon nitride, an insulator layer made of silicon oxide, and an insulator layer made of silicon nitride may be used as the gate insulating layer.

    Next, a mask made of a resist or the like is formed over the gate insulating layer 305, and the gate insulating layer 305 is etched to form a through hole 345 (see FIG. 14A). In this embodiment mode, a mask is selectively formed by a droplet discharge method.

    A composition containing a conductive material is discharged over the gate insulating layer 305 with a droplet discharge device 381 to form the gate electrode layer 303 (see FIG. 14B). As in Embodiment Mode 1, the gate electrode layer can be further thinned into a desired shape by using the present invention. When the present invention is used, the width of the gate electrode layer 303 in the channel direction can be narrowed, so that the resistance is further reduced and the mobility is improved.

A pixel electrode layer 311 is formed by a droplet discharge method. The pixel electrode layer 311 and the source or drain electrode layer 308 are electrically connected through the through-hole 345 formed previously. The pixel electrode layer 311 can be formed using a material similar to that of the first electrode layer 117 described above. When a transmissive liquid crystal display panel is manufactured, indium tin oxide (ITO) and indium containing silicon oxide are used. It may be formed in a predetermined pattern with a composition containing tin oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and the like, and may be formed by firing.

  Next, an insulating layer 312 called an alignment film is formed by a printing method or a spin coating method so as to cover the pixel electrode layer 311. Note that the insulating layer 312 can be selectively formed by a screen printing method or an offset printing method. Then, rubbing is performed. Subsequently, a sealing material is formed in a peripheral region where pixels are formed by a droplet discharge method (not shown).

  After that, an insulating substrate 321 functioning as an alignment film, a colored layer 322 functioning as a color filter, a conductor layer 323 functioning as a counter electrode, a counter substrate 324 provided with a polarizing plate 325 and a substrate 300 which is a TFT substrate are separated from each other by a spacer. And a liquid crystal layer 320 is provided in the gap, whereby a liquid crystal display panel can be manufactured (see FIG. 14C). The polarizing plate may be provided on the side of the substrate 300 that does not have a TFT. A filler may be mixed in the sealing material, and a shielding film (black matrix) or the like may be formed on the counter substrate 324. Note that as a method for forming the liquid crystal layer, a dispenser type (dropping type) or a dip type (pumping type) in which liquid crystal is injected using a capillary phenomenon after the counter substrate 324 is attached can be used.

  A liquid crystal dropping injection method employing a dispenser method will be described with reference to FIG. In the liquid crystal dropping injection method of FIG. 29, the control device 40, the imaging means 42, the head 43, the liquid crystal 33, the marker 35, and the marker 45 include the barrier layer 34, the sealing material 32, the TFT substrate 30, and the counter substrate 20. A closed loop is formed by the sealing material 32, and the liquid crystal 33 is dropped from the head 43 once or plural times therein. When the viscosity of the liquid crystal material is high, the liquid crystal material is continuously discharged and adhered to the formation region while being connected. On the other hand, when the viscosity of the liquid crystal material is low, the liquid crystal material is intermittently ejected and droplets are dropped as shown in FIG. At that time, a barrier layer 34 is provided to prevent the sealing material 32 and the liquid crystal 33 from reacting. Subsequently, the substrates are bonded together in a vacuum, and thereafter UV curing is performed to fill the liquid crystal. Further, a sealing material may be formed on the TFT substrate side, and the liquid crystal may be dropped.

A connection portion is formed in order to connect the pixel portion formed in the above steps and an external wiring substrate. The insulator layer in the connection portion is removed by ashing using oxygen gas at or near atmospheric pressure. This treatment is performed using oxygen gas and one or more selected from hydrogen, CF ₄ , NF ₃ , H ₂ O, and CHF ₃ . In this step, in order to prevent damage and destruction due to static electricity, ashing is performed after sealing using the counter substrate. However, if there is little influence from static electricity, it may be performed at any timing. .

    Subsequently, a wiring board for connection is provided so that the wiring layer is electrically connected through the anisotropic conductor layer. The wiring board plays a role of transmitting signals and potentials from the outside. Through the above steps, a liquid crystal display panel having a display function can be manufactured.

    In this embodiment mode, the switching TFT has a single gate structure, but a multi-gate structure such as a double gate structure may be used. In the case where a semiconductor is manufactured using a SAS or a crystalline semiconductor, an impurity region can be formed by adding an impurity imparting one conductivity type. In this case, the semiconductor layer may have impurity regions having different concentrations. For example, the vicinity of the channel region of the semiconductor layer and the region stacked with the gate electrode layer may be low-concentration impurity regions, and the outer region may be high-concentration impurity regions.

  As described above, in this embodiment, the process can be simplified. In addition, by forming various components (parts) directly on the substrate using the droplet discharge method, a display panel can be easily used even when a glass substrate of 5th generation or later with one side exceeding 1000 mm is used. Can be manufactured.

  According to the present invention, a component constituting a display device can be formed in a desired pattern with good controllability. In addition, there is little material loss, and cost reduction can be achieved. Accordingly, a high-performance and highly reliable liquid crystal display device can be manufactured with high yield.

(Embodiment 4)
A thin film transistor is formed by applying the present invention, and a display device can be formed using the thin film transistor. When a light emitting element is used and an N-type transistor is used as a transistor for driving the light emitting element, The light emitted from the light emitting element performs any one of bottom emission, top emission, and dual emission. Here, a stacked structure of light-emitting elements corresponding to each case will be described with reference to FIGS.

  In this embodiment, a channel protective thin film transistor 481, a thin film transistor 461, and a thin film transistor 471 to which the present invention is applied are used. For the channel protective film, polyimide, polyvinyl alcohol, or the like may be dropped using a droplet discharge method. As a result, the exposure process can be omitted. Channel protective films include inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), photosensitive or non-photosensitive organic (resin) materials (polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene) Etc.), a resist, a kind of a low k material having a low dielectric constant, or a film made of a plurality of kinds, or a laminate of these films can be used. A siloxane resin may also be used. As a manufacturing method, a vapor deposition method such as a plasma CVD method or a thermal CVD method, or a sputtering method can be used. Alternatively, a droplet discharge method or a printing method (a method in which a pattern is directly formed such as screen printing or offset printing) can be used. A TOF film or an SOG film obtained by a coating method can also be used.

  First, the case where light is emitted to the substrate 480 side, that is, the case where bottom emission is performed will be described with reference to FIG. In this case, the source or drain electrode 482, the first electrode 484, the electroluminescent layer 485, and the second electrode 486 are sequentially stacked so as to be electrically connected to the thin film transistor 481. Next, the case where light is emitted to the side opposite to the substrate 480, that is, the case where top emission is performed will be described with reference to FIG. A source or drain electrode 462 electrically connected to the thin film transistor 461, a first electrode 463, an electroluminescent layer 464, and a second electrode 465 are sequentially stacked. With the above structure, even when light is transmitted through the first electrode 463, the light is reflected by the source or drain electrode 462 and emitted to the side opposite to the substrate 460. Note that in this structure, it is not necessary to use a light-transmitting material for the first electrode 463. Finally, a case where light is emitted to the substrate 470 side and the opposite side, that is, a case where double-sided emission is performed will be described with reference to FIG. A source or drain electrode 475 which is electrically connected to the thin film transistor 471, a first electrode 472, an electroluminescent layer 473, and a second electrode 474 are sequentially stacked. At this time, when both the first electrode 472 and the second electrode 474 are formed using a light-transmitting material or a thickness capable of transmitting light, dual emission is realized.

  The light emitting element has a structure in which an electroluminescent layer is sandwiched between a first electrode and a second electrode. It is necessary to select materials for the first electrode and the second electrode in consideration of a work function, and both the first electrode and the second electrode can be an anode or a cathode depending on a pixel configuration. In this embodiment mode, since the polarity of the driving TFT is an N-channel type, it is preferable that the first electrode be a cathode and the second electrode be an anode. In the case where the polarity of the driving TFT is a p-channel type, the first electrode may be an anode and the second electrode may be a cathode.

  When the first electrode is an anode, the electroluminescent layer is formed from the anode side from the HIL (hole injection layer), HTL (hole transport layer), EML (light-emitting layer), ETL (electron transport layer), EIL ( It is preferable to laminate in the order of the electron injection layer). When the first electrode is a cathode, the reverse is true, and from the cathode side, EIL (electron injection layer), ETL (electron transport layer), EML (light emitting layer), HTL (hole transport layer), HIL (hole injection) Layer) and the anode as the second electrode are preferably laminated in this order. The electroluminescent layer can have a single layer structure or a mixed structure in addition to the laminated structure.

  In addition, as the electroluminescent layer, materials that emit red (R), green (G), and blue (B) light are selectively formed by an evaporation method using an evaporation mask, respectively. A material that emits red (R), green (G), and blue (B) light can be formed by a droplet discharge method (such as a low-molecular or high-molecular material) in the same manner as a color filter. In this case, a mask is not used. Both are preferable because RGB can be separately applied.

In the case of a top emission type, in the case where light-transmitting ITO or ITSO is used for the second electrode, BzOS-Li in which Li is added to a benzoxazole derivative (BzOS) or the like can be used. Further, for example, EML may be Alq ₃ doped with a dopant corresponding to each emission color of R, G, and B (DCM in the case of R, DMQD in the case of G).

  Note that the electroluminescent layer is not limited to the above materials. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property. The material of the electroluminescent layer can be used as an organic material (including a low molecule or a polymer), or a composite material of an organic material and an inorganic material. Hereinafter, materials for forming the light emitting element will be described in detail.

Among the charge injecting and transporting materials, materials having a particularly high electron transporting property include, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (5-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), Bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline Examples thereof include metal complexes having a skeleton. As a substance having a high hole-transport property, for example, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (abbreviation: α-NPD), 4,4′-bis [ N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD) or 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) -triphenylamine (abbreviation: TDATA) ), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: MTDATA) (ie, benzene ring-nitrogen) And a compound having a bond of

Among the charge injecting and transporting materials, materials having particularly high electron injecting properties include alkali metals or alkaline earths such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ) and the like. Metal compounds can be mentioned. In addition, a mixture of a substance having a high electron transport property such as Alq ₃ and an alkaline earth metal such as magnesium (Mg) may be used.

Among the charge injecting and transporting materials, examples of the material having a high hole injecting property include molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium oxide (RuOx), tungsten oxide (WOx), and manganese oxide. Examples thereof include metal oxides such as (MnOx). In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (CuPC) can be given.

  The light emitting layer may be configured to perform color display by forming light emitting layers having different emission wavelength bands for each pixel. Typically, a light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed. In this case as well, it is possible to improve color purity and prevent mirror reflection (reflection) of the pixel portion by providing a filter that transmits light in the emission wavelength band on the light emission side of the pixel. Can do. By providing the filter, it is possible to omit a circularly polarizing plate that has been conventionally required, and to reduce loss of light emitted from the light emitting layer. Furthermore, a change in color tone that occurs when the pixel portion (display screen) is viewed obliquely can be reduced.

There are various kinds of light emitting materials. As the low-molecular organic light-emitting material, 4-dicyanomethylene-2-methyl-6- [2- (1,1,7,7-tetramethyl-9-julolidyl) ethenyl] -4H-pyran (abbreviation: DCJT), 4 -Dicyanomethylene-2-t-butyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCJTB), perifrantene, 2,5 -Dicyano-1,4-bis [2- (10-methoxy-1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] benzene, N, N'-dimethylquinacridone (abbreviation: DMQd), Coumarin 6, Coumarin 545T, Tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,9′-bianthryl, 9,10-diphenylanthracene (abbreviation: DPA) and 9,10-bis (2-naphthyl) anthrace (Abbreviation: DNA) or the like can be used. Other substances may also be used.

  On the other hand, the high molecular organic light emitting material has higher physical strength than the low molecular weight, and the durability of the device is high. In addition, since the film can be formed by coating, the device can be manufactured relatively easily. The structure of a light-emitting element using a high-molecular organic light-emitting material is basically the same as that when a low-molecular organic light-emitting material is used, and sequentially becomes a cathode, an organic light-emitting layer, and an anode. However, when forming a light-emitting layer using a high-molecular organic light-emitting material, it is difficult to form a laminated structure as in the case of using a low-molecular organic light-emitting material, and in many cases, a two-layer structure is formed. Specifically, the structure is a cathode, a light emitting layer, a hole transport layer, and an anode in this order.

  Since the light emission color is determined by the material for forming the light emitting layer, a light emitting element exhibiting desired light emission can be formed by selecting these materials. Examples of the polymer electroluminescent material that can be used for forming the light emitting layer include polyparaphenylene vinylene, polyparaphenylene, polythiophene, and polyfluorene.

  The polyparaphenylene vinylene system includes derivatives of poly (paraphenylene vinylene) [PPV], poly (2,5-dialkoxy-1,4-phenylene vinylene) [RO-PPV], poly (2- (2′- Ethyl-hexoxy) -5-methoxy-1,4-phenylenevinylene) [MEH-PPV], poly (2- (dialkoxyphenyl) -1,4-phenylenevinylene) [ROPh-PPV] and the like. The polyparaphenylene series includes derivatives of polyparaphenylene [PPP], poly (2,5-dialkoxy-1,4-phenylene) [RO-PPP], poly (2,5-dihexoxy-1,4-phenylene). ) And the like. The polythiophene series includes polythiophene [PT] derivatives, poly (3-alkylthiophene) [PAT], poly (3-hexylthiophene) [PHT], poly (3-cyclohexylthiophene) [PCHT], poly (3-cyclohexyl). -4-methylthiophene) [PCHMT], poly (3,4-dicyclohexylthiophene) [PDCHT], poly [3- (4-octylphenyl) -thiophene] [POPT], poly [3- (4-octylphenyl) -2,2 bithiophene] [PTOPT] and the like. Examples of the polyfluorene series include polyfluorene [PF] derivatives, poly (9,9-dialkylfluorene) [PDAF], poly (9,9-dioctylfluorene) [PDOF], and the like.

  Note that when a hole-transporting polymer organic light-emitting material is sandwiched and formed between the anode and the light-emitting polymer organic light-emitting material, the hole injection property from the anode can be improved. In general, an acceptor material dissolved in water is applied by spin coating or the like. In addition, since it is insoluble in an organic solvent, it can be stacked with the above-described light-emitting organic light-emitting material. Examples of the hole-transporting polymer organic light-emitting material include a mixture of PEDOT and camphor sulfonic acid (CSA) as an acceptor material, a mixture of polyaniline [PANI] and polystyrene sulfonic acid [PSS] as an acceptor material, and the like.

  The light emitting layer can be configured to emit monochromatic or white light. In the case of using a white light emitting material, color display can be made possible by providing a filter (colored layer) that transmits light of a specific wavelength on the light emission side of the pixel.

To form a light emitting layer that emits white light, for _{example, Alq 3, Alq 3, Alq} 3 doped with Nile Red which is partly red light emitting pigment, p-EtTAZ, by TPD (aromatic diamine) evaporation A white color can be obtained by sequentially laminating. In the case where the EL is formed by a coating method using spin coating, it is preferable that baking is performed by vacuum heating after coating. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as a hole injection layer is applied and baked on the entire surface, and then a luminescent center dye (1, 1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCM1), Nile Red, Coumarin 6 Etc.) A doped polyvinyl carbazole (PVK) solution may be applied to the entire surface and fired.

  The light emitting layer can also be formed as a single layer, and an electron transporting 1,3,4-oxadiazole derivative (PBD) may be dispersed in hole transporting polyvinyl carbazole (PVK). Further, white light emission can be obtained by dispersing 30 wt% PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, Nile red). In addition to the light-emitting element that can emit white light as shown here, a light-emitting element that can obtain red light emission, green light emission, or blue light emission can be manufactured by appropriately selecting the material of the light-emitting layer.

  Furthermore, a triplet excitation material containing a metal complex or the like may be used for the light emitting layer in addition to a singlet excitation light emitting material. For example, among red light emitting pixels, green light emitting pixels, and blue light emitting pixels, a red light emitting pixel having a relatively short luminance half time is formed of a triplet excitation light emitting material, and the other You may form with a singlet excitation luminescent material. The triplet excited luminescent material has a feature that the light emission efficiency is good, so that less power is required to obtain the same luminance. That is, when applied to a red pixel, the amount of current flowing through the light emitting element can be reduced, so that reliability can be improved. As a reduction in power consumption, a red light-emitting pixel and a green light-emitting pixel may be formed using a triplet excitation light-emitting material, and a blue light-emitting pixel may be formed using a singlet excitation light-emitting material. By forming a green light-emitting element having high human visibility with a triplet excited light-emitting material, power consumption can be further reduced.

  Examples of triplet excited luminescent materials include those using a metal complex as a dopant, and metal complexes having a third transition series element platinum as the central metal and metal complexes having iridium as the central metal are known. Yes. The triplet excited light-emitting material is not limited to these compounds, and a compound having the above structure and having an element belonging to group 8 to 10 in the periodic table as a central metal can also be used.

  The substances forming the light-emitting layer listed above are examples, and functionalities such as a hole injection transport layer, a hole transport layer, an electron injection transport layer, an electron transport layer, a light emission layer, an electron block layer, and a hole block layer are included. A light emitting element can be formed by appropriately stacking each layer. Moreover, you may form the mixed layer or mixed junction which combined these each layer. The layer structure of the light-emitting layer can be changed, and instead of having a specific electron injection region or light-emitting region, it is possible to provide a modification with an electrode for this purpose or a dispersed light-emitting material. Can be permitted without departing from the spirit of the present invention.

  A light-emitting element formed using the above materials emits light by being forward-biased. A pixel of a display device formed using a light-emitting element can be driven by a simple matrix method or an active matrix method as shown in Embodiment Mode 2. In any case, each pixel emits light by applying a forward bias at a specific timing, but is in a non-light emitting state for a certain period. By applying a reverse bias during this non-light emitting time, the reliability of the light emitting element can be improved. Light-emitting elements have a degradation mode in which the emission intensity decreases under constant driving conditions and a degradation mode in which the non-light-emitting area expands within the pixel and apparently decreases in brightness. However, alternating current that applies a bias in the forward and reverse directions. By performing a typical drive, the progress of deterioration can be delayed, and the reliability of the light-emitting display device can be improved. Further, either digital driving or analog driving can be applied.

  Therefore, although not illustrated in FIG. 31, a color filter (colored layer) may be formed on the counter substrate of the substrate 480. The color filter (colored layer) can be formed by a droplet discharge method. In that case, laser light irradiation treatment or the like can be applied as the above-described base pretreatment. By using the present invention, a color filter (colored layer) can be formed in a desired pattern with good controllability. When a color filter (colored layer) is used, high-definition display can be performed. This is because the color filter (colored layer) can correct a broad peak to be sharp in the emission spectrum of each RGB.

  As described above, the case where a material that emits light of each RGB is formed has been described. However, full color display can be performed by forming a material that emits light of a single color and combining a color filter and a color conversion layer. The color filter (colored layer) and the color conversion layer may be formed, for example, on the second substrate (sealing substrate) and attached to the substrate. In addition, as described above, any of the material that emits monochromatic light, the color filter (colored layer), and the color conversion layer can be formed by a droplet discharge method.

  Of course, monochromatic light emission may be displayed. For example, an area color type display device may be formed using monochromatic light emission. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

  In the above configuration, a material having a small work function can be used as the cathode, and for example, Ca, Al, CaF, MgAg, AlLi, or the like is desirable. The electroluminescent layer may be any of a single layer type, a laminated type, and a mixed type having no layer interface. It is also formed from singlet materials, triplet materials, or a combination of these materials, charge injection transport materials including organic compounds or inorganic compounds, and light-emitting materials. An organic compound having a molecule number of 20 or less, or a chained molecule length of 10 μm or less), including one or more layers selected from macromolecular organic compounds, and having an electron injecting and transporting property Alternatively, it may be combined with a hole injection / transport inorganic compound. The first electrode 484, the first electrode 463, and the first electrode 472 are formed using a transparent conductive film that transmits light. For example, in addition to ITO and ITSO, 2 to 20% zinc oxide (ZnO) is added to indium oxide. ) May be used. Note that plasma treatment in an oxygen atmosphere or heat treatment in a vacuum atmosphere is preferably performed before the first electrode 484, the first electrode 463, and the first electrode 472 are formed. A partition wall (also referred to as a bank) is formed using a material containing silicon, an organic material, and a compound material. A porous film may be used. However, it is preferable to use a photosensitive or non-photosensitive material such as acrylic or polyimide because the side surface has a shape in which the radius of curvature continuously changes and the upper thin film is formed without being cut off. This embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 5)
In the display panel manufactured in any of Embodiments 4 to 6, the driver circuit on the scanning line side can be formed over the substrate 3700 as described in FIG. it can.

FIG. 25 shows a block diagram of a scanning line side driving circuit constituted by an n-channel TFT using SAS capable of obtaining a field effect mobility of 1 to 15 cm ² / V · sec.

  In FIG. 25, a block 500 corresponds to a pulse output circuit that outputs a sampling pulse for one stage, and the shift register includes n pulse output circuits. Reference numeral 901 denotes a buffer circuit, to which a pixel 902 is connected.

  FIG. 26 shows a specific configuration of a block 500 corresponding to a pulse output circuit, and a circuit is configured by n-channel TFTs 601 to 612. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 8 μm, the channel width can be set in the range of 10 to 80 μm.

  A specific configuration of the buffer circuit 901 is shown in FIG. Similarly, the buffer circuit is composed of n-channel TFTs 620 to 635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 10 μm, the channel width is set in the range of 10 to 1800 μm. When the present invention is used, the wiring can be formed in a desired shape with good controllability, and such a thin wiring having a channel width of 10 μm can be stably formed without disconnection.

  In order to realize such a circuit, the TFTs need to be connected to each other by wiring, and a configuration example of the wiring in that case is shown in FIG. In FIG. 16, as in the fourth embodiment, the gate electrode layer 103, the gate insulating layer 106 (the insulating layer 106a made of silicon nitride, the insulating layer 106b made of silicon oxide, and the insulating layer 106c made of silicon nitride) A stack of layers), a semiconductor layer 107 formed of SAS, an N-type semiconductor layer 109 for forming a source and a drain, a source and drain electrode layer 111, and a source and drain electrode layer 112 are formed. Show. In this case, the connection wiring layer 160, the connection wiring layer 161, and the connection wiring layer 162 are formed over the substrate 100 in the same process as the gate electrode layer 104. A substance having a low adhesion property including a light absorber is formed over the substrate 100, and regions where the gate electrode layer 104, the connection wiring layer 160, the connection wiring layer 161, and the connection wiring layer 162 are formed are formed on the light absorber. Irradiation treatment with a laser beam having a wavelength that is absorbed is performed. Thus, the processed regions are a high adhesion region 102a, a high adhesion region 102b, a high adhesion region 102c, and a high adhesion region 102d as compared with the surrounding region. Then, part of the gate insulating layer is etched so that the connection wiring layer 160, the connection wiring layer 161, and the connection wiring layer 162 are exposed, and the source and drain electrode layers 111 and 112 and the source and drain electrode layers 112 are etched. Various circuits can be realized by connecting TFTs as appropriate by the connection wiring layer 163 formed in the same process.

(Embodiment 6)
Next, a mode in which a driver circuit for driving is mounted on the display panel manufactured by Embodiment Modes 4 to 7 will be described.

  First, a display device employing a COG method is described with reference to FIG. A pixel portion 2701 for displaying information such as characters and images is provided over the substrate 2700. A substrate provided with a plurality of drive circuits is divided into a rectangular shape, and a divided drive circuit (also referred to as a driver IC) 2751 is mounted on the substrate 2700. FIG. 15A illustrates a mode in which a plurality of driver ICs 2751 and an FPC 2750 are mounted on the tip of the driver ICs 2751. Further, the size to be divided may be substantially the same as the length of the side of the pixel portion on the signal line side, and a tape may be mounted on the tip of the driver IC on a single driver IC.

  Alternatively, a TAB method may be employed. In that case, a plurality of tapes may be attached and driver ICs may be mounted on the tapes as shown in FIG. As in the case of the COG method, a single driver IC may be mounted on a single tape. In this case, a metal piece or the like for fixing the driver IC may be attached together due to strength problems.

  A plurality of driver ICs mounted on these display panels may be formed on a rectangular substrate having a side of 300 mm to 1000 mm from the viewpoint of improving productivity.

  That is, a plurality of circuit patterns having a drive circuit portion and an input / output terminal as one unit may be formed on the substrate, and finally divided and taken out. The long side of the driver IC may be formed in a rectangular shape having a long side of 15 to 80 mm and a short side of 1 to 6 mm in consideration of the length of one side of the pixel portion and the pixel pitch. Or a length obtained by adding one side of the pixel portion and one side of each driver circuit.

  The advantage of the external dimensions of the driver IC over the IC chip lies in the length of the long side. When a driver IC formed with a long side of 15 to 80 mm is used, the number required for mounting corresponding to the pixel portion is as follows. This is less than when an IC chip is used, and the manufacturing yield can be improved. Further, when a driver IC is formed over a glass substrate, the shape of the substrate used as a base is not limited, and thus productivity is not impaired. This is a great advantage compared with the case where the IC chip is taken out from the circular silicon wafer.

  In the case where the scan line side driver circuit 3702 is formed over the substrate as shown in FIG. 33B, a driver IC in which a signal line side driver circuit is formed is mounted in a region outside the pixel portion 3701. Is done. These driver ICs are drive circuits on the signal line side. In order to form a pixel region corresponding to RGB full color, the number of signal lines in the XGA class is 3072 and the number in the UXGA class is 4800. The signal lines formed in such a number are divided into several blocks at the end of the pixel portion 3701 to form lead lines, and are collected according to the pitch of the output terminals of the driver IC.

  The driver IC is preferably formed of a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiating continuous-emitting laser light. Therefore, a continuous light emitting solid state laser or gas laser is used as an oscillator for generating the laser light. When a continuous light emission laser is used, a transistor can be formed using a polycrystalline semiconductor layer having a large grain size with few crystal defects. In addition, since the mobility and response speed are good, high-speed driving is possible, the operating frequency of the element can be improved as compared with the prior art, and there is less variation in characteristics, so that high reliability can be obtained. Note that for the purpose of further improving the operating frequency, the channel length direction of the transistor and the scanning direction of the laser light are preferably matched. This is because, in the laser crystallization process using a continuous-wave laser, the highest mobility is obtained when the channel length direction of the transistor and the scanning direction of the laser beam with respect to the substrate are substantially parallel (preferably −30 ° to 30 °). Is obtained. Note that the channel length direction corresponds to the direction in which current flows in the channel formation region, in other words, the direction in which charges move. The transistor thus fabricated has an active layer composed of a polycrystalline semiconductor layer in which crystal grains extend in the channel direction, which means that the crystal grain boundaries are formed substantially along the channel direction. means.

  In order to perform laser crystallization, it is preferable to significantly narrow down the laser beam, and the width of the laser beam shape (beam spot) should be about 1 mm to 3 mm, which is the same width of the short side of the driver IC. Is good. In order to ensure a sufficient and efficient energy density for the irradiated object, the laser light irradiation region is preferably linear. However, the line shape here does not mean a line in a strict sense, but means a rectangle or an ellipse having a large aspect ratio. For example, the aspect ratio is 2 or more (preferably 10 or more and 10,000 or less). In this manner, a method for manufacturing a display device with improved productivity can be provided by setting the width of the laser beam shape (beam spot) to the same length as the short side of the driver IC.

  As shown in FIGS. 15A and 15B, driver ICs may be mounted as both the scanning line driver circuit and the signal line driver circuit. In that case, the specifications of the driver ICs used on the scanning line side and the signal line side may be different.

In the pixel region, signal lines and scanning lines intersect to form a matrix, and transistors are arranged corresponding to the respective intersections. The present invention is characterized in that a TFT having an amorphous semiconductor or semi-amorphous semiconductor as a channel portion is used as a transistor arranged in a pixel region. The amorphous semiconductor is formed by a method such as a plasma CVD method or a sputtering method. A semi-amorphous semiconductor can be formed at a temperature of 300 ° C. or less by a plasma CVD method. For example, even a non-alkali glass substrate having an outer dimension of 550 × 650 mm has a film thickness necessary for forming a transistor. Is formed in a short time. Such a feature of the manufacturing technique is effective in manufacturing a large-screen display device. In addition, a semi-amorphous TFT can obtain a field effect mobility of ² to 10 cm ² / V · sec by forming a channel formation region with SAS. Further, when the present invention is used, the wiring can be formed into a desired shape with good controllability, and thus a thin wiring with such a short channel width can be stably formed without disconnection. A TFT having electric characteristics necessary for sufficiently functioning a pixel can be formed. Therefore, this TFT can be used as a switching element for a pixel or an element constituting a driving circuit on the scanning line side. Therefore, a display panel that realizes system-on-panel can be manufactured.

  By using TFTs in which the semiconductor layer is formed of SAS, the scanning line side driver circuit can also be integrally formed on the substrate. In the case of using TFTs in which the semiconductor layer is formed of AS, the scanning line side driver circuit and the signal A driver IC may be mounted on both the line side driver circuits.

  In that case, it is preferable that the specifications of the driver ICs used on the scanning line side and the signal line side are different. For example, although a transistor constituting the driver IC on the scanning line side is required to have a withstand voltage of about 30 V, the driving frequency is 100 kHz or less, and a relatively high speed operation is not required. Therefore, it is preferable to set the channel length (L) of the transistors forming the driver on the scanning line side to be sufficiently large. On the other hand, it is sufficient for the transistor of the driver IC on the signal line side to have a withstand voltage of about 12V, but the drive frequency is about 65 MHz at 3V, and high speed operation is required. Therefore, it is preferable to set the channel length and the like of the transistors constituting the driver on the micron rule. When the present invention is used, a delicate pattern can be formed by processing by laser irradiation, and it is possible to sufficiently cope with such a micron rule.

  The method for mounting the driver IC is not particularly limited, and a known COG method, wire bonding method, or TAB method can be used.

  By setting the thickness of the driver IC to be the same as that of the counter substrate, the height between the two becomes substantially the same, which contributes to the reduction in thickness of the entire display device. In addition, since each substrate is made of the same material, thermal stress is not generated even when a temperature change occurs in the display device, and the characteristics of a circuit made of TFTs are not impaired. In addition, the number of driver ICs to be mounted in one pixel region can be reduced by mounting the drive circuit with a driver IC that is longer than the IC chip as shown in this embodiment.

  As described above, a driver circuit can be incorporated in the display panel.

(Embodiment 7)
A structure of a pixel of the display panel described in this embodiment will be described with reference to an equivalent circuit diagram illustrated in FIG.

  In the pixel shown in FIG. 17A, a signal line 410, a power supply line 411, a power supply line 412, a power supply line 413, and a scanning line 414 are arranged in the column direction. The pixel further includes a switching TFT 401, a driving TFT 403, a current control TFT 404, a capacitor element 402, and a light emitting element 405.

  The pixel shown in FIG. 17C is different from the pixel shown in FIG. 17A except that the gate electrode of the driving TFT 403 is connected to the power supply line 415 arranged in the row direction. It is a configuration. That is, both pixels shown in FIGS. 17A and 17C show the same equivalent circuit diagram. However, in the case where the power supply line 412 is arranged in the column direction (FIG. 17A) and the power supply line 415 is arranged in the row direction (FIG. 17C), each power supply line is conductive on a different layer. Formed with body layers. Here, attention is paid to the wiring to which the gate electrode of the driving TFT 403 is connected, and FIGS. 17A and 17C are separately shown in order to show that the layers for producing these are different.

As a feature of the pixel shown in FIGS. 17A and 17C, a driving TFT 403 and a current control TFT 404 are connected in series within the pixel, and the channel length L ₃ , channel width W ₃ , and current control of the driving TFT 403 are as follows. The channel length L ₄ and the channel width W ₄ of the TFT 404 for use are set so as to satisfy L ₃ / W ₃ : L ₄ / W ₄ = 5 to 6000: 1. As an example when 6000: 1 is satisfied, there is a case where L ₃ is 500 μm, W ₃ is 3 μm, L ₄ is 3 μm, and W ₄ is 100 μm. When the present invention is used, the wiring can be formed in a desired shape with good controllability, and such a thin wiring with W ₃ of 3 μm can be stably formed without disconnection. Accordingly, a TFT having electric characteristics necessary for sufficiently functioning a pixel as shown in FIGS. 17A and 17C can be formed, and a highly reliable display panel with excellent display capability can be manufactured. .

Note that the driving TFT 403 operates in a saturation region and controls the current value flowing through the light emitting element 405, and the current control TFT 404 operates in a linear region and controls the supply of current to the light emitting element 405. . Both TFTs preferably have the same conductivity type in terms of manufacturing process. The driving TFT 403 may be a depletion type TFT as well as an enhancement type. In the present invention having the above structure, since the current control TFT 404 operates in a linear region, a slight change in V _GS of the current control TFT 404 does not affect the current value of the light emitting element 405. That is, the current value of the light emitting element 405 is determined by the driving TFT 403 operating in the saturation region. The present invention having the above structure can provide a display device in which luminance unevenness of a light emitting element due to variation in TFT characteristics is improved and image quality is improved.

  In the pixels shown in FIGS. 17A to 17D, the switching TFT 401 controls input of a video signal to the pixel. When the switching TFT 401 is turned on and a video signal is input into the pixel. The video signal is held in the capacitor 402. Note that FIGS. 17A and 17C illustrate a structure in which the capacitor 402 is provided; however, the present invention is not limited to this, and the capacity for holding a video signal can be covered by a gate capacity or the like. In this case, the capacitor 402 is not necessarily provided explicitly.

  The light-emitting element 405 has a structure in which an electroluminescent layer is sandwiched between two electrodes, and a potential difference is generated between the pixel electrode and the counter electrode (between the anode and the cathode) so that a forward bias voltage is applied. Is provided. The electroluminescent layer is composed of a wide variety of materials such as organic materials and inorganic materials. The luminescence in the electroluminescent layer includes light emission (fluorescence) when returning from a singlet excited state to a ground state, and a triplet excited state. And light emission (phosphorescence) when returning to the ground state.

  The pixel shown in FIG. 17B has the same pixel structure as that shown in FIG. 17A except that a TFT 406 and a scanning line 416 are added. Similarly, the pixel illustrated in FIG. 17D has the same pixel structure as that illustrated in FIG. 17C except that a TFT 406 and a scanning line 416 are added.

  The TFT 406 is controlled to be turned on or off by a newly arranged scanning line 416. When the TFT 406 is turned on, the charge held in the capacitor 402 is discharged and the TFT 404 is turned off. That is, a state in which no current flows through the light emitting element 405 can be created by the arrangement of the TFT 406. Accordingly, the configurations in FIGS. 17B and 17D can improve the duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all the pixels. It becomes possible.

  In the pixel shown in FIG. 17E, a signal line 450, a power supply line 451, a power supply line 452, and a scanning line 453 are arranged in the column direction. In addition, the pixel includes a switching TFT 441, a driving TFT 443, a capacitor element 442, and a light emitting element 444. The pixel illustrated in FIG. 17F has the same pixel structure as that illustrated in FIG. 17E except that a TFT 445 and a scanning line 454 are added. Note that the duty ratio of the structure in FIG. 17F can also be improved by the arrangement of the TFTs 445.

    As described above, when the present invention is used, wiring and the like can be stably formed with good controllability without causing defective formation, so that high electrical characteristics and reliability can be imparted to the TFT. Therefore, it can sufficiently cope with applied technology for improving the display capability of the pixel in accordance with the purpose of use.

(Embodiment 8)
One mode in which protective diodes are provided in the scanning line side input terminal portion and the signal line side input terminal portion will be described with reference to FIG. In FIG. 24, a pixel 2702 is provided with a TFT 501, a TFT 502, a capacitor 504, and a light emitting element 503. This TFT has a configuration similar to that of the second embodiment.

  A protection diode 561 and a protection diode 562 are provided in the signal line side input terminal portion. This protection diode is manufactured in the same process as the TFT 501 or the TFT 502, and is operated as a diode by connecting the gate and one of the drain or the source. An equivalent circuit diagram of the top view shown in FIG. 24 is shown in FIG.

  The protection diode 561 includes a gate electrode layer, a semiconductor layer, and a wiring layer. The protective diode 562 has a similar structure. The common potential line 554 and the common potential line 555 connected to the protection diode are formed in the same layer as the gate electrode layer. Therefore, in order to be electrically connected to the wiring layer, it is necessary to form a contact hole in the gate insulating layer.

  The contact hole to the gate insulating layer may be etched by forming a mask layer. In this case, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask layer on the entire surface of the substrate.

  The signal wiring layer is formed of the same layer as the source and drain wiring layer 505 in the TFT 501, and has a structure in which the signal wiring layer connected thereto and the source or drain side are connected.

  The input terminal portion on the scanning signal line side has the same configuration. A protection diode provided in the input stage can be formed at the same time. Note that the position at which the protective diode is inserted is not limited to this embodiment mode, and can be provided between the driver circuit and the pixel.

  As described above, when the present invention is used, wiring and the like can be stably formed with good controllability without causing defective formation. Therefore, by forming a protective circuit, wiring and the like are complicated and densely formed. Even in such a case, there will be no short circuit due to poor installation during formation. In addition, since it is not necessary to consider a wide margin, even if the device is reduced in size and thickness, it can sufficiently cope. Therefore, a display device having favorable electrical characteristics and high reliability can be manufactured.

(Embodiment 9)
FIG. 22 shows an example in which an EL display module is formed using a TFT substrate 2800 manufactured by applying the present invention. In FIG. 22, a pixel portion including pixels is formed over a TFT substrate 2800.

  In FIG. 22, outside the pixel portion and between the driver circuit and the pixel, the same TFT as that formed in the pixel or the gate of the TFT and one of the source and the drain is connected to be the same as the diode. The protection circuit portion 2801 operated in the above is provided. As the driver circuit 2809, a driver IC formed of a single crystal semiconductor, a stick driver IC formed of a polycrystalline semiconductor film over a glass substrate, a driver circuit formed of SAS, or the like is applied.

  The TFT substrate 2800 is fixed to the sealing substrate 2820 through spacers 2806a and 2806b formed by a droplet discharge method. The spacer is preferably provided to keep the distance between the two substrates constant even when the substrate is thin and the area of the pixel portion is increased. A space between the TFT substrate 2800 and the sealing substrate 2820 on the light-emitting element 2804 and the light-emitting element 2805 connected to the TFT 2802 and the TFT 2803, respectively, may be solidified by filling a light-transmitting resin material. Then, it may be filled with dehydrated nitrogen or inert gas.

  FIG. 22 shows a case where the light-emitting element 2804 and the light-emitting element 2805 have a top emission type (top emission type) configuration, in which light is emitted in the direction of the arrow shown in the drawing. Each pixel can perform multicolor display by changing the emission color of the pixels to red, green, and blue. At this time, by forming the colored layer 2807a, the colored layer 2807b, and the colored layer 2807c corresponding to each color on the sealing substrate 2820 side, the color purity of the emitted light can be increased. Alternatively, the pixel may be combined with a colored layer 2807a, a colored layer 2807b, or a colored layer 2807c as a white light emitting element.

  The driver circuit 2809 is connected to a scanning line or a signal line connection terminal provided at one end of the TFT substrate 2800 through a wiring substrate 2810. Further, a heat pipe 2813 and a heat radiating plate 2812 may be provided in contact with or in proximity to the TFT substrate 2800 to enhance the heat radiation effect.

  In FIG. 22, the top emission EL module is used. However, the configuration of the light emitting element and the arrangement of the external circuit board may be changed to have a bottom emission structure, of course, a dual emission structure in which light is emitted from both the upper and lower surfaces. In the case of a top emission type structure, an insulating layer serving as a partition wall may be colored and used as a black matrix. The partition walls can be formed by a droplet discharge method, and may be formed by mixing a resin material such as polyimide with a pigment-based black resin, carbon black, or the like, or may be a laminate thereof.

  Further, in the TFT substrate 2800, a sealing structure may be formed by attaching a resin film to the side where the pixel portion is formed using a sealing material or an adhesive resin. Although glass sealing using a glass substrate is described in this embodiment mode, various sealing methods such as resin sealing using a resin, plastic sealing using a plastic, and film sealing using a film can be used. A gas barrier film for preventing the permeation of water vapor may be provided on the surface of the resin film. By adopting a film sealing structure, further reduction in thickness and weight can be achieved.

(Embodiment 10)
A television device can be completed with the display device formed according to the present invention. In the display panel, only the pixel portion is formed as shown in FIG. 33A, and the scan line driver circuit and the signal line driver circuit are mounted by the TAB method as shown in FIG. In the case of mounting by the COG method as shown in FIG. 15A, the TFT is formed by SAS as shown in FIG. 33B, and the pixel portion and the scanning line side driver circuit are integrated on the substrate. In some cases, the signal line side driver circuit is formed as a separate driver IC, and the pixel portion, the signal line side driver circuit, and the scanning line side driver circuit are integrally formed over the substrate as shown in FIG. However, any form is acceptable.

  As other external circuit configurations, on the video signal input side, among the signals received by the tuner, the video signal amplification circuit that amplifies the video signal, and the signal output from it corresponds to each color of red, green, and blue And a control circuit for converting the video signal into the input specification of the driver IC. The control circuit outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit may be provided on the signal line side and an input digital signal may be divided into m pieces and supplied.

  Of the signals received by the tuner, the audio signal is sent to the audio signal amplifier circuit, and the output is supplied to the speaker via the audio signal processing circuit. The control circuit receives control information of the receiving station (reception frequency) and volume from the input unit, and sends a signal to the tuner and the audio signal processing circuit.

  FIG. 30 shows an example of a liquid crystal display module. A TFT substrate 2600 and a counter substrate 2601 are fixed to each other with a sealant 2602, and a pixel portion 2603 and a liquid crystal layer 2604 are provided therebetween to form a display region. The colored layer 2605 is necessary for color display. In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. A polarizing plate 2606, a polarizing plate 2607, and a lens film 2613 are disposed outside the TFT substrate 2600 and the counter substrate 2601. The light source is composed of a cold cathode tube 2610 and a reflector 2611. The circuit board 2612 is connected to the TFT substrate 2600 by a drive circuit 2608 and a flexible wiring board 2609, and an external circuit such as a control circuit or a power supply circuit is incorporated. .

  As shown in FIGS. 20A and 20B, the display module can be incorporated into a housing to complete the television device. When an EL display module as shown in FIG. 22 is used, a liquid crystal television device can be completed when a liquid crystal display module as shown in FIG. 30 is used for an EL television device. A main screen 2003 is formed by the display module, and a speaker portion 2009, operation switches, and the like are provided as other accessory equipment. Thus, a television device can be completed according to the present invention.

  In addition, as shown in FIG. 19, reflected light of light incident from the outside may be blocked using a retardation plate or a polarizing plate. FIG. 19 shows a top emission type structure in which an insulating layer 3605 serving as a partition is colored and used as a black matrix. This partition wall can be formed by a droplet discharge method, and carbon black or the like may be mixed with a resin material such as polyimide, or may be a laminate thereof. A different material may be discharged to the same region a plurality of times by a droplet discharge method to form a partition wall. In the present embodiment, a pigment-based black resin is used. A λ / 4 plate or a λ / 2 plate may be used as the phase difference plate 3603 and the phase difference plate 3604 so that light can be controlled. As a structure, a TFT substrate 2800, a light emitting element 2804, a sealing substrate (sealing material) 2820, a retardation plate 3603, a retardation plate 3604 (λ / 4 plate, λ / 2 plate), and a polarizing plate 3602 are sequentially formed. The light emitted from the element passes through them and is emitted to the outside from the polarizing plate side. The retardation plate and the polarizing plate may be installed on the side from which light is emitted, and may be installed on both sides as long as the display is a double-sided emission type that emits light on both sides. Further, an antireflection film 3601 may be provided outside the polarizing plate. This makes it possible to display a higher-definition and precise image.

  As shown in FIG. 20A, a display panel 2002 using a display element is incorporated in a housing 2001, and reception of general television broadcasting is started by a receiver 2005, and a wired or wireless connection is made via a modem 2004. By connecting to a communication network, information communication in one direction (from the sender to the receiver) or in both directions (between the sender and the receiver or between the receivers) can be performed. The television device can be operated by a switch incorporated in the housing or a separate remote control device 2006, and the remote control device 2006 also includes a display unit 2007 for displaying information to be output. good.

  In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display channels, volume, and the like. In this configuration, the main screen 2003 may be formed using an EL display panel with an excellent viewing angle, and the sub screen may be formed using a liquid crystal display panel that can display with low power consumption. In order to prioritize the reduction in power consumption, the main screen 2003 may be formed using a liquid crystal display panel, the sub screen may be formed using an EL display panel, and the sub screen may blink. When the present invention is used, a highly reliable display device can be obtained even when such a large substrate is used and a large number of TFTs and electronic components are used.

  FIG. 20B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 2010, a keyboard portion 2012 that is an operation portion, a display portion 2011, a speaker portion 2013, and the like. The present invention is applied to manufacture of the display portion 2012. Since the display portion in FIG. 20B uses a bendable substance, the television set has a curved display portion. Since the shape of the display portion can be freely designed as described above, a television device having a desired shape can be manufactured.

  By using the present invention, the process can be simplified, and a display panel can be easily manufactured even if a glass substrate of the fifth generation or more in which one side exceeds 1000 mm is used.

  According to the present invention, components constituting the display device can be formed in a desired pattern with good controllability, material loss is small, and cost reduction can be achieved. Therefore, a television device using the present invention can be formed at a low cost even if it has a display portion with a large screen, and even if it is thin and wiring and the like are refined, a formation defect does not occur. Therefore, a high-performance and highly reliable television device can be manufactured with high yield.

  Of course, the present invention is not limited to a television device, but can be applied to various applications such as personal computer monitors, information display boards at railway stations and airports, and advertisement display boards on streets. can do.

(Embodiment 11)
Various display devices can be manufactured by applying the present invention. That is, the present invention can be applied to various electronic devices in which these display devices are incorporated in a display portion.

  Such electronic devices include cameras such as video cameras and digital cameras, projectors, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, game machines, personal digital assistants (mobile computers, mobile phones or An electronic book), and an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as a digital versatile disc (DVD) and displaying the image). Examples thereof are shown in FIG.

  FIG. 21A illustrates a personal computer, which includes a main body 2101, a housing 2102, a display portion 2103, a keyboard 2104, an external connection port 2105, a pointing mouse 2106, and the like. The present invention is applied to manufacturing the display portion 2103. When the present invention is used, a highly reliable high-quality image can be displayed even if the size is reduced and wiring and the like are refined.

  FIG. 21B shows an image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2201, a housing 2202, a display portion A 2203, a display portion B 2204, and a recording medium (DVD etc.) reading portion 2205. , An operation key 2206, a speaker portion 2207, and the like. The display portion A2203 mainly displays image information, and the display portion B2204 mainly displays character information. The present invention is applied to the manufacture of the display portion A2203 and the display portion B2204. When the present invention is used, a highly reliable high-quality image can be displayed even if the size is reduced and wiring and the like are refined.

  FIG. 21C illustrates a mobile phone, which includes a main body 2301, an audio output portion 2302, an audio input portion 2303, a display portion 2304, operation switches 2305, an antenna 2306, and the like. By applying the display device manufactured according to the present invention to the display portion 2304, a highly reliable and high-quality image can be displayed even in a mobile phone that is downsized and wiring and the like are precise.

  FIG. 21D illustrates a video camera, which includes a main body 2401, a display portion 2402, a housing 2403, an external connection port 2404, a remote control reception portion 2405, an image receiving portion 2406, a battery 2407, an audio input portion 2408, an eyepiece portion 2409, and an operation. Key 2410 and the like. The present invention can be applied to the display portion 2402. By applying the display device manufactured according to the present invention to the display portion 2402, a highly reliable and high-quality image can be displayed even with a video camera that is downsized and wiring and the like are precise. This embodiment mode can be freely combined with the above embodiment modes.

    Further, the present invention can be applied to a semiconductor device, and the use of the semiconductor device to which the present invention is applied is wide. For example, an ID chip which is one form of the semiconductor device of the present invention is a bill, a coin, a securities, Can be used in certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, medicines, electronic devices, etc. it can. The present invention can also be used for a processor chip which is an aggregate having various signal processing functions.

    In this example, the effect of the present invention will be described based on experimental results.

As described in Embodiment Mode 1, the substrate is made to have low adhesion by using a substance having low adhesion. In this example, a light absorber was added to a substance having low adhesion. Using FAS, which is a silane coupling agent, as a substance with low adhesion, using rhodamine B, which is a dye as a light absorber, and diluting with isopropyl alcohol as a solvent, a composition with low adhesion is applied by spin coating. did. Since a YVO ₄ laser having a laser wavelength of 532 nm was used, rhodamine B, which is a dye having an absorption region at a wavelength of 532 nm of laser light, was used as the light absorber. Rhodamine B was mixed until saturation to obtain a solution. The composition having low adhesion was processed by irradiating a laser beam having a wavelength of 532 nm while moving the stage on which the processed product was placed. Thereafter, washing with water was performed to remove a certain amount of pigment, and then a composition containing silver as a conductive material was discharged. The discharged composition was heated and baked in air at a temperature of 100 ° C. for 30 minutes and at a temperature of 230 ° C. for 1 hour to form a silver wiring as shown in FIG. A Kapton tape was attached to the silver wiring shown in FIG. 34A, a peel test was performed, and the shape of the composition with respect to the irradiation treatment region and the treatment region by the laser beam was observed. The adhesive strength of Kapton tape (registered trademark of DuPont) used in the experiment is 5.39 N / 25 mm width, and the tensile strength is 122.6 N / 25 mm width. FIG. 34B shows an enlarged view of the silver wiring after the peel test, and FIGS. 34C and 34D are enlarged views of the silver wiring of FIG. 34B. 34A to 34D are optical micrographs. The scanning direction of the laser beam is the vertical direction of the paper surface, and the discharge direction of the composition containing silver as the conductive material is the vertical direction of the paper surface.

    In FIG. 34B, the irradiation treatment areas with laser light are 1a, 1b, 1c, 1d, 1e, and 1f, and the non-irradiation treatment areas are 2a, 2b, 2c, 2d, 2e, and 2f. In the irradiation treatment area, the low adhesion substance is decomposed by the laser beam and the adhesion is enhanced. Therefore, the irradiation area and the non-irradiation area have different adhesion, and the irradiation treatment area has a relatively high adhesion. The adhesion region and the non-irradiation treatment region are low adhesion regions with low adhesion. Therefore, as shown in FIGS. 34B to 34D, the silver wiring formed in the non-irradiated regions 2a, 2b, 2c, 2d, 2e, and 2f, which are low adhesion regions, is peeled off by peeling with a tape. As a result, only the silver wiring formed in the irradiation treatment regions 1a, 1b, 1c, 1d, 1e, and 1f, which are high adhesion regions, remained without peeling. It can be seen that the high adhesion region has strong adhesion with the silver wiring, and the low adhesion region has weak adhesion with the silver wiring. Since the beam diameter of the laser beam is 80 μm, the width in the major axis direction of the silver wiring in the irradiation processing regions 1a, 1b, 1c, 1d, 1e and 1f is also approximately 80 μm. In the optical micrograph of FIG. 34 (B), the length of the silver wiring formed in the irradiation processing region 1c in the major axis direction is 78 μm, which is about the same as the width of the irradiation processing region. Thus, as shown in FIGS. 34 (C) and 34 (D), the remaining silver wiring reflects the shape of the laser light irradiation region, and from this, it can be confirmed that fine shape processing is possible. .

  As can be confirmed from the above results, when the present invention is used, a formed product can be formed in a desired pattern with good controllability. In addition, there is little material loss, and cost reduction can be achieved. Therefore, a high-performance and highly reliable display device can be manufactured with high yield.

The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. The top view of the display apparatus of this invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. FIG. 10 is a circuit diagram illustrating a structure of a pixel that can be applied to an EL display panel of the present invention. FIG. 6 is a top view illustrating a display panel of the present invention. Sectional drawing explaining the structural example of EL display module of this invention. FIG. 11 illustrates an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. Sectional drawing explaining the structural example of EL display module of this invention. FIG. 25 is an equivalent circuit diagram of an EL display panel described in FIG. FIG. 14 is a top view illustrating an EL display panel of the present invention. 6A and 6B illustrate a circuit structure in the case where a scan line side driver circuit is formed using TFTs in an EL display panel of the present invention. 6A and 6B illustrate a circuit configuration in the case where a scan line side driver circuit is formed using TFTs in an EL display panel of the present invention (shift register circuit). 4A and 4B illustrate a circuit configuration in the case where a scan line side driver circuit is formed using TFTs in an EL display panel of the present invention (buffer circuit). 2A and 2B illustrate a structure of a droplet discharge device that can be applied to the present invention. 4A and 4B illustrate a liquid crystal dropping injection method that can be applied to the present invention. Sectional drawing explaining the structural example of the liquid crystal display module of this invention. Sectional drawing of the display apparatus of this invention. 1A and 1B illustrate a structure of a laser beam direct drawing apparatus that can be applied to the present invention. The top view of the display apparatus of this invention. FIG. 3 shows an optical micrograph of the silver wiring produced in Example 1. The figure explaining this invention.

Claims (16)

Forming a first region having an object to be processed;
Modifying a part of the workpiece surface to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a conductive layer;
A method for manufacturing a wiring board, comprising removing a conductive layer formed in a part of the first region beyond the boundary line. Forming a first region having an object to be processed;
Modifying a part of the workpiece surface to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a conductive layer;
Bonding the adhesive surface of a substance having an adhesive surface to the conductive layer;
A method for manufacturing a wiring board, comprising: peeling off a substance having the adhesive surface and a conductive layer formed in a part of the first region beyond the boundary line. Forming a first region having an object to be processed;
A part of the surface of the object to be processed is modified by light irradiation to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a conductive layer;
A method for manufacturing a wiring board, comprising removing a conductive layer formed in a part of the first region beyond the boundary line. Forming a first region having an object to be processed;
A part of the surface of the object to be processed is modified by light irradiation to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a conductive layer;
Bonding the adhesive surface of a substance having an adhesive surface to the conductive layer;
A method for manufacturing a wiring board, comprising: peeling off a substance having the adhesive surface and a conductive layer formed in a part of the first region beyond the boundary line.   5. The method for manufacturing a wiring board according to claim 1, wherein the second region has higher adhesion to the conductive layer than the first region.   6. The method for manufacturing a wiring board according to claim 1, wherein the light uses a laser beam.   7. The method for manufacturing a wiring board according to claim 1, wherein the object to be processed is formed having a fluorine carbon chain. Forming a first region having an object to be processed;
Modifying a part of the workpiece surface to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a gate electrode layer;
A method for manufacturing a wiring board, comprising: removing a gate electrode layer formed in a part of the first region beyond the boundary line. Forming a first region having an object to be processed;
Modifying a part of the workpiece surface to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a gate electrode layer;
Bonding the adhesive surface of the substance having an adhesive surface to the gate electrode layer;
A method for manufacturing a wiring board, comprising: peeling off a substance having the adhesive surface and a gate electrode layer formed in a part of the first region beyond the boundary line. Forming a first region having an object to be processed;
A part of the surface of the object to be processed is modified by light irradiation to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a gate electrode layer;
A method for manufacturing a wiring board, comprising: removing a gate electrode layer formed in a part of the first region beyond the boundary line. Forming a first region having an object to be processed;
A part of the surface of the object to be processed is modified by light irradiation to form a second region having a boundary line with the first region;
Discharging a composition containing a conductive material continuously to a part of the first region and the second region beyond the boundary line;
Solidifying the composition to form a gate electrode layer;
Bonding the adhesive surface of the substance having an adhesive surface to the gate electrode layer;
A method for manufacturing a wiring board, comprising: peeling off a substance having the adhesive surface and a gate electrode layer formed in a part of the first region beyond the boundary line.   12. The method for manufacturing a thin film transistor according to claim 8, wherein the second region has higher adhesion to the gate electrode layer than the first region.   The method for manufacturing a thin film transistor according to claim 8, wherein the light is a laser beam.   14. The method for manufacturing a thin film transistor according to claim 8, wherein the object to be processed has a fluorine carbon chain. A thin film transistor manufactured according to any one of claims 8 to 14 is manufactured,
Forming a gate insulating layer on the gate electrode layer;
Forming a semiconductor layer on the gate insulating layer;
Forming a source electrode layer and a drain electrode layer on the semiconductor layer;
A manufacturing method of a display device, wherein a first electrode layer is formed in contact with the source electrode layer or the drain electrode layer. A method for manufacturing a television device, wherein a display screen is formed using the display device manufactured by the method according to claim 15.