JP2005338796A - Display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the following problems: When light generated in a light emitting layer of a display device is emitted through insulating films such as a planarizing film, an interlayer insulating film and a gate insulating film of a transistor, diffused reflection is caused due to slight-rough surfaces of the insulating films every time light passes through each insulating film, and further unnecessary light is caused, thus developing such problems that an outline of a pixel becomes indistinct, and a characteristic of the transistor is deteriorated. <P>SOLUTION: The display device includes a transistor formed over a substrate, an insulating film with a light shielding property formed on the transistor, and a light emitting element formed on the insulating film having the light shielding property, and is provided with an opening for passing the light from the light emitting element on the insulating film having the light shielding property. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a display device having a light emitting element.

In recent years, display devices having light emitting elements typified by EL (Electro Luminescence) elements (especially organic EL elements) have been developed, and have advantages such as high image quality, wide viewing angle, thinness, and light weight due to the self-luminous type. It is expected to be used widely. This light-emitting element has a configuration in which an anode, an electroluminescent layer, and a cathode are laminated on a substrate. For example, when the anode is on the substrate side, the anode is transparent, and light from the light-emitting layer is directed to the substrate side. A so-called bottom emission type display device that emits light is known (see Patent Document 1).
JP 2003-248440 A

When light from the light emitting layer is extracted to the substrate side, as shown in Patent Document 1, light is transmitted through an insulating film such as a planarization film, an interlayer insulating film, a gate insulating film of a transistor, and the like. Light is extracted outside the substrate. At this time, every time light passes through each insulating film, irregular reflection occurs due to delicate unevenness on the surface of the insulating film, and the light emission direction changes. As a result, stray light is generated and light leakage occurs from the light emitting region corresponding to one pixel to the non-light emitting region, so that the outline of the light emitting region corresponding to one pixel becomes unclear, or the active layer of the transistor (semiconductor As a result of light leaking into the layer, problems such as deterioration of transistor characteristics have occurred.

The above-mentioned problem is true not only for bottom emission (bottom emission) display devices but also for so-called dual emission (double emission) type display devices that extract light from the upper and lower surfaces of the light emitting layer.

For the above problems, the present invention absorbs stray light out of the light emitted from the light emitting layer, and suppresses adverse effects caused by stray light, for example, the blurred effect of the outline of the light emitting region corresponding to one pixel, An object is to provide a display device capable of displaying a high-definition image.

One embodiment of the display device according to the present invention includes a transistor provided over a substrate, a light-blocking insulating film provided over the transistor, and an opening through which light provided in the light-blocking insulating film passes. And a light emitting element provided above the opening.

  One of the display devices according to the present invention is a transistor provided over a substrate, a light-shielding insulating film provided over the transistor, and a light-emitting element provided over the light-shielding insulating film. The light-shielding insulating film is provided with an opening through which light from the light-emitting element passes.

That is, in order to prevent generation of stray light from the light emitting layer, a light shielding insulating film is provided over a substrate on which a transistor, a light emitting element, and the like are formed, and further, an opening is provided in the light shielding insulating film. A path for emitting light from the light emitting element is secured.

In the opening provided in the light-shielding insulating film, a light-transmitting insulating film may be formed and a light-emitting element may be formed, or a light-emitting element may be formed directly inside the opening. Also good. Further, the most basic structure of the light emitting element is a structure in which the electroluminescent layer is sandwiched between the pixel electrode and the counter electrode. Here, the pixel electrode is connected to the transistor, and light from the light-emitting layer is emitted to the transistor side, that is, the pixel electrode side. Therefore, the pixel electrode has translucency. It is said. By the above means, stray light from the light emitting layer can be prevented in the bottom emission type display device.

Further, the light-blocking insulating film may be formed so as to cover the transistor. Further, an organic material or an inorganic material functioning as a barrier layer may be formed over a transistor provided over a substrate with a single layer or a stacked structure. By these means, it is possible to prevent deterioration of the characteristics of the transistor for switching the light emitting element or supplying current.

In addition, according to one embodiment of the display device of the present invention, a transistor provided over a substrate, a light-blocking insulating film provided over the transistor, and light provided in the light-blocking insulating film are transmitted. A light-emitting element including a pixel electrode having a light-transmitting property, an electroluminescent layer, and a counter electrode having a light-transmitting property provided above the opening, and the pixel electrode, the electroluminescent layer, and the counter electrode A partition layer including a light-shielding film is provided in contact with at least one.

That is, in the dual emission type display device, in order to prevent stray light from the light emitting layer, a light shielding insulating film is provided on the substrate on which the transistor and the light emitting element are formed in the bottom emission direction, and further, the light shielding property is provided. By providing an opening in the insulating film, a path for emitting light is secured. On the other hand, a partition layer including a light-blocking film is selectively provided in the top emission direction, and a light-emitting element is formed at least in a region where the partition layer is not provided. The partition wall layer has a function of preventing stray light from the light emitting layer in top emission (top emission). Note that the partition layer can employ either a structure including only a light-shielding film or a structure including a light-transmitting film. Of course, this structure can be applied not only to a dual emission type but also to a top emission type display device.

In the opening provided in the light-shielding insulating film, a light-transmitting insulating film may be formed and a light-emitting element may be formed, or a light-emitting element may be formed directly inside the opening. Also good. Further, the most basic structure of the light emitting element is a structure in which the electroluminescent layer is sandwiched between the pixel electrode and the counter electrode. Here, since light from the light emitting layer is emitted to both sides of the pixel electrode and the counter electrode, the pixel electrode and the counter electrode have a light-transmitting property. By the above means, stray light from the light emitting layer can be prevented in the dual emission type display device.

Further, the light-blocking insulating film may be formed so as to cover the transistor. Further, an organic material or an inorganic material functioning as a barrier layer may be formed over a transistor provided over a substrate with a single layer or a stacked structure. By these means, it is possible to prevent deterioration of the characteristics of the transistor for switching the light emitting element or supplying current.

One embodiment of the display device according to the present invention is provided over a transistor provided over a substrate, a first insulating film having a light-shielding property provided over the transistor, and the first insulating film. A light-emitting element including a light-transmitting pixel electrode, an electroluminescent layer, and a light-transmitting counter electrode, and a light-blocking property provided in contact with at least one of the pixel electrode, the electroluminescent layer, and the counter electrode The first insulating film is provided with an opening through which light from the light-emitting element passes, and the opening includes a pigment and has a light-transmitting property. A second insulating film is provided. The pigment may be red, green, or blue.

The present invention absorbs stray light from the light-emitting layer by providing a light-blocking insulating film or a light-blocking partition layer in the direction in which light is emitted, and providing an opening for light to pass through them. Therefore, the influence of blurring the outline of the light emitting region corresponding to one pixel due to stray light can be suppressed. That is, since the insulating film or the partition layer having a light-blocking property absorbs stray light, the outline of the light-emitting region corresponding to one pixel becomes clear, and a high-definition image can be displayed. In addition, the influence of stray light can be suppressed by the arrangement of the light shielding film, and a reduction in size, weight, and thickness can be realized. In the case of the bottom emission type, the partition layer does not necessarily have a light shielding property.

In the case where an insulating film having a light-blocking property is formed so as to cover the transistor, deterioration of the characteristics of the transistor due to light leakage from the light-emitting layer can be prevented. In addition, when an organic material or an inorganic material that functions as a barrier layer is formed over a transistor provided over a substrate with a single layer or a stacked structure, mixing of impurities from the top of the transistor can be prevented. Again, deterioration of transistor characteristics can be prevented.

Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments and examples below. For example, it is possible to carry out by combining the following embodiments and characteristic portions of the examples. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.
(Embodiment 1)

The cross-sectional structure of the bottom emission type display device according to the present invention will be described roughly in four cases with reference to the drawings. Note that in this embodiment mode described below, the first insulating film 12 provided over a transistor and mainly having a barrier function is desirably formed as much as possible, but may be omitted. As described above, in the configuration of the present invention, when the first insulating film 12 is omitted, the “second insulating film 13” and the “third insulating film 14” described below are appropriately referred to as the “first insulating film”. Insulating film 13 ”and“ second insulating film 14 ”.

The display device having the first structure includes a transistor 11 having source / drain regions 15 and 16 provided on a substrate 10, a first insulating film 12 provided on the transistor 11, and a first insulating film 12. Provided in contact with the second insulating film 13 provided on the second insulating film 13 having a light shielding property, a first opening for allowing light to pass through the second insulating film 13, and the second insulating film 13 And a light emitting element provided over the third insulating film 14 (see FIG. 1A).

The substrate 10 is a substrate having an insulating surface made of glass, quartz, plastic, or the like. The transistor 11 is typically a field effect transistor and has three terminals of a gate electrode, a source electrode, and a drain electrode. As the field effect transistor, for example, a TFT (Thin Film Transistor) is used. The conductivity type of the transistor 11 is not limited, and either a P-channel type or an N-channel type may be used. Note that since the source electrode and the drain electrode are determined in accordance with the potential of the electrode, the source electrode or the drain electrode is hereinafter referred to as a source / drain electrode.

The first insulating film 12 includes a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen (SiO _x N _y film) (x> y) (x and y are positive integers), and a silicon nitride film containing oxygen (SiN _x O _y film) (x> y) (x and y are positive integers) and other inorganic materials. The first insulating film 12 also functions as a barrier film and prevents impurities from entering the transistor 11. It is desirable to form the first insulating film 12 as much as possible.
The second insulating film 13 is composed mainly of an organic material and has a light shielding property. The light-shielding film used for the second insulating film 13 is made of an organic resin material such as acrylic or polyimide or an organic material such as siloxane using a shaker or an ultrasonic vibrator. After adding and stirring the metal particles which have, it filters as needed and forms by a spin coat method after that. Note that in this specification, siloxane has a skeleton structure formed of a bond of silicon and oxygen, and has an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) as a substituent. Moreover, you may have a fluoro group further as a substituent. Further, when carbon or metal particles are added to the organic material, a surfactant, a dispersing agent, or the like may be added so as to be uniformly mixed. Moreover, when adding carbon, it is good to adjust the addition amount so that the density | concentration of a carbon particle may be 5 to 15% by weight percent. Further, the thin film formed by the spin coating method may be used as it is, but baking for the purpose of curing may be performed. The transmittance and reflectance of the thin film formed are both 0% or nearly 0%.

Here, the second insulating film 13 having a light shielding property is provided with a first opening for allowing light emitted from the electroluminescent layer 20 to be formed later to pass through. The first opening can be formed by etching the second insulating film 13 using a resist or the like. Alternatively, the first opening may be formed by selectively forming the second insulating film 13 by a droplet discharge method such as an inkjet method. Further, a third insulating film 14 is formed on the second insulating film 13 so as to fill the first opening. Note that the third insulating film 14 is made of a light-transmitting material. For example, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, or a heat-resistant organic resin such as siloxane can be used. The second insulating film 13 and the third insulating film 14 are both composed mainly of an organic resin, but the materials may be the same or different. These materials are not limited to the above.

The third insulating film 14 only needs to serve to fill at least the first opening provided in the second insulating film 13, and does not need to be formed on the entire surface of the second insulating film 13. . In the configuration shown in the drawing, a third insulating film 14 is formed on the entire surface of the second insulating film 13. As described above, when the third insulating film 14 is formed on the entire surface of the second insulating film 13, the third insulating film 14 is more insulative than the second insulating film 13 containing carbon particles or the like. Therefore, the current supplied from the transistor 11 can be prevented from leaking to other than the pixel electrode 19.
Note that when the third insulating film 14 is formed only in the first opening, a separate planarization process is performed so that the surfaces of the insulating films formed by the second and third insulating films have flatness. May be performed.

Note that in the above structure, a stacked film of three insulating films is provided; however, the present invention is not limited to this structure. Two layers of laminated films may be provided, or four or more laminated films may be provided. However, one of the laminated films is a barrier film made of an inorganic material, and one layer is a light-shielding film made of an organic material having an opening. The barrier film is provided so as to be in contact with the transistor 11.

As described above, by providing the light-blocking insulating film (the second insulating film 13 in FIG. 1A), light that becomes stray light out of the light emitted from the electroluminescent layer 20 can be obtained. The light is blocked and uniform light is supplied to the outside. The second insulating film 13 is preferably formed so as to completely cover the transistor 11. Accordingly, light leakage to the semiconductor layer of the transistor 11 can be prevented, and deterioration of transistor characteristics due to light can be prevented.

A second opening is provided in the first to third insulating films and the gate insulating film of the transistor, and source / drain wirings 17 and 18 are formed. Thereby, the transistor 11 and the pixel electrode 19 are connected. The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%. One of the characteristics of this material is that its electrical resistance value is as low as 3.0 to 5.0 Ωcm.

Here, when aluminum (hereinafter referred to as “Al”) is used as the source / drain wiring, there is a problem in that ITO as the pixel electrode comes into contact with Al and corrosion of Al occurs. However, even in such a case, by forming a laminated structure in which Al (or Al—Si alloy) is sandwiched between titanium (hereinafter referred to as “Ti”) or titanium nitride (TiN), Good contact can be obtained. For example, a structure in which Ti, Al, and Ti are stacked in this order from the substrate side may be used. On the other hand, since the oxidation-reduction potential of Al—C alloy or Al—C—Ni alloy is very close to that of a transparent conductive film such as ITO, even if it does not have a laminated structure (such as Ti or titanium nitride) Direct contact with ITO or the like is possible. The source / drain wirings 17 and 18 can be formed by sputtering using a target material made of the above alloy. Further, when etching the above alloy using a resist as a mask, it is preferable to perform the etching by wet etching. In this case, as the etchant, a mixed acid containing acetic acid, nitric acid, phosphoric acid, and water, or an alkaline developer can be used.

The source / drain wirings 17 and 18 are provided above the pixel electrode 19 or in the same layer as the pixel electrode 19. In the illustrated configuration, the source / drain wirings 17 and 18 are provided so as to run over the pixel electrode 19. That is, after the pixel electrode 19 is formed, the source / drain wirings 17 and 18 are formed. Note that a wiring connected to the source electrode of the transistor 11 is a source wiring and a wiring connected to the drain electrode of the transistor 11 is a drain wiring. As described above, the source electrode and the drain electrode of the transistor 11 Here, the source wiring or the drain wiring is referred to as a source / drain wiring because it is determined by the potential relationship.

Further, the display device having the above structure includes a partition wall layer 23 (also referred to as a bank or a bank) surrounding an end portion of the pixel electrode 19, an electroluminescent layer 20 provided so as to be in contact with the pixel electrode 19, and an electroluminescent layer 20. The counter electrode 21 is provided so as to be in contact with each other. Here, the pixel electrode 19 uses a light-transmitting material. For example, indium tin oxide (ITO), ITSO containing silicon oxide in ITO, zinc oxide (ZnO: Zinc Oxide), zinc oxide (GZO) added with gallium, 2-20 wt% in indium oxide For example, indium zinc oxide (IZO) formed using a target mixed with zinc oxide can be used.
A barrier layer such as silicon, silicon oxide, or silicon nitride may be sandwiched between the pixel electrode 19 and the electroluminescent layer 20. Thereby, luminous efficiency increases. On the other hand, the counter electrode 21 is preferably made of a material having reflectivity and a small work function. For example, Ca, Al, CaF, MgAg, AlLi, etc. can be used.

The side wall shape of the partition wall layer 23 is not particularly limited, but preferably has an S shape as shown in FIG. In other words, it is desirable to have a structure having an inflection point on the side surface of the partition wall layer 23. Thereby, the coverage of the electroluminescent layer 20 and the counter electrode 21 can be improved.

Note that the light emitting element 22 may be configured by a single layer or may be configured by stacking a plurality of layers. In the case of a plurality of layers, (1) an anode, a hole (hole) injection layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode, and (2) an anode in order from the transistor side (pixel electrode side) , Hole injection layer, light emitting layer, electron transport layer, cathode, (3) anode, hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, cathode, (4) anode, hole injection layer, hole Device structure such as transport layer, light emitting layer, hole blocking layer, electron transport layer, cathode, (5) anode, hole injection layer, hole transport layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, cathode, etc. do it. This is a so-called sequential structure, and the pixel electrode 19 functions as an anode (also referred to as a hole injection electrode).
On the other hand, when the cathode comes first when viewed from the transistor side (pixel electrode side), this is called reverse stacking, and the pixel electrode 19 functions as a cathode (also referred to as an electron injection electrode).

The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 21, and the structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 21 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted toward the pixel electrode 19 functioning as an anode, passes through the light-transmitting pixel electrode 19, and is emitted in the direction of the substrate 10 as indicated by an arrow. . That is, bottom emission (bottom emission) is performed.

The display device having the second configuration has a transistor 11 provided on the substrate 10, a first insulating film 12 provided on the transistor 11, and a light shielding property provided on the first insulating film 12. A second insulating film 13, a first opening for passing light provided in the second insulating film 13, and a third insulating film 14 provided in contact with the second insulating film 13 The light-emitting element 22 is provided over the third insulating film 14 (see FIG. 1B).

The outline of the configuration is almost the same as that of the display device of the first configuration, and can be configured using the same material. However, the difference is that the pixel electrode 19 is formed above the source / drain wiring 18. That is, the pixel electrode 19 is formed after the source / drain wirings 17 and 18 are formed.

Further, after forming the first opening for allowing the light from the electroluminescent layer 20 to pass through in the second insulating film 13, a resist or the like when the second insulating film 13 is further etched or remains. The gate insulating film 28 and the base insulating film 27 of the transistor 11 may be etched using the second insulating film 13 as a mask. Thereby, brighter light can be extracted from the electroluminescent layer 20. Note that the etching of the second insulating film 13, the gate insulating film 28, and the base insulating film 27 may be performed in the same process or in different processes. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl ₄ or CCl ₄ , a fluorine-based gas typified by CF ₄ , SF ₆ , NF ₃ , CHF ₃ , or the like, or O ₂ is used. Although it can be used, it is not limited to these. The etching may use atmospheric pressure plasma.

Further, the display device having the above structure includes a partition wall layer 23 surrounding an end portion of the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19, and a counter provided provided in contact with the electroluminescent layer 20. An electrode 21 is provided. The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 21, and the structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 21 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted toward the pixel electrode 19 functioning as an anode, passes through the light-transmitting pixel electrode 19, and is emitted in the direction of the substrate 10 as indicated by an arrow. . That is, bottom emission (bottom emission) is performed.

The display device having the third structure is provided on the transistor 11 provided on the substrate 10, the first insulating film 12 having a stacked structure provided on the transistor 11, and the first insulating film 12. The second insulating film 13 having a light shielding property, the opening for passing light provided in the second insulating film 13, and the first opening of the second insulating film 13 are provided in contact with each other. A third insulating film 14 and a light-emitting element 22 including a light-transmitting pixel electrode 19, an electroluminescent layer 20, and a counter electrode 21 provided on the third insulating film 14 are included. In addition, source / drain wirings 17 and 18 are formed through a second opening provided in the first insulating film 12. A pixel electrode 19 is formed through a third opening provided in the second insulating film 13 (see FIG. 1C).

Here, the first insulating film 12 has a laminated structure made of an inorganic material and functions as a barrier film. For example, it has a stacked structure of a silicon nitride film containing oxygen and a silicon oxide film containing nitrogen. Of course, the structure is not limited to this, and silicon nitride, silicon oxide, or the like can be used. Moreover, it is good also as a structure of three or more layers. However, one of the laminated films is preferably a barrier film made of an inorganic material. In particular, by using an inorganic material containing nitrogen (including a silicon nitride film containing oxygen and a silicon oxide film containing nitrogen), reduction of impurities mixed in the transistor can be expected. The second insulating film 13 is made of an organic material and has a light shielding property. As the light-shielding film used for the second insulating film 13, a material obtained by adding carbon or light-shielding metal particles to an organic material such as acrylic, polyimide, or siloxane is used. Two or more stacked films may be provided as the second insulating film 13, but one of the stacked films is a light-shielding film made of an organic material. Here, the second insulating film 13 having a light shielding property is provided with a first opening for allowing light emitted from the electroluminescent layer 20 to be formed later to pass through. Separately, a third opening in which the pixel electrode 19 is formed is formed in the second insulating film 13. It is desirable to form the first and third openings at the same time.

Further, a third insulating film 14 is formed so as to fill the first opening provided in the second insulating film 13. The third insulating film 14 is made of a light-transmitting material. For example, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, or a heat-resistant organic resin such as siloxane can be used. Note that the third insulating film 14 only needs to serve to fill at least the opening provided in the second insulating film 13, and does not need to be formed on the entire surface of the second insulating film 13. In the configuration shown in the drawing, the third insulating film 14 is formed only in the first opening provided in the second insulating film 13. As described above, when the third insulating film 14 is formed only in the opening, a separate planarization process is performed so that the surfaces of the insulating films formed by the second and third insulating films have flatness. You can go.

Openings are provided in the first to third insulating films and the gate insulating film of the transistor, and source / drain wirings 17 and 18 are formed. Thereby, the source / drain region 16 of the transistor 11 and the pixel electrode 19 are connected. The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%.

In addition, the pixel electrode 19 is connected to the source / drain wiring 18 through a third opening provided in the second insulating film 13. Note that the above-described Al—C alloy, Al—C—Ni alloy, and the like are also characterized by excellent reflectivity. However, it can be employed as the pixel electrode 19 by thinning it to such an extent that it has translucency. In this case, the material can be the same as that of the source / drain wiring, and the contact is further improved.

Further, the display device having the above structure includes a partition wall layer 23 surrounding an end portion of the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19, and a counter provided provided in contact with the electroluminescent layer 20. An electrode 21 is provided. The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 21, and the structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 21 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted to the pixel electrode 19 functioning as an anode. That is, bottom emission is performed.

The display device having the fourth structure has a transistor 11 provided on the substrate 10, a first insulating film 12 provided on the transistor 11, and a light shielding property provided on the first insulating film 12. A second insulating film 13, a first opening for passing light provided in the second insulating film 13, and a third insulating film 14 provided in contact with the second insulating film 13 And a light-emitting element 22 including a light-transmitting pixel electrode 19, an electroluminescent layer 20, and a counter electrode 21 provided on the third insulating film 14. In addition, source / drain wirings 17 and 18 are formed through second openings provided in the first insulating film 12 and the second insulating film 13. Further, a connection wiring 24 is formed through a third opening provided in the third insulating film 14, and a pixel electrode 19 is formed in contact with the connection wiring 24 (FIG. 1D). )reference).

Here, the first insulating film 12 is made of an inorganic material and functions as a barrier film. For example, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen, a silicon oxide film containing nitrogen, or the like is used. The first insulating film 12 may have a laminated structure, but one of the laminated films is preferably a barrier film made of an inorganic material. The second insulating film 13 is made of an organic material and has a light shielding property. As the light-shielding film used for the second insulating film 13, a material obtained by adding carbon or light-shielding metal particles to an organic material such as acrylic, polyimide, or siloxane is used. Here, the second insulating film 13 having a light shielding property is provided with a first opening for allowing light emitted from the electroluminescent layer 20 to be formed later to pass through. Separately, the second insulating film 13 is formed with a second opening in which source / drain wiring is formed. It is desirable to form the first and second openings at the same time. Two or more stacked films may be provided as the second insulating film 13, but one of the stacked films is a light-shielding film made of an organic material.

Further, after forming the first opening for allowing the light from the electroluminescent layer 20 to pass through in the second insulating film 13, a resist or the like when the second insulating film 13 is further etched or remains. The gate insulating film 28 and the base insulating film 27 of the transistor 11 may be etched using the second insulating film 13 as a mask. Thereby, brighter light can be extracted from the electroluminescent layer 20. Note that the etching of the second insulating film 13, the gate insulating film 28, and the base insulating film 27 may be performed in the same process or in different processes.

A third insulating film 14 is formed on the source / drain wirings 17 and 18 and the second insulating film 13. The third insulating film 14 is made of a light-transmitting material. For example, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, or a heat-resistant organic resin such as siloxane can be used. The third insulating film 14 may have a stacked structure as long as a light-transmitting material is used.

The third insulating film 14 is provided with a third opening, and a connection wiring 24 connected to the source / drain wiring 18 is formed. Further, the pixel electrode 19 is formed on the connection wiring 24. The stacking order of the connection wiring 24 and the pixel electrode 19 is not limited to the illustrated one. Further, in the illustrated configuration, the source / drain wiring 18 and the pixel electrode 19 are connected via the connection wiring 24, but the opening provided in the third insulating film 14 is the same as in the third configuration. Alternatively, the source / drain wiring 18 and the pixel electrode 19 may be directly connected to each other.

The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%. A similar material can be used for the connection wiring 24.

Further, the display device having the above structure includes a partition wall layer 23 surrounding an end portion of the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19, and a counter provided provided in contact with the electroluminescent layer 20. An electrode 21 is provided. The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 21, and the structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 21 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted to the pixel electrode 19 functioning as an anode. That is, bottom emission is performed.

The bottom emission type display device having the first to fourth configurations shown in FIGS. 1A to 1D described above corresponds to one pixel due to stray light due to the provision of an insulating film having a light shielding property. It is possible to suppress the influence that the outline of the light emitting area to be blurred is blurred. That is, since the insulating film having a light shielding property absorbs stray light, the outline of the light emitting region corresponding to one pixel becomes clear, and a high-definition image can be displayed. In addition, the influence of stray light can be suppressed by the arrangement of the light shielding film, and a reduction in size, weight, and thickness can be realized.
(Embodiment 2)

The cross-sectional structure of a dual emission type display device according to the present invention will be described roughly in four cases with reference to the drawings. Note that in this embodiment mode, the first insulating film 12 mainly having a barrier function provided over the transistor is preferably formed as much as possible, but may be omitted. As described above, in the configuration of the present invention, when the first insulating film 12 is omitted, the “second insulating film 13” and the “third insulating film 14” described below are appropriately referred to as the “first insulating film”. Insulating film 13 ”and“ second insulating film 14 ”.

The display device having the fifth configuration has a transistor 11 provided on the substrate 10, a first insulating film 12 provided on the transistor 11, and a light-shielding property provided on the first insulating film 12. A second insulating film 13, a first opening for passing light provided in the second insulating film 13, and a third insulating film 14 provided in contact with the second insulating film 13 The light-emitting element 22 including the translucent pixel electrode 19, the electroluminescent layer 20, and the translucent counter electrode 25 provided on the third insulating film 14, the pixel electrode 19, and the electroluminescent layer 20. And a partition layer including a light-shielding film 26 provided in contact with at least one of the counter electrodes 25 (see FIG. 2A).

The substrate 10 is a substrate having an insulating surface made of glass, quartz, plastic, or the like. The transistor 11 is a field effect transistor and has three terminals of a gate electrode, a source electrode, and a drain electrode. The conductivity type of the transistor 11 is not limited, and either a P-channel type or an N-channel type may be used.

The first insulating film 12 is made of an inorganic material such as a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, or a silicon nitride film containing oxygen. The first insulating film 12 also functions as a barrier film and prevents impurities from entering the transistor 11. The second insulating film 13 is composed mainly of an organic material and has a light shielding property. The light-shielding film used for the second insulating film 13 is made of an organic resin material such as acrylic or polyimide or an organic material such as siloxane using a shaker or an ultrasonic vibrator. After adding and stirring the metal particles which have, it filters as needed and forms by a spin coat method after that. In addition, when adding carbon particles or metal particles to the organic material, a surfactant, a dispersant, or the like may be added so that they are uniformly mixed. Moreover, when adding carbon particles, it is good to adjust the addition amount so that the density | concentration of carbon particles may be 5 to 15% by weight percent. Further, the thin film formed by the spin coating method may be used as it is, but baking for the purpose of curing may be performed. The transmittance and reflectance of the thin film formed are both 0% or nearly 0%.

Here, the second insulating film 13 having a light shielding property is provided with a first opening for allowing light emitted from the electroluminescent layer 20 to be formed later to pass through. The first opening can be formed by etching the second insulating film 13 using a resist or the like. Alternatively, the first opening may be formed by selectively forming the second insulating film 13 by a droplet discharge method such as an inkjet method.

Further, after forming the first opening for allowing the light from the electroluminescent layer 20 to pass through in the second insulating film 13, a resist or the like when the second insulating film 13 is further etched or remains. The gate insulating film 28 and the base insulating film 27 of the transistor 11 may be etched using the second insulating film 13 as a mask. Thereby, brighter light can be extracted from the electroluminescent layer 20. Note that the etching of the second insulating film 13, the gate insulating film 28, and the base insulating film 27 may be performed in the same process or in different processes.

Further, a third insulating film 14 is formed on the second insulating film 13 so as to fill the first opening. Note that the third insulating film 14 is made of a light-transmitting material. For example, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, or a heat-resistant organic resin such as siloxane can be used. Note that the second insulating film 13 and the third insulating film 14 are both composed mainly of an organic resin, but the materials thereof may be the same or different. These materials are not limited to the above. The third insulating film 14 only needs to serve to fill at least the first opening provided in the second insulating film 13, and does not need to be formed on the entire surface of the second insulating film 13. . In the configuration shown in the drawing, a third insulating film 14 is formed on the entire surface of the second insulating film 13. As described above, when the third insulating film 14 is formed on the entire surface of the second insulating film 13, the third insulating film 14 is more insulative than the second insulating film 13 containing carbon particles or the like. Therefore, the current supplied from the transistor 11 can be prevented from leaking to other than the pixel electrode 19. Note that when the third insulating film 14 is formed only in the first opening, a separate planarization process is performed so that the surfaces of the insulating films formed by the second and third insulating films have flatness. May be performed.

Note that in the above structure, a stacked film of three insulating films is provided; however, the present invention is not limited to this structure. Two layers of laminated films may be provided, or four or more laminated films may be provided. However, one of the laminated films is a barrier film made of an inorganic material, and one layer is a light-shielding film made of an organic material having an opening. The barrier film is provided so as to be in contact with the transistor 11.

As described above, by providing the light-blocking insulating film (the second insulating film 13 in FIG. 2A), light that becomes stray light out of the light emitted from the electroluminescent layer 20 can be obtained. The light is blocked and uniform light is supplied to the outside. The second insulating film 13 is preferably formed so as to completely cover the transistor 11. Accordingly, light leakage to the semiconductor layer of the transistor 11 can be prevented, and deterioration of transistor characteristics due to light can be prevented.

A second opening is provided in the first to third insulating films and the gate insulating film of the transistor, and source / drain wirings 17 and 18 are formed. Thereby, the transistor 11 and the pixel electrode 19 are connected. The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%. The source / drain wirings 17 and 18 are provided above the pixel electrode 19 or in the same layer as the pixel electrode 19. In the illustrated configuration, the source / drain wirings 17 and 18 are provided so as to run over the pixel electrode 19. That is, after the pixel electrode 19 is formed, the source / drain wirings 17 and 18 are formed.

Further, the display device having the above structure includes a partition layer surrounding the end of the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19, and a counter electrode provided in contact with the electroluminescent layer 20. 25. Here, as the partition wall, a light-transmitting partition layer 23 and a light-blocking partition layer 26 are stacked (FIG. 2A). In addition, the order of both the partition layers is not limited to the illustrated one. The partition layer 23 may also be a partition layer having a light shielding property. Further, a structure having only one barrier layer 26 having a light shielding property may be used. The partition layers 23 and 26 are provided with a third opening for forming the electroluminescent layer 20. The third opening can be formed by etching the partition layers 23 and 26 using a resist or the like. Alternatively, the third opening may be formed by selectively forming the partition layers 23 and 26 by a droplet discharge method such as an inkjet method.

As the light-transmitting partition wall layer 23, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, a heat-resistant organic resin such as siloxane, or a transparent inorganic material can be used. As the partition wall layer 26 having a light shielding property, a material obtained by adding carbon particles or metal particles to an organic resin material such as acrylic or polyimide or an organic material such as siloxane can be used. However, it is desirable that a partition layer containing carbon or metal particles is not provided as much as possible in a portion in contact with the source / drain wirings 17 and 18 and the pixel electrode 19 in order to prevent current leakage. That is, as shown in the figure, it is desirable to form the light-blocking partition layer 26 after providing an organic material or an inorganic material having high insulating properties and translucency. In any case, in the dual emission type display device according to the present invention, when the light-blocking partition wall layer 26 is used, stray light out of the light emitted from the top surface can be absorbed. It is possible to suppress the effect of blurring the outline of the image. That is, since the partition wall layer having a light-shielding property absorbs stray light, the contour between pixels becomes clear and a high-definition image can be displayed. In addition, the influence of stray light can be suppressed by the arrangement of the light shielding film, and a reduction in size, weight, and thickness can be realized.

Here, the pixel electrode 19 uses a light-transmitting material. For example, ITO, ITSO, ZnO, GZO, IZO, or the like can be used. A barrier layer such as silicon, silicon oxide, or silicon nitride may be sandwiched between the pixel electrode 19 and the electroluminescent layer 20. Thereby, luminous efficiency increases. On the other hand, as the counter electrode 25, an aluminum thin film having a thickness of 1 to 10 nm, an aluminum film containing a small amount of Li, or the like can be used to transmit light from the light emitting layer.

The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 25. The structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 25 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted to both sides of the pixel electrode 19 and the counter electrode 25, is transmitted through both electrodes having translucency, and is emitted as indicated by arrows. That is, double-sided emission (dual emission) is performed.

A reverse stacking structure in which the pixel electrode 19 functions as a cathode and the counter electrode 25 functions as an anode and the electroluminescent layer 20 is sandwiched therebetween may be employed. In this case, as the pixel electrode 19, an aluminum thin film having a thickness of 1 to 10 nm, an aluminum film containing a small amount of Li, or the like can be used so as to transmit light from the light emitting layer. On the other hand, as the counter electrode 25, ITO, ITSO, ZnO, GZO, IZO or the like can be used. In this case, the polarity of the transistors may be opposite to that in the case of stacking. Even when the reverse stacking structure is adopted, since the electrodes on both sides of the electroluminescent layer 20 have translucency, a dual emission light emitting device can be realized.

The display device having the sixth structure has a transistor 11 provided over the substrate 10, a first insulating film 12 provided over the transistor 11, and a light-shielding property provided over the first insulating film 12. A second insulating film 13, a first opening for passing light provided in the second insulating film 13, and a third insulating film 14 provided in contact with the second insulating film 13 The light-emitting element 22 including the translucent pixel electrode 19, the electroluminescent layer 20, and the translucent counter electrode 25 provided on the third insulating film 14, the pixel electrode 19, and the electroluminescent layer 20. And a partition layer including a light-shielding film provided in contact with at least one of the counter electrodes 25 (see FIG. 2B).

The outline of the configuration is almost the same as that of the display device of the fifth configuration, and can be configured using the same material. However, the difference is that the pixel electrode 19 is formed above the source / drain wiring 18. That is, the pixel electrode 19 is formed after the source / drain wirings 17 and 18 are formed.

In the display device having the above structure, the partition layer 23 surrounding the end of the pixel electrode 19 and the partition layer 26 having a light shielding property, the electroluminescent layer 20 provided so as to be in contact with the pixel electrode 19, and the electroluminescent layer 20 The counter electrode 25 is provided so as to be in contact with. Here, as the partition layer, a light-transmitting partition layer 23 and a light-blocking partition layer 26 are stacked. The partition layer 26 having a light shielding property is formed not only on the top surface of the partition layer 23 but also on the side surfaces thereof (FIG. 2B). An example of a method having the illustrated configuration will be described. First, the partition layer 23 is selectively formed by patterning using a resist or the like or a droplet discharge method, and then a partition layer 26 having a light shielding property is formed on the entire surface of the pixel electrode 19 and the partition layer 23. Thereafter, the partition wall layer 26 having a light-shielding property is formed by patterning so that a part of the partition wall layer 26 remains on the side surface of the partition wall layer 23. In addition, the order of both the partition layers is not limited to the illustrated one. The partition layer 23 may also be a partition layer having a light shielding property. Further, a structure having only one barrier layer 26 having a light shielding property may be used.

As the light-transmitting partition wall layer 23, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, a heat-resistant organic resin such as siloxane, or a transparent inorganic material can be used. As the light-blocking partition layer, a material obtained by adding carbon or light-shielding metal particles to an organic resin material such as acrylic or polyimide or an organic material such as siloxane can be used. However, it is desirable that a partition layer containing carbon or metal particles is not provided as much as possible in a portion in contact with the source / drain wirings 17 and 18 and the pixel electrode 19 in order to prevent current leakage. That is, as shown in the figure, it is desirable to form the light-blocking partition layer 26 after providing an organic material or an inorganic material having high insulating properties and translucency. In any case, in the dual emission type display device according to the present invention, when the light-blocking partition wall layer 26 is used, stray light out of the light emitted from the top surface can be absorbed. It is possible to suppress the effect of blurring the outline of the image. That is, since the partition wall layer having a light-shielding property absorbs stray light, the contour between pixels becomes clear and a high-definition image can be displayed. In addition, the influence of stray light can be suppressed by the arrangement of the light shielding film, and a reduction in size, weight, and thickness can be realized.

The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 25. The structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 25 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted to both sides of the pixel electrode 19 and the counter electrode 25, is transmitted through both electrodes having translucency, and is emitted as indicated by arrows. That is, double-sided emission (dual emission) is performed.

A reverse stacking structure in which the pixel electrode 19 functions as a cathode and the counter electrode 25 functions as an anode and the electroluminescent layer 20 is sandwiched therebetween may be employed. In this case, the polarity of the transistors may be opposite to that in the case of stacking. Even when the reverse stacking structure is adopted, since the electrodes on both sides of the electroluminescent layer 20 have translucency, a dual emission light emitting device can be realized.

The display device having the seventh structure has a transistor 11 provided on the substrate 10, a first insulating film 12 provided on the transistor 11, and a light shielding property provided on the first insulating film 12. The second insulating film 13, the first opening for passing light provided in the second insulating film 13, and the third insulating provided in contact with the opening of the second insulating film 13 A light-emitting element 22 including a light-transmitting pixel electrode 19, an electroluminescent layer 20, and a light-transmitting counter electrode 25 provided on the third insulating film 14, the pixel electrode 19, and the electric field; A partition layer including a light-shielding film provided in contact with at least one of the light-emitting layer 20 and the counter electrode 25 is provided. In addition, source / drain wirings 17 and 18 are formed through a second opening provided in the first insulating film 12. A pixel electrode 19 is formed through a third opening provided in the second insulating film 13 (see FIG. 2C).

Here, the first insulating film 12 has a laminated structure made of an inorganic material and functions as a barrier film. For example, it has a stacked structure of a silicon nitride film containing oxygen and a silicon oxide film containing nitrogen. Of course, the structure is not limited to this, and silicon nitride, silicon oxide, or the like can be used. Moreover, it is good also as a structure of three or more layers. However, one of the laminated films is preferably a barrier film made of an inorganic material. In particular, by using an inorganic material containing nitrogen (including a silicon nitride film containing oxygen and a silicon oxide film containing nitrogen), reduction of impurities mixed in the transistor can be expected. The second insulating film 13 is made of an organic material and has a light shielding property. As the light-shielding film used for the second insulating film 13, a material obtained by adding carbon or light-shielding metal particles to an organic material such as acrylic, polyimide, or siloxane is used. Two or more stacked films may be provided as the second insulating film 13, but one of the stacked films is a light-shielding film made of an organic material. Here, the second insulating film 13 having a light shielding property is provided with a first opening for allowing light emitted from the electroluminescent layer 20 to be formed later to pass through. Separately, a third opening in which the pixel electrode 19 is formed is formed in the second insulating film 13. It is desirable to form the first and third openings at the same time. Further, a third insulating film 14 is formed so as to fill the first opening formed in the second insulating film 13. The third insulating film 14 is made of a light-transmitting material. For example, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, or a heat-resistant organic resin such as siloxane can be used. The third insulating film 14 only needs to play a role of filling at least the first opening provided in the second insulating film 13, and needs to be formed on the entire surface of the second insulating film 13. There is no. In the configuration shown in the drawing, the third insulating film 14 is formed only in the first opening of the second insulating film 13. Thus, when the third insulating film 14 is formed only in the first opening, the surface of the insulating film formed by the second and third insulating films is separately flat so as to have flatness. Processing may be performed.

The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%.

Further, the display device having the above structure includes a partition wall layer 23 surrounding an end portion of the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19, and a counter provided provided in contact with the electroluminescent layer 20. An electrode 25 is provided. The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 25. The structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 25 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted to both sides of the pixel electrode 19 and the counter electrode 25, is transmitted through both electrodes having translucency, and is emitted as indicated by arrows. That is, double-sided emission (dual emission) is performed. In the configuration shown in the figure, a transparent organic material is used for the partition wall layer 23. However, as in the fifth or sixth configuration, a stacked structure with a light-blocking organic resin may be used.

A reverse stacking structure in which the pixel electrode 19 functions as a cathode and the counter electrode 25 functions as an anode and the electroluminescent layer 20 is sandwiched therebetween may be employed. In this case, the polarity of the transistors in the case of stacking may be reversed. Even when the reverse stacking structure is adopted, since the electrodes on both sides of the electroluminescent layer 20 have translucency, a dual emission light emitting device can be realized.

The display device having the eighth configuration has a transistor 11 provided on the substrate 10, a first insulating film 12 provided on the transistor 11, and a light-shielding property provided on the first insulating film 12. A second insulating film 13, a first opening for passing light provided in the second insulating film 13, and a third insulating film 14 provided in contact with the second insulating film 13 The light-emitting element 22 including the translucent pixel electrode 19, the electroluminescent layer 20, and the translucent counter electrode 25 provided on the third insulating film 14, the pixel electrode 19, and the electroluminescent layer 20. And a partition layer including a light-shielding film provided in contact with at least one of the counter electrodes 25. In addition, source / drain wirings 17 and 18 are formed through second openings provided in the first insulating film 12 and the second insulating film 13. Further, a connection wiring 24 is formed through a third opening provided in the third insulating film 14, and a pixel electrode 19 is formed in contact with the connection wiring 24 (FIG. 2D). )reference).

Here, the first insulating film 12 is made of an inorganic material and functions as a barrier film. For example, a silicon nitride film, a silicon oxide film, a silicon nitride film containing oxygen, a silicon oxide film containing nitrogen, or the like is used. The first insulating film 12 may have a laminated structure, but one of the laminated films is preferably a barrier film made of an inorganic material. The second insulating film 13 is made of an organic material and has a light shielding property. Two or more stacked films may be provided as the second insulating film 13, but one of the stacked films is a light-shielding film made of an organic material. As the light-shielding film used for the second insulating film 13, a material obtained by adding carbon or light-shielding metal particles to an organic material such as acrylic, polyimide, or siloxane is used. Here, the second insulating film 13 having a light shielding property is provided with a first opening for allowing light emitted from the electroluminescent layer 20 to be formed later to pass through. Separately, the second insulating film 13 is formed with a second opening in which source / drain wiring is formed. It is desirable to form the first and second openings at the same time. Two or more stacked films may be provided as the second insulating film 13, but one of the stacked films is a light-shielding film made of an organic material. A third insulating film 14 is formed on the source / drain wirings 17 and 18 and the second insulating film 13. The third insulating film 14 is made of a light-transmitting material. For example, a photosensitive or non-photosensitive organic material such as polyimide, acrylic, or polyamide, or a heat-resistant organic resin such as siloxane can be used. The third insulating film 14 may have a stacked structure as long as a light-transmitting material is used.

The third insulating film 14 is provided with a third opening, and a connection wiring 24 connected to the source / drain wiring 18 is formed. Further, the pixel electrode 19 is formed on the connection wiring 24. The stacking order of the connection wiring 24 and the pixel electrode 19 is not limited to the illustrated one. In the illustrated configuration, the source / drain wiring 18 and the pixel electrode 19 are connected via the connection wiring 24. However, as in the third configuration, the third insulating film 14 provided on the third insulating film 14 is connected. The source / drain wiring 18 and the pixel electrode 19 may be directly connected through the opening.

The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%. A similar material can be used for the connection wiring 24.

Further, the display device having the above structure includes a partition wall layer 23 surrounding an end portion of the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19, and a counter provided provided in contact with the electroluminescent layer 20. An electrode 25 is provided. The light-emitting element 22 corresponds to a stacked body of the pixel electrode 19, the electroluminescent layer 20, and the counter electrode 25. The structure of the illustrated light-emitting element 22 functions as the pixel electrode 19, the electroluminescent layer 20, and the cathode that function as an anode. A progressive stacking structure in which the counter electrodes 25 are sequentially stacked is adopted. In this case, the light emitted from the light emitting element 22 is emitted to both sides of the pixel electrode 19 and the counter electrode 25, is transmitted through both electrodes having translucency, and is emitted as indicated by arrows. That is, double-sided emission (dual emission) is performed. In the configuration shown in the figure, a transparent organic material is used for the partition wall layer 23. However, as in the fifth or sixth configuration, a stacked structure with a light-blocking organic resin may be used.

A reverse stacking structure in which the pixel electrode 19 functions as a cathode and the counter electrode 25 functions as an anode and the electroluminescent layer 20 is sandwiched therebetween may be employed. In this case, the polarity of the transistors in the case of stacking may be reversed. Even when the reverse stacking structure is adopted, since the electrodes on both sides of the electroluminescent layer 20 have translucency, a dual emission light emitting device can be realized.

Note that, according to the seventh structure (see FIG. 2C), the first insulating film 12 is provided over the transistor 11, the second insulating film 13 is provided over the second insulating film 12, and the first A third insulating film 14 is provided in contact with the second insulating film 13, and a pixel electrode 19 connected to the source / drain wiring 18 is provided through an opening provided in the second insulating film 13. Further, according to the structure shown in the eighth structure (see FIG. 2D), the first insulating film 12 is provided over the transistor 11, and the second insulating film 13 is formed over the first insulating film 12. The third insulating film 14 is provided on the second insulating film 13, and the connection wiring 24 connected to the source / drain wiring 18 through the third opening provided in the third insulating film 14 is provided. The pixel electrode 19 is provided in contact with the connection wiring 24. Alternatively, the pixel electrode 19 directly connected to the source / drain wiring 18 is provided through the third opening provided in the third insulating film 14 without providing the connection wiring 24. With this configuration, the region where the pixel electrode 19 is provided is not limited to the region where the source / drain wirings 17 and 18 are disposed. That is, since the margin of the region where the pixel electrode 19 is provided is widened, it is possible to improve the aperture ratio of the top emission among the double emission. In addition, when a high aperture ratio is realized, the driving voltage can be lowered and the power consumption can be reduced as the area for emitting light increases.

In the dual emission type display device having the fifth to eighth configurations shown in FIGS. 2A to 2D described above, an insulating film having a light-shielding property is provided on at least the bottom emission side. In addition, the influence of blurring of the contour between pixels due to stray light can be suppressed. That is, since the insulating film having a light-shielding property absorbs stray light, the contour between pixels becomes clear and a high-definition image can be displayed. Of course, since the present invention is a dual emission type display device, it is desirable to provide an insulating film (in this case, a partition wall layer 26) having a light shielding property on the side from which light is emitted from the top surface to cut off stray light. This structure can of course be applied not only to a dual emission type but also to a top emission type display device. In this case, the substrate 10 is a substrate having an insulating surface made of glass, quartz, plastic or the like as described above. In addition, a silicon substrate or a metal substrate can be used. As described above, according to the present invention, the influence of stray light can be suppressed by the arrangement of the light-shielding film, and a reduction in size, weight, and thickness can be realized.

The structure of the display device of the present invention will be described with reference to the drawings. The display device of the present invention includes a plurality of elements in a region where the source line Sx (x is a natural number, 1 ≦ x ≦ m) and the gate line Gy (y is a natural number, 1 ≦ y ≦ n) intersect via an insulator. A plurality of pixels 310 including the pixel (see FIG. 3A). The pixel 310 includes a light-emitting element 313, a capacitor 316, and two transistors. Of the two transistors, one is a switching transistor 311 that controls input of a video signal to the pixel 310, and the other is a driving transistor 312 that controls light emission and non-light emission of the light emitting element 313. The capacitor 316 has a function of holding the gate-source voltage of the transistor 312. Further, the capacitor 316 can be omitted. That is, the gate capacitance of the transistor 312 can be substituted. Regarding the gate capacitance of the transistor 312, the capacitance may be formed in a region where the source region, the drain region, the LDD region, and the like overlap with the gate electrode, or between the channel region and the gate electrode. A gate capacitor may be formed between them.

The gate electrode of the transistor 311 is connected to the gate line Gy, one of the source electrode and the drain electrode is connected to the source line Sx, and the other is connected to the gate electrode of the transistor 312. One of a source electrode and a drain electrode of the transistor 312 is connected to the first power supply 317 through a power supply line Vx (x is a natural number, 1 ≦ x ≦ l), and the other is connected to a pixel electrode of the light emitting element 313. The counter electrode of the light emitting element 313 is connected to the second power source 318. The capacitor 316 is provided between the gate electrode and the source electrode of the transistor 312. The conductivity types of the transistors 311 and 312 may be either N-type or P-type. However, in the illustrated structure, the transistor 311 is N-type and the transistor 312 is P-type. The potential of the first power source 317 and the potential of the second power source 318 are not particularly limited, but are set to different potentials so that a forward bias voltage or a reverse bias voltage is applied to the light emitting element 313.

A semiconductor included in the transistors 311 and 312 may be any of an amorphous semiconductor (amorphous silicon), a microcrystalline semiconductor, a crystalline semiconductor, an organic semiconductor, and the like. The microcrystalline semiconductor is formed by using silane gas (SiH ₄ ) and fluorine gas (F ₂ ), by using silane gas and hydrogen gas, or after forming a thin film by using the gas mentioned above, You may form by irradiating. The gate electrodes of the transistors 311 and 312 are formed as a single layer or stacked layers using a conductive material. For example, a structure in which tungsten (W) and tungsten nitride (WN) are sequentially stacked from the substrate side where the pixel 310 is provided, or molybdenum (Mo), aluminum (Al), Mo, or Mo, molybdenum nitride (Mo A structure in which MoN) is sequentially laminated may be employed.

Next, FIG. 4 shows a layout of the pixel 310 having the above structure. In this layout, the transistors 311 and 312, the capacitor 316, and the pixel electrode 319 of the light emitting element 313 are shown.

Next, FIG. 3B shows a cross-sectional structure corresponding to the chain lines AB and B′-C in this layout. Transistors 311 and 312, a light-emitting element 313, and a capacitor 316 are provided over a substrate 320 having an insulating surface such as glass or quartz. As the substrate 320, a glass substrate, a quartz substrate, a substrate formed of an insulating material such as alumina, a plastic substrate having heat resistance that can withstand a processing temperature in a later process, or the like can be used. As shown in FIGS. 1 and 2, a base insulating film 27 may be formed.

Further, FIG. 5 shows a layout of the partition layer 332 provided between the adjacent pixels 310. The size of the partition layer 332 is preferably a width that can hide the wiring provided in the lower portion thereof. The length in the column direction (vertical direction) of the pixel 310 of the layout shown in the drawing is indicated by a width 338, and the length in the row direction (lateral direction) is indicated by a width 337.

Next, examples of pixel circuits applicable to the present invention other than the pixel circuit shown in FIG. 3A will be described with reference to the drawings. FIG. 6A illustrates a pixel circuit in which an erasing transistor 340 and an erasing gate line Ry are newly provided in the pixel 310 illustrated in FIG. The arrangement of the transistor 340 can forcibly create a state in which no current flows to the light-emitting element 313. Therefore, without waiting for signal writing to all the pixels 310, the lighting period can be set at the same time or immediately after the start of the writing period. Can start. Therefore, the duty ratio is improved, and moving images can be displayed particularly well.

6B, the transistor 312 of the pixel 310 illustrated in FIG. 3A is deleted, and transistors 341 and 342 and a power supply line Vax (x is a natural number, 1 ≦ x ≦ k) are newly provided. Pixel circuit. The power supply line Vax is connected to the power supply 343. In this configuration, the potential of the gate electrode of the transistor 341 is fixed by operating the transistor 341 in the saturation region by connecting the gate electrode of the transistor 341 to the power supply line Vax held at a constant potential. Further, the transistor 342 is operated in a linear region, and a video signal including information on lighting or non-lighting of a pixel is input to a gate electrode thereof. Since the value of the source-drain voltage of the transistor 342 operating in the linear region is small, a slight change in the gate-source voltage of the transistor 342 does not affect the value of the current flowing through the light-emitting element 313. Accordingly, the value of the current flowing through the light emitting element 313 is determined by the transistor 341 operating in the saturation region. In the present invention having the above structure, luminance unevenness of the light-emitting element 313 due to variation in characteristics of the transistor 341 can be improved and image quality can be improved. This embodiment can be freely combined with the above embodiment mode and other embodiments.

A panel which is an embodiment of the display device of the present invention will be described. A display region 400 including a plurality of pixels including a light-emitting element, a gate driver 401, a gate driver 402, a source driver 403, and a connection film 407 such as an FPC are provided over the substrate 405 (see FIG. 7A). The connection film 407 is connected to an IC chip or the like.

FIG. 7B is a cross-sectional view taken along the line AB of the panel, and shows a transistor 412 and a light-emitting element 413 provided in the display region 400 and an element group 410 provided in the source driver 403. Reference numeral 414 denotes a capacitor. A sealant 408 is provided around the display region 400, the gate drivers 401 and 402, and the source driver 403, and the light-emitting element 413 is sealed with the sealant 408 and the counter substrate 406. This sealing process is a process for protecting the light-emitting element 413 from moisture. Here, a method of sealing with a cover material (glass, ceramics, plastic, metal, or the like) is used, but a thermosetting resin or ultraviolet light is used. A method of sealing with a curable resin or a method of sealing with a thin film having a high barrier ability such as a metal oxide or a nitride may be used. Further, in the light emitting element 413, the counter electrode 19 is connected to the second power source 318 in the first embodiment. The element formed over the substrate 405 is preferably formed using a crystalline semiconductor (polysilicon) having favorable characteristics such as mobility as compared to an amorphous semiconductor. Realized. Since the number of external ICs to be connected is reduced, the panel having the above-described configuration can be reduced in size, weight, and thickness.

Note that the display region 400 may be formed using a transistor using an amorphous semiconductor (amorphous silicon) formed over an insulating surface as a channel portion, and the gate drivers 401 and 402 and the source driver 403 may be formed using an IC chip. The IC chip may be bonded onto the substrate 405 by a COG method, or may be bonded to the connection film 407 connected to the substrate 405. An amorphous semiconductor can be easily formed on a large-area substrate by using the CVD method and does not require a crystallization step, so that an inexpensive panel can be provided. At this time, if a conductive layer is formed by a droplet discharge method typified by an ink jet method, a cheaper panel can be provided.
Note that the position where the connection film 407 is provided is not limited to the above structure, and for example, as illustrated in FIG. At this time, the connection film 407 and the element group 410 are connected via the connection wiring 24 and the source / drain wiring 18. Note that this embodiment can be freely combined with the above embodiment mode and other embodiments.

Mobile devices such as television devices (TVs, television receivers), digital cameras, digital video cameras, mobile phone devices (mobile phones), PDAs, and the like as electronic devices using display devices having pixel regions including light-emitting elements Examples thereof include a terminal, a portable game machine, a monitor, a computer, an audio playback device such as a car audio, and an image playback device equipped with a recording medium such as a home game machine. A specific example will be described with reference to FIG.

A portable information terminal using the display device of the present invention illustrated in FIG. 8A includes a main body 9201, a display portion 9202, and the like, and can display a high-definition image according to the present invention. A digital video camera using the display device of the present invention illustrated in FIG. 8B includes display portions 9701 and 9702 and the like, and can display a high-definition image according to the present invention. A portable terminal using the display device of the present invention illustrated in FIG. 8C includes a main body 9101, a display portion 9102, and the like, and can display a high-definition image according to the present invention. A portable television device using the display device of the present invention illustrated in FIG. 8D includes a main body 9301, a display portion 9302, and the like, and can display a high-definition image according to the present invention. A portable computer using the display device of the present invention illustrated in FIG. 8E includes a main body 9401, a display portion 9402, and the like, and can display a high-definition image according to the present invention. A television set using the display device of the present invention illustrated in FIG. 8F includes a main body 9501, a display portion 9502, and the like, and can display a high-definition image according to the present invention. In addition, the influence of stray light can be suppressed by the arrangement of the light shielding film, and a reduction in size, weight, and thickness can be realized. Note that this embodiment can be freely combined with the above embodiment mode and other embodiments.

The display device of the present invention can be used as an ID card capable of transmitting and receiving data without contact by mounting a functional circuit such as a memory or a processing circuit or an antenna coil. An example of the configuration of such an ID card will be described with reference to the drawings.

  FIG. 9A shows one mode of an ID card incorporating a display device according to the present invention. The ID card shown in FIG. 9A is a non-contact type that transmits and receives data with a reader / writer of a terminal device in a non-contact manner. Reference numeral 101 denotes a card body, and 102 corresponds to a pixel portion of a display device mounted on the card body 101.

  FIG. 9B shows a configuration of the card substrate 103 included in the card main body 101 shown in FIG. An ID chip 104 formed of a thin semiconductor film and a display device 105 according to the above embodiment or examples are attached to the card substrate 103. Both the ID chip 104 and the display device 105 are formed on a separately prepared substrate and then transferred onto the card substrate 103. As a transfer method, a thin film integrated circuit composed of a large number of TFTs is fabricated on a substrate, and then the thin film integrated circuit is peeled off from the substrate and attached to the card substrate 103 using small vacuum tweezers, or UV light irradiation. There is a method of selectively affixing to the card substrate 103 using a method. The same can be applied to the pixel portion and the driver circuit portion in the display device. A portion formed using a thin semiconductor film including the ID chip 104 and the display device 105 and transferred to the card substrate after the formation is referred to as a thin film portion 107.

  An integrated circuit 106 manufactured using TFT is mounted on the card substrate 103. A method for mounting the integrated circuit 106 is not particularly limited, and a known COG method, wire bonding method, TAB method, or the like can be used. The integrated circuit 106 is electrically connected to the thin film portion 107 via a wiring 108 formed on the card substrate 103.

  An antenna coil 109 that is electrically connected to the integrated circuit 106 is formed on the card substrate 103. Since the antenna coil 109 can transmit and receive data to and from the terminal device in a non-contact manner using electromagnetic induction, the non-contact ID card is physically worn compared to the contact type. Not easily damaged. Furthermore, the non-contact type ID card can also be used as a tag (wireless tag) for managing information without contact. A non-contact type ID card has a remarkably high amount of information that can be managed compared to a barcode that can also read information without contact. In addition, the distance from the terminal device that can read information can be made longer than when a barcode is used.

  Although FIG. 9B shows an example in which the antenna coil 109 is formed on the card substrate 103, an antenna coil that is separately manufactured may be mounted on the card substrate 103. For example, a coil formed by winding a copper wire or the like and sandwiching the copper wire between two plastic films having a thickness of about 100 μm can be used as an antenna coil. An antenna coil may be built in the thin film integrated circuit. In FIG. 9B, only one antenna coil 109 is used for one ID card, but a plurality of antenna coils 109 may be used.

  Note that FIG. 9 shows a form of an ID card equipped with the display device 105. By providing the display device 105, face photo data can be displayed on the display device, compared with the case where the printing method is used. This makes it difficult to replace face photos. In addition, information other than the face photo can be displayed, and the ID card can be enhanced.

  As the card substrate 103, a flexible plastic substrate can be used. As the plastic substrate, ARTON: JSR made of norbornene resin with a polar group can be used. Polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), poly A plastic substrate such as arylate (PAR), polybutylene terephthalate (PBT), or polyimide can be used.

  In this embodiment, the electrical connection between the ID chip and the thin film integrated circuit is not limited to the form shown in FIG. For example, the terminal of the ID chip and the terminal of the thin film integrated circuit may be directly connected with an anisotropic conductive resin or solder instead of via the wiring formed on the card substrate.

  Further, in FIG. 9, the connection between the thin film integrated circuit and the wiring formed on the card substrate may be connected by a wire bonding method, a flip chip method using a solder ball, or anisotropic conductive property. It may be directly connected with resin or solder, or may be connected using other methods.

  Next, an example of a functional configuration of the ID chip and the thin film integrated circuit in the non-contact type ID card will be described. FIG. 10 shows a block diagram of a non-contact type ID card.

  120 is an input antenna coil, and 121 is an output antenna coil. Reference numeral 122 denotes an input interface, and 123 denotes an output interface. The number of various antenna coils is not limited to the number shown in FIG. The AC power supply voltage and various signals input from the terminal device by the input antenna coil 120 are demodulated or converted to DC by the input interface 122, and then the CPU 114, ROM 115, RAM 116, EEPROM 117 via the bus 128. , And supplied to various circuits such as the coprocessor 118 and the controller 119. The signals processed or generated in the various circuits are modulated by the output interface 123 and sent to the terminal device by the output antenna coil 121.

  Here, the input interface 122 is provided with a rectifier circuit 124 and a demodulation circuit 125. The AC power supply voltage input from the input antenna coil 120 is rectified in the rectifier circuit 124 and supplied to the various circuits as a DC power supply voltage. In addition, various AC signals input from the input antenna coil 120 are demodulated by the demodulation circuit 125. Then, various signals whose waveforms are shaped by being demodulated are supplied to various circuits.

  The output interface 123 is provided with a modulation circuit 126 and an amplifier 127. Various signals input to the output interface 123 from various circuits are modulated by the modulation circuit 126, amplified or buffered by the amplifier 127, and then sent from the output antenna coil 121 to the terminal device. Note that the various circuits illustrated in FIGS. 10A and 10B are merely examples, and the various circuits mounted on the ID card are not limited to the above circuits.

  In FIG. 10, the CPU 114 controls all processing of the ID card, and the ROM 115 stores various programs used in the CPU 114. The coprocessor 118 is a sub processor that assists the main CPU 114, and the RAM 116 functions as a buffer during communication with the terminal device and is also used as a work area during data processing. The EEPROM 117 stores data input as a signal at a predetermined address. Note that image data such as a face photograph is stored in the EEPROM 117 if it is stored in a rewritable state, and is stored in the ROM 115 if it is stored in a state where it cannot be rewritten. A separate memory for storing image data may be prepared.

  The controller 119 performs data processing on the signal including the image data in accordance with the specification of the display device 105 and supplies the signal to the display device 105 as a video signal. Further, the controller 119 generates an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and the like based on the power supply voltage and various signals input from the input interface 122 and supplies them to the display device 105. .

  The display device 105 includes a pixel portion 102 in which a display element is provided in each pixel, a scanning line driver circuit 112 that selects a pixel provided in the pixel portion 102, and a signal that supplies a video signal to the selected pixel. A line driving circuit 113 is provided.

  Note that FIG. 10 illustrates an example in which an antenna coil is used as an example of forming a non-contact type ID card. However, the non-contact type ID card is not limited to this, and a light emitting element, an optical sensor, or the like is used. Data transmission / reception may be performed using light.

  In FIG. 10, an input interface 122 and an output interface 123 including analog circuits such as a rectifier circuit 124, a demodulation circuit 125, and a modulation circuit 126 are formed in the integrated circuit 106. In addition, although various circuits such as the CPU 114, the ROM 115, the RAM 116, the EEPROM 117, the coprocessor 118, and the controller 119 are formed by the ID chip 104, this configuration is an example and the present invention is not limited to this configuration. For example, it may have a function such as GPS. Further, the integrated circuit 106 is formed on a silicon wafer as in the prior art, but it may be a thin film integrated circuit using TFTs as in the case of the ID chip 104.

  Although FIG. 10 shows an example in which the power supply voltage is supplied from the reader / writer of the terminal device, the present invention is not limited to this. For example, the ID card may have a configuration in which an ultra-thin battery such as a solar battery or a lithium battery is incorporated. In this embodiment, a non-contact type ID card has been described as an example. Of course, a connection terminal provided on the ID card and a reader / writer of the terminal device are electrically connected to transmit and receive data. It is possible to mount the display device according to the present invention also on the contact type ID card.

The ID card having the above configuration can be used for a driver's license, identification card, and the like.
In addition, when a facial photo is transferred to an ID card by a printing method, the facial photo can be replaced relatively easily by forgery. In the present invention, the facial photo can be easily replaced. I can't. Accordingly, forgery can be prevented to ensure security, and images other than facial photographs can be displayed, thereby realizing high added value and multi-function. Note that this embodiment can be freely combined with the above embodiment mode and other embodiments.

In this example, a display device having a structure different from that of the above embodiment is described with reference to FIG. First, the display device having the structure illustrated in FIG. 11A includes a first insulating film 12 provided over a transistor 11 provided over a substrate 10 and a pixel electrode provided over the first insulating film 12. 19, a partition layer 29 provided in contact with the pixel electrode 19, an electroluminescent layer 20 provided in contact with the pixel electrode 19 and the partition layer 29, and a counter electrode 25 provided in contact with the electroluminescent layer 20. Have.

Openings are provided in the first insulating film and the gate insulating film of the transistor, and source / drain wirings 17 and 18 are formed. Thereby, the transistor 11 and the pixel electrode 19 are connected. The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%. Further, a pixel electrode 19 is provided in contact with the source / drain wiring 18.

Here, the first insulating film is formed by stacking silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, or the like in two layers; however, the structure is not limited to this. Further, the first insulating film can be omitted.

As the partition layer 29, a light-shielding film is used here. As the light-shielding film used for the partition wall layer 29, a material obtained by adding carbon or light-shielding metal particles to an organic material such as acrylic, polyimide, or siloxane can be used. Of course, a light-transmitting barrier layer may be added above and below the barrier layer 29. As the materials used for the other components, those described in the above embodiment can be employed as appropriate. In particular, as the counter electrode 25, a dual emission type display device is formed as shown in the figure by using an aluminum thin film of 1 to 10 nm or an aluminum film containing a small amount of Li so as to transmit light from the light emitting layer. can get. Of course, by changing the material of the counter electrode 25, a bottom emission type can be obtained.

Next, the display device having the structure illustrated in FIG. 11B includes a transistor 11 provided over the substrate 10, a light-blocking insulating film 31 provided over the transistor 11, and a light-blocking insulating film 31. And the light emitting element 22 provided inside the opening.

In this configuration, an insulating film (barrier film) made of an inorganic material is omitted from the transistor 11. Of course, the barrier film may be formed. Further, openings are provided in the first insulating film and the gate insulating film of the transistor, and source / drain wirings 17 and 18 are formed. Thereby, the transistor 11 and the pixel electrode 19 are connected. The source / drain wirings 17 and 18 are preferably made of an alloy containing aluminum and carbon. Further, this alloy may contain nickel, cobalt, iron, silicon and the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%.

As the insulating film 31 having a light shielding property, a material obtained by adding carbon or light shielding metal particles to an organic material such as acrylic, polyimide, or siloxane can be used. The insulating film 31 is provided with an opening so that light can be transmitted. In the configuration shown in the drawing, the pixel electrode 19 is exposed to a portion where the gate insulating film is exposed (the gate insulating film covers the insulating film 31 having a light shielding property). It is formed so as to cover a portion that is not broken. Further, partition layers 29 and 30 are formed on the pixel electrode. In the configuration shown in the figure, the partition wall layer 29 has a light shielding property, and the partition wall layer 30 is transparent, but is not limited to this configuration. Further, the light emitting element 22 is formed by forming the electroluminescent layer 20 and the counter electrode 25 in the opening portions provided in both partition layers.

As the counter electrode 25, a dual emission type display device is obtained as shown in the figure by using an aluminum thin film of 1 to 10 nm or an aluminum film containing a small amount of Li in order to transmit light from the light emitting layer. . Of course, by changing the material of the counter electrode 25, a bottom emission type can be obtained.

11A and 11B described above does not require a light-blocking insulating film or a light-transmitting insulating film below the pixel electrode 19, thereby simplifying the process. it can. On the other hand, by using the partition layer 29 including at least a light-shielding film, the influence of blurring of the contour between pixels due to stray light can be suppressed with respect to top emission. That is, since the insulating film having a light-shielding property absorbs stray light, the contour between pixels becomes clear and a high-definition image can be displayed. In addition, the influence of stray light can be suppressed by the arrangement of the light shielding film, and a reduction in size, weight, and thickness can be realized. Note that this embodiment can be freely combined with the above embodiment mode and other embodiments.

In this embodiment, a configuration in the case where a color filter is provided in each pixel portion will be described with reference to FIG. First, FIG. 12A shows a bottom emission type display device in which R, G, and B color filters 90 to 92 are provided on a substrate 10 and are flattened with an organic resin layer 95 such as acrylic, The transistor 11, the light emitting element 22, and the like are formed. The color filters 90 to 92 can be made by a known material or a known method.

FIG. 12B shows a dual emission display device in which a transistor 11 is formed over a substrate 10 and an insulating film 31 having a light-shielding property is formed to allow light from a light emitting layer to pass therethrough. After providing the portion, color filters 93 to 95 are formed by forming a resin having red, green, and blue pigments and having translucency in the opening. The resin containing the pigment is desirably formed selectively using a droplet discharge method. Further, similarly to FIG. 12A, the counter substrate 406 is provided with R, G, and B color filters 90 to 92, and the transistor 11, the light emitting element 22, and the like are interposed through an organic resin layer 95 such as acrylic. Affixed to the formed substrate 10.

12A, a color filter is formed by forming a light-transmitting resin containing a pigment in the opening of the insulating film 31 having a light-shielding property, as in FIG. 12B. May be.

Usually, when a color filter is formed, a black matrix (a lattice-shaped or striped light-shielding film for optically separating R, G, and B pixels) is provided around the color filter. However, in the invention according to the configuration of FIGS. 12A and 12B described above, the insulating film 31 having a light shielding property is formed corresponding to the portion where the black matrix is to be provided. Therefore, according to the present invention, it is not necessary to consider the mask displacement used when the black matrix is separately formed, so that the yield is improved, and it is not necessary to add an extra process, which leads to cost reduction. Note that this embodiment can be freely combined with the above embodiment mode and other embodiments.

In this embodiment, a stacked structure of source / drain wirings 17 and 18 (including connection wiring 24. Hereinafter, referred to as “wiring” in this embodiment) and a pixel electrode 19 will be described with reference to FIG. Each drawing in FIG. 14 shows only half of the light emitting elements in the pixel region.

FIG. 14A shows a case where the wiring structure is a stacked structure of Mo600 and aluminum alloy 601 and the pixel electrode 19 is ITO602. The aluminum alloy 601 is preferably an aluminum alloy containing carbon, nickel, cobalt, iron, silicon, or the like. These contents include, for example, 0.1 to 3.0 atomic% of carbon, 0.5 to 7.0 atomic% of at least one element among nickel, cobalt, and iron, and 0.5 to 2 of silicon. It is preferable to set it to 0 atomic%. One of the characteristics of this material is that the resistance value is as low as 3.0 to 5.0 Ωcm. Here, Mo600 functions as a barrier metal.

Thus, when the aluminum-based alloy 601 contains at least one element of at least one of nickel, cobalt, and iron, the electrode potential of the ITO 602 can be brought close to the direct contact with the ITO 602. It becomes possible. Moreover, the heat resistance of the aluminum-based alloy 601 is also improved. Moreover, generation | occurrence | production of a hillock can be suppressed by making content of carbon 0.1% or more. Further, even when silicon is contained, there is an advantage that hillocks are hardly generated even when heat treatment is performed at a high temperature.

FIG. 14B shows a case where an aluminum alloy 603 is used as the wiring and ITO 602 is used as the pixel electrode 19. Here, the aluminum-based alloy 603 includes at least nickel. After the aluminum alloy 603 is formed, nickel contained in the alloy oozes out and chemically reacts with Si in the silicon semiconductor layer of the transistor 11 to form a nickel silicide 607, thereby improving the bondability. There are benefits.

FIG. 14C shows a case where an aluminum-based alloy 604 is stacked as the wiring and ITO 605 is stacked as the pixel electrode 19. In particular, it has been experimentally found that flatness is remarkably improved when a laminated structure of a combination of both is employed. For example, compared to the case of Al—Si alloy, a wiring made of titanium nitride, a structure in which ITO is laminated in order from the substrate side, or a structure in which a wiring made of Al—Si alloy, titanium nitride, and ITSO are laminated in order, the flatness Was about twice as good.

FIG. 14D shows a case where aluminum alloys 604 and 606 are used as wirings and pixel electrodes.

Since the aluminum alloy can be easily patterned by wet etching, it can be used widely regardless of wiring and pixel electrodes. However, since the aluminum alloy is excellent in reflectivity, it is necessary to form a thin film so that light can be transmitted through the wiring or the pixel electrode in the case of a bottom emission type or dual emission type display device. . Note that this embodiment can be freely combined with the above embodiment mode and other embodiments.

  In the bottom emission type, top emission type, and dual emission type display devices according to the present invention, the outline of the light emitting region corresponding to one pixel is blurred due to stray light due to the provision of the light shielding insulating film. The influence can be suppressed. That is, since the insulating film having a light-shielding property absorbs stray light, the outline of the light-emitting region corresponding to one pixel becomes clear, and a high-definition image can be displayed. Further, since the influence of stray light can be suppressed by the arrangement of the light shielding film, a reduction in size, weight, and thickness can be realized. In addition, the display device according to the present invention having such an excellent effect is a portable device such as a television device (TV, television receiver), a digital camera, a digital video camera, a mobile phone device (mobile phone), a PDA, or the like. All electronic devices such as information terminals, portable game machines, monitors, computers, sound playback devices such as car audio, image playback devices equipped with recording media such as home game machines, and ubiquitous networks such as ID cards It can be installed in tools that are indispensable for building, and I believe that its range of use and value are not small.

The figure explaining the structure of the bottom emission type display apparatus which concerns on this invention The figure explaining the structure of the dual emission type display apparatus which concerns on this invention Equivalent circuit diagram and sectional view of pixel region of display device according to the present invention The top view of the pixel area | region of the display apparatus which concerns on this invention Top view of a pixel region of a display device according to the present invention (a layout diagram of partition walls) Equivalent circuit diagram of pixel area of display device according to the present invention The top view and sectional drawing of the display apparatus which concern on this invention FIG. 11 is a diagram showing an electronic device using a display device according to the invention. The figure explaining the ID card using the display apparatus which concerns on this invention The block diagram which shows the structure of the ID card using the display apparatus which concerns on this invention The figure explaining the structure of the dual emission type display apparatus which concerns on this invention FIG. 7 illustrates a structure of a display device according to the present invention (with a color filter). 6A and 6B illustrate a structure of a display device according to the present invention (arrangement of FPCs). Schematic diagram when source / drain wiring and connection wiring have a laminated structure

Explanation of symbols

10 substrate 11 transistor 12 first insulating film 13 second insulating film 14 third insulating film 15 source / drain region 16 source / drain region 17 source / drain wiring 18 source / drain wiring 19 pixel electrode 20 electroluminescent layer 21 Counter electrode 22 Light-emitting element 27 Base insulating film 28 Gate insulating film 31 Light-shielding insulating film 310 Pixel 311 Transistor 312 Transistor 313 Light-emitting element 316 Capacitor element 317 First power source 318 Second power source 319 Pixel electrode 320 Substrate 332 Partition layer 337 Width 338 Width 340 Transistor 341 Transistor 342 Transistor 343 Power supply 400 Display area 401 Gate driver 402 Gate driver 403 Source driver 405 Substrate 406 Counter substrate 407 Connection film 408 Sealing material 410 Element group 4 2 transistor 413 light emitting element 414 capacitive element

Claims (17)

A transistor provided on a substrate;
An insulating film having a light shielding property provided on the transistor;
A light emitting element provided on the insulating film having a light shielding property,
The display device, wherein the light-shielding insulating film is provided with an opening through which light from the light-emitting element passes. A transistor provided on a substrate;
A first insulating film having a light shielding property provided on the transistor;
A second insulating film provided in contact with the first insulating film;
A light emitting element provided on the second insulating film,
The display device, wherein the first insulating film is provided with an opening through which light from the light emitting element passes. A transistor provided on a substrate;
A first insulating film provided on the transistor;
A second insulating film having a light shielding property provided on the first insulating film;
A third insulating film provided in contact with the second insulating film;
A light emitting element provided on the third insulating film,
The display device, wherein the second insulating film is provided with an opening through which light from the light emitting element passes. A transistor provided on a substrate;
An insulating film having a light shielding property provided on the transistor;
A light-emitting element including a light-transmitting pixel electrode, an electroluminescent layer, and a light-transmitting counter electrode provided over the light-shielding insulating film;
A partition layer including a light-shielding film provided in contact with at least one of the pixel electrode, the electroluminescent layer, and the counter electrode;
The display device, wherein the light-shielding insulating film is provided with an opening through which light from the light-emitting element passes. A transistor provided on a substrate;
A first insulating film having a light shielding property provided on the transistor;
A second insulating film provided in contact with the first insulating film;
A light-emitting element including a light-transmitting pixel electrode, an electroluminescent layer, and a light-transmitting counter electrode provided on the second insulating film;
A partition layer including a light-shielding film provided in contact with at least one of the pixel electrode, the electroluminescent layer, and the counter electrode;
The display device, wherein the first insulating film is provided with an opening through which light from the light emitting element passes. A transistor provided on a substrate;
A first insulating film provided on the transistor;
A second insulating film having a light shielding property provided on the first insulating film;
A third insulating film provided in contact with the second insulating film;
A light-emitting element including a light-transmitting pixel electrode, an electroluminescent layer, and a light-transmitting counter electrode provided on the third insulating film;
A partition layer including a light-shielding film provided in contact with at least one of the pixel electrode, the electroluminescent layer, and the counter electrode;
The display device, wherein the second insulating film is provided with an opening through which light from the light emitting element passes. A transistor provided on a substrate;
A first insulating film having a light shielding property provided on the transistor;
A light-emitting element including a light-transmitting pixel electrode, an electroluminescent layer, and a light-transmitting counter electrode provided on the first insulating film;
A partition layer including a light-shielding film provided in contact with at least one of the pixel electrode, the electroluminescent layer, and the counter electrode;
The first insulating film is provided with an opening that allows light from the light emitting element to pass through.
A display device, wherein a second insulating film containing a pigment and having a light-transmitting property is provided in the opening.   The display device according to claim 7, wherein the pigment exhibits red, green, or blue.   4. The display device according to claim 1, wherein the light-emitting element includes a light-transmitting pixel electrode, an electroluminescent layer, and a counter electrode.   10. The display device according to claim 4, wherein the transistor and the pixel electrode are connected by a wiring made of an alloy containing aluminum and nickel.   The display device according to claim 10, wherein the alloy includes carbon.   5. The display device according to claim 1, wherein the light-blocking insulating film contains carbon.   8. The display device according to claim 2, wherein the first light-shielding insulating film contains carbon.   The display device according to claim 3, wherein the second light-shielding insulating film contains carbon.   6. The display device according to claim 2, wherein the second insulating film contains polyimide, acrylic, or siloxane.   7. The display device according to claim 3, wherein the third insulating film includes polyimide, acrylic, or siloxane. 7. The display device according to claim 3, wherein the first insulating film is silicon nitride, silicon oxide, silicon nitride containing oxygen, or silicon oxide containing nitrogen.

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