JP2005327820A - Package for light emitting diode, light emitting device employing same and manufacturing method of the light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for a light emitting diode capable of reducing a mounting area onto a mounting substrate, and improving the take-out efficiency of light to outside while high in reliability; and to provide the manufacturing method of the light emitting device. <P>SOLUTION: The package 1 is constituted of a package body 1a and a protective member 1b. The package main body 1a is provided with a receiving recess 11 for receiving a light emitting diode chip A which is formed on one surface side of a silicon substrate 10, electrodes 15a, 15b for external connection formed on the other surface side of the substrate 10, chip connecting electrodes 13a, 13b on the inner bottom of the recess 11, and wirings 16a, 16b for connecting the chip connecting electrodes 13a, 13b to the externally connecting electrode 15a, 15b while penetrating the package body 1a. The protective member 1b is provided with transparency with respect to light irradiated from the light emitting diode chip A, and constituted of a glass substrate secured to the package body 1a so as to be air-tight in a form to close the receiving recess 11 in one surface side of the silicon substrate 10. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a light emitting diode package, a light emitting device using the same, and a method for manufacturing the light emitting device.

  Conventionally, as shown in FIG. 3, a buffer layer 42, an n-type semiconductor layer 43, a light emitting layer 44, and a p-type semiconductor layer 45 are sequentially formed on one surface (the lower surface in FIG. 3) of the sapphire substrate 41 in the thickness direction. A light-emitting diode chip A is known (see, for example, Patent Document 1 and Patent Document 2). The buffer layer 42, the n-type semiconductor layer 43, the light emitting layer 44, and the p-type semiconductor layer 45 are each formed of a gallium nitride-based compound semiconductor material (for example, GaN, InGaN, etc.).

  In the light-emitting diode chip A shown in FIG. 3, an n-electrode (pad) 48 is provided on the n-type semiconductor layer 43, and a p-electrode (pad) 47 is provided on the p-type semiconductor layer 45 via a current diffusion film 46. The current diffusion film 46 is formed of a metal material having conductivity and high reflectivity, and light emitted from the light emitting layer 44 is emitted to the outside through the sapphire substrate 41. In short, the light emitting diode chip A uses the back surface formed of the other surface (upper surface in FIG. 3) in the thickness direction of the sapphire substrate 41 as the light extraction surface.

  3 indicates the light emitted from the light emitting layer 44 to the n-type semiconductor layer 43 side and emitted to the outside through the light extraction surface of the sapphire substrate 41, and the arrow R in FIG. The light reflected by the film 46 and emitted to the outside through the light extraction surface of the sapphire substrate 41 is shown, and an arrow L in the figure is totally reflected at the interface between the sapphire substrate 41 and the buffer layer 42 and becomes the light emitting layer 44. The light is reabsorbed.

  By the way, as a light-emitting device provided with the above-mentioned light-emitting diode chip A, for example, those having the structure shown in FIG. 4 and those having the structure shown in FIG. 5 have been proposed.

  The light emitting device having the structure shown in FIG. 4 includes a light emitting diode chip A, a package (light emitting diode package) 5 containing the light emitting diode chip A, and a metal substrate 20 on which the package 5 is mounted. Here, in the package 5, a housing recess 51 for housing the light emitting diode chip A is formed on one surface in the thickness direction of the ceramic substrate 50, and the light emitting diode chip A is disposed on the inner bottom surface of the housing recess 51 via the bumps 3a and 3b. Chip connection electrodes 52a and 52b are formed so as to be electrically connected. That is, the light emitting diode chip A is flip-chip mounted on the package 5. The metal substrate 20 has an insulating layer 22 formed on one surface of the metal plate 21 and conductive patterns 23 a and 23 b formed on the insulating layer 22, and is provided between the package 5 and the insulating layer 22. The conductive layer 23a, 23b is electrically connected to the chip connection electrodes 52a, 52b via the bonding wires 57a, 57b. In the light emitting device having the structure shown in FIG. 4, a resin sealing portion (not shown) made of a sealing resin (for example, epoxy resin) in which light emitted from the light emitting diode chip A is filled in the housing recess 51. 2) to the front side (upper side in FIG. 4). The storage recess 51 is opened so that the opening area becomes smaller as it approaches the inner bottom surface.

  In the light emitting device having the structure shown in FIG. 5, the light emitting diode chip A is flip-chip mounted on the metal substrate 20, and the frame-shaped frame member 6 surrounding the light emitting diode chip A over the entire circumference is bonded with an adhesive. It is fixed to the metal substrate 20 via the layer 66. Here, the light emitting diode chip A is electrically connected to the conductive patterns 23a and 23b of the metal substrate 20 via the bumps 3a and 3b. In the light emitting device having the structure shown in FIG. 5, a resin sealing portion (not shown) made of a sealing resin (for example, an epoxy resin) filled with light emitted from the light emitting diode chip A inside the frame member 6. 2) to the front side (upper side in FIG. 5). Here, the frame member 6 is opened so that the opening area becomes smaller as it approaches the metal substrate 20, and a reflective film 64 made of a metal material is formed on the inner peripheral surface. Therefore, in the light emitting device having the structure shown in FIG. 5, the light emitted from the light emitting diode chip A to the side can be reflected by the reflection film 64 and extracted to the front side.

  In addition to the function of protecting the light-emitting diode chip from the outside, the conventional light-emitting diode package has an electrical connection function with an external electric circuit and a mounting function with respect to a mounting board. By controlling the current and voltage supplied to the light emitting diode chip by a separately provided control circuit, the light emitting diode chip can be made to emit light with a desired light amount. The above-mentioned Patent Document 2 has a configuration in which a light emitting diode chip is mounted on a chip in which a protection circuit composed of a plurality of Zener diodes is formed in order to prevent the light emitting diode chip from being destroyed by electrostatic discharge (ESD). Proposed.

Conventionally, a light-emitting device in which phosphor particles are dispersed in a sealing resin used for the above-described resin sealing portion and coated so as to cover a light-emitting diode chip has been proposed. The resin part is excited by a part of the light emitted from the light emitting diode chip and has a wavelength conversion function to emit light having a wavelength different from that of the light emitting diode chip. It is possible to obtain light (combined light) of different colors (for example, white).
JP-A-11-220170 JP 2001-237458 A

  By the way, in the light emitting device having the structure shown in FIG. 4, since it is necessary to bond one end portions of the bonding wires 57a and 57b to the chip connection electrodes 52a and 52b, the area of the inner bottom surface of the housing recess 51 is relatively large. In addition, since it is necessary to secure a space for bonding the other ends of the bonding wires 57a and 57b in the metal substrate 20 as a mounting substrate on which the package 5 is mounted, the package 5 is mounted on the metal substrate 20. There was a problem that the area was relatively large.

  On the other hand, in the light emitting device having the structure shown in FIG. 5, it is necessary to fix the frame member 6 to the metal substrate 20 as the mounting substrate through the adhesive layer 66 made of an adhesive, and the adhesive may protrude. Considering this, there was a problem that the mounting area was relatively large. Note that a light emitting device having a control circuit as described above externally attached is expensive and low cost is desired.

  In the light emitting device having the structure shown in FIG. 4, part of the light emitted from the light emitting diode chip A to the side is absorbed by the package 5 made of the ceramic substrate, and the light emitting device having the structure shown in FIG. Then, since a part of the light emitted from the light emitting diode chip A to the side is absorbed by the adhesive layer 66, further improvement of the light extraction efficiency to the outside is desired in any light emitting device. Further, in the light emitting device having the configuration shown in FIGS. 4 and 5, the sealing resin portion causes the light emitting diode chip A to be mechanically damaged from the outside (mechanical stress, vibration, impact, etc.) or environmentally damaged. Although it can be protected from factors (contaminants, etc.), the sealing resin may be deteriorated by light, heat from the light-emitting diode chip A, moisture from the atmosphere, etc., and reliability is further improved. Is desired. In the light emitting device in which the phosphor particles are dispersed in the sealing resin and directly applied to the light emitting diode chip A, the in-plane variation in luminance is increased due to the in-plane variation in the thickness of the resin sealing portion. End up.

  The present invention has been made in view of the above reasons, and the object of the invention of claims 1 to 6 is that the mounting area on the mounting substrate can be reduced and the light extraction efficiency to the outside can be improved. The object of the invention of claim 7 is to provide a light emitting device that can reduce the mounting area of the mounting substrate and improve the light extraction efficiency and reliability to the outside. In particular, it is an object of the present invention to provide a method of manufacturing a light emitting device that can reduce the mounting area of the mounting substrate and improve the light extraction efficiency and reliability to the outside.

  According to the first aspect of the present invention, the closer to one surface of the semiconductor substrate in the thickness direction the closer to the other surface, the smaller the opening area is, and a housing recess for housing the light emitting diode chip is formed. A chip connection electrode is formed on the inner bottom surface of the housing recess to connect a light-emitting diode chip disposed face-down to face, and electrically connects the chip connection electrode and the external connection electrode. The wiring is provided in the thickness direction of the mounting portion formed between the inner bottom surface of the housing recess and the other surface of the semiconductor substrate, and a reflective film made of a metal material is formed on the inner peripheral surface of the housing recess. A flat plate shape that is translucent to the light emitted from the light emitting diode chip and the package main body and is hermetically fixed to the package main body so as to close the housing recess on the one surface side of the semiconductor substrate. Characterized in that it comprises a protective member.

  According to the present invention, since the external connection electrode is formed on the other surface side of the semiconductor substrate in which the housing recess for housing the light emitting diode chip is formed on one surface side in the thickness direction, the mounting area on the mounting substrate is reduced. In addition, since a reflection film that reflects light from the light emitting diode chip is formed on the inner peripheral surface of the housing recess, the light emitted from the light emitting diode chip to the side is reflected by the reflection film. Thus, the light can be taken out of the storage recess, and the light extraction efficiency to the outside can be improved. Also, a flat protective member that is light-transmitting to the light emitted from the light-emitting diode chip and is hermetically fixed to the package body so as to close the housing recess on the one surface side of the semiconductor substrate. Therefore, it is possible to protect the light-emitting diode chip housed inside without using sealing resin as in the past, from external mechanical destruction factors and environmental destruction factors, and to improve reliability Can do. Further, since the package body is formed using a semiconductor substrate, a control circuit for controlling light emission of the light emitting diode chip can be formed on the package body.

  According to a second aspect of the present invention, in the first aspect of the invention, the protective member is a phosphor that emits visible light when excited by light from the light emitting diode chip on one of the two surfaces intersecting the thickness direction. A wavelength conversion layer having particles is formed.

  According to this invention, the light emission color of the entire light emitting device is determined by the light emission color of the light emitting diode chip and the light emission color of the phosphor particles, and light of a color different from the light emitted from the light emitting diode chip can be obtained. In addition, since the wavelength conversion layer is formed on the surface of the flat protective member, it is possible to form a wavelength conversion layer with a uniform thickness and to reduce in-plane variation in luminance (uniformity). Light can be obtained).

  According to a third aspect of the present invention, in the first or second aspect of the present invention, the protective member contains phosphor particles that are excited by light from the light emitting diode chip to emit visible light. And

  According to this invention, the light emission color of the entire light emitting device is determined by the light emission color of the light emitting diode chip and the light emission color of the phosphor particles, and light of a color different from the light emitted from the light emitting diode chip can be obtained. In addition, since the protective member constitutes a wavelength conversion layer and a wavelength conversion layer having a uniform thickness can be obtained, in-plane variation in luminance can be reduced (uniform light can be obtained). ).

  The invention of claim 4 is the invention of claim 2 or claim 3, wherein the semiconductor substrate is made of a silicon substrate and the protective member is made of a glass substrate, and the protective member is formed by anodic bonding with the package body. It is characterized by being fixed.

  According to the present invention, the protective member and the package body can be hermetically bonded without using an adhesive, and the airtightness of the light emitting diode package can be improved, thereby further improving the reliability. Can be made.

  The invention of claim 5 is the invention of claim 2 or claim 3, wherein the semiconductor substrate is made of a silicon substrate and the protective member is made of a glass substrate, and the protective member is surface activated with the package body. It is fixed by joining.

  According to the present invention, the protective member and the package body can be bonded at room temperature, and the light emitting diode chip is prevented from being thermally damaged in the bonding process of the protective member and the package body. be able to. In addition, it is possible to prevent a decrease in airtightness due to a difference in thermal expansion coefficient between the protective member and the package body.

  According to a sixth aspect of the present invention, in the first to fifth aspects of the invention, the light emitting diode chip is controlled to at least one of the inner bottom surface of the housing recess and the other surface of the semiconductor substrate in the semiconductor substrate. A control circuit is formed.

  According to the present invention, the function of the light emitting device can be improved, and the cost can be reduced as compared with the case where a control circuit is externally attached.

  According to a seventh aspect of the present invention, the light emitting diode package according to any one of the first to sixth aspects is flip-chip mounted on the mounting portion in the housing recess of the light emitting diode package with the back surface as the light extraction surface. And a light emitting diode chip.

  According to this invention, since the external connection electrode of the light emitting diode package is formed on the other surface side in the thickness direction of the semiconductor substrate, the mounting area of the light emitting diode package on the mounting substrate can be reduced. In addition, the light emitted from the light emitting diode chip to the side is reflected by the reflective film formed on the inner peripheral surface of the housing recess and taken out to the outside. The efficiency of taking out to the outside can be improved. In addition, a flat protective member that is transparent to light emitted from the light emitting diode chip and is hermetically fixed to the package body so as to close the housing recess on the one surface side of the semiconductor substrate. Therefore, the light emitting diode chip can be protected from external mechanical destruction factors and environmental destruction factors without using a conventional sealing resin, and the reliability can be improved.

  The invention of claim 8 is the method of manufacturing a light emitting device according to claim 7, wherein a light emitting diode chip is mounted on each package body in a semiconductor wafer on which a large number of package bodies are formed, and finally a plurality of light emitting devices are manufactured. It is characterized by being separated into individual pieces.

  According to the present invention, the mounting area on the mounting substrate can be reduced, and the light extraction efficiency to the outside that can improve the light extraction efficiency to the outside can be increased.

  According to the first aspect of the present invention, the mounting area on the mounting substrate can be reduced, the light extraction efficiency to the outside can be improved, and the light-emitting diode chip housed inside can be protected by the protective member, and the reliability is improved. There is an effect that can be increased.

  The invention of claim 7 can reduce the mounting area on the mounting substrate, improve the light extraction efficiency of the light emitted from the light emitting diode chip to the outside, and reliably protect the light emitting diode chip. It is possible to increase the reliability.

  The invention according to claim 8 has an effect that the mounting area on the mounting substrate can be reduced, the light extraction efficiency to the outside can be improved, and the productivity of the light emitting device with high reliability can be increased.

  As shown in FIG. 1, the light-emitting device of this embodiment includes a light-emitting diode chip A and a package (light-emitting diode package) 1 that houses the light-emitting diode chip A. See FIG. 4 and FIG. It can be mounted on a mounting substrate such as the metal substrate 2 described above or a lead frame.

  The light-emitting diode chip A is a blue light-emitting diode chip having the configuration shown in FIG. 3 described above. The buffer layer 42 and the n-type semiconductor layer 43 are disposed on one surface (the lower surface in FIG. 3) in the thickness direction of the sapphire substrate 41. The light emitting layer 44 and the p-type semiconductor layer 45 are sequentially formed. The light-emitting diode chip A includes an n-electrode (pad) 48 provided on the n-type semiconductor layer 43 and a p-electrode (pad) 47 provided on the p-type semiconductor layer 45 via a current diffusion film 46. The current diffusion film 46 is made of a metal material having conductivity and high reflectivity, and light emitted from the light emitting layer 44 is emitted to the outside through the sapphire substrate 41. In short, the light emitting diode chip A has a back surface made of the other surface (upper surface in FIG. 3) in the thickness direction of the sapphire substrate 41 as a light extraction surface, and is flip-chip mounted on the package body 1a of the package 1. . The buffer layer 42, the n-type semiconductor layer 43, the light emitting layer 44, and the p-type semiconductor layer 45 are each formed of a gallium nitride-based compound semiconductor material (for example, GaN, InGaN, etc.). Further, although the light-emitting diode chip A in the present embodiment has a double hetero structure, the structure of the light-emitting diode chip A is not particularly limited, and the above-described current diffusion film 46 is not necessarily provided.

  The package body 1a of the package 1 is formed by processing a silicon substrate 10 as a semiconductor substrate, and a storage recess 11 for storing the light-emitting diode chip A is formed on one surface side in the thickness direction. External connection electrodes 15a and 15b made of a metal material (for example, Al, Ag, Rh, etc.) are formed on the surface side.

  Here, in the package 1, the inner bottom surface of the storage recess 11 is formed in a flat shape, and the pads 47 and 48 of the light emitting diode chip A are formed on the inner bottom surface of the storage recess 11 with a metal material (for example, Au, Cu). , Sn, In, or a gold alloy containing them), and chip connection electrodes 13a and 13b made of a metal material (for example, Al, Ag, Rh, etc.) electrically connected via bumps 3a and 3b made of them are formed. The wiring recesses 16a and 16b made of metal materials (for example, W, Cu, Ni, etc.) that electrically connect the chip connection electrodes 13a and 13b and the external connection electrodes 15a and 15b 11 is formed through the mounting portion 12 formed of a thin portion between the inner bottom surface and the other surface.

  The storage recess 11 in the package body 1a has a smaller opening area as it approaches the inner bottom surface from the one surface in the thickness direction of the silicon substrate 10 (in other words, the storage recess 11 in the package body 1a As the distance from the portion 12 increases, the opening area increases, and a reflective film 18 made of a highly reflective metal material (eg, Al, Ag, Rh, etc.) is formed on the inner peripheral surface of the storage recess 11 over substantially the entire surface. Has been.

  By the way, the package 1 in the present embodiment is transparent to the light emitted from the package body 1a and the light-emitting diode chip A, and closes the housing recess 11 on the one surface side of the silicon substrate 10. And a protective member 1b made of a flat glass substrate that is airtightly fixed to the package body 1a. Here, the protective member 1b is fixed to the package body 1a after the light-emitting diode chip A is mounted face-down on the mounting portion 12 of the package body 1a.

  In the package 1 in the light emitting device of the present embodiment described above, the housing recess 11 for housing the light emitting diode chip A is formed on one surface of the silicon substrate 10 in the thickness direction, and the external connection electrode is formed on the other surface in the thickness direction. Since 15a and 15b are formed, the mounting area on the mounting substrate can be reduced, and the reflection film 18 is formed on the inner peripheral surface of the housing recess 11, so that the side from the light emitting diode chip A is formed. The light radiated to the side is reflected by the reflection film 18 and can be taken out of the housing recess 11, and the light radiated from the light emitting diode chip A to the side is as in the conventional example shown in FIG. The light extraction efficiency to the outside can be improved without being absorbed by the package 5 or absorbed by the adhesive layer 66 unlike the conventional example shown in FIG. Further, it is light-transmitting to the light emitted from the light-emitting diode chip A, and has a flat plate shape that is airtightly fixed to the package body 1a so as to close the housing recess 11 on the one surface side of the silicon substrate 10. Since the protective member 1b is provided, it is possible to protect the light emitting diode chip A housed therein without using a sealing resin as in the past from mechanical destruction factors and environmental destruction factors from the outside, Reliability can be improved. Further, since the package body 1a is formed using the silicon substrate 10, it is possible to form a control circuit for controlling the light emission of the light emitting diode chip on the package body 1a. For example, the housing recess 11 in the semiconductor substrate 10 can be formed. If a control circuit for controlling the light-emitting diode chip A is formed on at least one of the inner bottom surface of the silicon substrate 10 and the other surface of the silicon substrate 10, the function of the light-emitting device can be improved and the control circuit can be externally attached. Compared to cost reduction. If the reflective film 18 is formed of the same metal material as the chip connecting electrodes 13a and 13b, the reflective film 18 can be formed simultaneously with the chip connecting electrodes 13a and 13b. 13b is formed of a metal material having the same reflectivity as that of the reflective film 18, and the light emitted from the light emitting diode chip A toward the inner bottom surface of the housing recess 11 is reflected by the chip connection electrodes 13a and 13b and stored. It can be taken out of the recess 11.

  Here, one of the two surfaces (both surfaces in the thickness direction) intersecting the thickness direction of the protection member 1b (for example, the surface facing the inner bottom surface of the storage recess 11 in the protection member 1b) is formed from the light emitting diode chip A. If a wavelength conversion layer having phosphor particles that are excited by light and emit visible light is formed, the emission color of the entire light-emitting device is determined by the emission color of the light-emitting diode chip A and the emission color of the phosphor particles. Thus, light of a color different from the light emitted from the light-emitting diode chip A can be obtained, and the wavelength conversion layer is formed on the surface of the flat protective member 1b, so that the wavelength conversion with a uniform thickness is achieved. A layer can be formed, and in-plane variation in luminance can be reduced (uniform light can be obtained). Further, if phosphor particles that are excited by light emission of the light-emitting diode chip A and emit visible light having a desired wavelength are included in the protective member 1b, the light emitted from the light-emitting diode chip A and the phosphor particles are used. Synthetic light with emitted light can be obtained, for example, white light can be obtained, and the protective member 1b constitutes the wavelength conversion layer, so that a wavelength conversion layer having a uniform thickness can be obtained. Therefore, in-plane variation in luminance can be reduced (uniform light can be obtained).

  Hereinafter, a method for manufacturing the light emitting device of this embodiment will be described with reference to FIG.

  First, the storage recess 11 is formed on the one surface of the single crystal silicon substrate 10 in the thickness direction, so that the silicon substrate 10 has an inner bottom surface of the storage recess 11 and the other surface as compared with other portions. After forming the thin mounting portion 12, through holes (through holes) penetrating in the thickness direction are formed in the portions where the wirings 16 a and 16 b are to be formed in the mounting portion 12 by using lithography technology and etching technology, After forming the control circuit as necessary, the wirings 16a and 16b, the external connection electrodes 15a and 15b, the chip connection electrodes 13a and 13b, and the reflection film 18 are formed, whereby the structure shown in FIG. Get. In forming the storage recess 11, for example, a silicon oxide film is formed on both sides in the thickness direction of the silicon substrate 10, and then the silicon oxide film on the one surface side is patterned, and the patterned silicon oxide is formed. The storage recess 11 may be formed by performing anisotropic etching using an alkaline solution (for example, KOH, TMAH, etc.) using the film as a mask, and then the silicon oxide films on both sides in the thickness direction may be removed. .

  Thereafter, bumps 3a and 3b are formed in the portions corresponding to the electrodes 47 and 48 of the light-emitting diode chip A in the chip connection electrodes 13a and 13b, and then light is emitted to the bumps 3a and 3b formed in the package body 1a. After aligning the light emitting diode chip A with the package body 1a so that the electrodes 47 and 78 of the diode chip A are aligned, the bumps 3a and 3b and the electrodes 47 and 48 are pressed by heating. (That is, the light emitting diode chip A is flip-chip mounted on the mounting portion 12 of the package body 1a) to obtain the structure shown in FIG. In forming the bumps 3a and 3b, for example, the tip of a thin metal wire having a wire diameter of 5 μm to 50 μm is melted to form a ball, and the ball is to be formed (here, each chip in the package body 1a). A so-called stud bump method may be employed in which the electrodes are bonded to the bonding electrodes 13a and 13b), or a portion other than the formation site of the bumps 3a and 3b is covered with a resist layer, and then a metal is deposited by a plating method. Then, a method of forming bumps 3a and 3b having a desired shape and removing the resist layer may be employed. Further, in the bonding step of bonding the electrodes 47 and 48 of the light-emitting diode chip A and the bumps 3a and 3b, for example, the heating temperature of the package body 1a and the light-emitting diode chip A is set to 350 ° C. or more, and the bumps 3a and 3b respectively. However, it is possible to reduce the heating temperature to around 100 ° C. by applying ultrasonic waves (for example, ultrasonic waves having a frequency of about 20 kHz to 200 kHz) at the time of bonding. is there.

  Next, a structure shown in FIG. 2C is obtained by performing a bonding step for hermetically fixing the protective member 1b made of a glass substrate and the package body 1a. In the bonding step of fixing the protective member 1b and the package main body 1a, for example, the peripheral portion of the protective member 1b and the peripheral portion of the package main body 1a may be fixed using an adhesive, or by anodic bonding. It may be fixed or may be fixed by surface activated bonding. Here, when the protective member 1b and the package main body 1a are fixed by anodic bonding, for example, the peripheral portion of the protective member 1b made of a glass substrate and the peripheral portion of the package main body 1a formed using a silicon substrate are used. A negative voltage (for example, such that the protective member 1b is at a low potential side with respect to the package body 1a in a state where the joint is pressurized (for example, about several hundred grams) and heated (for example, 300 ° C. to 400 ° C.). 200-400V), and when the protective member 1b and the package main body 1a are fixed by surface activation bonding, the opposing surfaces of the peripheral portion of the protective member 1b and the peripheral portion of the package main body 1a A metal film made of a metal material (eg, gold, copper, etc.) is formed on the surface, and the surface of each metal film is activated by irradiating the surface of each metal film with a plasma such as argon. By pressurizing overlapping the protective member 1b and the package body 1a, it is possible to bond the protective member 1b and the package body 1a at ambient temperature. In addition, when the above-described wavelength conversion layer is added to the protective member 1b, the wavelength conversion layer made of a phosphor layer is formed on the surface of the glass substrate by, for example, a printing method before joining the protective member 1b and the package body 1a. In the case of adopting the structure in which the protective member 1b contains the above-described phosphor particles, a glass substrate containing phosphor particles that can obtain a desired emission color is prepared in advance. Just keep it.

  By the way, in the manufacturing method of the light emitting device of the present embodiment, the steps described above are performed in a wafer state, and the package body 1a shown on the left side of FIG. 2A is shown on the right side of FIG. A large number of light emitting diode chips A in the package body 1a shown on the left side of FIG. 2B are formed on the semiconductor wafer 100 made of a silicon wafer, and each package body in the semiconductor wafer 100 shown on the right side of FIG. A large number of package bodies 1a are mounted on the semiconductor wafer 100 shown on the right side of FIG. 2 (c) and mounted on the left side of FIG. 2 (c). A large number of protective members 1b in the light emitting device are formed on the glass wafer 200 shown on the right side of FIG. That is, in the method for manufacturing the light emitting device according to the present embodiment, the components other than the light emitting diode chip A are handled in a wafer state until the joining step for joining the package body 1a and the protection member 1b is completed.

  And in the manufacturing method of the light-emitting device of this embodiment, after the above-mentioned joining process is completed, the wafer which finally consists of a laminate of the semiconductor wafer 100 and the glass wafer 200 is diced as shown in FIG. A separation process for separating the individual light emitting devices into individual pieces B using a saw 4 or the like is performed.

  According to the manufacturing method of the light emitting device described above, the light emitting diode chip A is mounted on each package body 1a in the semiconductor wafer 100 on which a large number of package bodies 1a are formed, and finally separated into individual pieces B of a plurality of light emitting devices. Therefore, the productivity of the light emitting device can be increased. Here, as described above, if the semiconductor substrate is constituted by the silicon substrate 10 and the protective member 1b is constituted by the glass substrate, and the protective member 1b and the package body 1a are fixed by anodic bonding, the adhesive material can be obtained. Without being used, the protective member 1b and the package body 1a can be hermetically bonded, the airtightness of the light emitting diode package 1 can be improved, and the reliability can be further improved. Further, if the protective member 1b and the package main body 1a are fixed to each other by surface activation bonding, the protective member 1b and the package main body 1a can be bonded at room temperature, and the protective member 1b and the package main body 1a are bonded. In the process, it is possible to prevent the light-emitting diode chip A from being damaged by heat, and to prevent a decrease in airtightness and a decrease in bonding strength due to a difference in thermal expansion coefficient between the protective member 1b and the package body 1a. be able to.

The light-emitting device in embodiment is shown, (a) is a schematic plan view, (b) is a schematic sectional drawing. It is explanatory drawing of the manufacturing method of the light-emitting device same as the above. It is a schematic sectional drawing which shows an example of the conventional light emitting diode chip | tip. It is a schematic sectional drawing of the light-emitting device which shows a prior art example. It is a schematic sectional drawing of the light-emitting device which shows another prior art example.

Explanation of symbols

A Light emitting diode chip 1 Package 1a Package body 1b Protective member 3a, 3b Bump 10 Silicon substrate 11 Storage recess 12 Mounting part 13a, 13b Chip connection electrode 15a, 15b External connection electrode 16a, 16b Wiring 18 Reflective film

Claims (8)

  The closer to one surface in the thickness direction of the semiconductor substrate the closer to the other surface, the smaller the opening area becomes, forming a housing recess for housing the light emitting diode chip, and forming and housing an external connection electrode on the other surface side of the semiconductor substrate. A chip connection electrode is formed on the inner bottom surface of the recess to connect a light-emitting diode chip that is opposed to face-down, and a wiring that electrically connects the chip connection electrode and the external connection electrode is provided in the storage recess in the semiconductor substrate. A light emitting diode chip, and a package body that is provided in a thickness direction of a mounting portion that is a portion between the inner bottom surface of the location and the other surface, and a reflective film made of a metal material is formed on the inner peripheral surface of the housing recess A flat protective member that is transparent to light emitted from the semiconductor substrate and is hermetically fixed to the package body so as to close the housing recess on the one surface side of the semiconductor substrate. A light emitting diode package, characterized in that.   The protective member is formed by forming a wavelength conversion layer having phosphor particles that are excited by light from the light emitting diode chip and emit visible light on one of two surfaces intersecting the thickness direction. The light emitting diode package according to claim 1.   3. The light emitting diode package according to claim 1, wherein the protective member contains phosphor particles that are excited by light from the light emitting diode chip to emit visible light.   The said semiconductor substrate is comprised with a silicon substrate, and the said protection member is comprised with a glass substrate, The said protection member adheres to the said package main body by anodic bonding, The Claim 2 or Claim 3 characterized by the above-mentioned. Light emitting diode package.   4. The semiconductor substrate is made of a silicon substrate and the protective member is made of a glass substrate, and the protective member is fixed to the package body by surface activation bonding. The package for light emitting diodes as described.   The control circuit for controlling the light emitting diode chip is formed on at least one of the inner bottom surface of the housing recess and the other surface of the semiconductor substrate in the semiconductor substrate. Item 6. The light emitting diode package according to any one of Items 5 to 6.   A light emitting diode package according to any one of claims 1 to 6, and a light emitting diode chip flip-chip mounted on a mounting portion in a housing recess of the light emitting diode package with a back surface as a light extraction surface. A light emitting device characterized by that.   8. The method of manufacturing a light emitting device according to claim 7, wherein a light emitting diode chip is mounted on each package body in a semiconductor wafer on which a large number of package bodies are formed, and finally separated into a plurality of light emitting device pieces. A method for manufacturing a light emitting device.

Images