JP2005353971A - Structure of projection optical system photosensitive substrate surface position detection mechanism and scanning exposure device using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure device which constitutes a surface position detection system which reduces measurement error caused by fluctuation of atmosphere in the optical path of a surface position detection mechanism, by matching an optical path of the surface position detection system with a region for purging a projection optical system effectively. <P>SOLUTION: The device has an encircling member which almost encloses an optical path space between a projection optical system and a photosensitive substrate. In the encircling member, a holder holding an optical element, a gas supply port which blows inert gas opposite into the enclosing member in a scanning direction, the photosensitive substrate side edge face of the encircling member, and the photosensitive substrate, are disposed with a clearance. The exposure device discharges the inert gas from the clearance. The optical path of the surface position detection mechanism is disposed in a longitudinal direction of the encircling member parallel to the longitudinal direction of the purge region. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a structure of a substrate surface position detection mechanism in a scanning exposure apparatus.

  The semiconductor exposure apparatus is an apparatus for manufacturing a semiconductor integrated circuit by transferring an original (reticle) having a circuit pattern onto a photosensitive substrate (silicon wafer). This semiconductor exposure apparatus uses an illumination optical system that irradiates a predetermined amount of exposure light from a light source to an arbitrary location, and uses the exposure light from the illumination optical system to form an original pattern on a substrate at a predetermined magnification. For example, a projection optical system that performs exposure and transfer is used. In recent years, in order to further increase the degree of circuit integration, further miniaturization of circuit patterns is required, and the required accuracy for a semiconductor exposure apparatus cannot be handled with the conventional structure.

  As means for improving the resolving power of the semiconductor exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system.

  With regard to the exposure wavelength, development of an KrF excimer laser having an oscillation wavelength around 248 nm from an i-line at 365 nm and an ArF excimer laser having an oscillation wavelength around 193 nm has been carried out recently. Furthermore, an F2 excimer laser having an oscillation wavelength near 157 nm has been developed.

  In exposure light such as this ArF excimer laser and F2 excimer laser, the emission spectrum overlaps with the absorption band of oxygen, so that the transmittance of the exposure light decreases due to the absorption of oxygen. In addition, oxygen absorbs exposure light to generate ozone. This ozone further increases the absorption of light and significantly decreases the transmittance, and various products resulting from ozone are formed on the optical element surface. It adheres and causes the efficiency of the optical system to decrease.

  Further, the exposure light of the F2 excimer laser overlaps with the moisture absorption band, and moisture absorbs the exposure light in the same manner as oxygen, leading to a decrease in transmittance, a decrease in optical system efficiency, and a decrease in performance of the semiconductor exposure apparatus.

  In a semiconductor exposure apparatus using exposure light such as ArF excimer laser and F2 excimer laser that absorbs oxygen as described above, photochemical reaction occurs in the optical path atmosphere of exposure light including illumination optical system and projection optical system. On the other hand, a technique for supplying an inert gas (nitrogen gas, helium gas, argon gas, etc.) and purging oxygen, moisture, etc. is required.

  According to Japanese Patent Application Laid-Open No. 8-279458, in a semiconductor exposure apparatus, a gas supply system that supplies an inert gas into the optical path of an illumination optical system and a projection optical system, and a photosensitive substrate side end of the projection optical system to the vicinity of the photosensitive substrate. In this space, a sealing member for replacing the air present in the optical path of the exposure light in the space with an inert gas is disposed. In addition, an inert gas from the gas supply system is supplied to the illumination optical system, the projection optical system, and the sealed space through independent lines and purged.

  Further, as disclosed in Japanese Patent Application Laid-Open No. 2001-118783, a cover-like space shielding object is disposed in a space from the projection optical system photosensitive substrate side end to the vicinity of the photosensitive substrate, and an inert gas is placed inside the cover. A configuration in which the exposure area is purged by flowing is also disclosed.

  Furthermore, recently, in a scanning exposure apparatus that uses exposure light that has the most efficient absorption characteristics for oxygen, moisture, etc., in particular, oxygen, moisture, etc. in the optical path of exposure light between the projection optical system and the photosensitive substrate are efficiently removed. Purging means for purging and optical path space between the projection optical system and the photosensitive substrate as a contamination countermeasure against the contamination of the optical element closest to the photosensitive substrate of the projection optical system by gas generated from the resist. The surrounding member includes an enclosing member, and the enclosing member includes a holding unit that holds the optical element, a gas supply port that sprays an inert gas in the enclosing member in the scanning direction, and a photosensitive substrate side end surface of the enclosing member. There has been proposed an exposure apparatus that is arranged with a gap between the substrate and exhausts inert gas from the gap.

  On the other hand, with these exposure systems, as the resolution improves, the allowable depth (focus depth) of the projection optical system decreases, and strict accuracy is required for the accuracy when setting the wafer surface to the in-focus position of the projection optical system. Has been.

  2. Description of the Related Art Conventionally, in a reduction projection type exposure apparatus for manufacturing semiconductor elements, a surface position detection device (prior to projection exposure of a reticle circuit pattern as a first object onto a wafer as a second object by a projection lens system ( The position of the wafer surface in the optical axis direction is detected using an autofocus device or an AF device, and the wafer surface is positioned on the best image plane of the projection lens.

  As one of the surface position detection mechanisms for the wafer surface used in the projection exposure apparatus, there is a detection mechanism configured by causing a light beam to be incident obliquely on the wafer surface.

  In this detection mechanism, a plurality of light beams are irradiated onto the wafer surface, which is the surface to be inspected, and the plurality of light beams reflected from the wafer surface are received by the photoelectric conversion elements, respectively, and the incident position information of the light beams on the photoelectric conversion elements To detect the wafer surface position information (focus) in the Z direction, and further detect the wafer surface tilt information (tilt) from the focus information of multiple measurement points. Measuring.

  Here, the surface position detection mechanism for detecting the surface position information of the wafer is used for detecting the surface position of the wafer surface due to the spatial disturbance of the refractive index of air caused by a subtle temperature difference due to the air conditioning mechanism in the exposure apparatus. The light flux varies in the optical path due to layers or lumps having different refractive indexes, and a phenomenon occurs in which the incident position of the light flux on the detector is different. Therefore, there is a problem that the detection accuracy of the wafer surface position is deteriorated.

  For this reason, as disclosed in Japanese Patent Application Laid-Open No. 2000-082654, a reference measurement unit that measures an external factor in the vicinity of the object plane is arranged in the plane position detection unit, and the external measurement factor for the plane measurement value of the plane position detection unit is The measurement condition of the reference measurement unit can be changed according to the rate of change, and the surface position information of the object surface is obtained using the surface measurement value and the reference measurement value.

  Japanese Patent Application Laid-Open No. 8-279458 discloses a method of reducing air fluctuation in the optical path of the surface position detection system by covering the entire space near the photosensitive substrate from the lower end of the projection optical system with a sealing member. .

However, a surrounding member that substantially surrounds the optical path space between the projection optical system and the photosensitive substrate is provided, and the surrounding member faces the holding portion that holds the optical element and the inert gas in the surrounding member along the scanning direction. In the exposure apparatus characterized in that the gas supply port to be sprayed, the photosensitive substrate side end surface of the surrounding member, and the photosensitive substrate are disposed with a gap, and the inert gas is exhausted from the gap, the optical path of the surface position detection system No consideration was given to the fluctuation of the atmosphere.
JP-A-8-279458 JP 2001-118783 A JP 2000-082654 A

  In the prior art disclosed in Japanese Patent Application Laid-Open No. 8-279458, since the gas between the transparent member and the photosensitive substrate is not purged with gas, the optical path of the surface position detection system enters and exits the purge area and the purge area in the exposure area. This is affected by fluctuations outside the purge region at, and causes measurement errors. Further, since the optical path passes through the transmissive glass every time the purge region is transmitted, deformation, vibration, and change in surface accuracy of the transmissive glass cause measurement errors.

  In the prior art disclosed in Japanese Patent Application Laid-Open No. 2001-118783, a blower plate that roughly separates the space between the projection optical system and the photosensitive substrate is provided, and a gas supply port and an exhaust port are provided between the projection optical system and the blower plate. Although the gas is configured to flow from a certain direction, if an exhaust port is provided in this space, the atmosphere in the purge region becomes unstable due to the oxygen and moisture contained in the surrounding atmospheric gas being easily trapped, and the atmosphere in the optical path of the surface detection system Cause fluctuations.

  Also, in recent exposure apparatuses, the reticle and wafer are projected in order to increase the numerical aperture (NA) of the projection optical system and to transfer a large area reticle pattern with high accuracy without increasing the size of the projection optical system. A step-and-scan method in which exposure is performed by synchronously scanning an optical system has become mainstream.

  The exposure area has a rectangular or arcuate slit shape having a longitudinal direction perpendicular to the scanning direction of the reticle. Therefore, in order to efficiently purge the purge region, the shape of the surrounding member is a rectangular parallelepiped shape whose longitudinal direction coincides with the longitudinal direction of the exposure region, thereby forming an effective purge region with a reduced purge gas flow rate. be able to.

  An object of the invention according to the present application is to use an exposure light having absorption characteristics for oxygen, moisture, etc., and to include an encircling member that substantially encloses an optical path space between the projection optical system and the photosensitive substrate. A rectangular parallelepiped shape in which the longitudinal direction of the region coincides with the longitudinal direction, a holding portion that holds the optical element, and a gas supply port that blows an inert gas into the enclosing member along the scanning direction; and In the exposure apparatus characterized in that the photosensitive substrate side end surface of the surrounding member and the photosensitive substrate are arranged with a gap and exhaust the inert gas from the gap, particularly in the optical path of the surface position detection system, the projection optical system is purged It is an object of the present invention to provide an exposure apparatus having a surface position detection system that efficiently reduces the measurement error caused by the fluctuation of the atmosphere in the optical path of the surface position detection mechanism.

  In order to achieve the above object, a scanning type exposure apparatus that exposes a pattern formed on a mask onto a photosensitive substrate through a projection optical system using illumination light from a light source, the projection optical system and the photosensitive substrate An encircling member that substantially encloses the optical path space between the enclosing member, the enclosing member holding the optical element, a gas supply port for spraying an inert gas oppositely into the enclosing member in the scanning direction, and the encircling member In the exposure apparatus, wherein the photosensitive substrate side end surface of the member and the photosensitive substrate are arranged with a gap, and the inert gas is exhausted from the gap, the longitudinal direction of the surrounding member and the purge The optical path of the surface position detection mechanism is arranged in parallel with the longitudinal direction of the region.

  An exposure area in a scanning type exposure apparatus that uses illumination light from a light source to expose a pattern formed on a mask onto a photosensitive substrate via a projection optical system has a rectangular shape in a longitudinal direction with respect to the scanning direction. Alternatively, it has an arcuate slit shape.

  Then, in order to minimize the influence of illuminance unevenness caused by the concentration distribution of oxygen, moisture, etc., and maintain and improve the throughput, the inert gas is sprayed in the scanning direction.

  Since the surrounding member has a rectangular parallelepiped shape in which the longitudinal direction of the surrounding member coincides with the longitudinal direction of the exposure region, the flow rate of the inert gas supplied to the purge region can be reduced. Therefore, a configuration is formed in which the longitudinal direction of the purge region and the longitudinal direction of the surrounding member coincide with the longitudinal direction of the exposure region in which the longitudinal direction is formed in a direction orthogonal to the scanning direction.

  In the above-described configuration, an encircling member that substantially encloses the optical path space between the projection optical system and the photosensitive substrate is provided. An inert gas is sprayed oppositely into the surrounding enclosure in the direction, and the inert gas is exhausted from the gap between the photosensitive substrate side end surface of the enclosure member and the photosensitive substrate, so that oxygen, moisture, etc. between the projection optical system and the photosensitive substrate are exhausted. In an exposure apparatus that discharges absorbed gas most efficiently, it is difficult to dispose the surface position detection mechanism inside the purge region because of the structure of the surrounding member.

  Accordingly, in the present invention, the light projection system emission end and the detection system incident end of the surface position detection system are made to coincide with the longitudinal direction of the azimuth member, and thus the longitudinal direction of the purge region, and the optical path of the surface position detection system is The distance through the purge area of the projection optical system is maximized, that is, the distance through the purge area is minimized. In the above configuration, the purge gas is an inert gas whose pressure, flow rate, and temperature are controlled, so that the fluctuation of the atmosphere in the optical path space in the surface position detection system is reduced in the purge area of the projection optical system compared to the outside of the purge area. Therefore, by minimizing the distance that the optical path of the surface position detection system passes outside the purge region, it is possible to minimize measurement errors caused by atmospheric fluctuations in the optical path of the surface position detection mechanism. .

  The surrounding member of the projection optical system photosensitive substrate side end structure in the scanning exposure apparatus of the present invention is an exposure apparatus that efficiently purges oxygen, moisture, etc. between the projection optical system and the photosensitive substrate. By minimizing the distance that passes outside the purge region, it is possible to minimize the measurement error that the surface position detection mechanism receives from fluctuations in the atmosphere outside the purge region. Thereby, the erroneous measurement component of the surface position detection mechanism can be reduced, and a highly reliable scanning exposure apparatus can be provided.

  The exposure apparatus of the present invention is not limited, and any exposure apparatus that uses ultraviolet light as exposure light and irradiates a photosensitive substrate with a mask pattern via a projection optical system can be used.

  Although ultraviolet light as exposure light used in the exposure apparatus of the present invention is not limited, as described in the prior art, far-infrared, especially ArF excimer laser having a wavelength near 193 nm and fluorine (F2) excimer laser having a wavelength near 157 nm It is effective against light.

(First embodiment)
FIG. 1 is a schematic diagram according to a first embodiment of the present invention. In FIG. 1, the gravity direction is the -Z direction, and the scanning direction is the ± Y direction. 1 is a projection optical system, 2 is a photosensitive substrate, 3 is a surrounding member that substantially surrounds the optical path space between the projection optical system 1 and the photosensitive substrate 2, and a rectangular parallelepiped shape in which the longitudinal direction of the surrounding member coincides with the longitudinal direction of the exposure region I am doing. Reference numeral 4 denotes a blowout port for supplying an inert gas to the space S1, and 5 is a photosensitive substrate stage that supports the photosensitive substrate 2, 6 is an illumination optical system, 7 is a reticle that is an original to be transferred, 8 Is a reticle stage that supports the reticle 7. The inert gas is preferably helium, nitrogen, or argon.

  In the configuration described above, in the space S1, the pressure, flow rate, and temperature are managed from an unillustrated inert gas supply facility and an inert gas supply line from the blowout port 4 that blows the inert gas in the scanning direction provided in the surrounding member 3. The inert gas is sprayed to the optical path space so that the supplied inert gas is exhausted through the gap g, so that oxygen and moisture remaining in the space S2 are efficiently discharged.

  In order to minimize the influence of illuminance unevenness caused by the concentration distribution of oxygen, moisture, etc. in the exposure region, and maintain and improve the throughput, the inert gas is sprayed in the scanning direction.

  For this reason, in order to efficiently form a purge region, the purge region is a rectangular region whose longitudinal component is a component perpendicular to the scanning direction.

  2A and 2B show the configuration of the surface position detection mechanism formed between the projection optical system 1 and the photosensitive substrate 2. 12 (a) is the photosensitive substrate 2 position detecting device on the light projecting unit side, 12 (b) is the photosensitive substrate 2 position detecting device on the light receiving unit side, 13 is the measuring light, and 14 is the enclosure for the measuring light 13 to pass through. An opening portion 15 provided in the member 3 is a transmission member that transmits measurement light. By making measurement light 13 from the photosensitive substrate 2 position detecting device 12 (a) on the light projecting portion side enter the photosensitive substrate 2, and taking the reflected light into the photosensitive substrate 2 position detecting device 12 (b) on the light receiving portion side. In order to adjust the surface of the photosensitive substrate 2 to the focus of the projection optical system 1, the surrounding member 3 is provided with an opening 14 through which the measurement light 13 passes. Oxygen, moisture, etc. are mixed from the opening 14. The purge efficiency in the space S1 is reduced. For this reason, the transmission member 15 that transmits the measurement light 13 is installed at the opening of the opening inside the space S1. Further, pressure changes and temperature changes in the space through which the measurement light 13 passes cause measurement errors, and the photosensitive substrate position adjustment is out of order, causing deterioration in imaging performance. For this reason, control is performed by a gas temperature control device (not shown) so that the temperature difference between the gas in the surrounding member 3 and the surroundings is not more than a predetermined value that does not affect the focus measurement accuracy.

  In the purge region, if the pressure fluctuates, the optical performance will fluctuate, so that the pressure in the space through which the measuring light 13 passes is made constant by a pressure control device (not shown) so that it will be below a predetermined value. To control.

  Since the surrounding region and the projection optical system barrel are configured, the surface position detection mechanism can be arranged only outside the circle with a certain radius centered on the optical axis center of the projection optical system. Therefore, both the light projecting system and the light receiving system of the surface position detecting mechanism are configured outside the purge area, and the measurement light emitted from the light projecting system exit end of the surface position detecting mechanism is transmitted from the outside of the purge area to the surrounding area. The light passes through the member and is reflected on the substrate within the purge area. Similarly, the light passes through a transmission optical member arranged opposite to the incident side, reaches the outside of the purge area, and enters the light receiving system of the surface position detection mechanism. To do.

  The optical path of the surface position detection system causes a measurement error due to the fluctuation of the atmosphere outside the purge region. That is, at the distance d1 from the light projecting system emitting end of the surface position detecting mechanism to the purge area and the distance d1 from the purge area to the light receiving system incident end of the surface position detecting mechanism, the surface position detecting mechanism is affected by the measurement error due to the fluctuation of the atmosphere. Receive.

  For this reason, it is necessary to minimize the optical path length outside the purge region. Therefore, in the present invention, the optical path of the surface position detection mechanism is arranged in parallel with the longitudinal direction of the purge area, thereby minimizing the distance that the optical path of the surface position detection mechanism passes outside the purge area, and the atmosphere outside the purge area. Therefore, the influence of the measurement error due to the fluctuation of the atmosphere outside the purge region can be minimized.

  For comparison, FIG. 3 shows a configuration when the optical path of the surface position detection mechanism is arranged in a direction perpendicular to the longitudinal direction of the purge region. Even in this case, since the surrounding area and the projection optical system barrel are configured, the surface position detection mechanism can be arranged only outside the circle with a certain radius centered on the optical axis center of the projection optical system. Therefore, the distance d2 from the light projecting system emitting end of the surface position detecting mechanism to the purge region and the distance d2 from the purge region to the light receiving system incident end of the surface position detecting mechanism depend on the optical path of the surface position detecting mechanism along the length of the purge region. Compared with the case of arranging in parallel with the direction, d1 <d2. Accordingly, the distance that the optical path of the surface position detection mechanism passes outside the purge region is more affected by the fluctuation of the atmosphere that the measurement light of the surface position detection mechanism receives than the configuration of the surface position detection mechanism in the present invention.

  As described above, by configuring the optical path of the surface position detection mechanism in parallel with the longitudinal direction of the surrounding member and the longitudinal direction of the purge region, the distance that the optical path of the surface position detection mechanism passes through the purge region can be minimized. In addition, the influence of the fluctuation of the atmosphere that the surface position detection mechanism receives outside the purge region can be minimized.

  Next, the exposure method in the present invention will be described. As a light source in the illumination optical system 6, an ArF excimer laser with a wavelength of 193 [nm], an F2 excimer laser with a wavelength of 157 [nm], or the like is used. The pattern region drawn on the reticle 7 is irradiated by the illumination optical system 6, reduced by the projection optical system 1 at a predetermined magnification (for example, 1/4 or 1/5), and the photosensitive substrate held on the photosensitive substrate stage 5. 2 is transferred. By scanning the projection optical system 1 with the reticle 7 and the photosensitive substrate 2, the pattern area of the reticle 7 is transferred to the photosensitive substrate 2. This scanning exposure is repeated for a plurality of transfer regions on the photosensitive substrate 2.

(Second embodiment)
Next, a second embodiment will be described with reference to FIG. FIG. 4 is a schematic view according to a second embodiment of the present invention. In FIG. 4, the same reference numerals as in the previous embodiment are the same members.

  In the configuration shown in FIG. 4, in the space S <b> 1, pressure and flow rate from an inert gas supply facility (not shown) and an inert gas supply line from an outlet 4 that blows inert gas in the scanning direction provided in the surrounding member 3. The inert gas whose temperature is controlled is blown into the optical path space, and the supplied inert gas is exhausted from the inert gas recovery port 17 disposed opposite to the blowing port 4 to remain in the space S1. Oxygen and moisture that have been discharged are discharged efficiently.

  In order to minimize the influence of illuminance unevenness caused by the concentration distribution of oxygen, moisture, etc., and to maintain and improve throughput, the inert gas is sprayed from the supply port in the scanning direction and is placed facing it. It is exhausted from the recovery port.

  For this reason, in order to efficiently form a purge region, the purge region is a rectangular region whose longitudinal component is a component perpendicular to the scanning direction.

  Also in the configuration of the present embodiment, the optical path of the surface position detection mechanism is configured in parallel with the longitudinal direction of the surrounding member and the longitudinal direction of the purge region. As a result, even in the configuration of the present embodiment, the distance that passes outside the purge region in the optical path of the surface position detection mechanism is minimized, so that the influence of the measurement error that the surface position detection mechanism receives due to the fluctuation of the atmosphere is minimized. Can do.

  In the embodiments described so far, the projection optical system is a refractive optical system. However, the present invention is not limited to this, and may be a catadioptric optical system partially using a reflective element.

  Moreover, although the exposure range was demonstrated on the optical axis, it is not limited to this, The optical system which has the exposure range eccentric from the optical axis may be used.

  Furthermore, the present invention is not limited to the ArF excimer laser and the F2 excimer laser, and may be an i-line or KrF excimer laser, which effectively discharges contamination from the resist gas.

BRIEF DESCRIPTION OF THE DRAWINGS Schematic explaining the projection optical system photosensitive substrate side edge part structure of the scanning exposure apparatus which concerns on 1st Example of this invention. (A) is a detailed view for explaining the projection optical system photosensitive substrate side end structure of the scanning exposure apparatus according to the first embodiment of the present invention, and (b) is a scanning type according to the first embodiment of the present invention. The bottom view explaining the projection optical system photosensitive substrate side edge part structure of exposure apparatus. FIG. 6 is a bottom view for explaining a projection optical system photosensitive substrate side end structure when a surface position detection mechanism is configured to be orthogonal to the longitudinal direction of a purge region. The bottom view explaining the projection optical system photosensitive substrate side edge part structure of the scanning exposure apparatus which concerns on the 2nd Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Projection optical system 2 Photosensitive substrate 3 Enclosing member 4 Purge gas blow-out port 5 Photosensitive substrate stay 6 Illumination optical system 7 Reticle 8 Reticle stage 9 Exposure area 10 Projection optical system purge area 11 Flow of purge gas 12 (a) Photosensitive on the light projection unit Substrate 2 position detection device 12 (b) Photosensitive substrate 2 position detection device on the light receiving side 13 Measuring light 14 Aperture 15 Transmitting member 17 Purge gas recovery port 18 Scan direction S1 Purge area at the lower end of the projection optical system substrate d1 Surface position detection system And the gap between the projection optical system purge area d2 The gap between the surface position detection system and the projection optical system purge area g The gap between the photosensitive substrate 2 side end surface of the surrounding member 3 and the photosensitive substrate 2

Claims (7)

  The photosensitive substrate is irradiated with the mask pattern via the projection optical system, and the surrounding member that substantially surrounds the optical path space between the projection optical system and the photosensitive substrate, and the inert gas is blown in the facing member in the facing direction. Scanning comprising a gas supply port, an oblique incidence type detection system for detecting the position of the photosensitive substrate, and a space and an optical member for transmitting illumination light or detection light of the detection system provided in the surrounding portion 2. A scanning type exposure apparatus according to claim 1, wherein the surrounding portion has a rectangular parallelepiped shape, and the optical system of the detection system is arranged in a direction parallel to a longitudinal direction of the rectangular parallelepiped shape surrounding portion.   In the scanning exposure apparatus, the exposure area of the scanning exposure apparatus has a rectangular or arcuate slit shape, and the rectangular parallelepiped enclosure surrounds the exposure area, and the optical system of the detection system is the rectangular enclosure 2. The scanning exposure apparatus according to claim 1, wherein the scanning exposure apparatus is arranged in a direction parallel to the longitudinal direction of the first slit-shaped exposure region and the longitudinal direction of the front slit-shaped exposure region.   3. The scanning exposure apparatus according to claim 1, wherein one of the gas supply ports sprayed oppositely is used as a gas recovery port, and the flow of the purge gas is unidirectional.   The gas supply port, the gas recovery port, or the purge gas flows in a direction perpendicular to the longitudinal direction of the slit-shaped exposure region, the longitudinal direction of the surrounding portion, and the optical system arrangement direction of the detection system. The scanning exposure apparatus according to any one of claims 1 to 3.   5. The scanning exposure apparatus according to claim 1, wherein the exposure light is any one of a KrF excimer laser, an ArF excimer laser, or a fluorine excimer laser.   6. The scanning exposure apparatus according to claim 1, wherein the inert gas is one selected from nitrogen, helium, and argon.   7. A device manufacturing method, wherein a device is manufactured through a development processing step after transferring a pattern on a reticle onto a wafer using the scanning exposure apparatus according to claim 1.

Images