JP2005347464A - Working method of electrode formed on plate-type matter - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a working method capable of surely removing burs generated by cutting and cut waste adhered on a cutting surface, in the working method for cutting a plurality of electrodes projected on the surface of a plate and levelling its height. <P>SOLUTION: The working method for making uniform the heights of a plurality of projected electrodes on the surface of the plate, by cutting them employing a working device equipped with a chuck table with a retaining surface for retaining the plate type matter and a cutting unit with a cutting tool for cutting the plate type matter retained by a chuck table comprises a cutting process and a levelling process. In the cutting process, the electrodes formed on the plate retained by a chuck table are cut by positioning the cutting tool of a cutting unit at a predetermined cut-in position and moving the chuck table relatively with respect to the cutting tool in a working region. In the levelling process, the cutting surfaces of the plurality of electrodes cut by the cutting tool are levelled by moving the chuck table in the working region relatively with respect to the cutting tool, under a condition that the cutting tool of the cutting unit is maintained at the predetermined cut-in position after effecting the cutting process. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a processing method for aligning the heights of a plurality of electrodes formed on a surface of a plate-like object such as a semiconductor chip.

A semiconductor wafer in which a plurality of semiconductor chips are formed is divided into individual semiconductor chips by a dicing apparatus or the like, and the divided semiconductor chips are widely used in electric devices such as mobile phones and personal computers.
In recent years, in order to reduce the weight and size of electrical equipment, a bump having a protrusion of 50 to 100 μm is formed on an electrode of a semiconductor chip, and this bump is directly bonded to an electrode formed on a mounting substrate. A semiconductor chip called a flip chip has been developed and put into practical use. In addition, a technique for reducing the size by mounting a plurality of semiconductor chips on a substrate called an interposer or stacking them has been developed and put into practical use.

  However, each of the above-described technologies forms a plurality of protruding bumps (electrodes) on the surface of a substrate such as a semiconductor chip and bonds the substrates to each other via the protruding electrodes. ) Must be the same height. Grinding is generally used to align the height of the bumps (electrodes), but the workability is poor and requires a long time.

As a technique for forming a plurality of bumps (electrodes) on the surface of a substrate such as a semiconductor chip, a ball is formed by heating and melting the tip of a wire such as gold, and then the ball is applied to the electrode of the semiconductor chip. There is a method of forming a stud bump in which the head of the ball is broken by thermocompression bonding with ultrasonic waves. Bumps (electrodes) formed by this stud bump formation method are difficult to polish because needle-shaped wrinkles are generated when the head of a thermocompressed ball is broken, and a heated plate is used as a bump. The bumps are pressed to align the height of the bumps. (For example, refer to Patent Document 1.)
JP 2001-53097 A

  However, when the heated plate is pressed against the bumps so that the bumps have the same height, there is a problem that the bumps are short-circuited with adjacent bumps when the bump heads are crushed. In order to solve this problem, in the invention described in the above publication, an extra step of removing the tip of the bump is provided.

  In order to solve the above-described problems, the present applicant has proposed as a Japanese Patent Application No. 2003-110536 a processing apparatus that removes the tip portions of a plurality of electrodes formed on the surface of a plate-like object by cutting.

  Thus, when bumps (electrodes) are cut, burrs are generated when the bumps (electrodes) are made of a sticky metal such as gold, and the burrs cause a short circuit between the bumps (electrodes). There is. Moreover, since the cutting surface of the cut bump (electrode) is activated, a new problem has arisen in that cutting waste adheres to the cutting surface and shorts the bump (electrode).

  The present invention has been made in view of the above-mentioned facts, and the main technical problem has been generated by cutting in a processing method in which a plurality of electrodes formed to protrude from the surface of a plate-like object are cut and the height is made uniform. An object of the present invention is to provide a machining method capable of reliably removing burrs and cutting chips adhering to the cutting surface.

In order to solve the main technical problem, according to the present invention, a chuck table configured to be movable between a workpiece loading / unloading zone and a machining zone and having a holding surface for holding a plate-like object, A chuck table moving mechanism for moving the chuck table to the workpiece loading / unloading zone and the machining zone, a cutting unit including a cutting tool disposed in the machining zone and cutting a plate-like object held by the chuck table; A plurality of electrodes formed to protrude from the surface of the plate-like object are cut using a processing apparatus having a cutting unit feed mechanism that moves the cutting unit back and forth in a direction perpendicular to the holding surface of the chuck table. A processing method for aligning heights,
The cutting unit feed mechanism is operated to position the cutting tool of the cutting unit at a predetermined cutting position, and the chuck table is moved relative to the cutting tool in the processing area, whereby the cutting tool moves the chuck table to the chuck table. A cutting step of cutting a plurality of electrodes formed to protrude from the surface of the held plate-like object;
After the cutting process is performed, the chuck table is moved relative to the cutting tool in the processing area in a state where the cutting tool of the cutting unit is maintained at the predetermined cutting position. A tracing step of tracing the cutting surface of the plurality of electrodes formed,
The processing method of the electrode formed in the plate-shaped object characterized by this is provided.

  Further, according to the present invention, before carrying out the cutting step, the surface of the plate-like product is subjected to the resin layer coating step of covering the resin layer with a resin that dissolves with a solvent, and after the trace step is carried out, the plate shape Provided is a method for processing an electrode formed on a plate-like material, wherein a resin layer removing step of dissolving and removing a resin layer coated on the surface of the object with a solvent is performed.

  According to the present invention, the cutting tool is maintained at a predetermined cutting position after performing the cutting process of cutting a plurality of electrodes formed on the surface of the plate-like object held on the chuck table by the cutting tool. In the state, the trace process of tracing the cut surfaces of the plurality of cut electrodes is performed, so that burrs generated in the cutting process can be removed. Moreover, the cutting waste adhering to the cutting surface activated by cutting can also be removed by performing the said trace process.

  Hereinafter, a preferred embodiment of a method for processing an electrode formed on a plate according to the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 shows a semiconductor wafer 10 as a plate-like workpiece to be processed according to the present invention. A semiconductor wafer 10 shown in FIG. 1 has a plurality of semiconductor chips 110 formed in a matrix on the surface. A plurality of stud bumps (electrodes) 120 are formed on the surfaces of the plurality of semiconductor chips 110 formed on the semiconductor wafer 10. The stud bump (electrode) 120 is formed by, for example, a stud bump forming method. That is, as shown in FIG. 2 (a), the tip of the gold wire 121 inserted through the cavity 15 is heated and melted by discharge with an electric torch to form a ball 122. As shown in b), the electrode plate 111 made of, for example, aluminum or the like formed on the semiconductor chip 110 is thermocompression bonded together with ultrasonic waves, and is broken at the head of the ball 122. The plurality of stud bumps (electrodes) 120 formed in this way are in a state where the needle-like ridges 123 remain as shown in FIG. 2C, and the heights thereof vary.

Next, another embodiment of the workpiece will be described with reference to FIGS. 3 and 4.
The workpiece in the embodiment shown in FIGS. 3 and 4 is a semiconductor chip 110 in which the above-described semiconductor wafer 10 is individually divided. FIG. 3 shows a plurality of semiconductors on a protective tape 17 mounted on an annular frame 16. In FIG. 4, a plurality of semiconductor chips 110 are stuck on a support substrate (substrate) 18 by, for example, a double-sided adhesive tape. Note that the plurality of stud bumps (electrodes) 120 described above are formed on the surface of the semiconductor chip 110.

Hereinafter, a method for processing a plurality of electrodes formed to protrude from the surface of the plate-shaped workpiece described above will be described. The workpiece is described as the semiconductor wafer 10 shown in FIGS.
Here, a processing apparatus for processing a plurality of electrodes formed to protrude from the surface of a plate-like workpiece will be described with reference to FIG.
The processing apparatus in the illustrated embodiment includes an apparatus housing denoted as a whole by the number 2. The apparatus housing 2 has a rectangular parallelepiped main portion 21 that extends elongated and an upright wall 22 that is provided at the rear end portion (upper right end in FIG. 5) of the main portion 21 and extends substantially vertically upward. Yes. A pair of guide rails 221 and 221 extending in the vertical direction are provided on the front surface of the upright wall 22. The cutting unit 3 is mounted on the pair of guide rails 221 and 221 so as to be movable in the vertical direction.

  The cutting unit 3 includes a moving base 31 and a spindle unit 32 attached to the moving base 31. The movable base 31 is provided with a pair of legs 311 and 311 extending in the vertical direction on both sides of the rear surface. The pair of legs 311 and 311 is slidably engaged with the pair of guide rails 221 and 221. Guided grooves 312 and 312 are formed. A support member 313 is mounted on the front surface of the movable base 31 slidably mounted on the pair of guide rails 221 and 221 provided on the upright wall 22, and the spindle unit 32 is attached to the support member 313. It is done.

  The spindle unit 32 includes a spindle housing 321 mounted on a support member 313, a rotating spindle 322 rotatably disposed on the spindle housing 321, and a servo motor as a drive source for rotationally driving the rotating spindle 322. 323. The lower end of the rotary spindle 322 protrudes downward beyond the lower end of the spindle housing 321, and a disk-shaped tool mounting member 324 is provided at the lower end. A cutting tool 33 as a cutting tool is detachably mounted on the tool mounting member 324.

Here, the attachment / detachment structure of the cutting tool 33 to the tool mounting member 324 will be described with reference to FIG.
The tool mounting member 324 is provided with a cutting tool mounting hole 324a penetrating in a vertical direction in a part of the outer peripheral portion, and a female reaching the cutting tool mounting hole 324a from an outer peripheral surface corresponding to the cutting tool mounting hole 324a. A screw hole 324b is provided. The cutting tool 33 is inserted into the tool mounting member 324 by inserting the cutting tool 33 into the cutting tool mounting hole 324a of the tool mounting member 324 thus configured and screwing the tightening bolt 330 into the female screw hole 324b. Removably mounted. In the illustrated embodiment, the cutting tool 33 is formed by forming a cutting blade 332 made of diamond or the like at the tip of a cutting tool body 331 made of a tool steel such as a super steel alloy. Yes. The cutting tool 33 mounted on the tool mounting member 324 thus configured rotates in a plane parallel to the holding surface for holding the workpiece of the chuck table, which will be described later, as the rotary spindle 322 rotates. I'm damned.

Next, another embodiment of the tool mounting member on which the cutting tool 33 is mounted will be described with reference to FIG.
The tool mounting member 325 shown in FIG. 7 is directly attached to the moving base 31 constituting the cutting unit. The tool mounting member 325 is provided with a cutting tool mounting hole 325a penetrating in the vertical direction, and a female screw hole 325b reaching the cutting tool mounting hole 325a from the front end surface corresponding to the cutting tool mounting hole 325a. It has been. The cutting tool 33 is inserted into the tool mounting member 325 by inserting the cutting tool 33 into the cutting tool mounting hole 325a of the tool mounting member 325 thus configured and screwing the tightening bolt 330 into the female screw hole 325b. Removably mounted.

  Returning to FIG. 5, the processing apparatus in the illustrated embodiment moves the cutting unit 3 in the vertical direction along the pair of guide rails 221 and 221 (a direction perpendicular to a holding surface of a chuck table described later). A cutting unit feed mechanism 4 is provided. The cutting unit feed mechanism 4 includes a male screw rod 41 disposed on the front side of the upright wall 22 and extending substantially vertically. The male screw rod 41 is rotatably supported by bearing members 42 and 43 whose upper end and lower end are attached to the upright wall 22. The upper bearing member 42 is provided with a pulse motor 44 as a drive source for rotationally driving the male screw rod 41, and the output shaft of the pulse motor 44 is connected to the male screw rod 41 by transmission. A connecting portion (not shown) that protrudes rearward from the center portion in the width direction is also formed on the rear surface of the movable base 31, and a through female screw hole that extends in the vertical direction is formed in the connecting portion, The male screw rod 41 is screwed into the female screw hole. Therefore, when the pulse motor 44 rotates forward, the moving base 31, that is, the cutting unit 3, is lowered or advanced, and when the pulse motor 44 reversely moves, the moving base 31, that is, the cutting unit 3, is raised or retracted.

  The description will be continued with reference to FIGS. 5 and 8. A substantially rectangular processing work portion 211 is formed on the rear half of the main portion 21 of the housing 2. The processing work portion 211 includes a chuck table mechanism. 5 is disposed. The chuck table mechanism 5 includes a support base 51 and a disk-shaped chuck table 52 disposed on the support base 51 so as to be rotatable about a rotation center axis extending substantially vertically. The support base 51 slides on a pair of guide rails 23 and 23 extending in the direction indicated by the arrows 23a and 23b in the front-rear direction (the direction perpendicular to the front surface of the upright wall 22) on the processing work unit 211. The workpiece loading / unloading area 24 shown in FIG. 5 (position indicated by a solid line in FIG. 8) and the cutting tool 33 constituting the spindle unit 32 are opposed to each other by a chuck table moving mechanism 56 described later. And the machining area 25 to be moved (position indicated by a two-dot chain line in 8).

  The chuck table 52 has a mounting surface 52 a on which an object to be processed is mounted, and is rotatably supported by the support base 51. The chuck table 52 is rotated by a servo motor 53 connected to a rotating shaft (not shown) mounted on the lower surface thereof. The chuck table 52 is made of an appropriate porous material such as porous ceramics, and is connected to suction means (not shown). Accordingly, by selectively communicating the chuck table 52 with a suction means (not shown), the workpiece placed on the placement surface 52a is sucked and held. The illustrated chuck table mechanism 5 includes a cover member 54 (see FIG. 5) that has a hole through which the chuck table 52 is inserted, covers the support base 51 and the like, and is movably disposed together with the support base 51. ing.

  If the description continues with reference to FIG. 8, the machining apparatus in the illustrated embodiment includes a chuck table moving mechanism 56 that moves the chuck table mechanism 5 along the pair of guide rails 23 in the directions indicated by the arrows 23 a and 23 b. It has. The chuck table moving mechanism 56 includes a male screw rod 561 disposed between the pair of guide rails 23 and 23 and extending in parallel with the guide rails 23 and 23, and a servo motor 562 that rotationally drives the male screw rod 561. The male screw rod 561 is screwed into a screw hole 511 provided in the support base 51, and the tip end portion thereof is rotatably supported by a bearing member 563 attached by connecting a pair of guide rails 23 and 23. ing. The servo motor 562 has a drive shaft connected to the base end of the male screw rod 561 by transmission. Accordingly, when the servo motor 562 rotates in the forward direction, the support base 51, that is, the chuck table mechanism 5, moves in the direction indicated by the arrow 23a. When the servo motor 562 rotates in the reverse direction, the support base 51, that is, the chuck table mechanism 5, moves in the direction indicated by the arrow 23b. It can be moved. The chuck table mechanism 5 that is moved in the directions indicated by the arrows 23a and 23b is selectively positioned in a workpiece loading / unloading area indicated by a solid line and a machining area indicated by a two-dot chain line in FIG. Further, the chuck table mechanism 5 is reciprocated in the direction indicated by the arrows 23a and 23b over the predetermined range, that is, in parallel with the holding surface 52a in the machining area.

  Returning to FIG. 5, the explanation will be continued. On both sides of the support base 51 constituting the chuck table mechanism 5 in the moving direction, as shown in FIG. Bellows means 57 and 58 covering the rails 23 and 23, the male screw rod 561, the servo motor 562 and the like are attached. The bellows means 57 and 58 can be formed from any suitable material such as campus cloth. The front end of the bellows means 57 is fixed to the front wall of the processing unit 211, and the rear end is fixed to the front end surface of the cover member 54 of the chuck table mechanism 5. The front end of the bellows means 58 is fixed to the rear end surface of the cover member 54 of the chuck table mechanism 5, and the rear end is fixed to the front surface of the upright wall 22 of the apparatus housing 2. When the chuck table mechanism 5 is moved in the direction indicated by the arrow 23a, the bellows means 57 is expanded and the bellows means 58 is contracted, and when the chuck table mechanism 5 is moved in the direction indicated by the arrow 23b, the bellows means. 57 is contracted and the bellows means 58 is extended.

  On the front half of the main portion 21 of the apparatus housing 2, a first cassette mounting portion 6a, a second cassette mounting portion 7a, a workpiece temporary storage portion 8a, and a cleaning portion 9a are provided. ing. A first cassette 6 that accommodates a workpiece before processing is placed on the first cassette placement portion 6a, and a second cassette that accommodates a workpiece after processing is placed on the second cassette placement portion 7a. The cassette 7 is placed. In the workpiece temporary placement portion 8a, the workpiece temporary placement means for temporarily placing the workpiece before processing carried out from the first cassette 6 placed on the first cassette placement portion 6a. 8 is disposed. The cleaning unit 9a is provided with cleaning means 9 for cleaning the processed workpiece.

  A workpiece conveying means 11 is disposed between the first cassette placing portion 6a and the second cassette placing portion 7a. The workpiece conveying means 11 is a first cassette placing portion. The unprocessed workpiece housed in the first cassette 6 placed on the part 6a is carried out to the workpiece temporary storage means 8 and the processed workpiece cleaned by the cleaning means 9 is used as the first workpiece. It is transported to the second cassette 7 placed on the second cassette placement section 7a. A workpiece loading means 12 is disposed between the workpiece temporary placing portion 8a and the workpiece loading / unloading area 24, and the workpiece loading means 12 is the workpiece loading means 12. The workpiece before processing placed on the temporary placing means 8 is transferred onto the chuck table 52 of the chuck table mechanism 5 positioned in the workpiece loading / unloading area 24. A workpiece unloading means 13 is disposed between the workpiece loading / unloading area 24 and the cleaning unit 9a. The workpiece unloading means 13 is a workpiece loading / unloading area. The processed workpiece placed on the chuck table 52 positioned at 24 is conveyed to the cleaning means 9.

  In order to carry out the processing method of the electrode formed on the plate according to the present invention using the processing apparatus shown in FIG. 5 configured as described above, the semiconductor wafer 10 described above is stored in the first cassette 6. The first cassette 6 is placed on the first cassette placement portion 6 a of the apparatus housing 2. On the other hand, an empty second cassette 7 is placed on the second cassette placement portion 7 a of the apparatus housing 2.

  The semiconductor wafer 10 as a workpiece accommodated in the first cassette 6 is conveyed by the vertical movement and the advance / retreat operation of the workpiece conveyance means 11 and placed on the workpiece temporary placement means 8. The semiconductor wafer 10 placed on the workpiece temporary placing means 8 is positioned in the workpiece loading / unloading area 24 by the turning operation of the workpiece loading means 12 after being centered here. It is placed on the chuck table 52 of the chuck table mechanism 5. The semiconductor wafer 10 placed on the chuck table 52 is sucked and held on the chuck table 52 by suction means (not shown).

  When the semiconductor wafer 10 is sucked and held on the chuck table 52, the chuck table moving mechanism 56 (see FIG. 8) is operated to move the chuck table mechanism 5 in the direction indicated by the arrow 23a, and the chuck holding the semiconductor wafer 10 is held. The table 52 is positioned in the machining area 25. When the chuck table 52 holding the semiconductor wafer 10 is positioned in the processing region 25 in this way, a plurality of stud bumps (electrodes) 120 formed on the surface of the semiconductor chip 110 provided on the semiconductor wafer 10 are provided. A cutting process for cutting is performed.

First, the cutting process by the cutting unit 3 of the embodiment shown in FIGS. 5 and 6 will be described with reference to FIG.
In the case of the cutting unit 3 according to the embodiment shown in FIGS. 5 and 6, the rotary spindle 322 is driven to rotate, and the tool mounting member 324 to which the cutting tool 33 is attached is moved in the direction indicated by the arrow 324A in FIG. It rotates at the rotation speed. Then, the cutting unit 3 is lowered and the cutting tool 33 is positioned at a predetermined cutting position. Next, the chuck table 52 holding the semiconductor wafer 10 is moved from the position indicated by the solid line in FIG. 9 in the direction indicated by the arrow 52A (rightward in FIG. 9) at a predetermined feed speed. The feed rate may be about 2 mm / second when the cutting width of the cutting blade 332 of the cutting tool 33 is 20 μm or more, for example. Then, as shown by a two-dot chain line in FIG. 9, the cutting process is completed when the center of the semiconductor wafer 10 held on the chuck table 52 moves to the center position of the tool mounting member 324. As a result, the upper ends of a plurality of stud bumps (electrodes) 120 formed on the surface of the semiconductor chip 110 provided on the semiconductor wafer 10 by the cutting blade 332 of the cutting tool 33 that rotates as the rotary spindle 322 rotates. It is scraped off and its height is aligned as shown in FIG. However, burrs 121 are generated on the cutting surface 120a of the cut stud bump (electrode) 120, and the cut cutting surface 120a is activated, so that cutting waste 122 may adhere.

  In order to remove the above-described burrs 121 and cutting scraps 122, in the present invention, the cutting surfaces 120a of a plurality of stud bumps (electrodes) 120 are cut by the cutting bit 33 while the cutting bit 33 is maintained at the predetermined cutting position. Trace process is performed. This tracing process is performed as follows. That is, in the tracing process, as shown by a two-dot chain line in FIG. 9, the cutting tool 33 is moved from the end state of the cutting process in which the center of the semiconductor wafer 10 held on the chuck table 52 has moved to the center position of the tool mounting member 324. The chuck table 52 holding the semiconductor wafer 10 while rotating the tool mounting member 324 to which the cutting tool 33 is attached in the direction indicated by the arrow 324A in FIG. 9 at a rotational speed of, for example, 6000 rpm while maintaining the predetermined cutting position. Is moved at a predetermined feed speed from the position indicated by the two-dot chain line in FIG. 9 in the direction indicated by the arrow 52B (leftward in FIG. 9). The feed rate may be about 2 mm / second, for example. As a result, the cutting surfaces 120a of the plurality of stud bumps (electrodes) 120 cut in the cutting step are traced by the cutting blade 332 of the cutting tool 33 that rotates as the rotary spindle 322 rotates. Accordingly, the burr 121 generated on the cutting surface 120a of the stud bump (electrode) 120 and the cutting waste 122 attached to the cutting surface 120a are removed as shown in FIG. When the semiconductor wafer 10 held on the chuck table 52 reaches the position indicated by the solid line in FIG. 9 after performing the tracing step, the position of the semiconductor wafer 10 held on the chuck table 52 again is indicated by the solid line in FIG. It is desirable that the tracing process is performed twice or more by moving to the position indicated by the two-dot chain line at the predetermined feed speed in the direction indicated by the arrow 52A (rightward in FIG. 9).

Next, the cutting process and the tracing process by the cutting unit 3 of the embodiment shown in FIG. 7 will be described with reference to FIG.
In the case of the cutting unit 3 of the embodiment shown in FIG. 7, first, the moving base 31 constituting the cutting unit 3 is lowered, and the cutting tool mounted on the tool mounting member 325 mounted on the moving base 31. 33 is positioned at a predetermined cutting position. Next, while the chuck table 52 holding the semiconductor wafer 10 is rotated in the direction indicated by the arrow 52C in FIG. 10 at a rotational speed of, for example, 2000 rpm, the position indicated by the solid line in FIG. )) At a predetermined feed rate. The feed rate may be about 0.6 mm / second when the cutting width of the cutting blade 332 of the cutting tool 33 is 20 μm or more, for example. Then, as shown by a two-dot chain line in FIG. 10, the cutting process is completed when the center of the chuck table 52 moves to a position where it reaches the cutting tool 33. As a result, the upper ends of a plurality of stud bumps (electrodes) 120 formed on the surface of the semiconductor chip 110 provided on the semiconductor wafer 10 are scraped off by the cutting blade 332 of the cutting tool 33, as shown in FIG. Height is aligned. In this embodiment as well, burrs 121 are generated on the cutting surface 120a of the cut stud bump (electrode) 120, and the cut cutting surface 120a is activated, so that cutting chips 122 may adhere. .

  Next, a tracing process for removing the burr 121 and the cutting waste 122 described above is performed. In this trace process, as shown by a two-dot chain line in FIG. 10, the cutting tool 33 is moved from the end state of the cutting process in which the center of the semiconductor wafer 10 held on the chuck table 52 has moved to a position reaching the cutting tool 33. The chuck table 52 holding the semiconductor wafer 10 is rotated while rotating the chuck table 52 holding the semiconductor wafer 10 in the direction indicated by the arrow 52C in FIG. At a predetermined feed speed in the direction indicated by the arrow 52B (leftward in FIG. 10) from the position indicated by the two-dot chain line. The feed rate may be about 2 mm / second, for example. As a result, the cutting surfaces 120a of the plurality of stud bumps (electrodes) 120 cut in the cutting process are traced by the cutting blade 332 of the cutting tool 33. Accordingly, the burr 121 generated on the cutting surface 120a of the stud bump (electrode) 120 as shown in FIG. 11 and the cutting waste 122 attached to the cutting surface 120a as shown in FIG. 11 are removed as shown in FIG. When the semiconductor wafer 10 held on the chuck table 52 reaches the position indicated by the solid line in FIG. 10 after performing the tracing step, the position of the semiconductor wafer 10 held on the chuck table 52 again is indicated by the solid line in FIG. It is desirable that the tracing process is performed twice or more by moving to the position indicated by the two-dot chain line at the predetermined feed speed in the direction indicated by the arrow 52A (to the right in FIG. 9).

  When the cutting process and the tracing process are completed as described above, the cutting unit 3 is raised and the rotation of the chuck table 52 is stopped. Next, the chuck table 52 is moved in the direction indicated by the arrow 23 b in FIG. 5 to be positioned in the workpiece loading / unloading area 24, and the suction holding of the cut semiconductor wafer 10 on the chuck table 52 is released. Then, the semiconductor wafer 10 whose suction holding is released is carried out by the workpiece carrying-out means 13 and conveyed to the cleaning means 9. The semiconductor wafer 10 conveyed to the cleaning means 9 is cleaned here. The semiconductor wafer 10 cleaned by the cleaning unit 9 is stored in a predetermined position of the second cassette 7 by the workpiece transfer unit 11.

Next, another embodiment of a method for processing an electrode formed on a plate according to the present invention will be described with reference to FIGS.
In this embodiment, a resin layer coating step of coating the resin layer with a resin that dissolves with a solvent on the surface of the plate-like object is performed before the cutting step. In the illustrated embodiment, the resin layer coating step is performed by a spin coater 20 as shown in FIG. The spin coater 20 includes a chuck table 20a provided with suction holding means, and a nozzle 20b arranged above the center of the chuck table 20a. The semiconductor wafer 10 is placed on the chuck table 20a of the spin coater 20, and a suction means (not shown) is operated to suck and hold the semiconductor wafer 10 on the chuck table 20a. At this time, the semiconductor wafer 10 is placed on the back side with the front side facing up. Next, a liquid resin is dropped from the nozzle 20b onto the center of the surface of the semiconductor wafer 10 while rotating the chuck table 20a, so that the liquid resin flows to the outer peripheral portion by centrifugal force. The resin flowing on the surface of the semiconductor wafer 10 to the outer peripheral portion in this way is cured with time to form a resin layer 130 that covers the surface of the semiconductor wafer 10 as shown in FIG. As the resin for covering the surface of the semiconductor wafer, a resin that can be dissolved and removed by a solvent is used, and a water-soluble resin such as polyethylene glycol and polyvinyl alcohol that can be removed by water is particularly desirable.

  If the resin layer coating step is performed as described above, the cutting step is performed. By performing the cutting process on the semiconductor wafer 10 having the resin layer 130 formed on the surface by the resin layer coating process described above, the semiconductor wafer 110 is formed on the surface of the semiconductor chip 110 provided on the semiconductor wafer 10 as shown in FIG. Further, the upper ends of the plurality of stud bumps (electrodes) 120 are scraped off together with the resin layer 130, and the heights thereof are made uniform. In this cutting process, since the stud bump (electrode) 120 is cut together with the resin layer 130, the occurrence of burrs is extremely small, and the resin layer 130 is formed between the stud bumps (electrodes) 120. No cutting waste accumulates between the electrodes 120).

  However, as shown in FIG. 15, burrs 121 are generated on the cut surface 120a of the cut stud bump (electrode) 120, and the cut cutting surface 120a is activated, so that the cutting waste 122 adheres. There is. Therefore, in order to remove the burr 121 and the cutting waste 122, the tracing process described above is performed. By performing the tracing process, the burr 121 generated on the cutting surface 120a of the stud bump (electrode) 120 and the cutting waste 122 attached to the cutting surface 120a as shown in FIG. Removed.

  If the resin layer coating process, the cutting process, and the tracing process are performed as described above, the resin layer removal process for dissolving and removing the resin layer 130 coated on the surface of the semiconductor wafer 10 with a solvent is performed. In the illustrated embodiment, this oil layer removing step can be performed by the cleaning means of the processing apparatus shown in FIG. That is, in the illustrated embodiment, since the resin layer 130 coated on the surface of the semiconductor wafer 10 is formed of a water-soluble resin, it is dissolved and washed away with washing water. As a result, as shown in FIG. 17, the resin layer 130 coated on the surface 10a of the semiconductor wafer 10 is removed, and the bumps (electrodes) 120 are exposed.

  If the resin layer removal step is performed as described above, the semiconductor wafer 10 from which the resin layer has been removed is stored in a predetermined position of the second cassette 7 by the workpiece transfer means 11.

The top view of the semiconductor wafer as a to-be-processed object which consists of a plate-shaped object. FIG. 3 is an explanatory view of a stud bump forming method for forming bumps (electrodes) on a plurality of semiconductor chips provided on the semiconductor wafer shown in FIG. 1. The perspective view which shows the state which supported the semiconductor chip as a to-be-processed object which consists of a plate-shaped object in the cyclic | annular flame | frame. The perspective view which shows the state which supported the semiconductor chip as a to-be-processed object which consists of a plate-shaped object on the support substrate (substrate). The perspective view which shows one Embodiment of the processing apparatus which implements the cutting process in the processing method of the electrode formed in the plate-shaped object by this invention. The perspective view which shows one Embodiment of the cutting unit with which the processing apparatus shown in FIG. 5 is equipped. The perspective view which shows other embodiment of the cutting unit with which the processing apparatus shown in FIG. 5 is equipped. The perspective view which shows the chuck table mechanism and chuck table moving mechanism with which the processing apparatus shown in FIG. 5 is equipped. Explanatory drawing of the cutting process implemented using the cutting unit shown in FIG. Explanatory drawing of the cutting process implemented using the cutting unit shown in FIG. The principal part expanded sectional view of the semiconductor wafer as a plate-shaped to-be-processed object which implemented the cutting process in the processing method of the electrode formed in the plate-shaped object by this invention. The principal part expanded sectional view of the semiconductor wafer as a plate-shaped to-be-processed object which implemented the trace process after implementing the cutting process in the processing method of the electrode formed in the plate-shaped object by this invention. Explanatory drawing of the resin layer coating | coated process in the processing method of the electrode formed in the plate-shaped object by this invention. The principal part expanded sectional view of the semiconductor wafer as a plate-shaped to-be-processed object in which the resin layer was formed by the resin layer coating process shown in FIG. The principal part expanded sectional view of the semiconductor wafer as a plate-shaped to-be-processed object which implemented the cutting process after implementing the resin layer coating process. The principal part expanded sectional view of the semiconductor wafer as a plate-shaped workpiece which implemented the trace process after implementing the resin layer coating process and the cutting process. The principal part expanded sectional view of the semiconductor wafer as a plate-shaped workpiece which implemented the resin layer removal process after implementing the resin layer coating process, the cutting process, and the trace process.

Explanation of symbols

2: Device housing 3: Grinding unit 31: Moving base 32: Spindle unit 324, 325: Tool mounting member 33: Grinding tool 4: Grinding unit feed mechanism 5: Chuck table mechanism 52: Chuck table 56: Chuck table moving mechanism 6 : First cassette 7: Second cassette 9: Temporary workpiece placing means 9: Cleaning means 11: Workpiece conveying means 12: Workpiece carrying means 13: Workpiece carrying means 10: Semiconductor wafer 110: Semiconductor chip 111: Electrode plate 120: Bump (electrode)
130: Resin layer 20: Spin coater

Claims (2)

A chuck table configured to be movable between a workpiece loading / unloading zone and a machining zone and having a holding surface for holding a plate-like object, and the chuck table is moved to a workpiece loading / unloading zone and a machining zone A chuck table moving mechanism, a cutting unit provided with a cutting tool disposed in the processing area for cutting a plate-like object held by the chuck table, and a direction perpendicular to the holding surface of the chuck table. Using a processing device having a cutting unit feed mechanism that advances and retreats to and from the surface of the plate-like object, a plurality of electrodes formed to protrude and align the height,
The cutting unit feed mechanism is operated to position the cutting tool of the cutting unit at a predetermined cutting position, and the chuck table is moved relative to the cutting tool in the processing area, whereby the cutting tool moves the chuck table to the chuck table. A cutting step of cutting a plurality of electrodes formed to protrude from the surface of the held plate-like object;
After the cutting process is performed, the chuck table is moved relative to the cutting tool in the processing area in a state where the cutting tool of the cutting unit is maintained at the predetermined cutting position. A tracing step of tracing the cutting surface of the plurality of electrodes formed,
A method for processing a plurality of electrodes formed to protrude from the surface of a plate-like object. Before carrying out the cutting step, the surface of the plate-like product is coated with a resin layer with a resin that dissolves with a solvent. After the trace step is carried out, the surface of the plate-like product is coated. The method for processing a plurality of electrodes formed to protrude from the surface of the plate-like material according to claim 1, wherein a resin layer removing step of dissolving and removing the resin layer with a solvent is performed.

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