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JP2005236182A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
JP2005236182A
JP2005236182A JP2004046070A JP2004046070A JP2005236182A JP 2005236182 A JP2005236182 A JP 2005236182A JP 2004046070 A JP2004046070 A JP 2004046070A JP 2004046070 A JP2004046070 A JP 2004046070A JP 2005236182 A JP2005236182 A JP 2005236182A
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electrode plate
side electrode
type semiconductor
chip
plate
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Nobuhito Nakayama
亘人 中山
Shinichi Kakiuchi
伸一 垣内
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Pentax Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an illuminating light having no uneven brightness in a lighting system having a semiconductor light emitting device. <P>SOLUTION: A first anode side electrode plate 20 is fixed to a p-type semiconductor 11 of a chip 10, and a first cathode side electrode plate 30 is fixed to an n-type semiconductor 12. An anode side lead 40 is connected to an anode side electrode plate 50, and a cathode side lead 60 is connected to a second cathode side electrode plate 70. The plate 20 and the plate 50 are connected by a plurality of bonding wires 90. The plate 30 and the plate 70 are connected by a plurality of bonding wires 91. Thin wires with their diameters thinner than usual are used for the wires 90, 91. The wires 90, 91 are arranged so as to radially extend from the center of an LED chip 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明はＬＥＤを用いた照明装置に関する。   The present invention relates to a lighting device using LEDs.

近年、半導体発光素子の分野では高輝度ＬＥＤや白色ＬＥＤ等が開発されており、その用途範囲は広がってきている。例えば、カメラのフラッシュ装置に、従来用いられていたキセノン放電管に替えて白色ＬＥＤを備えた照明装置を用いたものがある。駆動にコンデンサーを必要とするキセノン放電管が有する、カメラ内のスペースを狭めてしまう、高電圧が流れるため危険である、といった問題も白色ＬＥＤを用いれば解消されるからである。白色ＬＥＤから出射された光は、投光光学系を介して被写体に照射される（例えば特許文献１）。
特開２００２−１４８６８６号公報 In recent years, high-brightness LEDs, white LEDs, and the like have been developed in the field of semiconductor light-emitting devices, and their application range has expanded. For example, there is a camera flash device that uses an illumination device including a white LED instead of a conventionally used xenon discharge tube. This is because problems such as a xenon discharge tube that requires a capacitor for driving, a space in the camera being narrowed, and a danger due to high voltage flow can be eliminated by using a white LED. The light emitted from the white LED is irradiated to the subject via the light projecting optical system (for example, Patent Document 1).
JP 2002-148686 A

ところが、ＬＥＤのチップの周囲にはリード、ワイヤが配設されており、発光する部材（チップ）と発光しない部材（リード、ワイヤ）が混在している。従って、ＬＥＤから出射された光を投光光学系を介して射出すると、被写体側においてチップ及びその周囲の影の像も投影され、照射輝度にむらが生じるという問題がある。   However, leads and wires are disposed around the LED chip, and members that emit light (chips) and members that do not emit light (leads and wires) are mixed. Therefore, when the light emitted from the LED is emitted through the light projecting optical system, there is a problem that an image of the chip and its surrounding shadow is also projected on the subject side, resulting in uneven illumination brightness.

本発明は、以上の問題を解決するものであり、光源として半導体発光素子を備える照明装置において、輝度むらのない照明光を供給することを目的とする。   The present invention solves the above-described problems, and an object of the present invention is to supply illumination light without unevenness in luminance in a lighting device including a semiconductor light emitting element as a light source.

本発明に係る半導体発光素子は、発光体のｐ型半導体と第１の電極リードとを電気的に接続するためのボンディングワイヤと発光体のｎ型半導体と第２の電極リードとを電気的に接続するためのボンディングワイヤがそれぞれ複数設けられ、これら複数のボンディングワイヤの接合点が均一に分散されていることを特徴とする。   The semiconductor light emitting device according to the present invention electrically connects a bonding wire for electrically connecting the p-type semiconductor of the light emitter and the first electrode lead, and the n-type semiconductor of the light emitter and the second electrode lead. A plurality of bonding wires for connection are provided, and junction points of the plurality of bonding wires are uniformly distributed.

好ましくは、複数のボンディングワイヤは、発光体の中心部を中心として放射状に配置される。   Preferably, the plurality of bonding wires are arranged radially with the central portion of the light emitter as the center.

例えば、ｐ型半導体は第１の電極板に接続され、第１の電極リードは第２の電極板に接続され、ｎ型半導体は第３の電極板に接続され、第２の電極リードは第４の電極板に接続され、第１の電極板と第２の電極板、及び第３の電極板と第４の電極板が、それぞれボンディングワイヤで接続される構成としてもよい。   For example, a p-type semiconductor is connected to a first electrode plate, a first electrode lead is connected to a second electrode plate, an n-type semiconductor is connected to a third electrode plate, and a second electrode lead is The first electrode plate and the second electrode plate, and the third electrode plate and the fourth electrode plate may be connected by bonding wires, respectively.

以上のように本発明よれば、半導体発光素子において発光体の半導体と電極を電気的に接続するためのボンディングワイヤが複数設けられ、これらのボンディングワイヤが均一に分散して配置される。従って、発光体から出射された光が被写体に照射される際、ボンディングワイヤの影の映り込みの影響を抑えることができ、輝度むらを低減することができる。   As described above, according to the present invention, a plurality of bonding wires for electrically connecting a semiconductor of a light emitter and an electrode are provided in a semiconductor light emitting device, and these bonding wires are uniformly distributed. Therefore, when the light emitted from the light emitter is irradiated onto the subject, the influence of the shadow of the bonding wire can be suppressed, and the luminance unevenness can be reduced.

図１は本発明に係る第１実施形態が適用されるＬＥＤ１の要部の平面図、図２はＬＥＤ１の層構造を模式的に示す図である。チップ１０のｐ型半導体１１には第１のアノード側電極板２０が取り付けられ、ｎ型半導体１２には第１のカソード側電極板３０が取り付けられている。第１のアノード側電極板２０は略二等辺三角形を呈する薄板状の部材である。第１のカソード側電極板３０は、第１のアノード側電極板２０と同様、薄板状の部材である。第１のカソード側電極板３０は、略二等辺三角形を呈する部分と、二等辺三角形の底辺の両端部に相当する位置から底辺に直交する方向に沿って平行に伸びる一対の細線状の部分とを有する。第１のアノード側電極板２０と第１のカソード側電極板３０は、第１のアノード側電極板２０において二等辺三角形の長さの等しい２辺に相当する一対の縁部と、第１のカソード側電極板３０において二等辺三角形の長さの等しい２辺に相当する一対の縁部と、平行に延びる一対の細線状の部分とが、全体として略６角形を形成するよう配設される。   FIG. 1 is a plan view of a main part of an LED 1 to which the first embodiment according to the present invention is applied, and FIG. 2 is a diagram schematically showing a layer structure of the LED 1. A first anode side electrode plate 20 is attached to the p-type semiconductor 11 of the chip 10, and a first cathode side electrode plate 30 is attached to the n-type semiconductor 12. The first anode side electrode plate 20 is a thin plate-like member having a substantially isosceles triangle. The first cathode side electrode plate 30 is a thin plate-like member like the first anode side electrode plate 20. The first cathode-side electrode plate 30 includes a portion exhibiting a substantially isosceles triangle, and a pair of thin line-shaped portions extending in parallel along a direction orthogonal to the bottom from positions corresponding to both ends of the bottom of the isosceles triangle. Have The first anode side electrode plate 20 and the first cathode side electrode plate 30 include a pair of edges corresponding to two sides having the same length of an isosceles triangle in the first anode side electrode plate 20, In the cathode side electrode plate 30, a pair of edge portions corresponding to two sides having the same length of an isosceles triangle and a pair of thin wire portions extending in parallel form a substantially hexagonal shape as a whole. .

アノード側リード４０は第２のアノード側電極板５０に接続され、カソード側リード６０は第２のカソード側電極板７０に接続されている。凹面状のリフレクタ８０と第２のアノード側電極板５０及び第２のカソード側電極板７０との間には絶縁層８１が設けられ、電気的に絶縁されている。リフレクタ８０とチップ１０のｎ型半導体１２との間には、絶縁層８２が設けられ、電気的に絶縁されている。   The anode side lead 40 is connected to the second anode side electrode plate 50, and the cathode side lead 60 is connected to the second cathode side electrode plate 70. An insulating layer 81 is provided between the concave reflector 80 and the second anode side electrode plate 50 and the second cathode side electrode plate 70 to be electrically insulated. An insulating layer 82 is provided between the reflector 80 and the n-type semiconductor 12 of the chip 10 to be electrically insulated.

第１のアノード側電極板２０と第２のアノード側電極板５０は複数のボンディングワイヤ９０で接続される。同様に、第１のカソード側電極板３０と第２のカソード側電極板７０は複数のボンディングワイヤ９１で接続される。これらのボンディングワイヤ９０、９１は、従来のＬＥＤに用いられているものよりも径の細いワイヤ、例えば径が約０．０１ｍｍのワイヤが用いられる。   The first anode side electrode plate 20 and the second anode side electrode plate 50 are connected by a plurality of bonding wires 90. Similarly, the first cathode side electrode plate 30 and the second cathode side electrode plate 70 are connected by a plurality of bonding wires 91. These bonding wires 90 and 91 are wires having a diameter smaller than that used in conventional LEDs, for example, a wire having a diameter of about 0.01 mm.

ボンディングワイヤ９０の第１のアノード側電極板２０との接合点は、図１に示すように長さの等しい一対の縁部に沿って均一に分散されている。ボンディングワイヤ９０の第２のアノード側電極板５０との接合点は、リフレクタ８０の縁部に沿って均一に分散されている。ボンディングワイヤ９１の第１カソード側電極板３０との接合点は、二等辺三角形の長さの等しい２辺に相当する一対の縁部、及び一対の細線状の部分に沿って、均一に分散されている。ボンディングワイヤ９１の第２のカソード側電極板７０との接合点は、リフレクタ８０の縁部に沿って均一に分散されている。以上のように、複数のボンディングワイヤ９０、９１は、ＬＥＤチップ１０の中心から放射線状に延びるよう配置される。   The bonding points of the bonding wires 90 with the first anode-side electrode plate 20 are uniformly distributed along a pair of edges having the same length as shown in FIG. Bonding points of the bonding wire 90 and the second anode-side electrode plate 50 are uniformly distributed along the edge of the reflector 80. Bonding points of the bonding wire 91 and the first cathode side electrode plate 30 are uniformly distributed along a pair of edges corresponding to two sides having the same length of an isosceles triangle and a pair of thin line portions. ing. Bonding points of the bonding wire 91 and the second cathode side electrode plate 70 are uniformly distributed along the edge of the reflector 80. As described above, the plurality of bonding wires 90 and 91 are arranged to extend radially from the center of the LED chip 10.

図３は本発明に係る第２実施形態が適用されるＬＥＤ１００の平面図である。図３において、第１実施形態と同様の部材には同一の符号が付されている。図３に示されるように、ＬＥＤ１００は２組のチップ群１００Ａ、１００Ｂを有し、チップ群１００Ａは２つのチップ１０１、１０２を有し、チップ群１００Ｂは２つのチップ１０３、１０４を有する。これらのチップ１０１〜１０４は、第１実施形態のチップ１０と同様の構成を有する。   FIG. 3 is a plan view of the LED 100 to which the second embodiment according to the present invention is applied. In FIG. 3, the same members as those in the first embodiment are denoted by the same reference numerals. As shown in FIG. 3, the LED 100 has two sets of chip groups 100A and 100B, the chip group 100A has two chips 101 and 102, and the chip group 100B has two chips 103 and 104. These chips 101 to 104 have the same configuration as the chip 10 of the first embodiment.

チップ群１００Ａにおいて、チップ１０１のｎ型半導体１０１Ｎとチップ１０２のｐ型半導体１０２Ｐは直接接続されている。同様に、チップ群１００Ｂにおいてチップ１０３のｎ型半導体１０３Ｎとチップ１０４のｐ型半導体１０４Ｐは直接接続されている。２組のチップ群１００Ａ、１００Ｂは電気的に並列に接続されている。第１のアノード側電極板２０はチップ群１００Ａのチップ１０１のｐ型半導体１０１Ｐとチップ群１００Ｂのチップ１０３のｐ型半導体１０３Ｐに接続されている。第１のカソード側電極板３０はチップ群１００Ａのチップ１０２のｎ型半導体１０２Ｎ、及びチップ群１００Ｂのチップ１０４のｎ型半導体１０４Ｎに接続されている。複数のボンディングワイヤ９０、９１は図１の実施形態と同様の構成により放射状に配置されている。   In the chip group 100A, the n-type semiconductor 101N of the chip 101 and the p-type semiconductor 102P of the chip 102 are directly connected. Similarly, in the chip group 100B, the n-type semiconductor 103N of the chip 103 and the p-type semiconductor 104P of the chip 104 are directly connected. The two sets of chip groups 100A and 100B are electrically connected in parallel. The first anode electrode plate 20 is connected to the p-type semiconductor 101P of the chip 101 of the chip group 100A and the p-type semiconductor 103P of the chip 103 of the chip group 100B. The first cathode side electrode plate 30 is connected to the n-type semiconductor 102N of the chip 102 of the chip group 100A and the n-type semiconductor 104N of the chip 104 of the chip group 100B. The plurality of bonding wires 90 and 91 are arranged radially with the same configuration as in the embodiment of FIG.

以上のように、第１及び第２実施形態によれば、ＬＥＤ１、１００において径の細い複数のボンディングワイヤを放射線状に配設している。従って、このＬＥＤ１、１００を照明装置に用いた場合、被観察体にボンディングワイヤ９０、９１の影の像が投影されたとしても、照射輝度のむらを低減することができる。   As described above, according to the first and second embodiments, the plurality of bonding wires having a small diameter are arranged radially in the LEDs 1 and 100. Therefore, when the LEDs 1 and 100 are used in an illumination device, even if the shadow image of the bonding wires 90 and 91 is projected on the object to be observed, the unevenness in irradiation luminance can be reduced.

また、複数のボンディングワイヤ９０、９１を用いているため、ＬＥＤ１、１００の駆動時に一部のボンディングワイヤの接合点が剥離しても、照明光の供給に支障が生じることがない。   Further, since a plurality of bonding wires 90 and 91 are used, even if the bonding points of some of the bonding wires are peeled off when the LEDs 1 and 100 are driven, the illumination light supply is not hindered.

本発明に係る第１実施形態が適用されるＬＥＤの平面図である。It is a top view of LED to which 1st Embodiment concerning this invention is applied. 図１のＬＥＤの層構造を模式的に示す図である。It is a figure which shows typically the layer structure of LED of FIG. 本発明に係る第２実施形態が適用されるＬＥＤの平面図である。It is a top view of LED with which 2nd Embodiment concerning this invention is applied.

符号の説明Explanation of symbols

１、１００ ＬＥＤ
１０ チップ
２０ 第１のアノード側電極板
３０ 第１のカソード側電極板
５０ 第２のアノード側電極板
７０ 第２のカソード側電極板
８０ リフレクタ
９０、９１ ボンディングワイヤ

1,100 LED
10 Chip 20 First Anode Side Electrode Plate 30 First Cathode Side Electrode Plate 50 Second Anode Side Electrode Plate 70 Second Cathode Side Electrode Plate 80 Reflector 90, 91 Bonding Wire

Claims (3)

発光体のｐ型半導体と第１の電極リードとを電気的に接続するためのボンディングワイヤと前記発光体のｎ型半導体と第２の電極リードとを電気的に接続するためのボンディングワイヤがそれぞれ複数設けられ、
これら複数のボンディングワイヤの接合点が均一に分散されていることを特徴とする半導体発光素子。 A bonding wire for electrically connecting the p-type semiconductor of the light emitter and the first electrode lead, and a bonding wire for electrically connecting the n-type semiconductor of the light emitter and the second electrode lead, respectively; There are several,
A semiconductor light emitting element characterized in that junction points of the plurality of bonding wires are uniformly dispersed. 前記複数のボンディングワイヤは、前記発光体の中心部を中心として放射状に配置されることを特徴とする請求項１に記載の半導体発光素子。   The semiconductor light emitting device according to claim 1, wherein the plurality of bonding wires are arranged radially with a central portion of the light emitter as a center. 前記ｐ型半導体は第１の電極板に接続され、前記第１の電極リードは第２の電極板に接続され、
前記ｎ型半導体は第３の電極板に接続され、前記第２の電極リードは第４の電極板に接続され、
前記第１の電極板と前記第２の電極板、及び前記第３の電極板と前記第４の電極板が、それぞれ前記複数のボンディングワイヤで接続されることを特徴とする請求項１または２のいずれかに記載の半導体発光素子。

The p-type semiconductor is connected to a first electrode plate, the first electrode lead is connected to a second electrode plate,
The n-type semiconductor is connected to a third electrode plate, the second electrode lead is connected to a fourth electrode plate,
The first electrode plate and the second electrode plate, and the third electrode plate and the fourth electrode plate are respectively connected by the plurality of bonding wires. The semiconductor light-emitting device according to any one of the above.

JP2004046070A 2004-02-23 2004-02-23 Semiconductor light emitting device Pending JP2005236182A (en)

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
KR101419870B1 (en) * 2013-06-24 2014-07-16 비비에스에이 리미티드 Iii-nitride semiconductor light emitting device
KR20140092081A (en) * 2013-01-15 2014-07-23 엘지이노텍 주식회사 Light emitting device package
JP2016524322A (en) * 2013-05-08 2016-08-12 エルジー イノテック カンパニー リミテッド Light emitting element

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