JP2005256119A5 - - Google Patents

Description

Deposition equipment

  The present invention relates to a film forming apparatus.

  Conventionally, vacuum deposition devices and ion-assisted deposition devices are mainly used as film forming devices for optical thin films. In recent years, attempts have been made to use an ion plating apparatus or a sputtering apparatus for the purpose of forming an optical thin film, and an optical thin film having desired optical characteristics, denseness, and adhesion can be obtained. Development of membrane devices is desired.

  For example, as a film forming apparatus using a sputtering method, a film forming apparatus as shown in FIG. 1 is disclosed (see, for example, Patent Document 1 and Non-Patent Document 1).

  FIG. 1 is a schematic view of a film forming apparatus using a conventional sputtering method. The film forming apparatus is a vacuum chamber 10 evacuated inside by an exhaust system (not shown), and a cylindrical shape provided in the vacuum chamber 10. Substrate holder 20, and first target 30, second target 35, and oxidation source 40 that are provided inside vacuum chamber 10 and are partitioned by a shielding plate. The first target 30 and the second target 35 are respectively made of different metal materials.

  Next, a conventional film forming method using the film forming apparatus will be described. A plurality of substrates 50 are held on the outer periphery of the substrate holder 20. Next, the substrate holder 20 is rotated so that the substrate 50 held on the outer periphery of the substrate holder 20 and the first target 30 face each other. Then, by sputtering the first target 30, atoms of the metal material constituting the first target 30 are stacked on the substrate 50, and a thin film made of the metal material of the first target 30 is formed on the substrate 50. To do. Further, the substrate holder 20 is rotated so that the substrate 50 on which the thin film made of the metal material of the first target 30 is formed is opposed to the oxidation source 40. Then, a plasma of an oxidizing gas such as oxygen or ozone is generated by the oxidation source 40, and oxygen radicals in the plasma are reacted with the thin film formed on the substrate 50, so that the metal thin film formed on the substrate 50 is formed. Oxidize. As a result, a metal oxide thin film obtained by oxidizing the metal of the first target 30 on the substrate 50 can be obtained. Next, the substrate holder 20 is rotated so that the substrate 50 on which the metal oxide thin film is formed and the second target 35 face each other. Then, by sputtering the second target 35, the atoms of the metal material constituting the second target 35 are stacked on the metal oxide thin film, and the thin film made of the metal material of the second target 35 is metal-oxidized. It is formed on a thin film. Next, the substrate holder 20 is rotated, the substrate 50 on which the thin film made of the metal material of the second target 35 is formed is opposed to the oxidation source 40, and the second target is generated by oxygen radicals supplied from the oxidation source 40. A thin film made of 35 metal materials is oxidized. By repeating these steps, a metal oxide thin film obtained by oxidizing the metal material of the first target 30 and a metal oxide thin film obtained by oxidizing the metal material of the second target 35 are formed on the substrate 50. can do. Note that a thin film made of a metal material of the first target 30 and / or the second target 35 may be formed without operating the oxidation source 40.

  According to the conventional film forming apparatus as described above, a thin film of metal or metal oxide can be formed on a substrate having a flat surface without unevenness, but like a fine groove or hole formed by fine processing. It is difficult to form a desired thin film on a substrate having a rough surface on its surface. FIG. 2 is a cross-sectional view of an element in which a thin film is formed on a substrate having a concavo-convex shape on the surface using a conventional film forming apparatus. That is, as shown in FIG. 2, when a film 110 made of a target material is formed by sputtering on a quartz substrate 50 having a fine uneven surface on the surface using the conventional film forming apparatus described above. The target material selectively adheres to the convex portions of the substrate 50. For this reason, the target material film 110 is deposited on the convex portion of the substrate 50, but in the concave portion of the substrate 50, the target material film adheres less, and the film deposited on the convex portion of the substrate 50. 110 gradually narrows the opening of the recess and prevents the target material from adhering to the recess of the substrate 50. As a result, the concave portion on the surface of the substrate 50 is not filled with the target material, and the cavity 120 is formed in the concave portion of the substrate. Such an element in which the cavity 120 is formed in the concave portion of the substrate 50 becomes a defective product as an optical element. Therefore, it is difficult to uniformly and uniformly fill the fine grooves and holes provided in the substrate 50 with the conventional film forming apparatus as described above.

  In addition, a semiconductor manufacturing apparatus has been devised that can fill thin grooves and holes in a Si substrate with fine grooves and holes on the surface with a thin film material. However, it is difficult to fill a thin film material into fine grooves and holes formed on the surface of a highly insulating substrate such as glass. Further, the film thickness error and the film thickness distribution in the plane of the substrate, which are not problematic in the semiconductor thin film, can be a serious problem in the optical thin film. In particular, in a dichroic filter for color synthesis and color separation, a polarization separation film, a narrow band wavelength separation film, and a multilayer antireflection film, film thickness errors and film thickness distribution are fatal problems. In the semiconductor manufacturing apparatus as described above, it is difficult to achieve a desired optical film thickness (product of refractive index and physical film thickness) required for an optical thin film on a substrate having a surface with fine irregularities. It is. Furthermore, in order to obtain arbitrary optical characteristics, the physical film thickness of the optical thin film is controlled, and an optical thin film having a desired optical film thickness is multilayered on a substrate having a fine uneven shape on the surface with good reproducibility. It is very difficult to laminate. That is, when a multilayer optical thin film is laminated on a substrate having a fine uneven shape on the surface using a conventional semiconductor manufacturing apparatus, the optical thin film formed and laminated on the substrate has a fine unevenness on the surface of the substrate. Does not reflect the shape of. And as the physical film thickness of the optical thin film formed on the substrate is larger, and as the number of optical thin films to be laminated on the substrate is larger, the shape of the thin film formed or laminated on the substrate becomes closer to flat, It is difficult to form or laminate a thin film having a physical film thickness on a substrate. Therefore, since it is difficult to form or laminate a thin film having a desired optical film thickness on a substrate, it becomes difficult to obtain an optical element having a desired refractive index.

Therefore, it is possible to fill the target material into fine grooves and holes provided on the surface of the substrate by microfabrication, and the substrate having a fine uneven shape has a desired optical film thickness (multilayer). A film forming apparatus for an optical thin film capable of forming a thin film is desired.
Japanese Patent No. 3202974 O plus E Vol. 26, no. 2, February 2004, p. 144-148

  An object of this invention is to provide the film-forming apparatus which can control the thickness of the film | membrane deposited on the board | substrate which has an uneven | corrugated shape on the surface.

In one aspect of the present invention, at least one target is sputtered to form a thin film of the target material on the substrate, and active species of a gas that reacts with the thin film is reacted with the thin film to form a film on the substrate. The film forming apparatus is characterized in that it has at least one etching source for etching the thin film and further has a plurality of reaction sources for supplying active species of gas that reacts with the thin film. .

  ADVANTAGE OF THE INVENTION According to this invention, the film-forming apparatus which can control the thickness of the film | membrane deposited on the board | substrate which has an uneven | corrugated shape on the surface can be provided.

  Next, embodiments of the present invention will be described with reference to the drawings.

  First, an outline of a film forming apparatus according to the present invention will be described with reference to FIG. FIG. 3 is a schematic view of a film forming apparatus according to the present invention. As shown in FIG. 3, the film forming apparatus according to the present invention is a film forming apparatus that forms a thin film of a target material on a substrate by sputtering a target, and is provided in the vacuum chamber 10 and the vacuum chamber 10. The cylindrical substrate holder 20, the etching source 60, the flight direction limiting means 70, and the first target 30, the second target 35, and the reaction source 40 that are provided inside the vacuum chamber 10 and partitioned by a shielding plate, respectively. Have The inside of the vacuum chamber 10 is exhausted by an exhaust system (not shown) and is kept in a high vacuum state. The cylindrical substrate holder 20 can be rotated at a predetermined rotation speed, and one or a plurality of substrates 50 can be held on the outer periphery of the substrate holder 20.

  Next, the operation of the film forming apparatus according to the present invention will be described. First, one or more substrates 50 are held on the outer periphery of the substrate holder 20. Next, the substrate holder 20 holding the substrate 50 is rotated so that the substrate 50 and the first target 30 face each other. Then, by sputtering the first target 30, atoms of the material constituting the first target 30 are deposited on the substrate 50, and a thin film made of the material of the first target 30 is formed on the substrate 50. Next, the substrate holder 20 is rotated so that the substrate 50 on which the thin film made of the material of the first target 30 is formed and the etching source 60 face each other. Then, a part of the thin film made of the material of the first target 30 formed on the substrate 50 is etched by the high energy particles emitted from the etching source, as will be described later. Next, if necessary, the substrate holder 20 is rotated so that the reaction source 40 faces the substrate 50 on which the thin film made of the material of the etched first target 30 is formed. Then, the active species of the gas released from the reaction source 40 is reacted with the thin film made of the material of the etched first target 30 on the substrate 50. Thereby, a thin film of a product obtained by the reaction between the material of the first target 30 and the active species of gas can be formed on the substrate 50. Next, if necessary, the substrate holder 20 is rotated so that the substrate 50 on which the thin film is formed and the second target 35 are opposed to each other. Then, by sputtering the second target 35, atoms of the material constituting the second target 35 are deposited on the thin film formed on the substrate 50, and a thin film made of the material of the second target 35 is deposited on the substrate 50. Laminate on the thin film formed above. Also in this case, the substrate holder 20 is rotated next so that the substrate 50 on which the thin film made of the material of the second target 35 is formed and the etching source 60 are opposed to each other. Then, a part of the thin film made of the material of the second target 35 formed on the substrate 50 is etched by the high energy particles emitted from the etching source, as will be described later. In this manner, the film formation by sputtering of the target, the etching of the thin film formed by the etching source, and the reaction of the thin film formed by the reaction source as necessary were combined with the substrate holder 20. A thin film made of the material of the first target 30 and / or the second target 35 and / or a thin film made of the material of the first target 30 and / or the second target 35 on one or more substrates 50 A thin film of a product obtained by reacting with an active species of gas supplied from a reaction source can be formed or laminated. In addition, each process regarding the film formation by sputtering of the target, the etching of the thin film formed by the etching source, and the reaction of the thin film formed by the reaction source can be repeatedly or continuously performed as necessary. .

  The material of the substrate is not particularly limited, and the material of the substrate may be not only a conductive material such as metal but also an insulating material such as glass including quartz glass and plastic. Further, a fine uneven structure (including grooves and holes) may be formed on the surface of the substrate on which the thin film is formed, or even if the surface of the substrate on which the thin film is formed is a flat plate Good.

  As described above, the film forming apparatus according to the present invention has an etching source for etching a thin film formed or stacked on a substrate. In the film forming apparatus according to the present invention, the number of etching sources may be singular or plural. The etching source emits high energy particles that etch a thin film of target material formed or stacked on the substrate. By providing an etching source in the film formation apparatus according to the present invention, the thickness of a film deposited on a substrate having an uneven surface can be controlled. More specifically, the target material can be sufficiently filled in fine grooves and holes provided in the substrate. In addition, a film having a desired thickness can be formed on a substrate having an uneven surface. That is, a uniform and uniform film reflecting the shape of the surface of the substrate can be formed. Thus, a thin film having a desired refractive index can be formed on the substrate. In addition, by manufacturing an optical element having an optical thin film using the film forming apparatus according to the present invention, an optical element having optical characteristics such as a desired optical film thickness can be obtained with high accuracy.

  Next, the function of the etching source in the film forming apparatus according to the present invention will be described with reference to FIGS.

  FIG. 4 is a cross-sectional view of an element in which a thin film is formed on a substrate having an uneven surface by using the film forming apparatus according to the present invention. In the case where a thin film made of a target material is formed on a substrate 50 having irregularities such as grooves and / or holes on the surface as shown in FIG. There is a tendency to adhere selectively to the center. As a result, when the etching source in the present invention is not used, adhesion of a film made of the target material increases in the vicinity of the convex portion of the substrate 50, and the target material is formed on the bottom or corner of the concave portion of the substrate 50. The adhesion of the film made of is reduced. Further, the film formed in the vicinity of the convex portion of the substrate 50 prevents the particles of the target material from entering the bottom or corners of the concave portion of the substrate 50. For this reason, when a thin film made of the target material is formed on the surface of the substrate 50, as shown in FIG. 2, the concave portion of the substrate 50 is not filled with the target material, and a cavity is formed.

  Here, when a thin film made of a target material is formed on the substrate 50 having a concavo-convex shape on the surface, the film deposited on the substrate 50 is irradiated with high energy particles from an etching source. The high energy particles irradiated from the etching source tend to be removed by selectively etching around the film deposited on the corner of the convex portion of the substrate 50. That is, deposition of a film made of the target material around the corner of the convex portion of the substrate 50 can be suppressed. Further, the deposition of the film made of the target material around the corner of the convex portion of the substrate 50 is suppressed, so that the film formed in the vicinity of the convex portion of the substrate 50 is prevented from covering the concave portion of the substrate 50. To do. Then, before the film made of the target material that grows around the corner of the convex portion of the substrate 50 covers the concave portion of the substrate 50, the concave portion of the substrate 50 can be filled with the target material. On the other hand, when the high energy particles irradiated from the etching source enter the recess, they tend to collide with each other, and the probability of etching and removing the film formed in the recess decreases. For this reason, in the concave portion of the substrate 50, the film of the target material adhering to the concave portion of the substrate 50 is not much removed by the high energy particles, and deposition of the film made of the target material proceeds. As a result, by adjusting the frequency of the film formation by the target particles emitted from the target and the etching by the high energy particles irradiated from the etching source, as shown in FIG. The recess can be filled with the target material, and a thin film made of the target material can be formed on the surface of the substrate 50.

  In the above etching process, for example, as shown below, an ion beam source is used as an etching source, Ar gas plasma ions are used as high energy particles, and power of the ion beam source is supplied to the ion beam source. This can be achieved by adjusting the Ar gas pressure and the Ar gas plasma ion irradiation time. The element in which the concave portion provided on the surface of the substrate 50 as shown in FIG. 4 is filled with the target material having a high refractive index and the thin film made of the target material is formed on the surface of the substrate 50 is formed in a later step. The thin film formed on the surface of the substrate 50 is removed, and the portion of the high refractive index material filled in the concave portion of the substrate 50 can be used as the optical waveguide. That is, an element in which an optical waveguide is provided on a substrate can be manufactured from the element as shown in FIG.

  FIG. 5 is a cross-sectional view of an element in which a multilayer optical thin film is laminated on a substrate having a fine uneven shape on the surface using the film forming apparatus according to the present invention. In the case where a multilayer thin film made of a plurality of target materials is formed on a substrate 50 having an irregular shape such as a groove having a V-shaped cross section on the surface as shown in FIG. Tends to adhere selectively around the apex of the convex portion. As a result, when the etching source according to the present invention is not used, the film made of the target material increases in the vicinity of the convex portion of the substrate 50, and the film made of the target material in the vicinity of the concave portion of the substrate 50. Less adherence. For this reason, when a thin film made of the target material is formed on the surface of the substrate 50, the thickness of the thin film made of the target material is large in the vicinity of the convex portion of the substrate 50, and the target material is made in the vicinity of the concave portion of the substrate 50. The film thickness of the thin film becomes small, and the film thickness of the thin film formed or laminated on the substrate does not reflect the uneven shape of the substrate.

  Here, when a thin film made of a target material is formed on the substrate 50 having a concavo-convex shape on the surface, the film deposited on the substrate 50 is irradiated with high energy particles from an etching source. The high energy particles irradiated from the etching source tend to be selectively removed by etching mainly on the film deposited on the apex of the convex portion of the substrate 50. That is, deposition of a film made of the target material around the vertex of the convex portion of the substrate 50 can be suppressed. On the other hand, the high energy particles irradiated from the etching source have a low probability of etching and removing the film formed in the recess. For this reason, in the concave portion of the substrate 50, the film of the target material adhering to the concave portion of the substrate 50 is not much removed by the high energy particles, and deposition of the film made of the target material proceeds. As a result, by adjusting the frequency of the film formation by the target particles emitted from the target and the etching by the high energy particles irradiated from the etching source, it was provided on the surface of the substrate 50 as shown in FIG. A thin film made of a target material reflecting the shape of the unevenness can be formed. Next, by changing the target material and performing film formation with target particles emitted from the target and etching with high energy particles irradiated from the etching source, the shape of the unevenness provided on the surface of the substrate 50 is changed. A thin film made of the material of another target reflected can be laminated. In this manner, a multilayer thin film made of the same or different target material reflecting the shape of the unevenness provided on the substrate can be laminated on the substrate 50. Note that a thin film having a desired shape different from the shape of the substrate (for example, a V shape or a flat shape having a different inclination angle) is deposited on the substrate by appropriately changing the conditions for etching the thin film by the etching source. You can also.

  In the above etching process, for example, as shown below, an ion beam source is used as an etching source, Ar gas plasma ions are used as high energy particles, and power of the ion beam source is supplied to the ion beam source. This can be achieved by adjusting the Ar gas pressure and the Ar gas plasma ion irradiation time.

  As shown in FIG. 4, an optical element having a transmission characteristic of arbitrary polarized light can be provided by laminating a multilayer thin film reflecting the shape of the unevenness of the substrate on a substrate having an unevenness on the surface. For example, it is possible to design an optical element in which the transmittance of one polarized light is significantly different from the transmittance of the other polarized light perpendicular to the polarized light in a wide specific wavelength range. That is, it is possible to provide an optical element that transmits one polarized light in a wide specific wavelength range but does not transmit the other polarized light perpendicular to the polarized light, and an optical element that splits and extracts one of the polarized lights from the light. . FIG. 5 is a graph showing the transmission characteristics of polarized light of the optical element as shown in FIG. The transmission characteristics of polarized light as shown in FIG. 5 of the optical element as shown in FIG. 4 can be obtained by adjusting the film thickness of the thin film laminated on the substrate of the optical element in FIG. The range of transmittance and wavelength can be adjusted. For example, the wavelength range of polarized light transmitted through the optical element can be changed only for one of S-polarized light and P-polarized light.

  The etching source is preferably an ion beam source that generates a beam of plasma ions. That is, the gas supplied to the ion beam source is ionized to generate a gas plasma, and an electric field is applied to the plasma, thereby accelerating the ions of the gas present in the plasma and releasing the ion beam. Can do. The thin film can be etched by irradiating the thin film formed or laminated on the substrate with an ion beam emitted from an ion beam source as an etching source. By using an ion beam source as an etching source, a large number of plasma ions generated by the ion beam source are formed or stacked on the substrate as an ion beam substantially perpendicular to the surface of the thin film formed or stacked on the substrate. The thin film formed on or stacked on the substrate can be etched. As a result, specific portions of the thin film formed or laminated on the substrate can be selectively and efficiently etched, and the thickness of the thin film formed on the substrate having a fine uneven shape on the surface can be controlled more easily. can do. As the ion beam source, a known ion gun can be used. In the ion gun, a high DC voltage is applied between the electrodes with respect to the gas supplied to the ion gun, and the supplied gas is ionized to generate gas plasma. And the gas ion in plasma can be accelerated by the voltage between electrodes, and a gas ion can be discharge | released as an ion beam. Since the ion beam source can be used as an etching source or a reaction source, only the gas for generating plasma ions is exchanged, and there is no need to exchange the etching source and the reaction source. Function can be selected.

  The etching source may be an electron cyclotron resonance (ECR) ion source that excites the introduced gas to generate gas radicals and etches the thin film with these radicals.

  Furthermore, the etching source may be a reactive ion etching (RIE) source that etches the thin film using reactive ions that are highly chemically reactive with the thin film.

  Further, examples of plasma ions emitted from an ion beam source as an etching source include ions of gases such as a rare gas (inert gas), nitrogen, and oxygen. That is, in order to obtain ions of gases such as rare gas (inert gas), nitrogen, and oxygen, it is only necessary to supply rare gas (inert gas), nitrogen, oxygen, and the like to an ion beam source as an etching source. . The plasma ions emitted from the ion beam source as the etching source are preferably ions of rare gas (inert gas) atoms. When rare gas ions are used as plasma ions emitted from an ion beam source as an etching source, the reactivity of the rare gas is low, so there is little possibility of causing a chemical change in the thin film irradiated with plasma ions, and contamination of the thin film. Less is.

  Furthermore, the plasma ions emitted from the ion beam source as the etching source are preferably plasma ions having a high sputtering yield (the number of atoms of the film that can be scattered by one plasma ion). When plasma ions having a high sputtering yield are used as plasma ions emitted from an ion beam source as an etching source, a large number of thin film atoms can be scattered by one plasma ion, so that the sputtering efficiency by plasma ions is improved. Can be improved.

  In addition, the rare gas atom ions emitted from the ion beam source as the etching source are desirably argon atom ions. Argon ions (Ar ions) are rare gas ions, have a relatively high sputtering yield, and are low in cost.

Next, the film forming apparatus of the present invention is not essential, but preferably has a reaction source that supplies active species of gas that reacts with a thin film formed on or stacked on a substrate. By providing a reaction source in the film forming apparatus, a thin film made of the target material reacts with an active species of gas supplied from the reaction source, and a thin film made of the target material and an active species of gas supplied from the reaction source. And a compound thin film can be formed. As a reaction source, an active species of the supplied oxygen gas is generated, an oxidation source that oxidizes the thin film by the active species of the oxygen gas, and an active species of the supplied nitrogen gas is generated, and the thin film is generated by the active species of the nitrogen gas. And a nitriding source for nitriding. Here, the active species of gas include an excited state of gas molecules, gas atoms (radicals) from which gas molecules are dissociated, and gas atoms or molecular (positive) ions generated by gas ionization. For example, when the target material is a metal such as Si and Ta and the gas supplied to the reaction source is oxygen, oxygen radicals or oxygen in which the metal such as Si and Ta is an active species of oxygen Reacting with ions, a thin film of metal oxide such as SiO ₂ and Ta ₂ O ₅ is formed. It is formed by the reaction between the target material thin film and the gas active species by adjusting the ratio of the amount of target material and the amount of gas supplied to the reaction source, and hence the amount of active species of gas. It is possible to control the chemical species of the thin film. Thereby, the refractive index of the thin film formed by the reaction between the thin film made of the target material and the active species of the gas can be controlled. The refractive index of the thin film formed by the reaction between the target material thin film and the active species of the gas changes linearly with respect to the ratio between the amount of the target material and the amount of gas supplied to the reaction source. To do. For example, when a metal Si thin film is oxidized with oxygen radicals, by adjusting the composition ratio of Si and O, the ratio of Si to SiO ₂ in the thin film varies, and the refractive index of the thin film is changed to the refractive index of Si. It can be linearly controlled with respect to the composition ratio of Si and O between 3.97 and the refractive index of SiO ₂ of 1.45. When the metal Ta thin film is oxidized with oxygen radicals, the ratio of Ta to Ta ₂ O ₅ in the thin film varies by adjusting the composition ratio of Ta and O, and the refractive index of the thin film It can be controlled linearly with respect to the composition ratio of Si and O between a refractive index of 2.12 and a refractive index of Ta ₂ O ₅ of 2.05. The above refractive indexes are all refractive indexes with respect to light having a wavelength of 587.56 nm. In addition, thin films having various refractive indexes can be formed by laminating thin films such as Si, SiO ₂ , Ta, and Ta ₂ O ₅ .

  As the reaction source, known high frequency electromagnetic induction, inductively coupled plasma (ICP), electron cyclotron resonance, high frequency discharge, or direct current discharge is used to excite or ionize (plasma) the gas supplied to the reaction source. It is done.

  Further, the number of reaction sources provided in the film forming apparatus may be one or more, but is preferably plural. In general, the reaction between the thin film formed or laminated on the substrate and the active species of the gas supplied from the reaction source is a rate-determining step in all the steps of film formation. Therefore, when the number of reaction sources is singular, it is formed or laminated on the substrate for one step of depositing a thin film made of the target material on the thin film formed or laminated on the substrate or the substrate from the target. In some cases, the process of reacting the thin film with the active species of the gas supplied from the reaction source is required a plurality of times, that is, the substrate holder needs to be rotated a plurality of times. On the other hand, when the number of reaction sources provided in the film forming apparatus is plural, the active species of the gas supplied from the plural reaction sources for one step of depositing a thin film made of the target material. In one step of the reaction, a sufficient reaction between the thin film formed or laminated on the substrate and the active species of the gas supplied from the reaction source can be realized. That is, both the step of depositing the target material and the step of sufficient reaction between the target material and the active species of the gas can be realized while the substrate holder is rotated once.

  Furthermore, at least one of the reaction sources is preferably an ion beam source that generates a beam of plasma ions. By using an ion beam source as a reaction source, a large number of plasma ions generated by the ion beam source are formed or stacked on the substrate as an ion beam substantially perpendicular to the surface of the thin film formed or stacked on the substrate. The thin film formed or laminated on the substrate can be uniformly and uniformly reacted with the plasma ions generated from the reaction source, and the thin film formed on or laminated on the substrate and the reaction source. A thin film of a product obtained by reaction with generated plasma ions can be formed uniformly and uniformly. In this case, when the etching source is also an ion beam source, a plurality of ion beam sources are provided in the film forming apparatus, at least one of the ion beam sources is an etching source, and the other ion beam sources are reaction sources. It is. As described above, when a part of a plurality of ion beam sources is used as a reaction source, the ion beam source used as a reaction source is etched by changing the gas supplied to the ion beam source as necessary. Can be used as a source.

  Further, when the etching source is an ion beam source and / or when the reaction source is an ion beam source, the film forming apparatus according to the present invention is not essential, but preferably plasma ions fly. It further has a means to restrict | limit the direction to do. Means for limiting the direction of flight of plasma ions emitted from the ion beam source is provided between the ion beam source and the substrate. By providing the film deposition system with a means to limit the direction in which the plasma ions fly, plasma ions emitted from the ion beam source can be selected from plasma ions having a large velocity component that travels straight from the ion beam source toward the substrate. Can be made to collide with the substrate or the thin film. As a result, plasma ions can collide with the substrate or thin film in a substantially vertical direction, so when an ion beam source is used as an etching source, a specific portion of the target material formed or laminated on the substrate or thin film is selected. Therefore, the thickness of the thin film of the target material can be easily controlled. Further, even when an ion beam source is used as a reaction source, the target material formed or laminated on the substrate or thin film can be reacted efficiently, that is, uniformly and uniformly with the active species of the gas. It is possible to easily form the thin film, the active species of the gas, and the thin film of the product. The means for restricting the direction in which plasma ions fly may be, for example, a flight direction restricting means as shown in FIGS.

  Further, when the etching source is an ion beam source and / or when the reaction source is an ion beam source, the distance between the ion beam source and the substrate is preferably an average of plasma ions. It is 1 to 10 times the free process. Specifically, the distance between the ion beam source and the substrate is preferably 10 mm or more and 500 mm or less. When the distance between the ion beam source and the substrate is less than 1 time of the mean free path of plasma ions or less than 10 mm, the velocity component substantially perpendicular to the thin film formed or laminated on the substrate This reduces the number of plasma ions having, and makes it relatively difficult to control the etching of the thin film or the reaction between the thin film and the plasma ions. On the other hand, when the distance between the ion beam source and the substrate exceeds 10 times the mean free path of plasma ions, or exceeds 500 mm, the number of plasma ions impinging on the thin film decreases, and etching of the thin film or The efficiency of the reaction between the thin film and plasma ions is reduced. As described above, when the distance between the ion beam source and the substrate is longer than that in the conventional sputtering method, the velocity of the plasma ions emitted from the ion beam source is substantially perpendicular to the thin film formed or stacked on the substrate. A plasma ion having a component is collided with a thin film formed or laminated on a substrate, and the thin film formed or laminated on the substrate is etched, or the thin film formed or laminated on the substrate reacts with plasma ions generated from a reaction source. Can be made. As a result, specific portions of the thin film formed or laminated on the substrate can be selectively and efficiently etched, and the thickness of the thin film formed on the substrate having a fine uneven shape on the surface can be controlled more easily. can do. In addition, the thin film formed or laminated on the substrate can be uniformly and uniformly reacted with plasma ions generated from the reaction source, and the thin film formed or laminated on the substrate reacts with the plasma ions generated from the reaction source. The thin film of the product obtained in this way can be formed uniformly and uniformly.

  The target material is deposited on the substrate or a thin film formed or laminated on the substrate by a known sputtering method. The target material is not particularly limited, and examples of the target material include metals and metal compounds.

In the film forming apparatus of the present invention, the target material is preferably Al, Si, Ti, Cr, Nb, Ta, SiO ₂ , Al ₂ O ₃ , TiO ₂ , Cr ₂ O ₃ , Nb ₂ O ₅ , and One or more types of materials selected from the group consisting of Ta ₂ O ₅ . By using such a target material, a thin film that cannot be formed by a conventional film formation apparatus can be formed as a substrate or a thin film formed or stacked over the substrate. In particular, in the film forming apparatus according to the present invention, a thin film containing Al, Cr, Al ₂ O ₃ , and Cr ₂ O ₃ can be formed.

Further, the number of targets may be singular or plural. When there are a plurality of targets, simultaneous sputtering with a plurality of targets can be performed.
In addition, when the number of targets is plural, the types of target materials may be one type or two or more types. However, when the number of targets is plural, at least two of the plural targets preferably include different target materials. By simultaneously sputtering a plurality of targets including different target materials, it is possible to form a thin film in which the different target materials are mixed in an arbitrary ratio. In addition, a multilayer thin film in which a plurality of thin films having different composition ratios of different target materials can be obtained by repeating simultaneous sputtering of a plurality of targets including different target materials.

Further, at least one of the targets may include a plurality of types of target materials. When a target including a plurality of types of target materials is used, a thin film including a plurality of types of target materials can be formed. As a result, a thin film containing a plurality of types of target materials is reacted with active species of gas supplied from a reaction source, and a part or all of the plurality of types of target materials are obtained by reacting with active species of gas. It is possible to obtain a thin film of the resulting product. In particular, a part of a plurality of types of target materials is likely to react with active species of gas, so that all of the plurality of types of target materials can be reacted with active species of gas, which could not be realized with a conventional deposition apparatus. Will also be possible. For example, when Al and Nb are deposited using an Al target and an Nb target and an oxidation process of these metals is performed, only Al that is easily oxidized is oxidized in the conventional film forming apparatus. Although a thin film of Al ₂ O ₃ and metal Nb has been formed, if a target containing both Al and Nb is used in the film forming apparatus of the present invention, a thin film of Al ₂ O ₃ and Nb ₂ O ₅ can be obtained. it can.

  In the film forming apparatus of the present invention, the distance between the target and the substrate is preferably 1 to 10 times the average free path of the target material particles. Specifically, the distance between the target and the substrate is preferably 10 mm or more and 500 mm or less. If the distance between the target and the substrate is less than 1 times the mean free path of the target material particles, or less than 10 mm, the velocity is approximately perpendicular to the thin film formed or laminated on the substrate. The number of particles of the target material having components is reduced, and it becomes relatively difficult to form a thin film having a desired thickness on a substrate having a fine uneven shape on the surface. On the other hand, if the distance between the target and the substrate exceeds 10 times the mean free path of the target material particles, or exceeds 500 mm, the number of target material particles impinging on the thin film decreases, The efficiency of forming a thin film made of the target material on the substrate or a thin film formed on or deposited on the substrate is reduced. As described above, when the distance between the target and the substrate is longer than that in the conventional sputtering method, the target material particles emitted from the target are substantially perpendicular to the substrate or the thin film formed or stacked on the substrate. Particles of the target material having a velocity component can be selectively and efficiently collided and deposited on a substrate or a specific portion of a thin film formed or laminated on the substrate. As a result, a thin film having a desired thickness can be more easily formed on a substrate having a fine uneven shape on the surface.

  Furthermore, in the film forming apparatus of the present invention, the etching source and the target are preferably arranged substantially concentrically. In addition, the etching source, the target, and the reaction source may be arranged on concentric circles. In particular, when both the etching source and the reaction source are ion beam sources, the distance between the etching source and the reaction source and the substrate can be set to an appropriate distance. Even if the function is replaced, the distance between the etching source or the reaction source and the substrate can be maintained at an appropriate distance.

  The film forming apparatus of the present invention is not essential, but preferably further includes means for limiting the direction in which the particles of the target material emitted from the target fly. Means for limiting the direction in which particles of the target material emitted from the target fly (hereinafter referred to as flight direction limiting means) is provided between the target and the substrate. By providing the flight direction limiting means in the film forming apparatus, target particles having a large velocity component that travels straight from the target toward the substrate are selected from the target material particles emitted and emitted from the target. Can collide with. As a result, the target particles enter the grooves or holes provided on the surface of the substrate in a substantially vertical direction, and the grooves or holes can be efficiently filled with the target material. In addition, even when a thin film is formed or laminated on a substrate having an uneven surface, the target particles can collide with the substrate or the thin film in a substantially vertical direction, so that the target formed or laminated on the substrate or the thin film. The thickness of the thin film of material can be easily controlled.

  As said flight direction restriction | limiting means, the means shown in FIG.7 and FIG.8 can be used, for example.

  FIG. 7 is a cross-sectional view of one flight direction limiting means used in the film forming apparatus according to the present invention. As shown in FIG. 7, the flight direction limiting means 70 is, for example, a plurality of flat plates having the same shape, and the plurality of flat plates constituting the flight direction limiting means 70 are arranged in parallel with each other. . The two sides along the longitudinal direction of the plurality of flat plates are parallel to the rotational axis direction of the cylindrical substrate holder 20, and the two sides along the short direction of the plurality of flat plates are surfaces from which the target is emitted from the target. It is parallel to the normal direction. Further, the flight direction limiting means 70 is provided between the first or second target 30 or 35 and the substrate 50.

  The flight direction limiting means as shown in FIG. 7 is emitted along a direction substantially perpendicular to the surface of the target among particles of the target material emitted from the target, that is, parallel to the surfaces of a plurality of flat plates. Target particles emitted along a certain direction are passed through a plurality of flat plate gaps to irradiate a substrate or a thin film formed or stacked on the substrate. On the other hand, the particles of the target material emitted along the direction of divergence from the target surface collide with the surfaces of the plurality of flat plates and are not irradiated to the substrate or the thin film formed or laminated on the substrate. In this manner, target particles having a large velocity component perpendicular to the substrate or the thin film formed or laminated on the substrate can be irradiated.

  FIG. 8 is a sectional view of another flight direction limiting means used in the film forming apparatus according to the present invention. As shown in FIG. 8, the flight direction limiting means 70 is, for example, a plurality of flat plates having the same shape, and the plurality of flat plates constituting the flight direction limiting means 70 are arranged in parallel with each other. . The normal direction in the planes of the plurality of flat plates is parallel to the rotational axis direction of the cylindrical substrate holder 20, and the two sides along the short direction of the plurality of flat plates are the method of the plane from which the target is emitted from the target. Parallel to the line direction. Further, the flight direction limiting means 70 is provided between the first or second target 30 or 35 and the substrate 50.

  The flight direction limiting means as shown in FIG. 8 is emitted along a direction substantially perpendicular to the surface of the target among particles of the target material emitted from the target, that is, parallel to the surfaces of a plurality of flat plates. Target particles emitted along a certain direction are passed through a plurality of flat plate gaps to irradiate a substrate or a thin film formed or stacked on the substrate. On the other hand, the particles of the target material emitted along the direction of divergence from the target surface collide with the surfaces of the plurality of flat plates and are not irradiated to the substrate or the thin film formed or laminated on the substrate. In this manner, target particles having a large velocity component perpendicular to the substrate or the thin film formed or laminated on the substrate can be irradiated.

  Note that a lattice-shaped flight direction limiting unit combining the flight direction limiting units shown in FIGS. 7 and 8 may be provided between the target and the substrate. Also in this case, the normal direction on the surfaces of the plurality of substrates is perpendicular to the normal direction of the surface of the target from which the target is emitted.

In the film forming apparatus as shown in FIG. 3, metal Si was used as the material for the first target, and metal Ta was used as the second target. The minimum distance between the first target and the substrate and the minimum distance between the second target and the substrate were 200 mm. In addition, a flight direction limiting mechanism is provided between the first target and the substrate and between the second target and the substrate. A rectangular ion beam source that emits an Ar ion beam was used as an etching source. Further, as a reaction source, an oxidation source by high frequency electromagnetic induction in which an antenna was arranged was used. The material of the substrate is quartz glass, and this quartz glass substrate has been finely processed in advance, and a fine groove as shown in FIG. 4 is formed, and the groove width a is 50 nm. The depth b of the film was 110 nm, and the pitch c of the unevenness was 100 nm. The substrate was held on a substrate holder, the vacuum chamber was sealed, and the inside of the vacuum chamber was evacuated to 1 × 10 ⁻⁴ Pa or less using an exhaust system. Next, the substrate holder holding the substrate was rotated at 100 rpm. The substrate holder was continuously rotated from the start of rotation of the substrate holder to the end of film formation. In addition, the rotation of the substrate holder was controlled so that the rotation speed of the substrate holder was always constant.

  First, Ar gas of 50 sccm is introduced into the etching source, and after the flow rate of Ar gas supplied to the etching source and the total pressure of Ar gas indicated by the vacuum gauge are stabilized, power of 2.5 kW is applied to the electrode of the etching source. Then, discharge of Ar gas was started. Subsequently, after introducing 100 sccm of oxygen gas into the reaction source and stabilizing the flow rate of oxygen gas supplied to the reaction source and the total pressure of the oxygen gas, a high frequency (RF wave) of 13.56 MHz with oxygen of 5 kW was supplied to the reaction source. Applying to the gas, the discharge of oxygen gas was started. This state was maintained for 3 to 5 minutes to remove impurities attached to the surface of the substrate. Here, the removal of organic impurities adhering to the surface of the substrate has a considerable effect of removing impurities by active species of Ar gas and oxygen gas, and the effect of improving the adhesion of the thin film formed on the substrate Can be increased.

Subsequently, (1) Ar gas of 200 sccm is introduced into the vacuum chamber from the vicinity of the first target, 7 kw of electric power is supplied to the first target of metal Si, and metal Si is applied to the substrate from which impurities are removed. Sputtering was performed. Thereby, a thin film of metal Si having an average thickness of 1 to 2 mm was formed on the surface of the substrate. Next, (2) Argon gas of 200 sccm is introduced into the vacuum chamber from the vicinity of the second target, and 4 kW of power is supplied to the second target of metal Ta to form a thin film of metal Si formed on the substrate. A metal Ta was sputtered on the substrate. As a result, a metal Ta thin film having an average thickness of 1 mm or less was formed on the Si thin film formed on the substrate. As a result, a mixed film of metal Si and metal Ta was formed on the substrate. Next, (3) oxygen gas plasma is generated at the reaction source, and oxygen plasma is reacted with the mixed film of metal Si and metal Ta formed on the surface of the substrate to oxidize the mixed film of metal Si and metal Ta. Then, a mixed film of SiO ₂ and Ta ₂ O ₅ was formed on the substrate. Next, (4) Ar ions emitted from an ion beam source as an etching source collide with a mixed film of SiO ₂ and Ta ₂ O _{5 formed on} the substrate to mix SiO ₂ and Ta ₂ O ₅ . Ion etching of the film was performed. Here, the etching rate of ion etching was in the range of 10% to 30% of the film formation rate for the mixed film of SiO ₂ and Ta ₂ O ₅ . Every time the substrate holder makes one rotation, the above operations (1) to (4) were repeated until the thickness of the mixed film of SiO ₂ and Ta ₂ O ₅ reached 1800 mm. The cross section of the element in which the mixed film of SiO ₂ and Ta ₂ O ₅ was formed on the substrate was observed with an electron microscope, and the film thickness of the mixed film of SiO ₂ and Ta ₂ O ₅ formed on the substrate was Even when the number increases due to the progress, the cavity as shown in FIG. 2 is not formed in the groove provided in advance in the substrate, and the material of SiO ₂ and Ta ₂ O ₅ is present in the groove provided in the substrate as shown in FIG. It was confirmed that a filled element was formed.

In the film forming apparatus as shown in FIG. 3, metal Si was used as the material for the first target, and metal Ta was used as the second target. The minimum distance between the first target and the substrate and the minimum distance between the second target and the substrate were 200 mm. In addition, a flight direction limiting mechanism is provided between the first target and the substrate and between the second target and the substrate. A rectangular ion beam source that emits an Ar ion beam was used as an etching source. As the reaction source, a rectangular ion beam source that emits an oxygen ion beam and has the same structure as the etching source was used. The material of the substrate is quartz glass, and this quartz glass substrate has been finely processed in advance, and has a fine uneven shape with a V-shaped cross section as shown in FIG. The width d between the top of the part or the bottom of the concave part was 200 nm, and the depth e from the top of the convex part to the bottom of the concave part was 100 nm. The substrate was held on a substrate holder, the vacuum chamber was sealed, and the inside of the vacuum chamber was evacuated to 1 × 10 ⁻⁴ Pa or less using an exhaust system. Next, the substrate holder holding the substrate was rotated at 100 rpm. From the start of rotation of the substrate holder to the end of film formation, the substrate holder was continuously rotated at a constant rotation speed. Further, the discharge in the ion beam source as the etching source and the reaction source was also continued from the start to the end of the film formation.

  The step of removing impurities from the substrate was performed as in Example 1.

Subsequently, (1) Ar gas of 200 sccm is introduced into the vacuum chamber from the vicinity of the first target, 7 kw of electric power is supplied to the first target of metal Si, and metal Si is applied to the substrate from which impurities are removed. Sputtering was performed. In addition, oxygen ions released from an ion beam source as a reaction source collided with metal Si deposited on the substrate. Thus, metal Si deposited on the substrate was reacted with oxygen ions to oxidize the metal Si, thereby forming a thin film of SiO ₂ on the substrate. In addition, after introducing 100 sccm of oxygen gas into the ion beam source of the reaction source and stabilizing the flow rate of oxygen gas supplied to the reaction source and the total pressure of oxygen gas indicated by the vacuum gauge, 2. 5 kw of electric power was supplied, and oxygen gas discharge was started. Further, the Ar ions emitted from the ion beam source as an etching source collide with the thin film of SiO ₂ deposited on a substrate, was subjected to ion etching of the SiO ₂ thin film. After introducing 10 sccm of Ar gas into the etching source and stabilizing the flow rate of Ar gas supplied to the etching source and the total pressure of Ar gas indicated by the vacuum gauge, power of 1.0 kW was applied to the electrode of the etching source. Then, discharge of Ar gas was started. As a result, a thin film of SiO ₂ having a thickness of 1200 mm was formed on the surface of the substrate.

Next, (2) 200 sccm of Ar gas is introduced into the vacuum chamber from the vicinity of the second target, and 5 kW of electric power is supplied to the second target of the metal Ta to remove the impurities from the metal Ta. Sputtering was performed. In addition, oxygen ions emitted from an ion beam source as a reaction source collided with metal Ta deposited on the substrate. As a result, the metal Ta deposited on the substrate was reacted with oxygen ions to oxidize the metal Ta, and a Ta ₂ O ₅ thin film was formed on the substrate. In addition, after introducing 100 sccm of oxygen gas into the ion beam source of the reaction source and stabilizing the flow rate of oxygen gas supplied to the reaction source and the total pressure of oxygen gas indicated by the vacuum gauge, 2. 5 kw of electric power was supplied, and oxygen gas discharge was started. Further, the Ar ions emitted from the ion beam source as an etching source collide with the thin film of Ta ₂ O ₅ which is formed on the substrate was subjected to ion etching of a thin film of Ta ₂ O _5. After introducing 10 sccm of Ar gas into the etching source and stabilizing the flow rate of Ar gas supplied to the etching source and the total pressure of Ar gas indicated by the vacuum gauge, power of 1.0 kW was applied to the electrode of the etching source. Then, discharge of Ar gas was started. As a result, a Ta ₂ O ₅ thin film having a thickness of 1000 mm was formed on the surface of the substrate.

The steps (1) and (2) were alternately repeated 40 times, and finally the step (1) was performed. As a result, as shown in FIG. 5, an element was obtained in which a thin film of SiO ₂ having a thickness of 1200 及 び and a thin film of Ta ₂ O _{5 having} a thickness of 1000 上 were alternately stacked on the substrate. Further, in the processes (1) and (2), the control over the film thickness of the SiO ₂ thin film and the Ta ₂ O ₅ thin film is performed by measuring the sputtering power and time for the metal Si and metal Ta measured in advance and the film thickness of the thin film. This was achieved by managing the power and time of sputtering for metal Si and metal Ta. As a result, by using the film forming apparatus according to the present invention, an SiO ₂ thin film having a thickness of 1200 mm and a Ta ₂ O ₅ thin film having a thickness of 1000 mm are alternately stacked on the substrate as shown in FIG. As a result, an element having transparent transmission characteristics was obtained. FIG. 6 is a graph showing the polarization transmission characteristics of an element in which a thin film of SiO ₂ having a thickness of 1200 mm and a thin film of Ta ₂ O _{5 having} a thickness of 1000 mm are alternately stacked on the substrate obtained in this example. It is. The polarized light transmission characteristics shown in FIG. 6 are polarized light transmission characteristics when S-polarized light or P-polarized light is incident at an incident angle of 45 degrees with respect to the normal direction of the surface of the obtained optical element. In the graph of FIG. 6, the horizontal axis represents wavelength (nm), and the vertical axis represents polarized light transmittance (%). In the graph of FIG. 6, the solid line represents the P-polarized component, and the dotted line represents the S-polarized component. As shown in FIG. 6, in the obtained element, the transmittance of S-polarized light is 90% or more and the transmittance of P-polarized light is 10% or less for wavelengths from 420 nm to 480 nm, and for wavelengths from 530 nm to 590 nm. The transmittance of P-polarized light was 90% or more and the transmittance of S-polarized light was 10% or less. That is, the obtained element has a characteristic of transmitting almost only S-polarized light for wavelengths from 420 nm to 480 nm and transmitting only about P-polarized light for wavelengths from 530 nm to 590 nm. As described above, by alternately laminating the SiO ₂ thin film and the Ta ₂ O ₅ thin film on the substrate obtained by using the film forming apparatus of the present invention, the transmittance of S-polarized light and P-polarized light in a wide wavelength range. It has been confirmed that optical elements having greatly different values can be manufactured.

  In addition, by observing the cross-section of the obtained device with an electron microscope and controlling the power of the ion beam source as an etching source and the flow rate of Ar gas supplied to the etching source, a large number of thin films are repeatedly formed on the substrate. It was confirmed that a large number of thin films reflecting the shape of the unevenness provided on the substrate can be stacked on the substrate even when stacked.

  Although the embodiments of the present invention have been specifically described above, the present invention is not limited to these embodiments, and these embodiments of the present invention depart from the spirit and scope of the present invention. And can be changed or modified.

[Appendix]
The invention described in appendix 1 is a film forming apparatus that forms a thin film of the target material on a substrate by sputtering a target, and has an etching source for etching the thin film.

The invention described in appendix 2 is the film forming apparatus described in appendix 1, wherein the etching source is high frequency electromagnetic induction plasma, inductively coupled plasma, electron cyclotron resonance plasma, helicon wave excitation plasma. Device.

The invention described in Appendix 3 is the film forming apparatus described in Appendix 1, wherein the etching source is an ion beam source that generates a beam of plasma ions.

The invention described in appendix 4 is the film forming apparatus according to appendix 3, wherein the plasma ions are ions of rare gas atoms.

The invention described in appendix 5 is the film forming apparatus according to appendix 4, wherein the rare gas atom is an argon atom.

The invention according to appendix 6 is the film forming apparatus according to any one of appendices 1 to 5, further comprising a reaction source for supplying an active species of a gas that reacts with the thin film. .

The invention described in appendix 7 is the film forming apparatus according to appendix 6, wherein the number of the reaction sources is plural.

The invention described in appendix 8 is a film forming apparatus according to appendix 6 or 7, wherein at least one of the reaction sources is an ion beam source that generates a beam of plasma ions. is there.

The invention according to appendix 9 is the film forming apparatus according to appendix 3, 4, 5 or 8, wherein the distance between the ion beam source and the substrate is one or more times greater than the mean free path of the plasma ions. The film forming apparatus is characterized in that it is less than double.

The invention according to appendix 10 is characterized in that in the film forming apparatus according to appendix 3, 4, 5 or 8, the distance between the ion beam source and the substrate is 10 mm or more and 500 mm or less. It is a membrane device.

The invention described in appendix 11 is characterized in that in the film forming apparatus according to any one of appendices 1 to 10, the film forming apparatus further includes means for limiting a direction in which particles of the target material emitted from the target fly. It is a film forming apparatus.

The invention described in appendix 12 is the film forming apparatus according to any one of appendices 1 to 11, wherein the distance between the target and the substrate is 10 times or more the average free path of the particles of the target material. The film forming apparatus is characterized in that it is less than double.

The invention described in appendix 13 is a film forming apparatus according to any one of appendices 1 to 11, wherein the distance between the target and the substrate is 10 mm or more and 500 mm or less. is there.

The invention described in appendix 14 is the film forming apparatus according to any one of appendices 1 to 13, wherein the etching source and the target are arranged substantially concentrically.

The invention according to appendix 15 is the film forming apparatus according to any one of appendices 1 to 14, wherein the target material is Al, Si, Ti, Cr, Nb, Ta, SiO ₂ , Al ₂ O ₃ TiO ₂ , Cr ₂ O ₃ , Nb ₂ O ₅ And Ta ₂ O ₅ The film forming apparatus is characterized by being one or a plurality of types of materials selected from the group consisting of:

The invention according to appendix 16 is the film forming apparatus according to any one of appendices 1 to 15, wherein the number of targets is plural, and at least two of the plural targets are made of different target materials. A film forming apparatus including the film forming device.

The invention according to appendix 17 is the film forming apparatus according to any one of appendices 1 to 16, wherein at least one of the targets includes a plurality of types of target materials. is there.

  The present invention can be applied to a film forming apparatus capable of controlling the thickness of a film deposited on a substrate having an uneven surface.

It is the schematic of the film-forming apparatus using the conventional sputtering method. It is sectional drawing of the element by which the thin film was formed into a film on the board | substrate which has an uneven | corrugated shape on the surface using the conventional film-forming apparatus. It is the schematic of the film-forming apparatus by this invention. It is sectional drawing of the element by which the thin film was formed into a film on the board | substrate which has an uneven | corrugated shape on the surface using the film-forming apparatus by this invention. It is sectional drawing of the element which laminated | stacked the multilayer optical thin film on the board | substrate which has the shape of a fine unevenness | corrugation on the surface using the film-forming apparatus by this invention. It is a graph which shows the optical characteristic of the element which laminated | stacked the multilayer optical thin film on the board | substrate which has a fine uneven | corrugated shape on the surface using the film-forming apparatus by this invention. It is sectional drawing of one flight direction limiting means used for the film-forming apparatus by this invention. It is sectional drawing of another flight direction limiting means used for the film-forming apparatus by this invention.

Explanation of symbols

10 vacuum chamber 20 substrate holder 30 first target 35 second target 40 reaction source (oxidation source)
50 substrate 60 etching source (ion gun)
70 flight direction limiting means 110 film 120 cavity 130 thin film of first material 140 thin film of second material 210 straight component of target particle 220 divergent component of target particle a width of groove or hole provided in substrate b provided on substrate Depth of groove or hole formed c Pitch of unevenness on substrate surface d Width between convex parts of element e Thickness of convex part of element

Claims (15)

In a film forming apparatus for forming a film on the substrate by sputtering at least one target, forming a thin film of the target material on the substrate, reacting an active species of a gas that reacts with the thin film with the thin film ,
And having at least one etching sources etching the thin film
A film forming apparatus , further comprising a plurality of reaction sources for supplying active species of a gas that reacts with the thin film.   2. The film forming apparatus according to claim 1, wherein the etching source is high frequency electromagnetic induction plasma, inductively coupled plasma, electron cyclotron resonance plasma, or helicon wave excitation plasma. The etch source is film-forming apparatus according to claim 1 or 2, characterized in that an ion beam source for generating a beam of plasma ions.   The film forming apparatus according to claim 3, wherein the plasma ions are ions of rare gas atoms.   The film forming apparatus according to claim 4, wherein the rare gas atom is an argon atom. It said at least one reaction source, film forming apparatus according to any one of claims 1 to 5, characterized in that an ion beam source for generating a beam of plasma ions. The distance between the ion beam source and said substrate, the deposition apparatus according to any one of claims 3 to 6, characterized in that said at most 10 times 1 times the mean free path of the plasma ions. The distance between the ion beam source and said substrate, the deposition apparatus according to any Isure of claims 3 to 7, characterized in that at 10mm or more 500mm or less. Deposition apparatus of any crab of claims 1 to 8 particles of the material of the target to be released from the target, characterized in that it further comprises means for limiting the direction of flight. The distance between the substrate and the target, the film deposition apparatus of any crab of claims 1 to 9, characterized in that not more than 10 times 1 times the mean free path of the particles of the material of said target . The distance between the substrate and the target are both crab film forming apparatus according to claim 1 to 10, characterized in that at 10mm or more 500mm or less. The etching source and the target, the film forming apparatus according to any one of claims 1 to 11, characterized in that it is arranged substantially concentrically. The target material is selected from the group consisting of Al, Si, Ti, Cr, Nb, Ta, SiO ₂ , Al ₂ O ₃ , TiO ₂ , Cr ₂ O ₃ , Nb ₂ O ₅ , and Ta ₂ O _5. film forming apparatus according to any one of claims 1 to 12, characterized in that one or more kinds of materials that. The number of the targets is plural,
It said plurality of at least two targets, the film formation apparatus according to any one of claims 1 to 13, characterized in that it comprises a material different from the target one another. At least one film forming apparatus according to any one of claims 1 to 14, characterized in that it comprises a plurality of kinds of material of the target of said target.