JP2005136658A - High-frequency switching circuit and high-frequency switch parts - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency circuit capable of effectively preventing misoperations of a receiving circuit, by suppressing the leakage signal of a transmission signal which leaks to the receiving circuit side, and to provide a compact high-frequency switching component using the high-frequency switching circuit. <P>SOLUTION: A capacitor C5 for phase conversion which generates a conversion signal, by changing the phase of a transmission signal is connected between a transmission terminal Tx and a receiving terminal Rx, and a capacitor C6 for impedance correction is connected to a strip line SL in parallel, and a conversion signal, outputted from the capacitor C5 for phase conversion, is compounded with the leakage signal of the transmission signal leaking between an antenna terminal Ant and the receiving terminal Rx. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a high-frequency switch circuit incorporated in a communication device such as a mobile phone and used for switching a signal path, and a high-frequency switch component using the same.

  Conventionally, a high-frequency switch circuit has been used to alternately switch transmission / reception of a transmission signal and a reception signal in a communication device or the like.

  FIG. 6 is an equivalent circuit diagram showing an example of a conventional high-frequency switch circuit. The high-frequency switch circuit shown in the figure includes an antenna terminal Ant, a transmission terminal Tx, and a reception terminal Rx. A first switching diode D1 is connected between the transmission terminal Tx and the antenna terminal Ant, and the reception terminal Rx. A strip line SL is connected between the antenna terminal Ant and a second switching diode D2 is connected between the end of the strip line SL on the receiving terminal Rx side and the ground potential (for example, , See Patent Document 1).

  The circuit operation when switching transmission / reception of transmission signals and reception signals using the above-described high-frequency switch circuit will be described below.

  First, when transmitting a transmission signal, the control terminal Vc applies a forward bias (the control signal from the control terminal Vc is at a high level) to the first and second switching diodes D1 and D2, and the first and second switching diodes are applied. The diodes D1 and D2 are turned on. At this time, when the first switching diode D1 is turned on, the transmission signal input via the transmission terminal Tx flows to the antenna terminal Ant. On the other hand, when the second switching diode D2 is turned on, the stripline SL is grounded via the switching diode D2, and the length of the stripline SL is set to the length of a quarter wavelength of the transmission signal. As a result, the strip line SL resonates at the communication frequency of the transmission signal. As a result, the impedance of the strip line SL becomes maximum, and acts to prevent the transmission signal from entering the reception terminal Rx.

  Further, when receiving the reception signal, the control voltage is not applied to the control terminal Vc (the control signal from the control terminal Vc is low level), and both the first and second switching diodes D1 and D2 are turned off. Accordingly, the reception signal input from the antenna terminal Ant does not flow to the transmission terminal Tx side but flows through the strip line SL to the reception terminal Rx side.

  As described above, the switching voltages D1 and D2 are controlled to be turned on / off by the control voltage from the control terminal Vc, and the resonance of the strip line SL is short-circuited to the ground potential. Transmission / reception is switched.

  Next, the structure of a conventional high-frequency switch component including the above-described high-frequency switch circuit will be described.

  FIG. 7 is a schematic perspective view of a conventional high-frequency switch component. The high-frequency switch component shown in the figure has various chip components mounted on the upper surface of a laminate 51 formed by laminating a plurality of dielectric layers via electrode pads, and an internal conductor layer is formed inside the laminate 51. Then, by connecting these via via-hole conductors or the like, the high-frequency switch circuit shown in FIG. 6 is configured. Specifically, the first and second switching diodes D1 and D2 are formed by the semiconductor chips 52 and 53, the coil L is formed by the chip inductor 54, the resistor R is formed by the chip resistor 55, and the chip capacitors 55 to 55 are formed. 57, capacitors C1 to C3 are formed.

  Incidentally, the electrode pad on which the first semiconductor chip 52 is mounted and the electrode pad on which the second semiconductor chip 53 is mounted are arranged in a sufficiently separated state. This is because the electrode pad on which the first semiconductor chip 52 is mounted and the electrode pad on which the second semiconductor chip is mounted are separated so as to suppress stray capacitance generated between the two electrode pads as much as possible. This is to prevent the electrical characteristics of the circuit from being deteriorated by stray capacitance.

On the other hand, the internal electrode layer formed inside the multilayer body 51 is composed of a capacitor electrode and a stripline conductor, and the capacitor electrode has a ground terminal electrode formed on the lower surface of the multilayer body 51 with a dielectric layer interposed therebetween. Capacitor C4 is formed by opposing arrangement. The stripline conductor is set to a length corresponding to ¼ wavelength of the transmission signal to form a stripline SL.
Japanese Unexamined Patent Publication No. Hei 6-197040

  However, in the above-described conventional high-frequency switch circuit, there is a slight resistance component in the second switching diode D2, and the impedance of the stripline SL cannot be made infinite at the time of transmission. It was impossible to completely prevent the leakage. Therefore, when the transmission signal leaks to the reception terminal Rx side and the signal level is strong, the leakage signal enters the external reception circuit via the reception terminal Rx, thereby causing malfunction of the reception circuit. Had the disadvantages.

  In addition, when the above-described conventional high-frequency switch circuit is used as a front-end module such as a mobile phone, if the leakage signal enters the reception terminal Rx side and such an unnecessary signal is converted into sound, a call is made. It also had the disadvantage of incurring quality degradation.

  Furthermore, since the conventional high-frequency switch circuit described above requires that the length of the stripline SL be ¼ of the wavelength of the transmission signal, the stripline conductor for forming the stripline SL is mounted with a large size. Therefore, the high-frequency switch component including such a high-frequency switch circuit is hindered from being downsized.

  In addition, in the conventional high-frequency switch component described above, it is necessary to dispose the electrode pad on which the first semiconductor chip 52 is mounted and the electrode pad on which the second semiconductor chip 53 is mounted in a sufficiently separated state. As a result, the mounting area of the chip component on the top surface of the laminate has increased, which has also been a factor that hinders downsizing of the high-frequency switch component.

  The present invention has been devised in view of the above-described drawbacks, and an object of the present invention is to provide a high-frequency switch circuit capable of effectively reducing a leakage signal and accurately operating a receiving circuit, and a small high-frequency switch component using the same. It is to provide.

  In the high-frequency switch circuit of the present invention, a first switch means including a first switching diode is connected between the antenna terminal connected to the antenna and the transmission terminal connected to the transmission circuit, and the antenna terminal and the reception circuit. A second switching means comprising a strip line, a second switching diode connected between a receiving terminal side end of the strip line and a ground potential, between the first receiving terminal and the first receiving terminal; In the high-frequency switch circuit for controlling transmission / reception of the second switch means and switching the connection between the antenna and the transmission circuit and the connection between the antenna and the reception circuit to alternately transmit and receive the transmission signal and the reception signal, A phase conversion capacitor for generating a converted signal by changing the phase of the transmission signal is connected between the terminal and the receiving terminal. In both cases, an impedance correction capacitor is connected in parallel to the strip line, and the converted signal output from the phase conversion capacitor is combined with a leakage signal of a transmission signal that leaks between an antenna terminal and a reception terminal. It is characterized by.

  Further, the high frequency switch circuit of the present invention outputs a converted signal in which the phase conversion capacitor changes the level of the transmission signal, and the converted signal is combined with the leaked signal, whereby the signal level of the leaked signal is It is characterized by reducing the above.

  Furthermore, the high-frequency switch circuit of the present invention is characterized in that the phase conversion capacitor is connected to a reception terminal via a second switch means.

  Furthermore, the high-frequency switch circuit of the present invention is a high-frequency switch circuit in which the phase conversion capacitor is connected to a reception terminal via a second switch means, and one end of the phase conversion capacitor is the first switching circuit. It is connected between a diode and the transmission terminal, and the other end is connected between the second switching diode and a ground potential.

  Furthermore, the high-frequency switch circuit of the present invention is characterized in that it includes a blocking means for blocking a received signal between the phase converting capacitor and the receiving terminal.

  Furthermore, the high-frequency switch component of the present invention includes a first semiconductor chip in which the high-frequency switch circuit is provided in a laminated body in which a plurality of dielectric layers are laminated, and the first switching diode is formed. A high-frequency switch component in which a second semiconductor chip on which two switching diodes are formed is mounted on an electrode pad provided on an upper surface of the multilayer body, wherein the phase conversion capacitor is the first semiconductor The impedance correction capacitor is formed by a stray capacitance generated between the cathode side electrode pad of the chip and the anode side electrode pad of the second semiconductor chip, and the anode side electrode pad of the first semiconductor chip. It is formed by a stray capacitance generated between the second semiconductor chip and the cathode side electrode pad. It is intended to.

  According to the high frequency switch circuit of the present invention, a phase conversion capacitor for generating a conversion signal in which the phase of the transmission signal and the level of the transmission signal are changed is connected between the transmission terminal and the reception terminal, Since the conversion signal output from the phase conversion capacitor is combined with the leakage signal of the transmission signal that leaks between the antenna terminal and the reception terminal on the reception terminal side of the second switch means, the leakage signal and the conversion signal By canceling each other out, it is possible to reduce the signal level of the leakage signal that enters the external receiving circuit via the receiving terminal. As a result, it is possible to effectively prevent malfunction of the receiving circuit due to the leakage signal and to operate the receiving circuit accurately.

  In addition, when the high-frequency switch circuit of the present invention is used for a front end module of a mobile phone, the signal level of the leaked signal can be reduced to such an extent that the leaked signal is hardly affected when converted into sound. It is possible to improve the call quality of the mobile phone.

  Furthermore, according to the high-frequency switch circuit of the present invention, since the impedance correction capacitor is connected in parallel with the strip line, the strip line is connected to the strip line from the antenna terminal by parallel resonance of the inductance component of the strip line and the capacitance component of the impedance correction capacitor. Impedance can be maximized when looking at. As a result, the length of the stripline can be set shorter than the length of the quarter wavelength of the input signal, and the high-frequency switch component having such a high-frequency switch circuit can be miniaturized.

  According to the high frequency switch component of the present invention, the phase conversion capacitor is caused by the stray capacitance generated between the cathode side electrode pad of the first semiconductor chip and the anode side electrode pad of the second semiconductor chip. The impedance correcting capacitor is formed by a stray capacitance generated between the anode side electrode pad of the first semiconductor chip and the cathode side electrode pad of the second semiconductor chip.

  That is, conventionally, the stray capacitance generated between the electrode pad on which the first semiconductor chip is mounted and the electrode pad on which the second semiconductor chip is mounted does not affect the electrical characteristics of the high-frequency switch circuit. However, on the contrary, the high frequency switch component of the present invention forms part of the high frequency switch circuit by utilizing the stray capacitance generated between the electrode pads. It is what you do. Therefore, it is necessary to arrange both electrode pads close to each other so that a sufficient stray capacitance can be obtained between the electrode pad on which the first semiconductor chip is mounted and the electrode pad on which the second semiconductor chip is mounted. As a result, the mounting area of the chip component mounted on the upper surface of the laminate is reduced, and the high-frequency switch component can be reduced in size.

  Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is an equivalent diagram showing an embodiment in which the high-frequency switch circuit of the present invention is applied to a high-frequency switch circuit for a GSM (Global System for Mobile Communication) communication system (transmission frequency band: 880 to 915 MHz, reception frequency band: 925 to 960 MHz). The high-frequency switch circuit shown in the figure is schematically shown as a first switch means SW1 connected between the antenna terminal Ant and the transmission terminal Tx and a first switch connected between the antenna terminal Ant and the reception terminal Rx. 2 switch means SW2 and a phase conversion capacitor C5 connected between the transmission terminal Tx and the reception terminal Rx.

  The first switch means SW1 is composed of a first switching diode D1, and its cathode is connected to the transmission terminal Tx via the capacitor C3, and its anode is connected to the antenna terminal Ant via the capacitor C1. Here, the high frequency forward resistance of the first switching diode D1 is set to 1.0Ω, the capacitances of the capacitors C1 and C3 are set to 100 pF, and the inductance of the coil L is set to 100 nH, for example.

  The switching operation of the first switch means SW1 is controlled by a control signal input via the control terminal Vc. That is, when the control signal becomes high level during transmission, the first switch means is turned on, and the antenna terminal Ant and the transmission terminal Tx are electrically connected. Further, when the control signal becomes a low level at the time of reception, the first switch means is turned off, and the antenna terminal Ant and the transmission terminal Tx are electrically disconnected.

  On the other hand, the second switch means SW2 is connected between the strip line SL connected between the receiving terminal Rx and the antenna terminal Ant, and between the end of the strip line SL on the receiving terminal Rx side and the ground potential GND. 2 switching diodes D2 and an impedance correction capacitor C6 connected in parallel to the strip line SL. The cathode of the second switching diode D2 is connected to the receiving terminal Rx via the capacitor C2, and its anode is the capacitor C4. To the ground potential GND. The high-frequency forward resistance of the second switching diode D2 is set to, for example, 1.0Ω, the capacity of the capacitor C2 is set to 100 pF, for example, and the capacity of the capacitor C4 is set to 22 pF, for example.

  The second switch means SW2 is controlled to be in a state opposite to the on / off state of the first switch means SW1 by the control signal described above. That is, when the control signal becomes high level during transmission, the second switch means is turned off, and the antenna terminal Ant and the receiving terminal Rx are electrically disconnected. Further, when the control signal becomes low level during reception, the second switch means is turned on, and the antenna terminal Ant and the reception terminal Rx are electrically connected.

  Thus, when the control signal is at a high level, the first switch means SW1 is turned on and the second switch means SW2 is turned off. When the control signal is at a low level, the first switch means SW1 is turned off, and the second switch means. SW2 is turned on.

  One terminal of the phase conversion capacitor C5 is connected between the first switching diode D1 and the transmission terminal Tx, and the other terminal is connected between the second switching diode D2 and the ground potential GND. The

  The phase conversion capacitor C5 is input with the same timing and the same strength as the transmission signal input via the transmission terminal Tx is propagated to the first switch means SW1. Capacitor C5 converts the phase of the transmission signal input to phase conversion capacitor C5 during transmission and generates a converted signal with the signal level attenuated, which is connected via second switching diode D2. The action of sending to point B is performed. Therefore, the leakage signal and the conversion signal are synthesized by setting the phase and signal level of the conversion signal so as to cancel the leakage signal of the transmission signal leaking to the receiving terminal Rx side via the second switch means SW2. Thus, the signal level of the leaked signal entering the external receiving circuit can be effectively reduced, and the malfunction of the receiving circuit due to the leaked signal can be effectively suppressed.

  Further, when this high-frequency switch circuit is used as a front-end module of a mobile phone, the signal level of the leaked signal can be reduced to such an extent that the leaked signal is hardly affected when converted into sound. It is possible to improve the call quality.

  The capacity of the phase conversion capacitor C5 is determined as follows.

  First, the signal level of the leakage signal in the high frequency switch circuit to which the phase conversion capacitor C5 is not connected is measured. Next, a phase conversion capacitor C5 is connected to the high-frequency switch circuit, and the capacitance of the phase conversion capacitor C5 is changed as a parameter while measuring the signal level of the leakage signal. Then, the capacity of the phase conversion capacitor C5 when the signal level of the leakage signal is reduced most is determined as the optimum capacity of the phase conversion capacitor C5 in the high frequency switch circuit of the present invention. The phase conversion capacitor C5 whose capacity has been determined in this way generates a conversion signal that cancels the leakage signal. For example, in the present embodiment, the first and second switching diodes D1 and D2 have a high frequency forward resistance of 1.0Ω, the capacitors C1 to C3 have a capacitance of 100 pF, the capacitor C4 has a capacitance of 22 pF, and the coil L has an inductance of At 100 nH, the optimum capacity of the capacitor C5 was determined to be 0.5 pF.

  Next, a circuit operation when the transmission / reception of the transmission signal and the reception signal is switched using the above-described high-frequency switch circuit 1 will be described.

  When transmitting a transmission signal from the transmission terminal Tx to the antenna terminal Ant, a control signal that is a forward bias voltage is supplied from the control terminal Vc to the first and second switching diodes D1 and D2, and the first and second The switching diodes D1 and D2 are turned on. When the first switching diode D1 is turned on, the transmission terminal Tx and the antenna terminal Ant are electrically connected, and the transmission signal input via the transmission terminal Tx is sent to the antenna terminal Ant side.

  At this time, the transmission signal is also input to the phase conversion capacitor, and a conversion signal is generated which displaces the phase of the transmission signal in the phase conversion capacitor and attenuates to the same level as the leakage signal. When this converted signal is sent to the connection point B on the receiving terminal side of the strip line via the second switching diode D2, it is combined with the leakage signal of the transmitting signal leaking to the receiving terminal Rx side, and both signals cancel each other. As a result, the signal level of the leaked signal entering the external receiving circuit is effectively reduced.

  Note that, as described above, the mechanism by which the leak signal is generated is that there is a slight resistance component in the second switching diode D2, and the impedance of the stripline SL cannot be made infinite during transmission.

  On the other hand, when a reception signal received at the antenna terminal Ant is sent to the reception circuit via the reception terminal Rx, a control signal (voltage) that turns off the switching diodes D1 and D2 to the first and second switching diodes D1 and D2. Is also supplied via the control terminal Vc, and the first and second switching diodes D1 and D2 are turned off. When the second switching diode is turned off, the strip line SL functions as a simple transmission line, and the impedance is corrected by the impedance correcting capacitor C6. The antenna terminal Ant and the reception terminal Rx are electrically connected, and a reception signal input via the antenna terminal Ant is sent to the reception terminal Rx side. Further, when the first switching diode D1 is turned off, the antenna terminal Ant and the transmission terminal Tx are electrically disconnected, and the reception signal does not flow to the transmission terminal Tx side. At this time, since one terminal of the phase conversion capacitor C5 is connected to the anode side of the second switching diode D2, the received signal does not leak to the transmission terminal Tx side via the phase conversion capacitor C5. .

  Thus, in the high-frequency switch circuit 1 of the present embodiment described above, the strip line SL is short-circuited to the ground potential GND while the first and second switching diodes D1 and D2 are switched on and off at high speed by an external control signal. It functions as a high-frequency switch circuit by switching between transmission and reception of a transmission signal and a reception signal using resonance at times.

  Next, a high-frequency switch component including the above-described high-frequency switch circuit will be described with reference to FIGS.

  FIG. 2 is an external perspective view of a high-frequency switch component according to an embodiment of the present invention. The high-frequency switch component shown in FIG. 2 is composed of various chip components, internal electrode layers, and the like in a laminate 1 made of a dielectric. A high frequency switch circuit is formed.

An electrode pad is formed on the upper surface of the laminate 1, and the first semiconductor chip 2 constituting the first switching diode D 1 and the semiconductor chip 3 constituting the second switching diode D 2 are formed on the electrode pad. The chip inductor 4 constituting the coil L, the chip resistor 5 constituting the resistor R, and the chip capacitors 6 to 8 constituting the capacitors C1 to C3 are mounted. (Hereinafter, the semiconductor chips 2 and 3, the chip inductor 4, the chip resistor 5, and the chip capacitors 6 to 8 are simply referred to as chip components.)
FIG. 3A shows a pattern diagram of the electrode pads on which the chip components described above are mounted. These electrode pads are formed in pairs so as to correspond one-to-one with the terminals of each chip component. That is, the first semiconductor chip 2 is mounted on the electrode pad 9, the second semiconductor chip 3 is mounted on the electrode pad 10, the chip inductor 4 is mounted on the electrode pad 11, and the chip is mounted on the electrode pad 12. A resistor 5 is mounted, and chip capacitors 6, 7, and 8 are mounted on the electrode pads 13, 14, and 15, respectively.

  The electrode pad 9 on which the first semiconductor chip 2 is mounted and the electrode pad 10 on which the second semiconductor chip 3 is mounted are arranged close to the vicinity of the center of the upper surface of the stacked body 1. Further, the cathode-side electrode pad 9a of the electrode pad 9 on which the first semiconductor chip 2 is mounted and the anode-side electrode pad 10b of the electrode pad 10 on which the second semiconductor chip 3 is mounted are arranged adjacent to each other. In addition, the anode side electrode pad 9b of the electrode pad 9 on which the first semiconductor chip 2 is mounted and the cathode side electrode pad 10a of the electrode pad 10 on which the second semiconductor chip 3 is mounted are arranged adjacent to each other. Has been.

  Thus, by arranging the electrode pads 9 and 10 on which both the semiconductor chips 2 and 3 are mounted, the cathode side electrode pad 9a of the first semiconductor chip 2 and the anode side electrode pad 10b of the second semiconductor chip 3 are arranged. Stray capacitance is generated between the first semiconductor chip 2 and the anode side electrode pad 9 b of the first semiconductor chip 2 and the cathode side 10 a of the second semiconductor chip 3. A stray capacitance is generated in the capacitor, and an impedance correcting capacitor C6 is formed by the stray capacitance.

  Therefore, conventionally, in order to minimize the stray capacitance generated between the electrode pad 9 on which the first semiconductor chip 2 is mounted and the electrode pad 10 on which the second semiconductor chip 3 is mounted, both electrode pads 9 are used. However, in the high-frequency switch component of the present invention, both electrode pads 9 and 10 are arranged close to each other and generated between the electrode pads 9 and 10. A high-frequency switch circuit is configured using stray capacitance. As a result, the distance between the electrode pads 9 and 10 can be reduced, and the high-frequency switch component can be miniaturized.

  The capacitance values of the phase conversion capacitor C5 and the impedance correction capacitor C6 can be arbitrarily set by changing the distance between the electrode pad 9 and the electrode pad 10, the size of the electrode pad, and the like.

  On the other hand, internal electrode layers 20 and 21 are formed in the laminate 1 as shown in FIG. The internal electrode layer 21 forms a strip line SL in a meandering pattern.

  Further, terminal electrodes are formed on the lower surface of the laminate 1 as shown in FIG. The terminal electrode 30 constitutes an Ant terminal, the terminal electrode 31 constitutes a Tx terminal, the terminal electrode 32 constitutes an Rx terminal, the terminal electrode 33 constitutes a ground terminal, and the terminal electrode 34 constitutes a Vc terminal. The terminal electrode 33 constituting the ground terminal is opposed to the internal electrode layer 20 via a dielectric layer, thereby forming a capacitor C4.

  And the high frequency switch circuit shown in FIG. 1 is formed by connecting the above-mentioned electrode pad, internal electrode layer, and terminal electrode through a via-hole conductor.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

  For example, in the above-described embodiment, one end of the phase conversion capacitor C5 is connected to the anode side of the second switching diode D2, so that a reception signal does not flow to the transmission terminal Tx via the capacitor C5 during reception. However, instead of this, a band pass filter BPF that passes only the frequency band of the transmission signal is connected between the reception terminal Rx and the conversion circuit, and the reception signal does not flow to the transmission terminal Tx side during reception. You may do it. As such a bandpass filter BPF, for example, as shown in the equivalent circuit diagram of FIG. 4, a filter in which two LC resonance circuits are connected in parallel is preferably used.

  In the above-described embodiment, one semiconductor chip with one switching diode is used. Instead, as shown in FIG. 5, one semiconductor chip with two switching diodes is built. It may be used. If two semiconductor chips are used in this way, the chip component mounting process can be reduced by one, so that the productivity of the high-frequency switch component can be improved.

  Furthermore, in the above-described embodiment, the high-frequency switch circuit of the present invention has been described as an example of a circuit used in a DCS communication system communication device. However, other time-division connection communication systems such as DCS (Digital Communication System) are used. It goes without saying that the present invention may be applied as a circuit used in communication equipment of a communication system or a PCS (Personal Communication System) communication system.

It is an equivalent circuit diagram of the high frequency switch circuit concerning one embodiment of the present invention. 1 is an external perspective view of a high-frequency switch component according to an embodiment of the present invention. 4A is a pattern diagram of an electrode pad, FIG. 5B is a pattern diagram of an internal electrode layer, and FIG. 5C is a pattern diagram of a terminal electrode. FIG. 5 is an equivalent circuit diagram of a high frequency switch circuit according to another embodiment of the present invention. It is an external appearance perspective view of the high frequency switch component concerning other embodiments of the present invention. It is an equivalent circuit diagram which shows an example of the conventional high frequency switch circuit. It is an external appearance perspective view of the conventional high frequency switch component.

Explanation of symbols

Tx ... transmission terminal Rx ... reception terminal Ant ... antenna terminal SW1 ... first switch means SW2 ... second switch means Vc ... control terminal D1 ... first switching diode D2 ... Second switching diode SL ... Strip line R ... Resistance L ... Coil C5 ... Phase conversion capacitor C6 ... Impedance correction capacitor 1 ... Laminate 2 ... 1st semiconductor chip 3 ... 2nd semiconductor chip 4 ... Chip inductor 5 ... Chip resistors 6-8 ... Chip capacitors 9-15 ... Electrode pads 20, 21 ... Internal electrodes Layers 30-34 ... terminal electrodes

Claims (6)

First switch means comprising a first switching diode between an antenna terminal connected to the antenna and a transmission terminal connected to the transmission circuit, between the antenna terminal and the reception terminal connected to the reception circuit, Second switch means comprising a strip line and a second switching diode connected between the end of the strip line on the receiving terminal side and the ground potential;
In a high-frequency switch circuit that controls on / off of the first and second switch means and alternately transmits and receives a transmission signal and a reception signal by switching a connection between an antenna and a transmission circuit and a connection between an antenna and a reception circuit ,
A phase conversion capacitor that generates a converted signal by changing a phase of a transmission signal is connected between the transmission terminal and the reception terminal, and an impedance correction capacitor is connected in parallel to the stripline, and the phase conversion is performed. A high-frequency switch circuit characterized in that the converted signal output from a capacitor for use is combined with a leakage signal of a transmission signal that leaks between an antenna terminal and a reception terminal. The phase conversion capacitor outputs a converted signal in which the level of a transmission signal is changed, and combines the converted signal with the leaked signal to reduce the signal level of the leaked signal. Item 4. The high-frequency switch circuit according to Item 1. 3. The high-frequency switch circuit according to claim 1, wherein the phase conversion capacitor is connected to a reception terminal via a second switch unit. 4. The phase conversion capacitor is a high-frequency switch circuit connected to a reception terminal via a second switch means;
One end of the phase conversion capacitor is connected between the first switching diode and the transmission terminal, and the other end is connected between the second switching diode and a ground potential. Item 4. The high-frequency switch circuit according to Item 3. 5. The high-frequency switch circuit according to claim 1, further comprising a blocking unit that blocks a reception signal between the phase conversion capacitor and the reception terminal. 6. A first semiconductor chip, wherein the high-frequency switch circuit according to claim 1 is provided in a laminate formed by laminating a plurality of dielectric layers, and the first switching diode is formed. And a second semiconductor chip on which a second switching diode is formed is mounted on an electrode pad provided on the upper surface of the stacked body,
The phase conversion capacitor is formed by a stray capacitance generated between the cathode side electrode pad of the first semiconductor chip and the anode side electrode pad of the second semiconductor chip, and the impedance correction capacitor is A high-frequency switch component formed by a stray capacitance generated between an anode side electrode pad of the first semiconductor chip and a cathode side electrode pad of the second semiconductor chip.

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