JP2005123582A - Substrate holding structure and substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate holding structure, which can be manufactured at a low cost and can suppress the concentration of thermal stress, and a substrate processing apparatus using it. <P>SOLUTION: In the substrate holding structure having a substrate holding base 23 on the tip of a strut, a flange 23B defined by an inner circumferential surface 23f and an outer circumferential surface 23B1 thereof is formed at the joining portion of the strut 23A and the substrate holding base 23. The inner circumferential surface 23f of the flange 23 is formed by an inclined surface whose inside diameter increasing continuously toward the lower surface of the substrate holding base 23. Further, a U-shaped groove 23U corresponding to the outer circumferential surface 23B1 of the flange 23B is formed in the lower surface of the substrate holding base 23 to which the flange 23B is joined. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate holding structure used for holding a substrate to be processed in a substrate processing apparatus, and a substrate processing apparatus using such a substrate holding structure.

  In substrate processing apparatuses such as a CVD apparatus, a plasma CVD apparatus, a heat treatment apparatus, and an etching apparatus, a substrate holding structure is provided inside a processing container in order to hold a substrate to be processed. Such a substrate holding structure includes a substrate holding table that holds a substrate to be processed and a support column that supports the substrate holding table. A heating mechanism for heating the substrate to a predetermined temperature is provided inside the substrate holding table.

  In particular, in a CVD apparatus or a heat treatment apparatus including a plasma CVD apparatus, it is necessary to heat a substrate to be processed to a temperature of 400 ° C. or higher, and in some cases 600 ° C. or higher during substrate processing. Along with such heating, a large temperature gradient is generated in the substrate holder.

  The substrate holder is generally made of ceramic having excellent corrosion resistance such as AlN. If thermal stress due to a temperature gradient is generated in the substrate holding table, the substrate holding table may be damaged.

  A configuration for solving this problem is disclosed in JP-A-2002-373737. FIG. 1 schematically shows the entire substrate holding structure described in Japanese Patent Application Laid-Open No. 2002-373737, and FIG. 2 schematically shows the vicinity of the junction between the substrate holding table and the column in the substrate structure. .

  Referring to FIG. 1, the substrate holding table 10 is held on a column 11, and a flange portion 11 </ b> A is formed at a joint portion between the column 11 and the substrate holding table 10. Referring to FIG. 2, a curved surface portion 11B is formed in a transition portion from the main body portion of the support column 11 to the flange portion 11A, and the concentration of thermal stress in this portion is reduced. Further, on the flange portion 11A side of the substrate holding base 10, a thick joint portion 10A having an outer shape that is defined by the curved surface 10B and continuously transitions toward the flange portion 11A is formed.

According to the configuration of FIGS. 1 and 2, by forming the substrate holding table 10 thinner than the thick joint 10A, the amount of heat conduction that propagates through the substrate holding table 10 is reduced. By making the side wall surface of the thick joint portion 10A into a curved surface that continuously moves toward the side wall surface of the flange portion 11A, concentration of thermal stress in the joint portion is avoided.
JP 2002-373737 A JP 2000-169268 A JP 2000-290773 A JP 2002-184844 A Japanese Patent Laid-Open No. 5-101871 Japanese Patent Laid-Open No. 7-230876

  In the substrate holding structure disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 2002-373737, it is necessary to grind almost the entire surface of the back surface of the substrate holding table 10 except for the thick joint portion 10A. However, since the substrate holder 10 is generally made of a ceramic material that is difficult to grind, such as AlN, such a large area grinding process greatly increases the cost of the substrate processing apparatus.

  On the other hand, when the substrate holder 10 is not ground in this way, thermal stress concentrates on the boundary between the flange portion 11A and the substrate holder 10 due to the temperature gradient generated in the substrate holder 10. There arises a problem that the substrate holder 10 is damaged.

  An object of the present invention is to provide a substrate holding structure that can be manufactured at low cost and can suppress concentration of thermal stress, and a substrate processing apparatus using such a substrate holding structure.

  A further object of the present invention is to suppress a temperature gradient generated in the substrate holder.

  In order to achieve the above object, the present invention provides a substrate holding structure including a column having a flange portion formed at an upper end portion and a substrate holding table joined to the flange portion, wherein the substrate holding table is A U-shaped groove extending along the outer peripheral surface of the flange portion is formed on the lower surface of the substrate holding table, including a heating mechanism, and the inner peripheral surface of the U-shaped groove and the outer periphery of the flange portion The substrate holding structure is characterized in that the surfaces are connected so as to form a continuous single surface.

  In a preferred embodiment, when viewed in cross-section, the end of the inner peripheral surface of the U-shaped groove on the flange portion side and the outer peripheral surface of the flange portion are perpendicular to each other. Located on a single line segment extending to

  In a preferred embodiment, the substrate holding structure is manufactured by individually forming the flange portion and the substrate holding table and then joining them together. The flange portion, the substrate holding table, The joint surface is located within a range corresponding to the single line segment extending in the vertical direction.

  In a preferred embodiment, the inner peripheral surface of the flange portion forms an inclined surface that is inclined so that the inner diameter of the flange portion continuously increases toward the lower surface of the substrate holder.

  In a preferred embodiment, a groove is formed in a part of a portion of the lower surface of the substrate holding table that faces the flange portion, and the flange portion of the substrate holding table is only in the outermost ring-shaped region. It is joined to the bottom surface.

  In a preferred embodiment, the heating mechanism includes an inner heating mechanism part and an outer heating mechanism part formed outside the inner heating mechanism part. The inner heating mechanism part and the outer heating mechanism part include: Driven by first and second drive power supply systems extending inside the column.

  In this case, it is preferable that the substrate holding table is provided with first and second semicircular shapes respectively connected to first and second power supply lines constituting the second drive power supply system under the heating mechanism. The first and second conductor patterns substantially cover the entire surface of the substrate holder except for a gap region formed between the first and second conductor patterns. .

  The present invention further includes a substrate holding structure including a support column having a flange portion formed at an upper end portion and a substrate holding table joined to the flange portion, the substrate holding table including a heating mechanism, The support column includes a flange portion having an inner peripheral surface and an outer peripheral surface at a joint portion with the substrate holding table, and the inner peripheral surface has an inner diameter of the flange portion continuously toward a lower surface of the substrate holding table. An inclined surface that is inclined so as to increase is formed, and the outer peripheral surface is an inclined surface that is inclined so that an outer diameter of the flange portion continuously increases toward a lower surface of the substrate holder. The inclined surface forming a surface continuously moves to the lower surface of the substrate holding table, and provides a substrate holding structure.

  In a preferred embodiment, the lower surface of the substrate holder is a flat surface in a portion joined to the flange portion and a region around the portion.

  In a preferred embodiment, a groove is formed in a part of a portion of the lower surface of the substrate holding table that faces the flange portion, and the flange portion of the substrate holding table is only in the outermost ring-shaped region. It is joined to the bottom surface.

  In a preferred embodiment, the heating mechanism includes an inner heating mechanism part and an outer heating mechanism part formed outside the inner heating mechanism part. The inner heating mechanism part and the outer heating mechanism part include: Driven by first and second drive power supply systems extending inside the column.

  In a preferred embodiment, the substrate holding table has first and second semicircular shapes connected to first and second power supply lines constituting the second drive power supply system, respectively, under the heating mechanism. The first and second conductor patterns substantially include the entire surface of the substrate holder except for a gap region formed between the first and second conductor patterns. cover.

  In a preferred embodiment, the substrate holder and the support column are made of ceramic.

  The present invention further includes a processing container coupled to an exhaust system, a gas supply system for supplying a processing gas into the processing container, and the substrate holding structure provided in the processing container. A substrate processing apparatus is provided.

  According to the present invention, in a substrate holding structure including a support column having a flange portion formed at an upper end portion and a substrate holding table joined to the flange portion, the substrate holding table is provided with a heating mechanism, and the substrate A U-shaped groove extending along the outer peripheral surface of the flange portion is formed on the lower surface of the holding base, and the inner peripheral surface of the U-shaped groove and the outer peripheral surface of the flange portion are connected to a single continuous surface. By connecting so as to form a surface, it is possible to alleviate the concentration of thermal stress on the support column and the substrate holding table with a minimum grinding on the lower surface of the substrate holding table.

  According to the present invention, in a substrate holding structure including a support column having a flange portion formed at an upper end portion and a substrate holding table joined to the flange portion, the substrate holding table is provided with a heating mechanism, The support column is configured to include a flange portion having an inner peripheral surface and an outer peripheral surface at a joint portion with the substrate holding table, and the inner peripheral surface is configured to have an inner diameter of the flange portion toward the lower surface of the substrate holding table. The outer peripheral surface is inclined so that the outer diameter of the flange portion continuously increases toward the lower surface of the substrate holding table. By forming the inclined surface forming the surface and continuously forming the inclined surface forming the outer peripheral surface to the lower surface of the substrate holding table, without grinding the lower surface of the substrate holding table, In the support column and the substrate holder It is possible to alleviate the concentration of stress.

[First embodiment]
FIG. 3 shows the configuration of the substrate processing apparatus 20 according to the first embodiment of the present invention, and FIGS. 4 to 7 show the configuration of the substrate holding structure 50 used in the substrate processing apparatus 20 of FIG.

  Referring to FIG. 3, the substrate processing apparatus 20 includes a processing container 21 connected to an exhaust system (not shown) at an exhaust port 21A. A processing head 21 is supplied with a processing gas from an external gas source (not shown) through a line L to the upper portion of the processing container 21 and discharges the processing gas into a processing space in the processing container 21 through a number of openings 22A. Is provided. Further, a substrate holder 23 for holding a substrate to be processed (not shown) is provided in the processing container 21 so as to face the shower head 22.

  The substrate holder 23 is made of a ceramic material having excellent corrosion resistance such as AlN, high thermal conductivity and resistivity, and excellent thermal shock resistance. The substrate holding table 23 is supported on a support column 23A made of ceramic such as AlN, like the substrate holding table 23. The ceramic parts 23 and 23A are preferably joined to each other by solid phase joining, but can also be joined by solid-liquid joining or brazing. The support column 23A extends in the extending portion 21B extending to the lower portion of the processing container 21, and is fixed on the end portion 21C of the extending portion 21B. Power supply lines 23a and 23b for driving a heating mechanism (heater) embedded in the substrate holding table 23 extend in the column 23A. The power supply lines 23a and 23b are taken out to the outside through a terminal chamber 21D provided at the end portion 21C for preventing oxidation or corrosion of the power supply line. The terminal chamber 21D is provided with an exhaust port 21d for exhausting the inside of the column 23A.

  The processing container 21 </ b> D is formed with an opening 21 </ b> E through which a substrate to be processed is taken in and out at a height corresponding to the substrate holder 23. Although not shown in the drawing, the substrate holding base 23 is formed with lifter pins for lifting the processed substrate.

  3 is formed with a structure for relaxing thermal stress, which will be described later, but this structure is not shown in FIGS. 3 and 4 to 6 for simplicity.

  4 to 6 show a heating mechanism embedded in the substrate holder 23. Referring to FIG. 4, the heating mechanism includes an inner heater pattern 24 </ b> A formed near the center of the substrate holder 23 and an outer heater pattern 24 </ b> B formed outside the inner heater pattern 24 </ b> A. Electric power is supplied to the inner heater pattern 24A through the power supply line 23a. Electric power is supplied to the outer heater pattern 24B via a power supply line 23b and a power supply pattern 24C formed below the heater patterns 24A and 24B.

FIG. 5 is a diagram showing a planar arrangement of the heater patterns 24A and 24B. In FIG. 5, the heater patterns 24A and 24B are hatched. The heater patterns 24A and 24B are made of a heat-resistant metal having substantially the same thermal expansion coefficient as that of AlN forming the substrate holder 23, such as W or Mo. The heater patterns 24A and 24B can be formed by uniformly forming a film made of the refractory metal on the substrate holder 23 and then patterning the cut 24c on the film. Instead, the heater patterns 24A and 24B can be formed by forming grooves in a predetermined pattern on the substrate holder 23 and embedding the refractory metal in the grooves. The heater pattern 24A is connected to one power supply line in the power supply line 23a through a connection part 23a at the center of the substrate holding base 23, and connected to the other power supply line at a connection part 23a ′ at the central part of the substrate holding base 23. ing. Heater pattern 24B is connected to the connection portion 23c to the power supply pattern 24C ₁ which is connected to one of the feed line in the power supply line 23b are connected by the connecting portion 23c 'connected to the power supply pattern 24C ₂ on the other feed line ing.

  The shapes of the heater patterns 24A and 24B are not limited to those shown in the drawings, and may be other shapes, for example, a spiral shape, as long as the calorific value distribution in each heater pattern can be reduced. Further, the heating element of the heating mechanism is not limited to the illustrated plate-like or film-like body, and may be formed by a coiled resistance heating wire.

Figure 6 is a diagram showing the power supply pattern 24C _1, 24C _2, hatching is given in the 6 feeding patterns 24C _1, 24C _2. As shown here, the power feeding patterns 24C ₁ and 24C ₂ are composed of a plurality of conductor films formed in a semicircular shape. The power supply patterns 24C ₁ and 24C ₂ can be formed using the same material and the same manufacturing method as the heater patterns 24A and 24B. The power feeding patterns 24C ₁ and 24C ₂ can be formed in a plate shape, a film shape, or a mesh shape. Feeding patterns 24C ₁ is connected at a connecting portion 23d to one of the feed line in the power supply line 23B, the feeding pattern 24C ₂ are connected at the connecting portion 23d 'to the other feed line in the power supply line 23b.

As described above, in the substrate holding table 23 according to the present embodiment, the inner heater pattern 24A and the outer heater pattern 24B are driven independently, so that the temperature gradient formed in the substrate holding table 23 can be minimized, and the temperature Breakage such as cracks caused by the gradient can be reduced. In addition, since the temperature distribution in the substrate holder 23 can be controlled independently for the inner region and the outer region in this way, uniformity during substrate processing can be improved. The power feeding patterns 24C ₁ and 24C ₂ also generate heat when power is supplied to the heater patterns 24A and 24B. However, since the power feeding patterns 24C ₁ and 24C ₂ are provided over almost the entire surface of the substrate holder 23, the power feeding pattern 24C ₁ Further, the temperature distribution of the substrate holder 23 caused by the heat generation of 24C ₂ is suppressed to the minimum.

  FIG. 7 shows a structure for relieving the thermal stress used in the substrate holder 23 of FIG. Referring to FIG. 7, a column 23A that supports the substrate holder 23 is a cylindrical main body having a flange 23B provided at the upper end of the column 23A and an outer diameter d provided below the flange 23B. Part. The substrate holding base 23 and the column 23A substantially form a rotating body (a solid obtained by rotating a plane around a predetermined axis) as a geometric term.

A ring-shaped groove 23U having a U-shaped cross section (hereinafter referred to as “U-shaped groove 23U”) is formed on the lower surface 231 of the substrate holder 23. The U-shaped groove 23U is defined by a bottom surface 23U ₃ that connects the inner peripheral surface 23U ₁ and the outer peripheral surface 23U ₂ . The inner peripheral surface 23U ₁ and the bottom surface 23U ₃ and the outer peripheral surface 23U ₂ and the bottom surface 23U ₃ has a radius of curvature are smoothly connected via the curved surface of the _{R 1.} The radius of curvature R ₁ is smaller than the depth D of the U-shaped groove 23U. The contour line of the outer peripheral surface 23B ₁ of the flange portion 23B extends in the vertical direction, and the contour line of the inner peripheral surface 23U ₁ of the U-shaped groove 23U extends in the vertical direction on the extension of the contour line of the outer peripheral surface 23B ₁ . . That is, the contour line of the outer peripheral surface 23B _{1 and} the contour line of the inner peripheral surface 23U ₁ form a single continuous straight line (line segment) extending in the vertical direction. Does not exist. That is, the outer peripheral surface 23B ₁ and the inner peripheral surface 23U ₁ form a single cylindrical continuous curved surface in the vicinity of the joint surface 235 (connection point P) between the substrate holding base 23 and the support column 23A. The contour line of the curved surface having a radius of curvature R ₁ forms an arc whose center angle is 90 degrees centered on the point O located at the same height as the connection point P, and is located at a distance above the connection point P by a predetermined distance. Start from P '. According to this configuration, the portion where the thermal stress is maximized can be located at the portion corresponding to the end of the contour line of the inner peripheral surface 23U ₁ of the curved contour line having the radius of curvature R ₁ , in other words Further, it can be positioned at a place other than the joint surface 235 (connection point P) between the substrate holding table 23 and the support column 23A having a low material strength.

When the substrate holding structure 50 is for a wafer having a diameter of 300 mm, the dimensions of each part are, for example, the diameter of the substrate holding table 23 is about 340 mm, the thickness of the substrate holding table 23 is 19 mm, and the diameter of the main body of the support 223A d is about 56 mm, the diameter of the outer peripheral surface 23B1 of the flange 23B of the support 223A is about 86 mm, the width W of the U-shaped groove 23U is about 5 mm, the depth D of the U-shaped groove 23U is about 2.5 mm, and the radius of curvature R ₁ is about 2 mm. From this, the depth D of the U-shaped groove 23U is about 2.5 mm, and the curvature radius R ₁ is about 2 mm. From this, it can be understood that the grinding amount in forming the U-shaped groove 23U is very small. Since the substrate holding table 23 is made of a ceramic material that is difficult to grind, the fact that the amount of grinding can be reduced means that the manufacturing cost of the substrate holding table 23 and, in turn, the substrate holding structure 50 can be greatly reduced. doing.

In addition, it is preferable to set the dimension of each part of the board | substrate holding stand 23 as follows.
-Distance from point P to P ': 0.1 to 0.5 mm, more preferably 0.5 to 1 mm
-Curvature radius R ₁ : 0.5 to 5 mm, more preferably 1 to 3 mm
-Width W of U-shaped groove 23U: 1 to 20 mm, more preferably 5 to 10 mm
-Depth D of U-shaped groove 23U: 1 to 10 mm, more preferably 1 to 5 mm
In the embodiment shown in FIG. 7, U-shaped groove 23U is has a bottom surface 23U ₁ extending in the horizontal direction, but is not limited to this. As indicated by a broken line on the right side of FIG. 7, the inner peripheral surface 23U ₁ and the outer peripheral surface 23U ₂ may be connected by a surface 236 having a single predetermined radius of curvature.

  A ring-shaped groove 232 is further formed on the lower surface 231 of the substrate holder 23. The depth of the groove 232 does not need to be increased, and is about 1 mm, for example. By providing the groove 232, a gap is formed between the upper surface 234 of the flange portion 23B of the support 23A and the substrate holding base 23, thereby reducing the area of the joint surface 235 between the substrate holding base 23 and the support 23A. ing. Since the temperature difference between the substrate holding base 23 incorporating the heating mechanism and the column 23A without the heating mechanism is large, if the area of the bonding surface 235 is too large, the thermal stress in the vicinity of the bonding surface 235 increases. If the area of the bonding surface 235 is too large, the amount of heat flowing from the substrate holding table 23 to the support 23A increases, and the temperature uniformity of the substrate holding table 23 is deteriorated. In order to avoid such a problem, the width W ′ of the bonding surface 235 is set to a value as small as possible, for example, about 4 mm, as long as sufficient bonding strength between the substrate holding base 23 and the column 23A can be ensured. Note that the U-shaped groove 23U and the ring-shaped groove 232 are formed by grinding the flat lower surface 231 of the substrate holding base 23 located in a single horizontal plane. Further, the joint surface 235 is located outside the cylinder coaxial with the column 23A having the same diameter as the diameter d of the column 23A.

Furthermore, the inner peripheral surface of the flange portion 23B is an inclined surface 23f, which reduces the concentration of thermal stress on the portion. In addition, a curved surface 23R having a curvature R ₂ is also formed at the transition portion from the main body portion of the support 23A to the flange portion 23B, thereby reducing the concentration of thermal stress in the portion.

FIG. 8A shows the stress distribution when a so-called center-cool temperature gradient occurs in the substrate holding structure of FIG. 7 in which the temperature of the central portion is low and the temperature of the peripheral portion is high in the substrate holding table 23. Show. The alphabet attached to each region indicates the level of stress, where A is a region where a stress exceeding +6.79 kgf · mm ⁻² is generated, and B is a stress between +5.43 to +6.79 kgf · mm ⁻² . occur and region, a region area where stress C is + 4.07~ + 5.43kgf · mm ^-2 has occurred, the stress of D of + 2.71~ + 4.07kgf · mm ^-2 has occurred, E +1 .35 to +2.71 kgf · mm ⁻² stress region, F is 0 to +1.35 kgf · mm ⁻² stress region, G is −1.37 to 0 kgf · mm ⁻² Each region where stress occurs is shown. Note that plus means tensile stress and minus means compressive stress.

Referring to FIG. 8A, in the center cool state, in the substrate holding table 23, the central portion contracts with respect to the peripheral portion. Tend to occur. However, it can be seen that the stress concentration is remarkably reduced by forming the U-shaped groove 23U at a position corresponding to the outer peripheral surface 23B ₁ . In the state of FIG. 8A, it can be seen that the maximum tensile stress (the value is greater than 8.15 kg · mm ⁻² ) is generated in the curved surface portion of the U-shaped groove 23U with the curvature radius R ₁ ( (See arrow MAX). What should be particularly noted is that no stress concentration occurs at the joint between the substrate holder 23 and the support 23A.

  On the other hand, FIG. 8B shows a stress distribution in a so-called center hot state in which the central portion of the substrate holding table 23B is high temperature and the peripheral portion is low temperature.

  In this case, it can be seen that there is almost no concentration of thermal stress in the vicinity of the joint between the support 23A and the support 23A.

As described above, in the substrate holding structure according to the present embodiment, the concentration of thermal stress is reduced while minimizing the amount of grinding of the bottom surface of the substrate holding table 23 (see the comparison with the prior art shown in FIGS. 1 and 2). be able to. Further, by independently driving the heaters 24A and 24B, the temperature gradient generated in the substrate holder 23 can be minimized. As a result, it is possible to form a highly reliable substrate holding structure that is not likely to be damaged at low cost.

[Second Embodiment]
FIG. 9 shows a configuration of the substrate holding structure 40 according to the second embodiment of the present invention. In FIG. 9, the same parts as those in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

Referring to FIG. 9, the substrate holding structure 40 according to the present embodiment has a configuration similar to that of the substrate holding structure 20 according to the first embodiment, but the outer peripheral portion of the flange portion 23 </ b> B of the support 23 </ b> A is the flange portion 23. The main difference is that the outer surface has an inclined surface 33B ₁ which is inclined so that the diameter increases as it approaches the back surface of the substrate holder 23.

The contour line of the inclined surface 33B ₁ is curved so as to continuously transition to the contour line of the lower surface of the substrate holder 23. In other words, the inclination of the tangent line of the inclined surface 33B ₁ with respect to the horizontal plane gradually approaches 0 degrees as it approaches the lower surface of the substrate holder 23. As a result, no step is formed between the outer peripheral surface 33B ₁ and the lower surface of the substrate holder 23 so as to cause stress concentration.

  In the present embodiment, it is not necessary to grind the lower surface of the substrate holding table 23, and therefore the manufacturing cost of the substrate holding structure can be further reduced.

  Also in this embodiment, by separately driving the inner heater 23A and the outer heater 23B on the substrate holding table 23, it is possible to minimize the generation of temperature gradient in the substrate holding table 23, and to generate thermal stress. It can suppress itself.

  In the above description, the substrate holding structure 20 or 40 is used in the CVD apparatus shown in FIG. 3. However, the present invention is not limited to this, and a plasma CVD apparatus or a heat treatment (RTP) apparatus is used. It can be applied to general substrate processing apparatuses such as an etching apparatus.

  As mentioned above, although this invention was demonstrated about the preferable Example, this invention is not limited to said Example, A various deformation | transformation and change are possible within the summary described in the claim.

It is a figure which shows the structure of the conventional board | substrate holding structure. It is a figure which expands and shows a part of substrate holding structure of FIG. It is a figure which shows the structure of the substrate processing apparatus by 1st Example of this invention. It is a figure which shows schematic structure of the substrate holding structure used with the substrate processing apparatus of FIG. It is a figure which shows the heating mechanism used with the board | substrate holding structure of FIG. It is another figure which shows the heating mechanism used with the board | substrate holding structure of FIG. It is a figure which shows the stress relaxation structure used with the board | substrate holding structure of FIG. (A), (B) is a figure which shows the thermal-stress distribution which arises in the board | substrate holding structure of FIG. 7 about the state of a center cool, and the state of a center hot, respectively. It is a figure which shows the structure of the substrate processing apparatus by 2nd Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Board | substrate holding stand 10A Protrusion part 10B Side wall surface 11 Support | pillar 11A Flange part 11B Transition part 20 Substrate processing apparatus 21 Processing container 21A, 21d Exhaust port 21B Extension part 21C End part 21D Terminal chamber 21E Opening part 22 Shower head 22A Opening part 23 Substrate holder 23A Prop 23B Flange portion 23B ₁ Outer surface 23R Transition portion 23U U-shaped groove 23U ₁ U-shaped groove inner surface 23U ₂ U-shaped groove outer surface 23U ₃ U-shaped groove bottom surface 23a, 23b Power supply line 23a , 23a ′, 23c, 23c ′, 23d, 23d ′ Connection portion 23f Flange inner peripheral surface 24 Heating mechanism 24A Inner heater pattern 24B Outer heater pattern 24C, 24C ₁ , 24C ₂ Feeding pattern 231 Substrate holding base lower surface 232 Ring-shaped groove 234 Flange top surface 235 Joint surface 236 Single song Head

Claims (16)

A substrate holding structure including a support column having a flange portion formed at an upper end portion and a substrate holding base joined to the flange portion,
The substrate holder includes a heating mechanism,
A U-shaped groove extending along the outer peripheral surface of the flange portion is formed on the lower surface of the substrate holding table,
A substrate holding structure, wherein an inner peripheral surface of the U-shaped groove and an outer peripheral surface of the flange portion are connected so as to form a continuous single surface.   When viewed in cross-section, a single line segment in which the end on the flange portion side of the contour line of the inner peripheral surface of the U-shaped groove and the contour line of the outer peripheral surface of the flange portion extend in the vertical direction. The substrate holding structure according to claim 1, wherein the substrate holding structure is located above. The substrate holding structure is manufactured by joining the flange portion and the substrate holding stand after individually forming them,
The joint surface between the flange portion and the substrate holder is located within a range corresponding to a single line segment extending in the vertical direction.
The substrate holding structure according to claim 2. The inner peripheral surface of the flange portion forms an inclined surface that is inclined so that the inner diameter of the flange portion continuously increases toward the lower surface of the substrate holder. ,
The board | substrate holding structure as described in any one.   A groove is formed in a part of the lower surface of the substrate holding table facing the flange portion, and the flange portion is joined to the lower surface of the substrate holding table only in the outermost ring-shaped region. The substrate holding structure according to any one of claims 1 to 4, wherein   The heating mechanism includes an inner heating mechanism portion and an outer heating mechanism portion formed outside the inner heating mechanism portion, and the inner heating mechanism portion and the outer heating mechanism portion extend inside the column. The substrate holding structure according to any one of claims 1 to 5, wherein the substrate holding structure is driven by a first drive power system and a second drive power supply system, respectively.   The substrate holder has semicircular first and second conductor patterns connected to first and second power supply lines constituting the second drive power supply system under the heating mechanism, respectively. The first and second conductor patterns substantially cover the entire surface of the substrate holder except for a gap region formed between the first and second conductor patterns. The substrate holding structure according to claim 6.   The substrate holding structure according to claim 1, wherein the substrate holding table and the support column are made of ceramic. A processing vessel coupled to the exhaust system;
A gas supply system for supplying a processing gas into the processing container;
A substrate processing apparatus comprising the substrate holding structure according to claim 1 provided in the processing container. A substrate holding structure including a support column having a flange portion formed at an upper end portion and a substrate holding base joined to the flange portion,
The substrate holder includes a heating mechanism,
The support column includes a flange portion having an inner peripheral surface and an outer peripheral surface at a joint portion with the substrate holder,
The inner peripheral surface forms an inclined surface that is inclined so that the inner diameter of the flange portion continuously increases toward the lower surface of the substrate holder.
The outer peripheral surface forms an inclined surface that is inclined so that the outer diameter of the flange portion continuously increases toward the lower surface of the substrate holder.
The substrate holding structure according to claim 1, wherein the inclined surface forming the outer peripheral surface continuously moves to a lower surface of the substrate holding table.   11. The substrate holding structure according to claim 10, wherein the lower surface of the substrate holding table is a flat surface in a portion joined to the flange portion and a surrounding region.   A groove is formed in a part of the lower surface of the substrate holding table facing the flange portion, and the flange portion is joined to the lower surface of the substrate holding table only in the outermost ring-shaped region. The substrate holding structure according to claim 10, wherein:   The heating mechanism includes an inner heating mechanism portion and an outer heating mechanism portion formed outside the inner heating mechanism portion, and the inner heating mechanism portion and the outer heating mechanism portion extend inside the column. The substrate holding structure according to any one of claims 10 to 12, wherein the substrate holding structure is driven by a first drive power system and a second drive power supply system, respectively.   The substrate holder has semicircular first and second conductor patterns connected to first and second power supply lines constituting the second drive power supply system under the heating mechanism, respectively. The first and second conductor patterns substantially cover the entire surface of the substrate holder except for a gap region formed between the first and second conductor patterns. The substrate holding structure according to claim 13.   The substrate holding structure according to any one of claims 10 to 14, wherein the substrate holding table and the support column are made of ceramic. A processing vessel coupled to the exhaust system;
A gas supply system for supplying a processing gas into the processing container;
The substrate processing apparatus provided with the substrate holding structure as described in any one of Claims 10-15 provided in the said processing container.