JP2005101109A - Solid-state imaging device, manufacturing method thereof, image storage device, and image transmission device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state imaging device with high color reproducibility, a manufacturing method thereof, an image storage device, and an image transmission device.
A complementary color type solid-state imaging device having an imaging region in which a plurality of pixels are arranged on a semiconductor substrate, wherein the first to third types of pixels 21, 22, and 23 are each red. , Cyan, magenta and yellow filters 5, 6, and 7 having photonic band gaps corresponding to green and blue, each filter having a periodic refractive index change structure. Each filter is composed of a plurality of fine particles having different particle diameters and has one or more hexagonal close-packed structures. The manufacturing method includes a step of dropping an aqueous solution containing fine particles into the concave portions provided on the light receiving surfaces of the light receiving portions 2, 3, and 4, respectively, and heating to evaporate water to form using self-organization. including. In addition, the entrance surfaces of the filters have different curvatures, and the light is condensed simultaneously.
[Selection] Figure 1

Description

  The present invention relates to a solid-state imaging device used for a digital still camera, a digital video camera, a mobile phone with a camera, a manufacturing method thereof, an image storage device, and an image transmission device.

  The market for solid-state imaging devices represented by CCD (charge-coupled device) and MOS (metal-oxide-semiconductor) sensors begins with video cameras and video movies, digital video cameras (DVC), digital still cameras (DSC), Furthermore, the market for camera-equipped mobile phones is expanding. One important technique required for such a solid-state imaging device is a color separation technique for colorization. There are two types of color separation methods for solid-state imaging devices. One is a primary color system that separates color image information (light) into red light, green light, and blue light and inputs them to the light receiving element. The other is cyan (blue-green) color light, magenta (red purple). This is a complementary color system that separates into colored light and yellow light and inputs them to the light receiving element. The complementary color method requires a calculation unit that converts the complementary color into a primary color. However, since the amount of transmitted light is larger than that in the primary color method, a highly sensitive solid-state imaging device can be realized.

  Conventional color filters for complementary colors include dye methods, pigment methods, and interference filter methods. The dye method is a method for dyeing the filter itself, but it is not suitable for long daytime photography because of low light resistance. The pigment system is a system in which pigment particles (particle size 60 to 100 nm) that absorb light of a specific color are placed inside the filter. When the pixel size of the solid-state imaging device is large (the number of pixels is small), the pigment particles are not so problematic. However, when the pixel size of the solid-state imaging device is small (the number of pixels is large), slight light scattering at the pigment particles causes noise. There is an interference filter system as a means for solving these problems. This utilizes the fact that a specific color is transmitted and a specific color is reflected by interference of light in the multilayer film. Details of the interference filter are disclosed in Non-Patent Document 1, for example.

  FIG. 9 is a diagram illustrating an example of a conventional solid-state imaging device using an interference filter. FIG. 9 shows a cyan pixel 91, a magenta pixel 92, and a yellow pixel 93. On the Si substrate 1, light receiving portions 2, 3 and 4 for cyan, magenta and yellow are provided. In addition, although there are actually wiring and a light shielding layer, they are omitted in the figure. Cyan / magenta / yellow interference filters 75, 76, and 77 formed of a multilayer film of titanium oxide and silicon oxide are formed on the light receiving portions 2, 3, and 4, respectively. A silicon nitride protective layer 8 is formed around the cyan / magenta / yellow interference filters 75, 76, and 77. Further, on the silicon nitride protective layer 8, microlenses 9, 10 and 11 are respectively provided for condensing light.

Here, for example, the transmission characteristics of the magenta interference filter 76 are as shown in FIG. As can be seen, green light having a wavelength of 530 to 600 nm is hardly transmitted. Therefore, the transmitted light is only the magenta component of the incident light.
A technique for attaching a photonic crystal to the surface of a light receiving element is disclosed in Patent Documents 1 and 2, for example. In the technique disclosed in Patent Document 1, in order to use a photonic crystal as a color filter of a light receiving element, a manufacturing technique is disclosed in which a flat layer is formed on the light receiving element and the photonic crystal is formed on the flat layer. ing. However, there is no mention at all of the problems of the complementary color type solid-state imaging device as in the present invention described below and the invention for solving the problems by using photonic crystals. In the technique disclosed in Patent Document 2, each pixel is color-separated by an interference filter on a CCD, and unnecessary light reflected by the interference filter is incident on an adjacent pixel. Patent Document 2 uses a photonic crystal for propagation of unnecessary light to adjacent pixels as an example, but the problem of the interference filter addressed by the present invention described later is not described, and in order to solve the problem There is no mention of using photonic crystals as complementary color filters.
JP 2001-160654 A JP 2003-78917 A “Optical / Thin Film Technology Manual”, Optronics, published in 1989, p.250 K. Fukuda, H. -B. Sun, S. Matsuno, and H. Misawa, "Self-organizing three-dimensional colloidal photonic structure with argumented dielectric contrast," Jpn, J. Appl. Phys. 37, (1998) L508

  Now, the interference filter has a property that the filter characteristic changes depending on the incident angle. That is, the filter characteristic of oblique light incidence (incident angle θ) is the characteristic when the film thickness is reduced by cos θ, as opposed to the filter characteristic of normal incidence (incident angle 0 °). For example, an interference filter having characteristics as shown in FIG. 10 with respect to light having an incident angle of 0 ° has transmission characteristics as shown in FIG. 11 with respect to light having an incident angle of 20 °, and has a transmission region of about 50 nm. It shifts to the short wavelength side. That is, since different colors are incident on the normal incident light and the oblique incident light, the color resolution (color purity) is lowered. In particular, in a solid-state imaging device incorporated in a short focus system such as a camera for a mobile phone, light incident on the solid-state imaging device has a spread of 20 to 30 ° with respect to the main optical axis. When an interference filter is used for such light, light having a color different from that of the main optical axis is included in the wide-angle incident light, resulting in poor color resolution and a problem in color reproducibility. That is, a phenomenon occurs in which the degree of color misregistration at the peripheral portion is larger than that at the central portion of the image.

  Therefore, an object of the present invention is to provide a solid-state imaging device having high color reproducibility and a method for manufacturing the same. Furthermore, a second object is to provide a solid-state imaging device having a configuration with a small number of parts that does not require a microlens and a manufacturing method thereof by providing each filter with a condensing function of the microlens.

  In order to solve the above problems, the present invention provides a complementary color type solid-state imaging device comprising an imaging region in which a plurality of first to third type pixels are arranged on a semiconductor substrate. One type of pixel includes a cyan filter unit having a photonic band gap corresponding to red, and a cyan light receiving unit that receives light that has passed through the cyan filter unit. A magenta filter means having a photonic band gap corresponding to green; and a magenta light receiving means for receiving light that has passed through the magenta filter means. A yellow filter means having a band gap; and a yellow light receiving means for receiving light that has passed through the yellow filter means. And having a periodically change in refractive index structure. Further, each of the filter means has one or more hexagonal close-packed structures each composed of a plurality of fine particles. Further, the particle diameter of the fine particles is different for each of the filter means.

  In general, a structure having a periodic refractive index change is called a photonic crystal. A photonic crystal having a characteristic in which light having a specific range of frequencies (wavelengths) cannot propagate can be manufactured. This frequency (wavelength) band where light cannot propagate is called a photonic band gap. This phenomenon is similar to the formation of an energy band gap of electrons in a semiconductor due to a periodic change in potential due to atoms in the semiconductor. When light is incident on a photonic crystal having a photonic band gap, light having a wavelength in the photonic band gap is reflected at any incident angle and does not pass through the photonic crystal. This is because light of this wavelength cannot propagate through the photonic crystal. On the other hand, light having a wavelength other than the photonic band gap passes through the photonic crystal. The photonic crystal is a so-called three-dimensional interference filter, and does not have the disadvantages of dye and pigment filters such as resistance and scattering properties. On the other hand, unlike a simple interference filter, the photonic band gap reflects light from all directions, so that the transmission characteristics of the photonic crystal hardly change depending on the incident angle.

  The transmitted light of the three types of periodic refractive index changing structures configured so that the photonic band gaps are red, green, and blue are cyan, magenta, and yellow, respectively. Color can be entered. Further, when the periodic refractive index changing structure has a hexagonal close-packed structure, it becomes easy to have equal band gaps for light in various directions. In the periodic refractive index change structure, the change in the cutoff frequency band of the filter characteristics due to the incident angle is extremely small, so by incorporating an arithmetic circuit that converts the input complementary color into the primary color, a solid-state imaging device with excellent color reproducibility Can be realized.

  In addition, the incident surfaces of the filter means have different curvatures. Thereby, since each filter means can also have the condensing function of a microlens, a microlens can be deleted from a component and a solid-state imaging device with fewer parts than before can be realized. At this time, the focal position can be made the same for each pixel by making the curvature of the incident surface of each filter means different in consideration of chromatic dispersion.

In addition, these solid-state imaging devices are incorporated in an image storage device that stores captured images in a memory or an image transmission device that transmits captured images to an external device. Thereby, the primary color signals of red, green and blue can be stored or transmitted.
Further, in a method for manufacturing a solid-state imaging device, a dropping step of dropping an aqueous solution of a raw material containing the fine particles into a recess provided on a light receiving surface of each of the light receiving means, and the dripping step And a filter forming step of forming the hexagonal close-packed structure using a self-organization method by heating the aqueous solution to evaporate water. By using this method, it is possible to easily produce a higher-order periodic refractive index changing structure at a predetermined position by simply controlling the evaporation rate of moisture as compared with the conventional case.

  Further, in a method for manufacturing a solid-state imaging device, a nozzle dropping step of dropping an aqueous solution of a raw material containing the fine particles on a light receiving surface of each of the light receiving units with a nozzle, and the drops dropped in the nozzle dropping step Forming a hexagonal close-packed structure having a curvature using a self-organization method by heating an aqueous solution to evaporate water, and in the nozzle dripping step, The curvature of the hexagonal close-packed structure is made different by changing the amount of the aqueous solution dropped onto the light receiving surface. Thereby, since the dropped aqueous solution becomes hemispherical due to surface tension, the shape of the microlens can be given to each filter means. Further, since the particle diameters of the periodic refractive index changing structures in the respective pixels are different, it is possible to manufacture the periodic refractive index changing structures having different band gaps.

  Furthermore, the nozzle dripping step uses a plurality of the nozzles. Thereby, a plurality of microlens-like color filters can be produced at a time, and productivity can be improved.

  The solid-state imaging device and the manufacturing method thereof according to the present invention are for realizing complementary color filter characteristics by using a photonic band gap of a periodic refractive index changing structure in which a change in a cutoff frequency band of filter characteristics depending on an incident angle is extremely small. By incorporating this solid-state imaging device, it is possible to realize a digital camera, video camera, camera-equipped mobile phone, etc. with little color mixing, and its practical value is extremely high.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
FIG. 1 is a diagram showing a basic structure of a solid-state imaging device according to Embodiment 1 of the present invention. This solid-state imaging device is composed of horizontal 1600 × 1200 = 19,220,000 pixels, and only the three pixels (the cyan pixel 21, the magenta pixel 22, and the yellow pixel 23) are shown in FIG.

  On the surface of the Si substrate 1, a cyan light receiving portion 2, a magenta light receiving portion 3, and a yellow light receiving portion 4 are formed. These light receiving sections 2, 3 and 4 have the same structure, but are connected to cyan, magenta and yellow signal processing circuits (not shown), respectively. In addition, there are a wiring, a light shielding layer, a charge coupled device, and the like, which are omitted in the drawing. A cyan color filter 5, a magenta color filter 6, and a yellow color filter 7 made of a photonic crystal having a configuration to be described later are formed on the surfaces of the light receiving portions 2, 3, and 4, respectively. A protective layer 8 made of silicon nitride is formed around the color filters 5, 6 and 7. Microlenses 9, 10 and 11 for condensing light are respectively formed on the surface.

FIG. 2 shows an external view of a part of the photonic crystal used in the magenta color filter 6. Here, a photonic crystal is formed by self-organization of fine particles (see, for example, Non-Patent Document 2 for self-organization of fine particles). As shown in the figure, spherical SiO ₂ fine particles 15 having a particle diameter of 240 nm are regularly arranged to form a hexagonal close-packed structure. The refractive index of this SiO ₂ is 1.5. As described above, when the SiO ₂ fine particles are regularly arranged in the air (refractive index is 1), the periodic refractive index is three-dimensionally changed to form a photonic band gap.

FIG. 3 shows the transmission characteristics of the filter obtained by the three-dimensional photonic crystal composed of SiO ₂ described with reference to FIG. 2, and the incident angle is 0 °, that is, when the light is incident perpendicularly to the surface. FIG. As can be seen from the figure, transmission of light in the green region is blocked, and it can be seen that the filter is a magenta color filter.
On the other hand, the transmission characteristics in this photonic crystal when the incident angle is 20 ° are shown in FIG. It can be seen that the transmission characteristics hardly change compared to FIG. 3 (no deviation from the characteristics of FIG. 3 occurs). That is, unlike the conventional interference filter, the color separation characteristics are almost the same for oblique light. As for the photonic crystals used for the cyan and yellow color filters, if the particle diameters of the SiO ₂ fine particles are 270 nm and 200 nm, respectively, as in the magenta color filter shown in FIGS. Even with respect to the above light, good characteristics can be obtained in which the color separation characteristics are almost the same as those when the light is incident perpendicularly to the surface.

FIG. 5 is a configuration diagram of a digital camera using the solid-state imaging device according to Embodiment 1 of the present invention. Incident light 100 imaged by F = 2.5 lens 101 is incident on solid-state imaging device 102 having a complementary color photonic color filter on the surface. Although the solid-state imaging device 102 only shows three pixels in the figure, as described with reference to FIG. 1, 1.92 million pixels are installed. From the solid-state imaging device 102, Y (yellow), M (magenta), and C (cyan) signals (two-dimensional image signals) are extracted. These signals are converted into primary color signals by the arithmetic circuit 103. That is,
Green light = (M + C−Y) / 2 (1)
Green signal = (Y + C−M) / 2 (2)
Red signal = (Y + MC) / 2 (3)
Conversion is performed using the following three expressions. The arithmetic circuit 103 is either built in the solid-state imaging device 102 or externally attached. With this configuration, the image data can be realized as an image storage device that can be stored in the recording medium 104 (tape, flash memory, etc.) after being converted to the primary color signal, or the image can be transmitted to another external device by the communication unit 105. It can be realized as an image transmission device.

FIG. 6 shows a manufacturing process of the solid-state imaging device according to the first embodiment. First, as shown in FIG. 6A, the light receiving elements 2, 3, 4 and the wiring, the light shielding layer, the charge coupled device, etc. (not shown except for the light receiving element) are formed on the Si substrate 1 by using a normal semiconductor process. Form. Note that the size of one pixel is 2.5 μm square, and the light receiving portions 2, 3 and 4 are 1.5 μm square. Thereafter, as shown in FIG. 6B, a resist 31 having an opening 32 only on the magenta portion is formed by using normal photolithography. At this time, the thickness of the resist is 3 μm. An aqueous solution containing SiO ₂ fine particles (particle size 240 nm) is dropped into the opening 32. Thereafter, heating is performed to evaporate water in the aqueous solution. At this time, as disclosed in Non-Patent Document 2, for example, when the water evaporation rate is sufficiently slow, the SiO ₂ fine particles are three-dimensionally self-organized as shown in FIG. As shown in c), a three-dimensional photonic crystal layer is formed. Next, as shown in FIG. 6D, the resist is removed using acetone to form the magenta photonic crystal color filter 6 on the magenta light receiving element. Similarly, as shown in FIGS. 6E to 6G and FIGS. 6H to 6J, resist formation by photolithography, dropping of an aqueous solution containing SiO ₂ fine particles, heating, and resist removal are sequentially performed. Thus, the yellow photonic crystal color filter 7 and the cyan photonic crystal color filter 5 are sequentially formed. In the case of producing a photonic crystal for yellow and a photonic crystal for cyan, fine particles having a particle size of 270 nm and 200 nm are used, respectively. Next, as shown in FIG. 6K, the silicon nitride protective film 8 is formed on the entire surface by sputtering. Finally, as shown in FIG. 6 (l), a microlens 9, 10 and 11 is formed by dropping resin on each pixel and heating.

  As described above, in the solid-state imaging device and the manufacturing method thereof according to Embodiment 1 of the present invention, the solid-state imaging device with high color reproducibility and the method of manufacturing the solid-state imaging device with a small change in the cutoff frequency band of the filter characteristics depending on the incident angle Can be realized.

(Embodiment 2)
FIG. 7 is a diagram showing a solid-state imaging device according to Embodiment 2 of the present invention. As shown in the figure, the cyan pixel 81, the magenta pixel 82, and the yellow pixel 83 have photonic crystals 51, 52, and 53 having cyan, magenta, and yellow color filter functions, respectively. Since they have a hemispherical shape, they also have a condensing function of microlenses. By making the curvature of the hemispherical photonic crystals 51, 52 and 53 different for each pixel in consideration of chromatic dispersion, the focal point of the microlens is made the same.

Here, the longer the wavelength, the larger the curvature radius. Also, the higher the refractive index of the material, the smaller the radius of curvature must be.
In the conventional interference filter, the color separation characteristics differ depending on the direction of incident light. Therefore, when the interference filter is processed into a microlens shape, the color reproducibility is significantly deteriorated. However, in the present invention, since the filter / microlens is formed using a three-dimensional photonic crystal whose color separation characteristics hardly change depending on the direction of incident light, color reproducibility is not deteriorated.

At this time, the filter / microlens can be regarded as equivalent to being made of a material whose filling factor is approximately _twice the refractive index of SiO ₂ , and light is collected at the focal position determined by the equivalent refractive index and the surface curvature. Shine.
Accordingly, a configuration that eliminates the need for a microlens that is a constituent element of a conventional solid-state imaging device can be realized, so that the solid-state imaging device can be realized at lower cost.

FIG. 8 is a diagram illustrating a method for manufacturing a solid-state imaging device according to Embodiment 2 of the present invention. First, as shown in FIG. 8 (a), the light receiving elements 2, 3, 4 and the wiring, the light shielding layer, the charge coupled device, etc. (not shown except for the light receiving element) are formed on the Si substrate 1 by using a normal semiconductor process. Form. Next, as shown in FIG. 8 (b), the aqueous solutions 57, 58 containing SiO ₂ fine particles on the respective light receiving elements 2, 3 and 4 by using the nozzles 54, 55 and 56 and the nozzles 54, 55 and 56, and 59 is dropped. Here, the particle size of SiO ₂ contained in the nozzles 54, 55 and 56 is different from 200 nm, 240 nm and 270 nm, respectively. The amount of liquid dropped from the nozzles 54, 55 and 56 is very small. After dropping, the surface of the Si substrate 1 has hemispherical droplets 60, 61 and 60 of SiO ₂ aqueous solution as shown in FIG. 62 is formed. At this time, each droplet 60, 61, and 62 maintains a hemispherical shape without spreading due to surface tension.

Then gently heated, and evaporation of the water, the three-dimensional photonic crystal composed of SiO ₂ particles by self-assembly of fine SiO ₂ particles are formed in a hemispherical shape, after all, cyan having a function of microlenses, A magenta and a yellow color filter are respectively formed. Thus, a more compact manufacturing method than the conventional manufacturing method of a solid-state imaging device can be realized.

By using this hemispherical photonic crystal, the light collection efficiency is improved by about 1.2 times that of the photonic crystal according to the first embodiment.
As described above, in the solid-state imaging device and the manufacturing method thereof according to Embodiment 2 of the present invention, the change in the cutoff frequency band of the filter characteristics due to the incident angle is small, and the condensing function of the microlens is also provided in each filter. A solid-state imaging device having a small number of parts and a manufacturing method thereof can be realized.

  The structure of the photonic crystal is not limited to the hexagonal close-packed structure composed of a plurality of fine particles described in the first and second embodiments of the present invention. For example, by using self-cloning, a photonic crystal produced by repeatedly laminating and etching a film with a bias sputtering apparatus on a periodically drilled substrate and similarly laminating and etching another material. Of course you can use it.

The material of the fine particles is not limited to SiO ₂ described in the embodiment of the present invention, and may be any material that is transparent in the visible light range (350 to 750 nm). For example, metal oxides such as TiO ₂ (refractive index 2.5), Nb ₂ O ₅ (refractive index 2.4), and Ta ₂ O ₅ (refractive index 2.2), and polystyrene (refractive index 1.6). Organic substances such as) can also be used.

  The solid-state imaging device and the manufacturing method thereof according to the present invention have an effect of high image quality and high color reproducibility, and are used as a solid-state imaging device and a manufacturing method thereof used in a digital camera, an image storage device, an image transmission device, and the like. Useful.

1 is a cross-sectional structure diagram of a solid-state imaging device according to Embodiment 1 of the present invention. It is an external view of the photonic crystal in the solid-state imaging device which concerns on Embodiment 1 of this invention. It is a figure which shows the permeation | transmission characteristic (when incident angle is 0 degree) of the photonic crystal for magenta color filters in the solid-state imaging device concerning Embodiment 1 of this invention. It is a figure which shows the transmission characteristic (when incident angle is 20 degrees) of the photonic crystal for magenta color filters in the solid-state imaging device concerning Embodiment 1 of this invention. 1 is a configuration diagram of a digital camera using a solid-state imaging device according to Embodiment 1 of the present invention. It is a manufacturing process figure of the solid-state imaging device concerning Embodiment 1 of the present invention. It is a cross-section figure of the solid-state imaging device concerning Embodiment 2 of this invention. It is a manufacturing process figure of the solid-state imaging device concerning Embodiment 2 of the present invention. It is a cross-sectional structure diagram of a conventional solid-state imaging device. It is a figure which shows the transmission characteristic (when incident angle is 0 degree) of the magenta color interference filter in the conventional solid-state imaging device. It is a figure which shows the transmission characteristic (when incident angle is 20 degrees) of the magenta color interference filter in the conventional solid-state imaging device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Si substrate 2 Cyan light-receiving part 3 Magenta light-receiving part 4 Yellow light-receiving part 5 Cyan filter photonic crystal 6 Magenta filter photonic crystal 7 Yellow filter photonic crystal 8 Protective layer 9, 10, 11 Micro Lens 15 Fine particle 21, 81, 91 Cyan pixel 22, 82, 92 Magenta pixel 23, 83, 93 Yellow pixel 31 Resist 32 Resist opening 51 Micro photonic crystal for cyan filter with micro lens function 52 With micro lens function Photonic crystal for magenta color filter 53 Photonic crystal for yellow filter with microlens function 54 Nozzle for cyan aqueous solution 55 Nozzle for magenta aqueous solution 56 Nozzle for yellow aqueous solution 57 Cyan aqueous solution (drip state)
58 Magenta aqueous solution (drip state)
59 Yellow aqueous solution (drip state)
60 Cyan water droplet 61 Magenta water droplet 62 Yellow water droplet 75 Cyan interference filter 76 Magenta interference filter 77 Yellow interference filter 100 Incident light 101 Incident lens 102 Solid-state imaging device 103 Arithmetic circuit 104 Recording device 105 Wireless device

Claims (14)

A complementary color type solid-state imaging device comprising an imaging region in which a plurality of first to third types of pixels are arranged on a semiconductor substrate,
The first type of pixel is:
A filter means for cyan having a photonic band gap corresponding to red;
A cyan light receiving means for receiving light that has passed through the cyan filter means,
The second type of pixel is:
Magenta filter means having a photonic band gap corresponding to green; and
A magenta light receiving means for receiving light that has passed through the magenta filter means;
The third type of pixel is:
Filter means for yellow having a photonic band gap corresponding to blue;
A yellow light receiving means for receiving light that has passed through the yellow filter means,
Each said filter means has a periodic refractive index change structure, respectively. The solid-state imaging device characterized by the above-mentioned. The solid-state imaging device according to claim 1, wherein each of the filter units has one or more hexagonal close-packed structures. The solid-state imaging device according to claim 2, wherein each of the filter units includes a plurality of fine particles. The solid-state imaging device according to claim 3, wherein the particle diameter of the fine particles is different for each of the filter units. The solid-state imaging device according to any one of claims 1 to 4, wherein each of the filter units condenses passing light. The solid-state imaging device according to claim 5, wherein an incident surface of each filter means has a curvature. The solid-state imaging device according to claim 6, wherein the curvature is different for each of the filter units. A device for storing captured images in a memory,
An image storage device comprising the solid-state imaging device according to claim 1. An apparatus for transmitting a captured image to an external device,
An image transmission device comprising the solid-state imaging device according to claim 1. A manufacturing method of the solid-state imaging device according to claim 3,
A dropping step of dropping an aqueous solution of the raw material containing the fine particles into a recess provided on the light receiving surface of each light receiving means;
A solid-state imaging device comprising: a filter forming step of heating the aqueous solution dropped in the dropping step to evaporate water and forming the hexagonal close-packed structure using a self-organizing method. Manufacturing method. A method for producing a solid-state imaging device according to claim 6,
A nozzle dropping step of dropping an aqueous solution of the raw material containing the fine particles on the light receiving surface of each of the light receiving means with a nozzle;
A lens filter forming step of heating the aqueous solution dropped in the nozzle dropping step to evaporate moisture and forming the hexagonal close-packed structure having a curvature by using a self-organization method. A method for manufacturing a solid-state imaging device. The method for manufacturing a solid-state imaging device according to claim 11, wherein a plurality of the nozzles are used in the nozzle dropping step. 12. The curvature of the hexagonal close-packed structure is made different by changing the amount of the aqueous solution dripped onto the light receiving surface of each light receiving means in the nozzle dropping step. Or a method for producing a solid-state imaging device according to 12; The method of manufacturing a solid-state imaging device according to any one of claims 10 to 13, wherein the fine particles have different particle sizes for each of the filter units.

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