JP2005158971A - Semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and its manufacturing method by which emission intensity can be increased than heretofore. <P>SOLUTION: The manufacturing method includes a stacking step wherein a plurality of semiconductors 12 are respectively stacked on a plurality of transparent crystal substrates 11 in one plane 10a of a wafer 10 with the transparent crystal substrates 11, and a roughening step to roughen at least the whole rear surface 11b of a surface 11a to which the semiconductors 12 are respectively stacked in the transparent crystal substrates 11, by blasting with a particulate blasting material 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device configured by forming a gallium nitride compound semiconductor on a transparent crystal substrate such as sapphire, and the semiconductor light emitting device.

Recently, semiconductor light-emitting device has attracted attention has a high energy band gap of the 1.95～6EV, blue, green or purple gallium nitride compound allows the emission outside the semiconductor _{(In x GA Y Al 1-} XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is formed on a transparent crystal substrate such as sapphire.

  However, as pointed out in Patent Document 1, this type of semiconductor light emitting device has a drawback that the external quantum efficiency is deteriorated due to the difference in refractive index between the transparent crystal substrate and the epitaxial film.

  In Patent Document 1, as a method for overcoming the drawback, the uppermost layer of the gallium nitride compound semiconductor is made a non-mirror surface, thereby suppressing multiple reflections on the surface, reducing interference, and efficiently emitting light. The technology to take out is proposed. Specifically, a method for forming a non-mirror surface by growing a gallium nitride compound semiconductor on a sapphire off-substrate shifted by 0.2 to 15 ° from the C-plane (0001) (hereinafter referred to as “first method”). ) And a method of making a non-mirror surface by etching or polishing (hereinafter referred to as “second method”).

Patent Document 2 discloses a step of forming a blast-resistant mask having a pattern that leaves a lattice-like exposed portion on the surface of a semiconductor wafer, and a blast material is blasted from a nozzle onto the semiconductor wafer to form a predetermined substrate on the lattice-like exposed portion. A method for dividing a semiconductor wafer including a step of forming a dividing groove reaching a depth is disclosed.
JP-A-6-291368 JP 2001-284290 A

  However, in the first method, although it is non-specular, the degree of roughening is low, and as described in the same document (paragraph 0013), the emission intensity is about 10% at the best. It is only improving.

  In the second method, as described in the same document (paragraph 0016), the emission intensity is 5% lower than that in the first method. Further, when the non-mirror surface is formed by etching or polishing as in the second method, there is a problem that the reliability of the strength of the semiconductor light emitting element is lowered due to the occurrence of residual stress or cracks. In addition, it is difficult to accurately process the surface of a minute semiconductor light emitting element.

  This invention is made | formed in view of the said situation, and it aims at providing the manufacturing method of the semiconductor light-emitting device which can increase luminescence intensity conventionally, and its semiconductor light-emitting device.

  The invention according to claim 1 for solving the above problem is a method for manufacturing a semiconductor light emitting device, wherein a plurality of semiconductors are provided on one surface of a wafer including a plurality of transparent crystal substrates with respect to the plurality of transparent crystal substrates. Each of the plurality of transparent crystal substrates, and a roughening step of roughening at least the entire back surface of the plurality of transparent crystal substrates with respect to the surface on which the semiconductor is laminated by blasting a blast material. To do.

  In this method, at least the entire back surface with respect to the semiconductor lamination surface of each transparent crystal substrate is a rough surface, so that the interface between the transparent crystal substrate and the outside world is larger than the uppermost layer of the semiconductor that is the target of the conventional non-mirror surface. The reflection due to the difference in refractive index between them can be suppressed, and the degree of roughening of the entire back surface is improved by blasting of the blast material as compared with the conventional first method and second method. Since it becomes higher, the emission intensity can be enhanced than before.

  According to a second aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to the first aspect, the plurality of transparent crystal substrates and the semiconductor are individually divided between the stacking step and the roughening step. Including a groove forming step of forming a dividing groove, wherein the dividing groove is formed in a well shape. Even with this method, the emission intensity can be enhanced as compared with the conventional case.

  According to a third aspect of the present invention, in the method of manufacturing a semiconductor light emitting device according to the first aspect, the plurality of transparent crystal substrates and the semiconductor are individually divided between the stacking step and the roughening step. A groove forming step of forming a dividing groove, wherein the dividing groove is formed in a V-shaped cross section on the back surface of the one surface of the wafer, and each of the plurality of transparent crystal substrates is formed. The angle of the side surface with respect to the surface on which the semiconductor is laminated is set to an acute angle that suppresses reflection of light from the semiconductor layer on the side surface. In this method, the angle at the side surface of each transparent crystal substrate becomes an acute angle that suppresses reflection at the side surface with respect to light from the semiconductor layer, thereby suppressing reflection at the interface between the side surface of the transparent crystal substrate and the outside world. Therefore, the emission intensity can be further enhanced.

  According to a fourth aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to the third aspect, the one surface of the wafer is formed so that the cross-sectional shape of the plurality of transparent crystal substrates is trapezoidal in the groove forming step. The dividing groove is formed in a V-shaped cross section on the back surface of the substrate. Even with this method, the emission intensity can be further enhanced.

  According to a fifth aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to the third or fourth aspect, in the roughening step, the back surface and the side surface of the plurality of transparent crystal substrates with respect to the surface on which the semiconductor is laminated. The entire surface is roughened by blasting of a blast material. In this method, the entire side surface of each transparent crystal substrate is also roughened, so that the emission intensity can be further enhanced.

  A sixth aspect of the present invention is the method of manufacturing a semiconductor light emitting device according to any one of the second to fifth aspects, wherein the dividing grooves are formed by a laser in the groove forming step. Even with this method, the emission intensity can be enhanced as compared with the conventional case, and the generation of residual stress and cracks can be eliminated by forming the dividing groove with a laser.

  According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor light emitting device according to any one of the second to fifth aspects, the dividing groove is formed by a blade in the groove forming step. Even with this method, the emission intensity can be enhanced as compared with the conventional case.

  The invention according to claim 8 is the method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 7, wherein each of the plurality of transparent crystal substrates is provided before blasting of the blast material in the roughening step. A mask for increasing the roughening unevenness difference on at least the entire back surface of the substrate is formed. In this method, since the degree of roughening on at least the entire back surface of each transparent crystal substrate can be increased, the emission intensity can be further enhanced.

  The invention according to claim 9 is the method for manufacturing a semiconductor light emitting device according to any one of claims 1 to 8, wherein the plurality of transparent crystal substrates and the semiconductor are individually divided before or after the roughening step. It is characterized by that. Even with this method, the emission intensity can be enhanced as compared with the conventional case.

  A semiconductor light-emitting device according to a tenth aspect of the invention is manufactured by the method for manufacturing a semiconductor light-emitting device according to any one of the first to ninth aspects. According to the present invention, it is possible to provide a semiconductor light emitting device capable of enhancing the light emission intensity as compared with the prior art.

  According to the present invention, it is possible to enhance the emission intensity as compared with the prior art.

(Embodiment 1)
FIG. 1 is an explanatory diagram of a method for manufacturing a semiconductor light emitting device according to a first embodiment of the present invention, and FIGS. 2 and 3 are explanatory diagrams of steps characteristic to the method for manufacturing a semiconductor light emitting device according to each of the embodiments of the present invention. 4 is an explanatory view of reflection suppression of the semiconductor light emitting element of Embodiment 1, and FIG. 5 is an explanatory view of the effect of the semiconductor light emitting element.

  First, common processes that characterize the method for manufacturing a semiconductor light emitting device of each embodiment according to the present invention will be described. In the method for manufacturing the semiconductor light emitting device of each embodiment, as shown in FIGS. 2 and 3, a plurality of transparent crystal substrates 11 are formed on one surface 10 a of a wafer 10 including a plurality of transparent crystal substrates 11. A step of laminating each of the semiconductors 12, and at least the entire surface of the back surface 11 b with respect to a surface (hereinafter referred to as “semiconductor laminated surface”) 11 a of each of the plurality of transparent crystal substrates 11 on which the semiconductor 12 is laminated, 1 (c) 2) and a roughening step of roughening by blasting.

  Next, the manufacturing method of the semiconductor light emitting device of Embodiment 1 will be described. First, as shown in FIG. For example, sapphire having a thickness of about 330 μm is used for the wafer 10, and each semiconductor 12 is laminated on one surface 10 a thereof. The first surface 10a may be set to the c-plane (0001) as in Patent Document 1, but in the first embodiment, it is set to the a-plane (11-20). The semiconductor 12 is a gallium nitride compound semiconductor formed by metal organic vapor phase epitaxy, and includes, for example, a buffer layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer. The main layer 120 and the electrode 121 are formed. The active layer is not particularly limited because the composition, material, and structure are appropriately changed depending on the application, but it is a single or multiple quantum well structure in which GaN barrier layers and InGaN well layers are alternately stacked. In addition, a desired pattern is formed on the semiconductor layer 2 by photolithography or the like.

  Next, the process proceeds to the groove forming step as shown in FIG. In the first embodiment, before forming the dividing groove 10c (see FIG. 1C), an auxiliary line having a depth of at least 2 μm for assisting the braking of the wafer 10 performed using the dividing groove 10c is provided. The laser 10 is formed in a lattice shape around each semiconductor 12 on one surface 10a of the wafer 10. Specifically, the third harmonic (wavelength 355 nm) of the Nd: YAG laser is irradiated in the orthogonal direction D1 in FIG. For example, the laser is set to an output of 3.0 W, a frequency of 60 kHz, and a scanning speed of 3 mm / second. The auxiliary line is not necessarily formed.

  Thereafter, the dividing grooves 10c are formed on the back surface 10b with respect to the one surface 10a of the wafer 10 so as to have a V-shaped cross section so that the cross-sectional shape of each transparent crystal substrate 11 is trapezoidal. The angle θ of the side surface 11c with respect to the semiconductor laminated surface 11a is set to an acute angle that suppresses reflection of light from the semiconductor layer 12 on the side surface 11c. Here, the dividing groove 11c may be formed by a blade, but in the first embodiment, it is formed by a laser. Specifically, by irradiating the wafer 10 with the third harmonic of the Nd: YAG laser in the inclination direction D2 of FIG. 1B from the back surface 10b side, the angle of the side surface 11c with respect to the semiconductor stacked surface 11a The dividing grooves 10c having an acute angle θ of 60 °, for example, are formed so as to have a lattice shape corresponding to the auxiliary lines when viewed from the back surface 10b side. If the depth of the dividing groove 10c is shallower than 150 μm, damage such as cracks may occur in the crystal when the wafer 10 is divided. Therefore, the dividing groove 10c is set to a depth that is 150 μm or more and does not communicate with the auxiliary line. . The grating pitch may be generally about 300 μm, but is set to about 1 mm, for example, and the laser is set to, for example, an output of 4.0 W, a frequency of 30 kHz, and a scanning speed of 1 mm / second. The back surface 11b of the transparent crystal substrate 11 becomes a light emission observation surface.

  The dividing groove 10c and the auxiliary line may communicate with each other. In this case, an adhesive sheet or the like may be stretched on the back surface 10b or a measure may be taken so that the wafer 10 does not fall apart by suction.

  Next, the process proceeds to a roughening step as shown in FIG. In the first embodiment, the entire back surface 11b and side surface 11c of the transparent crystal substrate 11 with respect to the semiconductor lamination surface 11a are roughened by blasting of the fine particle blast material 2 to form minute irregularities. When a high hardness material such as sapphire having a Mohs hardness of 8-9 is used for the transparent crystal substrate 11, the fine particle blast material 2 is made of alumina, silicon carbide, boron, diamond, etc. in order to make the Vickers hardness 2000 or more. Is desirable. In Embodiment 1, for example, alumina having a particle diameter of 20 μm is used, the blast pressure is set to 0.5 Mpa, and the irradiation time is set to 10 seconds.

  Next, as shown in FIG. 1D, the plurality of transparent crystal substrates 11 and the semiconductors 12 are individually divided using the dividing grooves 10c and the auxiliary lines, so that the semiconductor light emitting element 1 such as a light emitting diode is obtained. Move to the division step to obtain multiple. The division may be performed by using the impact of the fine particle blast material 2 in the roughening step, and when the dividing groove 10c is formed by blast, the fine particle blast material by the blast is roughened. Further, the impact of the fine particle blast material may be used for the division.

Next, features of the semiconductor light emitting device 1 will be described. As shown in FIG. 4A, the light emitted from the active layer of the semiconductor 12 travels from a material having a high refractive index (sapphire) to a material having a small refractive index (external world). In the case of a flat rectangular shape and the back and side surfaces thereof are flat surfaces, a large amount of light is incident on the side surface serving as the interface at a critical angle or less, so that a lot of light is reflected on the side surface. Thereafter, the light reflected from the side surface proceeds from a material having a large refractive index (sapphire) to a small material (external world), and thus a large amount of light is reflected from the back surface as described above. That is, when the light source of the semiconductor 12 is considered as an ideal collection of point light sources, the angles θ ₁ and θ ₂ formed by the light from the point light source with respect to the normal of the side surface or back surface of the transparent crystal substrate 11 are critical. If the angle is equal to or larger than the angle, the light from the point light source is reflected on the side surface or the back surface of the transparent crystal substrate 11. Then, as shown in FIG. 4A, if multiple reflections are reflected at the side and back surfaces of the transparent crystal substrate 11, the light emitted from the active layer is absorbed and attenuated by the GaN-based compound semiconductor layer. The efficiency of taking out becomes worse. For example, if the refractive index of the outside world is 1 and the refractive index of the transparent crystal substrate (sapphire) 11 is 1.77, the critical angle with respect to the normal is about 35 °.

On the other hand, in the semiconductor light emitting device 1, as shown in FIG. 4B, the light emitted from the active layer of the semiconductor 12 will travel from a material having a high refractive index (sapphire) to a material having a small refractive index (outside). However, since the cross section is trapezoidal with an angle θ of 60 °, the angle (incident angle) θ ₃ formed by the light from the point light source with respect to the normal line of the side surface 11c of the transparent crystal substrate 11 becomes small. Since the number of point light sources having an incident angle smaller than the critical angle with respect to the normal line can be increased, reflection of light from the semiconductor layer 12 on the side surface 11c can be suppressed. Moreover, since the side surface 11c is a rough surface, more light from the semiconductor layer 12 can be emitted to the outside. Furthermore, even if a part of the light emitted from the active layer of the semiconductor 12 is reflected by the side surface 11c and arrives at the back surface 11b, the back surface 11b is rough, and thus the incoming light is Can be injected. The angle θ is not limited to the above 60 ° because it depends on the size of the semiconductor light emitting element 1 and the thickness of the transparent crystal substrate 11.

  As a result, in the semiconductor light emitting device 1, as shown in FIG. 5, an optical output “A” with an emission intensity of 7.91 mW is obtained, and an optical output “D” of 4.58 mW in the case of FIG. It is possible to dramatically increase the light extraction efficiency than “. In addition, the light extraction efficiency is higher than the light output “B” of 6.04 mW in the case where only the dividing groove 10c is processed into a V shape.

  As described above, according to the first embodiment, the entire surface of the back surface 11b and the side surface 11c with respect to the semiconductor laminated surface 11a of each transparent crystal substrate 11 is a rough surface, which is larger than the uppermost semiconductor layer that is the target of the conventional non-mirror surface. The reflection due to the difference in refractive index between the transparent crystal substrate 11 and the outside can be suppressed, and the blasting of the fine particle blast material 2 allows the conventional first method and second method to be used. In comparison, since the degree of roughening of the entire back surface 11b and side surface 11c is increased, the emission intensity can be further enhanced as compared with the conventional case.

  Further, the angle of the side surface 11c of each transparent crystal substrate 11 becomes an acute angle that suppresses reflection at the side surface 11c with respect to light from the semiconductor laminated surface 11a, and the interface between the side surface 11c of the transparent crystal substrate 11 and the outside world. Therefore, the light emission intensity can be further enhanced.

  Furthermore, by forming the dividing groove 10c with a laser, the occurrence of residual stress and cracks can be eliminated. In addition, by spraying the fine particle blasting material 2, it is possible to remove dirt generated during laser processing.

  In the first embodiment, the transparent crystal substrate 11 has a trapezoidal cross section, but may be hemispherical. In the case of this structure, the extraction efficiency of light emitted from the point light source can be maximized.

  In order to form the dividing groove 10c, the wafer 10 is irradiated with the third harmonic of the Nd: YAG laser. However, the present invention is not limited to this, and the wavelength is 532 nm. 2nd harmonic, 4th harmonic of wavelength 266nm or 5th harmonic of wavelength 213nm, or an ultrashort pulse laser with an extremely short pulse width of 1ps or less. Good. In the case of an ultrashort pulse laser, it is possible to process with a Ti: sapphire laser (wavelength 800 nm) or an Nd: YAG laser (wavelength 1064 nm), which is a near infrared laser, as a laser wavelength.

  In addition, although the output of the laser for forming the dividing groove 10c is 4.0 W, the present invention is not limited to this (in each of the following embodiments), and if it is smaller than 2.0 W, the dividing groove is formed to a required depth. If it cannot be formed and is larger than 20 W, the crystal of the transparent crystal substrate 11 is damaged by heat, so it is desirable to set it within a range of about 2.0 to 20 W.

  Further, the frequency of the laser for forming the dividing groove 10c is exemplified as 30 kHz. However, the frequency is not limited to this (in each of the following embodiments), and the dividing groove may be formed to a required depth if it is lower than 5 kHz. If it is higher than 60 kHz, the crystal of the transparent crystal substrate 11 is damaged by heat, so it is desirable to set it within a range of about 5 to 60 kHz.

  In addition, the scanning speed of the laser for forming the dividing groove 10c is 1 mm / second, but is not limited thereto (also in the following embodiments). If it is slower than 1 mm / second, the transparent crystal substrate 11 is heated by heat. The crystal is damaged and the processing time becomes longer. On the other hand, if it is faster than about 20 mm / second, the dividing groove cannot be formed to the required depth, so it is set within the range of about 1 to 20 mm / second. Is desirable.

  Further, the particle diameter of the fine particle blast material 2 is exemplified as 20 μm, but is not limited thereto (also in the following embodiments). If the particle size is smaller than 10 μm, the degree of roughening unevenness is reduced, and if larger than 100 μm. Since the impact damage to the crystal of the transparent crystal substrate 11 becomes large, it is desirable to set within a range of about 10 to 100 μm. At this time, the particle size of the fine particle blasting material 2 is proportional to the degree of roughening of the surface, so the degree of unevenness increases as the particle size increases.

  Further, the blast pressure of the fine particle blast material 2 is exemplified as 0.5 Mpa. However, the blast pressure is not limited to this (in each of the following embodiments), and if it is lower than 0.3 Mpa, the processing speed is slow and higher than 0.7 MPa. In this case, since the impact damage to the crystal of the transparent crystal substrate 11 becomes large, it is desirable to set it within a range of about 0.3 to 0.7 MPa.

  Further, although the irradiation time of the fine particle blast material 2 is exemplified as 10 seconds, it is not limited thereto (also in the following embodiments), and if it is shorter than 5 seconds, the degree of unevenness of roughening becomes low, and 20 If it is longer than 2 seconds, impact damage to the crystal of the transparent crystal substrate 11 becomes large, so it is desirable to set it within a range of about 5 to 20 seconds.

(Embodiment 2)
FIG. 6 is an explanatory view of the method for manufacturing the semiconductor light emitting device of the second embodiment according to the present invention.

  As shown in FIG. 6, the manufacturing method of the semiconductor light emitting device of the second embodiment is characterized in that the dividing grooves 10c are formed in a well (straight) shape in the groove forming step as a difference from the first embodiment. To do. In other words, as shown in FIG. 6B, when the groove forming process is started, auxiliary lines are formed in the same manner as in the first embodiment, and thereafter, with respect to the wafer 10 from the back surface 10b side in the vertical direction D3 in FIG. By irradiating the third harmonic of the Nd: YAG laser, the well-shaped dividing groove 10c (see FIG. 6C) is formed in a lattice shape corresponding to the auxiliary line when viewed from the back surface 10b side. To form. For example, the laser is set to an output of 6.0 W, a frequency of 30 kHz, and a scanning speed of 1 mm / second. However, in the roughening step, as shown in FIGS. 6C and 6D, the entire surface of the back surface 11 b is roughened by blasting of the fine particle blast material 2.

  As described above, according to the second embodiment, as shown in FIG. 5, the light output “C” having the emission intensity of 5.97 mW is obtained, and the light output of 4.58 mW in the case of FIG. The light extraction efficiency can be increased more than “D”.

  In the second embodiment, the entire surface of the back surface 11b is roughened by blasting of the fine particle blast material 2. However, the present invention is not limited to this, and the entire surface of the back surface 11b and the side surface 11c is not limited to this. In order to roughen the surface by blasting the fine particle blast material 2, the fine particle blast material 2 may be sprayed to the side surface 11c not only vertically downward but obliquely downward. Thus, if the entire surface of the back surface 11b and the side surface 11c is roughened by blasting of the fine particle blast material 2, it can be expected that the light extraction efficiency is higher than the light output “C” shown in FIG.

  In contrast, in the first embodiment, the entire surface of the back surface 11b and the side surface 11c is roughened by the blasting of the fine particle blast material 2, but the entire surface of the back surface 11b is formed in the fine particle blast material 2 as in the second embodiment. The surface may be roughened by blasting. Even in this case, the light extraction efficiency is worse than that of the first embodiment due to the relationship between the light outputs “C” and “D” in FIG. 5, but the light output is higher than the light output “D” in the case of FIG. The take-out efficiency can be increased.

(Embodiment 3)
FIG. 7 is an explanatory view of the method for manufacturing the semiconductor light emitting device of the third embodiment according to the present invention.

  As shown in FIG. 7, the manufacturing method of the semiconductor light emitting device of Embodiment 3 differs from Embodiments 1 and 2 (Embodiment 1 in the example of FIG. 7) as shown in FIG. It moves to a division | segmentation process before the roughening process shown in FIG.

  In the third embodiment, after the same stacking process as in the first embodiment, the process proceeds to a dividing process, in which the plurality of transparent crystal substrates 11 and the semiconductors 12 are individually divided, and each rectangular semiconductor light emitting element 1 in the middle of manufacture is obtained. By fixing with a device 3 capable of chucking by vacuum or the like as shown in FIG. 7A and irradiating a third harmonic of the Nd: YAG laser in the tilt direction D2, the side surface 11c of the semiconductor stacked surface 11a is irradiated. The angle θ is set to an acute angle of 60 °, for example.

  According to the third embodiment, as compared with the first and second embodiments in which the side surface is formed by the dividing groove 10c, the side surface 11c is directly formed by the laser, so that the entire side surface 11c can be set at a desired angle with high accuracy. . The shape of the semiconductor light emitting element 1 is not limited to the shape shown in FIG.

  In each of the above embodiments, in order to remove the remaining fine particle blasting material 2, ultrasonic cleaning using a solvent, cleaning with a water jet, or chemical etching with acid or alkali may be performed.

  In the first embodiment, the laser is used to form the dividing groove 10c. However, the dividing groove having a V-shaped cross section using the blade 4 having a blade angle of 60 ° as shown in FIG. 8A. 10c may be formed. Similarly, in the second embodiment, a laser is used to form the dividing groove 10c. However, a well-shaped dividing groove 10c is formed using a blade 5 having a blade angle of 90 ° as shown in FIG. 8B. May be formed.

  Further, in the first and second embodiments, the semiconductor laminated surface in the transparent crystal substrate 11 is completely braked when the dividing groove 10c is formed, and then each semiconductor light emitting element 1 being manufactured is fixed by, for example, the device 3. You may make it inject | pour the fine particle blast material 2 to the back surface 11b at least with respect to 11a.

  Furthermore, as shown in FIG. 9, before the blasting of the fine particle blast material 2 in the roughening step, in order to increase the unevenness difference of the roughening on the entire surface of at least the back surface 11b of each of the plurality of transparent crystal substrates 11, For example, a mask (blast mask) 6 having a lattice pitch of 100 μm may be formed. In this method, since the degree of roughening on the entire surface of at least the back surface 11b of each transparent crystal substrate 11 can be increased, the emission intensity can be further enhanced.

It is explanatory drawing of the manufacturing method of the semiconductor light-emitting device of Embodiment 1 by this invention. It is explanatory drawing of each process characterized by the manufacturing method of the semiconductor light-emitting device of each embodiment by this invention. It is explanatory drawing of each process characterized by the manufacturing method of the semiconductor light-emitting device of each embodiment by this invention. 6 is an explanatory diagram of reflection suppression of the semiconductor light-emitting element of Embodiment 1. FIG. It is explanatory drawing of the effect of a semiconductor light-emitting device. It is explanatory drawing of the manufacturing method of the semiconductor light-emitting device of Embodiment 2 by this invention. It is explanatory drawing of the manufacturing method of the semiconductor light-emitting device of Embodiment 3 by this invention. It is explanatory drawing of the modification of Embodiment 1,2. It is explanatory drawing of the modification of Embodiment 1-3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 10 Wafer 10a One surface 10b Back surface 10c Dividing groove 11 Transparent crystal substrate 11a Semiconductor laminated surface 11b Back surface 11c Side surface 12 Semiconductor 120 Main layer 121 Electrode 2 Fine particle blast material

Claims (10)

  A laminating step of laminating a plurality of semiconductors on the plurality of transparent crystal substrates on one surface of a wafer including a plurality of transparent crystal substrates, and a surface on which the semiconductors are laminated in each of the plurality of transparent crystal substrates A method of manufacturing a semiconductor light emitting device, comprising: a roughening step of roughening at least the entire back surface by blasting of a blast material.   A groove forming step for forming a dividing groove for individually dividing the plurality of transparent crystal substrates and the semiconductor between the laminating step and the roughening step; 2. The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the groove is formed in a well shape.   A groove forming step for forming a dividing groove for dividing the plurality of transparent crystal substrates and the semiconductor individually between the laminating step and the roughening step, and in the groove forming step, The dividing groove is formed in a V-shaped cross section on the back surface with respect to one surface, and the angle of the side surface with respect to the surface on which the semiconductor is laminated in each of the plurality of transparent crystal substrates is set with respect to the light from the semiconductor layer. 2. The method of manufacturing a semiconductor light-emitting element according to claim 1, wherein an acute angle is used to suppress reflection at the side surface.   In the groove forming step, the dividing grooves are formed in a V-shaped cross section on the back surface of one surface of the wafer so that the cross-sectional shapes of the plurality of transparent crystal substrates are trapezoidal. A method for manufacturing a semiconductor light emitting device according to claim 3.   5. The roughening step comprises roughening the entire back surface and side surfaces of each of the plurality of transparent crystal substrates with respect to the surface on which the semiconductor is laminated by blasting a blast material. The manufacturing method of the semiconductor light-emitting device in any one of.   6. The method of manufacturing a semiconductor light emitting element according to claim 2, wherein the dividing groove is formed by a laser in the groove forming step.   6. The method of manufacturing a semiconductor light emitting element according to claim 2, wherein the dividing groove is formed by a blade in the groove forming step.   Before the blasting of the blasting material in the roughening step, a mask for increasing the unevenness of roughening on at least the entire back surface of each of the plurality of transparent crystal substrates is formed. Item 8. A method for producing a semiconductor light emitting device according to any one of Items 1 to 7.   9. The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the plurality of transparent crystal substrates and the semiconductor are individually divided before or after the roughening step.   A semiconductor light emitting device manufactured by the method for manufacturing a semiconductor light emitting device according to claim 1.

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