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JP2005146077A - Fluoropolyimide - Google Patents

Fluoropolyimide Download PDF

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Publication number
JP2005146077A
JP2005146077A JP2003383941A JP2003383941A JP2005146077A JP 2005146077 A JP2005146077 A JP 2005146077A JP 2003383941 A JP2003383941 A JP 2003383941A JP 2003383941 A JP2003383941 A JP 2003383941A JP 2005146077 A JP2005146077 A JP 2005146077A
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Prior art keywords
polyamic acid
present
dianhydride
polyimide
composition
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Inventor
Seiichi Hayashi
誠一 林
Senka Amishima
千華 網島
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Nippon Kayaku Co Ltd
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Nippon Kayaku Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a polyimide having low dielectric constant as well as excellent properties inherent in polyimides. <P>SOLUTION: A polyamic acid is provided, being obtained by reaction between 2,2-bis(4-aminophenyl)-hexadecafluorooctane and an aromatic tetrabasic acid dianhydride. The polyimide in filmy form is obtained by dissolving the polyamic acid in a solvent followed by coating a base with the resultant solution and then drying and heating. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、低誘電率で機械的、熱的及び電気的特性に優れたポリイミドに関する。   The present invention relates to a polyimide having a low dielectric constant and excellent mechanical, thermal and electrical properties.

従来、ポリイミドはその優れた耐熱性に加え、機械物性、耐薬品性、難燃性、電気特性等の点において優れた特性を有しているために、成形材料、複合材料、電気・電子部品等の分野において幅広く用いられている。近年の電気・電子部品分野においては、マイクロエレクトロニクス化の発達が著しい。特に、大型コンピュータでは多層回路基板の採用等により信号の高速伝送が不可欠となるが、基板材料の誘電率が大きいと信号の伝送に遅延が生じ高速化の障害となる。ポリイミドは多層配線構造の層間絶縁膜に用いられるが、これらの理由から従来ポリイミドが有する優れた絶縁性に加えて低誘電率化の必要性がクローズアップされてきている。
特開平05−98002号公報 特開平06−340808号公報 特開平11−35684号公報
Conventionally, polyimide has excellent properties in terms of mechanical properties, chemical resistance, flame retardancy, electrical properties, etc. in addition to its excellent heat resistance, so molding materials, composite materials, electrical / electronic parts, etc. It is widely used in such fields. In recent years, the development of microelectronics has been remarkable in the field of electrical and electronic components. In particular, high-speed transmission of signals is indispensable for large computers due to the use of multilayer circuit boards, etc. However, if the dielectric constant of the substrate material is large, signal transmission is delayed and becomes an obstacle to speeding up. Polyimide is used for an interlayer insulating film having a multilayer wiring structure. For these reasons, the necessity of lowering the dielectric constant has been highlighted in addition to the excellent insulating properties of conventional polyimides.
JP 05-98002 A Japanese Patent Laid-Open No. 06-340808 Japanese Patent Laid-Open No. 11-35684

本発明の目的は、ポリイミドが本来有する優れた特性に加えて、低誘電率であるポリイミドを提供することである。   An object of the present invention is to provide a polyimide having a low dielectric constant in addition to the excellent properties inherent in polyimide.

本発明者らは、上記課題を解決するため、鋭意研究した結果、本発明を完成した。即ち本発明は   The inventors of the present invention have completed the present invention as a result of intensive studies in order to solve the above problems. That is, the present invention

(1)式1 (1) Formula 1

Figure 2005146077
Figure 2005146077

で表されるアミン成分と芳香族四塩基酸二無水物とを反応させて得られるポリアミド酸、
(2)上記(1)記載のポリアミド酸及び溶媒を含有する組成物、
(3)上記(1)記載のポリアミド酸をイミド化してなるポリイミド、
(4)上記請求項2記載の組成物を基材に塗布し、加熱して得られるフィルム
に関する。
A polyamic acid obtained by reacting an amine component represented by the following with an aromatic tetrabasic acid dianhydride,
(2) A composition containing the polyamic acid according to (1) and a solvent,
(3) a polyimide formed by imidizing the polyamic acid described in (1) above,
(4) It is related with the film obtained by apply | coating the composition of the said Claim 2 to a base material, and heating.

本発明のポリアミド酸から得られる本発明のポリイミドは、ポリイミドが本来有する優れた特性に加えて、低誘電率であり、多層配線構造の層間絶縁材料として極めて有用で
ある。
The polyimide of the present invention obtained from the polyamic acid of the present invention has a low dielectric constant in addition to the excellent properties inherent in polyimide, and is extremely useful as an interlayer insulating material for a multilayer wiring structure.

本発明のポリアミド酸は、上記式(1)で表されるアミン成分と、芳香族四塩基酸二無水物とを反応させ得ることができる。また、本発明のポリアミド酸を製造する際には、式(1)の化合物の他にアミン成分として、他のジアミンを併用してもよい。他の芳香族ジアミンとしては、4,4’−ジアミノジフェニルプロパン、3,4’−ジアミノジフェニルプロパン等のジアミノジフェニルプロパン類;4,4’−[1,3−フェニレンビス(1−メチリデン)]ビスアニリン、4,4’−[1,4−フェニレンビス(1−メチリデン)]ビスアニリン等のビスアニリン類;p−フェニレンジアミン、m−フェニレンジアミン、クロル−p−フェニレンジアミン等のフェニレンジアミン類;4,4’−ジアミノジフェニルエーテル、2,4’−ジアミノジフェニルエーテル、3,4’−ジアミノジフェニルエーテル等のジアミノジフェニルエーテル類;4,4’−ジアミノジフェニルメタン、3,4’−ジアミノジフェニルメタン、2,4’−ジアミノジフェニルメタン等のジアミノジフェニルメタン類;4,4’−ジアミノジフェニルスルフィド、3,4’−ジアミノジフェニルスルフィド等のジアミノジフェニルスルフィド類;4,4’−ジアミノジフェニルスルフォン、3,4’−ジアミノジフェニルスルフォン等のジアミノジフェニルスルフォン類;1,5−ジアミノナフタレン;等のジアミノナフタレン類;3,3’−ジメチルベンジジン、3,3’,5,5’−テトラメチルベンジジン、3,3’−ジクロロベンジジン、2,2’−ジクロロベンジジン、3,3’,5,5’−テトラクロロベンジジン等のベンジジン類;2,4−ビス(β−アミノ−t−ブチル)トルエン、ビス(p−β−アミノ−t−ブチルフェニル)エーテル等を挙げることができる。他のジアミン成分を併用する場合、アミン成分中に式(1)の化合物が占める割合は、70モル%以上が好ましい。   The polyamic acid of the present invention can react an amine component represented by the above formula (1) with an aromatic tetrabasic acid dianhydride. Moreover, when manufacturing the polyamic acid of this invention, you may use together other diamine as an amine component other than the compound of Formula (1). Other aromatic diamines include 4,4′-diaminodiphenylpropane, diaminodiphenylpropanes such as 3,4′-diaminodiphenylpropane; 4,4 ′-[1,3-phenylenebis (1-methylidene)] Bisanilines such as bisaniline and 4,4 ′-[1,4-phenylenebis (1-methylidene)] bisaniline; phenylenediamines such as p-phenylenediamine, m-phenylenediamine and chloro-p-phenylenediamine; Diaminodiphenyl ethers such as 4′-diaminodiphenyl ether, 2,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether; 4,4′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 2,4′-diaminodiphenylmethane Diaminodipheny Methanes; diaminodiphenyl sulfides such as 4,4′-diaminodiphenyl sulfide and 3,4′-diaminodiphenyl sulfide; diaminodiphenyl sulfones such as 4,4′-diaminodiphenyl sulfone and 3,4′-diaminodiphenyl sulfone Diaminonaphthalenes such as 1,5-diaminonaphthalene; 3,3′-dimethylbenzidine, 3,3 ′, 5,5′-tetramethylbenzidine, 3,3′-dichlorobenzidine, 2,2′-dichloro; Benzidines such as benzidine and 3,3 ′, 5,5′-tetrachlorobenzidine; 2,4-bis (β-amino-t-butyl) toluene, bis (p-β-amino-t-butylphenyl) ether Etc. can be mentioned. When another diamine component is used in combination, the proportion of the compound of formula (1) in the amine component is preferably 70 mol% or more.

芳香族四塩基酸二無水物としては、芳香族環に4つのカルボキシル基が結合した構造の化合物の二無水物であれば特に制限はなく、例えば2,3,3’,4’−ビフェニルテトラカルボン酸二無水化物、ピロメリット酸二無水化物;2,3,6,7−ナフタレンテトラカルボン酸二無水化物、1,4,5,8−ナフタレンテトラカルボン酸二無水化物、1,2,5,6−ナフタレンテトラカルボン酸二無水化物等のナフタレンテトラカルボン酸二無水化物;、3,3’,4,4’−ビフェニルテトラカルボン酸二無水化物、2,2’,3,3’−ビフェニルテトラカルボン酸二無水化物等のビフェニルテトラカルボン酸二無水化物;2,3,4,5−チオフェンテトラカルボン酸二無水化物、2,2−ビス(3,4−ジカルボキシフェニル)プロパン酸二無水化物、2,2−ビス(3,4−ジカルボキシフェニル)ヘキサフルオロプロパン酸二無水化物、2,5,6,2',5',6'- ヘキサフルオロ- 3,3’,4,4’−ビフェニルテトラカルボン酸二無水化物,ビス(3,4−ジカルボキシフェニル)スルフォン酸二無水化物、3,4,9,10−ペリレンテトラカルボン酸二無水化物等を挙げることができ、ビフェニルテトラカルボン酸二無水化物が好ましい。これら芳香族四塩基酸二無水物は単独で、もしくは2種以上を併用することができる。本発明において、前記芳香族四塩基酸二無水物とアミン成分との使用割合は、前者1モルに対して後者が通常0.95〜1.05モル、好ましくは0.98〜1.03モルで、この範囲を外れると、モル比のバランスがくずれたことに起因する特性の低下を招くことがおそれがあり、また、粘度にも影響し、ハンドリングを困難にする場合がある。   The aromatic tetrabasic acid dianhydride is not particularly limited as long as it is a dianhydride of a compound having a structure in which four carboxyl groups are bonded to an aromatic ring. For example, 2,3,3 ′, 4′-biphenyltetra Carboxylic dianhydride, pyromellitic dianhydride; 2,3,6,7-naphthalene tetracarboxylic dianhydride, 1,4,5,8-naphthalene tetracarboxylic dianhydride, 1,2,5 Naphthalenetetracarboxylic dianhydride such as 1,6-naphthalenetetracarboxylic dianhydride; 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyl Biphenyltetracarboxylic dianhydride such as tetracarboxylic dianhydride; 2,3,4,5-thiophenetetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) Lopanic acid dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropanoic acid dianhydride, 2,5,6,2 ′, 5 ′, 6′-hexafluoro-3,3 ′ , 4,4′-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) sulfonic acid dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, and the like. Biphenyltetracarboxylic dianhydride is preferred. These aromatic tetrabasic acid dianhydrides can be used alone or in combination of two or more. In the present invention, the use ratio of the aromatic tetrabasic acid dianhydride and the amine component is usually 0.95 to 1.05 mol, preferably 0.98 to 1.03 mol, with respect to 1 mol of the former. If it is out of this range, there is a possibility that the characteristics are deteriorated due to the loss of the balance of the molar ratio, and the viscosity is also affected, which may make handling difficult.

本発明のポリアミド酸は、例えば以下のようにして調製することができる。
まず、芳香族四塩基酸二無水物と式(1)のアミン成分を室温で溶剤中で混合し、40〜80℃で、8〜15時間撹拌しながら反応させる。得られたポリアミド酸を含む溶液から溶媒を除去すれば本発明のポリアミド酸を得ることができる。また、通常この溶液を、そのまま本発明フィルムを得るためのワニスとして使用する場合、この溶液を室温まで冷却後、窒素加圧下、PTFE(ポリ(テトラフルオロエチレン))メンブラン等のフィルタで濾過して、所望のワニスを得る。
The polyamic acid of the present invention can be prepared, for example, as follows.
First, an aromatic tetrabasic acid dianhydride and an amine component of the formula (1) are mixed in a solvent at room temperature and reacted at 40 to 80 ° C. with stirring for 8 to 15 hours. The polyamic acid of the present invention can be obtained by removing the solvent from the obtained polyamic acid-containing solution. In addition, when this solution is usually used as it is as a varnish for obtaining the film of the present invention, the solution is cooled to room temperature and then filtered through a filter such as a PTFE (poly (tetrafluoroethylene)) membrane under nitrogen pressure. To obtain the desired varnish.

ポリアミド酸を製造する際の溶剤としては、N−メチル−2−ピロリドン、N,N−ジメチルアセトアミド、N,N-ジメチルホルムアミド、ジメチルスルホキシド、ジメチルスルホン、スルホラン、テトラメチレンスルホキシド、ジメチルイミダゾリジノン、ヘキサメチルホスホルアミド等の非プロトン性極性溶媒が適している。これらの溶媒は単独あるいは二種以上混合して用いることが出来る。溶媒の使用量は、反応が進行する程度であれば特に制限はないが、ワニスとしての用途を考慮に入れると、下記する組成物中の固形分濃度が通常2〜50重量%程度となるように用いるのがよい。   As the solvent for producing the polyamic acid, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, dimethyl sulfoxide, dimethyl sulfone, sulfolane, tetramethylene sulfoxide, dimethylimidazolidinone, Aprotic polar solvents such as hexamethylphosphoramide are suitable. These solvents can be used alone or in combination of two or more. The amount of the solvent used is not particularly limited as long as the reaction proceeds, but when considering the use as a varnish, the solid content concentration in the composition described below is usually about 2 to 50% by weight. It is good to use for.

また、本発明のポリアミド酸組成物は、本発明のポリアミド酸と溶剤を含有する。溶剤としては、前記溶剤を使用することができる。本発明のポリアミド酸組成物は、種々の添加剤を加えることができ、例えば、有機又は無機顔料、染料、レベリング剤、カブリ防止剤、退色防止剤、ハレーション防止剤、蛍光増白剤、界面活性剤、可塑剤、難燃剤、酸化防止剤、充填剤、静電防止剤、消泡剤、流動調整剤、γーブチロラクトンとピリジン、γーバレロラクトンとピリジン等のイミド化触媒、安息香酸、m−ヒドロキシ安息香酸、p−ヒドロキシフェニル酢酸、p−ヒドロキシベンゼンスルホン酸、イソキノリン等のイミド化促進剤、トルエン、オルトジクロロベンゼン、ニトロベンゼン、無水酢酸/ピリジン等の(共沸)脱水剤、遅延剤、光安定剤、光触媒、防かび剤、抗菌剤、低誘電体、導電体、磁性体、層状鉱物や、熱分解性化合物等が挙げられ、特に触媒(及びイミド化促進剤)や脱水剤を添加しておけば、後のイミド化が促進され、比較的温和な条件でポリイミドフィルムが得られる。
本発明の組成物は上記各成分を所定の割合で均一に混合して得ることができる。また、本発明のポリアミド酸を得る際の溶液をそのまま本発明の組成物とすることができる。
The polyamic acid composition of the present invention contains the polyamic acid of the present invention and a solvent. As the solvent, the above solvent can be used. Various additives can be added to the polyamic acid composition of the present invention, for example, organic or inorganic pigments, dyes, leveling agents, antifoggants, antifading agents, antihalation agents, fluorescent whitening agents, surface active agents. Agents, plasticizers, flame retardants, antioxidants, fillers, antistatic agents, antifoaming agents, flow regulators, imidation catalysts such as γ-butyrolactone and pyridine, γ-valerolactone and pyridine, benzoic acid, m-hydroxy Imido accelerators such as benzoic acid, p-hydroxyphenylacetic acid, p-hydroxybenzenesulfonic acid, isoquinoline, (azeotropic) dehydrating agents such as toluene, orthodichlorobenzene, nitrobenzene, acetic anhydride / pyridine, retarder, light stability Agents, photocatalysts, fungicides, antibacterial agents, low dielectric materials, conductors, magnetic materials, layered minerals, thermal decomposable compounds, etc., especially catalysts (and imides) If an accelerating agent) or a dehydrating agent is added, subsequent imidization is promoted, and a polyimide film can be obtained under relatively mild conditions.
The composition of the present invention can be obtained by uniformly mixing the above components at a predetermined ratio. Moreover, the solution at the time of obtaining the polyamic acid of this invention can be made into the composition of this invention as it is.

本発明のフィルムは、所望のイミドフィルム厚、通常10〜30μmになるように基板に本発明の組成物(ワニス)を塗布し、50〜150℃で5〜180分間乾燥してポリアミド酸フィルムを作製し、その後、窒素気流下200〜500℃で0.5〜5時間熱的処理することによりイミド化し、本発明のポリイミドとすることにより得られる。
基板は、ガラス基板、銅箔、アルミ箔、ステンレススチール基板、ドラムや、エンドレスベルト等、上記熱処理に耐えうるものであれば特に制限はないが、銅箔を用いることで片面銅張積層板が得られる。
こうして得られた本発明のフィルム中のフッ素含有量は平均20〜40重量%となり低誘電である。
The film of the present invention is coated with the composition (varnish) of the present invention on a substrate so as to have a desired imide film thickness, usually 10-30 μm, and dried at 50-150 ° C. for 5-180 minutes to form a polyamic acid film. It is prepared and then imidized by thermal treatment at 200 to 500 ° C. for 0.5 to 5 hours under a nitrogen stream to obtain the polyimide of the present invention.
The substrate is not particularly limited as long as it can withstand the above heat treatment, such as a glass substrate, copper foil, aluminum foil, stainless steel substrate, drum, endless belt, etc. can get.
The thus obtained film of the present invention has an average fluorine content of 20 to 40% by weight and a low dielectric constant.

本発明のフィルムは、耐熱性に加え、機械物性、耐薬品性、難燃性、電気特性等に優れた特性を有しているために電気・電子部品等の分野において幅広く用いることが可能である。具体的には多層配線構造の層間絶縁膜などに用いることができる。   The film of the present invention has excellent mechanical properties, chemical resistance, flame retardancy, electrical characteristics, etc. in addition to heat resistance, so it can be widely used in the fields of electrical and electronic parts. is there. Specifically, it can be used for an interlayer insulating film having a multilayer wiring structure.

以下本発明を実施例により更に具体的に説明するが、本発明がこれらの実施例に限定されるものではない。   EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.

実施例1
乾燥窒素ガス導入管、冷却器、温度計、撹拌機を備えた四つフラスコに3,3’、4,4’−ビフェニルテトラカルボン酸ニ無水物(以下BPDA)6.74gと2,2−ビス(4−アミノフェニル)−ヘキサデカフルオロオクタン(以下APFOと略す)13.30gとを粉末状態でよくかき混ぜ、そこにN,N−ジメチルアセトアミド(以下DMAc)80gを加え、室温で17時間、40〜45℃で8時間撹拌した。反応後、放冷し室温になったら、窒素加圧下、ポリ(テトラフルオロエチレン)(以下PTFE)メンブラン(3μm)で濾過し、固形分濃度20重量%のほとんど無色の透明ワニス(本発明の組成物)を得た。
Example 1
In a four flask equipped with a dry nitrogen gas inlet tube, a cooler, a thermometer, and a stirrer, 6.74 g of 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride (hereinafter referred to as BPDA) and 2,2- Bis (4-aminophenyl) -hexadecafluorooctane (hereinafter abbreviated as APFO) 13.30 g is thoroughly mixed in a powder state, and 80 g of N, N-dimethylacetamide (hereinafter referred to as DMAc) is added thereto, and at room temperature for 17 hours, The mixture was stirred at 40 to 45 ° C. for 8 hours. After the reaction, the mixture is allowed to cool to room temperature, filtered through a poly (tetrafluoroethylene) (hereinafter referred to as PTFE) membrane (3 μm) under nitrogen pressure, and an almost colorless transparent varnish having a solid concentration of 20% by weight (the composition of the present invention). Product).

実施例2
乾燥窒素ガス導入管、冷却器、温度計、撹拌機を備えた四つフラスコにBPDA6.70gとAPFO13.30gとを粉末状態でよくかき混ぜ、そこにDMAc56gとNーメチルー2−ピロリドン(以下NMP)24gを加え、40〜45℃で8時間撹拌した。反応後、放冷し室温になったら、窒素加圧下、PTFEメンブラン(3μm)で濾過し、固形分濃度20重量%のほとんど無色の透明ワニス(本発明の組成物)を得た。
Example 2
BPDA 6.70 g and APFO 13.30 g are well mixed in a powdered state in a four flask equipped with a dry nitrogen gas inlet tube, a cooler, a thermometer, and a stirrer, and DMAc 56 g and N-methyl-2-pyrrolidone (hereinafter referred to as NMP) 24 g. And stirred at 40-45 ° C. for 8 hours. After the reaction, the mixture was allowed to cool to room temperature, and filtered through a PTFE membrane (3 μm) under nitrogen pressure to obtain an almost colorless transparent varnish (composition of the present invention) having a solid concentration of 20% by weight.

実施例3
乾燥窒素ガス導入管、冷却器、温度計、撹拌機を備えた四つフラスコにAPFO19.95gを量りとり、DMAC49gとNMP21gを加えて溶解しておき、そこにBPDA10.05gを加え、70〜75℃で15時間攪拌した。反応後、放冷し、室温になったら窒素加圧下、PTFEメンブラン(3μm)で濾過し、固形分濃度30重量%のオレンジ色ワニス(本発明の組成物)を得た。粘度(25℃):16mPa・s
Example 3
APFO 19.95 g was weighed into a four flask equipped with a dry nitrogen gas inlet tube, a cooler, a thermometer, and a stirrer, 49 g of DMAC and 21 g of NMP were added and dissolved, and 10.05 g of BPDA was added thereto, and 70-75 Stir at 15 ° C. for 15 hours. After the reaction, the mixture was allowed to cool, and when it reached room temperature, it was filtered through a PTFE membrane (3 μm) under nitrogen pressure to obtain an orange varnish (composition of the present invention) having a solid concentration of 30% by weight. Viscosity (25 ° C.): 16 mPa · s

実施例4
乾燥窒素ガス導入管、冷却器、温度計、撹拌機を備えた四つフラスコにAPFO21.84gを量りとり、をDMAC49gとNMP21gに溶解しておき、そこにBPDAの代わりにピロメリット酸二無水物(以下PMDA)を8.16g加え、70〜80℃で21時間攪拌して、茶褐色のワニスを得た。放冷し室温になったら、窒素加圧下、PTFEメンブラン(3μm)で濾過し、固形分濃度30重量%の透明ワニス(本発明の組成物)を得た。粘度(25℃):13mPa・s
Example 4
Weigh 21.84 g of APFO in a four-flask equipped with a dry nitrogen gas inlet tube, a cooler, a thermometer, and a stirrer and dissolve it in 49 g of DMAC and 21 g of NMP. Then, pyromellitic dianhydride is used instead of BPDA. (Hereinafter referred to as PMDA) 8.16 g was added and stirred at 70 to 80 ° C. for 21 hours to obtain a brown varnish. When it was allowed to cool to room temperature, it was filtered through a PTFE membrane (3 μm) under nitrogen pressure to obtain a transparent varnish (composition of the present invention) having a solid content concentration of 30% by weight. Viscosity (25 ° C.): 13 mPa · s

実施例5
乾燥窒素ガス導入管、冷却器、温度計、撹拌機を備えた四つフラスコに1,4,5,8-ナフタレンテトラカルボン酸ニ無水物(以下NTDA)6.29gとAFPO13.71gとよく混ぜ、そこにDMAc56gとNMP24gを加え、30〜50℃で15時間撹拌した。不溶解分が残るので、さらにNMP33.3gを加え、60℃で15時間反応させた。反応後、放冷し室温になったら、窒素加圧下、PTFEメンブラン(3μm)で濾過し、固形分濃度15重量%の赤褐色の透明ワニス(本発明の組成物)を得た。
Example 5
Mix well with 6.29 g of 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTDA) and 13.71 g of AFPO in a four-flask equipped with a dry nitrogen gas inlet tube, a cooler, a thermometer, and a stirrer. Then, 56 g of DMAc and 24 g of NMP were added thereto, and the mixture was stirred at 30 to 50 ° C. for 15 hours. Since insoluble matter remained, 33.3 g of NMP was further added and reacted at 60 ° C. for 15 hours. After the reaction, the mixture was allowed to cool to room temperature, and filtered through a PTFE membrane (3 μm) under nitrogen pressure to obtain a reddish brown transparent varnish (composition of the present invention) having a solid concentration of 15% by weight.

Claims (5)

下記式(1)
Figure 2005146077
で表されるアミンと芳香族四塩基酸二無水物とを反応させて得られるポリアミド酸。
Following formula (1)
Figure 2005146077
A polyamic acid obtained by reacting an amine represented by the following formula with an aromatic tetrabasic dianhydride.
請求項1のポリアミド酸及び溶媒を含有する組成物。 A composition comprising the polyamic acid of claim 1 and a solvent. 請求項1記載のポリアミド酸をイミド化してなるポリイミド。 A polyimide obtained by imidizing the polyamic acid according to claim 1. 請求項2記載の組成物を基材に塗布し、加熱して得られるフィルム。 The film obtained by apply | coating the composition of Claim 2 to a base material, and heating. 請求項4記載のフィルムを有する電気、電子材料。 An electric or electronic material comprising the film according to claim 4.
JP2003383941A 2003-11-13 2003-11-13 Fluoropolyimide Pending JP2005146077A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210125725A (en) * 2020-04-09 2021-10-19 피아이첨단소재 주식회사 Polyimide solution, method for preparing the same, polyimide for using the same, and semiconductor device comprising the same
EP4151672A1 (en) * 2020-05-11 2023-03-22 Daikin Industries, Ltd. Amide compound, nitrogen-containing heterocyclic compound, and crosslinked product

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210125725A (en) * 2020-04-09 2021-10-19 피아이첨단소재 주식회사 Polyimide solution, method for preparing the same, polyimide for using the same, and semiconductor device comprising the same
KR102334495B1 (en) 2020-04-09 2021-12-06 피아이첨단소재 주식회사 Polyimide solution, method for preparing the same, polyimide for using the same, and semiconductor device comprising the same
EP4151672A1 (en) * 2020-05-11 2023-03-22 Daikin Industries, Ltd. Amide compound, nitrogen-containing heterocyclic compound, and crosslinked product
EP4151672A4 (en) * 2020-05-11 2024-05-29 Daikin Industries, Ltd. Amide compound, nitrogen-containing heterocyclic compound, and crosslinked product

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