JP2005032838A - Method and device for charged particle beam lithography and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for raster scanning charged particle beam exposure by which a substrate can be exposed to a desired pattern. <P>SOLUTION: The method for charged particle beam lithography in which the substrate is exposed to the desired pattern by raster scanning a charged particle beam includes an adjusting step of narrowing the size of the charged particle beam on the substrate in the raster scanning direction as compared with the size of the beam in the direction perpendicular to the raster scanning direction. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a charged particle beam drawing method for exposing a substrate by raster scanning a charged particle beam. Such a charged particle beam drawing method is mainly applied for exposing a device having a fine pattern such as a semiconductor integrated circuit in a charged particle beam exposure apparatus such as an electron beam exposure apparatus and an ion beam exposure apparatus.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an electron beam exposure method is known in which a wafer is raster-scanned and drawn with an electron beam (eg, Patent Document 1). A conventional raster scan type electron beam exposure apparatus is shown in FIG. In the figure, S is an electron source that emits an electron beam, B is a blanker, and the electron beam from the electron source S forms an image of the electron source S at the position of the blanker B by an electron lens L1. The electron source image is reduced and projected onto the wafer W through a reduction electron optical system including electron lenses L2 and L3. The blanker B is an electrostatic deflector located at the position of the image of the electron source S formed by the electron lens L1, and controls whether or not the wafer is irradiated with an electron beam. That is, when the wafer is not irradiated with the electron beam, the blanker B deflects the electron beam, and the electron beam EBoff is blocked by the blanking aperture BA located on the pupil of the reduction electron optical system. On the other hand, at the time of electron beam irradiation, the electron beam EBoon that has passed through the blanking aperture BA is scanned on the wafer W by the electrostatic deflector DEF.
[0003]
Next, a method for drawing a wafer by raster scanning will be described with reference to FIG. For example, when it is desired to draw a pattern of the letter “A”, the drawing area is divided into a plurality of pixels. Then, while the electron beam is scanned in the X direction by the deflector DEF, the blanker B is controlled so that the pixel beam in the pattern (gray) portion is irradiated and the electron beam is blocked in the other pixels. . When the scanning in the X direction is completed, the electron beam steps in the Y direction, and the pattern is drawn by controlling the irradiation of the electron beam while scanning in the X direction.
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 9-245708
[Problems to be solved by the invention]
However, when a pixel is exposed by raster scanning with an electron beam, as shown in FIG. 7, the position of the electron beam in the raster scan direction (X direction) changes with time, but in a direction orthogonal to the raster scan direction ( In the Y direction), the position of the electron beam does not change. That is, as shown in FIG. 7B, the exposure distribution of pixels in the raster scan direction (X direction) is an average value or an integrated value (hereinafter referred to as a moving average value) when the electron beam moves within the pixel. Become. The resulting pixel intensity distribution (moving average value) is shown in FIG. In this case, for example, even if the electron beam is an intensity distribution of a Gaussian distribution targeted for an axis, if the image is drawn by raster scan, the intensity distribution spreads in the raster scan direction (X direction), as if there is astigmatism. Due to the intensity distribution, it is difficult to form a desired fine pattern on the wafer. The present invention has been made in view of such problems of the conventional technology, and an object thereof is to provide a charged particle beam exposure apparatus capable of exposing a desired fine pattern.
[0006]
[Means to solve the problem]
In order to achieve the above object, according to the present invention, in a charged particle beam drawing method for exposing a substrate by raster scanning a charged particle beam, the size of the charged particle beam on the substrate in the raster scan direction is defined as the raster direction. It is characterized by having an adjustment step that is narrower than the size in the orthogonal direction.
[0007]
Preferably, the first measurement step of measuring the size of the charged particle beam on the substrate in the raster scan direction and the second measurement step of measuring the size of the charged particle beam on the substrate in a direction orthogonal to the raster scan direction are preferably performed. The measurement step, the result obtained by moving and averaging the results of the first measurement step, and the result of the second measurement step are evaluated, and the adjustment step is executed based on the evaluation result.
[0008]
The device manufacturing method of the present invention is characterized in that a device is manufactured using the charged particle beam drawing method.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
In this embodiment, an example of an electron beam exposure apparatus is shown as an example of a charged particle beam exposure apparatus according to the present invention. Note that this embodiment is not limited to an electron beam and can be similarly applied to an exposure apparatus using an ion beam.
[0010]
<Description of components of electron beam exposure apparatus>
FIG. 1 is a schematic view of a main part of an electron beam exposure apparatus according to an embodiment of the present invention. In FIG. 1, an electron beam generated by an electron gun (not shown) forms a crossover image 1 (hereinafter, this crossover image is referred to as an electron source 1). The electron beam emitted from the electron source 1 forms an image SI of the electron source 1 via the beam shaping optical system 2. At that time, astigmatism can be generated in the image SI by the first stigmator 3 which is a magnetic field type octupole stigmator. With this astigmatism, astigmatism of an electron beam image projected onto the wafer 9 described later can be corrected.
[0011]
The electron beam from the image SI becomes a substantially parallel electron beam by the collimator lens 4. The substantially parallel electron beam irradiates the aperture array 5 having a plurality of apertures. The aperture array 5 divides the electron beam into a plurality of electron beams corresponding to the plurality of apertures on a one-to-one basis. The plurality of electron beams divided by the aperture array 5 forms an intermediate image of the image SI by the electrostatic lens array 6 in which a plurality of electrostatic lenses are formed. A blanker array 7 in which a plurality of blankers that are electrostatic deflectors are formed is disposed on the intermediate image plane.
[0012]
Downstream of the intermediate image plane, there is a reduction electron optical system 8 composed of two stages of symmetrical magnetic tablet lenses 81 and 82, and a plurality of intermediate images are projected onto the wafer 9. At this time, since the electron beam deflected by the blanker array 7 is blocked by the blanking aperture BA, the wafer 9 is not irradiated. On the other hand, since the electron beam that is not deflected by the blanker array 7 is not blocked by the blanking aperture BA, it is irradiated onto the wafer 9. That is, the blanker array 7 controls (on / off) whether or not the plurality of electron beams divided by the aperture array 5 are individually irradiated onto the wafer 9.
[0013]
In the lower doublet lens 82, a deflector 10 for simultaneously displacing a plurality of electron beams to desired positions in the X and Y directions, and an electrostatic type 8 for simultaneously adjusting astigmatism of the plurality of electron beams. A second stigmator 11 that is a pole stigmator and a focus coil 12 that simultaneously adjusts the focus of a plurality of electron beams are arranged. Reference numeral 13 denotes an XY stage on which the wafer 9 is mounted and can be moved in the XY directions orthogonal to the optical axis. An electrostatic chuck 15 for fixing the wafer 9 and a semiconductor detector 14 having a single knife edge extending in the X and Y directions on the electron beam incident side for measuring the shape of the electron beam are disposed on the stage. . By changing the output of the semiconductor detector 14 when the electron beam is scanned in the Y direction with respect to the single knife edge extending in the X direction, the shape of the electron beam in the X direction can be measured, and the single knife edge extending in the Y direction can be measured. On the other hand, by scanning in the X direction, the shape of the electron beam in the Y direction can be measured.
[0014]
In the present embodiment, the second stigmator 11 is used for correcting astigmatism that changes due to deflection of the electron beam, and the first stigmator 3 is used for the lens during device assembly. It is used to correct astigmatism that does not change due to deflection of the electron beam, such as that caused by decentration. The first stigmator 3 may be disposed anywhere on the optical axis, but is preferably disposed between the light source 1 and the aperture array 5.
[0015]
<Description of system configuration and drawing method>
FIG. 2 shows a system configuration diagram of the present embodiment. The first stigmator control circuit 21 adjusts the difference in the focal length of the first stigmator 3 in the orthogonal direction, thereby controlling the astigmatism of the electron source image SI. The blanker array control circuit 22 A circuit that individually controls a plurality of blankers constituting the blanker array 7, a deflector control circuit 23 is a circuit that controls the deflector 10, and a second stigmator control circuit 24 is a direction orthogonal to the second stigmator 11. By adjusting the difference in the focal lengths, the circuit for controlling astigmatism of the reduction electron optical system 8, the electron beam shape detection circuit 25, the circuit for processing the signal from the semiconductor detector 14, and the focus control circuit 26 A circuit for controlling the focal position of the reduction electron optical system 8 by adjusting the focal length of the focus coil 12, and a stage drive control circuit 27 The third position in cooperation with a laser interferometer (not shown) for detecting a control circuit for controlling the stage 13. The main control system 28 controls the plurality of control circuits and manages the entire electron beam exposure apparatus.
[0016]
An explanatory diagram of the drawing method of this embodiment is shown in FIG. The drawing operation by the apparatus shown in FIGS. 1 and 2 will be described with reference to FIG. The main control system 28 commands the deflection control circuit 23 based on the exposure control data, deflects a plurality of electron beams by the deflector 10, and commands the blanker array control circuit 22 to respond to the pixel to be exposed on the wafer 9. The blankers of the blanker array 7 are individually turned on / off. As shown in FIG. 3, each electron beam performs a raster scan exposure on a corresponding element exposure region (EF) on the wafer 9. Since the element exposure area (EF) of each electron beam is set so as to be adjacent in two dimensions, as a result, a subfield (SF) composed of a plurality of element exposure areas (EF) that are exposed simultaneously is formed. Exposed.
[0017]
In one embodiment, the number of electron beams divided by the aperture array 5 is 32 × 32 = 1024, and each electron beam draws an element exposure area (EF) of about 2 μm square. Here, the diameter of one electron beam is about 60 nm on the wafer. One subfield (SF) is formed by 32 × 32 = 1024 element exposure regions. The size of one subfield (SF) is about 64 μm square.
[0018]
The main control system 28 directs the deflection control circuit 23 to deflect a plurality of electron beams by the deflector 10 in order to expose the next subfield (SF2) after exposing one subfield (SF1). At this time, the subfield changes due to the deflection, so that the aberration when each electron beam is reduced and projected via the reduction electron optical system 8 also changes. The second stigmometer control circuit 24 performs correction so that this aberration becomes constant based on a command from the main control system 28. When a subfield group of about 2 mm square consisting of 32 × 32 = 1024 subfields of about 64 μm square is exposed, the XY stage is moved by about 2 mm, and the next subfield group is exposed.
[0019]
Although not shown, the deflector 10 includes a main deflector used when the deflection width is wide and a sub-deflector used when the deflection width is narrow. The main deflector is an electromagnetic deflector. The sub deflector is an electrostatic deflector. The element exposure area is scanned by an electrostatic sub-deflector, and subfield switching is performed by an electromagnetic main deflector.
[0020]
<Description of operation>
The operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG. For the wafer processing of the exposure apparatus, the main control system 28 executes the following steps.
(Step 1) The main control system 28 uses the electron beam shape detection circuit 25 to scan only the center beam located substantially at the center of the subfield on the knife edge of the semiconductor detector 14, and the X direction and Y direction of the beam. Measure the beam shape.
(Step 2) In step 1, the beam shape in the X direction, which is the raster scan direction, is moved and averaged by the width of the pixel, and the shape is stored.
(Step 3) An astigmatism amount in which the moving average beam shape in the X direction substantially matches the beam shape in the Y direction is calculated.
(Step 4) The calculated astigmatism is corrected by the first stigmator. As a result, the astigmatism is adjusted so that the size of the electron beam on the substrate in the raster scan direction (X direction) is narrower than the size in the direction orthogonal to the raster direction (Y direction).
[0021]
As a supplement, the function of the first stigmator will be described with reference to FIG. When the driving of the first stigmator is off, the electron source image SI is substantially circular, and the plurality of electron source images on the blanker array are also substantially circular. However, due to the astigmatism of the reduction electron optical system 8, the plurality of electron source images on the wafer are elliptical. On the other hand, when the drive of the first stigmator is turned on, the electron source image SI becomes an ellipse so as to cancel the astigmatism of the reduction electron optical system 8, and at the same time, a plurality of electron source images on the blanker array also become an ellipse. Become. As a result, the plurality of electron source images on the wafer 9 are substantially circular. Further, when astigmatism is corrected, astigmatism is generated in the original power supply image SI, so that other aberrations of the reduced electron optical system 8 do not occur.
[0022]
(Step 5) The wafer 9 is carried into the stage 13.
(Step 6) The main control system 28 deflects the plurality of electron beams to the subfield to be exposed by the deflector control circuit 23.
(Step 7) Draw a subfield to be exposed.
(Step 8) When drawing of all the subfields is completed, the process proceeds to step 9; otherwise, the process returns to step 6.
(Step 9) The wafer 9 is unloaded from the stage 13.
[0023]
As described above, according to the present embodiment, the raster scan charged particle beam exposure apparatus can reduce the distortion of the electron beam caused by the raster scan and expose a desired pattern. Moreover, if a device is manufactured using this apparatus, a device having a higher yield than conventional devices can be manufactured.
[0024]
(Device production method)
Next, an embodiment of a device production method using the electron beam exposure apparatus described above will be described.
FIG. 8 shows the flow of manufacturing a microdevice (semiconductor chip such as IC or LSI, liquid crystal panel, CCD, thin film magnetic head, micromachine, etc.). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (exposure control data creation), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).
[0025]
FIG. 9 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
By using the manufacturing method of the present embodiment, a highly integrated semiconductor device that has been difficult to manufacture can be manufactured at low cost.
[0026]
[Scope of the invention]
In the above-described embodiment, an example in which the present invention is applied to a multi-electron beam exposure apparatus that performs drawing with a plurality of electron beams has been described. However, the present invention may be applied to the case of using a single electron beam. The same suitable effect is produced.
[0027]
【The invention's effect】
As described above, according to the present invention, when a charged particle beam is raster-scanned and drawn, distortion of the electron beam caused by the raster scan can be reduced and a desired fine pattern can be exposed. Moreover, if a device is manufactured using the raster scan charged particle beam drawing apparatus to which the present invention is applied, the device can be manufactured with a higher yield than before.
[Brief description of the drawings]
FIG. 1 is a view showing an outline of a main part of an electronic exposure apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a system according to the present embodiment.
FIG. 3 is a diagram illustrating a drawing method according to the present embodiment.
FIG. 4 is a view for explaining an exposure operation of the present embodiment.
FIG. 5 is a diagram illustrating the function of a first stigmator.
FIG. 6 is a diagram illustrating a conventional raster scan type electron beam exposure apparatus.
FIG. 7 is a diagram illustrating a pixel intensity distribution by a conventional raster scan.
FIG. 8 is a diagram illustrating a flow of a device manufacturing process.
9 is a diagram illustrating the wafer process in FIG. 8. FIG.
[Explanation of Symbols] 1: Electron source, 2: Beam shaping optical system, 3: First stigmator, 4: Collimator lens, 5: Aperture array, 6: Electrostatic lens array, 7: Blanker array, 8: Reduction Electron optical system, 9: wafer, 10: deflector, 11: second stigmator, 12: focus coil, 13: XY stage, 14: semiconductor detector, 15: electrostatic chuck.

Claims (3)

In a charged particle beam drawing method for exposing a substrate by raster scanning a charged particle beam,
A charged particle beam drawing method comprising: an adjusting step of narrowing a size of a charged particle beam on a substrate in a raster scan direction as compared with a size in a direction orthogonal to the raster scan direction. A first measurement step for measuring the size of the charged particle beam in the raster scan direction on the substrate;
A second measurement step of measuring the size of the charged particle beam on the substrate in the direction orthogonal to the raster scan direction,
2. The charged particle according to claim 1, wherein the result of moving average of the result of the first measurement step and the result of the second measurement step are evaluated, and the adjustment step is executed based on the evaluation result. Line drawing method. A device manufacturing method, wherein a device is manufactured using the charged particle beam drawing method according to claim 1.

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