JP2005094038A - Ferroelectric memory device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To surely prevent hydrogen from infiltrating into a capacitive insulating film of a ferroelectric capacitor and miniaturize a ferroelectric memory device. <P>SOLUTION: The ferroelectric memory device has a lower electrode 109, a capacitive insulating film 112 consisting of a ferroelectric film, and an upper electrode 113, which are sequentially formed on a first interlayer insulating film 105 on a semiconductor substrate 100, and is also provided with a plurality of ferroelectric capacitors arranged in the word line direction and the bit line direction. A first insulative hydrogen barrier film 111 is embedded between the lower electrodes 109 of a plurality of the ferroelectric capacitors arranged in the word line direction. The capacitive insulating film 112 common to a plurality of the ferroelectric capacitors arranged in the word line direction is formed on the lower electrode 109 and the first insulative hydrogen barrier film 111, the upper electrode 113 common to a plurality of the ferroelectric capacitors arranged in the word line direction is formed on the common capacitive insulating film 112, and a second insulative hydrogen barrier film 115 is formed on the common upper electrode 113. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention includes a plurality of ferroelectric layers, which are sequentially formed on a semiconductor substrate, each including a lower electrode, a capacitive insulating film made of a ferroelectric film, and an upper electrode, and arranged in a matrix in the word line direction and the bit line direction. The present invention relates to a ferroelectric memory device including a body capacitor and a method for manufacturing the same.

In recent years, as a semiconductor memory device, for example, a ferroelectric material film having hysteresis characteristics such as SrBi ₂ Ta ₂ O ₉ (hereinafter referred to as SBT) or Pb (Zr, Ti) O ₃ (hereinafter referred to as PZT) is used. A nonvolatile ferroelectric memory device having a capacitive insulating film has been developed. Ferroelectric materials such as SBT and PZT used in such a ferroelectric memory device are ferroelectric oxides.

  For this reason, in the atmosphere containing hydrogen, which is performed to secure the characteristics of the MOS transistor formed on the semiconductor substrate after forming the aluminum wiring through the interlayer insulating film on the plurality of ferroelectric capacitors. In a CVD method performed to embed a tungsten film in a contact hole having a high aspect ratio accompanying heat treatment or miniaturization of a semiconductor memory device, if a ferroelectric oxide is exposed to a reducing atmosphere, particularly a hydrogen atmosphere, The dielectric oxide is reduced. For this reason, since the crystal composition of the ferroelectric oxide is destroyed, the insulating characteristics of the capacitive insulating film or the characteristics of the ferroelectric oxide are greatly deteriorated.

  Therefore, even if the ferroelectric capacitor is formed and then subjected to a heat treatment in a hydrogen atmosphere, the capacitive insulating film of the ferroelectric capacitor is not exposed to hydrogen and reduced. As described above, a hydrogen barrier film that prevents hydrogen from entering the capacitor insulating film is formed so as to cover the ferroelectric capacitor.

  However, when a hydrogen barrier film is provided between a ferroelectric capacitor and an interlayer insulating film formed on the ferroelectric capacitor, in order to block hydrogen from entering from the horizontal direction, It is necessary to make the area at least several μm larger than the area of the ferroelectric capacitor. In addition, since the hydrogen barrier film is also formed on the contact plug embedded in the interlayer insulating film, when the contact plug is formed of a tungsten film formed by a CVD method, the capacitive insulating film included in the hydrogen barrier film The effect of preventing the entry of hydrogen into the water is reduced.

In particular, in recent years, with the miniaturization of ferroelectric memory devices, the area of ferroelectric capacitors has been reduced (1 μm ² or less). It is not possible to reliably prevent hydrogen from entering the capacitor insulating film only by covering it.

  Therefore, in Patent Document 1, a ferroelectric memory device having a structure as shown in FIG. 6 is proposed.

  Hereinafter, a ferroelectric memory device shown in FIG. 6 will be described as a conventional example.

  On the surface portion of the silicon substrate 10, an element isolation region 11 is formed and an impurity diffusion layer 12 serving as a source or drain is formed. A gate electrode 13 is formed between the impurity diffusion regions 12 on the silicon substrate 10 via a gate insulating film, and the gate electrode 13 and the impurity diffusion layer 12 constitute a field effect transistor. .

  A first interlayer insulating film 14 is formed on the field effect transistor and element isolation region 11, and a first insulating property is provided above the element isolation region 11 on the first interlayer insulating film 14. A hydrogen barrier film 15 is formed. On the first insulating hydrogen barrier film 15, a ferroelectric capacitor including a lower electrode 16, a capacitive insulating film 17 made of a ferroelectric film and an upper electrode 18 is formed. A conductive hydrogen barrier film 19 is formed on the upper electrode 18, and a second insulation is provided so as to cover the upper surface of the conductive hydrogen barrier film 19 and the side surfaces of the lower electrode 16, the capacitor insulating film 17, and the upper electrode 18. The ferroelectric hydrogen barrier film 20 is formed, and the ferroelectric capacitor is completely covered with the first insulating hydrogen barrier film 15, the conductive hydrogen barrier film 19, and the second insulating hydrogen barrier film 20. .

A second interlayer insulating film 21 is formed on the first interlayer insulating film 14 and the second insulating hydrogen barrier film 20. A metal wiring 22 is formed on the second interlayer insulating film 21, and the metal wiring 22 is connected to a contact plug 23 embedded in the first interlayer insulating film 14 and the second interlayer insulating film 21. doing.
Japanese Patent Laid-Open No. 11-135736

  As described above, the ferroelectric capacitor is completely covered with the first insulating hydrogen barrier film 15, the conductive hydrogen barrier film 19, and the second insulating hydrogen barrier film 20. It is possible to prevent the hydrogen from entering the water.

  However, in the conventional ferroelectric memory device, the side portion of the second insulating hydrogen barrier film 20 disappears due to mask displacement when the second insulating hydrogen barrier film 20 is patterned, A situation occurs in which the film thickness becomes thin.

  Therefore, it is necessary to increase the thickness of the second insulating hydrogen barrier film 20 and increase the margin of the mask for patterning the second insulating hydrogen barrier film 20.

  For this reason, since it is necessary to increase the interval between the ferroelectric capacitors, there is a problem that it is difficult to miniaturize the ferroelectric memory device.

  In view of the foregoing, it is an object of the present invention to achieve both a reliable prevention of a situation where hydrogen enters a capacitive insulating film of a ferroelectric capacitor and a miniaturization of a ferroelectric memory device.

In order to achieve the above object, a ferroelectric memory device according to claim 1 of the present invention includes a lower electrode, a capacitor insulating film formed of a ferroelectric film, and a lower electrode sequentially formed on an interlayer insulating film on a semiconductor substrate. A ferroelectric memory device comprising a plurality of ferroelectric capacitors having an upper electrode and arranged in a word line direction and a bit line direction,
A first hydrogen barrier film provided so as to cover the plurality of upper electrodes, wherein the first hydrogen barrier film is arranged in one of a word line direction and a bit line direction; Of the capacitor rows made of capacitors, the capacitor rows are formed so as to cover a pair of capacitor rows adjacent to each other in the word line direction and the bit line direction.

  In this case, it is not necessary to secure a dimensional margin between a pair of capacitor rows made of a plurality of ferroelectric capacitors arranged in one direction in the first hydrogen barrier film. The area of the memory cell array and thus the ferroelectric memory device can be reduced. In addition, since there is a region where the hydrogen barrier film is not formed in the vicinity of the selection transistor of the ferroelectric memory device, heat treatment in a hydrogen atmosphere is performed in order to restore the characteristics of the transistor after forming the metal wiring. , A path for hydrogen to diffuse into the selection transistor can be secured.

  According to a ferroelectric memory device in accordance with a second aspect of the present invention, in the ferroelectric memory device according to the first aspect, among the plurality of ferroelectric capacitors, the plurality of ferroelectric capacitors arranged in the one direction. An insulating second hydrogen barrier film embedded between the lower electrodes is further provided.

  According to the ferroelectric memory device of the present invention, the second insulating hydrogen barrier film is embedded between the lower electrodes of the plurality of ferroelectric capacitors arranged in one of the word line direction and the bit line direction. Therefore, it is not necessary to pattern the region between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction in the second insulating hydrogen barrier film. For this reason, it is not necessary to secure a dimensional margin between the lower electrodes in consideration of the positional deviation of the mask for patterning. Therefore, the interval between the ferroelectric capacitors is narrowed, and the memory cell array and the ferroelectric layer are thus formed. The area of the body memory device can be reduced.

  According to the ferroelectric memory device of the third aspect of the present invention, since the first hydrogen barrier film is formed so as to cover the common upper electrode, the hydrogen atmosphere is formed after the ferroelectric capacitor is formed. When the heat treatment is performed, hydrogen entering from the upper side to the capacitor insulating film of the ferroelectric capacitor can be prevented, so that the reduction of the ferroelectric film constituting the capacitor insulating film can be prevented.

  According to a ferroelectric memory device according to a fourth aspect of the present invention, in the ferroelectric memory device according to the first or second aspect, the contact plug formed in the interlayer insulating film and the lower electrode A conductive third hydrogen barrier film is preferably formed therebetween.

  In this way, when heat treatment in a hydrogen atmosphere is performed after the ferroelectric capacitor is formed, hydrogen can be prevented from entering the capacitor insulating film of the ferroelectric capacitor from below, so that the capacitor insulating film Can be prevented.

  According to a ferroelectric memory device of a fifth aspect of the present invention, in the ferroelectric memory device according to the fourth aspect of the present invention, a capacitor row composed of the plurality of ferroelectric capacitors arranged in the one direction is the first row. The hydrogen barrier film, the second hydrogen barrier film, and the third hydrogen barrier film are preferably completely covered.

  In this way, even if a heat treatment in a hydrogen atmosphere is performed after forming the ferroelectric capacitor, it is possible to reliably prevent hydrogen from entering the capacitor insulating film of the ferroelectric capacitor. Therefore, the deterioration of the characteristics of the capacitive insulating film can be surely prevented.

According to a ferroelectric memory device of a sixth aspect of the present invention, in the ferroelectric memory device according to the first aspect, the ferroelectric memory device is formed between the common upper electrode and the first hydrogen barrier film, It is preferable that a step mitigation film for mitigating the step formed on the peripheral edge of the common upper electrode is formed.

  By doing so, the angular step formed at the peripheral end of the patterned upper electrode is relieved, so that the coverage at the peripheral end of the upper electrode of the first hydrogen barrier film can be improved.

According to a ferroelectric memory device of a seventh aspect of the present invention, in the ferroelectric memory device according to the second aspect, the insulating second hydrogen barrier film includes a Si ₃ N ₄ film and a SiON film. Alternatively, an Al ₂ O ₃ film, a TiO ₂ film, an alloy film of Ti and Al, or an oxynitride film can be used.

According to a ferroelectric memory device in accordance with an eighth aspect of the present invention, in the ferroelectric memory device according to the first aspect, the first hydrogen barrier film is a Si ₃ N ₄ film, a SiON film, or an Al ₂ O film. _Three films, a TiO ₂ film, a TiN film, an alloy film of Ti and Al, an oxide film, a nitride film, or an oxynitride film of an alloy of Ti and Al can be used.

  According to a ferroelectric memory device according to claim 9 of the present invention, in the ferroelectric memory device according to claim 4, the conductive third hydrogen barrier film includes an alloy film of Ti and Al, A nitride film or oxynitride film of an alloy of Ti and Al, or a TiN film can be used.

A method for manufacturing a ferroelectric memory device according to claim 10 of the present invention includes:
A plurality of ferroelectric capacitors having a lower electrode, a capacitor insulating film made of a ferroelectric film, and an upper electrode sequentially formed on an interlayer insulating film on a semiconductor substrate, and arranged in a word line direction and a bit line direction A method for manufacturing a ferroelectric memory device comprising:
Forming lower electrodes of the plurality of ferroelectric capacitors on the interlayer insulating film;
Forming a capacitive insulating film on the lower electrode;
Forming an upper electrode on the capacitive insulating film;
The first hydrogen barrier film covers a plurality of the upper electrodes and includes a plurality of ferroelectric capacitors arranged in one direction of the word line direction and the bit line direction. Forming a pair of capacitor rows that are adjacent to each other in the bit line direction.

  In this case, it is not necessary to secure a dimensional margin between a pair of capacitor rows made of a plurality of ferroelectric capacitors arranged in one direction in the first hydrogen barrier film. The area of the memory cell array and thus the ferroelectric memory device can be reduced. In addition, since there is a region where the hydrogen barrier film is not formed in the vicinity of the selection transistor of the ferroelectric memory device, heat treatment in a hydrogen atmosphere is performed in order to restore the characteristics of the transistor after forming the metal wiring. , A path for hydrogen to diffuse into the selection transistor can be secured.

  The method of manufacturing a ferroelectric memory device according to claim 11 of the present invention is the method of manufacturing a ferroelectric memory device according to claim 10, wherein the capacitor insulating film is formed after the step of forming the lower electrode. Prior to the step, an insulating second hydrogen barrier film is deposited on the interlayer insulating film and the lower electrode, and then the second hydrogen barrier film is planarized to form the plurality of ferroelectric capacitors. The method further includes the step of burying a second hydrogen barrier film between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction.

  According to the method for manufacturing a ferroelectric memory device according to the present invention, the second insulating hydrogen barrier film is embedded between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction. It is not necessary to perform patterning in the region between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction in the insulating hydrogen barrier film. For this reason, it is not necessary to secure a dimensional margin between the lower electrodes in consideration of the positional deviation of the mask for patterning. Therefore, the interval between the ferroelectric capacitors is narrowed, and the memory cell array and the ferroelectric layer are thus formed. The area of the body memory device can be reduced.

  A method for manufacturing a ferroelectric memory device according to a twelfth aspect of the present invention is the method for manufacturing a ferroelectric memory device according to the tenth or eleventh aspect, in which the interlayer is formed before the step of forming the lower electrode. It is preferable that the method further includes a step of forming a conductive third hydrogen barrier film interposed between the contact plug formed in the insulating film and the lower electrode.

  In this way, when heat treatment in a hydrogen atmosphere is performed after the ferroelectric capacitor is formed, hydrogen can be prevented from entering the capacitor insulating film of the ferroelectric capacitor from below, so that the capacitor insulating film Can be prevented.

  A method for manufacturing a ferroelectric memory device according to a thirteenth aspect of the present invention is the method for manufacturing a ferroelectric memory device according to the twelfth aspect, comprising the step of forming the third conductive hydrogen barrier film. A capacitor array composed of a plurality of ferroelectric capacitors arranged in one direction is completely covered by the first hydrogen barrier film, the second hydrogen barrier film, and the third hydrogen barrier film. Is preferred.

  In this way, even if a heat treatment in a hydrogen atmosphere is performed after forming the ferroelectric capacitor, it is possible to reliably prevent hydrogen from entering the capacitor insulating film of the ferroelectric capacitor. Therefore, the deterioration of the characteristics of the capacitive insulating film can be surely prevented.

  The method for manufacturing a ferroelectric memory device according to the present invention includes a step of forming a common upper electrode between the step of forming the common upper electrode and the step of forming the first insulating or conductive hydrogen barrier film. Preferably, the method further includes a step of forming a step mitigating film interposed between the two insulating hydrogen barrier films and mitigating a step formed on the peripheral portion of the common upper electrode.

  In this way, the angular step formed at the peripheral end of the patterned upper electrode is alleviated, so that the coverage at the peripheral end of the upper electrode of the second insulating hydrogen barrier film can be improved. .

In the method for manufacturing a ferroelectric memory device according to claim 15 of the present invention, the second insulating hydrogen barrier film may be a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, or Ti An oxide film or an oxynitride film of an alloy of Al and Al can be used.

In the method for manufacturing a ferroelectric memory device according to claim 16 of the present invention, the first hydrogen barrier film may be a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, a TiN film, or An alloy film of Ti and Al, or an oxide film, a nitride film, or an oxynitride film of an alloy of Ti and Al can be used.

  In the method of manufacturing a ferroelectric memory device according to claim 17 of the present invention, the conductive third hydrogen barrier film includes an alloy film of Ti and Al, a nitride film of an alloy of Ti and Al, or an acid. A nitride film or a TiN film can be used.

  According to the ferroelectric memory device and the method of manufacturing the same according to the present invention, the insulating second hydrogen barrier film is embedded between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction. It is not necessary to pattern the region between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction in the second hydrogen barrier film. For this reason, it is not necessary to secure a dimensional margin between the lower electrodes in consideration of the positional deviation of the mask for patterning. Therefore, the interval between the ferroelectric capacitors is narrowed, and the memory cell array and the ferroelectric layer are thus formed. The area of the body memory device can be reduced.

  Hereinafter, the structure of a ferroelectric memory device according to an embodiment of the present invention will be described with reference to FIGS.

  A ferroelectric memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells arranged in a matrix in a word line direction and a bit line direction. FIG. 1 shows a cross-sectional structure of a surface parallel to the word line in the ferroelectric memory device, and FIG. 2 shows a cross-sectional structure of a surface parallel to the bit line in the ferroelectric memory device.

  As shown in FIGS. 1 and 2, an element isolation region 101 is formed on a surface portion of a semiconductor substrate 100 made of silicon, and a region surrounded by the element isolation region 101 on the semiconductor substrate 100 is gate-insulated. A gate electrode 102 is formed through the film. First high-concentration impurity diffusion layers 103A and 103B serving as a source or a drain are formed on both sides of the gate electrode 102 on the surface portion of the semiconductor substrate 100, and the gate electrode 102 and the first impurity diffusion layers 103A and 103B are formed. Thus, a field effect transistor is configured. A second high-concentration impurity diffusion layer 104 is formed on the peripheral portion of the memory cell array on the surface portion of the semiconductor substrate 100.

  A first interlayer insulating film 105 is formed on the semiconductor substrate 100 so as to cover the field effect transistor. A first contact plug 106 and a second contact plug 107 are embedded in the first interlayer insulating film 105, and the lower end of the first contact plug 106 is connected to the first high-concentration impurity diffusion layer 103A. In addition, the lower end of the second contact plug 107 is connected to the second high-concentration impurity diffusion layer 104.

  A conductive third hydrogen barrier film 108 is formed on the first interlayer insulating film 105 so as to be connected to the upper end of the first contact plug 106 or the upper end of the second contact plug 107. A lower electrode 109 is formed on the conductive hydrogen barrier film 108 positioned on the first contact plug 106, and the conductive hydrogen barrier film 108 positioned on the second contact plug 107 is formed. An upper electrode relay part 110 is formed on the upper part.

  An insulating second hydrogen barrier film 111 is formed on the first interlayer insulating film 105 so as to surround the lower electrode 109 and the upper electrode relay portion 110. The upper surface of the lower electrode 109, the upper electrode relay is formed. The upper surface of the portion 110 and the upper surface of the insulating second hydrogen barrier film 111 are substantially flush. In the present embodiment, as shown in FIG. 1, an insulating second hydrogen barrier film 111 is buried between the lower electrodes 109 arranged in the word line direction without any gap, but as shown in FIG. In addition, a gap is formed between the insulating second hydrogen barrier films 111 formed between the lower electrodes 109 arranged in the bit line direction.

  On the lower electrode 109 and the insulating second hydrogen barrier film 111 aligned in the word line direction, a capacitor insulating film 112 made of a ferroelectric film and common to the ferroelectric capacitors aligned in the word line direction is formed. An opening is formed on the capacitor insulating film 112 above the upper electrode relay portion 110. An upper electrode 113 common to the ferroelectric capacitors arranged in the word line direction is formed on the capacitor insulating film 112. The upper electrode 113 is connected to the upper electrode relay portion 110 through the opening of the capacitor insulating film. Connected. The ferroelectric capacitor is constituted by the lower electrode 109, the capacitor insulating film 112, and the upper electrode 113 described above, and the capacitor insulating film 112 and the upper electrode 113 are formed by a plurality of ferroelectric capacitors arranged in the word line direction. It is provided in common to the capacitor rows.

  A first hydrogen barrier film 115 is formed on the upper electrode 113 via a step relaxation film 114, and the peripheral portion of the first hydrogen barrier film 115 is an insulating second hydrogen barrier film 111. It is connected to the top surface. As a result, a capacitor row composed of a plurality of ferroelectric capacitors arranged in the word line direction is formed by the conductive third hydrogen barrier film 108, the insulating second hydrogen barrier film 111, and the first hydrogen barrier film 115. Fully covered.

  A second interlayer insulating film 116 is formed on the first interlayer insulating film 105 so as to cover the first hydrogen barrier film 115, and a first metal is formed on the second interlayer insulating film 116. A wiring 117 and a second metal wiring 118 are formed. The first metal wiring 117 and the first high-concentration impurity diffusion layer 103B are connected by a third contact plug 119 embedded in the first interlayer insulating film 105 and the second interlayer insulating film 116. The second metal wiring 118 and the second high-concentration impurity diffusion layer 104 are connected by a fourth contact plug 120 embedded in the first interlayer insulating film 105 and the second interlayer insulating film 116.

  According to the ferroelectric memory device of one embodiment of the present invention, the insulating second hydrogen barrier film 111 is buried between the lower electrodes 109 of the plurality of ferroelectric capacitors arranged in the word line direction. In the insulating second hydrogen barrier film 111, it is not necessary to pattern the region between the lower electrodes 109 of the plurality of ferroelectric capacitors arranged in the word line direction. For this reason, it is not necessary to secure a dimension margin between the lower electrodes 109 in consideration of the positional deviation of the mask for patterning. Therefore, the area of the memory cell array is reduced by narrowing the interval between the ferroelectric capacitors. Can be reduced.

  In addition, a capacitor row composed of a plurality of ferroelectric capacitors arranged in the word line direction is completely formed by the conductive third hydrogen barrier film 108, the insulating second hydrogen barrier film 111, and the first hydrogen barrier film 115. Therefore, even if a heat treatment in a hydrogen atmosphere is performed after the ferroelectric capacitor is formed, it is possible to reliably prevent hydrogen from entering the capacitor insulating film 112 of the ferroelectric capacitor. it can. For this reason, since the reduction of the ferroelectric film constituting the capacitor insulating film 112 is prevented, deterioration of the characteristics of the capacitor insulating film 112 can be prevented.

  Hereinafter, a ferroelectric memory device according to a modification of one embodiment of the present invention will be described with reference to FIG. In this modification, members common to one embodiment of the present invention are denoted by the same reference numerals, and description thereof is omitted.

  In one embodiment of the present invention, as shown in FIG. 2, a gap is formed between capacitor rows made of ferroelectric capacitors arranged in the word line direction, and a second interlayer insulating film is formed in the gap. 116 is embedded, but in the modified example, no gap is formed between a pair of capacitor columns adjacent in the bit line direction without the third contact plug 119. Between the pair of capacitor rows, the insulating second hydrogen barrier film 111, the step reducing film 114, and the first hydrogen barrier film 115 are continuous.

  According to the ferroelectric memory device in accordance with the modified example of the embodiment of the present invention, the insulating second hydrogen barrier film 111 can also be disposed between the lower electrodes 109 of the ferroelectric capacitors adjacent in the bit line direction. There is no need for patterning. Therefore, it is possible to further reduce the area of the memory cell array by reducing the interval between the lower electrodes 109 adjacent in the bit line direction.

  In addition, since there is a region where the hydrogen barrier film is not formed in the vicinity of the selection transistor of the ferroelectric memory device, heat treatment in a hydrogen atmosphere is performed in order to restore the characteristics of the transistor after forming the metal wiring. , A path for hydrogen to diffuse into the selection transistor can be secured. In particular, in the case of a stacked ferroelectric memory device in which a ferroelectric capacitor is formed on a transistor, a path for hydrogen to diffuse into the selection transistor can be provided in the vicinity of the transistor formation region. For this reason, in heat treatment in a hydrogen atmosphere to restore the transistor characteristics after forming the metal wiring, it is possible to reliably secure a path for hydrogen to diffuse into the selected transistor, thus ensuring the transistor characteristics. it can.

  A method for manufacturing a ferroelectric memory device according to an embodiment of the present invention will be described below with reference to FIGS. 4 (a) to (c) and FIGS. 5 (a) to (c).

  First, as shown in FIG. 4A, an element isolation region 101 is formed on the surface portion of a semiconductor substrate 100 made of silicon by a well-known STI (Shallow Trench Isolation) technique or the like, and then a semiconductor is formed by a well-known CMOS process. A gate electrode 102 is formed through a gate insulating film in a region surrounded by the element isolation region 101 on the substrate 100 (see FIG. 2), and then on both sides of the gate electrode 102 on the surface portion of the semiconductor substrate 100, First high-concentration impurity diffusion layers 103A and 103B to be a source or a drain are formed, and a second high-concentration impurity diffusion layer 104 is formed on the peripheral portion of the memory cell array in the surface portion of the semiconductor substrate 100. Thus, a field effect transistor including the gate electrode 102 and the first impurity diffusion layers 103A and 103B is formed.

  Next, a first interlayer insulating film 105 made of a BPSG film is formed on the semiconductor substrate 100 so as to cover the field-effect transistor, and then the lower end of the first interlayer insulating film 105 has a first height. A first contact hole connected to the concentration impurity diffusion layer 103A and a second contact hole whose lower end is connected to the second high concentration impurity diffusion layer 104 are formed. Next, after sequentially depositing a titanium film having a thickness of 10 nm by a sputtering method and a titanium nitride film having a thickness of 10 nm by a CVD method on the wall surfaces and bottom surfaces of the first contact hole and the second contact hole. Then, a tungsten film is deposited over the entire surface of the first and second contact holes and on the first interlayer insulating film 105 by CVD, and then the first interlayer insulation in the tungsten film is formed by CMP. By polishing back the exposed portion on the film 105, the first contact plug 106 and the second contact plug 107 are formed.

Next, after depositing a nitride film of an alloy of Ti and Al having a thickness of, for example, 40 nm on the first interlayer insulating film 105 by sputtering, the nitride film is deposited on the nitride film by sputtering. For example, a laminated film made of an Ir film having a thickness of 100 nm, an IrO2 film having a thickness of 50 nm, and a Pt film having a thickness of 100 nm is deposited, and then, the laminated film and the nitride film are patterned. 4 (b), a conductive third hydrogen barrier film 108 made of a nitride film of an alloy of Ti and Al, a lower electrode 109 made of a laminated film of an Ir film, an IrO ₂ film, and a Pt film, and The upper electrode relay part 110 is formed. The conductive third hydrogen barrier film 108 may be replaced with a Ti / Al alloy nitride film, a Ti / Al alloy film, or a Ti / Al alloy gold oxynitride film instead of the Ti / Al alloy nitride film. A physical film or a TiN film may be used.

Next, a Si ₃ N ₄ film having a thickness of 400 nm is deposited on the entire surface of the lower electrode 109, the upper electrode relay portion 110, and the first interlayer insulating film 105 by the CVD method, and then the CMP method is used. As shown in FIG. 4C, the insulating second hydrogen barrier film 111 is embedded between the lower electrodes 109 and between the lower electrode 109 and the upper electrode relay portion 110 as shown in FIG. At the same time, the upper surface of the insulating second hydrogen barrier film 111 is substantially flush with the upper surface of the lower electrode 109 and the upper surface of the upper electrode relay portion 110. The insulating hydrogen barrier film 111 may be a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, or an oxide of an alloy of Ti and Al, instead of the Si ₃ N ₄ film. A film or an oxynitride film can be used.

  Next, as shown in FIG. 5A, a spin coating method is used to form, for example, an SBT film on the lower electrode 109, the upper electrode relay portion 110, and the insulating second hydrogen barrier film 111 to a thickness of 100 nm. And depositing a ferroelectric film having a thickness on the lower electrode 109 and the insulating second hydrogen barrier film 111 aligned in the word line direction by patterning the ferroelectric film and A capacitor insulating film 112 having an opening is formed on the upper electrode relay portion 110. Next, after depositing a Pt film having a thickness of 100 nm on the capacitor insulating film 112 by sputtering, the Pt film is patterned to form the upper electrode 113 on the capacitor insulating film 112. As a result, a capacitor row in which ferroelectric capacitors including the lower electrode 109, the capacitor insulating film 112, and the upper electrode 113 are arranged in the word line direction is formed, and the capacitor insulating film 112 and the upper electrode 113 common to the capacitor row are formed. It is formed.

  Next, as shown in FIG. 5B, after depositing an NSG film having a thickness of 150 nm over the entire surface on the upper electrode 113 and the insulating second hydrogen barrier film 111, the NSG film Is stepped to completely cover the capacitor row made of ferroelectric capacitors arranged in the word line direction and the upper electrode relay portion 110 located at the end of the capacitor row, thereby reducing the step difference made of the NSG film. A film 114 is formed.

  Next, a first hydrogen barrier film 115 having a thickness of 100 nm is deposited over the entire surface of the step relaxation film 114 and the insulating second hydrogen barrier film 111, and then the first hydrogen barrier film is formed. 115 and the second hydrogen barrier film 111 are patterned so as to cover the capacitor rows made of ferroelectric capacitors arranged in the word line direction and the upper electrode relay portion 110 located at the end of the capacitor rows. In this case, the peripheral edge of the patterned first hydrogen barrier film 115 and the peripheral edge of the patterned insulating second hydrogen barrier film 111 are connected to each other, so that the strength aligned in the word line direction is strong. The capacitor array made of dielectric capacitors is completely covered with the conductive third hydrogen barrier film 108, the first hydrogen barrier film 115, and the insulating second hydrogen barrier film 111.

As the first hydrogen barrier film 115, a film capable of preventing intrusion of hydrogen, for example, a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, a TiN film, or an alloy film of Ti and Al, Alternatively, an oxide film, a nitride film, or an oxynitride film of an alloy of Ti and Al can be used.

  Incidentally, the step relaxation film 114 relaxes the angular step formed at the peripheral end portion of the capacitor insulating film 112 and the upper electrode 113 formed by patterning, and the capacitor insulating film 112 of the first hydrogen barrier film 115 and It is provided to improve the coverage at the peripheral edge of the upper electrode 113.

Therefore, when a film having excellent coverage such as a SiN film, a SiON film, an Al ₂ O ₃ film, a TiO film, or an oxide film of an alloy of Ti and Al is used as the first hydrogen barrier film 115. The step reducing film 114 can be omitted.

  Next, as shown in FIG. 5C, a second interlayer insulating film 116 made of an NSG film is formed on the first interlayer insulating film 105 so as to cover the patterned first hydrogen barrier film 115. Is deposited, the second interlayer insulating film 116 is planarized.

  Next, a third contact hole and a second high concentration connected to the first high concentration impurity diffusion layer 103B (see FIG. 2) are formed in the first interlayer insulating film 105 and the second interlayer insulating film 116. After forming the fourth contact hole connected to the impurity diffusion layer 104, a tungsten film is embedded in the third contact hole and the fourth contact hole, and the third contact plug 119 (see FIG. 2) and the second contact hole are formed. 4 contact plugs 120 are formed.

  Next, after depositing an Al alloy film on the second interlayer insulating film 116, the Al alloy film is patterned to form the first metal wiring 117 and the second metal film 118. A ferroelectric memory device according to an embodiment is obtained.

  In one embodiment of the present invention, an insulating second hydrogen barrier film 111 is provided between the lower electrodes 109 of the plurality of ferroelectric capacitors arranged in the word line direction among the plurality of ferroelectric capacitors. A capacitive insulating film that is embedded and is common to the plurality of ferroelectric capacitors arranged in the word line direction on the lower electrode 109 and the insulating second hydrogen barrier film 111 arranged in the word line direction. 112 is formed, an upper electrode 113 common to a plurality of ferroelectric capacitors arranged in the word line direction is formed on the common capacitor insulating film 112, and a first hydrogen barrier is formed so as to cover the common upper electrode 1113. The film 115 is formed, but instead of this, an insulating property is provided between the lower electrodes 109 of the plurality of ferroelectric capacitors arranged in the bit line direction among the plurality of ferroelectric capacitors. A plurality of ferroelectrics arranged in the bit line direction on the lower electrodes 109 of the plurality of ferroelectric capacitors arranged in the bit line direction and the insulating second hydrogen barrier film 111. A capacitor insulating film 112 common to the capacitors is formed, and an upper electrode 113 common to a plurality of ferroelectric capacitors arranged in the bit line direction is formed on the common capacitor insulating film 112 to cover the common upper electrode 1113. Thus, a structure in which the first hydrogen barrier film 115 is formed may be used.

  According to the ferroelectric memory device and the method for manufacturing the same according to the present invention, the space between the ferroelectric capacitors can be narrowed to reduce the area of the memory cell array and thus the ferroelectric memory device.

1 is a cross-sectional view in a word line direction of a ferroelectric memory device according to an embodiment of the present invention. 1 is a cross-sectional view in the bit line direction of a ferroelectric memory device according to an embodiment of the present invention. 7 is a cross-sectional view in the bit line direction of a ferroelectric memory device according to a modification of one embodiment of the present invention. FIG. (a)-(c) is sectional drawing which shows each process of the manufacturing method of the ferroelectric memory device based on one Embodiment of this invention. (a)-(c) is sectional drawing which shows each process of the manufacturing method of the ferroelectric memory device based on one Embodiment of this invention. It is sectional drawing of the conventional ferroelectric memory device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Semiconductor substrate 101 Element isolation region 102 Gate electrode 103A, 103B 1st high concentration impurity diffusion layer 104 2nd high concentration impurity diffusion layer 105 1st interlayer insulation film 106 1st contact plug 107 2nd contact plug 108 Conductive third hydrogen barrier film 109 Lower electrode 110 Upper electrode relay portion 111 Insulating second hydrogen barrier film 112 Capacitance insulating film 113 Upper electrode 114 Step mitigation film 115 First hydrogen barrier film 116 Second interlayer Insulating film 117 First metal wiring 118 Second metal wiring 119 Third contact plug 120 Fourth contact plug

Claims (17)

A plurality of ferroelectric capacitors having a lower electrode, a capacitor insulating film made of a ferroelectric film, and an upper electrode sequentially formed on an interlayer insulating film on a semiconductor substrate, and arranged in a word line direction and a bit line direction A ferroelectric memory device comprising:
A first hydrogen barrier film provided to cover the plurality of upper electrodes;
The first hydrogen barrier film is formed in the other direction of the word line direction and the bit line direction in the capacitor row composed of the plurality of ferroelectric capacitors arranged in one direction of the word line direction and the bit line direction. A ferroelectric memory device formed so as to cover a pair of adjacent capacitor rows.   An insulating second hydrogen barrier film embedded between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction among the plurality of ferroelectric capacitors is further provided. The ferroelectric memory device according to claim 1.   2. The ferroelectric memory device according to claim 1, wherein the upper electrode is formed in common for the plurality of ferroelectric capacitors arranged in the one direction.   The electroconductive third hydrogen barrier film formed between the contact plug and the lower electrode formed in the interlayer insulating film is further provided. Ferroelectric memory device.   A capacitor row composed of the plurality of ferroelectric capacitors arranged in one direction is completely covered by the first hydrogen barrier film, the second hydrogen barrier film, and the third hydrogen barrier film. 5. The ferroelectric memory device according to claim 4, wherein   The method further comprises a step mitigating film formed between the common upper electrode and the first hydrogen barrier film and mitigating a step formed on a peripheral edge of the common upper electrode. Item 4. The ferroelectric memory device according to Item 1. The second hydrogen barrier film is made of a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, or an oxide film or oxynitride film of an alloy of Ti and Al. The ferroelectric memory device according to claim 2. The first hydrogen barrier film is a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, a TiN film, an alloy film of Ti and Al, or an oxide film of an alloy of Ti and Al. 2. The ferroelectric memory device according to claim 1, comprising a nitride film or an oxynitride film.   5. The strong hydrogen film according to claim 4, wherein the third hydrogen barrier film is made of an alloy film of Ti and Al, a nitride film or an oxynitride film of an alloy of Ti and Al, or a TiN film. Dielectric memory device. A plurality of ferroelectric capacitors having a lower electrode, a capacitor insulating film made of a ferroelectric film, and an upper electrode sequentially formed on an interlayer insulating film on a semiconductor substrate, and arranged in a word line direction and a bit line direction A method for manufacturing a ferroelectric memory device comprising:
Forming lower electrodes of the plurality of ferroelectric capacitors on the interlayer insulating film;
Forming a capacitive insulating film on the lower electrode;
Forming an upper electrode on the capacitive insulating film;
The first hydrogen barrier film covers a plurality of the upper electrodes and includes a plurality of ferroelectric capacitors arranged in one direction of the word line direction and the bit line direction. Forming a pair of capacitor rows adjacent to each other in the bit line direction in another direction.   After the step of forming the lower electrode and before the step of forming the capacitive insulating film, after depositing an insulating second hydrogen barrier film on the interlayer insulating film and the lower electrode, Planarizing the second hydrogen barrier film, and embedding the second hydrogen barrier film between the lower electrodes of the plurality of ferroelectric capacitors arranged in one direction among the plurality of ferroelectric capacitors. The method of manufacturing a ferroelectric memory device according to claim 10, further comprising:   Prior to the step of forming the lower electrode, the method further includes a step of forming a conductive third hydrogen barrier film interposed between the contact plug formed in the interlayer insulating film and the lower electrode. 12. The method of manufacturing a ferroelectric memory device according to claim 10, wherein the ferroelectric memory device is a semiconductor memory device.   A capacitor row composed of the plurality of ferroelectric capacitors arranged in one direction is completely covered by the first hydrogen barrier film, the second hydrogen barrier film, and the third hydrogen barrier film. 13. The method of manufacturing a ferroelectric memory device according to claim 12, wherein Between the step of forming the upper electrode and the step of forming the first hydrogen barrier film, it is interposed between the upper electrode and the first hydrogen barrier film, and is formed at the peripheral edge of the upper electrode. 11. The method of manufacturing a ferroelectric memory device according to claim 10, further comprising a step of forming a step-reducing film that relieves the step. The second hydrogen barrier film is made of a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, or an oxide film or oxynitride film of an alloy of Ti and Al. A method for manufacturing a ferroelectric memory device according to claim 11. The first hydrogen barrier film is a Si ₃ N ₄ film, a SiON film, an Al ₂ O ₃ film, a TiO ₂ film, a TiN film, an alloy film of Ti and Al, or an oxide film of an alloy of Ti and Al. The method of manufacturing a ferroelectric memory device according to claim 10, comprising: a nitride film or an oxynitride film. 13. The strong hydrogen film according to claim 12, wherein the third hydrogen barrier film is made of an alloy film of Ti and Al, a nitride film or an oxynitride film of an alloy of Ti and Al, or a TiN film. A method of manufacturing a dielectric memory device.

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