JP2005093733A - Substrate treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multipurpose substrate treating device that can exhibit the cleaning effect corresponding to a new material or manufacturing process introduced to a semiconductor device and, in addition, can cope with the need to the cleaning technique which is considered to become higher in future as the further micronization and higher integration of the semiconductor device advance. <P>SOLUTION: The substrate treating device is provided with a substrate holder 3 which holds a substrate W, a head 12 disposed to face the substrate W held by the holder 3, and a treating liquid supplying source 27 which supplies a treating liquid between the substrate W held by the holder 3 and the head 12. On the surface of the head 12 facing the substrate W, an anode 21, a cathode 22, and an ultrasonic vibrator 20 which emits an ultrasonic wave toward the treating liquid are disposed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus that removes metals, organic substances such as polymers and resists, particles, and the like adhering to the surface of a substrate using electrical energy and ultrasonic waves.

  In the manufacturing process of semiconductor devices, a high degree of cleanliness is required, and cleaning techniques for removing dirt on a submicron basis are becoming increasingly important. In particular, with the progress of miniaturization and high integration of semiconductor devices, it is desired to realize a new cleaning technology corresponding to new materials and manufacturing processes being introduced into semiconductor devices.

New materials that are being introduced into semiconductor devices include metals such as Cu, Ru, Co, and Pt. Of these, Cu (copper) is likely to cause metal contamination, so that it is necessary to completely remove excess Cu remaining on the substrate. Cu is difficult to remove by the conventional RCA cleaning method, and is generally removed by using an HF processing solution. In addition, the cleaning method using ozone water (O ₃ ) can remove most metals, but cannot completely remove Cu.

  In recent years, with further miniaturization of semiconductor devices, there is a tendency to use a low-k material as an insulating film. With the introduction of this low-k material, removal of organic substances such as polymers and etching residues after etching the low-k material, and the inside of fine contact holes (wiring holes) formed in the low-k material A new cleaning technique that enables cleaning is desired. Since the hole diameter of a fine contact hole is extremely small, there has been a problem that cleaning defects are likely to occur inside the contact hole. In addition to this, it is further difficult to clean the contact hole due to further miniaturization of the contact hole diameter and the water repellency of the low-k material.

In addition, the ashing process using O ₂ plasma or the like damages the low-k material after the formation of the wiring hole, so that a resist stripping process using a new wet method is required instead. Furthermore, with the introduction of new materials and the miniaturization of semiconductor devices, the semiconductor device manufacturing process itself is changing. For this reason, realization of a new cleaning technique corresponding to a change in the manufacturing process is required. For example, with the introduction of new resist materials and changes in the etching process, the adhesion strength of polymers and resist residues to the underlayer such as insulating films may become higher than before, and these can be removed with conventional cleaning techniques. Is considered difficult.
Furthermore, even in the cleaning process around the gate in the previous process, it is expected that the removal performance of metals, organic substances and particles and prevention of re-adhesion after removal will become increasingly severe due to the miniaturization of devices and the adoption of new materials.

  The present invention has been made in view of the above circumstances, can provide a cleaning effect corresponding to new materials and manufacturing processes introduced into semiconductor devices, and further advances in miniaturization and high integration of semiconductor devices. Accordingly, it is an object of the present invention to provide a multi-purpose substrate processing apparatus that can meet the needs for cleaning technologies that are expected to increase in the future.

In order to achieve the above-described object, the present invention provides a substrate holding unit that holds a substrate, a head that is disposed so as to face the substrate held by the substrate holding unit, and a substrate held by the substrate holding unit. And a treatment liquid supply source for supplying a treatment liquid between the head and the head, and an anode electrode portion and a cathode electrode portion on a surface facing the substrate of the head, and an ultrasonic wave for irradiating the treatment liquid with ultrasonic waves A substrate processing apparatus in which a sound wave vibrator is disposed.
In a preferred aspect of the present invention, a relative movement mechanism that moves the head relative to the substrate is provided.
In a preferred aspect of the present invention, the relative movement mechanism rotates the head.
In a preferred aspect of the present invention, a pulse power supply for applying a pulse voltage between the anode electrode portion and the cathode electrode portion is further provided.

  According to the present invention, a positive potential is applied to the conductive substance (object to be processed) existing on the surface of the substrate by a so-called bipolar phenomenon, and the conductive substance can be oxidized and electrically dissolved. Furthermore, the present invention provides non-conductive particles and organic system attachment by irradiating ultrasonic waves to bubbles made of oxygen gas or ozone gas generated from the anode electrode part during electrolytic treatment even when no conductive material is present on the substrate surface. Kimono can be washed efficiently. The principle of the present invention will be described below.

  When a voltage is applied between the anode electrode portion and the cathode electrode portion, oxygen gas or ozone gas is generated from the anode electrode portion and stays as bubbles in the processing liquid. Such bubbles can be miniaturized by applying a pulse voltage between the anode electrode portion and the cathode electrode portion, or by mixing a surfactant in the treatment liquid.

Bubbles having a diameter of 20 μm or less, particularly 1 to 10 μm, exhibit the following characteristics.
(1) The coalescence of bubbles does not occur, the bubbles remain independent in the liquid for a long time and hardly disappear.
(2) Since the rising speed of the bubbles is extremely slow, it is excellent in diffusibility in the horizontal direction, and the bubbles are easily distributed uniformly in the liquid.
(3) In addition to staying in the liquid for a long time, the number of bubbles (bubble content rate) contained in the liquid per unit volume increases, and the surface area of the bubbles contained in the liquid per unit volume increases. If the bubbles are further miniaturized, the bubble content is further increased.
(4) Since the bubbles are charged, they have adsorptivity to suspended matters in the liquid.
(5) Depending on the surface tension of the bubble, the ultrasonic wave is reflected on the surface of the bubble.

In order to effectively use minute bubbles (hereinafter referred to as microbubbles) having such characteristics for the substrate cleaning process, in the present invention, ultrasonic waves are intermittently applied to the microbubbles in the processing liquid. The following effects can be obtained by irradiating the microbubbles with ultrasonic waves.
(I) When the microbubbles are irradiated with ultrasonic waves, the microbubbles are destroyed and a microjet flow is generated in the processing liquid. Using the energy of the microjet flow, particles attached to the substrate can be removed. In addition, when the microbubbles are destroyed, the gas that forms the microbubbles dissolves in a high concentration in the processing solution, and thus, by using the chemical properties of the gas, metals and organic substances that adhere to the substrate, etc. Can be removed.
(Ii) When the surface tension of the microbubbles is strong, the microbubbles are stirred without being broken. Therefore, the microbubbles can be diffused widely in the processing liquid, and particles and the like can be adsorbed on the surface of the microbubbles.
(Iii) Ultrasonic waves are irregularly reflected on the surface of the microbubble, so that it is possible to irradiate the ultrasonic wave to the finely processed portion such as a contact hole formed on the surface of the substrate, and the particles adhering to the finely processed portion. Etc. can be removed.
(Iv) Although the cavitation type microbubble generated by the cavitation phenomenon due to the ultrasonic irradiation easily damages the device due to the impact at the time of destruction, the present invention does not generate the microbubble by the ultrasonic energy. It is possible to set the frequency to an area where there is no device damage.

  According to the present invention, a cleaning effect by electrolytic treatment, a cleaning effect by microbubbles, and a cleaning effect by ultrasonic waves are combined, and various objects to be processed such as particles, metals, and organic substances are removed from the substrate with high efficiency. be able to.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a cross-sectional view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
As shown in FIG. 1, the substrate processing apparatus includes a substrate holding unit 3 that holds a semiconductor wafer (substrate) W, a support shaft 4 that is fixed to the lower part of the substrate holding unit 3, and a lower part of the substrate holding unit 3. And an arranged container 5.

  The substrate holding unit 3 includes a circular substrate holding table 6 and a plurality of support pins 7 provided on the upper surface of the substrate holding table 6. The support pins 7 are arranged at equal intervals along the circumferential direction of the substrate holding table 6, and the peripheral edge of the semiconductor wafer W is supported by these support pins 7. Note that the semiconductor wafer W can be held by using a holding mechanism such as a vacuum chuck or an electrostatic chuck instead of the support pins 7.

  The substrate processing apparatus according to the present embodiment includes an arm 11 that can move up and down and can swing on a horizontal plane, and a head 12 that is fixed to an end of the arm 11. The head 12 is disposed so as to face the semiconductor wafer W held by the substrate holding unit 3. A motor 14 is connected to the shaft portion 11a of the arm 11 via a power transmission mechanism 13, and the head 12 swings along the arrow A direction shown in FIG. A motor 8 is fixed to the free end of the arm 11, and the motor 8 is connected to a rotating shaft 15 of the head 12. Then, by driving the motor 8, the head 12 rotates concentrically with the semiconductor wafer W via the rotation shaft 15. The motor 8 constitutes a relative movement mechanism that relatively moves the head 12 and the semiconductor wafer W.

  An air cylinder 16 is connected to the lower end of the shaft 11 a of the arm 11. The air cylinder 16 is connected to a compressed air source (not shown), and the air cylinder 16 is driven by the compressed air supplied from the compressed air source. Therefore, the head 12 moves up and down by the air cylinder 16 via the shaft portion 11 a and the arm 11. The head 12 can be lowered to a position where the distance between the semiconductor wafer W held by the substrate holder 3 and the lower end of the head 12 is about 1 mm.

Next, the configuration of the head 12 described above will be described in detail with reference to FIGS. FIG. 3 is a view showing the lower surface of the head shown in FIG. 4 is a cross-sectional view taken along line IV-IV in FIG.
As shown in FIG. 3, the head 12 is formed in a circular shape. On the lower surface of the head 12, a plurality of anode electrode portions 21 and a plurality of cathode electrode portions 22, and an ultrasonic transducer 20 that irradiates ultrasonic waves toward the processing liquid are arranged.

  Both the anode electrode part 21 and the cathode electrode part 22 are regularly arranged according to a predetermined pattern. That is, as shown in FIG. 3, the cathode electrode portions 22 are arranged over the entire first region, and are arranged at equal intervals in the vertical direction and the horizontal direction. The anode electrode portion 21 is disposed at a central portion between the cathode electrode portions 22 adjacent to each other in the oblique direction.

  Each cathode electrode portion 22 is formed inside a protruding portion 12a having a rectangular section protruding downward, and the anode electrode portion 21 is arranged in a lattice-shaped groove 12b formed between these protruding portions 12a. Yes. As shown in FIG. 4, a step of α mm is provided between the anode electrode portion 21 and the cathode electrode portion 22. Therefore, when the distance between the upper surface of the semiconductor wafer W held on the substrate holding portion 3 and the cathode electrode portion 22 is about 1 mm, the distance between the anode electrode portion 21 and the upper surface of the semiconductor wafer W is about (1 + α) mm. Become.

  As shown in FIG. 4, the anode electrode portion 21 is electrically connected to the anode of the pulse power source 32 via the wiring 31, and the cathode electrode portion 22 is electrically connected to the cathode of the pulse power source 32 via the wiring 33. It is connected. The pulse power supply 32 applies a pulse voltage having a predetermined frequency to the anode electrode portion 21 and the cathode electrode portion 22. In addition, the pulse voltage here means not a continuous DC voltage used in a normal electrochemical reaction but a voltage (potential) that varies periodically.

  The cathode electrode part 22 is provided with a supply port 25 penetrating the center part. These supply ports 25 are all connected to a processing liquid supply source 27 through a pipe 26. The processing liquid is stored in the processing liquid supply source 27, and this processing liquid is supplied to the upper surface of the semiconductor wafer W from the supply port 25 through the pipe 26. The anode electrode portion 21 is formed with a suction port 29 penetrating the central portion thereof, and the suction port 29 is connected to a suction source (not shown) through a pipe 28. The processing liquid supplied to the upper surface of the semiconductor wafer W is sucked from the suction port 29 by the suction source and discharged out of the system. As shown in FIG. 4, the processing liquid 2 supplied to the upper surface of the semiconductor wafer W fills between the semiconductor wafer W and the head 12 by surface tension. At this time, a part of the processing liquid 2 flows out from the peripheral edge of the semiconductor wafer W, but this processing liquid 2 is collected by a container 5 (see FIG. 1) provided below the substrate holding unit 3.

FIG. 5 is an enlarged cross-sectional view of the anode electrode portion and the cathode electrode portion shown in FIG. In addition, the arrow shown in FIG. 5 represents the flow of the processing liquid.
As shown in FIG. 5, the treatment liquid is supplied to the upper surface of the semiconductor wafer W from the supply port 25 provided in the cathode electrode portion 22, and after flowing through the upper surface of the semiconductor wafer W, the suction port provided in the anode electrode portion 21. 29 is inhaled. In this way, the processing liquid is supplied between the semiconductor wafer W and the head 12.

The processing liquid used in the substrate processing apparatus of this embodiment is composed of a solvent such as water (ultra pure water) and alcohol, an electrolyte such as HCl and NH ₃ OH, and an additive such as an ionic surfactant. Basically composed. The purpose of adding the electrolyte to the treatment liquid is mainly to impart conductivity to the treatment liquid. Further, the pH can be adjusted by adding an electrolyte to the treatment liquid, and the removal action of the object to be treated can be promoted. That is, if the pH is lowered, the oxidation-reduction potential increases and a strong oxidizing power can be obtained. On the other hand, if the treatment liquid is made alkaline by raising the pH, the zeta potential, which is a factor for adsorbing particles, can be lowered, and the particles can be effectively removed. In addition, when a halide having strong oxidizing power such as HCl is used as an electrolyte, a part of the halide is ionized in the treatment liquid to become a halogen ion, which reacts with the workpiece to be removed and reacts with the workpiece to be removed. The treated product can be oxidized.

FIG. 6 is an enlarged cross-sectional view for explaining how copper remaining on the surface of a semiconductor wafer (substrate) is removed by the substrate processing apparatus according to the present embodiment.
As shown in FIG. 6, when a voltage is applied between the anode electrode part 21 and the cathode electrode part 22 in the presence of a treatment solution containing an electrolyte, the portion of the copper 50 adjacent to the anode electrode part 21 becomes a negative potential. The portion of the copper 50 adjacent to the cathode electrode portion 22 has a positive potential. This phenomenon is called a bipolar phenomenon. An oxidation reaction occurs at the site of copper 50 to which a positive potential is applied (Cu → Cu ²⁺ + 2e ⁻ ), and H ₂ is generated at the site of copper 50 to which a negative potential is applied. Inside the copper 50, a potential difference is generated and electrons (e ⁻ ) move. In this way, electrolytic treatment (electrolytic etching) proceeds at the positively charged copper 50 portion, and the copper 50 to be treated is dissolved.

As materials for the anode electrode portion 21 and the cathode electrode portion 22, conductive diamond, lead dioxide (PbO ₂ ), platinum (Pt), or the like is used. In this embodiment, conductive diamond is used. The reason is as follows. The voltage at which O ₂ starts to be generated from the anode electrode portion 21 (hereinafter referred to as oxygen overvoltage) depends on the degree of catalytic activity of the material constituting the anode electrode portion 21. The oxygen overvoltage increases in the order of platinum (Pt) <lead dioxide (PbO ₂ ) <conductive diamond. Therefore, by using conductive diamond as the material of the anode electrode portion 21, the generation of O ₂ in the anode electrode portion 21 is suppressed and the generation ratio of O ₃ is increased.

In general, ozone water (O ₃ ) may be used to remove a polymer or resist material attached to the semiconductor wafer W. The conventional stand-alone ozone water production apparatus has a problem that the concentration of O ₃ decreases while the ozone water is guided to the semiconductor wafer W, and a desirable oxidizing power cannot be obtained. In this embodiment, by using conductive diamond as the material of the anode electrode portion 21, O ₃ can be generated in the very vicinity of the semiconductor wafer W, and the generated O ₃ has an oxidizing power as a polymer or resist material. It can be effectively used to remove organic substances such as. In addition, the oxidizing power of active oxygen species such as O, O ₂ ⁻ , and O ₃ ⁻ generated in the anode electrode portion 21 can be used.

Here, the principle of generating microbubbles in the processing liquid by using a pulse voltage will be described. As described above, when conductive diamond is used as the material of the anode electrode portion 21 and the cathode electrode portion 22, O ₂ and O ₃ are generated as bubbles from the anode electrode portion 21. When a DC voltage is applied between the anode electrode portion 21 and the cathode electrode portion 22, bubbles of O ₂ and O ₃ generated in the anode electrode portion 21 grow to generate microbubbles having a small diameter. I can't do that.

  On the other hand, when a pulse voltage is applied between the anode electrode portion 21 and the cathode electrode portion 22, the bubbles are separated from the anode electrode portion 21 before the bubbles generated in the anode electrode portion 21 grow large. be able to. Therefore, it is possible to generate microbubbles having a small diameter. In addition, it is preferable that the diameter of a microbubble is 20 micrometers or less, Furthermore, it is preferable that it is 1-10 micrometers. In addition, the frequency of the pulse voltage is preferably low to some extent so that the bubbles generated in the anode electrode portion 21 grow away from the anode electrode portion 21 before they grow large. That is, the pulse voltage preferably has a frequency that can generate microbubbles having the above diameter.

Next, the ultrasonic transducer 20 provided in the substrate processing apparatus according to this embodiment will be described.
As shown in FIG. 3, each of the ultrasonic transducers 20 has a fan shape and is arranged symmetrically with respect to the center portion of the head 12. A power source (not shown) is connected to these ultrasonic transducers 20, and a high-frequency AC voltage is applied to the ultrasonic transducers 20 from this power source. The ultrasonic transducer 20 converts a periodic electrical signal supplied from a power source into mechanical vibration, thereby generating ultrasonic vibration. As the ultrasonic transducer 20, an electrostrictive transducer represented by barium titanate or lead zirconate titanate, or a magnetostrictive transducer represented by ferrite is preferably used.

As shown in FIG. 3, the ultrasonic transducer 20 is disposed adjacent to a region where the anode electrode portion 21 and the cathode electrode portion 22 are disposed. When the processing liquid is supplied onto the semiconductor wafer W from the supply port 25 (see FIG. 4) while rotating the head 12 via the motor 8 (see FIG. 1), the processing liquid is transferred to the semiconductor wafer as the head 12 rotates. Spread over the entire surface of W. Then, ultrasonic waves are irradiated from the ultrasonic transducer 20 toward the processing liquid that fills between the semiconductor wafer W and the head 12. At this time, as described above, microbubbles made of O ₂ or O ₃ stay in the processing liquid, and the ultrasonic waves from the ultrasonic transducer 20 are irradiated to the microbubbles.

When ultrasonic waves are applied to the microbubbles, the microbubbles are agitated by the energy of the ultrasonic waves, and the microbubbles diffuse throughout the processing liquid. A part of the microbubbles is destroyed by ultrasonic irradiation, and a microjet flow is formed in the treatment liquid 2. Particles and the like attached on the semiconductor wafer W are removed by the physical energy of the microjet flow. Further, when the microbubbles are destroyed, O ₂ and O ₃ forming the micro bubbles are dissolved in the treatment liquid at a high concentration. In particular, high-concentration O ₃ has a strong oxidizing power, and organic substances such as resist materials and polymers on the semiconductor wafer W can be removed using this oxidizing power.

  In addition, the microbubbles floating in the processing liquid without being destroyed can be used for removing particles floating in the processing liquid and particles remaining on the semiconductor wafer W. That is, particles can be adsorbed on the surface of the microbubbles and removed by using the charging property of the microbubbles. Furthermore, the ultrasonic wave can be irradiated to the finely processed portion (device) formed on the semiconductor wafer W by irregularly reflecting the surface of the microbubble. As described above, according to the substrate processing apparatus according to the present embodiment, the cleaning effect by the electrolytic treatment, the cleaning effect by the microbubbles, and the cleaning effect by the ultrasonic wave are combined, so that various kinds of objects to be processed such as particles, metals, organic substances, etc. Objects can be removed from the semiconductor wafer W with high efficiency.

  After the series of cleaning processes is completed, the processing liquid adhering to the head 12 can be removed by centrifugal action by rotating the head 12 at a high speed. During the cleaning process, the head 12 is preferably swung while being rotated. Thus, by moving the head 12 and the semiconductor wafer W relative to each other, the center of the semiconductor wafer W can be irradiated with ultrasonic waves, and uniform processing can be performed over the entire semiconductor wafer W. Become. In this case, the motor 14 that swings the head 12, the arm 11, and the power transmission mechanism 13 together with the motor 8 that rotates the head 12 constitute a relative movement mechanism. The head 12 may be reciprocated on the semiconductor wafer W.

  The frequency of the ultrasonic wave irradiated from the ultrasonic transducer 20 is preferably 5 MHz or more and 100 MHz or less. More preferably, the frequency is 10 MHz or more and 50 MHz or less. With future device miniaturization, ultrasonic waves in the frequency band of 1 to 5 MHz may damage the device. On the other hand, the ultrasonic wave in the frequency band of 10 to 50 MHz does not cause damage to the device formed on the semiconductor wafer W. Further, in the case of ultrasonic waves of 100 MHz or higher, the energy for moving the microbubbles in the processing liquid is scarce and the cleaning effect is reduced. For this reason, the ultrasonic frequency is set to 5 to 100 MHz, preferably 10 to 50 MHz.

  Next, a substrate processing system incorporating the substrate processing apparatus according to the present invention will be described in detail with reference to FIG. FIG. 7 is a plan view showing a configuration of a substrate processing system including a substrate processing apparatus according to the present invention.

  As shown in FIG. 7, this substrate processing system includes a pair of load / unload units 37 for loading / unloading a cassette (not shown) containing a semiconductor wafer W on which copper as a processing object is formed. The apparatus includes four substrate processing apparatuses 1, a transfer robot 38 that transfers a semiconductor wafer W, and a housing 39 that accommodates these devices. A transport rail 40 is disposed at the center of the housing 39, and the transport robot 38 can freely move on the transport rail 40. Two substrate processing apparatuses 1 are disposed on both sides of the transport rail 40, and the load / unload unit 37 is disposed near the end of the transport rail 40. Between the load / unload unit 37 and the substrate processing apparatus 1, the transfer of the semiconductor wafer W is performed by the transfer robot 38.

Next, the operation of the substrate processing system configured as described above will be described.
The cassette containing the semiconductor wafer W is set in the load / unload unit 37, and one semiconductor wafer W is taken out from the cassette by the transfer robot 38. The transfer robot 38 transfers the semiconductor wafer W to the substrate processing apparatus 1 and holds it on the substrate holding unit 3 (see FIG. 1) of the substrate processing apparatus 1. Until the semiconductor wafer W is held by the substrate holder 3, the head 12 stands by at the retracted position indicated by the dotted line in FIG. 2. Then, after the semiconductor wafer W is held by the substrate holder 3, the head 12 (see FIG. 1) moves to the vicinity of the upper surface of the semiconductor wafer W, and the substrate is cleaned. Since the operation of the substrate processing apparatus 1 is as described above, the description thereof is omitted here.

  After completion of the cleaning process, the head 12 moves to the retreat position described above, and the semiconductor wafer W held on the substrate holding unit 3 is returned to the cassette of the load / unload unit 37 by the transfer robot 38. Since this substrate processing system includes four substrate processing apparatuses 1, a plurality of semiconductor wafers W can be continuously cleaned.

It is sectional drawing which shows the whole structure of the substrate processing apparatus which concerns on one Embodiment of this invention. 1 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention. It is a figure which shows the lower surface of the head shown in FIG. It is the IV-IV sectional view taken on the line of FIG. It is an expanded sectional view of the anode electrode part and cathode electrode part which are shown in FIG. It is an expanded sectional view for demonstrating a mode that the copper which remains on the surface of a board | substrate is removed by the substrate processing apparatus which concerns on one Embodiment of this invention. It is a top view which shows the structure of the substrate processing system provided with the substrate processing apparatus which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Processing liquid 3 Substrate holding part 4 Support shaft 5 Container 6 Substrate holding table 7 Support pin 8, 14 Motor 11 Arm 12 Head 13 Power transmission mechanism 15 Rotating shaft 16 Air cylinder 20 Ultrasonic vibrator 21 Anode electrode part 22 Cathode electrode section 25 Supply port 26, 28 Piping 27 Processing liquid supply source 29 Suction port 31, 33 Wiring 32 Power supply 37 Load / unload section 38 Transfer robot 39 Housing 40 Transfer rail 50 Object to be processed (copper)

Claims (4)

A substrate holder for holding the substrate;
A head arranged to face the substrate held by the substrate holding unit;
A treatment liquid supply source that supplies a treatment liquid between the substrate held by the substrate holding unit and the head;
A substrate processing apparatus, comprising: an anode electrode portion; a cathode electrode portion; and an ultrasonic transducer for irradiating an ultrasonic wave toward a processing liquid on a surface of the head facing the substrate.   The substrate processing apparatus according to claim 1, further comprising a relative movement mechanism that moves the head relative to the substrate.   The substrate processing apparatus according to claim 2, wherein the relative movement mechanism rotates the head.   4. The substrate processing apparatus according to claim 1, further comprising a pulse power supply that applies a pulse voltage between the anode electrode portion and the cathode electrode portion.

Images