JP2005082435A - SiC単結晶の製造方法 - Google Patents
SiC単結晶の製造方法 Download PDFInfo
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- JP2005082435A JP2005082435A JP2003315361A JP2003315361A JP2005082435A JP 2005082435 A JP2005082435 A JP 2005082435A JP 2003315361 A JP2003315361 A JP 2003315361A JP 2003315361 A JP2003315361 A JP 2003315361A JP 2005082435 A JP2005082435 A JP 2005082435A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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Abstract
【解決手段】 黒鉛るつぼ内のSi融液内に内部から融液面に向けて温度低下する温度勾配を維持しつつ、該融液面の直下に保持したSiC種結晶を起点としてSiC単結晶を成長させる方法において、上記Si融液に、Al、Ga、In、As、Sb、Au、AgおよびPtから成る群から選択したいずれか1種の金属を1wt%〜30wt%添加することを特徴とするSiC単結晶の製造方法。
【選択図】 図2
Description
上記Si融液に、Al、Ga、In、As、Sb、Au、AgおよびPtから成る群から選択したいずれか1種の金属を1wt%〜30wt%添加することを特徴とするSiC単結晶の製造方法によって達成される。上記各金属の添加量はSi融液と添加金属との合計量を基準とした量である。
図示したSiC単結晶製造炉100は、黒鉛るつぼ10内のSi融液M内に内部から融液面Sへ向けて温度低下する温度勾配を維持しつつ、融液面Sの直下に黒鉛棒12により保持したSiC種結晶14を起点としてSiC単結晶を成長させる炉である。
10…黒鉛るつぼ
12…黒鉛棒
14…SiC種結晶
18…断熱材
20…石英管
22…誘導コイル
22A…誘導コイル22の上段コイル
22B…誘導コイル22の下段コイル
24…磁場コイル
M…Si融液
S…融液面
Claims (1)
- 黒鉛るつぼ内のSi融液内に内部から融液面に向けて温度低下する温度勾配を維持しつつ、該融液面の直下に保持したSiC種結晶を起点としてSiC単結晶を成長させる方法において、
上記Si融液に、Al、Ga、In、As、Sb、Au、AgおよびPtから成る群から選択したいずれか1種の金属を1wt%〜30wt%添加することを特徴とするSiC単結晶の製造方法。
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JP2005082435A true JP2005082435A (ja) | 2005-03-31 |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006137500A1 (ja) * | 2005-06-20 | 2006-12-28 | Toyota Jidosha Kabushiki Kaisha | 炭化珪素単結晶の製造方法 |
JP2007186374A (ja) * | 2006-01-12 | 2007-07-26 | Toyota Motor Corp | SiC単結晶の製造方法 |
WO2007094155A1 (ja) * | 2006-01-24 | 2007-08-23 | Toyota Jidosha Kabushiki Kaisha | SiC単結晶の製造方法 |
WO2007116315A1 (en) * | 2006-04-07 | 2007-10-18 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing a silicon carbide single crystal |
JP2008303125A (ja) * | 2007-06-11 | 2008-12-18 | Toyota Motor Corp | SiC単結晶の製造方法 |
JP2009091222A (ja) * | 2007-10-11 | 2009-04-30 | Sumitomo Metal Ind Ltd | SiC単結晶の製造方法、SiC単結晶ウエハ及びSiC半導体デバイス |
WO2009090536A1 (en) * | 2008-01-15 | 2009-07-23 | Toyota Jidosha Kabushiki Kaisha | Method for growing silicon carbide single crystal |
DE112009000196T5 (de) | 2008-01-29 | 2011-01-27 | Toyota Jidosha Kabushiki Kaisha, Toyota | Verfahren zum Wachsen eines P-SiC-Halbleitereinkristalls und P-SiC-Halbleitereinkristall |
US8123857B2 (en) | 2008-02-06 | 2012-02-28 | Toyota Jidosha Kabushiki Kaisha | Method for producing p-type SiC semiconductor single crystal |
JP2012136388A (ja) * | 2010-12-27 | 2012-07-19 | Sumitomo Metal Ind Ltd | SiC単結晶の製造装置及びそれに用いられる坩堝 |
JP2012180244A (ja) * | 2011-03-02 | 2012-09-20 | Toyota Motor Corp | 半導体単結晶の製造装置および製造方法 |
JP2014088290A (ja) * | 2012-10-31 | 2014-05-15 | Kyocera Corp | 結晶の製造方法 |
WO2014103539A1 (ja) * | 2012-12-27 | 2014-07-03 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
CN104603336A (zh) * | 2012-08-30 | 2015-05-06 | 丰田自动车株式会社 | SiC单晶体的制造方法 |
JP2015110496A (ja) * | 2013-12-06 | 2015-06-18 | 信越化学工業株式会社 | 炭化珪素の結晶成長方法 |
US9512540B2 (en) | 2010-11-09 | 2016-12-06 | Nippon Steel & Sumitomo Metal Corporation | Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere |
US9945047B2 (en) | 2013-12-06 | 2018-04-17 | Shin-Etsu Chemical Co., Ltd. | Method for growing silicon carbide crystal |
US11440849B2 (en) | 2015-08-06 | 2022-09-13 | Shin-Etsu Chemical Co., Ltd. | SiC crucible, SiC sintered body, and method of producing SiC single crystal |
-
2003
- 2003-09-08 JP JP2003315361A patent/JP4196791B2/ja not_active Expired - Fee Related
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100897312B1 (ko) | 2005-06-20 | 2009-05-14 | 도요타 지도샤(주) | 탄화규소단결정의 제조방법 |
WO2006137500A1 (ja) * | 2005-06-20 | 2006-12-28 | Toyota Jidosha Kabushiki Kaisha | 炭化珪素単結晶の製造方法 |
US8052793B2 (en) | 2005-06-20 | 2011-11-08 | Toyota Jidosha Kabushiki Kaisha | Method for producing silicon carbide single crystal |
JP2007186374A (ja) * | 2006-01-12 | 2007-07-26 | Toyota Motor Corp | SiC単結晶の製造方法 |
WO2007094155A1 (ja) * | 2006-01-24 | 2007-08-23 | Toyota Jidosha Kabushiki Kaisha | SiC単結晶の製造方法 |
WO2007116315A1 (en) * | 2006-04-07 | 2007-10-18 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing a silicon carbide single crystal |
KR101070412B1 (ko) | 2006-04-07 | 2011-10-06 | 도요타 지도샤(주) | 탄화 규소 단결정 제조 방법 |
US8118933B2 (en) | 2006-04-07 | 2012-02-21 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing a silicon carbide single crystal |
JP2008303125A (ja) * | 2007-06-11 | 2008-12-18 | Toyota Motor Corp | SiC単結晶の製造方法 |
JP2009091222A (ja) * | 2007-10-11 | 2009-04-30 | Sumitomo Metal Ind Ltd | SiC単結晶の製造方法、SiC単結晶ウエハ及びSiC半導体デバイス |
WO2009090536A1 (en) * | 2008-01-15 | 2009-07-23 | Toyota Jidosha Kabushiki Kaisha | Method for growing silicon carbide single crystal |
DE112009000360B4 (de) * | 2008-01-15 | 2015-06-18 | Toyota Jidosha Kabushiki Kaisha | Verfahren zum Wachsen eines Siliziumkarbideinkristalls |
US8287644B2 (en) | 2008-01-15 | 2012-10-16 | Toyota Jidosha Kabushiki Kaisha | Method for growing silicon carbide single crystal |
US8470698B2 (en) | 2008-01-29 | 2013-06-25 | Toyota Jidosha Kabushiki Kaisha | Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystal |
DE112009000196T5 (de) | 2008-01-29 | 2011-01-27 | Toyota Jidosha Kabushiki Kaisha, Toyota | Verfahren zum Wachsen eines P-SiC-Halbleitereinkristalls und P-SiC-Halbleitereinkristall |
US8123857B2 (en) | 2008-02-06 | 2012-02-28 | Toyota Jidosha Kabushiki Kaisha | Method for producing p-type SiC semiconductor single crystal |
US9512540B2 (en) | 2010-11-09 | 2016-12-06 | Nippon Steel & Sumitomo Metal Corporation | Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere |
JP2012136388A (ja) * | 2010-12-27 | 2012-07-19 | Sumitomo Metal Ind Ltd | SiC単結晶の製造装置及びそれに用いられる坩堝 |
JP2012180244A (ja) * | 2011-03-02 | 2012-09-20 | Toyota Motor Corp | 半導体単結晶の製造装置および製造方法 |
EP2891732A4 (en) * | 2012-08-30 | 2015-11-04 | Toyota Motor Co Ltd | METHOD FOR PRODUCING A SIC-EINKRISTALLS |
CN104603336A (zh) * | 2012-08-30 | 2015-05-06 | 丰田自动车株式会社 | SiC单晶体的制造方法 |
US9530642B2 (en) | 2012-08-30 | 2016-12-27 | Toyota Jidosha Kabushiki Kaisha | Method for producing SiC single crystal |
JP2014088290A (ja) * | 2012-10-31 | 2014-05-15 | Kyocera Corp | 結晶の製造方法 |
WO2014103539A1 (ja) * | 2012-12-27 | 2014-07-03 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
CN104884683A (zh) * | 2012-12-27 | 2015-09-02 | 丰田自动车株式会社 | SiC单晶的制造方法 |
KR101679157B1 (ko) * | 2012-12-27 | 2016-11-23 | 도요타 지도샤(주) | SiC 단결정의 제조 방법 |
KR20150063487A (ko) * | 2012-12-27 | 2015-06-09 | 도요타 지도샤(주) | SiC 단결정의 제조 방법 |
CN104884683B (zh) * | 2012-12-27 | 2017-05-03 | 丰田自动车株式会社 | SiC单晶的制造方法 |
US9708734B2 (en) | 2012-12-27 | 2017-07-18 | Toyota Jidosha Kabushiki Kaisha | Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution |
JP2015110496A (ja) * | 2013-12-06 | 2015-06-18 | 信越化学工業株式会社 | 炭化珪素の結晶成長方法 |
US9945047B2 (en) | 2013-12-06 | 2018-04-17 | Shin-Etsu Chemical Co., Ltd. | Method for growing silicon carbide crystal |
US9951439B2 (en) | 2013-12-06 | 2018-04-24 | Shin-Etsu Chemical Co., Ltd. | Method for growing silicon carbide crystal |
US11440849B2 (en) | 2015-08-06 | 2022-09-13 | Shin-Etsu Chemical Co., Ltd. | SiC crucible, SiC sintered body, and method of producing SiC single crystal |
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