JP2005072372A - Substrate treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treating device which can be appropriately used in a process for sequentially supplying different types of chemicals to a substrate and capable of fractionally recovering these chemicals. <P>SOLUTION: Splash guards 7, 8 are provided in double loop over a treating cup 5 for housing a spin chuck 1, and the spin chuck 1 and the outside splash guard 8 capable of moving upwards and downwards are composed. A chemical capturing part 72 for capturing an alkaline chemicals scattered from a wafer W and a rinse agent capturing part 71 for capturing the rinse agent including the alkaline chemicals scattered from the wafer W are formed on an inner surface of the splash guard 7. A chemical capturing part 82 for capturing an acid chemicals scattered from the wafer W and a rinse agent capturing part 81 for capturing the rinse agent including the acid chemicals scattered from the wafer W are formed on an inner surface of the splash guard 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma displays, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, and the like. .

  In the manufacturing process of a semiconductor device or a liquid crystal display device, a single-wafer type substrate processing apparatus that processes the substrates one by one is used to treat the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel with a chemical solution. May be. In this type of substrate processing apparatus, in order to reduce the consumption of the chemical solution, the chemical solution used for the substrate processing is collected, and the collected chemical solution (recovered solution) is reused for the subsequent processing. Some are configured to be available.

  A substrate processing apparatus having a configuration in which a chemical solution can be reused is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-172950. As shown in FIG. 6, the apparatus disclosed in Patent Document 1 holds a semiconductor wafer (hereinafter simply referred to as “wafer”) W as an example of a substrate substantially horizontally so that the center of the wafer W is centered. A spin chuck 91 that rotates about a vertical axis passing therethrough, a bottomed cylindrical processing cup 92 that accommodates the spin chuck 91, and a splash guard 93 that can be moved up and down with respect to the processing cup 92 are provided.

  A cylindrical partition wall 921 is erected on the bottom surface of the processing cup 92, and the spin chuck 91 is accommodated inside the partition wall 921. As a result, a drainage groove 922 is formed in the processing cup 92 so as to surround the spin chuck 1, and a recovery groove 924 is formed between the partition wall 921 and the outer wall 923 of the processing cup 92. The drainage groove 922 is connected to a drainage line 94 extending to a drainage treatment facility (not shown), and the recovery groove 924 is connected to a recovery line 95 extending to a recovery liquid treatment facility (not shown). Has been.

  The splash guard 93 has a shape that is substantially rotationally symmetric with respect to the rotation axis of the wafer W, and a drainage trapping portion having a square cross section that is open on the inner surface so as to face the rotation axis of the wafer W. 931 and a recovery liquid capturing part 932 having an inclined curved surface that goes downward as it moves away from the rotation axis of the wafer W are formed. Further, the splash guard 93 is coupled with a vertical drive mechanism, and the splash guard 93 is moved up and down by the vertical drive mechanism, so that the drainage trap 931 is placed on the end surface of the wafer W held by the spin chuck 91. It can be made to oppose and the collection | recovery liquid capture part 932 can be made to oppose.

  When the chemical treatment is performed on the wafer W, the collected liquid capturing unit 932 is opposed to the end surface of the wafer W held on the spin chuck 91. In this state, the chemical liquid is supplied to the surface of the rotating wafer W while the wafer W is rotated by the spin chuck 91. The chemical solution supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W, flows toward the periphery of the wafer W, and scatters outward from the periphery (in the rotational radius direction of the wafer W). Then, the chemical liquid splashed from the peripheral edge of the wafer W is captured by the recovery liquid capture unit 932 facing the end surface of the wafer W, travels through the recovery liquid capture unit 932, and is processed from the lower end edge of the recovery liquid capture unit 932 to the processing cup. The collected liquid flows down to the collecting groove 924 of 92 and is collected by the collecting liquid processing facility through the collecting line 95 connected to the collecting groove 924.

Thereafter, a rinsing process is performed in which pure water is supplied to the surface of the wafer W to wash away the chemical solution adhering to the surface of the wafer W with pure water. At the time of this rinsing process, the splash guard 93 is lowered, and the drainage trap 931 is made to face the end surface of the wafer W. In this state, pure water is supplied to the surface of the rotating wafer W. The pure water supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows toward the periphery of the wafer W, and at this time, the chemical solution adhering to the surface of the wafer W is washed away. The pure water containing the chemical liquid scatters outward from the periphery of the wafer W, and is captured by the drainage capture unit 931 facing the end surface of the wafer W at this time, and travels through the drainage capture unit 931. It flows down to the drainage groove 922 of the processing cup 92 and is discarded to the drainage treatment facility through the drainage line 94 connected to the drainage groove 922.
Japanese Patent Laid-Open No. 10-172950

  The apparatus disclosed in Patent Document 1 can be suitably used when processing one type of chemical liquid on the wafer W, but sequentially supplies different types of chemical liquids to the wafer W. It is not preferable to use it for the processing to be performed. This is because in the apparatus disclosed in Patent Document 1, when different types of chemical solutions are sequentially supplied to the wafer W, the splash guard 93 to which the chemical solution previously supplied to the wafer W is attached is another type of chemical solution. This is because there is a risk of inconvenience caused by exposure to the atmosphere. For example, when an acidic chemical solution and an alkaline chemical solution are sequentially supplied to the wafer W, the splash guard 93 to which the acidic chemical solution is attached is exposed to an atmosphere containing the alkaline chemical solution, and the inner surface of the splash guard 93 is exposed. There is a risk that a salt is generated due to a chemical reaction between an acidic chemical component and an alkaline chemical component.

  Moreover, when the apparatus disclosed in Patent Document 1 is used, one type of chemical solution can be recovered, but the other type of chemical solution cannot be recovered. By connecting a three-way valve to the drain line 94 and connecting a new recovery line to the three-way valve, one type of chemical solution is collected in the recovery groove 924 and recovered from the recovery line 95, and the other type A configuration is conceivable in which the chemical solution is collected in the drainage groove 922 and recovered from a new recovery line. In such a configuration, pure water at the time of rinsing is mixed into the other type of chemical solution recovered from the new recovery line. Therefore, it is not possible to collect only the other type of chemical solution.

  Accordingly, an object of the present invention is to provide a substrate processing apparatus that can be suitably used for processing performed by sequentially supplying chemicals having different properties to a substrate. A substrate processing apparatus capable of preventing the generation of salt due to a chemical reaction between an acidic chemical solution component and an alkaline chemical solution component when applied to a process performed by sequentially supplying a chemical solution and an alkaline chemical solution It is to be.

  Another object of the present invention is to provide a substrate processing apparatus capable of separating and collecting a plurality of types of chemical solutions used for processing a substrate.

  The invention described in claim 1 for achieving the above object includes a substrate holding means (1) for holding and rotating a substrate (W) to be processed, and a processing cup (5; 50) containing the substrate holding means. And first and second splash guards (7, 8; 7, 80) provided in a concentric double ring shape around the rotation axis of the substrate above the processing cup, and the substrate holding means, Lifting means for moving the substrate holding means and the first and second splash guards relatively up and down by raising and lowering at least two of the first splash guard and the second splash guard relative to the processing cup. (85, 805).

  According to a second aspect of the present invention, there is provided a first chemical liquid supply means (3) for supplying a first chemical liquid to the substrate held by the substrate holding means, and a first hold on the substrate held by the substrate holding means. 2. The substrate processing apparatus according to claim 1, further comprising a second chemical solution supply means (2; 21, 22) for supplying a second chemical solution having a property different from that of the chemical solution.

  Furthermore, the invention described in claim 3 controls the elevating means so that the first chemical solution is being processed on the rotating substrate held by the substrate holding means. When one splash guard (7) is arranged at a position surrounding the periphery of the substrate, and the substrate held by the substrate holding means is being processed with the second chemical solution, 3. The substrate processing apparatus according to claim 2, further comprising an elevating control means (C) for disposing the second splash guard (8; 80) at a position surrounding the periphery of the substrate.

  In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.

  According to the configuration of the first aspect, the first and second splash guards are provided in a double ring shape above the processing cup containing the substrate holding means, and the substrate holding means and the first and second splashes are provided. The guard can be moved up and down relatively.

  Accordingly, the substrate processing apparatus has a first chemical solution supply unit that supplies the first chemical solution to the substrate held by the substrate holding unit, and a first chemical solution that is different in nature from the first chemical solution supplied to the substrate held by the substrate holding unit. And a second chemical solution supply means for supplying the second chemical solution (Claim 2), and the first chemical solution and the second chemical solution are sequentially performed. When the treatment with the first chemical solution is being performed, the first splash guard is disposed at a position surrounding the periphery of the substrate. When the treatment with the second chemical solution is being performed on the substrate, the second splash guard is disposed. By disposing the guard at a position surrounding the periphery of the substrate (Claim 3), it is possible to prevent the first splash guard to which the first chemical solution is attached from being exposed to an atmosphere containing the second chemical solution, With 2 chemicals Second splash guard that can be prevented from being exposed to an atmosphere containing a first chemical liquid.

  Therefore, even if the first chemical liquid is an acidic chemical liquid and the second chemical liquid is an alkaline chemical liquid, the chemistry of the acidic chemical liquid component and the alkaline chemical liquid component on the inner surfaces of the first and second splash guards, etc. It is possible to prevent formation of a salt due to the reaction.

  According to a fourth aspect of the present invention, the substrate processing apparatus further includes a rinsing liquid supply means (4) for supplying a rinsing liquid to the substrate held by the substrate holding means, and the first splash guard includes the substrate. A chemical liquid capture unit (72) for capturing the first chemical liquid scattered from the rotating substrate held by the holding means, and a first liquid scattered from the rotating substrate held by the substrate holding means. The substrate processing apparatus according to claim 3, further comprising a drainage capture unit (71) for capturing a rinse solution containing a chemical solution.

  According to this configuration, the first chemical liquid can be captured and recovered by the chemical liquid capture section, and the rinse liquid containing the first chemical liquid can be captured and drained by the drainage capture section.

  According to a fifth aspect of the present invention, the substrate processing apparatus further includes a rinsing liquid supply means (4) for supplying a rinsing liquid to the substrate held by the substrate holding means, and the second splash guard includes the substrate. A chemical liquid capture unit (82) for capturing the second chemical liquid scattered from the rotating substrate held by the holding means, and a second liquid scattering from the rotating substrate held by the substrate holding means. The substrate processing apparatus according to claim 3 or 4, further comprising a drainage capture unit (81) for capturing a rinse solution containing a chemical solution.

  According to this configuration, the second chemical solution can be captured and collected by the chemical solution capture unit, and the rinse liquid containing the second chemical solution can be captured and drained by the drainage capture unit.

  When the invention according to claim 4 and the invention according to claim 5 are combined, the first chemical solution and the second chemical solution can be well separated and collected, and the first chemical solution can be collected. The rinse liquid containing and the rinse liquid containing a 2nd chemical | medical solution can be fractionated favorably, and they can be drained through a separate drainage line.

  The first and second chemicals may be the same type of chemicals having different concentrations as described in claim 6, or the same type of chemicals having different temperatures as described in claim 7. It may be. In addition, as described in claim 8, the first chemical solution may be an acidic chemical solution and the second chemical solution may be an alkaline chemical solution.

  The invention according to claim 9 is characterized in that at least one of the first and second splash guards has a plurality of capturing portions (71, 71) for capturing splashes from the rotating substrate held by the substrate holding means. 72, 81, 82; 801, 803, 804). The substrate processing apparatus according to claim 1, wherein

  If one of the first and second splash guards has a plurality of capture parts, for example, the first or second chemical liquid and the rinse liquid containing the first or second chemical liquid can be separated. . Furthermore, if both the first and second splash guards have a plurality of capture units, the first chemical solution and the second chemical solution can be well separated and recovered, and the first It is also possible to separate well the rinse liquid containing the chemical liquid and the rinse liquid containing the second chemical liquid, and drain them through separate drain lines.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a sectional view conceptually showing the structure of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus sequentially supplies an acidic chemical solution (hereinafter referred to as “acid chemical solution”) and an alkaline chemical solution (hereinafter referred to as “alkali chemical solution”) to a wafer W, which is an example of a substrate, to the wafer W. An apparatus for performing processing on the spin chuck 1 that holds the wafer W substantially horizontally and rotates around the vertical axis, and supplies an acid chemical solution to the upper surface of the wafer W held by the spin chuck 1. An acid chemical nozzle 2 for supplying the alkaline chemical liquid to the upper surface of the wafer W held on the spin chuck 1, and a rinsing liquid to the upper surface of the wafer W held on the spin chuck 1. A rinsing liquid nozzle 4 is provided. As the rinse liquid, for example, DIW (deionized pure water) can be used.

  The spin chuck 1 is accommodated in a bottomed cylindrical processing cup 5. On the bottom surface of the processing cup 5, four cylindrical partition walls 51, 52, 53, 54 stand in a concentric ring shape around the rotation axis of the spin chuck 1 (wafer W) so as to surround the spin chuck 1. It is installed. Thus, in the processing cup 5, the first drainage groove 55, the cylindrical partition wall 51 and the cylindrical shape facing the cylindrical partition wall 51 between the spin chuck 1 and the innermost cylindrical partition wall 51. A first recovery groove 56 between the partition wall 52 and the second drainage groove 57 between the cylindrical partition wall 52 and the cylindrical partition wall 53 opposed to the cylindrical partition wall 52, and the cylindrical partition wall 53 A second recovery groove 58 is formed between the cylindrical partition wall 54 and the cylindrical partition wall 54 facing the cylindrical partition wall 53, and a third drainage groove 59 is formed between the cylindrical partition wall 54 and the outer wall (not shown) of the processing cup 5. Are formed respectively.

  Drain lines 61, 62, and 63 are connected to the first drain groove 55, the second drain groove 57, and the third drain groove 59, respectively. The first recovery groove 56 is connected to an alkaline chemical recovery line 64 extending to an alkaline chemical recovery processing facility (not shown), and the second recovery groove 58 is connected to an acidic chemical recovery processing facility (see FIG. An acid chemical solution recovery line 65 extending to (not shown) is connected.

  Above the processing cup 5, splash guards 7 and 8 each having a substantially rotationally symmetric shape with respect to the rotation axis of the wafer W are provided in a double ring shape.

  The inner splash guard 7 is disposed above the first drainage groove 55 and the first recovery groove 56. On the inner surface of the splash guard 7, there is formed a rinse liquid trapping portion 71 having a square cross section that is open at the top so as to face the rotation axis of the wafer W, and the lower portion is inclined downward as the distance from the rotation axis of the wafer W increases. A chemical liquid capturing part 72 having a curved surface is formed. The lower end of the chemical liquid capture unit 72 enters the first recovery groove 56 and is fixed to the inner surface of the cylindrical partition wall 52 at an appropriate position. Thereby, the splash guard 7 is fixedly provided to the processing cup 5. Further, the lower end edge of the rinsing liquid capturing unit 71 and the upper end edge of the chemical liquid capturing unit 72 are connected by a cylindrical surface 73. The cylindrical surface 73 is located above the first recovery groove 56, and a predetermined amount in the vertical direction is formed between the lower end edge (the upper end edge of the chemical liquid capture unit 72) and the cylindrical partition wall 51 of the processing cup 5. Is spaced.

  The outer splash guard 8 is disposed above the second drainage groove 57 and the second recovery groove 58. On the inner surface of the splash guard 8, there is formed a rinse liquid trapping portion 81 having a square cross section that is open at the top so as to face the rotation axis of the wafer W, and the lower portion is inclined downward as the distance from the rotation axis of the wafer W increases. A chemical liquid capture portion 82 having a curved surface is formed. The lower end of the chemical liquid capture unit 82 is located above the second recovery groove 58. Further, the lower end edge of the rinse liquid capturing unit 81 and the upper end edge of the chemical liquid capturing unit 82 are connected by a cylindrical surface 83. The cylindrical surface 83 is located above the second recovery groove 58, and a partition wall storage groove 84 for receiving the cylindrical partition wall 53 of the processing cup 5 is formed near the upper end of the chemical liquid capture unit 82. Yes.

  A guard elevating mechanism 85 for raising and lowering the splash guard 8 is coupled to the outer splash guard 8. For example, as shown in FIG. 2, the guard lifting mechanism 85 includes a ball screw mechanism. That is, the guard elevating mechanism 85 penetrates the bottom surface of the processing cup 5 and has a support member 851 whose upper end is fixed to the upper end portion of the splash guard 8 and a ball nut 852 attached to the lower end of the support member 851. A screw shaft 853 into which the ball nut 852 is screwed and a motor 854 for applying a rotational force to the screw shaft 853 are provided. When a rotational force is applied from the motor 854 to the screw shaft 853 to rotate the screw shaft 853 in the forward and reverse directions, the ball nut 852 moves up and down along the screw shaft 853, and accordingly, the splash guard together with the support member 851. 8 goes up and down.

  In this embodiment, the chuck lifting mechanism 11 is coupled to the spin chuck 1, and the spin chuck 1 is lifted and lowered by the chuck lifting mechanism 11 and the splash guard 8 is lifted and lowered by the guard lifting mechanism 85. The rinse liquid capture unit 71 and the chemical liquid capture unit 72 of the splash guard 7 and the rinse liquid capture unit 81 and the chemical liquid capture unit 82 of the splash guard 8 can be selectively opposed to the end surface of the wafer W held by 1. . Further, the splash guards 7 and 8 are positioned below the wafer W held by the spin chuck 1 so that the splash guards 7 and 8 do not exist on the side of the wafer W. Note that the upper surfaces of the splash guards 7 and 8 may be horizontal, or may be inclined surfaces that descend downward so as to prevent droplets from accumulating on the upper surfaces.

  The operations of the chuck lifting mechanism 11 and the guard lifting mechanism 85 are controlled by a control device C having a configuration including a microcomputer. Further, a chuck rotating mechanism 12 for applying a rotational force to the spin chuck 1 is coupled to the spin chuck 1, and the operation of the chuck rotating mechanism 12 is also controlled by the control device C.

  FIG. 3.1 and FIG. 3.2 are cross-sectional views schematically showing the behavior of the spin chuck 1 and the splash guard 8 during the processing of the wafer W. FIG. Before the wafer W to be processed is loaded, the spin chuck 1 is raised to the uppermost position and the splash guard 8 is lowered to the lowermost position. Splash guards 7 and 8 do not exist.

  When the wafer W to be processed is loaded and the wafer W is held by the spin chuck 1, as shown in FIG. 3.1 (a), the end surface of the wafer W has the chemical liquid capture unit 72 ( The spin chuck 1 is lowered to a position facing the gap between the lower end edge of the cylindrical surface 73 and the cylindrical partition wall 51 of the processing cup 5. In this state, the wafer W (spin chuck 1) is rotated, and the alkaline chemical liquid is supplied from the alkaline chemical liquid nozzle 3 to the center of the upper surface of the rotating wafer W. The alkaline chemical supplied to the upper surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, spreads on the upper surface of the wafer W, and scatters from the periphery of the wafer W to the side. Thereby, the alkaline chemical liquid spreads over the upper surface of the wafer W, and the treatment with the alkaline chemical liquid on the upper surface of the wafer W is achieved.

  At this time, the alkaline chemical liquid shaken off from the periphery of the wafer W and scattered to the side is captured by the chemical liquid capture unit 72 of the splash guard 7. And the alkaline chemical | medical solution captured by the chemical | medical solution capture | acquisition part 72 flows along the chemical | medical solution capture | acquisition part 72, flows down from the lower end edge of the chemical | medical solution capture | acquisition part 72 to the 1st collection groove | channel 56 of the processing cup 5, and is collected. It is collected in an alkaline chemical recovery processing facility through an alkaline chemical recovery line 64 connected to the recovery groove 56.

  When the supply of the alkaline chemical solution to the wafer W is performed for a predetermined time, the supply of the alkaline chemical solution from the alkaline chemical solution nozzle 3 is stopped. Thereafter, the spin chuck 1 is slightly lifted, and the end surface of the wafer W held by the spin chuck 1 is opposed to the rinse liquid capturing portion 71 of the splash guard 7 as shown in FIG. 3.1 (b). In this state, the rinsing liquid is supplied from the rinsing liquid nozzle 4 to the central portion of the upper surface of the wafer W that is rotating continuously from the time of processing with the alkaline chemical liquid. The rinse liquid supplied to the upper surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, spreads on the upper surface of the wafer W, and scatters from the periphery of the wafer W to the side. Thereby, the alkaline chemical liquid adhering to the upper surface of the wafer W is washed away with the rinse liquid.

  The rinsing liquid containing the alkaline chemical liquid that has been shaken off from the periphery of the wafer W and scattered laterally is captured by the rinsing liquid capturing portion 71 of the splash guard 7 facing the end face of the wafer W at this time. Then, the rinsing liquid captured by the rinsing liquid capturing unit 71 flows from the rinsing liquid capturing unit 71 along the cylindrical surface 73 and flows down from the lower end edge of the cylindrical surface 73 to the first drain groove 55 of the processing cup 5. The liquid is discharged (discarded) through the drainage line 61 connected to the first drainage groove 55.

  As described above, the periphery of the wafer W held by the spin chuck 1 is surrounded by the splash guard 7 during the period in which the processing with the alkaline chemical liquid and the subsequent rinsing processing are performed on the wafer W. In other words, the splash guard 7 is placed around the wafer W held by the spin chuck 1 during a period in which an atmosphere of the alkaline chemical solution can be generated.

  When the rinse liquid is supplied to the wafer W over a predetermined time, the supply of the rinse liquid from the rinse liquid nozzle 4 is stopped. Thereafter, the spin chuck 1 is raised to the uppermost position, and the splash guard 8 is raised to the uppermost position. As shown in FIG. 3.1 (c), the wafer W held on the spin chuck 1 is moved. The end face faces the chemical liquid capture part 82 of the splash guard 8. Then, in this state, the acid chemical solution is supplied from the acid chemical solution nozzle 2 to the central portion of the upper surface of the wafer W that has been rotating since the rinse process. The acid chemical liquid supplied to the upper surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, spreads on the upper surface of the wafer W, and scatters from the periphery of the wafer W to the side. As a result, the acid chemical solution spreads over the upper surface of the wafer W, and the treatment with the acid chemical solution on the upper surface of the wafer W is achieved.

  The acid chemical liquid that is shaken off from the periphery of the wafer W and scattered to the side is captured by the chemical liquid capture unit 82 of the splash guard 8. The acid chemical liquid captured by the chemical liquid capture unit 82 flows through the chemical liquid capture unit 82 and is collected by flowing down from the lower end edge of the chemical liquid capture unit 82 to the second recovery groove 58 of the processing cup 5. And it is collect | recovered by the acid chemical solution collection | recovery process equipment through the acid chemical solution collection line 65 connected to the 2nd collection groove | channel 58. FIG.

  When the supply of the acid chemical solution to the wafer W is performed for a predetermined time, the supply of the acid chemical solution from the acid chemical solution nozzle 2 is stopped. Thereafter, the splash guard 8 is slightly lowered, and the rinse liquid trapping portion 81 of the splash guard 8 faces the end face of the wafer W held on the spin chuck 1 as shown in FIG. 3.2 (d). In this state, the rinsing liquid is supplied from the rinsing liquid nozzle 4 to the central portion of the upper surface of the wafer W that is rotating continuously from the time of the treatment with the acid chemical liquid. The rinse liquid supplied to the upper surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, spreads on the upper surface of the wafer W, and scatters from the periphery of the wafer W to the side. Thereby, the acid chemical liquid adhering to the upper surface of the wafer W is washed away with the rinse liquid.

  The rinse liquid containing the acid chemical liquid that has been shaken off from the periphery of the wafer W and scattered laterally is captured by the rinse liquid trapping portion 81 of the splash guard 8 facing the end surface of the wafer W at this time. Then, the rinsing liquid captured by the rinsing liquid capturing unit 81 travels from the rinsing liquid capturing unit 81 along the cylindrical surface 83 and flows down from the lower end edge of the cylindrical surface 83 to the second drain groove 57 of the processing cup 5. It is discharged (discarded) through the drainage line 62 connected to the second drainage groove 57.

  As described above, the periphery of the wafer W held by the spin chuck 1 is surrounded by the splash guard 8 during the period in which the processing with the acid chemical solution and the subsequent rinsing processing are performed on the wafer W. In other words, the splash guard 8 is placed around the wafer W held by the spin chuck 1 during a period in which the atmosphere of the acid chemical solution can be generated.

  When the rinse liquid is supplied to the wafer W over a predetermined time, the supply of the rinse liquid from the rinse liquid nozzle 4 is stopped. Then, the spin chuck 1 is raised to the uppermost position, and the splash guard 8 is lowered to the lowermost position. As shown in FIG. 3.2 (e), the side of the wafer W held by the spin chuck 1 is reached. On the other hand, the splash guards 7 and 8 are not present. Thereafter, the rotation speed of the wafer W (spin chuck 1) is increased to a predetermined high rotation speed, and the rinse liquid adhering to the surface of the wafer W after the rinsing process is spun off by a centrifugal force and dried. For a predetermined drying time. When the spin dry process is completed, the rotation of the wafer W by the spin chuck 1 is stopped, and the processed wafer W is unloaded from the spin chuck 1.

  The rinse liquid shaken off from the wafer W during the spin dry process greatly flies to the side of the wafer W and is captured by the outer wall of the processing cup 5, and the rinse liquid between the outer wall of the processing cup 5 and the cylindrical partition wall 54 is captured. Collected in the third drainage groove 59 and discharged (discarded) through the drainage line 63 connected to the third drainage groove 59.

  As described above, according to this embodiment, the splash guards 7 and 8 are provided in a double ring shape above the processing cup 5 in which the spin chuck 1 is accommodated, and the spin chuck 1 and the outer splash guard 8 are moved up and down. It is configured to be possible. The wafer W is surrounded by the inner splash guard 7 during the period in which the wafer W is processed with the alkaline chemical and the subsequent rinsing process by the combination of raising and lowering the spin chuck 1 and the splash guard 8. During the period in which the treatment with the acid chemical solution for W and the subsequent rinse treatment are performed, the periphery of the wafer W is surrounded by the outer splash guard 8. Thereby, it is possible to prevent the splash guard 7 attached with the alkaline chemical solution from being exposed to the atmosphere containing the acidic chemical solution, and to prevent the splash guard 8 attached to the acidic chemical solution from being exposed to the atmosphere containing the alkaline chemical solution. be able to. Therefore, it is possible to prevent salt from being generated due to a chemical reaction between the acid chemical component and the alkaline chemical component on the inner surfaces of the splash guards 7 and 8.

  In addition, in this embodiment, during the period when the wafer W is processed with the alkaline chemical and the subsequent rinsing process, the splash guard 8 is lowered to the lowermost position, so that the splash guard 8 causes the second recovery groove 58 to be lowered. Is closed. Therefore, it is also possible to prevent salt from being generated in the second recovery groove 58 due to a chemical reaction between the acid chemical liquid component and the alkaline chemical liquid component.

  Furthermore, the inner surface of the splash guard 7 scatters from the wafer W during the rinsing process after the treatment with the alkaline chemical solution, and the chemical solution capturing unit 72 that captures the alkaline chemical solution that scatters from the wafer W when the wafer W is treated with the alkaline chemical solution. A rinsing liquid capturing unit 71 that captures a rinsing liquid containing an alkaline chemical liquid is formed, and a chemical liquid that captures the acidic chemical liquid scattered from the wafer W when the wafer W is processed with the acidic chemical liquid is formed on the inner surface of the splash guard 8. A capturing unit 82 and a rinsing liquid capturing unit 81 that captures a rinsing liquid containing an acid chemical liquid that scatters from the wafer W during the rinsing process after the treatment with the acid chemical liquid are formed. As a result, the alkaline chemical solution and the acid chemical solution can be well separated and collected, and the recovered alkaline chemical solution and acid chemical solution can be reused to treat the wafer W with a good alkaline chemical solution and treatment with the acid chemical solution. Can be applied. Moreover, the rinse liquid containing an alkaline chemical | medical solution and the rinse liquid containing an acidic chemical | medical solution can be fractionated favorably, and they can be drained through the separate drainage lines 61 and 62. FIG. Therefore, there is no possibility of producing a salt due to a chemical reaction between the alkaline chemical component and the acid chemical component on the drain lines 61 and 62.

  In this embodiment, the configuration in which the spin chuck 1 and the outer splash guard 8 can be moved up and down is taken up. However, the spin chuck 1 is fixedly arranged with respect to the processing cup 5 and the splash guards 7 and 8 are connected to the processing cup. 5 is configured so that the splash guards 7 and 8 can be raised and lowered, and the rinse liquid catching portion 71 and the chemical solution catching portion 72 of the splash guard 7 and the end surface of the wafer W held by the spin chuck 1 are combined with each other. The rinse liquid capture unit 81 and the chemical liquid capture unit 82 of the splash guard 8 can be selectively opposed to each other, and the splash guards 7 and 8 can be positioned below the wafer W held by the spin chuck 1. May be. In addition, the spin chuck 1 and the splash guards 7 and 8 can be moved up and down with respect to the processing cup 5, and the wafer W held on the spin chuck 1 by the combination of raising and lowering the spin chuck 1 and the splash guards 7 and 8. The wafer W held by the spin chuck 1 is selectively opposed to the rinse liquid capture unit 71 and chemical solution capture unit 72 of the splash guard 7 and the rinse solution capture unit 81 and chemical solution capture unit 82 of the splash guard 8. Alternatively, the splash guards 7 and 8 may be positioned below.

  As a mechanism for raising and lowering the splash guards 7 and 8 independently, the configuration shown in FIG. 4 can be adopted. That is, the guard lifting mechanism 75 for raising and lowering the inner splash guard 7 penetrates the bottom surface of the processing cup 5 and has a support member 751 whose upper end is fixed to the lower end portion of the splash guard 7 and the support member 751. A ball nut 752 attached to the lower end, a screw shaft 753 into which the ball nut 752 is screwed, and a motor 754 for applying a rotational force to the screw shaft 753 are provided. When a rotational force is applied from the motor 754 to the screw shaft 753 to rotate the screw shaft 753 in the forward and reverse directions, the ball nut 752 moves up and down along the screw shaft 753, and accordingly, the splash guard together with the support member 751. 7 goes up and down.

  Since the mechanism for raising and lowering the outer splash guard 8 is the same as that shown in FIG. 2, the description of the configuration is omitted, and FIG. 4 corresponds to each part shown in FIG. The same reference numerals as those in the case of FIG.

  FIG. 5 is a sectional view conceptually showing the structure of a substrate processing apparatus according to another embodiment of the present invention. In FIG. 5, parts corresponding to the parts shown in FIG. 1 are denoted by the same reference numerals as in FIG.

  The substrate processing apparatus includes a spin chuck 1 that holds a wafer W substantially horizontally and rotates around a vertical axis, and a first acid chemical solution for supplying a first acid chemical solution to the upper surface of the wafer W held by the spin chuck 1. 1 acid chemical solution nozzle 21, a second acid chemical solution nozzle 22 for supplying a second acid chemical solution to the upper surface of the wafer W held on the spin chuck 1, and an alkali on the upper surface of the wafer W held on the spin chuck 1. An alkaline chemical nozzle 3 for supplying chemical liquid and a rinsing liquid nozzle 4 for supplying rinsing liquid to the upper surface of the wafer W held by the spin chuck 1 are provided.

  The method of processing the wafer W with the first acid chemical solution and the method of processing the wafer W with the second acid chemical solution are the same as the method of processing the wafer W with the acid chemical solution in the substrate processing apparatus having the configuration shown in FIG. That is, while the wafer W is rotated by the spin chuck 1, the first acid chemical liquid nozzle or the second acid chemical liquid nozzle from the first acid chemical liquid nozzle 21 is formed at the center of the upper surface of the rotating wafer W. A second acid chemical solution is supplied. The rinsing method performed after the processing of the wafer W with the first acid chemical solution and after the processing of the wafer W with the second acid chemical solution is the same as the rinsing method in the substrate processing apparatus having the configuration shown in FIG. It is. That is, while the wafer W is rotated by the spin chuck 1, the rinse liquid from the rinse liquid nozzle 4 is supplied to the central portion of the upper surface of the rotating wafer W.

  The spin chuck 1 is accommodated in a bottomed cylindrical processing cup 50. On the bottom surface of the processing cup 50, five cylindrical partition walls 501, 502, 503, 504, and 505 surround the spin chuck 1 in a concentric ring shape around the rotation axis of the spin chuck 1 (wafer W). It is erected in. Thus, in the processing cup 50, the first drainage groove 506 between the spin chuck 1 and the innermost cylindrical partition wall 501, the cylindrical partition wall 501 and a cylindrical shape facing the cylindrical partition wall 501. The first recovery groove 507 is formed between the partition wall 502 and the second drainage groove 508 and the cylindrical partition wall 503 between the cylindrical partition wall 502 and the cylindrical partition wall 503 facing the cylindrical partition wall 502. A second recovery groove 509 is provided between the cylindrical partition wall 504 and the cylindrical partition wall 504 facing the cylindrical partition wall 503, and a third partition wall 504 is disposed between the cylindrical partition wall 504 and the cylindrical partition wall 505 facing the cylindrical partition wall 504. Third drainage grooves 511 are formed between the recovery groove 510, the cylindrical partition wall 505, and the outer wall (not shown) of the processing cup 50, respectively.

  Drain lines 601, 602 and 603 are connected to the first drain groove 506, the second drain groove 508 and the third drain groove 511, respectively. The first recovery groove 507 is connected to an alkaline chemical recovery line 604 extending to an alkaline chemical recovery processing facility (not shown). Further, an acid chemical solution recovery line 605 extending to a first acid chemical solution recovery processing facility (not shown) is connected to the second recovery groove 509, and a second acid chemical solution recovery processing facility is connected to the third recovery groove 510. An acid chemical solution recovery line 606 extending to (not shown) is connected.

  Above the processing cup 5, splash guards 7 and 80 each having a substantially rotationally symmetric shape with respect to the rotation axis of the wafer W are provided in a double ring shape.

  The outer splash guard 80 is disposed above the second drain groove 508, the second recovery groove 509, and the third recovery groove 510. On the inner surface of the splash guard 80, a rinse liquid trapping portion 801 having a square cross section that is open at the top so as to face the rotation axis of the wafer W is formed. Further, in the splash guard 80, the second cylindrical surface 803 extends below the first cylindrical surface 802 at a position farther from the rotation axis of the wafer W than the first cylindrical surface 802 continuous with the rinse liquid capturing unit 801. Further, the third cylindrical surface 804 extends downward from the second cylindrical surface 803 at a position farther from the rotation axis of the wafer W than the second cylindrical surface 803. The first cylindrical surface 802, the second cylindrical surface 803, and the third cylindrical surface 804 are located above the second drainage groove 508, the second recovery groove 509, and the third recovery groove 510, respectively.

  The splash guard 80 is coupled to a guard lifting mechanism 805 for raising and lowering the splash guard 80. The guard lifting mechanism 805 has the same configuration as the guard lifting mechanism 85 shown in FIG. 2, for example.

  With the above-described configuration, the splash guard 7 is placed on the end surface of the wafer W held by the spin chuck 1 by combining the lifting and lowering of the spin chuck 1 by the chuck lifting mechanism 11 and the lifting and lowering of the splash guard 80 by the guard lifting mechanism 805. The rinse liquid capture unit 71 and the chemical liquid capture unit 72, and the rinse liquid capture unit 801, the second cylindrical surface 803, and the third cylindrical surface 804 of the splash guard 80 can be selectively opposed to each other. Further, the splash guards 7 and 8 are positioned below the wafer W held by the spin chuck 1 so that the splash guards 7 and 8 do not exist on the side of the wafer W.

  Accordingly, when the wafer W is processed with the alkaline chemical solution, the chemical solution scattered from the peripheral edge of the wafer W is made to flow by making the chemical solution capturing portion 72 of the splash guard 7 face the end surface of the wafer W held by the spin chuck 1. It can be captured by the capture unit 72 and recovered from the first recovery groove 507 through the alkaline chemical recovery line 604. Further, at the time of the rinsing process after the treatment with the alkaline chemical liquid, the rinsing liquid containing the alkaline chemical liquid scattered from the peripheral edge of the wafer W can be captured by the rinsing liquid capture unit 71 of the splash guard 7 facing the end surface of the wafer W. It can be captured by the unit 71 and drained from the first drainage groove 506 through the drainage line 601.

  Further, when the wafer W is processed with the first acid chemical solution, the first cylindrical surface 803 of the splash guard 80 is opposed to the end surface of the wafer W held by the spin chuck 1 so as to be scattered from the periphery of the wafer W. The acid chemical solution can be captured by the second cylindrical surface 803 and recovered from the second recovery groove 509 through the acid chemical solution recovery line 605 to the first acid chemical solution recovery processing facility. In addition, when the wafer W is processed with the second acid chemical solution, the second cylindrical surface 804 of the splash guard 80 is opposed to the end surface of the wafer W held by the spin chuck 1, thereby scattering from the periphery of the wafer W. The acidic chemical solution can be captured by the third cylindrical surface 804 and recovered from the third recovery groove 510 through the acidic chemical solution recovery line 606 to the second acidic chemical solution recovery processing facility. Furthermore, in the rinsing process performed after the processing of the wafer W with the first acid chemical solution and after the processing of the wafer W with the second acid chemical solution, the rinse liquid capturing unit 801 of the splash guard 80 faces the end surface of the wafer W. As a result, the rinse liquid containing the acid chemical liquid scattered from the peripheral edge of the wafer W can be captured by the rinse liquid capturing unit 801 and drained from the second drain groove 508 through the drain line 602.

  Further, during the period during which the wafer W is treated with the alkaline chemical solution and the subsequent rinsing process, the periphery of the wafer W held by the spin chuck 1 is surrounded by the inner splash guard 7, and the first acid is applied to the wafer W. During the period in which the rinse treatment performed after the treatment with the chemical solution, the treatment with the second acid chemical solution, and the treatment of the wafer W with the first acid chemical solution and after the treatment of the wafer W with the second acid chemical solution, is performed. The periphery of W can be surrounded by the outer splash guard 8. Therefore, similarly to the configuration shown in FIG. 1, it is possible to prevent salt from being generated due to a chemical reaction between the acid chemical component and the alkaline chemical component on the inner surfaces of the splash guards 7 and 80.

  In this embodiment, the configuration in which the spin chuck 1 and the outer splash guard 80 can be moved up and down is taken up. However, the spin chuck 1 is fixedly arranged with respect to the processing cup 50 and the splash guards 7 and 80 are processed. The spin chuck 1 and the splash guards 7 and 80 may be configured to be movable up and down relative to the processing cup 5.

  As mentioned above, although several embodiment of this invention was described, this invention may be implemented with another form. For example, the configuration shown in FIG. 5 has been described as an example of a configuration capable of separating and collecting three types of chemical solutions. However, in addition to the configuration shown in FIG. By newly providing a new cylindrical partition wall so as to surround the cylindrical partition wall 54, a drainage groove and a recovery groove are newly formed outside the cylindrical partition wall 54, and the drainage groove and the recovery groove The splash guard 7 having the same structure as the splash guard 7 also separates and collects three types of chemical solutions, and also separates and drains the rinse solutions used in the rinse treatment performed after the treatment with each chemical solution. can do.

  More drainage grooves and recovery grooves are formed, and correspondingly, a splash guard having the same configuration as the splash guard 7 or the splash guard 80 is additionally provided to separate and collect four or more kinds of chemical solutions. Moreover, the rinse solution used in the rinse treatment performed after the treatment with each chemical solution can be separated and drained.

  Furthermore, the substrate to be processed is not limited to the wafer W, but may be other types of substrates such as a glass substrate for a liquid crystal display device, a glass substrate for a plasma display panel, and a glass substrate for a photomask.

  In addition, various design changes can be made within the scope of matters described in the claims.

It is sectional drawing which shows notionally the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. It is sectional drawing which simplifies and shows the structure of a guard drive mechanism. FIG. 6 is a cross-sectional view (part 1) schematically illustrating the operation of the spin chuck and the splash guard during processing of a substrate (wafer). FIG. 10 is a cross-sectional view (part 2) schematically illustrating the behavior of the spin chuck and the splash guard during the processing of the substrate (wafer). It is sectional drawing which simplifies and shows the structure for raising / lowering two splash guards. It is sectional drawing which shows notionally the structure of the substrate processing apparatus which concerns on other embodiment of this invention. It is sectional drawing which shows notionally the structure of the conventional substrate processing apparatus which can recycle a chemical | medical solution.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Spin chuck 11 Chuck raising / lowering mechanism 2 Acid chemical liquid nozzle 3 Alkaline chemical liquid nozzle 4 Rinse liquid nozzle 5 Processing cup 7 Splash guard 71 Rinse liquid capture part 72 Chemical liquid capture part 75 Guard elevating mechanism 8 Splash guard 81 Rinse liquid capture part 82 Chemical liquid capture part 85 Guard Lifting Mechanism 21 First Acid Chemical Liquid Nozzle 22 Second Acid Chemical Liquid Nozzle 50 Processing Cup 80 Splash Guard 801 Rinse Liquid Capturing Section 803 Second Cylindrical Surface 804 Third Cylindrical Surface 805 Guard Lifting Mechanism C Controller W Wafer

Claims (9)

A substrate holding means for holding and rotating the substrate to be processed;
A processing cup containing the substrate holding means;
Above the processing cup, first and second splash guards provided in a concentric double ring shape around the rotation axis of the substrate;
By raising and lowering at least two of the substrate holding means, the first splash guard, and the second splash guard relative to the processing cup, the substrate holding means and the first and second splash guards are relatively moved. And a lifting / lowering means for lifting and lowering the substrate. First chemical liquid supply means for supplying a first chemical liquid to the substrate held by the substrate holding means;
2. The substrate processing apparatus according to claim 1, further comprising second chemical liquid supply means for supplying a second chemical liquid having a property different from that of the first chemical liquid to the substrate held by the substrate holding means.   The first splash guard is moved around the substrate when the first chemical solution is being processed on the rotating substrate held by the substrate holding unit by controlling the elevating unit. A position that surrounds the periphery of the substrate when the second splash guard is disposed at a surrounding position and the substrate held by the substrate holding means is rotating with the second chemical solution. The substrate processing apparatus according to claim 2, further comprising an elevating control unit disposed on the substrate. The substrate processing apparatus further includes a rinsing liquid supply means for supplying a rinsing liquid to the substrate held by the substrate holding means,
The first splash guard is held by the substrate holding unit and is rotated by being held by the substrate holding unit and a chemical solution capturing unit for capturing the first chemical solution scattered from the rotating substrate. The substrate processing apparatus according to claim 3, further comprising a drainage capturing unit configured to capture a rinsing liquid containing the first chemical liquid scattered from the substrate. The substrate processing apparatus further includes a rinsing liquid supply means for supplying a rinsing liquid to the substrate held by the substrate holding means,
The second splash guard is held by the substrate holding means and is rotated by being held by the substrate holding means and the chemical solution capturing section for capturing the second chemical liquid that is scattered from the rotating substrate. The substrate processing apparatus according to claim 3, further comprising a drainage capturing unit configured to capture a rinsing liquid containing a second chemical liquid scattered from the substrate.   6. The substrate processing apparatus according to claim 2, wherein the first and second chemical solutions are the same type of chemical solutions having different concentrations.   The substrate processing apparatus according to claim 2, wherein the first and second chemical liquids are the same chemical liquid having different temperatures. The first chemical is an acidic chemical,
The substrate processing apparatus according to claim 2, wherein the second chemical solution is an alkaline chemical solution.   At least one of the first and second splash guards has a plurality of capturing portions for capturing splashes from a rotating substrate held by the substrate holding means. Item 9. The substrate processing apparatus according to any one of Items 1 to 8.

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