JP2005064412A - Block hybrid light emitting device and illumination light source using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the light emitting efficiency of a block hybrid light emitting device (LED) that mounts to one submount element a block light emitting device having a plurality of light emitting devices, and to provide an illumination light source for ac driving that uses the same. <P>SOLUTION: This block hybrid light emitting device mounts and electrically connects a block white light emitting device 22 to a submount device 13 having an A1N ceramic substrate 9, wherein by the synergy of the Ag electrode film effect of a p-side electrode 6a, the grooving effect of a sapphire 4, the light absorption-less effect and heat dissipation effect of an A1N ceramic substrate 9, the heat dissipation effect of a bump electrode 8a under an anode electrode and the like its light emitting efficiency is improved by 20%×20%×20%+α, i.e., 80% or more. Further, a block hybrid LED can easily compose a light source for illumination that is driven by ac 100V. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a hybrid light-emitting device, and more particularly, to a hybrid light-emitting device in which the light-emitting device is hybridized by flip-chip bonding to a submount device, and the function can be improved by the submount device, and an illumination light source using the hybrid light-emitting device.

Conventional semiconductor light emitting devices that emit blue light using GaN-based compound semiconductors such as GaN, GaAlN, InGaN, and InAlGaN are significantly brightened and coated with a wavelength conversion layer containing not only blue light emission but also a fluorescent material. It came to be used as white light emission. Ga
In a light-emitting element using an N-based compound semiconductor, transparent and insulating sapphire is generally used as a crystal substrate, and thus p-side and n-side electrodes are formed on the surface opposite to the substrate. This is a flip-chip type. By utilizing this fact, a face-down method is adopted in which each electrode is mounted on a wiring board or lead frame mounting surface via a micro bump, and the upper surface of the transparent sapphire substrate is the main light extraction surface. Is effective. Also, with this structure, p
Since the side electrode also serves as a light reflecting mirror, it is important to use an electrode material with good reflectivity. For this purpose, at present, rhodium (Rh) is used as an electrode material capable of making a good ohmic contact with the p-type layer and having a high reflectance. The reflectance of rhodium is about 75% with respect to light having a wavelength of 450 nm. Such GaN-based compound semiconductors that emit blue light are sensitive to static electricity, so hybrid light-emitting elements combined with a zener diode for electrostatic protection have been widely used in recent years (for example, (See Patent Document 1).

Further, as the light emitting element, the above hybrid is used by using a block light emitting element in which a plurality of commonly used GaN-based compound semiconductor light emitting elements each having a side of 0.32 mm (referred to as a single light emitting element) are arranged in a matrix and blocked. A block hybrid light emitting device having a structure has also been proposed (see, for example, Patent Document 2).

Hereinafter, a conventional hybrid light emitting device and a block hybrid light emitting device will be described with reference to FIGS.

8A is a plan view of a conventional hybrid light emitting device, FIG. 8B is a front view, and FIG. 8C is an equivalent circuit diagram. As shown in the figure, the light emitting element 71 is formed by laminating a GaN compound semiconductor on a sapphire substrate 71a, and is connected to a p-type layer and an n-type layer to form a p-side electrode (also serving as a reflective electrode using rhodium) 71c. And the n side electrode 71b is formed. On the other hand, in the submount element 72 using a Zener diode, an impurity is implanted into a part of the upper surface side of the n-type Si substrate 72a to form a p-type semiconductor region 72b, and the p-type semiconductor region 72b is brought into contact with the p-type semiconductor region 72b. A side electrode 72c is provided, an n-side electrode 72d is formed on the upper surface side of the remaining n-type semiconductor region 72a, and a back electrode 72e is formed on the lower surface side. The n-side electrode 71b of the light-emitting element 71 is connected to the p-side electrode 72c of the submount element 72 by the bump 73a, and the p-side electrode 71c of the light-emitting element 71 is connected to the n-side electrode 72d of the submount element 72 by the bump 73b. Has been.

In this way, by causing the n side and the p side to conduct with opposite polarities, the submount element 72 using a Zener diode can prevent the light emitting element 71 from being damaged due to static electricity. Further, since the sapphire substrate 71a has a low thermal conductivity, heat dissipation is not sufficient.
However, since the light emitting element 71 is hybridized with the submount element 72, the luminance is reduced due to heat generation of the light emitting element 71. Can be prevented.

9A is a front view of a block hybrid light emitting device, FIG. 9B is a plan view, FIG. 9C is an equivalent circuit diagram, and FIG. 9D is a plan view of a Zener diode that is a submount device. As shown in the figure, the block light emitting element 82 is a light emitting element in which single light emitting elements 82a, 82b, 82c, 82d are arranged in two rows and two columns, and each single light emitting element is used in the conventional hybrid light emitting element 70 described above. The light emitting element 71 has the same structure. A block submount element 83 using a Zener diode corresponding to this has an insulating film 85 formed on the upper surface side of an n-type Si substrate 89a, and two openings 90a and 90b are formed in the insulating film 85. Impurities are implanted into the opening 90b to form a p-type semiconductor region 89b, and a p-side electrode 87b is provided in contact with the p-type semiconductor region 89b. The opening 90a is brought into contact with the n-type semiconductor region. The n-side electrode 87a is formed, and the four single light emitting elements 82a are formed on the other insulating film 85.
, 82b, 82c, and 82d, auxiliary circuits 87c for connecting the electrodes and the individual light emitting elements are formed at positions corresponding to the electrodes. Also, a back electrode 87d that is electrically connected to the n-side electrode 87a is formed on the lower surface side. Block light emitting element 82 on block submount element 83
Is mounted on the blip chip via the bumps 88a and 88b, the single light emitting element 82a.
, 82b, 82c, and 82d are connected in series to form a block hybrid light emitting element 81 in which a Zener diode is connected in reverse polarity.

By blocking, it is possible to distribute current more evenly and suppress local heat generation by dividing it into multiple single light emitting elements rather than flip-chip mounting one large light emitting element on a submount element. Therefore, it is possible to suppress a decrease in light emission efficiency due to heat generation, and it is suitable for applications where a large current flows, such as a light source for illumination. In addition, since a plurality of single light emitting elements can be mounted by one flip chip mounting, the cost can be reduced. There is also merit.
JP 2001-015817 A JP 2002-270905 A

Light emitting elements (LED elements) of each emission color are widely used in various fields, but in recent years, they have been studied as light sources for plant cultivation and illumination. In the case where the light source is used for plant cultivation or illumination, a large luminous intensity is required, and thus a large number of LED lamps are required. That is, in the LED elements that have been developed so far, the magnitude of the current that can be energized is as small as 20 mA at most, so a large number of LED elements are required to increase the luminous intensity, and the cost is extremely high. . When a large number of LED elements are used in this way, the block hybrid light emitting element 81 in which the block light emitting element 82 is flip-chip mounted on the block submount element 83 made of the Si substrate shown in FIG. This is a good structure as a light source for illumination because there is a merit in terms of reduction in cost and cost. However, this type of block hybrid light emitting element 81 is still insufficiently improved in the following four points.

First, the drive power source that is most easily replaced as the illumination light source is the same AC 10 as the current fluorescent lamp.
A form in which the 0V power supply can be used as it is is preferable. Therefore, the light emitting element used for the light source for illumination needs to have a function that takes that into consideration. From this point of view, the block hybrid light-emitting element 81 has a Zener diode 83 connected in reverse polarity, so that it cannot spend a half period of alternating current for light emission, resulting in energy loss with respect to alternating-current driving.

Second, the p-side electrode of the LED element also serves as a reflective electrode, but the electrode material used for it is rhodium with a reflectivity of about 75% for light with a wavelength of 450 nm. It is necessary to increase the light extraction efficiency from the LED element by replacing the material with a high material.

Third, the Si substrate (zener diode) used for the submount element is L
Although it has good functions and characteristics such as electrostatic protection and good heat dissipation of the ED element, it has extremely bad properties for use as a submount element of an LED element that absorbs only one visible light. Specifically, when the hybrid light-emitting device is used in a white LED, the light emission is 20%.
% Or more is absorbed, and the light extraction efficiency is deteriorated.

Fourthly, since the upper surface of sapphire, which is the main light extraction surface, is flat, the light extraction efficiency is deteriorated while light in the LED element cannot be sufficiently extracted. Luminous efficiency can be further improved by processing the outer shape of the upper surface of sapphire, which is the main light extraction surface.

If the above four problems can be improved, it will be easy to use as an illumination light source, and L
The light extraction efficiency from the ED element is improved by 40% or more, and the light extraction efficiency from the hybrid light emitting element is improved by 80% or more. As described above, in the conventional hybrid light emitting device having the structure shown in FIG. 8, the above-described improvement is further required for a light source that requires a large luminous intensity, such as for illumination. Therefore, the present invention makes the block hybrid light-emitting element used for the light source for illumination easy to use by alternating current drive, and the electrode material of the p-side electrode of the LED element is made of a material having higher reflectivity, and the light absorption is Si. It is an object of the present invention to provide a block light-emitting element and a block hybrid light-emitting element with improved luminous efficiency by being mounted on a submount element that is even smaller and has better heat dissipation, and an illumination light source using the block light-emitting element and block hybrid light-emitting element.

The block hybrid light emitting device (BHLED) of the present invention includes a block light emitting device (BLED) in which a plurality of single light emitting devices are formed in a matrix on a rectangular epitaxial wafer piece, and each electrode of the single light emitting device on an insulating substrate. And a block submount element (BSUB) having an auxiliary circuit for connecting the single light emitting element, and a bump electrode between the electrodes facing the BLED on the BSUB. In the BHLED that is flip-chip mounted, the single light emitting elements in each row are connected in series, and the rows are electrically independent.

Thereby, it is set as insulation BSUB, Since the single light emitting element in each line of BLED is connected in series, and each line is electrically independent, By connecting the same line of a plurality of BHLEDs in series, Since the drive voltage can be set to 100 V and adjacent rows of BLEDs can be connected so as to emit light with a half cycle of alternating current, it is easy to configure an illumination light source driven with an alternating current of 100 V voltage.

The AC BHLED of the present invention is an AC BLED in which the single light emitting elements in the adjacent rows of the BLED are arranged in reverse polarity, and an electrode in which the electrodes in the adjacent rows of the BSUB are reversely arranged corresponding to the AC BLED. In an AC BHLED comprising a BSUB and flip-chip mounted via a bump electrode between the electrodes facing the AC BLED on the AC BSUB,
The single light emitting elements in each row are connected in series, and each row is electrically independent.

Thereby, the BL for alternating current in which the single light emitting elements in the adjacent rows of the BLEDs are arranged in reverse polarity.
When an AC BHLED composed of an AC BSUB in which the ED and the electrode in the adjacent row of the BSUB are reversely arranged corresponding to the AC BLED is used, it becomes easier to configure an illumination light source driven by AC 100V.

Further, in the BHLED and the AC BHLED described above, the bump electrode in contact with the anode electrode of the single light emitting element is connected so as to cover almost the entire surface of the anode electrode so that heat can be efficiently radiated. It is characterized by.

As a result, heat generated in the light emitting layer of the single light emitting element efficiently flows to the BSUB via the bump electrode, thereby preventing a decrease in light emission efficiency due to heat generation.

In the BHLED and the AC BHLED described above, the material of the BSUB or the AC BSUB is an AlN ceramic substrate having a good thermal conductivity of a white insulator.

As a result, light absorption in BSUB can be extremely reduced, and since the AlN ceramic substrate has better heat dissipation than Si, it efficiently dissipates heat generated by current and keeps the light emission efficiency of the light emitting element good. Therefore, the luminous efficiency is improved by 20% or more.

Also, the BHLED and the AC BHLED described above, wherein the single light emitting element of the BLED or the AC BLED is a GaN-based blue (ultraviolet) LED having sapphire as a substrate.
It is preferable that the sapphire substrate side is a main light extraction surface, and the main light extraction surface is grooved to improve light extraction efficiency.

As a result, sapphire with a large refractive index is obtained by grooving the main light extraction surface (
Refractive index 1.7) to small epoxy resin (refractive index 1.5) and glass-based sealant (refractive index 1.
5) The total reflection that occurs when light is emitted can be reduced, and the light inside the LED can be efficiently emitted to the outside. Therefore, although it depends on the shape of the groove, the light extraction efficiency is improved by 20% or more.

In addition, the grooved BHLED and the AC BHLED described above, wherein a phosphor is applied on the side surface of the sapphire substrate and the main light extraction surface of the BLED or AC BLED, and a block white light emitting element (BWLED) ) Or AC BWLED.

Thus, by integrating the BLED and the phosphor, it is possible to obtain a block hybrid light emitting element that emits white light, and in comparison with a conventional light emitting device in which a phosphor is mixed with a sealing resin to form a white light emitting device. A free white light-emitting element can be achieved, and chromaticity adjustment for whitening can be easily performed.

Also, the BHLED or the AC BHLED described above is characterized in that Ag having a high reflectance is used for the anode electrode of the BLED or the AC BLED.

Thereby, the luminous efficiency from a single light emitting element improves by using Ag whose reflectance is 20% or more higher than rhodium for the p-side electrode of a GaN-based compound semiconductor light emitting element that is a single light emitting element. However, Ag is generally difficult to use as an electrode material for the p-side electrode in the following two points.

  One is that the p-type semiconductor layer of the light-emitting element does not have good ohmic characteristics.

Second, when Ag is used for the flip-chip type p-side electrode, the n electrode is close to it.
An Ag bridge is formed between the electrodes, and a short circuit occurs and the lamp does not light up.

  The present invention solves this problem as follows.

The good ohmic characteristics, which is the first problem, is that after forming an Au-based transparent electrode that makes a good ohmic connection to the p-type semiconductor layer normally used for the p-side electrode of the GaN-based compound semiconductor light-emitting device, When an Ag electrode film is formed by a method of chemically replacing Ag with Ag or a method of depositing Ag on Au, an electrode film having a reflectance of Ag is obtained while maintaining ohmic properties. A structure in which Ni and Au are laminated. Thereby, a p-side electrode having good ohmic characteristics and a reflectance of 95% or more can be formed.

For the second problem, the Ag film is formed as thin as possible within a range where the reflectance of Ag is maintained, and Ni and Au are laminated thereon to prevent Ag from being exposed to the surface. With
By adopting a driving method in which a direct current electric field, which is an important factor for migration, is not applied, Ag migration can be avoided. That is, it can be avoided by adopting a driving method using an AC power supply.

That is, in the case of the BHLED, the effect of the AlN ceramic substrate, the effect of the groove processing on the main light extraction surface, and the effect of the Ag electrode film increase the light emission efficiency as a synergistic effect with respect to the improvement of the light emission efficiency. × 20% = 80% or more improvement is possible. In terms of heat dissipation, it is possible to increase the current by increasing the bump electrode so that it is connected to almost the entire surface of the anode electrode, and using an AlN ceramic substrate with good thermal conductivity as the submount. At the same time, the AC drive is easy to configure.

The illumination light source of the present invention includes the BHLED and the BHLED 1 on the bottom surface of the mortar-shaped depression.
A heat dissipating block made of a highly heat conductive metal having a top surface with a plurality of mortar-shaped depressions and a convex wall portion in the periphery, and a printed wiring circuit formed on the top surface of the heat dissipating block And an electrode terminal for connecting to a wiring member and an external driving power source, and a sealing agent for sealing substantially the entire top surface of the BHLED and the heat dissipation block.

In this illumination light source, a block hybrid light-emitting element with improved light emission efficiency and good heat dissipation and suitable for an AC drive configuration is mounted on the bottom surface of a mortar-shaped depression formed in the heat dissipation block. In addition, since heat flows smoothly, an illumination light source that can easily drive a large current and drive an AC voltage of 100 V becomes possible.

Moreover, it is the light source for illumination mentioned above, Comprising: Said B located in the bottom face of these mortar-shaped hollows
The electrodes of the same row of HLEDs are connected in series.

Thus, by connecting the electrodes in the same row of a plurality of BHLEDs in series, the AC 1
An illumination light source driven by a voltage of 00 V can be produced.

Moreover, it is the light source for illumination mentioned above, Comprising: Said BHLED is said BLED or AC B
The anode electrode of the LED is a BHLED using Ag having a high reflectivity or a BHLED for alternating current, and is driven by alternating current.

As a result, Ag with high reflectivity is applied to the p-side electrode (anode electrode) of the single light emitting element of the BLED.
By using the electrode film, luminous efficiency can be increased and Ag migration can be prevented by AC driving.

Moreover, it is the illumination light source mentioned above, Comprising: It is preferable that Ag plating with high reflectance is made | formed on the bottom face and side wall of the said mortar-shaped hollow.

Thereby, since the bottom face and side wall of the mortar-shaped depression where the BHLED is located are plated with Ag having high reflectivity, the light emitted from the BHLED can be efficiently reflected on the front face of the illumination light source.

In the illumination light source described above, the heat dissipation block is preferably made of Cu or Al.

Thereby, by configuring the heat dissipation block with a material having high thermal conductivity, heat generated in the BHLED can be smoothly flowed to the heat dissipation block, and a decrease in light emission efficiency due to heat can be prevented.

By using the block hybrid light emitting device of the present invention, the effect of the Ag electrode film (up by about 20%), the effect of sapphire groove processing (up by about 20%), and the light of the AlN ceramic substrate compared to the conventional hybrid light emitting device. Luminous efficiency is 20% × 20 due to synergistic effects such as absorption-less effect (up 20%), heat dissipation effect, and heat dissipation effect (α) of bump electrode under the electrode.
% × 20% + α is improved by 80% or more, and a large current is possible.

Further, the block hybrid light emitting device of the present invention can easily constitute an illumination light source driven by an AC 100V voltage.

In addition, the AC-driven light source for illumination is mounted in a place where the block hybrid light-emitting element is integrated with the heat dissipation block, so that the heat flow from the light-emitting element is smooth, and the decrease in luminous efficiency due to heat generation is suppressed. The reflection parabola of the plated mortar-shaped depression can efficiently extract light to the front surface of the illumination light source.

  Embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 shows details of the block hybrid light emitting device of the present invention, in which (a) is a front view, (
(b) is a plan view, (c) is a plan view of the block sub-mount element, and (d) is an equivalent circuit of the block hybrid light emitting element.

In the figure, a block light emitting element 2 is a blue (ultraviolet) single light emitting element in which a GaN compound semiconductor is laminated on a sapphire substrate 4 and arranged in 2 rows and 2 columns. The n-side electrode 6b is formed on the upper surface of the n-type layer of the compound semiconductor, and the p-side electrode 6a is formed on the upper surface of the p-type layer. The p-side electrode is formed by a method in which the Ag electrode film is replaced with an Au-based transparent electrode in contact with the p-type layer, and has a high Ag reflectance while maintaining good ohmic characteristics with the p-type layer. . Au covers the outermost surface with a Ni layer on top of it (
Here, in the case where Au—Sn eutectic bonding is used for flip chip bonding, an Sn film or an Au—Sn alloy layer is required on the Au surface. ). The chip size of each single light emitting element and the electrode pattern of the n-side electrode 6b and the p-side electrode 6a are substantially the same size as the light emitting element 71 shown in FIG.

On the upper surface of the sapphire 4, a portion corresponding to the boundary of the single light emitting element has a width of 150 μm and a depth of 1
The groove 5 of about 00 μm is processed, and the light generated in the single light emitting element can be efficiently extracted out of the main extraction surface of sapphire.

The block submount element 3 includes electrodes 7a and 7b corresponding to positions where the electrodes of the four single light emitting elements of the block light emitting element 2 are flip-chip mounted on the upper surface of a white AlN ceramic substrate 9 having a thickness of 0.2 mm. And 7c are formed thereon, and bump electrodes 8a and 8b are formed on the n-side electrode 6b and the p-side electrode 6a of each single light emitting element.
In particular, the bump electrode 8a is formed so as to be in contact with the entire surface of the anode electrode 6a in order to efficiently release heat from the light emitting layer of the single light emitting element. The thickness of the bump electrode is about 10 to 30 μm. Further, an auxiliary circuit for connecting each single light emitting element is also provided on the electrode 7c.
The single light emitting elements in each row are connected in series after flip chip mounting, and the rows are electrically independent. Furthermore, bonding pads for bonding wires are formed on the electrodes 7a and 7b. As a method of flip-chip bonding the block light emitting element 2 onto the block submount element 3, Au-Sn eutectic bonding using an Au bump electrode or the like is used.

By using the block hybrid light-emitting device 1 having the above-described configuration, the effect of the Ag electrode film, the effect of sapphire groove processing, the light absorption-less effect and the heat dissipation effect of the AlN ceramic substrate, and the Ard electrode can be obtained. Due to a synergistic effect such as the heat dissipation effect of the lower bump electrode, the luminous efficiency is improved by 80% or more by 20% × 20% × 20% + α. Further, the block hybrid light emitting element 1 can easily constitute an illumination light source driven by an AC voltage of 100V.

2A and 2B show the details of the AC block hybrid light-emitting element of the present invention, where FIG. 2A is a plan view, FIG. 2B is a plan view of a block sub-mount element, and FIG. 2C is an equivalent of the AC block hybrid light-emitting element. Circuit.

In the figure, the AC block light-emitting element 12 has an electrode arrangement of 90 in the adjacent row.
The arrangement is the same as that of the block hybrid light-emitting element 1 of FIG. 1 except that the arrangement is rotated and that the AC block submount element 13 has an electrode arrangement corresponding thereto. Since the block hybrid light-emitting element 11 for alternating current has the polarity of adjacent rows reversed, it is easy to make a structure in which even-numbered single light-emitting elements emit light in the half cycle of alternating current, and odd-numbered rows emit light in the remaining half cycle. It is easier to construct an illumination light source driven by an alternating current 100V voltage.

FIG. 3 shows details of a block hybrid light emitting device using a block white light emitting device in which a phosphor is applied to the block light emitting device, wherein (a) is a front view, (b) a plan view, and (c) is block white light emitting. FIG. 4D is a front view of the element, and FIG.

In the figure, on the side of the sapphire substrate 4 where the groove 5 of the block light emitting element 12 is processed, the phosphor 10
2 is applied to form a block white light-emitting element 22 that emits white light. The block hybrid light emitting element 21 that emits white light is most used as an illumination light source.

4A and 4B show details of a block hybrid light emitting device using a 3 × 3 block white light emitting device, where FIG. 4A is a front view, FIG. 4B is a plan view, and FIG. 4C is a plan view of a block submount device. .

5A and 5B show details of the block white light-emitting element of 3 rows and 3 columns, (a) a front view and (b) a plan view on the electrode side.

In the figure, it is essentially the same as the configuration of FIG. 2 except that it is scaled up to 3 rows and 3 columns. In this case, an illumination light source with higher illuminance can be formed in which the white light emitting elements in the first and third rows emit light in the half cycle of alternating current, and the two rows of white light emitting elements emit light in the remaining half cycle.

6A and 6B show the details of the illumination light source according to the first embodiment of the present invention, in which FIG. 6A is a plan view, FIG. 6B is a cross-sectional view taken along line AA in FIG. Is an equivalent circuit of the illumination light source 41.

In the figure, the illumination light source 41 includes four light-emitting block 50 made of metal such as copper, which has a white light emitting block hybrid light-emitting element 1a having an Ag electrode film formed on the p-side electrode. One resistor 44 is disposed on the bottom surface of the mortar-shaped recess 46 and soldered onto the wiring circuit 43 formed on the surface of the heat dissipation block 50 (this is to adjust the current flowing through each block hybrid light emitting element 1a). Au wire 4 through
7 is connected to the block hybrid light emitting element 1a. The external AC power supply 49 is
It is supplied from the electrode terminal 45 connected to the wiring circuit 43. Here, the four block hybrid light emitting elements 1a are connected so that the two block hybrid light emitting elements 1a emit light in a half cycle of the AC power supply, and the remaining two emit light in a reverse half cycle. . That is, (c)
As shown in the equivalent circuit of FIG.

A convex peripheral wall 50a is formed around the surface of the heat dissipating block 50 to form a bowl.
The block hybrid light emitting element 1 a, the wiring circuit 43, the resistor 44, the Au wire 47, and all of the electrode terminals 45 and a part of the electrode terminal 45 disposed in the container are sealed with a sealant 48. The surrounding surface including the inner surface of the mortar-shaped depression 46 where the block hybrid light emitting element 1a is located is gloss-plated with Ag having a high reflectance. Alternatively, the entire surface of the heat dissipation block 50 may be plated with Ag.

Here, the size of the block hybrid light emitting element 1a is a square white with a side of about 0.64 mm and a block white light emitting element with a thickness of about 0.2 mm, and a rectangle of about 1.14 mm × about 0.74 mm with a thickness of about It consists of a 0.2mm block submount element. Of course, this size can be arbitrarily changed.

The illumination light source 41 is driven by an external AC power supply voltage of about AC 10 V, and a resistor 44 is set so that an AC current of about 100 mA flows through each single light emitting element of the block hybrid light emitting element 1a.

7A and 7B show details of the illumination light source according to the second embodiment of the present invention. FIG. 7A is a plan view, FIG. 7B is a longitudinal sectional view, and FIG. 7C is an equivalent circuit of the illumination light source 51. .

In the figure, the illumination light source 51 includes an AC block hybrid light emitting element 21 in which an Ag electrode film is formed on a p-side electrode, and eight mortars formed on a metal heat dissipation block 60 having good thermal conductivity such as copper. One resistor 54 is disposed on the bottom surface of each recess 56 and soldered onto the wiring circuit 53 formed on the surface of the heat dissipation block 60 (this flows to the AC block hybrid light emitting element 21 connected in series). Is connected to the leftmost AC block hybrid light emitting element 21 by an Au wire 57, and the other seven AC block hybrids are connected by the Au wire 57 and the wiring circuit 53. The light emitting element 21 is connected in series. An external AC power supply 59 is supplied from an electrode terminal 55 connected to the wiring circuit 53. Here, in the eight AC block hybrid light emitting elements 21, the single light emitting element in the first row of the AC block hybrid light emitting element 21 emits light in the half cycle of the AC power supply, and the second row in the reverse half cycle. The single light emitting elements are connected to emit light. That is, they are connected as shown in the equivalent circuit of (c).

A convex peripheral wall 60a is formed around the surface of the heat dissipating block 60 to form a bowl,
The AC block hybrid light-emitting element 21, the wiring circuit 53, the resistor 54 and the Au wire 57, and the electrode terminal 55 are all sealed with a sealant 58 so as to cover a part of the electrode terminal 55. Further, the surrounding surface including the inner surface of the mortar-shaped depression 56 where the AC block hybrid light emitting element 21 is located is brightly plated with Ag having a high reflectance. Alternatively, the entire surface of the heat dissipation block 60 may be plated with Ag.

Here, the size of the AC block hybrid light emitting element 21 is about 0.64 mm on one side.
Block white light emitting element for alternating current with a thickness of about 0.2 mm and about 1.14 mm × about 0 mm
. It consists of a block submount element for alternating current having a rectangular shape of 74 mm and a thickness of about 0.2 mm.
Of course, this size can be arbitrarily changed.

The illumination light source 51 is driven by an external AC 100V power source, and a resistor 54 is set so that an AC current of about 100 mA flows through each single light emitting element of the AC block hybrid light emitting element 21.

The two AC-driven illumination light sources have a block hybrid light-emitting element as a heat dissipation block 5
Since it is mounted in a place integrated with 0 and 60, the flow of heat from the light emitting element is smooth, the decrease in light emission efficiency due to heat generation is suppressed, and the reflection parabola of the Ag-plated mortar-shaped depression is used as the light source for illumination. Light can be extracted efficiently to the front of the.

2A and 2B show details of the 2 × 2 block hybrid light emitting device of the present invention, where FIG. 4A is a front view, FIG. 4B is a plan view, FIG. 4C is a plan view of a block submount device, and FIG. It is. 2A and 2B are details of the AC hybrid block light emitting device of 2 rows and 2 columns of the present invention, wherein FIG. 5A is a plan view, FIG. 5B is a plan view of an AC block submount device, and FIG. It is the detail of the block hybrid light emitting element for alternating current of 2 rows 2 columns white light emission, (a) is a front view, (b) is a top view, (c) is a front view of the block white light emitting element for alternating current, (d ) Is a plan view on the electrode side. It is the detail of the block hybrid light emitting element for alternating current of white light emission of 3 rows 3 columns, (a) Front view, (b) is a top view, (c) is a top view of the block submount element for alternating current. It is the detail of the block white light emitting element for alternating current of 3 rows 3 columns, (a) is a front view, (b) is a top view by the side of an electrode. It is the detail of the light source for illumination of this invention, Comprising: (a) is a top view, (b) is a longitudinal cross-sectional view by the AA arrow of (a), (c) is an equivalent circuit. It is the detail of the light source for illumination of this invention, Comprising: (a) is a top view, (b) is a longitudinal cross-sectional view by the BB arrow of (a), (c) is an equivalent circuit. It is a hybrid light emitting element of a prior art example, Comprising: (a) is a top view, (b) is a front view, (c) is an equivalent circuit schematic. It is a block hybrid light emitting element of a prior art example, (a) is a front view, (b) is a plan view, (c) is an equivalent circuit diagram, and (d) is a plan view of a submount element (zener diode).

Explanation of symbols

1 block hybrid light emitting element 1a block hybrid light emitting element 2 block light emitting element 3 block submount element 4 sapphire substrate 5 groove 6a p-side electrode 6b n-side electrode 7a electrode 7b electrode 7c electrode (auxiliary circuit)
8a Bump electrode 8b Bump electrode 9 AlN ceramic substrate 10 Phosphor 11 AC block hybrid light emitting element 12 AC block light emitting element 13 AC block submount element 21 White light emitting AC block hybrid light emitting element 22 AC block white light emitting element 31 White light-emitting AC block hybrid light-emitting element 32 AC block white light-emitting element 33 AC block submount element 41 Light source for illumination 43 Wiring circuit 44 Resistance 45 Electrode terminal 46 Mortar-shaped depression 47 Au wire 48 Sealant 49 External AC Power supply 50 Heat radiation block 50a Perimeter wall 51 Illumination light source 53 Wiring circuit 54 Resistance 55 Electrode terminal 56 Mortar-shaped depression 57 Au wire 58 Sealant 59 External AC power supply 60 Heat radiation block 60a Perimeter wall

Claims (12)

A block light emitting device (referred to as BLED) in which a plurality of single light emitting devices are formed in a matrix on a rectangular epitaxial wafer piece;
A block submount element (referred to as BSUB) having an auxiliary circuit for connecting the single light emitting element on the insulating substrate at a position corresponding to each electrode of the single light emitting element;
In a block hybrid light emitting device (referred to as BHLED) in which the BLED is flip-chip mounted on the BSUB via a bump electrode between opposing electrodes.
The BHLED is characterized in that the single light emitting elements in each row are connected in series, and each row is electrically independent. An AC BLED in which the single light-emitting elements in adjacent rows of the BLED are arranged in reverse polarity;
The AC BSU in which the electrodes in the adjacent rows of the BSUB are reversely arranged corresponding to the AC BLED
B and
In the alternating current BHLED in which the alternating current BLED is flip-chip mounted via a bump electrode between the opposing electrodes on the alternating current BSUB,
The AC BHLED, wherein the single light emitting elements in each row are connected in series, and each row is electrically independent. The BHLED according to claim 1 or 2 or a BHLED for alternating current,
The bump electrode in contact with the anode electrode of the single light emitting element is connected in such a size as to cover almost the entire surface of the anode electrode so that heat can be efficiently radiated.
D or BHLED for AC. The BHLED according to claim 1 or 2 or a BHLED for alternating current,
The BSUB or AC BHLED is characterized in that the material of the BSUB or AC BSUB is made of an AlN ceramic substrate having a good thermal conductivity of a white insulator. The BHLED according to claim 1 or 4 or a BHLED for alternating current,
The single light emitting element of the BLED or the BLED for alternating current is G having sapphire as a substrate.
BHLE characterized in that it is an aN-based blue (ultraviolet) LED, the sapphire substrate side is the main light extraction surface, and the main light extraction surface is grooved to improve the light extraction efficiency.
D or BHLED for AC. The BHLED according to claim 5 or the BHLED for alternating current,
A phosphor is applied on the side surface of the sapphire substrate and the main light extraction surface of the BLED or AC BLED, and a block white light emitting element (referred to as BWLED) or AC BWL
A BHLED or an AC BHLED characterized by forming an ED. The BHLED according to claim 1 or BHLED for alternating current,
BHLED or AC BHLED, wherein Ag having high reflectivity is used for the anode electrode of the BLED or AC BLED. A heat dissipating block comprising a plurality of the mortar-shaped depressions in which one BHLED is disposed on the bottom surface of the BHLED and the mortar-shaped depressions, and a heat-conductive metal having a top surface provided with a convex wall part on the periphery;
An electrode terminal for connecting to a wiring circuit and a wiring member formed on the top surface of the heat dissipating block and an external driving power source;
An illumination light source comprising the BHLED and a sealant that seals substantially the entire top surface of the heat dissipation block. The illumination light source according to claim 8,
A light source for illumination, wherein electrodes in the same row of the BHLEDs positioned on the bottom surfaces of the plurality of mortar-shaped depressions are connected in series. The illumination light source according to claim 8 or 9,
An illumination light source, wherein the BHLED is a BHLED or an AC BHLED using Ag having a high reflectivity for an anode electrode of the BLED or the AC BLED, and is driven by an AC. The illumination light source according to claim 8,
A light source for illumination, wherein the bottom surface and the side wall of the mortar-shaped depression are Ag-plated with high reflectivity. The illumination light source according to claim 11,
The light source for illumination, wherein the heat dissipation block is made of Cu or Al.

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