JP2005043883A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005043883A5 JP2005043883A5 JP2004202743A JP2004202743A JP2005043883A5 JP 2005043883 A5 JP2005043883 A5 JP 2005043883A5 JP 2004202743 A JP2004202743 A JP 2004202743A JP 2004202743 A JP2004202743 A JP 2004202743A JP 2005043883 A5 JP2005043883 A5 JP 2005043883A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon atoms
- group
- compound
- organic group
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
すなわち本発明は、(a)一般式(1)で表される構造単位を主成分とするポリマー、(b)2種以上の光酸発生剤、(c)アルコキシメチル基含有化合物を含有し、(b)2種以上の光酸発生剤のうち、少なくとも1種がキノンジアジド化合物であり、少なくとも1種がスルホニウム塩、ホスホニウム塩、ジアゾニウム塩から選ばれる1種以上であることを特徴とする感光性樹脂前駆体組成物である。 That is, the present invention contains (a) a polymer mainly composed of the structural unit represented by the general formula (1), (b) two or more photoacid generators, and (c) an alkoxymethyl group-containing compound , (B) Among the two or more photoacid generators, at least one is a quinonediazide compound, and at least one is at least one selected from a sulfonium salt, a phosphonium salt, and a diazonium salt . It is a resin precursor composition.
本発明では(b)成分として光酸発生剤を2種以上用いる。少なくとも1種はポジ型の感光性を発現する目的であり、少なくとも1種は該ポジ型を発現する光酸発生剤が露光によって発生させた酸成分を適度に安定化させる目的で用いる。この結果、露光後放置安定性に優れた感光性樹脂組成物を得ることができる。ポジ型の感光性を発現する光酸発生剤は、キノンジアジド化合物である。該キノンジアジド化合物はポリヒドロキシ化合物にキノンジアジドのスルホン酸がエステルで結合したもの、ポリアミノ化合物にキノンジアジドのスルホン酸がスルホンアミド結合したもの、ポリヒドロキシポリアミノ化合物にキノンジアジドのスルホン酸がエステル結合および/またはスルホンアミド結合したものなどが挙げられる。これらポリヒドロキシ化合物やポリアミノ化合物の全ての官能基がキノンジアジドで置換されていなくても良いが、官能基全体の50モル%以上がキノンジアジドで置換されていることが好ましい。50モル%未満であるとアルカリ現像液に対する溶解性が高くなり過ぎ、未露光部とのコントラストが得られず、所望のパターンを得られない可能性がある。このようなキノンジアジド化合物を用いることで、一般的な紫外線である水銀灯のi線(365nm)、h線(405nm)、g線(436nm)に感光するポジ型の感光性樹脂前駆体組成物を得ることができる。 In the present invention, two or more photoacid generators are used as the component (b). At least one type is used for the purpose of developing positive photosensitivity, and at least one type is used for the purpose of appropriately stabilizing the acid component generated by exposure by the photoacid generator that develops the positive type. As a result, a photosensitive resin composition having excellent post-exposure storage stability can be obtained. Photoacid generator which express positive photosensitivity is Ru der quinonediazide compound. The quinonediazide compound is a compound in which a sulfonic acid of quinonediazide is bonded to a polyhydroxy compound with an ester, a compound in which a sulfonic acid of quinonediazide is bonded to a polyamino compound, and a sulfonamide of quinonediazide is bonded to a polyhydroxypolyamino compound and / or sulfonamide. Examples include those that are combined. Although all the functional groups of these polyhydroxy compounds and polyamino compounds may not be substituted with quinonediazide, it is preferable that 50 mol% or more of the entire functional groups are substituted with quinonediazide. If it is less than 50 mol%, the solubility in an alkali developer becomes too high, and a contrast with an unexposed portion cannot be obtained, and a desired pattern may not be obtained. By using such a quinonediazide compound, a positive photosensitive resin precursor composition sensitive to i-line (365 nm), h-line (405 nm), and g-line (436 nm) of a mercury lamp, which is a general ultraviolet ray, is obtained. be able to.
本発明の(b)成分として用いる光酸発生剤のうち、露光によって発生させた酸成分を適度に安定化させる光酸発生剤は、スルホニウム塩、ホスホニウム塩、ジアゾニウム塩から選ばれる化合物である。これらを用いることで露光後放置安定性が著しく向上する。本発明の感光性樹脂前駆体組成物から得られる樹脂組成物は永久膜として使用するため、リン等が残存することは環境上好ましくなく、また膜の色調も考慮する必要があることから、これらの中ではスルホニウム塩が好ましく用いられる。スルホニウム塩のうち、一般式(14)〜(16)で表される構造が好ましく用いられる。 Among photo-acid generator to be used as component (b) of the present invention, the photoacid generator to appropriately stabilize the acid component that caused by exposure, Ru compound der selected sulfonium salts, phosphonium salts, diazonium salts . By using these, the standing stability after exposure is remarkably improved. Since the resin composition obtained from the photosensitive resin precursor composition of the present invention is used as a permanent film, it is not environmentally preferable that phosphorus or the like remains, and it is necessary to consider the color tone of the film. Of these, sulfonium salts are preferably used. Of the sulfonium salts, structures represented by the general formulas (14) to (16) are preferably used.
一般式(14)〜(16)のR41〜R43はそれぞれ同じでも異なっていてもよく、炭素数1〜20より選ばれる有機基を示す。R44、R45は単結合、炭素数1〜20より選ばれる有機基を示す。Z−はR46SO3 −、R46COO−、SbF6 −から選ばれるアニオン部を示す。R 46 は炭素数1〜20より選ばれる有機基を示す。一般式(14)で表されるスルホニウム塩の具体例を下記に示すが、これらに限定されない。 R 41 to R 43 in the general formulas (14) to (16) may be the same as or different from each other, and represent an organic group selected from 1 to 20 carbon atoms. R 44 and R 45 represent a single bond or an organic group selected from 1 to 20 carbon atoms. Z − represents an anion moiety selected from R 46 SO 3 − , R 46 COO − and SbF 6 — . R 46 represents an organic group selected from 1 to 20 carbon atoms. Specific examples of the sulfonium salt represented by the general formula (14) are shown below, but are not limited thereto.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004202743A JP4595412B2 (en) | 2003-07-09 | 2004-07-09 | Photosensitive resin precursor composition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003194160 | 2003-07-09 | ||
JP2004202743A JP4595412B2 (en) | 2003-07-09 | 2004-07-09 | Photosensitive resin precursor composition |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005043883A JP2005043883A (en) | 2005-02-17 |
JP2005043883A5 true JP2005043883A5 (en) | 2007-08-16 |
JP4595412B2 JP4595412B2 (en) | 2010-12-08 |
Family
ID=34277239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004202743A Expired - Lifetime JP4595412B2 (en) | 2003-07-09 | 2004-07-09 | Photosensitive resin precursor composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4595412B2 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7435525B2 (en) | 2004-05-07 | 2008-10-14 | Hitachi Chemical Dupont Microsystems Ltd. | Positive photosensitive resin composition, method for forming pattern, and electronic part |
US7638254B2 (en) | 2004-05-07 | 2009-12-29 | Hitachi Chemical Dupont Microsystems Ltd | Positive photosensitive resin composition, method for forming pattern, and electronic part |
JP4918968B2 (en) * | 2005-05-09 | 2012-04-18 | 日立化成デュポンマイクロシステムズ株式会社 | Positive photosensitive resin composition, pattern manufacturing method, and electronic component |
EP1909142B1 (en) | 2005-06-30 | 2015-06-24 | Toray Industries, Inc. | Photosensitive resin composition and adhesion enhancer |
JP4655914B2 (en) * | 2005-12-13 | 2011-03-23 | 東レ株式会社 | Photosensitive siloxane composition, cured film formed therefrom, and device having cured film |
KR101351311B1 (en) * | 2006-03-08 | 2014-01-14 | 주식회사 동진쎄미켐 | Photosensitive resin composition |
JP4935272B2 (en) * | 2006-09-26 | 2012-05-23 | 東レ株式会社 | Positive photosensitive resin composition |
JP5028059B2 (en) * | 2006-09-28 | 2012-09-19 | 富士フイルム株式会社 | Photosensitive resin composition, method for producing cured relief pattern using the same, and semiconductor device |
EP1970761B1 (en) | 2007-03-14 | 2012-02-29 | FUJIFILM Corporation | Photosensitive composition and method of producing a cured relief pattern |
JP5241280B2 (en) * | 2007-04-06 | 2013-07-17 | 旭化成イーマテリアルズ株式会社 | Positive photosensitive resin composition |
JP5502401B2 (en) * | 2008-09-02 | 2014-05-28 | 住友化学株式会社 | COMPOUND, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE COMPOUND |
KR101023089B1 (en) | 2008-09-29 | 2011-03-24 | 제일모직주식회사 | Positive type photosensitive resin composition |
JP5562585B2 (en) * | 2009-07-06 | 2014-07-30 | 旭化成イーマテリアルズ株式会社 | Photosensitive resin composition |
JP4959778B2 (en) * | 2009-12-10 | 2012-06-27 | 信越化学工業株式会社 | Photocurable resin composition, film adhesive using the composition, and adhesive sheet |
CN102292675B (en) | 2009-12-28 | 2012-08-22 | 东丽株式会社 | Positive-type photosensitive resin composition |
KR101333704B1 (en) | 2009-12-29 | 2013-11-27 | 제일모직주식회사 | Positive type photosensitive resin composition |
US8685615B2 (en) | 2010-06-17 | 2014-04-01 | Nissan Chemical Industries, Ltd. | Photosensitive resist underlayer film forming composition |
KR101400192B1 (en) | 2010-12-31 | 2014-05-27 | 제일모직 주식회사 | Positive photosensitive resin composition, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer |
EP2902447B1 (en) | 2012-09-25 | 2020-10-28 | Toray Industries, Inc. | Resin composition, cured film, laminated film, and method for manufacturing semiconductor device |
JP7066978B2 (en) * | 2017-04-27 | 2022-05-16 | 住友ベークライト株式会社 | Photosensitive resin composition |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06201901A (en) * | 1992-11-10 | 1994-07-22 | Tosoh Corp | Positive type photosensitive material for forming microlens |
JPH07168359A (en) * | 1993-12-15 | 1995-07-04 | Tosoh Corp | Photosensitive material for microlens |
JP3799957B2 (en) * | 2000-04-28 | 2006-07-19 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive polymer composition, pattern manufacturing method and electronic component |
JP4449159B2 (en) * | 2000-04-28 | 2010-04-14 | 日立化成デュポンマイクロシステムズ株式会社 | Photosensitive polymer composition, pattern manufacturing method, and electronic component |
JP4082041B2 (en) * | 2001-02-26 | 2008-04-30 | 東レ株式会社 | Positive photosensitive resin precursor composition, electronic component using the same, and display device |
-
2004
- 2004-07-09 JP JP2004202743A patent/JP4595412B2/en not_active Expired - Lifetime
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2005043883A5 (en) | ||
JP3581032B2 (en) | Silicon-containing polymer and chemically amplified resist composition containing the same | |
JP2001330947A5 (en) | ||
JP2002055452A (en) | Positive resist composition and base material with resist layer of the same | |
JP2002221794A5 (en) | ||
JP2008268931A5 (en) | ||
JP2004117688A5 (en) | ||
JP2002131917A5 (en) | ||
KR980002109A (en) | Photosensitive polyimide precursor composition, and pattern formation method using the same | |
JP2004101706A5 (en) | ||
JP2004271629A5 (en) | ||
KR102397614B1 (en) | Method of forming pattern | |
JP2001051422A (en) | Radiation sensitive resin composition | |
JP2006276760A5 (en) | ||
JP2002202608A5 (en) | ||
KR102397613B1 (en) | Photosensitive resin composition | |
JP2004287262A5 (en) | ||
CN103930828B (en) | Hydridization photo-corrosion-resisting agent composition and its pattern formation method of use | |
JP2001318464A5 (en) | ||
JP2004101642A5 (en) | ||
JP2001100402A5 (en) | ||
JP2003192665A5 (en) | ||
JP2004279471A5 (en) | ||
JP2001100417A5 (en) | ||
JP2002006495A5 (en) |