JP2005043146A - Probe card and its manufacturing method, wafer prober, and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe card, its manufacturing method, a wafer prober, and a manufacturing method of a semiconductor device, for achieving stable measurement and probe test by reducing the effect of noise while meeting the miniaturization of a terminal electrode to be measured. <P>SOLUTION: A group 12 of needle-type probes severally contacting with a group DIN of input terminal electrodes in a chip region CHIP to be measured is provided on one side of an opening part 11 in a wiring substrate 10 of a probe card while a group 13 of lithography-type probes severally contacting with a group DOUT of output terminal electrodes is provided on the other side. The group 13 includes a buffer member 134 and a reinforcement plate 135. A DIN-side signal transmission channel also includes a power source system while a DOUT-side signal transmission channel mainly includes a signal system. Among signal transmission channels of a wiring substrate 10, wiring 101 within the wiring substrate 10 is preferable for signal system wiring and for output system wiring, while wiring 102 on an upper part of the wiring substrate 10 is preferable for power source system wiring. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a probe card for measuring electrical characteristics by mechanically bringing a probe into contact with a pad of an LSI chip in a wafer state, a manufacturing method thereof, a wafer prober, and a manufacturing method of a semiconductor device.
[0002]
[Prior art]
The probe card is used for a test in a wafer state before the IC chip assembly process. The probe card has a probe (also referred to as a probe pin, a needle, or a cantilever) that is brought into contact with a terminal electrode (an upper surface of a connection portion such as an Al pad, an Au bump, or a solder bump) in a chip area that is a measurement area. Using this probe, a test signal or test pattern is input to the chip to be measured, and a result output is transmitted.
[0003]
The probe card is electrically connected to the wafer prober. A wafer prober is built with a tester to build a test system. The tester determines the quality of the function by comparing the output value from the IC chip area with the expected value via the probe card. In addition, I / O signals, analog values such as power supply voltage and current are measured. An IC chip selected as a non-defective product through the wafer probing test is sent to the assembly process.
[0004]
The diversification and miniaturization of IC chips are remarkable, and the number of data input / output is increasing. As a result, the number of pads per chip increases, and many pads are arranged at a narrow pitch around the chip. In this case, it becomes difficult to apply each probe of the probe card to each pad (or bump). Taking a liquid crystal driver IC product as an example, it is necessary to pay considerable attention to the stable contact of each probe on the miniaturized electrode pad centered on the output terminal.
[0005]
Conventionally, there is also a technique in which a tip of a wiring pattern formed by plating extending from a flexible substrate is used as a probe pin (see, for example, Patent Document 1). Accordingly, it is possible to cope with a probe test of an IC in which the terminal electrodes are narrowed.
[0006]
[Patent Document 1]
JP-A-6-324081 (FIG. 1)
[0007]
[Problems to be solved by the invention]
Even if the needle-type probe is appropriately configured for the electrode pads that are becoming increasingly finer, such as the output side of LCD driver IC products, there are problems with the electrical connection between the probe card and the wafer prober and the stabilization of the measurement. is there. The reason is as follows. The probe card substrate is electrically connected using a test head connected to the tester and a relay circuit substrate. The wiring between the probe card substrate and the relay circuit base material is mainly in-substrate wiring (multi-wire) due to the limit of the number of jumper wirings. In many cases, the wiring in the substrate is in a state where the power supply system and the signal system are intricately intersecting each other. As a result, there is a risk of being affected by noise and not being able to maintain measurement stability.
[0008]
Moreover, the probe pin plated on the flexible substrate as in [Patent Document 1] has the following problems even if it can cope with fine contacts. When the pattern wiring capacity on the flexible substrate is increased, or when the power supply wiring and the signal wiring are adjacent to each other, the periphery of the power supply is easily affected by noise. As a result, the measurement stability may not be maintained.
[0009]
The present invention has been made in consideration of the above circumstances, and a probe card that achieves stable measurement and probe test by reducing the influence of noise while corresponding to miniaturization of the terminal electrode to be measured, and a method of manufacturing the same A wafer prober and a method for manufacturing a semiconductor device are provided.
[0010]
[Means for Solving the Problems]
The probe card according to the present invention is a probe card that is opposed to a measured chip region on a wafer and is responsible for transmitting and receiving signals, and has a needle type that contacts each first terminal electrode group in the measured chip region. A first probe group, a second probe group having a lithography type to be brought into contact with a second terminal electrode group having an arrangement pitch smaller than that of the first terminal electrode group in the measured chip region, and the first And a wiring board on which signal transmission paths of each of the first probe group and the second probe group are arranged.
[0011]
According to the probe card according to the present invention, in the measured chip region, the first terminal electrode group has a relatively large arrangement pitch at the center of the input terminal and includes a power supply system. It is preferable to cope with the arrangement pitch of one probe group. The second pole group has a relatively small arrangement pitch at the center of the output terminal and includes a signal system. Therefore, it is preferable that the second pole group corresponds to the arrangement pitch of the second probe group having the lithography type. is there.
[0012]
The probe card according to the present invention has the following preferable features in order to obtain reliability.
The second probe group includes at least a buffer member and a reinforcing member between the second probe group and the wiring board.
In the wiring board, the signal wiring and the output wiring among the signal transmission paths include wiring inside the wiring board, and the power wiring includes wiring on the wiring board.
[0013]
The probe card according to the present invention is a probe card that is opposed to a measured chip region on a wafer and is responsible for transmitting and receiving signals, and has a needle type that contacts each first terminal electrode group in the measured chip region. A first probe group and a second probe having a wiring supported by a flexible substrate to be brought into contact with a second terminal electrode group having an arrangement pitch smaller than that of the first terminal electrode group in the measured chip region And a wiring board on which signal transmission paths of the first probe group and the second probe group are arranged.
[0014]
According to the probe card according to the present invention, in the measured chip region, the first terminal electrode group has a relatively large arrangement pitch at the center of the input terminal and includes a power supply system. It is preferable to cope with the arrangement pitch of one probe group. The second pole group has a relatively small arrangement pitch at the center of the output terminal and includes a signal system. Therefore, the second pole group corresponds to the arrangement pitch of the second probe group having the wiring supported by the flexible substrate. It is preferable to do this.
[0015]
The probe card according to the present invention has the following preferable features in order to obtain reliability.
The second probe group is characterized in that a bump electrode is disposed at the tip of the wiring, and at least a buffer member and a reinforcing member are provided between the flexible substrate and the wiring substrate.
In the wiring board, the signal wiring and the output wiring among the signal transmission paths include wiring inside the wiring board, and the power wiring includes wiring on the wiring board.
[0016]
The probe card manufacturing method according to the present invention has a needle type for bringing the first terminal electrode group in the measured chip region into contact with the connection region on one side of the wiring board on which a predetermined signal transmission path is arranged. A step of arranging the first probe group; and a second terminal electrode group having an arrangement pitch smaller than the first terminal electrode group in the chip area to be measured in the connection region on the other side of the wiring board. Providing a second probe group having wiring supported by a flexible substrate for contact, and adjusting at least the position or pressing force of each tip of the second probe group At least a buffer member and a reinforcing member are provided between the flexible substrate and the wiring substrate.
[0017]
According to the method for manufacturing a probe card according to the present invention, the first probe group and the second probe group can obtain the same needle pressure with respect to the contact with the measured chip region. At least a buffer member and a reinforcing member are provided between the flexible substrate and the wiring substrate.
[0018]
The wafer prober according to the present invention is a semiconductor wafer installation area, a signal transmission mechanism responsible for transmission and reception of signals related to electrical characteristic inspection in the semiconductor wafer, and generation of signals to be used for the electrical characteristic inspection, A wafer prober having a tester body in which a test system related to analysis is constructed, and a probe card that is opposed to a measured chip region on the semiconductor wafer and that transmits and receives signals is a first one in the measured chip region. A first probe group having a needle type to be brought into contact with each of the terminal electrode groups and a second terminal electrode group having a smaller arrangement pitch than the first terminal electrode group in the measured chip region. And a second probe group having a type.
[0019]
According to the above-mentioned wafer prober according to the present invention, a suitable probe card is used in accordance with the terminal electrode in the measured chip region. In the measured chip region, the first terminal electrode group has a relatively large arrangement pitch at the center of the input terminal and includes a power supply system, and therefore corresponds to the arrangement pitch of the first probe group having the needle type. Is preferred. The second pole group has a relatively small arrangement pitch at the center of the output terminal and includes a signal system. Therefore, it is preferable that the second pole group corresponds to the arrangement pitch of the second probe group having the lithography type. is there.
[0020]
A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device including a step of performing a probe test using a probe card having any of the above-described features, and includes a first terminal electrode in a measured chip region And a step of performing the probe test by bringing the first probe group and the second probe group into contact with each other so as to correspond to the group and the second terminal electrode group, respectively. And
According to the semiconductor device manufacturing method of the present invention, the accuracy of the probe test is improved. High reliability can be obtained in the semiconductor device.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
1 (a) and 1 (b) show the main configuration of the probe card according to the first embodiment of the present invention, respectively (a) is an overview from the top, and (b) is an arbitrary view from the side. It is the schematic which shows the cross section.
The wiring board 10 constituting the probe card bears a signal exchange while facing a plurality of chip regions CHIP on the semiconductor wafer WF. The wiring board 10 is mounted on, for example, a wafer prober connected to a test head (not shown). Wafer WF and measured chip region CHIP are indicated by broken lines. This chip region CHIP is, for example, a liquid crystal driver IC.
[0022]
An external terminal, here a bump electrode BMP, is provided in the measured chip region CHIP. The measured chip region CHIP is divided into an input terminal electrode group DIN and an output terminal electrode group DOUT, and the output terminal electrode group DOUT side has a narrower bump arrangement than the input terminal electrode group DIN.
[0023]
An opening 11 is provided in the wiring board 10. Provided on one side of the opening 11 is a probe group 12 having a needle type to be brought into contact with the input terminal electrode group DIN in the measured chip region CHIP. Further, a probe group 13 having a lithography type is provided on the other side of the opening 11 so as to be brought into contact with the output terminal electrode group DOUT in the measured chip region CHIP. The probe group 12 may be composed of needles such as tungsten or Ni alloy, and the extension may be multilayered. In the probe group 13, a flexible wiring 132 made of copper or Ni alloy is formed on a flexible substrate 131 made of polyimide or the like by using a photolithography technique. A bump electrode 133 for contact with a terminal electrode is formed at the tip of the flexible wiring 132. The flexible substrate 131 has a form supported by a reinforcing plate 135 including a buffer member 134 such as polyimide or silicon rubber, a resin material, metal, glass, or the like.
[0024]
The main part of the probe card manufacturing method will be described below with reference to FIG. The probe group 12 is, for example, a configuration of a resin unit 121 to which a needle extension source is fixed, and an electrical connection region between a connection portion on the edge of the unit 121 corresponding to each probe needle and a connection portion on the wiring board 10 side. 21. Attach so that they are connected to each other. The probe group 13 includes, for example, a flexible wiring 132 made of Ni alloy formed on a flexible substrate 131 made of polyimide through a photolithography process, and a bump electrode 133 mainly made of Ni for probe contact at the tip of the flexible wiring 132. It is formed by electrolytic plating. Although not shown, a resist protective material is coated on the flexible wiring 132. With respect to such a flexible wiring, with the buffer member 134 and the reinforcing plate 135, the end of the flexible wiring 132 opposite to the probe contact side and the connection portion on the wiring board 10 side are connected to each other in the electrical connection region 22. Install. The buffer member 134 and the reinforcing plate 135 appropriately bring each tip (bump electrode 133) of the probe group 13 into contact with each terminal electrode (DIN, DOUT) of the measured chip region CHIP together with the needle tip of the probe group 12. It is provided for. Here, the buffer member 134 is made of polyimide, the reinforcing plate 135 is made of a glass material, and necessary portions are fixed by an adhesive member (not shown). Thereby, each tip arrangement position or pressing force of the probe group 13 is adjusted.
[0025]
In the measured chip region CHIP as the liquid crystal driver IC, the signal transmission path on the input terminal electrode group DIN side includes a power supply system. The signal transmission path on the output terminal electrode group DOUT side mainly includes a signal system. Of the signal transmission paths of the wiring board 10, the signal system wiring and the output system wiring are preferably wiring (101) inside the wiring board 10. The power supply wiring is preferably the wiring (102) on the wiring board 10. Thereby, a probe card which is hardly affected by noise can be configured.
[0026]
According to the configuration and method of the first embodiment, the probe card operates as follows on the measured chip region CHIP. For the input terminal electrode group DIN having a relatively large arrangement pitch and including a power supply system, the probe group 12 having a needle type is suitable. The output terminal electrode group DOUT having a fine arrangement pitch and mainly having a signal system is preferably handled by the probe group 13 having a photolithography type. The signal system wiring and the output system wiring are preferably the wiring (101) inside the wiring board 10. Further, regarding the signal transmission path of the wiring board 10, the power supply system wiring is arranged on the wiring board 10, and the signal system wiring and the output system wiring are arranged inside the wiring board 10. As a result, it is possible to reduce the influence of noise and achieve stable measurement and probe test even when a terminal electrode having a narrow pitch is included.
[0027]
2 (a) and 2 (b) respectively show the configuration of the main part of the probe card according to the first embodiment of the present invention. (A) is an overview from the top, and (b) is an arbitrary view from the side. It is the schematic which shows the cross section.
In this embodiment, the reinforcing member of the probe group 13 is different from that of the first embodiment, and a metal material is used. The reinforcing plate 235 is, for example, a stainless steel plate having a predetermined thickness, and is fixed to the substrate 10 with screws or the like (not shown). The reinforcing plate 235 is bent by pressing and has a function similar to that of the buffer member 134. Since other configurations are the same as those of the first embodiment, the same reference numerals are given. In other words, the reinforcing plate 235 and the buffer member 134 are configured so that each tip (bump electrode 133) of the probe group 13 and each of the terminal electrodes (DIN, DOUT) of the measured chip region CHIP together with the needle tip of the probe group 12 are respectively appropriate. Provided for contact, the tip placement position or pressing force of the probe group 13 is adjusted.
[0028]
The reinforcing plate 235 is a stainless steel plate, but another metal material may be used. It is also conceivable to use a resin-based member as the reinforcing plate while maintaining the configuration in which the flexible substrate 131 is supported by the reinforcing plate 235.
FIG. 3 is a cross-sectional view showing the third embodiment and corresponding to FIG. While maintaining the configuration in which the flexible substrate 131 is supported by the reinforcing plate 235, a resin-based reinforcing plate 335 member is used as the reinforcing plate.
[0029]
According to the configuration of each of the second and third embodiments, the same effects as those of the first embodiment can be obtained. That is, the probe card operates as follows for the measured chip region CHIP. For the input terminal electrode group DIN having a relatively large arrangement pitch and including a power supply system, the probe group 12 having a needle type is suitable. The output terminal electrode group DOUT having a fine arrangement pitch and mainly having a signal system is preferably handled by the probe group 13 having a photolithography type. Further, regarding the signal transmission path of the wiring board 10 of the probe card, the power supply wiring is arranged on the wiring board 10 and the signal wiring and the output wiring are arranged inside the wiring board 10. As a result, it is possible to reduce the influence of noise and achieve stable measurement and probe test even when a terminal electrode having a narrow pitch is included.
[0030]
FIG. 4 is a block diagram showing a main part of a wafer prober according to the fourth embodiment of the present invention. In the prober 40, a movement control stage 41 on which the semiconductor wafer WF is placed, a probe card 42, and a circuit substrate 43 for signal relay are arranged. The prober 40 controls the set temperature of the movement control stage 41. By the movement control of the wafer WF by the movement control stage 41, the probe card 42 faces the measured chip region CHIP of the wafer WF. The probe card 42 uses the configuration of any of the first to third embodiments described above. That is, the probe group 12 having a needle type is brought into contact with the input terminal electrode group DIN in the measured chip region CHIP, and the probe group 13 having a lithography type is contacted with the output terminal electrode group DOUT in the measured chip region CHIP. Each is touched. Thereby, a test signal or a test pattern is input to each of the probe groups 12 and 13, and a resultant output signal is obtained.
[0031]
A signal (test signal or test pattern) sent to the prober 40 to the chip to be measured CHIP is transmitted from the tester 45 main body via the test head 44. The prober 40 and the test head 44 are electrically connected / released by an opening / closing mechanism (not shown). That is, the test head 44 comes into contact with and opens a signal transmission terminal (not shown) provided on the circuit substrate 43 above the prober 40.
[0032]
A signal result from the chip to be measured CHIP obtained by the prober 40 is transmitted to the tester 45 main body via the test head 44. The tester 45 determines whether the function of the chip to be measured CHIP is good or bad compared with the expected value. Also, measure and analyze analog values such as I / O signals, power supply voltage and current. Only IC chips selected as non-defective products by such a wafer probing test are sent to the assembly process.
[0033]
According to the structure of the said embodiment, a probe test is implemented using the wafer prober which employ | adopted the structure of one of the probe cards as shown in the said 1st Embodiment-3rd Embodiment. As a result, even with an IC chip including terminal electrodes with a fine arrangement pitch, it is possible to achieve stable measurement and probe test while reducing the influence of noise.
Further, in the method of manufacturing a semiconductor device, by including a step of performing a probe test using such a probe card or a wafer prober, the accuracy of the probe test is improved, and as a result, the semiconductor device is highly reliable.
[0034]
As described above, according to the present invention, the input terminal electrode group having a relatively large arrangement pitch and including a power supply system is compatible with the probe group having a needle type, the arrangement pitch is fine, and the signal system is For main output terminal electrode groups, it is useful to use a probe group having a photolithography type. Further, regarding the signal transmission path of the probe card wiring board, the power supply wiring is arranged on the wiring board, and the signal wiring and the output wiring are arranged inside the wiring board. As a result, it is possible to reduce the influence of noise and achieve stable measurement and probe test even when a terminal electrode having a narrow pitch is included. As a result, it is possible to provide a probe card, a manufacturing method thereof, a wafer prober, and a manufacturing method of a semiconductor device that achieve stable measurement and probe testing while reducing the influence of noise while corresponding to miniaturization of the terminal electrode to be measured. it can.
[Brief description of the drawings]
FIG. 1 is a diagram showing a main part configuration of a probe card according to a first embodiment.
FIGS. 2A and 2B are diagrams showing a main configuration of a probe card according to a second embodiment.
FIG. 3 is a diagram showing a main configuration of a probe card according to a third embodiment.
FIG. 4 is a configuration diagram showing a main part of a wafer prober according to a fourth embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Wiring board (probe card), 101, 102 ... Wiring, 11 ... Opening part, 12, 13 ... Probe group, 121 ... Resin unit, 131 ... Flexible board, 132 ... Flexible wiring, 133 ... Bump electrode, 134 ... Buffer member, 135, 235, 335 ... reinforcing plate, 21, 22 ... electrical connection region, WF ... semiconductor wafer, CHIP ... measured chip region, BMP ... bump electrode, DIN ... input terminal electrode group, DOUT ... output terminal electrode group.

Claims (9)

A probe card that bears signals to be faced to a measured chip area on a wafer,
A first probe group having a needle type to be brought into contact with each of the first terminal electrode groups in the measured chip region;
A second probe group having a lithography type that is brought into contact with a second terminal electrode group having an arrangement pitch smaller than that of the first terminal electrode group in the measured chip region;
A wiring board on which signal transmission paths of the first probe group and the second probe group are arranged;
A probe card comprising: The probe card according to claim 1, wherein the second probe group includes at least a buffer member and a reinforcing member between the second probe group and the wiring board. 2. The wiring board according to claim 1, wherein signal wiring and output wiring among the signal transmission paths include wiring inside the wiring board, and power supply wiring includes wiring on the wiring board. The probe card according to 1 or 2. A probe card that bears signals to be faced to a measured chip area on a wafer,
A first probe group having a needle type to be brought into contact with each of the first terminal electrode groups in the measured chip region;
A second probe group having wiring supported by a flexible substrate that is brought into contact with each of the second terminal electrode groups having an arrangement pitch smaller than that of the first terminal electrode group in the measured chip region;
A wiring board on which signal transmission paths of the first probe group and the second probe group are arranged;
A probe card comprising: 5. The second probe group includes a bump electrode disposed at a front end of the wiring, and includes at least a buffer member and a reinforcing member between the flexible substrate and the wiring substrate. Probe card. 2. The wiring board according to claim 1, wherein signal wiring and output wiring among the signal transmission paths include wiring inside the wiring board, and power supply wiring includes wiring on the wiring board. 4. The probe card according to 4 or 5. A step of arranging a first probe group having a needle type in contact with the first terminal electrode group in the measured chip region in a connection region on one side of the wiring board on which a predetermined signal transmission path is disposed; ,
In the connection region on the other side of the wiring substrate, a wiring supported by a flexible substrate is provided to contact the second terminal electrode group having a smaller arrangement pitch than the first terminal electrode group in the measured chip region. Providing a second probe group, and
A method of manufacturing a probe card, comprising: providing at least a buffer member and a reinforcing member between the flexible substrate and the wiring substrate in order to adjust an arrangement position or a pressing force of at least each tip of the second probe group. Established a semiconductor wafer installation area, a signal transmission mechanism responsible for sending and receiving signals related to electrical characteristic inspection in the semiconductor wafer, and a test system related to signal generation and analysis for use in the electrical characteristic inspection A wafer prober equipped with a tester body,
A first probe group having a needle type in which a probe card that is opposed to a measured chip region on the semiconductor wafer and is in charge of transmitting and receiving contacts with a first terminal electrode group in the measured chip region; A second probe group having a lithographic type to be brought into contact with each of the second terminal electrode groups having an arrangement pitch smaller than that of the first terminal electrode group in the measured chip region;
A wafer prober characterized by comprising: A method for manufacturing a semiconductor device, comprising a step of performing a probe test using the probe card according to claim 1,
The probe is brought into a conductive state by bringing the first probe group and the second probe group into contact with each other so as to correspond to the first terminal electrode group and the second terminal electrode group in the measured chip region, respectively. A method for manufacturing a semiconductor device, comprising a step of performing a test.

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