JP2004228556A - Pasting component, its manufacturing method, and manufacturing apparatus therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pasting component having a wax layer which is uniform, in which no bubble exists inside, and which is very thin in thickness, on a holding substrate, its manufacturing method, and manufacturing apparatus therefor. <P>SOLUTION: The pasting component formed by tempolarily adhering the holding substrate 3 to a work with a wax 4, is characterised in that the number of bubbles, which exist in the wax layer 4 and are larger than 0.5 mm in an outerdiameter, is less than 1,300 /m<SP>2</SP>. In the manufacturing process, first, the liquid wax 4 is oozed through a coating pad 7 by a pressure of a non-reactive gas, the holding substrate 3 is contacted with the coating pad 7, and the wax 4 is applied to one side of the holding substrate, then, the holding substrate 3 is tempolarily adhered to the work. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a bonding member formed by temporarily bonding a holding substrate to an object to be processed, a method for manufacturing the same, and an apparatus for manufacturing the same.
[0002]
[Prior art]
In the processing of high-purity single crystal semiconductor wafers such as silicon (hereinafter simply referred to as "semiconductor wafers"), semiconductor devices such as integrated circuits, sensors, and magnetic heads using the same, and the processing of glass substrates, Generally, processing such as grinding, polishing (polishing, lapping), dicing, and etching is performed in a state where a semiconductor wafer or a glass substrate, which is an object, is attached to a holding substrate. Hereinafter, an explanation will be given with an example.
[0003]
(I) Processing in the manufacture of semiconductor wafers
In the production of semiconductor wafers, usually, a single crystal ingot is sliced with an inner peripheral blade cutter, a wire saw or the like to form a wafer, then roughly polished using an alumina abrasive or the like, washed, and then washed with a colloidal silica liquid. It is manufactured by mechanochemical polishing using an alkali or the like and alkali washing. Here, when roughly polishing a thin wafer having a thickness of about 100 μm or less, problems such as generation of cracks at the time of polishing and uniformity of the film thickness due to waving or warpage may occur. Therefore, when polishing such a thin wafer, the wafer is polished in a state in which the wafer is temporarily adhered to a holding substrate with an adhesive tape or the like, and after polishing, the wafer is peeled off and washed with an alkali to produce a semiconductor wafer.
[0004]
(Ii) Processing in the manufacture of integrated circuits (IC chips, LSI chips, VLSI chips, ULSI chips, etc.)
For integrated circuits such as IC chips, a predetermined circuit pattern is formed using a photoresist on the surface of a semiconductor wafer on which an oxide film has been formed, and then the back surface of the semiconductor wafer is ground, finally diced, washed, and die-bonded. It is generally manufactured by making a chip. Here, at the time of the above-mentioned grinding, prevention of breakage of the semiconductor wafer and simplification of the grinding process are achieved by using a bonding member in which the wafer is temporarily bonded to the holding substrate via an adhesive sheet. In addition, dicing is performed while the semiconductor wafer is temporarily bonded to the holding substrate using a dicing tape or the like or the semiconductor wafer is directly fixed on the surface plate to prevent the occurrence of defects such as cracking of the semiconductor wafer. are doing.
[0005]
(Iii) Processing in the manufacture of sensors (vibrating gyroscopes, acceleration sensors, etc.)
In the manufacture of a sensor such as a vibrating gyroscope, it is necessary to process a semiconductor wafer into a complicated shape, and this processing is usually performed by through etching. For example, when the through etching is performed by the plasma process, the etching is usually performed in a state in which the back surface of the substrate is filled with a cooling gas in order to prevent the substrate from becoming hot. Therefore, when only the semiconductor wafer is subjected to the penetration etching, the cooling gas is released into the process chamber at the time of penetration.
[0006]
Therefore, conventionally, the release of the cooling gas is prevented by etching only the semiconductor wafer in a state where the holding substrate is temporarily bonded to the back surface of the semiconductor wafer with an adhesive or the like. In addition, a thin semiconductor wafer having a thickness of about 100 μm or less does not have strength enough to withstand processing such as through-etching, and causes defects such as cracks and distortions during the processing. For this reason, the semiconductor wafer is temporarily bonded to a holding substrate that is thicker and has sufficient strength.
[0007]
(Iv) Processing in manufacturing a magnetic head
In manufacturing a floating magnetic head (hereinafter, simply referred to as a "magnetic head") used for a magnetic disk or the like, first, an element such as an MR element is formed on a surface of a semiconductor wafer on which an oxide film is formed by sputtering or the like. Are formed, and a plurality of magnetic heads are formed in a row on a single wafer by forming an element protection film, predetermined gold terminals and the like. The wafer is cut into bars in each row of the magnetic head by dicing, the ABS (Air Bearing Surface), which is the slider surface of the magnetic head, is wrapped on the bar-shaped wafer, and further divided into individual magnetic heads by dicing. You.
[0008]
Here, in the manufacture of the magnetic head, as in the above-described example, dicing and lapping are performed with the wafer attached to the holding substrate using a dicing tape, an adhesive, or the like.
[0009]
(V) Dicing glass substrates
A glass substrate such as a counter substrate, a TFT liquid crystal substrate, and a dust-proof cover glass is used for the liquid crystal display device. These glass substrates are manufactured by dividing a large glass substrate master by dicing. As an optical filter used for an optical fiber, a filter chip obtained by dicing a filter member having a filter film formed on a surface of a glass substrate into a required size is used.
[0010]
In the dicing step in these manufacturing processes, from the viewpoint of preventing chipping and peeling of the formed film and the like, one surface of the glass substrate is formed on a glass holding substrate or a platen using a dicing tape or the like, similarly to the above-described example. In general, it is performed in a state of being attached.
[0011]
[Problems to be solved by the invention]
As described above, processing of processing objects such as thin semiconductor wafers and glass substrates is usually performed in a state where these processing objects are attached to a holding substrate (including a surface plate) with an adhesive tape, an adhesive, or the like. Has been done. However, when processing such as dicing is performed using an adhesive tape such as a dicing tape, static electricity is generated when the adhesive tape is peeled off, and a failure may occur in an IC chip or the like. Further, there has been a problem that an adhesive tape such as a dicing tape or the like cannot be reused, thereby increasing the manufacturing cost.
[0012]
On the other hand, when performing through-etching, conventionally, an adhesive has been applied to a holding substrate by screen printing, and a semiconductor wafer has been temporarily bonded thereto, but there are the following problems.
[0013]
4A and 4B are diagrams showing a conventional bonding method using screen printing, wherein FIG. 4A shows a method of applying a bonding agent to a holding substrate, and FIG. 4B shows a method of bonding a holding substrate and a semiconductor wafer. The process is shown, and (c) shows the state after pasting. As shown in FIG. 4A, a screen 14 on which a bonding agent 13 is placed is prepared on an upper portion where the holding substrate 3 is fixed, and a spatula 15 such as a rubber piece is moved on the screen 14 to remove the bonding agent 13. It is applied on the holding substrate 3. As shown in FIG. 4 (b), the object to be processed (semiconductor wafer) 2 is placed on the holding substrate 3 on which the bonding agent 13 has been applied, and this is heated and defoamed in a vacuum oven. The bonding member shown in (c) can be obtained.
[0014]
In screen printing, it is difficult to uniformly apply a low-viscosity bonding agent on a holding substrate, and since such a low-viscosity bonding agent is difficult to fix on the holding substrate, a high viscosity of 10 Pa · s or more is used. Must be used. On the other hand, with such a high-viscosity bonding agent, it is difficult to reduce the coating thickness (usually, the coating thickness is about 500 μm). Under such circumstances, for example, when screen printing using a bonding agent having low thermal conductivity is applied to the through etching as shown in (iii) above, it is possible to efficiently raise the temperature of the semiconductor wafer during etching. It cannot be prevented.
[0015]
For this reason, grease having high viscosity and good thermal conductivity (hereinafter, referred to as "thermally conductive grease") such as a mixture of aluminum nitride and a polymer has been used in screen printing in the etching step. However, in the application method by screen printing using a thermally conductive grease, the following problems occur. (1) Since the thermal conductive grease has a high viscosity, fine bubbles are easily generated in the thermal conductive grease after application.
(2) Since the thermal conductive grease has a high viscosity and it is difficult to control the thickness, unevenness in the applied thickness tends to occur.
(3) The semiconductor wafer to be processed is heated and separated from the holding substrate after passing through the processing step. At this time, the aluminum nitride in the thermally conductive grease does not melt and remains on the back surface of the semiconductor wafer, which causes contamination.
(4) Although thermally conductive grease is commercially available, it is a very expensive material, which causes an increase in manufacturing cost.
[0016]
In particular, when the above-mentioned problem (1) or (2) occurs when performing the trench etching on the bonded member manufactured by the conventional method, the cooling during the etching becomes uneven and the etching shape becomes unstable. Usually, a semiconductor wafer to be processed is attached to a member such as glass after being processed into a predetermined shape by etching. However, if the problem (3) occurs, the semiconductor wafer and the glass or the like are attached. Adhesion with the member becomes worse.
[0017]
The present invention has been made in order to solve the above-described problem, and uses wax, which is an inexpensive bonding agent, does not cause bubbles and unevenness in the thickness of the coating, and also causes contamination on the back surface of the semiconductor wafer after peeling. It is an object of the present invention to provide a bonding member that does not cause any problem, a method of manufacturing the same, and a manufacturing apparatus.
[0018]
[Means for Solving the Problems]
The present inventor has made the following studies to improve the above problem, and as a result, has obtained the following knowledge.
(A) By lowering the viscosity of the bonding agent, it is possible to prevent bubbles and uneven coating thickness and to reduce the coating thickness.
(B) Since the thermal conductivity of the bonding agent is no longer required by reducing the thickness of the coating, the bonding agent does not contain a substance such as aluminum nitride which causes stain on the back surface of the object to be processed (semiconductor wafer). Can be selected.
(C) However, it is difficult to lower the viscosity of the bonding agent by screen printing.
[0019]
The present inventor has completed the present invention based on such knowledge by developing a new bonding agent used for manufacturing a bonded member and a new coating device that does not use screen printing. The gist of the present invention is a bonding member shown in the following (1), a method for manufacturing a bonding member shown in the following (2), and an apparatus for manufacturing a bonding member shown in the following (3).
[0020]
{Circle around (1)} A bonding member formed by temporarily bonding a holding substrate to a processing object with wax, wherein the number of bubbles having an outer diameter of 0.5 mm or more existing in the wax layer is 1,300 / m. ² A bonding member characterized by the following.
[0021]
{Circle around (2)} The liquid wax is leached from the application pad by the pressure of the non-reactive gas, and the holding substrate is brought into contact with the application pad to apply the wax on one side of the holding substrate, and then the temporary holding of the holding substrate to the object to be processed is performed. A method for manufacturing a bonded member, comprising: In particular, it is desirable to temporarily adhere the holding substrate to the object to be processed after spreading the wax by rotating the holding substrate coated with the wax on one side. The non-reactive gas is desirably nitrogen gas or dry air.
[0022]
{Circle around (3)} An apparatus for manufacturing a bonding member in which a holding substrate is temporarily bonded to an object to be processed, wherein a means for applying wax to the holding substrate includes a sealed container holding liquid wax, and a liquid container holding liquid wax. A coating pad for applying to the substrate, and a tube for sending the liquid wax to the coating pad, in a state in which the liquid wax is leached out of the coating pad by introducing a non-reactive gas into the gap of the closed container, An apparatus for manufacturing a bonding member, comprising a mechanism for bringing one side of a holding substrate into contact with the application pad. In particular, it is desirable to have rotating means for rotating the holding substrate in contact with the application pad while supporting one surface of the holding substrate. The non-reactive gas is desirably nitrogen gas or dry air.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. The wax used in the present invention may be a solid wax at room temperature or a liquid wax at room temperature. In the following description, a case where a wax solid at room temperature is mainly used will be described.
[0024]
1. About the bonded member of the present invention
FIG. 1 is a sectional view showing a bonding member of the present invention. As shown in FIG. 1, a bonding member 1 of the present invention is a bonding member obtained by temporarily bonding a holding substrate 3 to a processing object 2 with a wax 4, and has an outer diameter of 0.5 mm existing in a wax layer. 1,300 bubbles / m ² It is characterized by the following. This is for the following reason.
[0025]
When penetration bonding is performed on the bonding member, the burning of the photoresist may occur during the etching depending on the manufacturing conditions. Therefore, the present inventor prepared an object to be processed made of silicon and a holding substrate made of glass, and produced silicon-glass bonded members under various conditions. Then, when these bonded members were subjected to penetration etching, the same image sticking of the photoresist as described above occurred in some of the bonded members. When the bonded member in which the photoresist was burned was examined in detail from the holding substrate (glass) side, a plurality of bubbles having an outer diameter of 0.5 mm or more existed in the area where the burn occurred. No resist burning starting from bubbles of less than 5 mm was observed. As a result of repeated studies by the present inventors, problems have also arisen in grinding and polishing of silicon wafers and dicing of silicon wafers or glass substrates when there are a plurality of bubbles having an outer diameter of 0.5 mm or more as described above. I found out.
[0026]
Therefore, the present inventors focused on bubbles having an outer diameter of 0.5 mm or more among the bubbles present in the wax layer, and investigated the allowable range of the number of bubbles having an outer diameter of 0.5 mm or more. The number of bubbles having an outer diameter of 0.5 mm or more is 1,300 / m ² It has been found that various problems occur when the ratio exceeds.
[0027]
That is, the number of bubbles having an outer diameter of 0.5 mm or more existing in the wax layer is 1,300 / m. ² When grinding or polishing (polishing, lapping) is performed on a bonded member exceeding the above, cracks and irregularities are generated in the processing target 2. This becomes remarkable especially when a thin processing object of about 100 μm or less is manufactured. Further, when dicing is performed on such a bonding member, chipping occurs on a semiconductor wafer or a glass substrate in a portion where bubbles exist. Further, when such a bonding member is subjected to through-etching, the cooling efficiency from the electrode at the time of etching deteriorates, and the photoresist pattern may burn during the etching.
[0028]
Here, the thickness of the wax layer in the bonding member of the present invention may be set according to the processing to be performed. For example, the thickness of the wax layer of the bonding member to be subjected to through etching is preferably 9 to 25 μm. This is because if the thickness of the wax layer is less than 9 μm, the semiconductor wafer may peel off from the supporting substrate during etching, and if it exceeds 25 μm, the wax may ooze out from the bonded side surface during etching. A more desirable thickness of the wax layer of the bonding member used for the through-etching is 10 to 13 μm.
[0029]
In addition, the size and the number of the above-mentioned bubbles can be measured by visual observation using an optical microscope photograph using at least one substrate constituting the bonding member as a transparent glass. Specifically, a circle having an outer diameter of 50 mm is drawn at an arbitrary position in the above-mentioned micrograph, one bubble having an outer diameter of 0.5 mm or more is present in the frame, and an outer diameter of 0. The number of air bubbles having a size of 5 mm or more is counted as 1/2, and this is performed on a micrograph of 10 or more visual fields, and this is converted into the number per square meter to obtain the average value.
[0030]
Further, when both substrates are silicon wafers, visual observation is not possible, but at least one substrate constituting the bonding member is made of transparent glass, and the outer diameter of bubbles existing in the wax layer by the above method. And the number of bubbles are specified, and the number of bubbles having an outer diameter of 0.5 mm or more is 1,300 / m ² After adjusting the manufacturing conditions as described below, a bonded member in which both substrates are silicon wafers may be manufactured. For example, according to the method described below, it is possible to easily manufacture a bonded member that satisfies the conditions of the outer diameter and the number of bubbles.
[0031]
The holding substrate is desirably made of the same material as the object to be processed. Further, the holding substrate in the case of performing dicing may be a surface plate for dicing.
[0032]
As the wax, for example, a wax mainly containing hard pine butter, beeswax, or mineral wax can be used. Further, rosin and higher fatty acids may be contained. Since such a wax does not contain a substance such as aluminum nitride which causes stain on the back surface of the semiconductor wafer, no stain is generated on the back surface of the semiconductor wafer after being separated from the holding substrate.
[0033]
2. About the manufacturing method and the manufacturing apparatus of the bonded member of the present invention
FIG. 2 is a diagram illustrating an example of a device for manufacturing a bonded member according to the present invention. As shown in FIG. 2, the bonding member manufacturing apparatus 5 of the present invention includes a closed container 6 for holding the liquid wax 4, an application pad 7 for applying the liquid wax 4 to the holding substrate 3, and a liquid wax. And a tube 8 for feeding the coating 4 to the application pad 7. The holding substrate 3 is heated by a hot plate (not shown) to a temperature at which the wax 4 can be maintained at an appropriate viscosity, and is supported by the support member 10 while maintaining this temperature by the heater 9-1. When a wax that is liquid at room temperature is used, it is not necessary to use a hot plate or a heater 9-1 if the viscosity is appropriate. If it is necessary to adjust the viscosity, a hot plate or a heater 9-1 is used. Then, the holding substrate may be heated and held.
[0034]
A heater 9-2 is installed around the closed container 6, whereby the wax 4 is held in the closed container 6 in a liquefied state. Note that, similarly to the above, even when a wax that is liquid at room temperature is used, it is not necessary to use the heater 9-2 if the viscosity is appropriate, and use the heater 9-2 if the viscosity needs to be adjusted. Heating the wax.
[0035]
Since the non-reactive gas is introduced into the gap of the closed container 6, the liquid wax 4 is oozed out of the application pad 7 through the tube 8 by the pressure. In this state, the holding substrate 3 is lowered by the support member 10 and brought into contact with the application pad 7, so that the holding substrate 3 is coated with the wax 4. As described above, if the wax 4 is applied to the holding substrate 3 in a state where the wax 4 is leached from the application pad 7 by the pressure of the non-reactive gas, almost no bubbles are generated in the applied wax 4. 1,300 bubbles / m ² It can be:
[0036]
This is because, according to the pressure of the non-reactive gas, the pressure in the closed vessel 6, the inside of the tube 8, and the inside of the coating pad 7 can be weakened, so that the flow rate of the wax 4 in the tube 8 can be reduced. This is because self-foaming of the wax 4 can be prevented. The heating conditions of the heaters 9-1 and 9-2 are set so that the viscosity of the liquid wax is 0.1 to 1.0 Pa · s. It is desirable to introduce the non-reactive gas at a pressure of 35.0 kPa.
[0037]
The non-reactive gas means, for example, an inert gas such as helium gas or argon gas, or a gas species that does not affect the properties of the wax, such as nitrogen gas, oxygen gas, carbon dioxide gas, and dry air. However, it is preferable to use nitrogen gas or dry air because it is inexpensive and easily available. Note that dry air means air having a humidity of 10% or less. This is because, as described above, the wax may be heated for the purpose of viscosity adjustment or the like. When air having a humidity of more than 10% is introduced into a sealed container filled with the wax thus heated, the moisture is reduced. This is because they evaporate and mix into the wax to cause foaming. A more desirable humidity is 5% or less.
[0038]
Here, if the viscosity of the wax exceeds 1.0 Pa · s, the fluidity becomes insufficient, and the pressure of the non-reactive gas required to exude the wax from the application pad increases. In addition, wax coating unevenness is likely to occur. On the other hand, when the viscosity of the wax is less than 0.1 Pa · s, it is difficult to maintain the state of the wax exuding from the application pad, such as the wax flowing down from the application pad. Therefore, in order to ensure proper fluidity of the wax, the viscosity may be set in the range of 0.1 to 1.0 Pa · s. In particular, it is desirable to limit the range to 0.5 to 1.0 Pa · s.
[0039]
The viscosity of the wax can be adjusted by changing the heating temperature by a heater, and the measurement may be performed in a closed container. Further, a liquid wax having a viscosity at room temperature within this range may be used.
[0040]
The non-reactive gas is introduced into the gap portion of the closed container 6 while maintaining the viscosity of the wax in the above range. However, when the pressure of the non-reactive gas to be introduced is less than 23.0 kPa, the non-reactive gas is applied. Insufficient amount of wax is exuded from the pad, or it takes a long time to exude the wax. On the other hand, when the pressure of the non-reactive gas exceeds 35.0 kPa, the amount of the wax exuding from the application pad becomes excessive and may flow down from the application pad. In addition, the flow rate of the wax flowing in the tube becomes too high, and the wax may self-foam. Therefore, in order to prevent bubbles from being generated and to allow an appropriate amount of wax to ooze out of the coating pad, the pressure of the non-reactive gas may be limited to the range of 23.0 to 35.0 kPa, and in particular, 28.0. It is desirable to limit the range to 31.0 kPa.
[0041]
As means for oozing the liquid wax 4 from the application pad 7, for example, a piston is provided on the upstream side of the application pad 7, and the wax 4 is mechanically oozed from the application pad 7 by moving the piston. However, when the following experiment was conducted, many bubbles were generated in the wax 4 applied to the holding substrate 3 by this means.
[0042]
Specifically, an experiment comparing the method of the present invention with the method using a piston using a wax mainly composed of hard pine resin (on Katamatsuya), beeswax, and mineral wax (10 coating experiments for each method) ). As a result, the number of bubbles having an outer diameter of 0.5 mm or more generated in the wax was 512 / m on average in the method of the present invention. ² (Maximum 1274 pieces / m ² ), But 28,790 particles / m on average by the leaching method using a piston. ² Met. In addition, the size and average number of bubbles were calculated by the above method.
[0043]
When the pasting member manufactured by using the leaching method using the piston was subjected to penetration etching, the same problem as in the case where the above-described heat conductive grease was used occurred. For this reason, the present inventors do not make the liquid wax exude from the application pad by a mechanical means such as a piston, but exude the liquid wax from the application pad by the pressure of the non-reactive gas as described above, In this state, means for bringing one side of the holding substrate into contact with the application pad was employed.
[0044]
In order to obtain a wax layer thickness of 9 to 25 μm as described above, for example, it is desirable to have a rotating means for rotating the holding substrate in contact with the application pad while supporting one surface of the holding substrate. In particular, it is most preferable that the lower surface of the holding substrate is brought into contact with the application pad and rotated while the upper surface of the holding substrate is supported.
[0045]
3A and 3B are diagrams illustrating an example of an operation state of the rotating unit. FIG. 3A illustrates a rotating state of the rotating unit, and FIG. 3B illustrates a state in which the wax scatters. Although not shown, each unit such as the closed vessel 6, the tube 8, the heaters 9-1 and 9-2, and the introduction of the non-reactive gas are the same as those shown in FIG.
[0046]
As shown in FIGS. 3A and 3B, in the apparatus for manufacturing a bonding member according to the present invention, after the wax 4 is applied to the lower surface of the holding substrate 3 whose upper surface is supported by the rotating device 12, 12 is raised to a predetermined position. At this position, the rotating means 12 rotates, and the wax 4 applied to the lower surface of the holding substrate 3 is spread outward from the center of rotation by centrifugal force.
[0047]
As shown in FIG. 3B, the extra applied wax is scattered by centrifugal force, so that a uniform and thin wax film is formed on the surface of the holding substrate 3 without unevenness of the applied thickness. At this time, the scattered wax adheres to the inner wall of the booth 11 maintained at a temperature equal to or higher than the melting point of the wax, and is collected. Since the recovered wax is reused after removing foreign substances, the production cost can be significantly reduced as compared with an adhesive tape such as a dicing tape which is assumed to be disposable.
[0048]
The lower surface of the holding substrate 3 may be supported by the rotating means 12 and the wax 4 may be applied to the upper surface of the holding substrate 3. However, in this state, the holding substrate 3 is rotated and the wax 4 is applied by the centrifugal force. When spread, the extra wax 4 may go around the lower surface of the holding substrate 3. For this reason, cleaning means such as spraying a rinsing liquid on the lower surface of the holding substrate is required. On the other hand, if the above-described means for rotating the holding substrate 3 after the lower surface of the holding substrate 3 is brought into contact with the application pad 7 while the upper surface of the holding substrate 3 is supported by the rotating means 12 is employed, the wraparound of the wax can be prevented. It is more desirable because it does not occur.
[0049]
In the manufacturing method of the bonding member according to the present invention, after applying the wax 4 to the holding substrate 3, the processing target 2 is temporarily bonded to the holding substrate 3 to manufacture the bonding member 1 as shown in FIG. 1. You. For example, after the wax 4 is applied to the holding substrate 3 by the above method, the workpiece 2 is placed in a state where the wax 4 is melted, and this is heated and defoamed in a vacuum oven to attach the bonding member 1. It may be manufactured. After the wax 4 is applied to the holding substrate 3 by the above method, the holding substrate 3 is once cooled and the workpiece 2 is placed in a state where the wax 4 is solidified, and the workpiece 2 is heated in a vacuum oven. The bonded member 1 may be manufactured by defoaming.
[0050]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, it can apply | coat wax which has a very thin layer thickness which has no bubble | bubble inside the holding substrate uniformly. For this reason, even if the bonded member in which the object to be processed such as a semiconductor wafer or a glass substrate is temporarily bonded to the holding substrate is subjected to grinding, polishing, and dicing, poor thickness uniformity and chipping do not occur. Further, when a bonding member obtained by temporarily bonding the semiconductor wafer to the holding substrate is subjected to trench etching, cooling during the etching becomes uniform, and the etching shape can be stabilized. Further, the wax used in the present invention is less expensive than conventionally used adhesive tapes such as a dicing tape and the like and thermally conductive grease, so that the production cost can be reduced.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a bonding member of the present invention.
FIG. 2 is a diagram illustrating an example of a manufacturing apparatus of a bonded member according to the present invention.
3A and 3B are diagrams illustrating an example of an operation state of a rotating unit, in which FIG. 3A illustrates a rotating state of the rotating unit, and FIG. 3B illustrates a state in which wax scatters.
4A and 4B are diagrams showing a conventional bonding method using screen printing, wherein FIG. 4A shows a method of applying a bonding agent to a holding substrate, and FIG. 4B shows a bonding method of the holding substrate and the semiconductor wafer. The process is shown, and (c) shows the state after these are pasted.
[Explanation of symbols]
1. 1. bonding member; Processing object, 3. 3. holding substrate; Wax, 5; 5. An apparatus for manufacturing a bonded member according to the present invention; Closed container, 7. Application pad, 8. Tubes, 9-1, 9-2. Heater, 10. 10. support member; Rotating means, 12. Booth, 13. Bonding agent, 14. Screen, 15. Spatula

Claims (7)

A bonding member formed by temporarily bonding a holding substrate to a workpiece with wax, wherein the number of bubbles having an outer diameter of 0.5 mm or more present in the wax layer is 1,300 / m ² or less. Bonding member. Liquid wax is leached from the application pad by the pressure of the non-reactive gas, the holding substrate is brought into contact with the application pad, and the wax is applied to one side of the holding substrate, and then the holding substrate is temporarily bonded to the workpiece. Manufacturing method of the bonding member. 3. The method according to claim 2, wherein the wax is applied to one side of the holding substrate, the wax is spread by rotating the holding substrate, and then the holding substrate is temporarily bonded to the workpiece. Method. The method according to claim 2 or 3, wherein the non-reactive gas is nitrogen gas or dry air. An apparatus for manufacturing a bonding member in which a holding substrate is temporarily bonded to a processing object, wherein a means for applying wax to the holding substrate includes a closed container holding liquid wax, and applying a liquid wax to the holding substrate. And a tube for sending liquid wax to the coating pad, and the liquid wax is leached from the coating pad by introducing a non-reactive gas into the cavity of the closed container. And a mechanism for contacting one surface of the holding substrate with the holding member. The apparatus for manufacturing a bonding member according to claim 5, further comprising rotating means for rotating the holding substrate in contact with the application pad while supporting one surface of the holding substrate. The apparatus according to claim 5, wherein the non-reactive gas is nitrogen gas or dry air.

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