JP2004292591A - Resin composition for optical semiconductor and optical semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a resin composition for optical semiconductors, homogeneously dispersed with an inorganic compound of high specific gravity without sedimentation, curable in such a homogeneously dispersed state of the inorganic compound even in its sealing step, thus capable of producing optical semiconductor devices with stable optical properties. <P>SOLUTION: The resin composition for optical semiconductors comprises the inorganic compound and a silane compound of formula(1). <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００１２】
また請求項２の発明は、請求項１において、エポキシ樹脂、硬化剤、硬化促進剤を配合したものに、あらかじめ無機化合物を一般式（１）で示されるシラン化合物で処理したものを添加して成ることを特徴とするものである。
【００１３】
また請求項３の発明は、請求項１又は２において、無機化合物の比重が２．０〜９．０であることを特徴とするものである。
【００１４】
また請求項４の発明は、請求項１乃至３のいずれかにおいて、無機化合物の含有量が組成物全量に対して０．５〜２０．０質量％であることを特徴とするものである。
【００１５】
また請求項５の発明は、請求項１乃至４のいずれかにおいて、一般式（１）で示されるシラン化合物の含有量が組成物全量に対して０．０５〜２．０質量％であることを特徴とするものである。
【００１６】
また請求項６の発明は、請求項１乃至５のいずれかにおいて、無機化合物として、金属酸化物、金属窒化物、金属炭化物、金属硼化物、金属単体、蛍光剤から選ばれるものを用いて成ることを特徴とするものである。
【００１７】
また請求項７に係る光半導体装置は、請求項１乃至６のいずれかに記載の光半導体用樹脂組成物で光半導体素子を封止して成ることを特徴とするものである。
【００１８】
【発明の実施の形態】
以下、本発明の実施の形態を説明する。
【００１９】
本発明に係る光半導体用樹脂組成物は、樹脂成分のほか、無機化合物及び上記一般式（１）で示されるシラン化合物を含有するものである。
【００２０】
樹脂成分としては、光透過性を確保できる比較的着色の少ないものであれば特に制限されるものではないが、例えば、シリコーン樹脂等の無溶剤タイプ又は溶剤タイプの液状樹脂（熱硬化性樹脂）、ポリカーボネート樹脂等の溶剤タイプの液状樹脂（熱可塑性樹脂）、エポキシ樹脂（熱硬化性樹脂）等を用いることができる。
【００２１】
エポキシ樹脂としては、１分子中に２個以上のエポキシ基を持っていれば特に制限されるものではないが、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、オルトクレゾールノボラック型エポキシ樹脂、脂環式エポキシ樹脂、トリグリシジルイソシアヌレート、脂肪族系エポキシ樹脂、芳香族系エポキシ樹脂の芳香環を水素添加したエポキシ樹脂等を用いることができる。これらのエポキシ樹脂のうち１種のみ用いても２種以上を混合して用いても差し支えない。
【００２２】
樹脂成分としてエポキシ樹脂を用いる場合には、硬化剤を用いることができる。この硬化剤としては、エポキシ樹脂と反応するものであれば特に制限されるものではないが、比較的着色の少ないものを用いるのが好ましい。例えば、無水ヘキサヒドロフタル酸、無水テトラヒドロフタル酸等の酸無水物、フェノール、クレゾール、キシレノール、レゾールシン等とホルムアルデヒドとを縮合反応して得られるノボラック型フェノール樹脂、液状ポリメルカプタンやポリサルファイド樹脂等のポリメルカプタン系硬化剤等を用いることができる。これらの硬化剤の他にアミン系硬化剤も用いることができるが、硬化時の変色が大きいため、使用する際にはその添加量等に注意する必要がある。上記の硬化剤のうち１種のみ用いても２種以上を混合して用いても差し支えない。エポキシ樹脂と硬化剤との当量比は、色目や硬化物の物性の点から、０．８〜２であることが好ましい。
【００２３】
エポキシ樹脂及び硬化剤を用いる場合には、硬化促進剤を用いることができる。この硬化促進剤としては、エポキシ樹脂と硬化剤との反応を促進させる作用があるものであれば特に制限されるものではないが、比較的着色の少ないものを用いるのが好ましい。例えば、トリフェニルフォスフィン、ジフェニルフォスフィン等の有機フォスフィン系硬化促進剤、１，８−ジアザビシクロ（５，４，０）ウンデセン−７、トリエタノールアミン、ベンジルジメチルアミン等の三級アミン系硬化促進剤、テトラフェニルホスホニウム・テトラフェニルボレート、テトラフェニルホスホニウム・ブロマイド等の有機塩類、１−ベンジル−２−フェニルイミダゾール等のイミダゾール類等を用いることができる。これらの硬化促進剤のうち１種のみ用いても２種以上を混合して用いても差し支えない。硬化促進剤の含有量は光半導体用樹脂組成物全量に対して０．０５〜５質量％であることが好ましい。硬化促進剤の含有量が０．０５質量％より少ないと、エポキシ樹脂と硬化剤との反応を十分に促進させることができず、成形サイクルが悪化するおそれがある。逆に硬化促進剤の含有量が５質量％より多いと、ゲル化時間が短くなって成形性が悪化し、ボイドや未充填等が発生するおそれがある。
【００２４】
無機化合物としては、特に制限されるものではないが、例えば、シリカ（比重：２．０〜２．６）、アルミナ（比重：３．５）、酸化チタン（比重：４．３）、チタン酸バリウム（比重：５．５）、酸化マグネシウム（比重：３．３）、酸化ベリリウム（比重：３．０）等に代表される金属酸化物、窒化アルミニウム（比重：３．３）、窒化硼素（比重：３．５）等に代表される金属窒化物、炭化珪素（比重：３．１）等に代表される金属炭化物、硼化チタン（比重：４．２）に代表される金属硼化物、銅粉（比重：８．９）等に代表される金属単体、ＺｎＳ：Ｃｕ系（比重：４．１）、Ｙ_３Ａｌ_５Ｏ_１２等のＹＡＧ系（比重：４．５〜５．５）、Ｅｕ系（比重：３．０〜４．０）等に代表される蛍光剤を用いることができる。
【００２５】
上記以外の無機化合物を用いることもできるが、特に無機化合物としては、上記のような金属酸化物、金属窒化物、金属炭化物、金属硼化物、金属単体、蛍光剤から選ばれるものを用いるのが好ましい。このような無機化合物であると、一般式（１）で示されるシラン化合物による処理を容易に行うことができるものである。
【００２６】
無機化合物の比重は９．０以下であることが好ましい。無機化合物の比重が９．０より大きいと、一般式（１）で示されるシラン化合物で処理しても沈降しやすくなり、光半導体用樹脂組成物内において均一に分散させることができなくなるおそれがある。無機化合物の比重は小さいほど好ましいが、実質上の下限は２．０である。
【００２７】
無機化合物の含有量は光半導体用樹脂組成物全量に対して０．５〜２０．０質量％であることが好ましい。無機化合物の含有量が０．５質量％より少ないと、無機化合物が光拡散剤又は蛍光剤として十分に機能しないおそれがある。逆に無機化合物の含有量が２０．０質量％より多いと、光半導体用樹脂組成物の光透過性を確保できないおそれがある。
【００２８】
一般式（１）で示されるシラン化合物としては、特に制限されるものではないが、例えば、ｎ−ヘキシルトリメトキシシラン、ｎ−ヘキシルトリエトキシシラン、ｎ−オクチルトリエトキシシラン、ｎ−デシルトリメトキシシラン等を用いることができる。
【００２９】
光半導体用樹脂組成物の硬化時においては、一般式（１）で示されるシラン化合物の珪素（Ｓｉ）に結合している４つの官能基（Ｒ１〜Ｒ４）のうち、３つの官能基（Ｒ１〜Ｒ３）が無機化合物と化学結合を形成し、残り１つの官能基（Ｒ４）が樹脂成分と化学結合を形成することによって、密着性を長期にわたって得ることができるが、光半導体用樹脂組成物の未硬化時においては、上記の官能基Ｒ４は樹脂成分に対して親和性を有するものの、樹脂成分との間にはまだ化学結合は形成されていない。そのため、上記シラン化合物と化学結合を形成した無機化合物は、未硬化時の光半導体用樹脂組成物内において自由に移動することができるのであるが、一旦、このような光半導体用樹脂組成物を撹拌した後は、上記の官能基Ｒ４が長鎖であるため、この官能基Ｒ４によって無機化合物が重力に抗して樹脂成分の多くと引き合うことができ、上記の無機化合物は容易に沈降することなく、光半導体用樹脂組成物内において均一に分散された状態を長く維持することができるものである。このように、上記シラン化合物を用いることによって、無機化合物の含有量が少ない光半導体用樹脂組成物内において、比重の大きい無機化合物を沈降させることなく均一に分散させることができるものである。
【００３０】
一般式（１）で示されるシラン化合物の含有量は光半導体用樹脂組成物全量に対して０．０５〜２．０質量％であることが好ましい。上記シラン化合物の含有量が０．０５質量％より少ないと、無機化合物の沈降を十分に防止することができないおそれがある。逆に上記シラン化合物の含有量が２．０質量％より多いと、物性の低下や増粘が起こるおそれがある。なお、無機化合物に対する上記シラン化合物の処理は部分的なものでもよく、また、上記シラン化合物で処理された無機化合物と上記シラン化合物で処理されていない無機化合物とを併せて使用してもよい。
【００３１】
光半導体用樹脂組成物には、樹脂成分、無機化合物及び一般式（１）で示されるシラン化合物のほか、変色防止剤、劣化防止剤、染料、紫外線吸収剤、シラン系カップリング剤、変性剤、可塑剤、光拡散剤、希釈剤等の添加剤を配合しても差し支えない。
【００３２】
そして、樹脂成分、無機化合物及び一般式（１）で示されるシラン化合物、必要に応じてその他の添加剤を配合することによって、光半導体用樹脂組成物を調製することができる。
【００３３】
具体的には、例えば、シリコーン樹脂等の無溶剤タイプ若しくは溶剤タイプの液状樹脂又はポリカーボネート樹脂等の溶剤タイプの液状樹脂を樹脂成分として用いる場合には、この樹脂成分の他に無機化合物及び一般式（１）で示されるシラン化合物、必要に応じてその他の添加剤をディスパー等で溶解混合することによって、シリコーン樹脂組成物又はポリカーボネート樹脂組成物として光半導体用樹脂組成物を調製することができる。
【００３４】
一方、エポキシ樹脂を樹脂成分として用いる場合には、この樹脂成分の他に硬化剤、硬化促進剤、無機化合物及び一般式（１）で示されるシラン化合物、必要に応じてその他の添加剤をディスパー等で溶解混合又はミキサーやブレンダー等で均一に混合した後に３本ロール等で溶融混練することによって、液状のエポキシ樹脂組成物として光半導体用樹脂組成物を調製することができる。また、上記のように溶解混合又は溶融混練して得られたものを冷却・固化した後に粉砕し、必要であればタブレット状に打錠することによって、固形状のエポキシ樹脂組成物として光半導体用樹脂組成物を調製することができる。
【００３５】
ここで、エポキシ樹脂を樹脂成分として用いる場合には、上記のように全成分を同時に配合するよりも、エポキシ樹脂、硬化剤、硬化促進剤、その他の添加剤を配合したものに、あらかじめ無機化合物を一般式（１）で示されるシラン化合物で処理したものを添加するようにするのが好ましい。エポキシ樹脂組成物の全成分を同時に配合してしまうと、上記シラン化合物の３つの官能基（Ｒ１〜Ｒ３）が無機化合物以外の成分とも化学結合を形成し、上記シラン化合物が無駄に消費されることによって、エポキシ樹脂組成物内において無機化合物の沈降を十分に防止することができなくなるおそれがある。また、無機化合物の含有量はもともと少ないので、上記シラン化合物が無機化合物に遭遇して化学結合を形成するよりも前に、無機化合物が沈降してしまうおそれもある。しかし、あらかじめ無機化合物を上記シラン化合物で処理しておくことによって、上記シラン化合物が無駄に消費されるのを防止することができると共に、確実に上記シラン化合物と無機化合物との間に化学結合を形成しておくことができ、エポキシ樹脂組成物内において無機化合物の沈降を十分に防止し、さらに均一に無機化合物を分散させることができるものである。
【００３６】
次に、上記のようにして得た光半導体用樹脂組成物を用いて封止成形することによって、光半導体装置を製造することができる。
【００３７】
すなわち、光半導体用樹脂組成物が固形状（例えば、タブレット）である場合には、ＬＥＤ等の光半導体素子を搭載したリードフレームをトランスファー成形用金型にセットした後、上記光半導体用樹脂組成物のタブレットを用いてトランスファー成形を行うことによって、光半導体素子を光半導体用樹脂組成物による封止樹脂で封止した光半導体装置を製造することができるものである。
【００３８】
また、光半導体用樹脂組成物が液状である場合には、キャスティング、ポッティング、印刷等の方法を使用すればよい。例えば、ＬＥＤ等の光半導体素子を搭載したリードフレームを型枠にセットした後、この型枠内に光半導体用樹脂組成物を流し込み、これを硬化させることによって、光半導体素子を光半導体用樹脂組成物による封止樹脂で封止した光半導体装置を製造することができるものである。
【００３９】
どのような成形を行うにしても、封止工程においては光半導体用樹脂組成物は液状となるが、このとき一般式（１）で示されるシラン化合物によって、無機化合物の沈降を防止することができるものであり、また、上記シラン化合物によって、無機化合物を均一に分散させた状態で光半導体用樹脂組成物を硬化させることができると共に、長期にわたって密着性を高く得ることができるものである。
【００４０】
このようにして得た光半導体装置にあって、光半導体素子を封止している封止樹脂には無機化合物が均一に分散されているので、良好な光学特性を長期間、安定して得ることができるものである。例えば、光半導体素子として発光素子を用いて光半導体装置を製造すると、この光半導体装置は、発光輝度のコントラストが鮮明なものとなり、また高輝度に安定して発光可能なものとなるのである。
【００４１】
【実施例】
以下、本発明を実施例によって具体的に説明する。
【００４２】
樹脂成分として、シリコーン樹脂である信越化学工業（株）製「ＫＥ−１０３」、ポリカーボネート樹脂である日本精化（株）製「ＮＳＣ−１０００」、エポキシ樹脂である大日本インキ化学工業（株）製「ＥＸＡ７０１５」、ダイセル化学工業（株）製「ＥＨＰＥ３１５０」、日産化学工業（株）製「ｔｒｉｓ（２，３−ｅｐｏｘｙ ｐｒｏｐｙｌ）ｉｓｏｃｙａｎｕｒａｔｅ」を用いた。
【００４３】
硬化剤として、新日本理化（株）製「ＨＨＰＡ」を用いた。
【００４４】
硬化促進剤として、北興化学工業（株）製「テトラ−ｎ−ブチルホスホニウムブロマイド」を用いた。
【００４５】
無機化合物として、シリカであるアドマファイン製「ＳＯ２５Ｒ」（比重：２．０〜２．６）、酸化マグネシウムである協和化学（株）製「ミクロマグ」（比重：３．３）、窒化アルミニウムである（株）タキオン製「ＡＩＮ」（比重：３．３）、日榮薬品工業（株）製の銅粉（比重：８．９）、蛍光剤であるＺｎＳ：Ｃｕ（比重：４．１）、Ｙ_３Ａｌ_５Ｏ_１２（比重：４．５７）、Ｙ_２Ｏ_３：Ｅｕ（比重：３．０〜４．０）を用いた。
【００４６】
一般式（１）で示されるシラン化合物として、ｎ−ヘキシルトリメトキシシラン、ｎ−ヘキシルトリエトキシシラン、ｎ−オクチルトリエトキシシラン、ｎ−デシルトリメトキシシランを用いた。上記以外のシラン化合物として、γ−メルカプトプロピルトリメトキシシランを用いた。
【００４７】
そして、シリコーン樹脂又はポリカーボネート樹脂、無機化合物、一般式（１）で示されるシラン化合物、その他のシラン化合物を表１に示す配合量で配合し、これをディスパーで溶解混合することによって、実施例１、２及び比較例１、２の光半導体用樹脂組成物を調製した。
【００４８】
また、エポキシ樹脂、硬化剤、硬化促進剤、無機化合物、一般式（１）で示されるシラン化合物、その他のシラン化合物を表１に示す配合量で配合し、これをミキサーで均一に混合し、さらに３本ロールで溶融混練し、この溶融混練物を冷却・固化した後に粉砕し、タブレット状に打錠することによって、実施例３〜９及び比較例３、４の光半導体用樹脂組成物を調製した。なお、実施例３、５〜９及び比較例３については、あらかじめ無機化合物をシラン化合物で処理しておいた。
【００４９】
上記のようにして得た各光半導体用樹脂組成物について、密着性、常温通電特性、沈降性の試験を行った。
【００５０】
（密着性）
実施例１、２及び比較例１、２については、インサートとなるＡｇメッキフレームを型枠にセットした後、この型枠内に光半導体用樹脂組成物を流し込み、これを硬化させることによって、密着性を評価するための成形品を作製した。なお、実施例１及び比較例１の硬化条件は、前硬化が９０℃で２時間、後硬化が１５０℃で２時間である。また、実施例２及び比較例２の減圧乾燥条件は、４０℃、０．２Ｔｏｒｒ、５分間である。
【００５１】
一方、実施例３〜９及び比較例３、４については、インサートとなるＡｇメッキフレームをトランスファー成形用金型にセットした後、光半導体用樹脂組成物のタブレットを用いてトランスファー成形を行うことによって、密着性を評価するための成形品を作製した。なお、トランスファー成形時において金型温度は１５０℃、キュアー時間は１２０秒であり、１５０℃で２時間ポストキュアーをした。
【００５２】
そして、上記のようにして得た各成形品について、超音波探査装置（日立建機（株）製）を用いて、封止樹脂とＡｇメッキフレームとの界面の剥離の有無を観察した。上記界面に剥離がみられなかったものを「○」、上記界面に部分的に剥離がみられたものを「△」、上記界面に全体的に剥離がみられたものを「×」として、結果を表１に示す。
【００５３】
（常温通電特性）
実施例１、２及び比較例１、２については、ＧａＡｓ系赤外発光素子を搭載したリードフレームを型枠にセットした後、この型枠内に光半導体用樹脂組成物を流し込み、これを硬化させることによって、常温通電特性を評価するための光半導体装置（パッケージ）を作製した。なお、実施例１及び比較例１の硬化条件は、前硬化が９０℃で２時間、後硬化が１５０℃で２時間である。また、実施例２及び比較例２の減圧乾燥条件は、４０℃、０．２Ｔｏｒｒ、５分間である。
【００５４】
一方、実施例３〜９及び比較例３、４については、ＧａＡｓ系赤外発光素子を搭載したリードフレームをトランスファー成形用金型にセットした後、光半導体用樹脂組成物のタブレットを用いてトランスファー成形を行うことによって、常温通電特性を評価するための光半導体装置（パッケージ）を作製した。なお、トランスファー成形時において金型温度は１５０℃、キュアー時間は１２０秒であり、１５０℃で２時間ポストキュアーをした。
【００５５】
そして、２５℃において、上記のようにして得た各光半導体装置の初期の輝度を測定し、次に５０ｍＡの電流を連続して１０００時間通した後の輝度を測定することによって、通電前後の輝度の測定値から輝度の低下率を求めた。輝度の測定には大塚電子（株）製の輝度測定器を用いた。輝度の低下率が１０％未満であるものを「○」、輝度の低下率が１０〜２０％であるものを「△」、輝度の低下率が２０％を超えるものを「×」として、結果を表１に示す。
【００５６】
（沈降性）
実施例１、２及び比較例１、２については、型枠内に光半導体用樹脂組成物を流し込み、これを硬化させることによって、１辺が１０ｍｍの直方体状の成形品を作製した。なお、実施例１及び比較例１の硬化条件は、前硬化が９０℃で２時間、後硬化が１５０℃で２時間である。また、実施例２及び比較例２の減圧乾燥条件は、４０℃、０．２Ｔｏｒｒ、５分間である。
【００５７】
一方、実施例３〜９及び比較例３、４については、光半導体用樹脂組成物のタブレットを用いてトランスファー成形を行うことによって、１辺が１０ｍｍの直方体状の成形品を作製した。なお、トランスファー成形時において金型温度は１５０℃、キュアー時間は１２０秒であり、１５０℃で２時間ポストキュアーをした。
【００５８】
そして、上記のようにして得た各成形品を用いて、以下のようにして沈降性を評価した。すなわち、各成形品を上下にダイシングカットし、分割して得られた上部成形品と下部成形品の比重をそれぞれ測定した。次に、上部成形品と下部成形品の比重の比を算出し、上部成形品の比重／下部成形品の比重＝１の場合には無機化合物が沈降していないものと判断し、上部成形品の比重／下部成形品の比重＜１の場合には無機化合物が沈降しているものと判断した。前者を「○」、後者を「×」として、結果を表１に示す。
【００５９】
【表１】

【００６０】
表１にみられるように、実施例１〜９はいずれも無機化合物が沈降していないことが確認される。しかも、実施例３、４を比較することにより、あらかじめ無機化合物を一般式（１）で示されるシラン化合物で処理しておくと、密着性を高く得ることができることが確認される。
【００６１】
これに対して、上記シラン化合物を用いていない比較例１〜４はいずれも無機化合物が沈降していることが確認される。
【００６２】
【発明の効果】
上記のように本発明の請求項１に係る光半導体用樹脂組成物は、無機化合物及び上記一般式（１）で示されるシラン化合物を含有するので、このシラン化合物によって、比重の大きい無機化合物を沈降させることなく均一に分散させることができ、封止工程においても均一に分散させた状態で硬化させることができ、光学特性の安定した光半導体装置を製造することができるものである。
【００６３】
また請求項２の発明は、エポキシ樹脂、硬化剤、硬化促進剤を配合したものに、あらかじめ無機化合物を一般式（１）で示されるシラン化合物で処理したものを添加するので、エポキシ樹脂組成物内において無機化合物の沈降を十分に防止し、さらに均一に無機化合物を分散させることができるものである。
【００６４】
また請求項３の発明は、無機化合物の比重が２．０〜９．０であるので、一般式（１）で示されるシラン化合物によって、光半導体用樹脂組成物内における無機化合物の沈降を確実に防止することができるものである。
【００６５】
また請求項４の発明は、無機化合物の含有量が組成物全量に対して０．５〜２０．０質量％であるので、光拡散剤又は蛍光剤として無機化合物を十分に機能させることができると共に、光半導体用樹脂組成物の光透過性を確保することができるものである。
【００６６】
また請求項５の発明は、一般式（１）で示されるシラン化合物の含有量が組成物全量に対して０．０５〜２．０質量％であるので、無機化合物の沈降を十分に防止することができると共に、増粘やゲル化を防止することもできるものである。
【００６７】
また請求項６の発明は、無機化合物として、金属酸化物、金属窒化物、金属炭化物、金属硼化物、金属単体、蛍光剤から選ばれるものを用いるので、一般式（１）で示されるシラン化合物による処理を容易に行うことができるものである。
【００６８】
また請求項７に係る光半導体装置は、請求項１乃至６のいずれかに記載の光半導体用樹脂組成物で光半導体素子を封止するので、光半導体素子を封止している封止樹脂には無機化合物が均一に分散されており、良好な光学特性を長期間、安定して得ることができるものである。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a resin composition for an optical semiconductor used for sealing an optical semiconductor element such as an LED, a phototransistor, a photodiode, a CCD, and an EPROM, and an optical semiconductor device manufactured using the composition. is there.
[0002]
[Prior art]
When encapsulating optical semiconductor elements such as light-emitting elements and light-receiving elements, a resin encapsulation using an epoxy resin composition is required because transparency, adhesion, moisture resistance, electrical insulation, heat resistance, and the like can be increased. A stop has been made. In addition, resin sealing with a composition such as an acrylic resin, a polycarbonate resin, or a silicone resin is also performed in that high light resistance, discoloration resistance, stress buffering property, and the like can be obtained. Among these resin encapsulations, resin encapsulation by transfer molding using an epoxy resin composition is excellent in workability and mass productivity.
[0003]
By the way, conventionally, fine particles called a light diffusing agent have been added to a resin composition for sealing a light emitting element in order to adjust a view angle of light emitted from the light emitting element. When the fine particles are an organic compound (specific gravity: about 1.2), the difference in specific gravity from the resin composition (specific gravity: about 1.2) is very small. It is relatively easy to obtain a resin composition in which is dispersed uniformly. However, when the fine particles are an inorganic compound (specific gravity: about 2.0 or more), the difference in specific gravity from the resin composition (specific gravity: about 1.2) becomes large, so that the light diffusion of such an inorganic compound becomes large. It is difficult to obtain a resin composition in which the agent is uniformly dispersed. In this case, even if the light diffusing agent of the inorganic compound can be uniformly dispersed in the resin composition, the light diffusing agent of the inorganic compound settles in the sealing step, so that the inside of the resin composition after curing is hardened. Since the dispersion unevenness is likely to occur, the contrast of the emission luminance becomes unclear. As described above, particularly when inorganic compound fine particles are used as the light diffusing agent, it has been difficult to mass-produce an optical semiconductor device having stable optical quality.
[0004]
Further, a fluorescent agent or a luminous agent may be added to the resin composition for sealing the light emitting element. Here, the fluorescent agent is an inorganic compound, which absorbs light emitted from the light-emitting element, emits light different from the absorbed light, and the luminous agent is an inorganic compound, and emits light from the light-emitting element. Even after the light output is stopped, the light is continuously emitted by the absorbed light energy for a certain period. It is difficult to uniformly disperse such an inorganic compound in the resin composition without causing sedimentation. Therefore, in general, a method of adding a fluorescent agent or the like to a paste-like resin to prevent sedimentation, coating or potting the paste-like resin on the surface of a light-emitting element, and then sealing the whole with a transparent resin. Is adopted. However, in such a method, the number of manufacturing steps of the optical semiconductor device increases, which leads to an increase in cost, and coating unevenness easily occurs in the paste-like resin, and the coating unevenness causes variation in optical quality such as emission luminance contrast. Is increased.
[0005]
As a method of dispersing an inorganic compound such as silica in a composition, a method of improving the affinity between a resin component and an inorganic compound by using a silane coupling agent has been used (for example, Patent Documents 1 and 2). reference.). At this time, as the silane coupling agent, a functional group (eg, epoxy group, amino group, mercapto group, etc.) reactive with a functional group (eg, epoxy group, phenolic hydroxyl group, etc.) contained in the resin component. Are used.
[0006]
[Patent Document 1]
JP-A-2-110161
[Patent Document 2]
Japanese Patent No. 3290127
[0007]
[Problems to be solved by the invention]
A general resin composition for encapsulating a semiconductor element such as an IC or an LSI has a large content of an inorganic compound (for example, 35 to 95% by mass based on the total amount of the resin composition). As long as the affinity of the interface between the resin component and the inorganic compound is improved by the coupling agent, even if sedimentation or the like occurs in a sealing step such as molding or potting, the spot does not cause a problem.
[0008]
However, with respect to the general resin composition as described above, the resin composition used for sealing the optical semiconductor element as described above particularly has a low content of an inorganic compound (for example, resin Even if the affinity of the interface between the resin component and the inorganic compound is improved by the silane-based coupling agent, even if the viscosity of the sealing material is reduced in the sealing step, The compound sediments remarkably, and the dispersion unevenness generated inside the cured resin composition cannot be ignored.
[0009]
The present invention has been made in view of the above points, it is possible to uniformly disperse an inorganic compound having a large specific gravity without sedimentation, and it is possible to cure in a state of being uniformly dispersed in a sealing step. It is an object of the present invention to provide an epoxy resin composition for encapsulating an optical semiconductor capable of manufacturing an optical semiconductor device having stable optical characteristics, and an optical semiconductor device having stable optical characteristics.
[0010]
[Means for Solving the Problems]
The resin composition for an optical semiconductor according to claim 1 of the present invention is characterized by containing an inorganic compound and a silane compound represented by the following general formula (1).
[0011]
Embedded image

[0012]
According to a second aspect of the present invention, in the first aspect, an inorganic compound previously treated with a silane compound represented by the general formula (1) is added to a mixture of an epoxy resin, a curing agent, and a curing accelerator. It is characterized by becoming.
[0013]
The invention according to claim 3 is characterized in that, in claim 1 or 2, the specific gravity of the inorganic compound is 2.0 to 9.0.
[0014]
A fourth aspect of the present invention is characterized in that in any one of the first to third aspects, the content of the inorganic compound is 0.5 to 20.0% by mass based on the total amount of the composition.
[0015]
According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the content of the silane compound represented by the general formula (1) is 0.05 to 2.0% by mass based on the total amount of the composition. It is characterized by the following.
[0016]
According to a sixth aspect of the present invention, in any one of the first to fifth aspects, the inorganic compound is selected from a metal oxide, a metal nitride, a metal carbide, a metal boride, a simple metal, and a fluorescent agent. It is characterized by the following.
[0017]
An optical semiconductor device according to a seventh aspect is characterized in that an optical semiconductor element is sealed with the optical semiconductor resin composition according to any one of the first to sixth aspects.
[0018]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described.
[0019]
The resin composition for an optical semiconductor according to the present invention contains an inorganic compound and a silane compound represented by the general formula (1) in addition to the resin component.
[0020]
The resin component is not particularly limited as long as it is relatively less colored so as to ensure light transmittance. For example, a non-solvent type or a solvent type liquid resin (a thermosetting resin) such as a silicone resin For example, a solvent type liquid resin (thermoplastic resin) such as a polycarbonate resin, an epoxy resin (thermosetting resin), or the like can be used.
[0021]
The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, and examples thereof include a bisphenol A epoxy resin, a bisphenol F epoxy resin, a bisphenol S epoxy resin, and an ortho resin. Cresol novolak type epoxy resin, alicyclic epoxy resin, triglycidyl isocyanurate, aliphatic epoxy resin, epoxy resin in which aromatic ring of aromatic epoxy resin is hydrogenated, or the like can be used. One of these epoxy resins may be used alone, or a mixture of two or more thereof may be used.
[0022]
When an epoxy resin is used as the resin component, a curing agent can be used. The curing agent is not particularly limited as long as it reacts with the epoxy resin, but it is preferable to use a relatively less coloring agent. For example, hexahydrophthalic anhydride, acid anhydrides such as tetrahydrophthalic anhydride, phenol, cresol, xylenol, polyphenols such as novolak-type phenolic resins obtained by condensation reaction of resorcinol with formaldehyde, liquid polymercaptan and polysulfide resins. A mercaptan-based curing agent or the like can be used. In addition to these curing agents, amine-based curing agents can also be used. However, since discoloration during curing is large, it is necessary to pay attention to the amount of addition when used. One of the above curing agents may be used alone, or two or more of them may be used in combination. The equivalent ratio of the epoxy resin to the curing agent is preferably 0.8 to 2 from the viewpoints of tint and physical properties of the cured product.
[0023]
When an epoxy resin and a curing agent are used, a curing accelerator can be used. The curing accelerator is not particularly limited as long as it has an action of accelerating the reaction between the epoxy resin and the curing agent, but it is preferable to use a relatively less colored one. For example, organic phosphine-based curing accelerators such as triphenylphosphine and diphenylphosphine, and tertiary amine-based curing accelerators such as 1,8-diazabicyclo (5,4,0) undecene-7, triethanolamine and benzyldimethylamine And organic salts such as tetraphenylphosphonium / tetraphenylborate and tetraphenylphosphonium / bromide, and imidazoles such as 1-benzyl-2-phenylimidazole. One of these curing accelerators may be used alone, or two or more of them may be used in combination. The content of the curing accelerator is preferably 0.05 to 5% by mass based on the total amount of the resin composition for optical semiconductors. When the content of the curing accelerator is less than 0.05% by mass, the reaction between the epoxy resin and the curing agent cannot be sufficiently promoted, and the molding cycle may be deteriorated. Conversely, when the content of the curing accelerator is more than 5% by mass, the gelation time is shortened, the moldability is deteriorated, and voids and unfilled portions may be generated.
[0024]
The inorganic compound is not particularly limited, but for example, silica (specific gravity: 2.0 to 2.6), alumina (specific gravity: 3.5), titanium oxide (specific gravity: 4.3), titanic acid Metal oxides represented by barium (specific gravity: 5.5), magnesium oxide (specific gravity: 3.3), beryllium oxide (specific gravity: 3.0), aluminum nitride (specific gravity: 3.3), boron nitride ( A metal nitride represented by specific gravity: 3.5), a metal carbide represented by silicon carbide (specific gravity: 3.1), a metal boride represented by titanium boride (specific gravity: 4.2), Simple metal such as copper powder (specific gravity: 8.9), ZnS: Cu-based (specific gravity: 4.1), Y ₃ Al ₅ O ₁₂ Fluorescent agents represented by YAG type (specific gravity: 4.5 to 5.5), Eu type (specific gravity: 3.0 to 4.0), and the like can be used.
[0025]
Inorganic compounds other than those described above can be used, but as the inorganic compound, in particular, those selected from the above-described metal oxides, metal nitrides, metal carbides, metal borides, simple metals, and fluorescent agents are preferably used. preferable. With such an inorganic compound, the treatment with the silane compound represented by the general formula (1) can be easily performed.
[0026]
The specific gravity of the inorganic compound is preferably 9.0 or less. When the specific gravity of the inorganic compound is larger than 9.0, the inorganic compound is likely to precipitate even when treated with the silane compound represented by the general formula (1), and may not be uniformly dispersed in the resin composition for optical semiconductors. is there. The specific gravity of the inorganic compound is preferably as small as possible, but the practical lower limit is 2.0.
[0027]
The content of the inorganic compound is preferably 0.5 to 20.0% by mass based on the total amount of the resin composition for optical semiconductors. When the content of the inorganic compound is less than 0.5% by mass, the inorganic compound may not function sufficiently as a light diffusing agent or a fluorescent agent. On the other hand, when the content of the inorganic compound is more than 20.0% by mass, the light transmittance of the resin composition for an optical semiconductor may not be secured.
[0028]
The silane compound represented by the general formula (1) is not particularly limited, but for example, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, n-octyltriethoxysilane, n-decyltrimethoxy Silane or the like can be used.
[0029]
During curing of the resin composition for an optical semiconductor, three of the four functional groups (R1 to R4) bonded to silicon (Si) of the silane compound represented by the general formula (1) (R1 To R3) form a chemical bond with the inorganic compound, and the remaining one functional group (R4) forms a chemical bond with the resin component, whereby the adhesiveness can be obtained for a long time. When is not yet cured, the functional group R4 has an affinity for the resin component, but no chemical bond has yet been formed with the resin component. Therefore, the inorganic compound that has formed a chemical bond with the silane compound can freely move in the uncured optical semiconductor resin composition. After stirring, since the functional group R4 has a long chain, the inorganic compound can attract many of the resin components against the gravity by the functional group R4, and the inorganic compound easily precipitates. In addition, it is possible to maintain a state of being uniformly dispersed in the resin composition for optical semiconductors for a long time. As described above, by using the silane compound, the inorganic compound having a large specific gravity can be uniformly dispersed in the resin composition for an optical semiconductor having a small content of the inorganic compound without sedimentation.
[0030]
The content of the silane compound represented by the general formula (1) is preferably 0.05 to 2.0% by mass based on the total amount of the resin composition for an optical semiconductor. If the content of the silane compound is less than 0.05% by mass, the precipitation of the inorganic compound may not be sufficiently prevented. Conversely, if the content of the silane compound is more than 2.0% by mass, the physical properties may be reduced or the viscosity may be increased. The treatment of the inorganic compound with the silane compound may be partial, or the inorganic compound treated with the silane compound and the inorganic compound not treated with the silane compound may be used in combination.
[0031]
The resin composition for an optical semiconductor includes, in addition to a resin component, an inorganic compound, and a silane compound represented by the general formula (1), a discoloration inhibitor, a degradation inhibitor, a dye, an ultraviolet absorber, a silane coupling agent, and a modifier. And additives such as a plasticizer, a light diffusing agent, and a diluent.
[0032]
Then, a resin composition for an optical semiconductor can be prepared by blending a resin component, an inorganic compound, a silane compound represented by the general formula (1), and other additives as necessary.
[0033]
Specifically, for example, when a non-solvent type or solvent type liquid resin such as a silicone resin or a solvent type liquid resin such as a polycarbonate resin is used as a resin component, an inorganic compound and a general formula other than this resin component are used. The resin composition for optical semiconductors can be prepared as a silicone resin composition or a polycarbonate resin composition by dissolving and mixing the silane compound represented by (1) and other additives as necessary with a disper or the like.
[0034]
On the other hand, when an epoxy resin is used as a resin component, in addition to the resin component, a curing agent, a curing accelerator, an inorganic compound, a silane compound represented by the general formula (1), and if necessary, other additives are dispersed. The resin composition for optical semiconductors can be prepared as a liquid epoxy resin composition by dissolving and mixing or by uniformly mixing with a mixer or blender and then melt-kneading with three rolls or the like. In addition, by cooling and solidifying the product obtained by melt mixing or melt kneading as described above, pulverizing, and, if necessary, tableting, a solid epoxy resin composition for an optical semiconductor is used. A resin composition can be prepared.
[0035]
Here, when the epoxy resin is used as the resin component, rather than mixing all the components at the same time as described above, an epoxy resin, a curing agent, a curing accelerator, and a compound containing other additives are added to the inorganic compound in advance. It is preferable to add a product obtained by treating with a silane compound represented by the general formula (1). When all the components of the epoxy resin composition are simultaneously mixed, the three functional groups (R1 to R3) of the silane compound form a chemical bond with components other than the inorganic compound, and the silane compound is wasted. As a result, there is a possibility that the precipitation of the inorganic compound in the epoxy resin composition cannot be sufficiently prevented. In addition, since the content of the inorganic compound is originally small, the inorganic compound may precipitate before the silane compound encounters the inorganic compound and forms a chemical bond. However, by treating the inorganic compound with the silane compound in advance, it is possible to prevent the silane compound from being wasted, and to surely form a chemical bond between the silane compound and the inorganic compound. It can be formed beforehand and can sufficiently prevent sedimentation of the inorganic compound in the epoxy resin composition, and can evenly disperse the inorganic compound.
[0036]
Next, the optical semiconductor device can be manufactured by sealing and molding using the resin composition for an optical semiconductor obtained as described above.
[0037]
That is, when the resin composition for an optical semiconductor is solid (for example, a tablet), after setting a lead frame on which an optical semiconductor element such as an LED is mounted in a transfer molding die, the resin composition for an optical semiconductor is used. By performing transfer molding using a tablet of an object, an optical semiconductor device in which an optical semiconductor element is sealed with a sealing resin of a resin composition for an optical semiconductor can be manufactured.
[0038]
When the resin composition for an optical semiconductor is in a liquid state, a method such as casting, potting, and printing may be used. For example, after setting a lead frame on which an optical semiconductor element such as an LED is mounted in a mold, a resin composition for an optical semiconductor is poured into the mold and cured to form the optical semiconductor element into a resin for an optical semiconductor. An optical semiconductor device sealed with a sealing resin of a composition can be manufactured.
[0039]
Whatever the molding, the resin composition for an optical semiconductor is in a liquid state in the encapsulating step. At this time, the silane compound represented by the general formula (1) can prevent the inorganic compound from settling. Further, the resin composition for an optical semiconductor can be cured in a state where the inorganic compound is uniformly dispersed by the silane compound, and the adhesiveness can be increased over a long period of time.
[0040]
In the optical semiconductor device thus obtained, since the inorganic compound is uniformly dispersed in the sealing resin for sealing the optical semiconductor element, good optical characteristics can be stably obtained for a long period of time. Is what you can do. For example, when an optical semiconductor device is manufactured using a light-emitting element as an optical semiconductor element, the optical semiconductor device has a sharp contrast in emission luminance and can emit light stably with high luminance.
[0041]
【Example】
Hereinafter, the present invention will be described specifically with reference to Examples.
[0042]
As resin components, silicone resin “KE-103” manufactured by Shin-Etsu Chemical Co., Ltd., polycarbonate resin “NSC-1000” manufactured by Nippon Seika Co., Ltd., and epoxy resin Dainippon Ink and Chemicals, Inc. "EXA7015" manufactured by Daicel Chemical Industries, Ltd., "EHPE3150" manufactured by Daicel Chemical Industries, Ltd. and "tris (2,3-epoxypropyl) isocyanurate" manufactured by Nissan Chemical Industries, Ltd. were used.
[0043]
"HHPA" manufactured by Shin Nippon Rika Co., Ltd. was used as a curing agent.
[0044]
"Tetra-n-butylphosphonium bromide" manufactured by Hokuko Chemical Industry Co., Ltd. was used as a curing accelerator.
[0045]
As inorganic compounds, silica is "SO25R" (specific gravity: 2.0 to 2.6) manufactured by Admafine, magnesium oxide is "micromag" (specific gravity: 3.3) manufactured by Kyowa Chemical Co., Ltd., and aluminum nitride is used. "AIN" (specific gravity: 3.3) manufactured by Tachion Co., Ltd. Copper powder (specific gravity: 8.9) manufactured by Niei Pharmaceutical Co., Ltd., ZnS: Cu (specific gravity: 4.1) as a fluorescent agent, Y ₃ Al ₅ O ₁₂ (Specific gravity: 4.57), Y ₂ O ₃ : Eu (specific gravity: 3.0 to 4.0) was used.
[0046]
As the silane compound represented by the general formula (1), n-hexyltrimethoxysilane, n-hexyltriethoxysilane, n-octyltriethoxysilane, and n-decyltrimethoxysilane were used. As a silane compound other than the above, γ-mercaptopropyltrimethoxysilane was used.
[0047]
Then, a silicone resin or a polycarbonate resin, an inorganic compound, a silane compound represented by the general formula (1), and other silane compounds were blended in the blending amounts shown in Table 1, and these were dissolved and mixed with a disper to obtain Example 1. 2 and Comparative Examples 1 and 2 were prepared.
[0048]
In addition, an epoxy resin, a curing agent, a curing accelerator, an inorganic compound, a silane compound represented by the general formula (1), and other silane compounds are blended in the blending amounts shown in Table 1, and these are uniformly mixed with a mixer. Further, the resin composition for optical semiconductors of Examples 3 to 9 and Comparative Examples 3 and 4 was melt-kneaded with three rolls, cooled and solidified, then pulverized and tabletted into tablets. Prepared. In Examples 3, 5 to 9, and Comparative Example 3, the inorganic compound was previously treated with a silane compound.
[0049]
Each of the resin compositions for optical semiconductors obtained as described above was tested for adhesion, normal-temperature conduction characteristics, and sedimentation.
[0050]
(Adhesion)
In Examples 1 and 2 and Comparative Examples 1 and 2, after setting an Ag plating frame as an insert in a mold, a resin composition for an optical semiconductor was poured into the mold, and the resin composition was cured to obtain close contact. A molded article for evaluating the properties was prepared. The curing conditions of Example 1 and Comparative Example 1 are pre-curing at 90 ° C. for 2 hours and post-curing at 150 ° C. for 2 hours. The drying conditions under reduced pressure in Example 2 and Comparative Example 2 were 40 ° C., 0.2 Torr, and 5 minutes.
[0051]
On the other hand, for Examples 3 to 9 and Comparative Examples 3 and 4, after setting the Ag plating frame as an insert in the transfer molding die, transfer molding was performed using a tablet of the resin composition for an optical semiconductor. A molded article for evaluating the adhesion was produced. During the transfer molding, the mold temperature was 150 ° C., the curing time was 120 seconds, and post-curing was performed at 150 ° C. for 2 hours.
[0052]
Then, for each molded product obtained as described above, the presence or absence of peeling of the interface between the sealing resin and the Ag plating frame was observed using an ultrasonic probe (manufactured by Hitachi Construction Machinery Co., Ltd.).剥離 indicates that no separation was observed at the interface, △ indicates that separation was partially observed at the interface, and × indicates that separation was entirely observed at the interface. Table 1 shows the results.
[0053]
(Normal temperature conduction characteristics)
In Examples 1 and 2 and Comparative Examples 1 and 2, after setting a lead frame on which a GaAs-based infrared light emitting element was mounted in a mold, the resin composition for an optical semiconductor was poured into the mold and cured. As a result, an optical semiconductor device (package) for evaluating normal-temperature conduction characteristics was manufactured. The curing conditions of Example 1 and Comparative Example 1 are pre-curing at 90 ° C. for 2 hours and post-curing at 150 ° C. for 2 hours. The drying conditions under reduced pressure in Example 2 and Comparative Example 2 were 40 ° C., 0.2 Torr, and 5 minutes.
[0054]
On the other hand, in Examples 3 to 9 and Comparative Examples 3 and 4, a lead frame on which a GaAs-based infrared light emitting element was mounted was set in a transfer molding die, and then transferred using a tablet of a resin composition for an optical semiconductor. By performing the molding, an optical semiconductor device (package) for evaluating the normal-temperature conduction characteristics was manufactured. During the transfer molding, the mold temperature was 150 ° C., the curing time was 120 seconds, and post-curing was performed at 150 ° C. for 2 hours.
[0055]
Then, at 25 ° C., the initial luminance of each optical semiconductor device obtained as described above was measured, and then the luminance after continuously passing a current of 50 mA for 1000 hours was measured. The rate of decrease in luminance was determined from the measured luminance value. The luminance was measured using a luminance meter manufactured by Otsuka Electronics Co., Ltd. When the rate of decrease in luminance was less than 10%, the result was evaluated as “○”, when the rate of decrease in luminance was 10 to 20%, as “△”, and when the rate of decrease in luminance exceeded 20%, as “×”. Are shown in Table 1.
[0056]
(Settling)
In Examples 1 and 2 and Comparative Examples 1 and 2, a resin composition for an optical semiconductor was poured into a mold and cured to produce a rectangular parallelepiped molded product having a side of 10 mm. The curing conditions of Example 1 and Comparative Example 1 are pre-curing at 90 ° C. for 2 hours and post-curing at 150 ° C. for 2 hours. The drying conditions under reduced pressure in Example 2 and Comparative Example 2 were 40 ° C., 0.2 Torr, and 5 minutes.
[0057]
On the other hand, in Examples 3 to 9 and Comparative Examples 3 and 4, transfer molding was performed using a tablet of the resin composition for an optical semiconductor, thereby producing a rectangular parallelepiped molded product having a side of 10 mm. During the transfer molding, the mold temperature was 150 ° C., the curing time was 120 seconds, and post-curing was performed at 150 ° C. for 2 hours.
[0058]
Then, the sedimentation property was evaluated as follows using each of the molded products obtained as described above. That is, each molded product was vertically diced and cut, and the specific gravities of the upper molded product and the lower molded product obtained by division were measured. Next, the ratio of the specific gravity of the upper molded product and the lower molded product is calculated, and when the specific gravity of the upper molded product / the specific gravity of the lower molded product = 1, it is determined that the inorganic compound has not settled. When the specific gravity of the lower molded product / the specific gravity of the lower molded product <1, it was determined that the inorganic compound had precipitated. The results are shown in Table 1, with the former being "O" and the latter being "X".
[0059]
[Table 1]

[0060]
As shown in Table 1, it was confirmed that the inorganic compounds did not precipitate in any of Examples 1 to 9. Moreover, by comparing Examples 3 and 4, it is confirmed that if the inorganic compound is previously treated with the silane compound represented by the general formula (1), high adhesion can be obtained.
[0061]
On the other hand, it was confirmed that the inorganic compounds were precipitated in Comparative Examples 1 to 4 in which the silane compound was not used.
[0062]
【The invention's effect】
As described above, the resin composition for an optical semiconductor according to claim 1 of the present invention contains an inorganic compound and a silane compound represented by the general formula (1). The optical semiconductor device can be uniformly dispersed without settling, can be cured in a uniformly dispersed state even in a sealing step, and an optical semiconductor device having stable optical characteristics can be manufactured.
[0063]
According to a second aspect of the present invention, an epoxy resin composition obtained by treating an inorganic compound in advance with a silane compound represented by the general formula (1) is added to a mixture of an epoxy resin, a curing agent, and a curing accelerator. In this case, the precipitation of the inorganic compound can be sufficiently prevented, and the inorganic compound can be dispersed more uniformly.
[0064]
In the invention of claim 3, since the specific gravity of the inorganic compound is 2.0 to 9.0, the silane compound represented by the general formula (1) ensures the precipitation of the inorganic compound in the resin composition for optical semiconductors. Can be prevented.
[0065]
In the invention of claim 4, since the content of the inorganic compound is 0.5 to 20.0% by mass relative to the total amount of the composition, the inorganic compound can function sufficiently as a light diffusing agent or a fluorescent agent. At the same time, the light transmittance of the resin composition for optical semiconductors can be ensured.
[0066]
In the invention of claim 5, since the content of the silane compound represented by the general formula (1) is 0.05 to 2.0% by mass based on the total amount of the composition, sedimentation of the inorganic compound is sufficiently prevented. It is possible to prevent thickening and gelation.
[0067]
According to the invention of claim 6, the inorganic compound is selected from the group consisting of metal oxides, metal nitrides, metal carbides, metal borides, simple metals, and fluorescent agents. Therefore, the silane compound represented by the general formula (1) is used. Can be easily performed.
[0068]
Further, in the optical semiconductor device according to claim 7, since the optical semiconductor element is sealed with the resin composition for an optical semiconductor according to any one of claims 1 to 6, the sealing resin sealing the optical semiconductor element. Has an inorganic compound uniformly dispersed therein, and can provide good optical properties stably for a long period of time.

Claims (7)

A resin composition for an optical semiconductor, comprising an inorganic compound and a silane compound represented by the following general formula (1).

2. The light according to claim 1, wherein an inorganic compound previously treated with a silane compound represented by the general formula (1) is added to a mixture of an epoxy resin, a curing agent, and a curing accelerator. A resin composition for a semiconductor. The resin composition for an optical semiconductor according to claim 1, wherein the specific gravity of the inorganic compound is 2.0 to 9.0. The resin composition for an optical semiconductor according to any one of claims 1 to 3, wherein the content of the inorganic compound is 0.5 to 20.0% by mass based on the total amount of the composition. 5. The optical semiconductor according to claim 1, wherein the content of the silane compound represented by the general formula (1) is 0.05 to 2.0% by mass based on the total amount of the composition. Resin composition. The optical semiconductor according to any one of claims 1 to 5, wherein the inorganic compound is selected from a metal oxide, a metal nitride, a metal carbide, a metal boride, a simple metal, and a fluorescent agent. Resin composition. An optical semiconductor device comprising an optical semiconductor element encapsulated with the resin composition for an optical semiconductor according to claim 1.