JP2004273619A - Test piece setting device for vacuum processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a test piece setting device for vacuum processing apparatus which can realize fine process of test piece in the more simplified structure by precisely adjusting temperature in a wider range. <P>SOLUTION: The test piece setting device for vacuum processing apparatus which is provided with a support block 4 to set and hold a test piece within a vacuum processing chamber and an electrode block 1 which is provided therein with coolant paths 11, 12 to support the support block 4. The electrode block 1 supports the support block 4 via the peripheral portions of the electrode block 1 and the support block 4. A space 14 to which the coolant can be supplied is formed in the center area of a test piece setting portion consisting of the electrode block 1 and support block 4. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a sample mounting device for a vacuum processing device, and more particularly to a sample mounting device for a vacuum processing device that can adjust the temperature of the sample mounting device.
[0002]
[Prior art]
With the recent increase in the degree of integration of semiconductor elements, circuit patterns have continued to be miniaturized, and the required processing dimensional accuracy has become increasingly severe. In addition, at this time, it is required to improve the throughput and to cope with an increase in the area of the object to be processed, and the temperature controllability of the semiconductor wafer during the processing is extremely important.
[0003]
For example, in an etching process that requires processing of a groove having a high aspect ratio (narrow and deep groove), anisotropic etching is required. To achieve this, a process of performing etching while protecting the side walls with an organic polymer is used. However, in this case, the generation state of the organic polymer serving as the protective film changes depending on the temperature. At this time, if the temperature in the surface of the semiconductor wafer during the etching process is unevenly distributed, the degree of generation of the sidewall protective film may vary in the surface of the wafer, resulting in a problem that the etching shape is also uneven. is there.
[0004]
In addition, the reaction products may reattach to the etched surface and lower the etching rate. However, the distribution of the reaction products tends to be larger at the center of the semiconductor wafer than at the periphery of the semiconductor wafer. The etching rate is lower than in the vicinity, so that the etching shape in the semiconductor wafer surface varies in the wafer surface.
[0005]
In order to improve this, it is effective to raise the temperature near the center of the wafer compared with the vicinity of the outer periphery to suppress the re-adhesion of reactive products to the etched surface. The temperature of the wafer or the stage is controlled to be uniform in the plane, or arbitrarily in the plane of the semiconductor wafer to be higher in the center and lower in the outer circumference to suppress the influence of the reaction product distribution. Need to be adjusted.
[0006]
As a conventional technique for controlling the temperature of a semiconductor wafer during such processing, for example, Patent Document 1 is known. In Patent Literature 1, a plurality of independent coolant flow paths capable of controlling the flow rate of a coolant are provided in a metal electrostatic adsorption electrode block constituting a holding stage, and a dielectric film is provided on a surface of the electrode block. It has a structure.
[0007]
Further, in Patent Document 2, in order to control the in-plane temperature distribution of the semiconductor wafer, two refrigerant channels are provided concentrically inside the electrostatic chucking electrode, and the outer refrigerant channels are relatively provided. A structure for circulating a low-temperature refrigerant and a relatively high-temperature refrigerant in an inner refrigerant passage is disclosed. Patent Literature 3 discloses a sample stage (holding stage) in which a metal electrode block is divided, a coolant channel or a heater is provided in each of the electrode blocks, and temperature control is performed.
[0008]
[Patent Document 1]
JP 2000-216140 A
[Patent Document 2]
Japanese Patent Application Laid-Open No. Hei 9-17770
[Patent Document 3]
JP-A-8-45909
[Problems to be solved by the invention]
As described above, in the related art, the structure is studied for the purpose of controlling the temperature of the sample stage. However, in these conventional techniques, the temperature of the sample stage is increased due to the influence of heat input from the plasma during the process depending on the set temperature of the sample stage. Has not been taken into account in that the temperature gradually rises, causing a difference between the actual temperature of the sample stage and the set temperature, thereby adversely affecting the processing.
[0012]
Further, in the related art, there is a problem in that a plurality of refrigerant flow paths are required, which results in a complicated and large structure, and an increase in manufacturing and maintenance costs.
[0013]
An object of the present invention is to provide a sample mounting apparatus for a vacuum processing apparatus, which has a simpler structure and can precisely control a temperature in a larger range to process a sample finely.
[0014]
[Means for Solving the Problems]
The present invention employs the following means in order to solve the above problems.
[0015]
A support block for mounting and holding a sample in a vacuum processing chamber, and a sample mounting apparatus for an empty processing apparatus including a coolant flow path therein and an electrode block supporting the support block, The electrode block supports the support block through the electrode block and the periphery of the support block, and forms a space through which a coolant can flow in a central portion of the sample mounting portion including the electrode block and the support block.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram illustrating a plasma processing apparatus to which a sample mounting device (sample stage) of the present invention can be applied. In FIG. 1, reference numeral 100 denotes a plasma processing apparatus, and 101 denotes a vacuum processing chamber. Above the plasma processing apparatus, a high-frequency radio wave (microwave in this embodiment) made of ceramics or quartz is introduced into the vacuum processing chamber 101. An introduction window 102 is arranged. In the vacuum processing chamber 101, a sample mounting device 103 on which a wafer 105 as a sample to be processed is mounted is disposed.
[0017]
In the vacuum processing chamber 101, a microwave 108, which is a radio wave generated by a magnetron 107, propagates through a waveguide 109 and is introduced through the microwave introduction window 102. The processing gas is supplied from the inlet 106 of the processing gas. Further, a solenoid coil 110 is arranged outside the vacuum processing chamber 101 so that the cross section of the vacuum processing chamber 101 is substantially concentric with the circle along the outer periphery of the substantially circular container. A magnetic field having a predetermined intensity distribution is supplied from the solenoid coil 110 into the vacuum processing chamber 101.
[0018]
In the plasma processing apparatus according to the present embodiment, the wafer 105 is transferred from the outside of the vacuum processing chamber 101 to the inside while being held by an arm capable of expanding and contracting the robot 104 as the transfer means, and It is placed on the device 103. Thereafter, the gas in the processing chamber 101 is exhausted from the exhaust port 120 by an exhaust means such as a vacuum pump (not shown) and decompressed.
[0019]
Further, the processing gas is introduced from the introduction port 106 as described above, and the operation of the vacuum pump as the pressure reducing means balances the supply amount of the introduced processing gas and the discharge amount of the exhausted gas, The pressure inside the vacuum processing chamber is adjusted to a predetermined pressure. Although not shown, in the apparatus of the present embodiment, a sensor for detecting the pressure in the vacuum processing chamber or a sensor for detecting the exhaust amount of the vacuum pump, a regulator valve for adjusting the introduction amount of the processing gas, a vacuum pump, etc. The flow control means, the magnetron 107, the high-frequency power supply 111, the DC power supply 112, and the transfer means 104 are connected to each other, and receive the output of the detection result from the sensor to adjust the output from the flow control means, the magnetron 107, and the power supply. A control device is provided.
[0020]
In such an apparatus, electrons generated by the microwaves 108 radiated into the vacuum processing chamber 101 after being decompressed receive the action of the simultaneously supplied magnetic field and collide with the processing gas, thereby causing the processing chamber 1 Plasma is formed in the space above the wafer inside.
[0021]
Further, the sample mounting device 103 has a wafer mounting surface, and is supplied with a bias voltage from a high-frequency power supply 111 and a DC power supply 112. The voltage by the supplied power is generated in the plasma. Certain ions are attracted toward the sample mounting device 103 and the wafer 105 thereon, and this is brought into contact with the surface of the wafer 105 to cause a chemical reaction.
[0022]
The wafer surface is etched by this chemical reaction, and a product generated as a result of the chemical reaction is exhausted from the exhaust port 120 together with particles of other gases in the plasma.
[0023]
FIG. 2 is a cross-sectional view illustrating details of the sample mounting device 103 illustrated in FIG. 1, and FIG. 3 is a diagram illustrating a configuration of a coolant channel.
[0024]
In FIG. 2, the sample mounting device 103 has an electrode block 1 made of aluminum and supplied with the bias power, a stainless steel guide member 2 and a base member 3 below the electrode block 1. Further, a support block 4 provided with a dielectric film in contact with the semiconductor wafer 105 placed thereon and a ceramic electrode cover 5 are provided above the semiconductor block 105. For example, a 12 inch (300 mm diameter) semiconductor wafer is targeted. In this case, the diameter is 320 mm and the total thickness is 25 mm.
[0025]
Here, first, as shown in FIG. 3, slits 11, 12 which are arranged in a spiral shape on the lower surface of the electrode block 1 and form a flow path of the refrigerant in the electrode block 1 have an inner periphery. Side (the center side of the sample placement device 103) and the outer periphery side (the outer periphery side of the sample placement device 103), and are arranged substantially concentrically between them to form the inner periphery side. A slit 13 (radius = 90 mm, width = 5 mm, height (depth) = 18 mm) is formed as a member that suppresses heat transfer between the outer periphery and the outer periphery.
[0026]
Then, the guide member 2 is superimposed on the lower surface of the electrode block 1 via the base member 2 and fixed by bolts 6 so that the open portions of the slits 11, 12, and 13 are closed. I have. At this time, a gas introduction hole 7 is provided so as to penetrate the electrode block 1, the base member 3, and the guide member 2.
[0027]
Next, the support block 4 is made of, for example, high-purity alumina ceramics and has a predetermined thickness. However, the material and thickness of the support block 4 are not limited to this example. In the case of a synthetic resin, the thickness can be selected accordingly.
[0028]
A dielectric layer is formed on the surface of the support block 4 which is in contact with the wafer 105. The dielectric layer communicates with the gas introduction hole 7 and has a linear slit extending radially and a plurality of slits communicating with the slit. A gas transmission path such as a concentric slit is provided, so that when the semiconductor wafer 105 is mounted on the sample mounting device 103, a gap between the dielectric layer and the semiconductor wafer 105 is provided. He gas for heat transfer is introduced from the gas introduction hole 7.
[0029]
The slits 11 and 12 for the flow channel of the electrode block 1 are provided with inlet portions 11A and 12A for a refrigerant (or a heat medium) and discharge portions 11B and 12B, respectively. The slits 11 and 12 are configured to be able to function as independent heat medium flow passages for allowing a temperature control refrigerant to flow.
[0030]
The inlets 11A and 12A and the outlets 11B and 12B of the slits 11 and 12 are connected to independent refrigerant supply units 51 and 52, respectively. One can be adjusted individually.
[0031]
The arrangement shape of the flow passage slits 11 and 12 constituting the refrigerant flow passage is not limited to the spiral shape shown in FIG. 2 or FIG.
[0032]
FIG. 4 is a diagram illustrating another example of the configuration of the refrigerant flow path. As shown in the figure, each of the flow path slits 11 and 12 is formed in a plurality of concentric circles. In this case, the refrigerant flows in opposite directions to each other in a semicircular direction.
[0033]
Further, between the support block 4 and the electrode block 1, a heat conducting member 17 for contacting them and performing heat transfer therebetween is arranged. Further, a space 14 formed by the heat conductive member 17 and the electrode block 1 and the support block 4 is formed. The space 14 is connected to the slit 12 in series, though not shown. After passing through the slit 12, the refrigerant flows through the inside thereof, is discharged from a discharge port (not shown), and is introduced into the refrigerant supply unit 52. That is, the space 14 is a refrigerant flow path through which the refrigerant flows.
[0034]
In this embodiment, in these configurations, a DC voltage and a high frequency are applied to the electrode block 1 of the sample mounting device 103, and etching is performed while controlling the temperature of the semiconductor wafer 105.
The embodiment of the plasma processing apparatus according to the present invention is not limited to the method using the magnetron shown here, but may be another type of plasma processing apparatus.
[0035]
Further, in the sample mounting apparatus 103 of the present embodiment shown in FIG. 2, a heater 15 is embedded in the support block 4. In this embodiment, the heater 15 is cast into the support block 4 using a casting technique. As the heater 15, a so-called sheathed heater or the like in which a nichrome wire or a tungsten wire is covered with an insulating material such as alumina and is housed in a stainless steel pipe or a steel pipe is used.
[0036]
Further, in the support block 4, an electrostatic attraction electrode 16 to which a voltage for generating an attraction force based on static electricity with respect to the semiconductor wafer 103 is applied is disposed therein.
[0037]
Further, the support block 4 may have a multilayer structure, and a heater having a film configuration in which a film of, for example, alumina / tungsten / alumina structure is formed with a tungsten film interposed therebetween may be used. A configuration may also be used that also serves as the electrode 16 for generating an attraction force. That is, the support block 4 is provided with an electrode, which comes into contact with the semiconductor wafer 105 to support (adsorbs) the semiconductor wafer 105 and has a temperature adjusting means such as a heater.
[0038]
Next, the operation of the sample mounting device 103 in this embodiment will be described first, starting from the adjustment of the temperature.
[0039]
First, the sample mounting device 103 causes the semiconductor wafer 105 to be attracted by Coulomb force or Johnson-Lambert force generated by applying a high voltage to the electrostatic attraction electrode 16. At this time, there are two types of high voltage application methods, a monopolar type and a bipolar type.
[0040]
The unipolar type is a method for applying a uniform potential between the semiconductor wafer and the dielectric film, and the bipolar type is a method for applying two or more types of potential differences between the dielectric films. May be.
[0041]
After the wafer 105 is adsorbed, as described above, He gas for heat transfer (usually about 1000 kPa) faces the back surface of the semiconductor wafer 105 from the gas introduction hole 7 (the surface of the mounting portion of the sample mounting device 103). (The surface of the wafer) and the surface of the dielectric film 4. The temperature of the semiconductor wafer 105 depends on the amount of heat supplied from the plasma, the heat transmittance of the gap filled with He gas, the thermal resistance of the electrode block 1, and the coolant circulated in the electrode block 1 and the electrode block 1. Affected by the heat transfer rate.
[0042]
Therefore, in order to control the temperature of the semiconductor wafer 105, is it necessary to provide a mechanism for changing the pressure of the He gas with respect to the sample mounting device 103, the temperature of the refrigerant, and the flow rate of the refrigerant (the heat transfer coefficient with the electrode block 1 changes)? Or a second temperature adjusting mechanism such as a heater.
[0043]
For example, according to experiments and studies by the inventors, when the size of the flow channel slits 11 and 12 is 5 mm in width × 15 mm in height, the flow rate of the refrigerant at 20 ° C. is changed from 2 L / min to 4 L / min. If it is doubled, it has been confirmed that the heat transfer rate between the refrigerant and the electrode block 1 is about 200 W / m ² K to about 400 W / m ² K. Accordingly, the heat transfer rate can be increased by increasing the flow rate of the refrigerant, so that even if the amount of heat (heat input) supplied from the plasma increases, the temperature rise of the electrode block 1 can be kept small.
[0044]
When the processing is completed, the semiconductor wafer 105 stops applying the voltage supplied to the electrode 16 of the support block 4 or applies a voltage so that the potential difference is opposite to the previously applied potential difference. After that, the inside of the through hole 21 shown in FIG. 2 is lifted and supported above the sample mounting device 103 by lift pins that move up and down in the direction of the wafer 103. In this state, it is transported to the outside of the vacuum processing chamber 101 while being supported by the arm of the robot 104.
[0045]
As the refrigerant, a liquid or a gas that is generally used to cool such a metal member is used. A part of the refrigerant that has passed through the slit 12, which is a passage through which the refrigerant flows, and has exchanged heat with the member on the outer peripheral side of the sample mounting device 103 partially flows from the discharge unit 12B toward the refrigerant supply unit 52. The other part flows into the space 14 through a communication passage (not shown), and exchanges heat with the member on the central portion side of the sample mounting device 103 in the space 14. When the temperature of the refrigerant is lower than the temperature of the sample mounting device 103 (usually under such conditions), the temperature of the sample mounting device 103 is reduced and cooled by these heat exchanges. In the present embodiment, the space 14 is arranged on the central portion side of the sample mounting device 103 with respect to the slit 12, and the refrigerant is introduced from the outer peripheral portion side of the sample mounting device 103 and discharged from the central portion side.
[0046]
The space 14 can be formed in a spiral shape like the slits 11 and 12 shown in FIGS. 2 and 3, or in a concentric shape as shown in FIG.
[0047]
When the discharge portion 12B of the slit 12 and the introduction portion 11A of the slit 11 are connected by a conduit, the temperature of the refrigerant supplied from the refrigerant supply unit 52 to the slit 12 on the outer peripheral side and then flowing to the central portion of the sample mounting device 103 By making it lower than the refrigerant flowing on the side, the outer peripheral side of the sample mounting device 103 can be cooled more. The refrigerant flowing in the central portion of the sample mounting device 103 exchanges heat by flowing on the outer peripheral portion, and the amount of heat exchange is relatively small, and the cooling amount is relatively small in the central portion of the sample mounting device 103. Becomes smaller. For this reason, with respect to the supply of heat from the plasma or the inner wall surface of the processing chamber 101, the sample mounting device 103 has a distribution in the cooling amount between the central portion and the outer peripheral portion. The temperature distribution on the surface of the semiconductor wafer 105 placed on the semiconductor wafer 103 can be formed by giving an influence from the distribution.
[0048]
To raise (heat) the temperature of the wafer 103, the supply of the coolant to the slits 11 and 12 is stopped, and power is supplied to the heater 15 to heat the support block 4. At this time, the refrigerant is not supplied to the space 14 located between the support block 4 and the electrode block 1 in the refrigerant passage located at the center portion side of the support block 4, so that heat between them is not supplied. Transmission is suppressed. That is, in this case, the space 14 serves as a means for suppressing heat transfer.
[0049]
On the outer peripheral side of the sample mounting device 103, the electrode block 1 and the support block 4 are connected by bolts 6 via a heat transfer member 17, and since heat is transmitted through these, the outer peripheral side of the support block 4 Is made lower than the temperature on the inner peripheral side. As a result, the temperature distribution on the semiconductor wafer 103 is affected, and a temperature distribution is formed in which the central portion is relatively higher than the outer peripheral portion.
[0050]
An adjusting means such as a valve for adjusting the flow of the refrigerant flowing through the passage connecting the slit 12 and the space 14 is provided to adjust the amount of heat exchange by the refrigerant in the space 14 and, consequently, the amount of cooling. You may do so. By doing so, the range in which the temperature of the sample mounting device 103 and its distribution can be adjusted can be increased, and the semiconductor wafer can be more precisely and finely formed. This adjusting means may be connected to the above-mentioned control device so that its operation is adjusted.
[0051]
Note that, although the present embodiment has been described as having a refrigerant flow path for cooling the sample mounting apparatus 103, a temperature range in which the sample mounting apparatus 103 is adjusted by providing a heater together with the refrigerant flow path is provided. Can be widened.
[0052]
FIG. 5 is a diagram illustrating another embodiment of the present invention. In this example, a slit 13 for suppressing heat transfer is provided in the electrode block 1, and a slit 18 serving as a refrigerant passage on the inner peripheral side and a slit 12 serving as a refrigerant passage on the outer peripheral side are connected in series through a conduit 18. The pipe 18 is provided with an electric heater 19.
[0053]
The coolant is supplied from one coolant supply unit 53 to the slits 11 and 12 serving as the coolant passages in the electrode block 1 in common. At this time, the heater 19 is controlled by a power control device (not shown). The temperature is controlled and serves to heat the refrigerant passing through line 18 to a predetermined temperature. Further, a heater similar to such a heater 19 may be provided in a flow path connecting the slit 12 and the space 14.
[0054]
Therefore, according to this embodiment, by adjusting the heating temperature of the refrigerant by the heater 19, the temperature distribution of the semiconductor wafer 105 is changed to a middle-high type in which the central portion (inner peripheral portion) of the wafer becomes higher in temperature than the outer peripheral portion. Temperature distribution or an outer height type temperature distribution in which the outer peripheral portion of the wafer has a higher temperature than the central portion.
[0055]
That is, for example, when the temperature of the semiconductor wafer 105 is set to the medium-high temperature distribution, the refrigerant may be circulated in the direction indicated by the solid line arrow to control the heating temperature of the refrigerant by the heater 19, and conversely, the outside high temperature distribution In this case, the refrigerant may be circulated in the direction (reverse direction) indicated by the dotted arrow.
[0056]
Therefore, according to the present embodiment, the temperature distribution of the semiconductor wafer 105 during the plasma etching can be clearly controlled, and as a result, a uniform temperature can be obtained in the plane of the semiconductor wafer, or a clear state such as a middle-high type or an outer high type can be obtained. The temperature distribution can be controlled arbitrarily, and as a result, the distribution of the reaction product can be offset, and the plasma processing that suppresses the reattachment of the reaction product to the etched surface can be easily handled. This can greatly contribute to an improvement in processing yield.
[0057]
Moreover, according to this modification, only one refrigerant supply unit 53 needs to be installed, so that the configuration of the device can be simplified.
Further, in the case of this embodiment, if the heater 19 is provided in the pipe 18, the space can be effectively used and the heat efficiency is extremely effective.
[0058]
In the present embodiment, the case where the heater 19 is of the electric heating type has been described. However, the present invention may be implemented by using a Peltier element as the heater 19. It can also be cooled.
[0059]
Further, in the present embodiment, the heat transfer member 17 is arranged on the outer peripheral portion of the sample mounting device 103 to form the space 14, but the space 14 is replaced with the heat transfer member 17. Even if a member having relatively low performance is arranged at the central portion of the sample mounting device 103, the heat transfer amount at the central portion of the sample mounting device 103 is suppressed, and the temperature distribution of the semiconductor wafer 105 is reduced. The central part side can be made higher. The heat transfer performance of these heat transfer members can be selected according to the required specification of the temperature distribution of the semiconductor wafer 103 or the sample mounting device 103.
[0060]
Further, although the electrode block 1 is provided with slits 11 and 12 on the outer peripheral side and the inner peripheral side, only the slit 11 on the outer peripheral side or a single coolant channel may be provided. In this case as well, the refrigerant flows through this flow path and then flows into the space 14, but the refrigerant may communicate with the space 14 in the middle of the flow path.
[0061]
Further, a path of a refrigerant different from the path of the refrigerant connected to the slit 11 may be connected to the space 14 so that a refrigerant adjusted to a temperature different from that of the slit 11 flows. Also in this case, the coolant flowing in the space 14 is adjusted to have a higher temperature than that of the slit 11, and the temperature distribution of the sample mounting device 103 or the semiconductor wafer 105 is configured to be higher at the center portion thereof. .
[0062]
As described above, according to each of the above embodiments, the temperature distribution can be formed on the sample mounting device 103 or the semiconductor wafer 105 more widely and more precisely, and the semiconductor wafer can be more finely or uniformly processed. can do.
[0063]
In addition, by arranging the flow path of the refrigerant not between the support block 4 and the electrode block 1 but between them, it is possible to simplify the structure and perform adjustment in a larger temperature range, thereby reducing the cost of the apparatus. can do.
[0064]
【The invention's effect】
As described above, according to the present invention, there is provided a sample mounting apparatus for a vacuum processing apparatus capable of finely processing a sample by adjusting the temperature precisely in a larger range with a simpler structure. be able to.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a plasma processing apparatus to which a sample mounting device of the present invention can be applied.
FIG. 2 is a diagram illustrating details of a sample mounting device.
FIG. 3 is a diagram illustrating a configuration of a refrigerant flow path.
FIG. 4 is a diagram illustrating another example of the configuration of the refrigerant flow path.
FIG. 5 is a diagram for explaining another embodiment of the present invention.
1 electrode block 4 support blocks 11, 12 refrigerant flow path (slit)
14 space (flow path)
DESCRIPTION OF SYMBOLS 15 Heater 16 Electrode 17 Heat conductive member 100 Plasma processing apparatus 101 Vacuum processing chamber 102 Introducing window 103 Sample mounting apparatus 105 Semiconductor wafer 106 Processing gas inlet 108 Magnetron 110 Solenoid coil

Claims (5)

A support block for placing and holding the sample in the vacuum processing chamber,
A sample mounting device for an empty processing device including a coolant flow path therein and an electrode block supporting the support block,
The electrode block supports the support block through a peripheral portion of the electrode block and the support block, and forms a space through which a coolant can flow in a central portion of a sample mounting portion including the electrode block and the support block. A sample mounting device for a vacuum processing device, characterized in that: A support block for placing and holding the sample in the vacuum processing chamber,
A sample mounting device for an empty processing device including a coolant flow path therein and an electrode block supporting the support block,
The electrode block supports the support block through a peripheral portion of the electrode block and the support block, and forms a space through which a coolant can flow in a central portion of a sample mounting portion including the electrode block and the support block. A sample mounting apparatus for a vacuum processing apparatus, wherein an outlet of a coolant channel formed inside the electrode block is connected to the space. A support block for placing and holding the sample in the vacuum processing chamber,
A sample mounting device for an empty processing device including a coolant flow path therein and an electrode block supporting the support block,
The electrode block supports the support block through a peripheral portion of the electrode block and the support block, and forms a space through which a coolant can flow in a central portion of a sample mounting portion including the electrode block and the support block. ,
A sample mounting apparatus for a vacuum processing apparatus, wherein a heater for heating the sample is provided in the support block. A sample mounting apparatus for a vacuum processing apparatus according to any one of claims 1 to 3,
The sample mounting apparatus for a vacuum processing apparatus, wherein the refrigerant flow path includes an outer peripheral side refrigerant flow path formed on an outer peripheral side of the electrode block and an inner peripheral side flow path formed on an inner peripheral side of the electrode block. . A sample mounting apparatus for a vacuum processing apparatus according to any one of claims 1 to 3,
The refrigerant flow path is an outer peripheral side refrigerant flow path formed on the outer peripheral side of the electrode block, an inner peripheral side flow path formed on the inner peripheral side of the electrode block, and an intermediate part between the outer peripheral side flow path and the inner peripheral side flow path. A sample mounting device for a vacuum processing device, comprising a formed heat transfer suppressing member.

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