JP2004243702A - Method for manufacturing alloy layer laminate and method for manufacturing part using the laminate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an alloy layer laminate capable of forming a resistance part having a required resistance value in a wiring pattern formed by etching, and a method for manufacturing a part using the laminate. <P>SOLUTION: The alloy layer laminate 20 wherein a second layer 25 is interposed between a first layer 26 and a third layer 24 is manufactured by subjecting the bonding scheduled surfaces of both of the first layer 26 and third layer 24 to activation treatment, subsequently laminating the second layer 25 on at least one of the first layer 26 and the third layer 24 and bringing the first layer 26 and the third layer 24 into contact with each other so that the second layer 25 becomes inside to superpose these layers 24, 25, 26 one upon another so as to laminate and bond them. A conductive alloy is used in the first layer 26 of the alloy layer laminate 20, a resistant alloy is used in the second layer 25 and a polymer is used in the third layer 24 to manufacture a part adapted to a printed wiring board, an IC package or the like. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention is directed to a first layer made of a metal containing the first element or an alloy containing the first element, a second layer made of an alloy containing the first element and the second element, and a polymer The present invention relates to a method for manufacturing an alloy layer laminate having a third layer and a fourth layer similar to the first layer if necessary, and a method for manufacturing a component using the alloy layer laminate.
[0002]
[Prior art]
In recent years, as electronic devices have become smaller and lighter, the density of mounting substrates has been increasing, and the number of mounted components has been reduced. In such a background, various methods for embedding the mounted components in the substrate itself have been proposed. For example, a printed wiring board having a built-in resistor is formed by plating a Ni-Cr alloy layer serving as a second layer on a copper foil in a predetermined pattern, bonding the Ni-Cr alloy layer to a base material using an adhesive, and etching the copper foil portion. (For example, see Patent Document 1). Further, a method of joining a polymer film and a metal foil via a metal thin film by sputtering or the like is disclosed (for example, see Patent Document 2). Further, a method of joining metal plates without using plating or the like is disclosed (for example, see Patent Document 3).
[0003]
Prior art document information on the present application includes the following.
[0004]
[Patent Document 1]
JP-A-5-41573
[Patent Document 2]
JP-A-1-224184
[Patent Document 3]
JP-A-2002-113811
[0005]
[Problems to be solved by the invention]
The present invention is directed to a first layer made of a metal containing the first element or an alloy containing the first element, a second layer made of an alloy containing the first element and the second element, and a polymer A method for producing an alloy layer laminate having a third layer and a fourth layer similar to the first layer if necessary, and an alloy layer laminate applicable to printed wiring boards, IC packages, and the like. It is an object to provide a method for manufacturing a component.
[0006]
[Means for Solving the Problems]
As a first solution to the above-mentioned problem, a method for manufacturing an alloy layer laminate according to the present invention comprises a first layer made of a metal composed of a first element or an alloy containing a first element, A second layer made of an alloy containing the element No. 2 and a third layer made of a polymer; After laminating the second layer on at least one of the activation treatment surfaces of the layer and the third layer, the first layer and the third layer are laminated and joined so that the second layer is on the inside. . Alternatively, a first layer made of a metal containing the first element or an alloy containing the first element, a second layer made of an alloy containing the first element and the second element, and a first layer made of a polymer And the first layer and the third layer are subjected to an activation treatment on the side to be joined, and the second layer is laminated on the activation treatment surface of the third layer. A fourth layer similar to the first layer is laminated on at least one of the first layer and the second layer, and the first layer and the third layer are arranged such that the second layer and the fourth layer are inside. Were laminated and joined.
[0007]
According to a second aspect of the present invention, there is provided a method for manufacturing an alloy layer laminate according to the present invention, wherein the activation treatment causes a glow discharge to be performed in an inert gas atmosphere, and the first layer and the third layer are formed. Was subjected to a sputter etching process on the surface to be joined. Preferably, the activation treatment and the lamination treatment of the second layer or the fourth layer are performed in the vicinity.
[0008]
According to a third aspect of the present invention, there is provided a method for manufacturing a component, comprising: a first layer made of a metal or an alloy containing the first element; and a third layer made of a polymer. A second layer made of an alloy containing the first element and the second element, or a second layer made of an alloy containing the first element and the second element, A method using an alloy layer stack having a fourth layer similar to the first layer between the second layers was employed. Preferably, at least one location is subjected to an etching process that causes an etching rate difference. Also preferably, a method of forming a resistance portion in at least one place is adopted.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the production method of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing one embodiment of an alloy layer laminate using the manufacturing method of the present invention, in which a second layer 25 is interposed between a third layer 24 and a first layer 26. An example of insertion is shown. FIG. 2 is a schematic cross-sectional view showing another embodiment of the alloy layer laminate using the manufacturing method of the present invention, in which a second layer 25 is provided between a third layer 24 and a first layer 26. And an example in which a fourth layer 27 is interposed.
[0010]
The first layer 26 is a layer made of a metal made of the first element or an alloy containing the first element. Note that the first element is a metal that is solid at room temperature (eg, Al, Cu, Ag, Pt, Au, or the like), and can be appropriately selected and used depending on the use of the alloy layer stack. The material of the first layer 26 is not particularly limited as long as it can produce an alloy layer laminate, and can be appropriately selected and used depending on the use of the alloy layer laminate. For example, a metal that is solid at normal temperature (for example, Al, Cu, Ag, Pt, Au, or the like), an alloy containing at least one of these metals (for example, an alloy specified in JIS), or the like can be used. If the application of the alloy layer laminate is a printed wiring board or the like, as the first layer 26, a metal having excellent conductivity, such as Cu or Al, or a conductive material containing at least one of these metals is used. An excellent alloy or the like can be applied. That is, a copper plate, an aluminum plate, or the like can be used as the first layer 26. As the copper plate, in addition to Cu, oxygen-free copper, tough pitch copper, phosphor bronze, brass, copper beryllium-based alloys (for example, beryllium 2%, the balance being copper alloy), copper-silver-based alloys (for example, , Silver 3-5%, the balance being copper alloy, etc.), aluminum alloys such as 1000 series and 3000 series specified in JIS can be applied in addition to Al.
[0011]
The thickness of the first layer 26 is not particularly limited as long as the alloy layer laminate can be manufactured, and can be appropriately selected and used depending on the use of the alloy layer laminate. The thickness of the first layer 26 is preferably, for example, 1 to 1000 μm. If it is less than 1 μm, it becomes difficult to manufacture the first layer, and if it exceeds 1000 μm, it becomes difficult to manufacture it as an alloy layer laminate. More preferably, it is 10 to 500 μm. The first layer 26 may be a plate material such as an electrolytic foil or a rolled foil, a layer material in which a film material such as plating or vapor deposition is previously laminated on the plate material, or a laminate such as a clad material. May be. For example, a clad material having a two-layer structure made of copper-aluminum is used.
[0012]
The second layer 25 is a layer made of an alloy containing the first element and the second element. The first element is as described above, and the second element is an element that can be alloyed with the first element, and can be appropriately selected and used depending on the use of the alloy layer stack. For example, if the first element is Cu, the second element is Ni, Fe, Mn, or the like. The material of the second layer 25 is not particularly limited as long as it is an alloy capable of producing an alloy layer laminate, and may be appropriately selected depending on the use of the alloy layer laminate. For example, an alloy that is solid at room temperature (for example, an alloy specified in JIS) can be used. If the application of the alloy layer laminate is a printed wiring board or the like, a resistance alloy having a required specific resistance capable of forming a resistance portion in a wiring pattern can be applied. For example, it is 10 to 300 μΩ · cm at 20 ° C. If it is less than 10 μΩ · cm, it will be difficult to obtain a sufficient resistance value, and if it exceeds 300 μΩ · cm, selection of the material of the resistance alloy will be limited. Preferably, it is 30 to 200 μΩ · cm. Examples of the resistance alloy include copper-manganese alloys (for example, 12 to 15% of manganese, 2 to 4% of nickel, and the balance of copper), and copper-nickel alloys (for example, alloys of 55% of copper and 45% of nickel). ), Nickel-chromium alloys (for example, Ni-Cr alloys composed of 80% nickel and 20% chromium, Ni-Cr-Fe alloys, etc.), nickel-phosphorous alloys (for example, phosphorus 1 to 20%, balance nickel Alloy, nickel-boron-phosphorus-based alloy (for example, boron 2%, phosphorus 8 to 16%, the balance being nickel alloy), iron-chromium-based alloy (for example, chromium 20%, aluminum 3%, the balance being iron An Fe-Cr-Al alloy, an iron-nickel alloy (Fe-Ni alloy, Fe-Ni-Cr alloy, or the like), an iron-carbon alloy, or the like can be used. Furthermore, with the recent increase in environmental awareness, the movement to prohibit or suppress the use of environmentally harmful substances has become active. Therefore, it is preferable to select one that does not contain elements such as Cr and Pb as much as possible.
[0013]
The thickness of the second layer 25 is not particularly limited as long as the alloy layer laminate can be manufactured, and can be appropriately selected and used depending on the use of the alloy layer laminate. The thickness of the second layer 25 is preferably, for example, 0.01 to 10 μm. If the thickness is less than 0.01 μm, it is difficult to form the second layer, and it is difficult to realize a stable resistance value. If it exceeds 10 μm, the production time will be too long. More preferably, it is 0.05 to 5 μm. Note that the second layer can be appropriately selected from dry film forming means such as CVD (Chemical Vapor Deposition), sputtering, vacuum deposition, and ion plating depending on the use of the alloy layer laminate.
[0014]
The third layer 24 is a layer made of a polymer. The material of the third layer 24 is not particularly limited as long as it can produce an alloy layer laminate, and can be appropriately selected and used depending on the use of the alloy layer laminate. For example, a mixture of an organic polymer substance such as plastic or a mixture of plastic and powder or fiber can be used. When the alloy layer laminate is applied to a flexible printed board or the like, a polyester such as polyimide, polyetherimide, or polyethylene terephthalate, an aromatic polyamide such as nylon, a liquid crystal polymer, or the like can be used. In addition, by using a thermoplastic resin for the third layer, it is possible to contribute to reduction of environmental load.
[0015]
Examples of plastics include acrylic resins, amino resins (melamine resins, urea resins, benzoguanamine resins, etc.), allyl resins, alkyd resins, urethane resins, liquid crystal polymers, EEA resins (Ethylene Ethylacrylate resins), and AAS resins (Acrylonitrile Acrylate Styrene resins). ), ABS resin (Acrylonitrile Butadiene Styrene resin), ACS resin (Acrylnitrile Chlorinated polystyrene Styrene resin), AS resin (Acrylonitrile Styrene resin), silicon resin, styrene resin, ethylene resin, ethylene polymer , Feno Resin, fluoroethylene propylene, fluorine resin, polyacetal, polyarylate, polyamide (6 nylon, 11 nylon, 12 nylon, 66 nylon, 610 nylon, 612 nylon, etc.), polyamide imide, polyimide, polyether imide, polyether Ether ketone, polyether sulfone, polyester (polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycyclohexynedimer terephthalate, polytrimethylene terephthalate, polytrimethylene naphthalate, etc.), polyolefin (polyethylene, polypropylene, etc.), polycarbonate, Polychlorotrifluoroethylene, polysulfone, polystyrene, polyphenylene sulfide, polybutadiene, polybutene Such as polymethyl pentene may be used.
[0016]
The thickness of the third layer 24 is appropriately selected depending on the use of the alloy layer laminate. For example, it is 1 to 1000 μm. If it is less than 1 μm, it will be difficult to manufacture the third layer, and if it exceeds 1000 μm, it will be difficult to manufacture it as an alloy layer laminate. For example, if the application of the alloy layer laminate is a flexible printed board or the like, the thickness is preferably in the range of 3 to 300 μm. If it is less than 3 μm, the mechanical strength is poor, and if it exceeds 300 μm, the flexibility becomes poor. Preferably, it is 10 to 150 μm. More preferably, it is 20 to 75 μm.
[0017]
The fourth layer 27 is made of the same material as the first layer. The material similar to the first layer may be any material that can be applied to the first layer, and may be the same or different from the first layer, and may be appropriately selected and used depending on the use of the alloy layer laminate. it can. The fourth layer is provided mainly when the first layer and the second layer do not work. In this case, it is desirable that the fourth layer be made of a material having a composition similar to that of the first layer, and of being easily bonded to the second layer. In the case where processing such as etching is performed on the alloy layer laminate, when the first layer and the fourth layer are of the same type and are adjacent to each other, the processing can be performed as one. The thickness of the fourth layer 27 is not particularly limited as long as the alloy layer laminate can be manufactured, and can be appropriately selected and used depending on the use of the alloy layer laminate. The thickness of the fourth layer 27 is preferably, for example, 0.01 to 10 μm. If it is less than 0.01 μm, it is difficult to form the fourth layer, and if it exceeds 10 μm, the production time becomes too long. More preferably, it is 0.05 to 3 μm. The fourth layer can be appropriately selected from dry film forming means such as CVD (Chemical Vapor Deposition), sputtering, vacuum deposition, and ion plating depending on the use of the alloy layer laminate. The means for laminating the second layer and the fourth layer may be the same or different.
[0018]
A method for manufacturing the alloy layer laminate 20 shown in FIG. 1 will be described. As shown in FIG. 4, in the vacuum chamber 52, the activation treatment device 70 activates the bonding surface side of the third layer 24 installed on the rewind reel 62. Similarly, the surface of the first layer 26 to be joined, which is provided on the rewind reel 64, is activated by the activation processing device 80.
[0019]
The activation process is performed as follows. That is, the third layer 24 and the first layer 26 loaded in the vacuum chamber 52 are respectively brought into contact with one electrode A grounded, and 10 1 × 10 ^-3 In a very low-pressure inert gas atmosphere of Pa, an alternating current of 1 to 50 MHz is applied to cause glow discharge, and the third layer 24, the first layer 24, which contacts the electrode A exposed in the plasma generated by the glow discharge, Is sputter-etched so that the area of each of the layers 26 is effectively １ ／ or less of the area of the electrode B. As the inert gas, argon, neon, xenon, krypton, or the like or a mixture containing these can be used. Preferably it is argon. The inert gas pressure is 1 × 10 ^-3 If the pressure is less than Pa, stable glow discharge is difficult to perform, and high-speed etching is difficult. If the pressure exceeds 10 Pa, the activation treatment efficiency is reduced. If the applied alternating current is less than 1 MHz, it is difficult to maintain a stable glow discharge, and it is difficult to perform continuous etching. If the applied alternating current exceeds 50 MHz, oscillation tends to occur and the power supply system becomes complicated, which is not preferable. In addition, for efficient etching, the respective areas of the third layer 24 and the first layer 26 that are in contact with the electrode A need to be effectively smaller than the area of the electrode B. By doing so, etching can be performed with sufficient efficiency.
[0020]
Next, the second layer 25 is formed on the surface of the third layer 24 by the film forming unit 90. A case where sputtering is used as a film formation method will be described. In the film forming unit 90, the sputtering process can be performed by effectively increasing the area on the third layer 24 side contrary to the activation processing device. That is, the third layer 24 loaded in the vacuum chamber 52 is brought into contact with one of the electrodes A grounded to ground, and 10-3 × 10 × 10 ^-3 In a very low pressure inert gas atmosphere of Pa, an alternating current of 1 to 50 MHz is applied to cause glow discharge, and the area of the third layer 24 in contact with the electrode A exposed in the plasma generated by the glow discharge is reduced. Then, the sputtering process is performed so that the area is effectively three times or more the area of the electrode C. As the inert gas, argon, neon, xenon, krypton, or the like or a mixture containing these can be used. Preferably it is argon. The inert gas pressure is 1 × 10 ^-3 If it is less than Pa, it is difficult to perform stable glow discharge, and if it exceeds 10 Pa, the sputtering efficiency is reduced. If the applied alternating current is less than 1 MHz, it is difficult to maintain a stable glow discharge and continuous sputtering is difficult. If the applied alternating current exceeds 50 MHz, oscillation tends to occur and the power supply system becomes complicated, which is not preferable. In addition, for efficient sputtering, the area of the third layer 24 in contact with the electrode A needs to be effectively larger than the area of the electrode C. By setting the area of the third layer 24 to be three times or more, film formation can be performed with sufficient efficiency. It becomes possible.
[0021]
As shown in FIG. 7, for example, a film forming unit 90 using sputtering is composed of a combination of an electrically floating target electrode 94 and a grounded water-cooled electrode roll 72. A target 92 for forming the second layer 25 is provided on the target electrode 94, and a magnet 98 is provided to improve the efficiency of sputtering by a magnetic field. Further, in order to prevent abnormal heating of the target 92, the target electrode 94 can be water-cooled. By applying a high-frequency power source 96 between the target electrode 94 and the electrode roll 72, plasma is generated and ion bombardment is applied to the target 92, and the target material released by this is stacked on the third layer 24 to form a second layer. By forming the second layer 25, the film laminate 22 can be obtained.
[0022]
Thereafter, the activated first layer 26 and the film laminate 22 having the third layer 24 and the second layer 25 formed thereon are laminated and joined. The lamination bonding is achieved by abutting the film lamination material 22 and the first layer 26 such that the surfaces to be bonded are opposed to each other, and performing cold pressing by the superposition pressing unit 60. The lamination bonding at this time can be performed at a low temperature, and it is possible to reduce or eliminate adverse effects such as a structural change and the formation of an alloy layer in the film lamination material 22, the first layer 26, and the bonding portion. When T is the temperature (° C.) of the film laminated material and the first layer, a good pressure contact state can be obtained at 0 ° C. <T <300 ° C. A temperature of 0 ° C. or lower requires a special cooling device, and a temperature of 300 ° C. or higher is not preferable because adverse effects such as structural changes occur. More preferably, 0 ° C <T <200 ° C. More preferably, 0 ° C <T <150 ° C. Further, the rolling reduction R (%) is preferably 0.01% ≦ R ≦ 30%. If it is less than 0.01%, sufficient bonding strength cannot be obtained, and if it exceeds 30%, deformation becomes large, which is not preferable in terms of processing. More preferably, 0.1% ≦ R ≦ 3%. More preferably, 1% <R ≦ 3%.
[0023]
By performing the lamination and joining in this way, the alloy layer laminate 20 having a required layer thickness can be formed, and is wound around the winding roll 66. If necessary, the alloy layer laminate 20 can be cut out to a predetermined size to produce the alloy layer laminate 20 as shown in FIG. The alloy layer laminate 20 manufactured in this manner may be subjected to a heat treatment within a range that does not cause a problem for removing or reducing residual stress, if necessary, or a conductive film material such as solder plating. And the like may be laminated. The alloy layer laminate 20 is obtained by activating the first layer and the second layer previously laminated on the third layer in a state where the film forming unit 90 shown in FIG. 4 is removed or its function is stopped. It can also be manufactured by direct lamination bonding after processing.
[0024]
In addition, as shown in FIG. 5, when a fourth layer 27 is formed by adding a film forming unit 91, a film stack having a structure of a third layer 24-a second layer 25-a fourth layer 27 is formed. The material 22 can be obtained, and by laminating and joining the first layer 26, the alloy layer laminate 21 as shown in FIG. 2 can be manufactured. It is also possible to manufacture a three-layer alloy layer stack 20 as shown in FIG. 1 by suppressing the film forming function of the film forming unit 91 in the apparatus shown in FIG. Further, the film forming unit can be arranged not only on one of the activation processing apparatuses but also on both the activation processing apparatuses as shown in FIG.
[0025]
The film forming unit is preferably in the vicinity of the activation processing device. By arranging the film forming unit in the vicinity of the activation processing device, it is possible to reduce the size of the manufacturing apparatus. For example, as shown in FIGS. 4 to 7, the electrode roll of the activation processing device and the electrode roll of the film forming unit are shared, or the electrode roll of the activation processing device and the film forming unit are shared. , Etc. on the outer periphery of the device. By adopting such a form, integrated processing becomes possible. The vicinity means a range or a state in which the activated first layer surface is inactivated again by adsorption, reaction, or the like, and does not adversely affect the film formation.
[0026]
Note that batch processing can be used for the production of the alloy layer laminate. That is, a plurality of first and third layers cut into a predetermined size in advance in a vacuum chamber are loaded, transported to an activation processing apparatus, and opposed to a surface to be processed at an appropriate position such as vertical or horizontal. Activation or film formation processing is performed by installing or grasping and fixing in a juxtaposed state or the like, and when the device holding the first and third layers also serves as a pressure welding device, activation or film formation processing In a case where the device for holding and holding the first and third layers is later pressed and held while being held or held, and is not used as a pressing device, it is achieved by transferring to a pressing device such as a press device to perform pressing. Note that the activation treatment and the film formation treatment are preferably performed between the first and third layers, which are one electrode A that is insulated and supported, and the other electrode B that is grounded.
[0027]
The component using the manufacturing method of the present invention includes a first layer made of a metal or an alloy containing the first element, and a first layer made of a polymer. A second layer made of an alloy containing the element and the second element, or a second layer made of an alloy containing the first element and the second element, and a fourth layer similar to the first layer. The alloy layer laminate having one or more stages of etching and the like, and further coated or fixed with a resin or the like, or the alloy layer laminate. Examples include a laminate obtained by laminating a laminate or a substrate made of a polymer, a metal, an alloy, or the like using an adhesive or the like, and a substrate subjected to interlayer conduction treatment or the like by via processing or through-hole processing. For example, it is a component such as a printed wiring board as shown in FIG. Further, although not shown, the components shown in FIG. 3 may be used in an overlapping manner, and further, the first layer / the second layer / the third layer / the second layer / the first layer. Alternatively, a two-layer wiring part or a one-layer wiring part may be provided on both surfaces of the third layer.
[0028]
A component such as a printed wiring board as shown in FIG. 3 is, for example, a three-layer alloy layer laminate 20 having a three-layer structure of a third layer 24-a second layer 25-a first layer 26 as shown in FIG. The first layer 26-the second layer 25 are subjected to etching or the like, and the first layer 26-the two-layer wiring portion 32 having the structure of the second layer 25 or one layer of only the second layer 25 is formed. It can be manufactured by forming the wiring portion 34 and the like. At this time, in each wiring portion, a two-layer wiring portion 32 in which the first layer remains and a one-layer wiring portion 34 in which the first layer portion is removed and only the second layer is formed can be appropriately selectively formed. . Further, by appropriately selecting an etchant and the materials of the first layer 26 and the second layer 25, the second layer 25 can function as an etching deceleration layer. This makes it easy to form the one-layer wiring portion 34 of the second layer 25 only.
[0029]
The alloy layer laminate 20 having the three-layer structure has, for example, a three-layer structure of a liquid crystal polymer-Ni.Cu alloy layer-copper foil by using Cu as the first element and Ni as the second element. This can be achieved by, for example, activating the liquid crystal polymer, laminating a Ni.Cu alloy layer by sputtering, and activating the copper foil to laminate and bond. The two-layer wiring part 32 can be formed by sequentially or collectively etching the copper foil and the Ni.Cu alloy layer, and the one-layer wiring part 34 can be formed by etching only the copper foil. . When the copper foil and the Ni—Cu alloy layer are collectively etched, a ferric chloride solution can be used, and when the copper foil is etched, an alkali etching solution can be used. When the etching process is performed using an alkaline etching solution, the etching speed in the Ni-Cu alloy layer can be reduced as compared with the etching speed in the copper foil portion, and thus a substantially selective etching process can be performed. Become. Note that the difference in the etching rate increases as the content of Ni as the second element increases, and thus the etching rate difference can be appropriately selected and used depending on applied processing conditions, use environment, and the like.
[0030]
Note that, in the alloy layer laminate using the manufacturing method of the present invention, when the first layer is a layer excellent in conductivity and the second layer is a layer excellent in electric resistance, only the second layer is used. By forming the wiring portion, it can be used as a resistor portion, and can function as a resistor such as a terminating resistor or a bleeder resistor. Therefore, the embedded resistor of a printed wiring board, a resistor array, a resistor network, It can also be applied as a collective resistance such as a resistance ladder. This resistance value can be manufactured by appropriately selecting the specific resistance and film thickness determined by the material of the second layer, and the width and length of the wiring pattern. Conversely, when it is not desired to function as a resistor, the width of the wiring portion of only the second layer portion is increased to reduce the substantial resistance value, or the first layer is provided on at least one surface of the second layer. This can be achieved by performing an etching process that leaves a layer or by forming a conductive layer on the wiring portion of only the second layer portion by vapor deposition or the like. For this reason, it is possible to reduce or eliminate the resistors that have been mounted on the printed wiring board, which is effective in increasing the density of the printed wiring board.
[0031]
Further, the second layer of the alloy layer laminate using the manufacturing method of the present invention can function not only as a resistor but also as a heating element or a fuse. Since the alloy layer laminate of the present invention has no adhesive layer which is a factor inhibiting heat resistance, it can be used at higher temperatures than before. Therefore, it is suitable for printed wiring boards (rigid printed wiring boards, flexible printed wiring boards, etc.) and the like, and for IC cards, IC packages such as CSP (chip size package or chip scale package) and BGA (ball grid array). Can also be applied.
[0032]
【Example】
Hereinafter, embodiments will be described with reference to the drawings. A liquid crystal polymer having a thickness of 50 μm was used as the third layer 24, a rolled copper foil having a thickness of 35 μm was used as the first layer 26, and a Ni—Cu alloy layer was used as the second layer 25. The liquid crystal polymer and the rolled copper foil were set in the alloy layer laminate manufacturing apparatus 50, and activated by the activation processing units 70 and 80 in the vacuum chamber 52 by sputter etching. The Ni-Cu alloy layer 25 is formed on the activated liquid crystal polymer by a film forming unit 90 using sputtering to form a film laminated material 22, and the activated rolled copper foil is pressed against the film laminated material 22 by a rolling unit 60. To form an alloy layer laminate 20.
[0033]
【The invention's effect】
As described above, according to the method for manufacturing an alloy layer laminate of the present invention, the second layer or the second and fourth layers are interposed between the first layer and the third layer. The method for manufacturing a part according to the present invention is a method using an alloy layer laminate. For this reason, by forming a resistance portion in the second layer of the alloy layer laminate, the number of components forming a circuit can be reduced, and application to a printed wiring board or the like is also suitable.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing an embodiment of an alloy layer laminate using a manufacturing method of the present invention.
FIG. 2 is a schematic cross-sectional view showing another embodiment of the alloy layer laminate using the manufacturing method of the present invention.
FIG. 3 is a schematic cross-sectional view showing one embodiment of a component using the manufacturing method of the present invention.
FIG. 4 is a schematic cross-sectional view showing one embodiment of an apparatus used for the manufacturing method of the present invention.
FIG. 5 is a schematic sectional view showing another embodiment of the apparatus used for the manufacturing method of the present invention.
FIG. 6 is a schematic sectional view showing still another embodiment of the apparatus used in the manufacturing method of the present invention.
FIG. 7 is a schematic sectional view showing one embodiment of a film forming unit used in the manufacturing method of the present invention.
[Explanation of symbols]
20 Alloy layer laminate
21 Alloy layer laminate
22 Film laminated materials
24 Third Layer
25 Second layer
26 First Layer
27 Fourth layer
30 parts
32 2-layer wiring section
34 1-layer wiring section
50 Alloy layer production equipment
52 vacuum chamber
54 vacuum pump
60 Pressure welding unit
62 Rewind reel
64 Rewind reel
66 Take-up roll
70 Activation device
72 electrode roll
74 electrodes
76 electrodes
78 electrodes
80 Activation processing equipment
82 electrode roll
84 electrodes
86 electrodes
90 Film formation unit
91 Film formation unit
92 target
94 Target electrode
95 Film formation unit
96 High frequency power supply
98 magnet
A Electrode A
B electrode B
C electrode C

Claims (7)

A first layer made of a metal containing the first element or an alloy containing the first element; a second layer made of an alloy containing the first element and the second element; And an activation treatment on the side of the first layer and the third layer to be joined, and laminating the second layer on at least one of the activation treatment surfaces of the first layer and the third layer And then laminating and joining the first layer and the third layer such that the second layer is on the inside. A first layer made of a metal containing the first element or an alloy containing the first element; a second layer made of an alloy containing the first element and the second element; And a first layer and a third layer, which are to be joined to each other, are subjected to an activation treatment, and the second layer is laminated on the activation treatment surface of the third layer. Alternatively, a fourth layer similar to the first layer is stacked on at least one of the second layers, and the first layer and the third layer are stacked such that the second layer and the fourth layer are inside. A method for producing an alloy layer laminate, comprising joining. 3. The method according to claim 1, wherein, in the activation processing, a glow discharge is performed in an inert gas atmosphere to perform sputter etching on a surface of the first layer and the third layer to be bonded. 3. A manufacturing method of the alloy layer laminate according to the above. The method for manufacturing an alloy layer laminate according to any one of claims 1 to 3, wherein the activation treatment and the lamination treatment of the second layer or the fourth layer are performed in the vicinity. An alloy comprising a first element and an alloy containing a second element is provided between a first layer comprising a metal comprising the first element or an alloy comprising the first element and a third layer comprising a polymer. A second layer, or a second layer made of an alloy containing the first element and the second element, and a fourth layer similar to the first layer between the first layer and the second layer. A method for producing a component, comprising using an alloy layer laminate having the same. The method for manufacturing a component according to claim 5, wherein an etching process that causes an etching rate difference is performed on at least one portion. The method for manufacturing a component according to claim 5, wherein a resistance portion is formed in at least one place.

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