JP2004119591A - Substrate processing equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing equipment which is capable of reducing consumption of an organic solvent and efficiently evaporating droplets of the organic solvent on the surface of a substrate. <P>SOLUTION: Pure water is discharged out of a processing tank 20 as nitrogen gas is supplied from a first supply nozzle 40 and a second supply nozzle 50 after the substrate W is cleaned in the processing tank 20. IPA vapor (organic solvent vapor) is spouted out from the first supply nozzle 40 so as to form a flow area AI of IPA vapor, the substrate W is made to pass through the flow area AI, and the IPA is condensed on the surface of the substrate W. Thereafter, gas spouted out from the first supply nozzle 40 is switched from the IPA vapor to nitrogen gas (inert gas), a flow area of nitrogen gas is formed at the same position with the flow area AI, and the substrate W is made to pass through the flow area of nitrogen gas so as to be dried out by vaporizing droplets of IPA condensed on the surface of the substrate W. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention provides a substrate treatment for drying a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, and the like (hereinafter, simply referred to as a “substrate”) that have been subjected to a cleaning treatment with pure water. About technology.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, in a substrate manufacturing process, after a treatment with a chemical solution such as hydrofluoric acid and a cleaning treatment with pure water are sequentially performed, isopropyl alcohol (hereinafter, referred to as “IPA”) and the like are pulled out from the pure water. 2. Description of the Related Art A substrate processing apparatus that supplies a vapor of an organic solvent to a periphery of a substrate to perform a drying process is used. In particular, in recent years, where the structure of a pattern formed on a substrate is becoming more complicated and finer, a pull-drying method of pulling a substrate from pure water while supplying IPA vapor is becoming mainstream.
[0003]
As shown in FIG. 9, the conventional lift-drying type substrate processing apparatus accommodates a processing tank 92 for performing a cleaning process with pure water in a container 90. After the cleaning process of the substrate W in the processing tank 92 is completed, the substrate W is lifted out of the processing tank 92 by the elevating mechanism 93 while supplying nitrogen gas into the container 90, and then, as shown by an arrow FI9 in FIG. IPA vapor is discharged from 91. Thereby, the inside of the container 90 is filled with the IPA vapor, and the IPA is condensed on the substrate W and is vaporized, so that the substrate W is dried (for example, see Patent Document 1). .
[0004]
[Patent Document 1]
JP-A-62-198126
[0005]
[Problems to be solved by the invention]
However, in the above-mentioned substrate processing apparatus of the lifting and drying system, it is necessary to supply the IPA vapor to the entire container 90, and it cannot be said that the IPA vapor is efficiently supplied to the substrate W. There is a problem of high consumption.
[0006]
Further, there is a problem that it takes a long time to evaporate the IPA droplet condensed on the substrate W, and poor drying occurs due to the IPA droplet remaining on the surface of the substrate W. In particular, this problem is more remarkable for a large-diameter substrate.
[0007]
The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus capable of reducing the consumption of an organic solvent and efficiently vaporizing the organic solvent droplets on the substrate surface.
[0008]
[Means for Solving the Problems]
In order to solve the above problem, the invention according to claim 1 is a substrate processing apparatus for performing a cleaning process and a drying process of a substrate, wherein the cleaning process is performed by storing pure water and immersing the substrate in the pure water. A processing tank to be performed, a container that stores the processing tank, and a drainage unit that drains pure water stored in the processing tank while the substrate is held in the processing tank; and Means for forming a gas flow area of the organic solvent by discharging vapor of the organic solvent to a part thereof, and forming a gas flow area of the inert gas by discharging an inert gas to a part of the container. An elevating means for elevating and lowering the substrate in the container, and washing the substrate with pure water in the processing tank, and then moving the substrate by the elevating means so that an organic solvent gas stream and an inert gas stream are formed. And control means for passing the control signal.
[0009]
The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the airflow region forming unit is configured to remove the organic solvent after the drainage of the pure water from the processing tank is completed. The discharge of the vapor is started to form a gas flow region of the organic solvent.
[0010]
The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, further comprising inert gas inflow means for flowing an inert gas into the processing bath, The drain means drains pure water from the processing tank while the inert gas flows into the processing tank by the gas inflow means.
[0011]
The invention according to claim 4 is the substrate processing apparatus according to any one of claims 1 to 3, wherein the airflow region forming unit includes a gas discharge unit opened in the container, Discharge switching means for switching the gas discharged from the gas discharge portion between the vapor of the organic solvent and the inert gas, wherein the control means raises the substrate by the elevating means, and controls a predetermined position in the container. After passing through the gas flow region of the organic solvent formed in the region, the discharge switching means is switched to the inert gas side to form a gas flow region of the inert gas in the region, and the substrate is lowered by the lifting / lowering means. Through an inert gas stream.
[0012]
The invention according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 4, further comprising a decompression means for decompressing the inside of the container, wherein the substrate is made of an inert gas. After passing through the basin, the pressure reducing means reduces the pressure in the container while continuing to discharge the inert gas from the airflow area forming means.
[0013]
The invention according to claim 6 is the substrate processing apparatus according to claim 5, wherein the decompression unit decompresses the inside of the container while the substrate is located below an inert gas flow region. I do.
[0014]
The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 6, wherein the inert gas supplied to the airflow region forming means and the inert gas inflow means is heated. Gas heating means to generate hot gas with high temperature
Is further provided.
[0015]
The invention according to claim 8 is the substrate processing apparatus according to any one of claims 1 to 7, wherein the vapor of the organic solvent is a vapor of isopropyl alcohol.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described.
[0017]
<Main components of substrate processing equipment>
FIG. 1 is a front view of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view as viewed from a position II-II in FIG. FIG. 1 and the following drawings are appropriately provided with an XYZ orthogonal coordinate system in which the XY plane is a horizontal plane and the Z-axis direction is a vertical direction in order to clarify the directional relationship.
[0018]
The substrate processing apparatus 1 is an apparatus for drying a substrate W, which has been subjected to a cleaning process with pure water, using IPA, which is an organic solvent, and mainly includes a container 10, a processing tank 20, an elevating mechanism 30, a first A supply nozzle 40 and a second supply nozzle 50 are provided.
[0019]
The treatment tank 20 is a tank that stores a chemical solution such as hydrofluoric acid or pure water (hereinafter, these are collectively referred to as a “treatment solution”) and sequentially performs a surface treatment on the substrate W. Is housed in A processing liquid discharge nozzle (not shown) is disposed near the bottom of the processing tank 20, and a processing liquid can be supplied into the processing tank 20 from a processing liquid supply source (not shown) via the processing liquid discharge nozzle. it can. The processing liquid is supplied from the bottom of the processing bath 20 and overflows from the overflow surface, that is, the opening 20P of the processing bath 20. In the processing tank 20, the processing liquid stored in the processing tank 20 can be discharged by opening a drain valve 47 (see FIG. 3) described later.
[0020]
The container 10 is a housing that houses therein the processing tank 20, the elevating mechanism 30, the first supply nozzle 40, the second supply nozzle 50, and the like. The upper part 11 of the container 10 can be opened and closed by a slide type opening / closing mechanism 12 conceptually illustrated (the following opening / closing mechanism 12 is omitted in FIGS. 2 to 8). When the upper portion 11 of the container 10 is open, the substrate W can be loaded and unloaded from the open portion. On the other hand, when the upper part 11 of the container 10 is closed, the inside thereof can be a closed space.
[0021]
The elevating mechanism 30 is a mechanism for immersing a set of a plurality of substrates W (lots) in the processing liquid stored in the processing tank 20. The lifting mechanism 30 includes a lifter 31, a lifter arm 32, and three holding rods 33, 34, and 35 for holding the substrate W. Each of the three holding rods 33, 34, 35 is provided with a plurality of holding grooves, into which the outer edge of the substrate W fits and holds the substrate W in an upright posture, arranged at predetermined intervals in the X direction. I have. Each holding groove is a notch-shaped groove. The three holding rods 33, 34, 35 are fixed to the lifter arm 32, and the lifter arm 32 is provided so as to be able to move up and down in the vertical direction (Z direction) by the lifter 31.
[0022]
With such a configuration, the elevating mechanism 30 moves the plurality of substrates W, which are arranged and held in parallel with each other in the X direction by the three holding rods 33, 34, and 35, to the processing liquid stored in the processing tank 20. It is possible to move up and down along the path PT between a position to be immersed (solid line position in FIG. 1) and a position pulled up from the processing liquid (virtual line position in FIG. 1). The lifter 31 may employ various known mechanisms such as a feed screw mechanism using a ball screw and a belt mechanism using a pulley or a belt as a mechanism for moving the lifter arm 32 up and down.
[0023]
The substrate W can be transferred between the substrate transport robot outside the apparatus and the elevating mechanism 30 by positioning the elevating mechanism 30 at the virtual line position in FIG. 1 and opening the upper part 11 of the container 10. .
[0024]
Outside the processing tank 20, two first supply nozzles 40 are provided near the opening 20P. The two first supply nozzles 40 are provided on both sides of the plurality of substrates W that are raised and lowered by the lifting mechanism 30. Each of the first supply nozzles 40 is a hollow tubular member extending along the X direction, and includes a plurality of discharge holes 41 arranged at equal intervals in the X direction. Each of the plurality of discharge holes 41 is formed so as to direct the discharge direction parallel to the overflow surface. Then, each of the first supply nozzles 40 discharges IPA vapor or a nitrogen gas which is an inert gas in a horizontal direction (Y direction) from the plurality of discharge holes 41, and is disposed above the processing tank 20 and the substrate W. Functions as an airflow area forming means for forming an airflow area of IPA vapor or nitrogen gas in a region intersecting with the ascending and descending path PT.
[0025]
Further, two second supply nozzles 50 are provided inside the container 10 and outside and above the upper end of the processing tank 20. The two second supply nozzles 50 are provided below the first supply nozzle 40, respectively. Each of the second supply nozzles 50 is a hollow tubular member extending along the X direction, and includes a plurality of discharge holes 51 arranged at equal intervals in the X direction. Each of the plurality of discharge holes 51 is formed obliquely downward so as to direct the discharge direction to the opening 20 </ b> P of the processing tank 20. Then, each of the second supply nozzles 50 discharges a nitrogen gas, which is an inert gas, from the plurality of discharge holes 51 toward the opening 20P of the processing tank 20, and flows the nitrogen gas into the processing tank 20. It functions as an inert gas inflow means.
[0026]
The first supply nozzle 40 and the second supply nozzle 50 can be supplied with IPA vapor, nitrogen gas or the like from a supply mechanism outside the container 10. FIG. 3 is a schematic diagram illustrating a configuration of a pipe or the like of the substrate processing apparatus 1.
[0027]
The first supply nozzle 40 is connected to an IPA supply source 42 and a nitrogen gas supply source 44 via a pipe. By opening the IPA valve 43, IPA vapor can be supplied from the IPA supply source 42 to the first supply nozzle 40. The IPA vapor supplied to the first supply nozzle 40 is discharged from each of the plurality of discharge holes 41 while forming a flow parallel to the main surface of the substrate W in the horizontal direction.
[0028]
Further, by opening the nitrogen gas valve 46, the nitrogen gas can be supplied from the nitrogen gas supply source 44 to the first supply nozzle 40. The nitrogen gas supplied to the first supply nozzle 40 is discharged from each of the plurality of discharge holes 41 in a horizontal direction so as to form a flow parallel to the main surface of the substrate W.
[0029]
That is, if the nitrogen gas valve 46 is closed and the IPA valve 43 is opened, the IPA vapor can be supplied from the first supply nozzle 40 in parallel with the overflow surface of the processing tank 20, and conversely, the IPA valve 43 is closed and the nitrogen gas is supplied. If the gas valve 46 is opened, nitrogen gas can be supplied in parallel with the overflow surface of the processing tank 20.
[0030]
The second supply nozzle 50 is connected to the nitrogen gas supply source 44 via a pipe. By opening the nitrogen gas valve 45, the nitrogen gas can be supplied from the nitrogen gas supply source 44 to the second supply nozzle 50. The nitrogen gas supplied to the second supply nozzle 50 is discharged from each of the plurality of discharge holes 51 toward the opening 20P of the processing bath 20 while forming a flow parallel to the main surface of the substrate W.
[0031]
The bottom of the processing tank 20 and a drain line outside the apparatus are connected via a pipe, and a drain valve 47 is inserted into the pipe. When the drain valve 47 is opened, the processing liquid in the processing tank 20 is quickly discharged from the bottom of the processing tank 20.
[0032]
The inside of the container 10 and an exhaust line outside the apparatus are connected via a pipe, and an exhaust valve 48 and an exhaust (decompression) pump 49 are inserted into the pipe. By opening the exhaust valve 48 and driving the exhaust pump 49, the atmosphere in the container 10 is exhausted.
[0033]
The operation of the IPA valve 43, the nitrogen gas valves 45 and 46, the drain valve 47, the exhaust valve 48, and the exhaust pump 49 shown in FIG. The control unit 60 and the drain valve 47 function as a drain unit. Further, the control unit 60, the IPA valve 43, and the nitrogen gas valve 46 function as a discharge switching unit of the first supply nozzle.
[0034]
<Drying process in substrate processing apparatus 1>
FIG. 4 is a flowchart illustrating the operation of the substrate processing in the substrate processing apparatus 1. FIGS. 5 to 8 are views for explaining the state of processing in the substrate processing apparatus 1. FIG. Hereinafter, the processing procedure of the substrate processing apparatus 1 will be described with reference to FIGS.
[0035]
When processing a substrate W in the substrate processing apparatus 1 described above, first, the elevating mechanism 30 receives a plurality of substrates W from a substrate transport robot (not shown). Then, the elevating mechanism 30 lowers the plurality of substrates W which are collectively held at intervals in the X direction, the container 10 is sealed, and the processing is performed from the opening 20 </ b> P for carrying the substrates W into the processing tank 20. It is immersed in pure water stored in the tank 20 (Step S1). At this stage, pure water continues to be supplied to the processing tank 20, and the pure water continues to overflow from the overflow surface at the upper end of the processing tank 20. The pure water overflowing from the processing tank 20 is collected by a collecting unit provided outside the upper end of the processing tank 20, and is discharged to a drain line outside the apparatus.
[0036]
In step S2, a cleaning process of the substrate W is performed. Here, while maintaining a state in which the plurality of substrates W are immersed in the pure water stored in the processing tank 20, a chemical solution or pure water is sequentially supplied to the processing tank 20 to perform etching and cleaning processing in a predetermined order. (The state shown in FIG. 5). Also at this stage, the chemical solution or the pure water continues to overflow from the upper end of the processing tank 20, and the overflowing processing solution is collected by the above-mentioned recovery unit.
[0037]
In the state of FIG. 5, nitrogen gas is horizontally discharged from the first supply nozzle 40 as shown by an arrow FN41 in FIG. 5, and nitrogen gas is discharged from the second supply nozzle 50 as shown by an arrow FN42 in FIG. The gas is discharged toward the opening 20P of the processing tank 20. Thereby, the inside of the container 10 becomes a nitrogen atmosphere, and the processing of the substrate W proceeds in the nitrogen atmosphere.
[0038]
When the surface treatment on the substrate W proceeds, a final finish cleaning process is eventually performed. In the present embodiment, the finish cleaning process is also performed by storing pure water in the processing tank 20 and immersing a plurality of substrates W in the pure water, similarly to the normal cleaning process. Note that the supply of nitrogen gas is also performed at the stage of the final finish cleaning process, the nitrogen gas is discharged from the first supply nozzle 40 and the second supply nozzle 50, and the finish cleaning process is performed in a nitrogen atmosphere. .
[0039]
In step S3, the pure water stored in the processing tank 20 is drained. That is, when the cleaning process of the substrate W in the processing tank 20 (Step S2) is completed, as shown in FIG. 6, while keeping the substrate W in the processing tank 20, pure water stored in the processing tank 20 is removed. Drain. Also in this case, the nitrogen gas is horizontally discharged from the first supply nozzle 40 as shown by an arrow FN51 in FIG. 6, and the nitrogen gas is discharged from the processing tank 20 from the second supply nozzle 50 as shown by an arrow FN52 in FIG. By discharging the gas toward the opening 20P, the nitrogen gas flows into the processing tank 20. Thereby, the substrate W exposed from the pure water is covered with the nitrogen atmosphere, and the generation of the watermark on the surface of the substrate W can be prevented.
[0040]
Further, when the substrate W is drained while holding the substrate W in the processing tank 20 as described above, and the interface (water surface) in the processing tank 20 is lowered to expose the substrate W to the atmosphere in the container 10, In contrast to the case where the substrate W is exposed by pulling up the substrate W from pure water, the substrate W is not shaken (vibrated) due to the pulling up. Redeposition can be effectively prevented. In particular, when it is desired to increase the exposure speed of the substrate W to the atmosphere, a method of holding and draining the substrate W is effective.
[0041]
In step S4, an airflow region AI of the IPA vapor is formed. That is, after the drainage in the processing tank 20 (step S3) is completed, the IPA vapor is discharged from the first supply nozzle 40 in a substantially horizontal direction above the processing tank 20 (arrow FI in FIG. 7), and An airflow region AI of IPA vapor (a virtual line portion in FIG. 7) is formed in a partial region of the internal space. The gas flow area AI of the IPA vapor is a zone of the IPA vapor having a flow rate of a certain value or more in the discharge direction of the discharge hole 41 in the vicinity of the first supply nozzle 40. The second supply nozzle 50 continuously supplies the nitrogen gas flow FN62 into the processing tank 20.
[0042]
In step S5, the substrate W passes through the airflow area AI of the IPA vapor. That is, the elevating mechanism 30 is driven in the ascending direction (the direction of the arrow DW1 in FIG. 7), and the plurality of substrates W spaced apart from each other are collectively lifted from the processing tank 20. Here, as shown in FIG. 7, the plurality of substrates W pass from the bottom to the top in the airflow region AI of the IPA vapor formed locally in the container 10 by the first supply nozzle 40. In the airflow region AI of the IPA vapor formed on a part of the path PT (see FIG. 1), the IPA vapor is directly blown onto the substrate W. In this case, a single gas, that is, only IPA, not the mixed gas, acts on the substrate W exposed to the nitrogen gas, and the entire surface of the substrate W is covered with the IPA.
[0043]
Since the substrate W passes through the airflow region AI in this manner, the IPA vapor can be efficiently supplied to the substrate W, so that the consumption of the IPA vapor can be reduced. That is, since the IPA vapor is mainly supplied to a part of the space in the container 10, the consumption of the IPA can be significantly reduced as compared with the conventional method of supplying the IPA vapor to the entire container 10. .
[0044]
In step S6, a gas flow area AN of nitrogen gas is formed. That is, when the substrate W finishes passing through the gas flow area AI of the IPA vapor, after the supply of the IPA vapor from the first supply nozzle 40 for a certain period of time, the nitrogen gas is supplied from the first supply nozzle 40 instead of the IPA vapor. The gas is discharged in the horizontal direction (arrow FN71 in FIG. 8) to form a gas flow area AN of nitrogen gas (virtual line portion in FIG. 8). This gas flow area AN of the nitrogen gas is substantially the same as the area where the gas flow area AI of the IPA vapor was present (that is, the area which substantially overlaps). As described above, below the substrate W and above the processing bath 20, the gas flow area AN of the nitrogen gas having a flow rate of a certain value or more in the discharge direction of the discharge hole 41 is formed. At this time, the nitrogen gas flow FN72 is also continuously supplied from the second supply nozzle 50 into the processing tank 20.
[0045]
In step S7, the substrate W passes through the gas flow area AN of the nitrogen gas. That is, the elevating mechanism 30 is driven in the descending direction (the direction of the arrow DW2 in FIG. 8), and the plurality of substrates W spaced apart from each other are collectively lowered into the processing bath 20 again. Here, as shown in FIG. 8, the plurality of substrates W pass from top to bottom in the airflow region AN formed locally in the container 10 by the first supply nozzle 40. In the nitrogen gas airflow region AN formed on a part of the path PT (see FIG. 1), the nitrogen gas is directly blown onto the substrate W, and the IPA droplet condensed on the surfaces of the plurality of substrates W Will be vaporized.
[0046]
Since the substrate W passes through the airflow region AN in this way, the droplets of IPA condensed on the surface of the substrate W are efficiently vaporized, thereby shortening the drying time and reducing drying defects due to residual IPA on the surface of the substrate W. can do.
[0047]
In step S8, a decompression process is performed. That is, after the substrate W is pulled down to below the gas flow area AN of the nitrogen gas, the exhaust pump 49 is driven while supplying the nitrogen gas from the first supply nozzle 40 and the second supply nozzle 50 to store the IPA vapor in the container. 10 Exhaust to the outside. At this time, if the total supply flow rate of the nitrogen gas from the first supply nozzle 40 and the second supply nozzle 50 is made smaller than the exhaust flow rate by the exhaust pump 49, the inside of the container 10 is replaced with a nitrogen gas atmosphere. The boiling point of the IPA adhering to the surface of the substrate W decreases, and the IPA evaporates rapidly. Therefore, drying under reduced pressure by so-called IPA is performed, and the vaporization of IPA droplets remaining on the surface of the substrate W is further promoted.
[0048]
Here, by reducing the pressure in the container 10 while the substrate W is positioned below the gas flow area AN of the nitrogen gas, even if the droplets of the organic solvent remaining in the container 10 and condensed by the reduced pressure fall. , And is blocked by the inert gas flow area AN and does not reach the vicinity of the substrate W. Therefore, it is possible to prevent the droplets of the organic solvent condensed by the reduced pressure at this stage from newly adhering to the surface of the substrate W.
[0049]
When the drying under reduced pressure is completed, the operation of the exhaust pump 49 is stopped while the supply of the nitrogen gas is continued. Thereby, the inside of the container 10 is filled with the nitrogen gas atmosphere, and the pressure is restored to the atmospheric pressure. After returning to the atmospheric pressure, the supply of the nitrogen gas from the first supply nozzle and the second supply nozzle 50 is stopped.
[0050]
In step S9, the substrate W is lifted. That is, the substrate W is lifted by the lifting mechanism 30, and when the substrate W reaches the imaginary line position in FIG. 1, the lifting mechanism 30 stops, and the lifting of the substrate W is completed. Then, the substrate W is transferred to the substrate transfer robot, and a series of processes is completed.
[0051]
By the operation of the substrate processing apparatus 1 described above, the substrate W passes through the gas flow area AI of the IPA vapor, and the IPA vapor is directly supplied to the substrate W. Therefore, the supply amount of the IPA can be reduced, and the drying efficiency is improved. I do. Further, since the nitrogen gas is directly supplied to the substrate W by the substrate W passing through the gas flow area AN of the nitrogen gas thereafter, the droplets of IPA condensed on the surface of the substrate W can be efficiently vaporized. it can.
[0052]
<Modification>
In the above-described embodiment, a heater is provided in the middle of a pipe led from the nitrogen gas supply source 44, and the high-temperature nitrogen gas heated by operating the heater is supplied to the first supply nozzle 40 or the second supply nozzle. 50 may be supplied.
[0053]
【The invention's effect】
As described above, according to the first to eighth aspects of the present invention, the substrate after the cleaning process is passed in the order of the organic solvent gas flow area and the inert gas gas flow area. The amount can be reduced, and the droplets of the organic solvent condensed on the substrate surface after being replaced with moisture can be efficiently vaporized. Further, poor drying due to droplets of the organic solvent remaining on the substrate surface can be reduced.
[0054]
According to the invention as set forth in claim 2, by starting the discharge of the vapor of the organic solvent after the drainage of the pure water in the processing tank is completed, the dissolution of the organic solvent in the pure water in the processing tank is suppressed. Therefore, the concentration of the organic solvent in the wastewater can be reduced, and the cost of the wastewater treatment can be reduced.
[0055]
According to the third aspect of the present invention, the substrate exposed from the pure water is covered with the nitrogen atmosphere to drain the pure water in the processing tank while flowing the inert gas into the processing tank. , The occurrence of a watermark can be suppressed.
[0056]
According to the invention described in claim 4, the airflow region forming means can reduce the number of discharge portions if the same gas discharge portion is switched to discharge the vapor of the organic solvent and the inert gas. Therefore, the structure of the entire substrate processing apparatus can be simplified.
[0057]
According to the invention as set forth in claim 5, after the substrate passes in the order of the organic solvent vapor stream and the inert gas stream, the inside of the container is decompressed while continuing the discharge of the inert gas. Thereby, the pressure of the organic solvent remaining in the container can be reduced while replacing the atmosphere with the inert gas, the boiling point of the organic solvent attached to the substrate is reduced, and the vaporization of the organic solvent can be further promoted. .
[0058]
According to the invention as set forth in claim 6, the pressure of the inside of the container is reduced in a state where the substrate is located below the gas flow region of the inert gas, so that the liquid of the organic solvent remaining in the container and condensed by the reduced pressure. Even if the droplet drops, it is blocked by the inert gas stream and does not reach the vicinity of the substrate. Therefore, it is possible to suppress the droplet of the organic solvent condensed by the reduced pressure from adhering to the substrate surface.
[0059]
According to the seventh aspect of the present invention, since the high-temperature inert gas is generated and supplied, the droplets of the organic solvent condensed on the substrate surface can be more efficiently vaporized.
[0060]
According to the invention described in claim 8, since the vapor of the organic solvent is the vapor of isopropyl alcohol, the substrate can be efficiently dried.
[Brief description of the drawings]
FIG. 1 is a front view of a substrate processing apparatus 1 according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view as viewed from a II-II position in FIG.
FIG. 3 is a schematic diagram illustrating a configuration of a pipe and the like of the substrate processing apparatus 1.
FIG. 4 is a flowchart illustrating an operation of substrate processing in the substrate processing apparatus 1.
FIG. 5 is a diagram illustrating a state of processing in the substrate processing apparatus 1.
FIG. 6 is a diagram illustrating a state of processing in the substrate processing apparatus 1.
FIG. 7 is a diagram illustrating a state of processing in the substrate processing apparatus 1.
FIG. 8 is a diagram illustrating a state of processing in the substrate processing apparatus 1.
FIG. 9 is a diagram illustrating a state of a substrate drying process according to a conventional example.
[Explanation of symbols]
1 Substrate processing equipment
10 container
20 treatment tank
30 lifting mechanism
40 First supply nozzle
50 Second supply nozzle
Air flow area of AI IPA vapor (air flow area of organic solvent)
AN Nitrogen gas stream (inert gas stream)
W substrate

Claims (8)

A substrate processing apparatus for performing a substrate cleaning process and a drying process,
A treatment tank for storing pure water and immersing the substrate in the pure water to perform a cleaning process;
A container for housing the processing tank,
In a state where the substrate is held in the processing tank, drainage means for draining pure water stored in the processing tank,
The vapor of the organic solvent is discharged to a part of the container to form a gas flow region of the organic solvent, and the inert gas is discharged to a part of the container to form a gas flow region of the inert gas. Airflow area forming means;
Elevating means for elevating the substrate in the container,
After cleaning the substrate with pure water in the processing tank, the elevating means moves the substrate and controls the gas flow area of the organic solvent and the gas flow area of the inert gas. Substrate processing equipment. The substrate processing apparatus according to claim 1,
The airflow region forming means,
A substrate processing apparatus, wherein after the drainage of the pure water from the processing tank by the drainage unit is completed, the discharge of the vapor of the organic solvent is started to form a gas flow region of the organic solvent. The substrate processing apparatus according to claim 1 or 2, wherein:
Further provided is an inert gas inflow means for flowing an inert gas into the processing tank,
A substrate processing apparatus, wherein the drainage unit drains pure water from the processing tank while the inert gas flows into the processing tank by the inert gas inflow unit. The substrate processing apparatus according to any one of claims 1 to 3, wherein
The airflow region forming means,
A gas discharge unit opened in the container,
A gas to be discharged from the gas discharge unit, comprising discharge switching means for switching between a vapor of an organic solvent and an inert gas,
The control means includes:
After the substrate is raised by the elevating means and passed through the gas flow area of the organic solvent formed in a predetermined area in the container, the discharge switching means is switched to the inert gas side to be inactive in the area. A substrate processing apparatus, wherein a gas flow area is formed, and the substrate is lowered by the elevating means so as to pass through a gas flow area of an inert gas. The substrate processing apparatus according to any one of claims 1 to 4, wherein
The container further includes a decompression unit that decompresses the inside of the container,
The substrate processing apparatus, wherein after the substrate has passed through the gas flow area of the inert gas, the pressure reducing means reduces the pressure in the container while continuously discharging the inert gas from the gas flow area forming means. . The substrate processing apparatus according to claim 5, wherein
The decompression means,
A substrate processing apparatus, wherein the pressure in the container is reduced in a state where the substrate is located below an inert gas flow region. The substrate processing apparatus according to any one of claims 1 to 6, wherein
The substrate processing apparatus further includes an inert gas heating unit configured to heat the inert gas supplied to the airflow region forming unit and the inert gas inflow unit to generate a high-temperature inert gas. The substrate processing apparatus according to any one of claims 1 to 7, wherein
The substrate processing apparatus, wherein the vapor of the organic solvent is a vapor of isopropyl alcohol.

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