JP2004100001A - Deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a deposition system in which the spouting states of gases from each of nozzles of a gas spouting head is optimized. <P>SOLUTION: The gas spouting head 7 is provided with many spouting sections 9 respectively for independently spouting the treating gases to a head surface 8 facing a treated object 5 side. The head 7 comprises flow passage members 10A, 11B and 12C respectively having introducing side flow passages 16A, 17A and 18C for each of treating gases and existing so as to correspond to each of the treating gases. The respective flow passage members have laminated structures that the members are separated in a direction substantially along the head surface 8. The members are so constituted that the treating gases are supplied to the nozzles corresponding to the respective treating gases from the nozzle side flow passages 19A, 20B and 21C of the members 10A, 11B and 12C. As a result, each of the treating gases is jetted through the independent flow passages to the treated object 5 and the films having good quality are formed. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a film forming apparatus that supplies a plurality of types of processing gases into a processing space and forms a film on a surface of an object to be processed using the processing gases.
[0002]
[Prior art]
Various types of film forming apparatuses of this type are known, but as a prior art that seems to be closest to the present invention, a “shower head structure and a processing apparatus of a processing apparatus” disclosed in Patent Literature 1 below is described. Gas supply method ". Hereinafter, the prior art shown in FIGS. 9 and 10 will be described.
[0003]
A processing gas is ejected from a shower head main body 61 attached to the processing container 60 in a vacuum state, and the processing gas is sprayed on the surface of the semiconductor wafer W disposed in the processing container 60, and an insulating oxide film is formed on the surface. And a metal film for wiring are formed. A column 62 is provided at the bottom of the processing container 60, and a mounting table 63 is coupled thereon. The semiconductor wafer W is mounted on the mounting table 63. Further, the mounting table 63 is heated by a heating lamp 64 disposed below the processing container 60 through a transmission window 65 made of quartz glass to maintain the semiconductor wafer W at a predetermined temperature suitable for the processing. .
[0004]
The shower head main body 61 is formed by integrating an upper block 66, a middle block 67, and a lower block 68 made of a thick plate material. Each block is provided with a source gas supply path 69 and a reducing gas supply path 70. ing. FIG. 10 shows, in the form of an exploded view, a state in which these supply paths 69 and 70 are branched. The raw material gas supply path 69 branches into two branches in the upper block 66 to form branch paths 69A and 69A, and further branches into two branches in the middle block 67 to form four convenient branch paths 69B. In the lower block 68, four gas ejection paths 69C are conveniently formed.
[0005]
Similarly, the reducing gas supply passage 70 branches into two branches in the upper block 66 to form branch passages 70A and 70A, which are further branched and bent in the middle block 67, respectively, to form five convenient branch passages 70B. Are formed, and five gas ejection paths 70C are formed in the lower block 68 for convenience. In the above description, the number of gas ejection paths 69C is four for convenience and the number of gas ejection paths 70C is five for convenience. However, these are the numbers in the cross section of FIG. 9 and FIG. When viewed, a number of gas ejection paths 69C, 70C are open over the entire lower surface of the lower block 68.
[0006]
The shower head main body 61 is provided with a cooling water passage 71 in order to prevent the processing gas from being deposited as a film in the gas ejection passage 69C of the lower block 68 due to radiant heat from the semiconductor wafer W. The water passage 71 descends from near the end of the upper block 66 to uniformly cool the gas ejection passages 69C and 70C of the lower block 68 and flows out of the upper block 66 on the opposite side. The heating means 72 heats the middle block 67 and the upper block 66, which are less susceptible to radiant heat from the semiconductor wafer W, so that the processing gas is not liquefied or thermally decomposed. The exhaust passage 73 is connected to a vacuum pump (not shown), and evacuates the processing chamber 60 during film formation.
[0007]
[Patent Document 1]
JP-A-8-291385
[0008]
[Problems to be solved by the invention]
In the shower head main body 61 as described above, the flow path of the raw material gas and the reducing gas penetrates the blocks 66, 67, 68 in the thickness direction of the upper block 66, the middle block 67, and the lower block 68. ing. At the same time, since the source gas supply path 69 and the reducing gas supply path 70 are complicatedly branched in the upper block 66 and the middle block 67, the flow paths of the respective flow paths reaching the gas ejection paths 69C and 70C of the lower block 68. The flow path configuration is such that the resistance is difficult to be uniform. In particular, the processing gas that has flowed into the upper block 66 is, for example, in the case of the source gas supply path 69, four places where the flow path is bent at a substantially right angle to the gas ejection path 69C of the lower block 68. In addition, the increase in the flow path resistance and the pressure loss due to such a large number of bent portions have a great effect on the ejection state of the processing gas.
[0009]
Therefore, the flow rate of the processing gas ejected from each of the gas ejection paths 69C and 70C varies, and the crystal growth on the surface of the semiconductor wafer W becomes uneven, and the thickness of the crystal film and other film quality requirements are satisfied. It does not become something. Such a problem occurs because the flow path configuration in which the processing gases such as the raw material gas and the reducing gas penetrate the blocks 66, 67, and 68 in the thickness direction and overlap branches, respectively, is fundamental. Cause.
[0010]
Each of the upper block 66 and the middle block 67 is provided as a structure for branching the flow path of the processing gas, and finally, a large number of gas ejection paths 69C and 70C are formed in the lower block 68. It has a structure. For this reason, it is necessary to form a plurality of completely different flow paths for each processing gas in each of the blocks 66, 67, and 68, so that the flow path structure of each block becomes very complicated, and furthermore, It is not a good idea to control the production of blocks. In addition, if the flow path configuration is complicated and diversified as described above, the retention volume of the processing gas in the shower head becomes large, so that the residual gas at the time of forming the multilayer film cannot be completely removed. As a result, the ALD (Atomic Layer Deposition) cannot be properly advanced.
[0011]
When the blocks 66, 67, and 68 are stacked and integrated, for example, it is very important to accurately communicate the branch path 70A of the upper block 66 and the branch path 70B of the middle block 67 in terms of assembly accuracy. If such continuity is not properly secured, the flow area of the processing gas becomes small at this communicating point, and an appropriate flow rate cannot be secured. This will adversely affect quality. Further, if the branch paths 70A and 70B are displaced from each other at the communication point, a turbulent flow occurs in the flow of the processing gas thereat, so that the gas cannot be supplied properly.
[0012]
Further, the cooling water passage 71 uniformly cools the gas ejection passages 69C and 70C of the lower block 68, and heats the middle block 67 and the upper block 66, which are hard to receive radiant heat from the semiconductor wafer W, by the heating means 72. Therefore, it is not possible to control at different temperatures suitable for each processing gas for each of the source gas and the reducing gas.
[0013]
The present invention has been made in view of such circumstances, and has as its object to provide a film forming apparatus in which a gas ejection state from each nozzle of a gas ejection head is optimized.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, a film forming apparatus of the present invention has a gas ejection head for supplying a plurality of types of processing gases into a processing space, and forms a film on a surface of an object to be processed by the processing gas. In the apparatus, the gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on a head surface facing the object to be processed, and the gas ejection head is configured such that each processing gas is independent. And a flow path member which has a flow path to be introduced and is provided corresponding to each processing gas, and has a laminated structure in which the flow path members are separated in a direction substantially along the head surface. The gist is that the processing gas is supplied from the flow path of each flow path member to a nozzle corresponding to each processing gas.
[0015]
That is, in the film forming apparatus of the present invention, the gas ejection head is provided with a large number of nozzles for independently ejecting each processing gas on the head surface facing the object to be processed. Each of the processing gas includes a flow path member that has a flow path into which the processing gas is independently introduced, and is provided corresponding to each processing gas, and the flow path members are separated in a direction substantially along the head surface. The processing gas is supplied from the flow paths of the flow path members to the nozzles corresponding to the processing gases.
[0016]
With the above-described configuration, one type of processing gas supplied to the flow path of the specific flow path member is branched in the flow path member and directed to the nozzle for the processing gas. Further, another type of processing gas supplied to the flow path of another flow path member is also directed to a nozzle for the processing gas through a similar circulation process. Since each processing gas is circulated toward the nozzle in each of the flow path members having the laminated structure as described above, the routing structure of the processing gas flow path toward the nozzle is simplified, and accordingly, the flow path in each flow path is reduced. The flow path resistance also becomes easy to be uniform, and as a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, so that stable film formation can be performed and good film formation quality can be obtained. Further, since such a stable film formation proceeds, the time required for the film formation is shortened, which is effective for improving the productivity.
[0017]
For example, the flow path of each flow path member extends to a predetermined position in a direction substantially along the head surface, and is then turned to a nozzle for the processing gas. Since the processing gas can be ejected from a large number of nozzles based on such a flow path configuration, the bending point of the gas flow path becomes one in this case, and the increase in the flow path resistance and the pressure as described above. The problem of loss can be avoided. Further, since the flow path members are laminated substantially along the head surface, the flow path of the processing gas can be sufficiently secured over the entire area of the flow path members by utilizing the thickness of the flow path members. This makes it easier to direct the processing gas to a number of nozzles for each processing gas.
[0018]
In the film forming apparatus of the present invention, in the case where a plurality of nozzles for ejecting a plurality of types of different processing gases are arranged at predetermined intervals on the head surface at predetermined intervals, The flow path of the processing gas obtained by the flow path configuration in each of the flow path members stacked as described above opens to the head surface in the state of a nozzle to form the above-described ejection section, and this ejection section is a predetermined ejection section. Since the plurality of nozzles are arranged at intervals, the amount of the processing gas ejected from each ejection part can be made as uniform as possible with respect to the object to be processed, and is the best for good film formation. A processing gas atmosphere is obtained. In the case where a slight difference occurs in the amount of processing gas ejected from a plurality of arranged ejection parts, the arrangement density of the ejection parts having a small amount of ejection is increased to increase the ejection state of the processing gas to the workpiece. Can be optimized.
[0019]
In the film forming apparatus of the present invention, the ejection section has a multiplex structure in which nozzle openings and / or nozzle tubes for ejecting a plurality of different processing gases independently are concentrically arranged, and the nozzle tube has a head surface. And the nozzle tube is concentrically arranged when the nozzle tube is connected to the flow path member so as to communicate with the flow path of the flow path member into which the processing gas to be ejected is introduced. Since the nozzle openings and / or nozzle tubes are respectively connected to the flow paths of the flow path member for introducing a plurality of different processing gases, different processing gases are ejected concentrically in an annular layer. Such ejection is performed in the vicinity of the head surface. Therefore, the various processing gases are favorably mixed or reacted for the film formation at or near the location ejected from the nozzle opening and / or the nozzle tube. Further, since the nozzle tube is connected to the flow path of the flow path member, the nozzle pipe functions as a knock pin for positioning when the flow path members are stacked and assembled, thereby simplifying the assembling work. And the assembling accuracy is improved.
[0020]
In the film forming apparatus of the present invention, the nozzle tube is located at the inner side of the multiplex structure when the nozzle tube is connected to the flow path member arranged farther from the workpiece. Since the pipe is connected to the flow path member located far from the object to be processed, the processing gas from the flow path member on the far side can be ejected by the nozzle pipe as an independent flow path. Similarly, since the outer nozzle pipe of the inner nozzle pipe is connected to the flow path member closer to the workpiece than the flow path member, a different processing gas is supplied to the outer nozzle pipe. Can be spouted out as an independent flow path. That is, since different processing gases are individually introduced into the laminated flow path members, the processing gases can be ejected from the concentric nozzle tubes in an independent flow path form. .
[0021]
In the film forming apparatus of the present invention, in the gas ejection head, the flow path member located at least on the processing object side and the flow path member located on the opposite side to the processing object among the flow path members are respectively independent. When the temperature is controlled in such a manner, the flow member (head surface) located on the processing object side is appropriately cooled against radiant heat from the processing object. It is possible to prevent decomposition or a film formation phenomenon in or near the portion, ie, the nozzle opening and / or the nozzle tube. Further, by heating the flow path member until the flow path member is heated by radiant heat from the object to be processed, when a gas having a low dew point and easy to condense at a low temperature is used as a processing gas, the flow path It is possible to prevent the process gas from condensing in the inside, and to prevent film formation failure due to insufficient ejection of the process gas.
Also, in the flow path member located on the opposite side to the processing target, the flow path member to which the radiant heat from the processing target does not easily undergo appropriate temperature control, so a processing gas having a low dew point was used. Occasionally, such condensation and the like are prevented, and normal processing gas supply becomes possible. As described above, by independently controlling the temperature of the flow path member located on the processing object side and the flow path member located on the side opposite to the processing object, it is possible to correspond to each flow path member. The most suitable temperature control can be performed on the processed processing gas, and the properties of the injected processing gas become optimal for film formation.
[0022]
In the film forming apparatus of the present invention, in the case where the gas ejection head is configured to independently control the temperature of each flow path member, the temperature control adapted to the processing gas corresponding to each flow path member Is performed for each flow path member, so that the temperature control state of the entire gas ejection head can be optimized for the properties of the processing gas and the like.
[0023]
In the film forming apparatus of the present invention, each of the flow path members is provided with a diffusion chamber for temporarily holding the introduced processing gas, and the volume of the diffusion chamber is sufficiently smaller than the size of the flow path member. In such a case, since the volume of the diffusion chamber is set to be sufficiently smaller than the size of the flow path member, the dimensions such as the thickness of the flow path member are increased for the diffusion chamber arrangement. Therefore, the gas ejection head can be made compact. Further, by reducing the volume of the diffusion chamber, the processing gas is temporarily held at a relatively high pressure in the diffusion chamber having a small volume, and is supplied to each nozzle from that state. It can be maintained at a high level and the processing gas can be ejected without shortage.
[0024]
And, by reducing the volume of the diffusion chamber, the volume required for the flow of the processing gas and the like in each flow path member is significantly reduced. Therefore, when a multilayer film is formed by changing the type of the processing gas, the amount of the residual gas is reduced and the type of the processing gas can be changed quickly, for example, from the first film formation to the second film formation. The conversion becomes clear, that is, the so-called steepness at the time of forming a multilayer film is favorably obtained. Such an effect becomes more remarkable due to the simplification of the flow path as described later.
[0025]
In the film forming apparatus of the present invention, the flow path includes an introduction-side flow path that guides the introduced processing gas to the diffusion chamber, and a nozzle-side flow path that extends from the diffusion chamber and supplies the processing gas to each nozzle. In this case, the processing gas from the introduction-side flow path is temporarily held in the diffusion chamber, and is supplied to the plurality of ejection units via the nozzle-side flow path extending from the diffusion chamber, thereby achieving good processing. A jet of gas is made. Since the nozzle-side flow path extends from the diffusion chamber toward a large number of nozzles, the diffusion chamber is arranged at the branch of the nozzle-side flow path, and the flow path resistance and the pressure loss are low as described above. A flow path configuration is obtained.
[0026]
In the film forming apparatus of the present invention, the diffusion chamber is provided near a substantially central portion of each flow path member, and the processing gas is supplied to each nozzle via a nozzle-side flow path extending radially from the diffusion chamber. In this case, the length of the nozzle-side flow path from the diffusion chamber located at the approximate center of each flow path member to each nozzle can be made as uniform as possible, so that the flow resistance of the processing gas is also higher. The uniformity makes it possible to reduce the variation in the injection amount from each nozzle.
[0027]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, embodiments of the present invention will be described in detail.
[0028]
FIG. 1 shows an embodiment of the film forming apparatus of the present invention. In this apparatus, a separation plate 3 is provided in a processing container 2 having a processing space 1 therein, and a wafer 5 (for example, a semiconductor wafer) to be processed is aligned with an opening 4 opened in the separation plate 3. ) Is placed. A heater H is arranged above the back surface of the wafer 5. A vacuum pump (not shown) for evacuating the processing space 1 is provided, and air in the processing space 1 is sucked from the exhaust port 6.
[0029]
In order to supply a processing gas to the wafer 5, a gas ejection head 7 is disposed in the processing space 1. The surface of the wafer 5 is subjected to a CVD (Chemical Vapor Deposition) process by the processing gas injected from the gas ejection head 7 to form an insulating oxide film, a wiring metal film, and the like. The illustrated gas ejection head 7 is of a type that ejects three types of processing gases A, B, and C, and a plurality of ejection portions 9 are arranged on a head surface 8 facing the wafer 5. As shown in FIG. 3, a plurality of the ejection portions 9 are arranged on the head surface 8 at predetermined intervals.
[0030]
The flow path members 10A, 11B, 12C made of a thick plate-like material for each of the processing gases A, B, C have a laminated structure, and the flow path members 10A, 11B, 12C extend along the head surface 8. It is arranged in a state. Diffusion chambers 13A, 14B, and 15C are disposed at the center of each of the flow path members 10A, 11B, and 12C, and each diffusion chamber is provided with a processing gas supply source (not shown) from the introduction side flow paths 16A, 17B, and 18C. The flow paths are arranged inside the flow path members 10A, 11B, and 12C so that the processing gases A, B, and C are led through the flow path. Accordingly, the flow path members 10A, 11B, and 12C are provided for each of the processing gases A, B, and C, and accordingly, the diffusion chambers 13A, 14B, and 15C, the introduction-side passages 16A, 17B, and 18C, and the nozzle-side passage 19A. , 20B, and 21C are provided exclusively for the respective processing gases A, B, and C. In addition, nozzle-side flow paths 19A, 20B, and 21C extend radially from the diffusion chambers 13A, 14B, and 15C toward the ejection section 9. The state of the radial arrangement is shown in the processing diagram of the flow path member 10A in FIG.
[0031]
The diffusion chambers 13A, 14B, and 15C are provided near a substantially central portion of each of the flow path members 10A, 11B, and 12C, and process the nozzles through nozzle-side flow paths 19A, 20B, and 21C that extend radially from the diffusion chamber. Since the gas is supplied, the nozzle-side flow paths 19A, 20B, and 21C from the diffusion chambers 13A, 14B, and 15C located at substantially the center of the flow path members 10A, 11B, and 12C to the respective nozzles are formed. The length can be made as uniform as possible, and accordingly, the flow path resistance of the processing gas can be made more uniform, and the variation in the injection amount from each nozzle can be reduced.
[0032]
The jetting unit 9 has a large-diameter nozzle pipe 22 and / or a large-diameter nozzle pipe 22 which is provided concentrically with a small-diameter nozzle pipe 22 for independently jetting a plurality of different processing gases A, B, and C. It is constituted by a nozzle tube 23 and a nozzle opening 24 further disposed outside the nozzle tube 23. The nozzle tubes 22 and 23 having the multiplex structure as described above have the small-diameter nozzle tube 22 located on the inner side connected to the flow path member 10A arranged on the far side from the wafer 5 and located outside the nozzle tube 22. The large-diameter nozzle tube 23 is connected to the flow path member 11B closer to the wafer than the flow path member 10A.
[0033]
By the flow path formation as described above, the processing gas A flows through the nozzle flow path 22A in the nozzle pipe 22 and is supplied to the jetting portion 9, and the processing gas B is formed by a gap between the nozzle pipe 22 and the nozzle pipe 23. The processing gas C is supplied to the ejection section 9 through the nozzle flow path 23 </ b> B, and the processing gas C is supplied to the ejection section 9 from a nozzle opening 24 formed outside the nozzle pipe 23. Therefore, since different processing gases are individually introduced into the laminated flow path members 10A, 11B, and 12C, the processing gases A, B, and C are concentrically formed in independent flow paths. It can be ejected from the nozzle tubes 22 and 23.
[0034]
With the above-described configuration, a plurality of different processing gases A, B, and C supplied to the flow paths 16A, 17B, and 18C and 19A, 20B, and 21C of the flow path members 10A, 11B, and 12C are separated from the flow path members. It is branched in 10A, 11B, 12C and directed towards nozzle tubes 22, 23 and / or nozzle openings 24 for the process gas. In each of the flow path members 10A, 11B, and 12C having the laminated structure as described above, the processing gas A, B, and C are circulated toward the ejection section 9 for each of the processing gases A, B, and C. The routing structure of the C flow path is simplified, and accordingly, the flow path resistance in each flow path is also easily made uniform, and as a result, the amount of gas ejected in the large number of ejection parts 9 is made as uniform as possible. In addition, stable film formation proceeds, and good film formation quality can be obtained.
[0035]
As described above, the processing gases A, B, and C flowing into the flow paths 19A, 20B, and 21C of the flow path members 10A, 11B, and 12C are supplied to predetermined positions in a direction substantially along the head surface 8. And then diverted towards the nozzle for the process gas. Since the processing gas can be ejected from a large number of ejection sections 9 based on such a flow path configuration, the bending point of the gas flow path is one in this case, and the flow path resistance increases and the pressure loss decreases. The problem can be avoided. In addition, since the flow path members 10A, 11B, and 12C are stacked substantially along the head surface 8, the flow path of the processing gas is applied to the entire flow path member by utilizing the thickness of the flow path member. Can be sufficiently ensured, so that the processing gas can be easily directed to a large number of nozzle tubes 22 and 23 and the nozzle openings 24 for each processing gas.
[0036]
Since the plurality of ejection parts 9 are arranged at predetermined intervals, the ejection amount of the processing gas from each ejection part 9 can be made as uniform as possible with respect to the wafer 5, and a good composition can be obtained. The best processing gas atmosphere for film formation is obtained. In the case where a slight difference occurs in the amount of processing gas ejected from the plurality of arranged ejection parts 9, the arrangement density of the ejection parts 9 having a small amount of ejection is increased so that the processing gas is ejected to the wafer 5. The condition can be optimized.
[0037]
The concentrically arranged nozzle openings 24 and / or nozzle tubes 22 and 23 are respectively connected to flow paths of the flow path members 10A, 11B and 12C for introducing a plurality of types of different processing gases A, B and C. Therefore, different processing gases are ejected concentrically in an annular layer. Such ejection is performed near the head surface 8. Therefore, the various processing gases A, B, and C are mixed or reacted favorably for film formation at or near the locations ejected from the nozzle openings 24 and / or the nozzle tubes 22 and 23. Further, since the nozzle tubes 22, 23 are fitted in the flow channels of the flow channel members 10A, 11B, 12C, the knocking pins for positioning are used when the flow channel members are stacked and assembled. Thus, the assembling work is simplified, and the assembling accuracy is improved.
[0038]
In the gas ejection head 7, at least the flow path member 12C located on the wafer 5 side of the flow path members 10A, 11B, and 12C and the flow path member 10A located on the opposite side to the wafer 5 are independently formed. The temperature is controlled. For this purpose, as shown in FIGS. 1 to 3, a cooling pipe 25 for guiding cooling water as a temperature control fluid is provided in the flow path member 12 </ b> C. The cooling pipe 25 is arranged so that the surface of the flow path member 12C extends along the head surface 8, and in order to cool radiant heat from the wafer 5 to the head surface 8 as uniformly as possible, FIG. As shown in FIG. 5, a curved flow path is formed over the entire area of the head surface 8.
[0039]
Accordingly, the flow path member 12C (head surface) located on the side of the wafer 5 is appropriately cooled with respect to the radiant heat from the heated wafer 5, so that the ejection section 9, that is, the nozzle opening 24 and / or the nozzle pipe It is possible to prevent the processing gases A, B, and C from being decomposed in the vicinity of the insides 22 and 23 or the occurrence of a film formation phenomenon.
[0040]
Until the channel member 12C is heated by the radiant heat from the wafer 5, warm water can be circulated through the cooling pipe 25 to heat the channel member 12C. In this way, when a gas having a low dew point and easy to condense at a low temperature is used as the process gas C, the process gas is prevented from condensing in the flow path, and film formation failure due to insufficient ejection of the process gas C is prevented. Can be prevented. The temperature control medium flowing through the cooling pipe 25 is not limited to water, but may be an appropriate fluid such as oil or gas.
[0041]
Also, in the flow path member 10A located on the side opposite to the wafer 5, a heating heater 26 is arranged near the flow path member 10A in order to perform appropriate temperature control. By doing so, the flow path member 10A, to which the radiant heat from the wafer 5 is unlikely to spread, is subjected to appropriate temperature control. Therefore, when a processing gas having a low dew point in the flow path member 10A is used, its condensation is prevented. Normal processing gas supply becomes possible. As described above, by independently controlling the temperature of the flow path member 12C located on the wafer 5 side and the flow path member 10A located on the opposite side to the wafer 5, each flow path member 12C, The most suitable temperature control can be performed for the processing gases C and A corresponding to 10A, and the properties of the injected processing gas become optimal for film formation.
[0042]
In the gas ejection head 7, although not shown, a temperature control water flow pipe is passed through the intermediate flow path member 11B in order to independently control the temperature of each of the flow path members 10A, 11B, and 12C. be able to. By doing so, the temperature control adapted to the processing gas A, B, C corresponding to each of the flow path members 10A, 11B, 12C is performed for each of the flow path members 10A, 11B, 12C. 7 can be optimized for the properties of the processing gas and the like. The temperature control medium flowing through the water pipe is not limited to water, but may be an appropriate fluid such as oil or gas.
[0043]
Each of the flow path members 10A, 11B, and 12C is provided with diffusion chambers 13A, 14B, and 15C that temporarily hold the introduced processing gases A, B, and C, respectively. , 11B, 12C. In the flow path members 10A, 11B, and 12C in which the diffusion chambers are arranged from the diffusion chambers 13A, 14B, and 15C, the nozzle-side flow paths 19A, 20B, and 21C of the processing gases A, B, and C are directed toward a number of nozzles. Extends, so that even if a flow path is formed radially, a diffusion chamber is arranged at the branch of the nozzle-side flow paths 19A, 20B, and 21C, and the flow path resistance is increased as described above. And a flow path configuration with little pressure loss can be obtained. In addition, since the volumes of the diffusion chambers 13A, 14B, and 15C are set to be sufficiently smaller than the size of the flow path members 10A, 11B, and 12C, the thickness of the flow path members and the like are set for the diffusion chamber arrangement. There is no need to increase the size, and the gas ejection head 7 can be made compact. Further, by reducing the volumes of the diffusion chambers 13A, 14B, and 15C, the processing gases A, B, and C are temporarily held at a somewhat high pressure in the small-volume diffusion chamber, and are supplied to the nozzles from that state. In addition, the supply gas pressure for each flow path can be maintained high, and the processing gas can be ejected without shortage.
[0044]
Since the diffusion chambers 13A, 14B, and 15C are reduced in volume and the flow paths of the flow path members 10A, 11B, and 12C are simplified, the flow of the processing gas A, B, and C in each flow path member is achieved. Etc., the required volume is significantly reduced. Therefore, when a multilayer film is formed by changing the type of the processing gas, the amount of the residual gas is reduced and the type of the processing gas can be changed quickly, for example, from the first film formation to the second film formation. The conversion becomes clear, that is, the so-called steepness at the time of forming a multilayer film is favorably obtained.
[0045]
As shown in FIG. 4, the processing gas jetting portion 9 is opened near the head surface 8. The mixing and reaction states of the processing gases A, B, and C jetted to the wafer 5 are controlled. It is advisable to protrude the ejection section 9 from the head surface 8 for further improvement. In FIGS. 3B and 4, small, medium, and large nozzle tubes 22, 27, and 23 are arranged in three layers so as to eject three types of processing gases. FIG. 4A shows a case where all the nozzle tubes 22, 27, and 23 have the same protruding length. (B) is a case where the nozzle tubes 22, 27, and 23 are cut obliquely and the end surfaces of the respective tubes are aligned on one virtual plane. (C) is a case where the inner nozzle tube is shorter. (D) shows a case where the ends of the nozzle tubes 22, 27, and 23 are cut obliquely in the form as shown in (C).
[0046]
1 and 2 and the like, there is a case where introduction-side flow paths 16A, 17B, 18C and nozzle-side flow paths 19A, 20B, 21C, etc., which are flow paths, are formed inside the thickness of each flow path member. However, this can be replaced with a format as shown in FIG. That is, like the flow path member 11B illustrated in the cross-sectional state of FIG. 5, the introduction-side flow path 17B is formed in a groove state on the upper surface side of the flow path member 11B, and opens to the diffusion chamber 14B. . The diffusion chamber 14B is also provided with a recess from the lower surface side of the flow path member 11B. Further, a nozzle-side flow path 20B extending from the diffusion chamber 14B to each nozzle is also formed in a groove state on the lower surface side of the flow path member 11B. Reference numerals 28 and 29 are cover plates that seal the groove-shaped nozzle-side flow path 19A and the introduction-side flow path 18C. By adopting such a configuration, the flow path members 10A, 11B, and 12C can be manufactured by, for example, die casting, and the manufacturing cost can be significantly reduced.
[0047]
Further, as shown in FIG. 6, one flow path member may be composed of a plurality of components. Here, the flow path member 10A is taken as an example, and a concave portion 31 and a nozzle-side flow path 19A forming a part of the diffusion chamber 13A are formed in the upper plate 30, and a part of the diffusion chamber 13A is formed in the lower plate 32. Are formed and the introduction side flow path 16A are formed, and the upper plate 30 and the lower plate 32 are integrated by an adhesive or welding. In such a structure, the flow path member is manufactured by, for example, die casting, and the manufacturing cost can be greatly reduced.
[0048]
In addition, the head surface 8 is usually formed in a flat shape. However, the boundary surface between adjacent flow channel members is inclined or concave or convex due to the shape and size of the internal flow channel of the flow channel member. Or can be shaped. By doing so, the shape of the flow path member can be freely selected, and the flow of the processing gas can be optimized so as to achieve better film formation quality.
[0049]
FIG. 7 shows another embodiment of the gas ejection head in the film forming apparatus of the present invention.
[0050]
In this embodiment, the flow paths branched from the respective nozzle-side flow paths 19A, 20B, and 21C are opened in the injection section 9 as the nozzle openings 34A, 35B, and 36C. The nozzle openings 34A, 35B, and 36C can be arranged close to each other in a state of forming an equilateral triangle as shown in FIG. It is also possible to arrange them close to each other on a straight line. The other parts are the same as those of the above embodiment, and the same parts are denoted by the same reference numerals.
[0051]
According to the above configuration, the jetting portion 9 can be manufactured with a simple structure without using components such as the nozzle tubes 22, 27, and 23 described above. Other than that, the same operation and effect as those of the above-described embodiment can be obtained.
[0052]
FIG. 8 is an explanatory diagram in the case where the flow path member 10A is manufactured by machining. A plurality of diametric holes 38 are formed in a thick circular material plate 37, and these holes 38 form the nozzle side flow path 19 </ b> A. A recess 39 is provided at the center where each hole 38 intersects. The diffusion chamber 13A is configured. The smallest diameter nozzle tube 22 is connected to the hole indicated by reference numeral 40. Further, the opening end on the outer peripheral side of each hole 38 is closed with a plug 41.
[0053]
The laminated channel members 10A, 11B, and 12C are firmly connected with bolts penetrating the respective channel members, or the ends of the respective channel members are welded by welding portions indicated by reference numeral 42 in FIG. Alternatively, they can be integrated by bonding with an adhesive or the like.
[0054]
In the above embodiment, one diffusion chamber 13A, 14B, 15C is disposed in each of the flow path members 10A, 11B, 12C. However, this diffusion chamber is connected to each flow path member or a specific flow path. It is also possible to arrange a plurality of members, for example, two members, to freely select the distribution of the processing gas.
[0055]
【The invention's effect】
As described above, according to the film forming apparatus of the present invention, with the above configuration, one type of processing gas supplied to the flow path of a specific flow path member is branched in the flow path member. It is directed towards a nozzle for the process gas. Further, another type of processing gas supplied to the flow path of another flow path member is also directed to a nozzle for the processing gas through a similar circulation process. Since each processing gas is circulated toward the nozzle in each of the flow path members having the laminated structure as described above, the routing structure of the processing gas flow path toward the nozzle is simplified, and accordingly, the flow path in each flow path is reduced. The flow path resistance also becomes easy to be uniform, and as a result, the amount of gas ejected from a large number of nozzles is made as uniform as possible, so that stable film formation can be performed and good film formation quality can be obtained. Further, since such a stable film formation proceeds, the time required for the film formation is shortened, which is effective for improving the productivity.
[0056]
For example, the processing gas that has flowed into the flow path of each flow path member is extended to a predetermined position in a direction substantially along the head surface, and is then diverted toward a nozzle for the processing gas. . Since the processing gas can be ejected from a large number of nozzles based on such a flow path configuration, the bending point of the gas flow path becomes one in this case, and the increase in the flow path resistance and the pressure as described above. The problem of loss can be avoided. Further, since the flow path members are laminated substantially along the head surface, the flow path of the processing gas can be sufficiently secured over the entire area of the flow path members by utilizing the thickness of the flow path members. This makes it easier to direct the processing gas to a number of nozzles for each processing gas.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a film forming apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged view of the film forming apparatus.
FIG. 3A is a plan view of a gas ejection head, and FIG. 3B is a plan view showing an opening of a nozzle tube.
FIG. 4 is a sectional view showing a modified example of the nozzle tube.
FIG. 5 is a cross-sectional view showing a modification of the flow path member.
FIG. 6 is a cross-sectional view showing another modification of the flow path member.
FIG. 7A is a cross-sectional view of a gas ejection head according to a second embodiment, and FIGS. 7B and 7C are plan views showing positions of nozzle openings.
FIG. 8 is a plan view showing a processing state of a flow path member.
FIG. 9 is a cross-sectional view showing a conventional film forming apparatus.
FIG. 10 is an exploded sectional view showing a block body of the film forming apparatus.
[Explanation of symbols]
1 Processing space
2 Processing container
3 Separation plate
H heater
4 opening
5 Wafer
6 Exhaust port
7 Gas ejection head
8 Head side
9 spout
10A channel member
11B channel member
12C channel member
13A diffusion room
14B diffusion room
15C diffusion room
16A Inlet flow path
17B Introductory channel
18C Introductory channel
19A nozzle side flow path
20B nozzle side flow path
21C Nozzle side flow path
22 Small diameter nozzle tube
22A nozzle flow path
23 Large-diameter nozzle tube
23B nozzle flow path
24 Nozzle opening
25 Cooling pipeline
26 Heating heater
27 Medium diameter nozzle tube
28 Cover plate
29 Cover plate
30 Upper plate
31 hollow
32 lower plate
33 hollow
34A nozzle opening
35B nozzle opening
36C nozzle opening
37 material plate
38 holes
39 hollow
40 holes
41 plug
42 welds
60 processing container
61 Shower head body
62 columns
63 Mounting table
64 heating lamp
65 Transmission window
66 Upper block
67 Middle block
68 Lower block
69 Source gas supply path
69A branch road
69B fork
69C gas ejection path
70 Reducing gas supply path
70A branch road
70B branch road
70C gas ejection path
71 Cooling channel
72 heating means
73 Exhaust passage
W semiconductor wafer

Claims (9)

A film forming apparatus that has a gas ejection head that supplies a plurality of types of processing gases in a processing space and performs film formation on a surface of an object to be processed by the processing gas,
The gas ejection head is provided with a number of nozzles for independently ejecting each processing gas on a head surface facing the object side,
The gas ejection head has a flow path member into which each processing gas is independently introduced, and includes a flow path member corresponding to each processing gas. It has a laminated structure that is separated in a direction substantially along,
A film forming apparatus, wherein a processing gas is supplied from a flow path of each flow path member to a nozzle corresponding to the processing gas. 2. The film forming apparatus according to claim 1, wherein a plurality of nozzles for ejecting a plurality of types of different processing gases are arranged at predetermined intervals on the head surface at predetermined intervals. The ejection section has a multi-layered structure in which nozzle openings and / or nozzle tubes for independently ejecting a plurality of different processing gases are arranged concentrically. The nozzle tube has an opening near a head surface, 3. The film forming apparatus according to claim 2, wherein the nozzle tube is connected to the flow path member so as to communicate with the flow path of the flow path member into which the processing gas to be ejected is introduced. 4. The film forming apparatus according to claim 3, wherein the nozzle pipe is connected to a flow path member disposed on a side farther from the processing object as the nozzle pipe is positioned inside the multiplex structure. 5. In the gas ejection head, the temperature of the flow path member located at least on the processing object side of the flow path members and the flow path member located on the opposite side to the processing object are independently controlled. The film forming apparatus according to claim 1, wherein: 6. The film forming apparatus according to claim 5, wherein in the gas ejection head, the temperature of each flow path member is independently controlled. 2. The flow path member, wherein a diffusion chamber for temporarily holding the introduced processing gas is provided, and a volume of the diffusion chamber is set to be sufficiently smaller than a size of the flow path member. The film forming apparatus according to any one of claims 1 to 6. 8. The structure according to claim 7, wherein the flow path comprises an introduction-side flow path for guiding the introduced processing gas to the diffusion chamber, and a nozzle-side flow path extending from the diffusion chamber and supplying the processing gas to each nozzle. Membrane equipment. 9. The processing chamber according to claim 8, wherein the diffusion chamber is provided near a substantially central portion of each flow path member, and a processing gas is supplied to each nozzle via a nozzle-side flow path extending radially from the diffusion chamber. 10. Film forming equipment.

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