JP2004196642A - Apparatus and method for preparing silicon - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for preparing high-purity silicon through a gas-phase zinc reduction method wherein the reaction is stably carried out by locating the inlets for introducing raw material gases into the reaction apparatus at different heights and by introducing an appropriate inert gas, and a preparation method. <P>SOLUTION: The inlet for introducing a zinc gas and the inlet for introducing a silicon tetrachloride gas are located at the upper and lower parts of the reaction apparatus, respectively. The reduction reaction is stably carried out by introducing the raw material gases through these inlets and introducing the inert gas into the outlet side, the zinc gas side, etc., of the reaction apparatus. Product quality is improved by improving the purity of the raw materials by passing the raw material gases to be introduced through the silicon. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing high-purity silicon, and more particularly, to a structure of a reactor for performing a reduction reaction in a gas phase by using silicon tetrachloride and metal zinc as raw materials by evaporating them.
[0002]
[Prior art]
Since the production of high-purity silicon by the conventional zinc reduction method is a method in which silicon tetrachloride gas is introduced into molten zinc, a reaction takes place between liquid and gas, and as a result, high-purity silicon of stable quality is produced. I couldn't get it.
[0003]
[Problems to be solved by the invention]
An object of the present invention is to introduce a relatively light zinc gas from an upper part and a relatively heavy silicon tetrachloride gas from a lower part in a gas phase in a reactor for producing high-purity silicon by a vapor phase zinc reduction method. Accordingly, an object of the present invention is to provide an apparatus and a method capable of obtaining high-purity silicon of stable quality.
[0004]
In the reaction device, the reaction proceeds as it proceeds from the introduction portion of the raw material gas, and the reaction product tends to be clogged. Therefore, the inert gas is introduced from the outlet side.
[0005]
In the reactor, the reaction proceeds as it proceeds from the inlet of the raw material gas, and the product is easily clogged. Therefore, the reactor is operated with the outlet temperature set at a higher temperature.
[0006]
When silicon tetrachloride gas is sent to a portion of the zinc atmosphere, a partial reaction takes place there to generate a solid, which causes inconvenience such as clogging. Operate higher than the silicon tetrachloride gas atmosphere.
[0007]
[Means for Solving the Problems]
The invention claimed in the present application to solve the above problems is as follows.
(1) In a reaction apparatus relating to a zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, an inlet of high-purity zinc gas is connected to an inlet of high-purity silicon tetrachloride gas. High-purity silicon production equipment located relatively above.
(2) A method for producing high-purity silicon, wherein a stable reduction reaction is performed using the apparatus according to (1).
(3) In a reaction apparatus related to a zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, a reaction apparatus in which the introduction of an inert gas is on the opposite side to the introduction side of a raw material gas. High-purity silicon production equipment introduced from the outlet side of
(4) Silicon produced by setting the temperature on the outlet side higher than on the material introduction side in a reactor related to the zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas A method for producing high-purity silicon, which prevents clogging inside a reactor by the above method.
(5) In the reaction system relating to the zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, at the time of startup, silicon tetrachloride gas is not mixed into zinc gas supplied as a raw material. A method for producing high-purity silicon in which an inert gas is introduced into a zinc evaporator and a zinc gas superheater in which zinc gas is present, and no inert gas is introduced into a silicon tetrachloride gas side, during normal operation except when the gas is stopped.
(6) In a reaction system related to a zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, in order to improve the purity of zinc gas or silicon tetrachloride gas supplied as a raw material, A method for producing high-purity silicon in which high-purity silicon is provided after gasification is performed and before it is introduced into a reaction apparatus.
(7) A method for producing high-purity silicon using a high-purity silicon crystal having a small particle diameter in a high-purity silicon crystal generated in a reactor as the high-purity silicon provided in 6 above for improving the purity.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
Embodiment 1
FIG. 1 is an explanatory view showing an embodiment of the device of the present invention.
The inlet for the zinc gas into the reactor (1) is located at the upper (2), and the inlet for the silicon tetrachloride gas is located at the lower (3). When the size of the reactor (1) is 30 cm (4), the inlets (2) and (3) are respectively mounted at positions 5 to 10 cm from the center of the reactor.
[Brief description of the drawings]
FIG. 1 shows an example of a reactor according to the present invention.
{Circle around (1)} Reactor {2} ... Inlet for zinc gas {3} ... Inlet for silicon tetrachloride gas {4} ... Reactor size

Claims (7)

In a reactor related to a zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, the inlet of the high-purity zinc gas is relatively positioned with respect to the inlet of the high-purity silicon tetrachloride gas. High-purity silicon production equipment placed at the top. In the reactor related to the zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, an inert gas is introduced on the outlet side of the reactor opposite to the source gas introduction side. High-purity silicon production equipment to be introduced. In the reactor related to the zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, the reactor on the outlet side is set higher than the raw material introduction side, so that the reactor using the generated silicon A method for producing high-purity silicon that prevents internal clogging. In a reaction system related to the zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, at the time of starting and stopping so that silicon tetrachloride gas is not mixed into the zinc gas supplied as a raw material. A method for producing high-purity silicon in which an inert gas is introduced into a zinc evaporator and a zinc gas superheater in which zinc gas is present during normal operation except for the inert gas, and no inert gas is introduced into the silicon tetrachloride gas side. In a reaction system related to the zinc reduction method of silicon tetrachloride using high-purity zinc gas and high-purity silicon tetrachloride gas, in order to improve the purity of the zinc gas or silicon tetrachloride gas supplied as a raw material, each is gasified. After that, a method for producing high-purity silicon in which high-purity silicon is provided before being introduced into a reaction apparatus. 6. A method for producing high-purity silicon, comprising using high-purity silicon having a small particle size among high-purity silicon crystals generated in a reactor as the high-purity silicon provided in order to improve the purity. A method for producing high-purity silicon, wherein a stable reduction reaction is performed using the apparatus according to claim 1.

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