JP2004014646A - Substrate processing equipment, substrate processing method, and nozzle - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing equipment and a substrate processing method which allows removal of impurities including micells, insoluble matters, or the like attached to a substrate, and also to provide a nozzle for the rinse treatment used for these. <P>SOLUTION: By jetting a rinsing liquid to the substrate supplied with a developer solution, from a main hole 55b and a subhole 55c of the nozzle 55, a disturbance action can be generated on the substrate, with bubbles produced in the action applying stress to the the impurities, which are then removed. Moreover, this rinsing treatment serves also to wash out a processing liquid, thereby preventing an increase in processing time. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing apparatus for developing, for example, a resist pattern on a semiconductor substrate in a photolithography process in the manufacture of a semiconductor device, a substrate processing method, and a rinsing nozzle used for these.
[0002]
[Prior art]
In the photolithography process of manufacturing a semiconductor device, a photoresist is applied to a surface of a semiconductor wafer (hereinafter, referred to as “wafer”), a mask pattern is exposed on the resist, and developed to form a resist pattern on the wafer surface. are doing.
[0003]
In such a photolithography process, for example, in a paddle developing process, a developing solution is supplied onto a wafer, and the wafer is allowed to stand for a predetermined time to proceed with development. Thereafter, for example, a rinsing liquid is supplied onto the wafer to wash away the developing liquid.
[0004]
[Problems to be solved by the invention]
However, during the development process, micelles (aggregated state of micro-level flowing molecules) may be formed by a salting-out reaction, and the micelles remain on the wafer due to electrostatic force or van der Waals force. There is a problem that defects occur. In addition, insolubles may be precipitated by a pH shock (pH shock) generated by the supply of the developer, and the insolubles are also likely to adhere to the wafer. In addition, insolubles are often scraped off the polymer surface of the resist, and the insolubles are often reattached. Since such micelles and insolubles adhere to the wafer by a strong force such as an electrostatic force as described above, there is a problem that they cannot be removed by the current rinsing process.
[0005]
In view of the circumstances as described above, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of removing impurities such as micelles and insolubles attached to a substrate, and a rinsing nozzle used for these. Is to provide.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a substrate processing apparatus of the present invention includes a holding unit that holds a substrate, a unit that supplies a processing liquid to the substrate held by the holding unit, And a rinsing means for discharging the liquid and the second liquid to disturb the processing liquid to remove impurities attached to the substrate, and to wash out the processing liquid.
[0007]
In the present invention, the processing liquid, the first processing liquid, and the second processing liquid are discharged by rinsing the first liquid and the second liquid to the substrate to which the processing liquid is supplied. Are disturbed, and for example, bubbles are generated by the disturbance. The disturbance and the bubbles give a stress to the impurity, so that the impurity can be removed (hereinafter, this is referred to as a disturbance effect). In addition, since the rinsing means also has a function of washing out the processing liquid as in the conventional case, the processing time is not increased. Here, the processing liquid is, for example, a developer. Further, for example, pure water can be used for the first liquid and the second liquid, respectively.
[0008]
In one embodiment of the present invention, the holding unit further includes means for rotating the substrate, and discharges the first liquid and the second liquid while rotating the substrate. For example, if the first liquid and the second liquid are discharged to the center of the substrate, the mixed liquid of the first liquid and the second liquid flows on the substrate by the centrifugal force of rotation. Thereby, the kinetic energy of the disturbed liquid on the substrate surface increases, and the action of removing impurities can be enhanced.
[0009]
In one embodiment of the present invention, the rinsing means includes a first discharge section in which a first hole for discharging the first liquid is formed, and a second hole for discharging the second liquid. And a nozzle having a second ejection unit formed. By providing such a first hole and a second hole, the first liquid and the second liquid can be separately discharged in order to generate a disturbance action. Then, for example, if the supply system of the liquid supplied to the nozzle (the supply system is, for example, a pump or a pipe for pumping the liquid) is the same, the size of the first hole and the second By making the size of the hole different, the flow rate of the liquid discharged from the small diameter hole can be made smaller than the flow rate of the liquid discharged from the large diameter hole. Thus, for example, when the first liquid is discharged from the first hole to the substrate central portion, the liquid disturbed flows smoothly from the substrate central portion toward the substrate peripheral portion, and the action of removing impurities is improved. . When the supply system of the first liquid and the supply system of the second liquid are separated, for example, the flow velocity can be varied by adjusting the pressure of a pump or the like of the supply system.
[0010]
In one embodiment of the present invention, it is preferable that a plurality of the second holes are provided around the first hole. For example, a nozzle is arranged on the central portion of the substrate, the first liquid is discharged from the first hole to the central portion of the substrate, and the second liquid is discharged from a plurality of second holes provided around the first hole. Is supplied in a circular shape on the first liquid diffused on the substrate. In this way, the disturbed liquid can be uniformly diffused on the substrate, and the action of removing impurities is improved. This is particularly effective when the substrate is rotated as described above.
[0011]
Furthermore, for example, if the supply system of the liquid supplied to the nozzle is the same, the flow rate of the second liquid is reduced by making the size of the second hole smaller than the size of the first hole. It can be less than that, and for example, a disturbance effect such as a bubble generation efficiency can be enhanced. Specifically, the diameter of the first hole is 1.5 mm to 3.0 mm, and the diameter of the second hole is 0.2 to 1.0 mm. The reason why the diameter of the first hole is set as described above is that when the liquid is discharged at a predetermined discharge pressure, if the diameter is larger than 3.0 mm, the flow rate of the liquid per unit time becomes too large, and the impact is increased. This may cause the resist pattern to collapse. In addition, the reason why the diameter of the second hole is set as described above is that when the liquid is discharged at a predetermined discharge pressure, if the diameter is 1.0 mm or more, the flow rate becomes too large, and the liquid is discharged onto the substrate. This is because the second liquid also flows to the central portion of the substrate, and the stagnation of the liquid causes the impurities to re-adhere, thereby reducing the removal action. As for the specific flow rates of the first and second liquids, the discharge flow rate of the first liquid is 500 ml / min to 1000 ml / min, and the discharge flow rate of the second liquid is 100 ml / min to 500 ml / min. It is preferable that With such a flow rate, the disturbed liquid flows smoothly from the central part of the substrate to the peripheral part, and impurities can be removed.
[0012]
In one embodiment of the present invention, the nozzle includes a groove provided between the first discharge unit and the second discharge unit. By providing such a groove, for example, when the liquid is discharged, the interference between the first liquid and the second liquid may be provided, as compared with the case where the discharge surfaces of the first discharge part and the second discharge part are the same. Can be improved, and a disturbance effect can be reliably generated on the substrate.
[0013]
In one embodiment of the present invention, the discharge direction of the first liquid and the discharge direction of the second liquid are different. For example, if the discharge direction of the second liquid is directed obliquely inside the substrate with respect to the substrate surface, the second liquid is directed in the opposite direction to the direction in which the first liquid diffuses from the center of the substrate to the outside of the substrate. Since the liquid is discharged, it is possible to enhance a disturbance effect such as a bubble generation rate.
[0014]
In one embodiment of the present invention, the rinsing means includes a first nozzle formed with a first hole for discharging the first liquid, and a second hole formed for discharging the second liquid. And a second nozzle. As described above, two nozzles are prepared, and the first liquid and the second liquid are discharged from each of the nozzles, so that a disturbance effect such as a bubble can be generated. In this case, by making the size of the second hole smaller than the size of the first hole, the flow rate of the second liquid can be made smaller than that of the first liquid as described above. As a result, the disturbed liquid can be smoothly flowed from the central portion of the substrate to the peripheral portion, and impurities can be removed, while generating the disturbing effect.
[0015]
A substrate processing apparatus according to another aspect of the present invention includes a holding unit that holds a substrate, a unit that supplies a processing liquid to the substrate held by the holding unit, and an elongated shape, and a first unit that extends in the longitudinal direction. And a plurality of second holes are arranged in a row, and the first liquid and the second liquid are respectively discharged from the first hole and the second hole to the substrate to which the processing liquid is supplied. Rinsing means for removing the impurities attached to the substrate by disturbing the processing solution and washing away the processing solution.
[0016]
In the present invention, since the first hole and the plurality of second holes are arranged in a row in the longitudinal direction of the nozzle having a long shape, the first liquid discharged to the center of the substrate is located outside the nozzle. Thus, the second liquid can be discharged from the plurality of holes. As a result, for example, when the discharge is performed while rotating the substrate, a disturbing action such as generation of bubbles can be given to the entire surface of the substrate in a short time, and the efficiency of removing impurities can be increased. In this case, for example, the first liquid may be discharged from the first hole to the center of the substrate, and the second liquid may be discharged from the second hole to the outside of the substrate from the center.
[0017]
In the substrate processing method of the present invention, a processing liquid is supplied to the substrate, and a first liquid and a second liquid are discharged to the substrate supplied with the processing liquid to disturb the processing liquid and disperse the processing liquid to the substrate. Removing the attached impurities and washing away the treatment liquid.
[0018]
In the present invention, if the first liquid and the second liquid are discharged to the substrate to which the processing liquid has been supplied, for example, a disturbing action such as generation of bubbles can be generated, and this disturbing action gives stress to impurities. This makes it possible to remove the impurities. In addition, since it also has the function of washing out the processing liquid as in the related art, the processing time is not increased.
[0019]
In one embodiment of the present invention, the first liquid is discharged before the second liquid. In this way, the first liquid is supplied onto the substrate, the first liquid is diffused to some extent on the substrate, and then the second liquid is discharged, thereby reducing the impact of the discharge of the second liquid on the substrate. And the pattern can be prevented from collapsing. In this case, it is particularly effective when the flow rate of the second liquid is set higher than the first flow rate in order to enhance a disturbance effect such as a bubble generation rate.
[0020]
The nozzle of the present invention discharges the first liquid and the second liquid to the substrate to which the processing liquid has been supplied, disturbs the processing liquid to remove impurities attached to the substrate, and rinses the processing liquid. A first discharge unit having a hole for discharging the first liquid, and a second discharge unit having a hole for discharging the second liquid. I do.
[0021]
By discharging the first liquid and the second liquid to the substrate to which the processing liquid is supplied by such a nozzle, for example, a disturbing action such as a bubble can be generated. , The impurities can be removed. In addition, since it also has the function of washing out the processing liquid as in the related art, the processing time is not increased.
[0022]
Further, a nozzle according to another aspect of the present invention has a long shape, discharges a first liquid and a second liquid to a substrate to which a processing liquid is supplied, and disturbs the processing liquid to disturb the substrate. A nozzle for removing impurities adhering to the nozzle and for washing away the processing liquid, wherein a first discharge part having a hole for discharging the first liquid is formed, And a second discharge section having a plurality of rows of holes for discharging the second liquid.
[0023]
In the present invention, for example, when discharging is performed while rotating the substrate, a disturbing action such as generation of bubbles can be given to the entire surface of the substrate in a short time, and the efficiency of removing impurities can be increased. In this case, for example, the first liquid may be discharged from the first hole to the center of the substrate, and the second liquid may be discharged from the second hole to the outside of the substrate from the center.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0025]
1 to 3 are views showing the entire configuration of a coating and developing apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, and FIGS. 2 and 3 are front and rear views.
[0026]
The coating and developing apparatus 1 loads or unloads semiconductor wafers W from the outside into the apparatus 1 in units of, for example, 25 wafer cassettes CR, and loads or unloads wafers W from the wafer cassette CR. And a processing station 12 in which various single-wafer processing units for performing predetermined processing on wafers W one by one in a coating and developing process are arranged at predetermined positions in multiple stages. The interface unit 14 for transferring the wafer W between the station 12 and the exposure apparatus 100 provided adjacent to the station 12 is integrally connected.
[0027]
In the cassette station 10, as shown in FIG. 1, a plurality of, for example, five wafer cassettes CR are mounted in a row in the X direction with their respective wafer entrances facing the processing station 12 at the positions of the projections 20 a on the cassette mounting table 20. The wafer carrier 22 that is placed and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. ing. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction, so as to be able to access a heat treatment system unit belonging to a third processing unit section G3 having a multi-stage configuration described later as shown in FIG. It has become.
[0028]
As shown in FIG. 1, the processing station 12 includes a third processing unit G3, a fourth processing unit G4, and a fifth processing unit G5 from the cassette station 10 on the rear side of the apparatus (upper side in the figure). A first main wafer transfer device A1 is provided between the third processing unit G3 and the fourth processing unit G4. In the first main wafer transfer device A1, the first main wafer transfer body 16 selectively accesses the first processing unit G1, the third processing unit G3, the fourth processing unit G4, and the like. It is installed to be able to. In addition, a second main wafer transfer device A2 is provided between the fourth processing unit unit G4 and the fifth processing unit unit G5. The second main wafer carrier 17 is provided so as to selectively access the second processing unit G2, the fourth processing unit G4, the fifth processing unit G5, and the like.
[0029]
Further, a heat treatment unit is provided on the back side of the first main wafer transfer device A1, for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W, and a heating unit (heating unit) for heating the wafer W. HP) 113 are stacked in multiple stages as shown in FIG. The adhesion unit (AD) may further have a mechanism for controlling the temperature of the wafer W. On the back side of the second main wafer transfer device A2, a peripheral exposure device (WEE) 120 for selectively exposing only the edge portion of the wafer W, a film thickness inspection device for inspecting a resist film applied to the wafer W 119 and a line width inspection device 118 for inspecting the line width of the resist pattern are provided in multiple stages. The film thickness inspection device 119 and the line width inspection device 118 may be provided outside the coating / development processing device 1 instead of being provided inside the coating / developing processing device 1 as described above. Further, the heat treatment unit (HP) 113 may be arranged on the back side of the second main wafer transfer device A2, similarly to the back side of the first main wafer transfer device A1.
[0030]
As shown in FIG. 3, in the third processing unit G3, an oven-type processing unit that performs a predetermined process by placing the wafer W on a mounting table, for example, a high-temperature heating unit that performs a predetermined heating process on the wafer W (BAKE), a cooling processing unit (CPL) for performing cooling processing on the wafer W with high-accuracy temperature management, a transition unit (TRS) serving as a transfer unit of the wafer W from the wafer carrier 22 to the main wafer carrier 16, Delivery / cooling processing units (TCP), which are separately provided in two upper and lower stages, respectively, a transfer unit and a cooling unit, are stacked in, for example, 10 stages from the top. In the third processing unit G3, the third stage from the bottom is provided as a spare space in the present embodiment. Also in the fourth processing unit G4, for example, a post-baking unit (POST), a transition unit (TRS) serving as a wafer transfer unit, a pre-baking unit (PAB) for performing a heating process on the wafer W after the formation of the resist film, a cooling processing unit (CPL) are stacked in, for example, 10 stages from the top. Further, in the fifth processing unit G5, for example, a post-exposure baking unit (PEB) for performing a heating process on the exposed wafer W, a cooling processing unit (CPL), and a transfer unit for the wafer W as thermal processing means. Are stacked in, for example, 10 stages from the top.
[0031]
The unit of the heat processing system includes, for example, a temperature control plate C for controlling the temperature of the wafer W on the front side as shown in a fourth processing unit section G4 in FIG. The plate H is arranged on the back side.
[0032]
In FIG. 1, a first processing unit G1 and a second processing unit G2 are provided in the Y direction on the front side of the processing station 12 (downward in the figure). The space between the first processing unit G1 and the cassette station 10 and the space between the second processing unit G2 and the interface 14 are used for controlling the temperature of the processing liquid supplied in each processing unit G1 and G2. Liquid temperature control pumps 24 and 25 are provided, and clean air from an air conditioner (not shown) provided outside the coating and developing apparatus 1 is supplied to the inside of each of the processing units G1 to G5. Ducts 31 and 32 are provided.
[0033]
As shown in FIG. 2, in a first processing unit G1, five spinner-type processing units for performing a predetermined process by placing a wafer W on a spin chuck in a cup CP, for example, a resist as a resist film forming unit The coating processing unit (COT) has three stages, and the bottom coating unit (BARC) for forming an antireflection film for preventing reflection of light at the time of exposure is two stages, and five stages are sequentially stacked from below. Similarly, in the second processing unit G2, five spinner type processing units, for example, a development processing unit (DEV) as a development processing unit are stacked in five stages. In the resist coating unit (COT), the drainage of the resist solution is troublesome both mechanically and in terms of maintenance, so that it is preferable to dispose the resist solution in the lower stage. However, they can be arranged in the upper stage as needed.
[0034]
Further, chemical chambers (CHM) 26 and 28 for supplying the above-mentioned predetermined processing liquid to the respective processing unit sections G1 and G2 are provided at the lowermost stage of the first and second processing unit sections G1 and G2, respectively. I have.
[0035]
A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 14, and a wafer carrier 27 is provided at the center. The wafer carrier 27 moves in the X and Z directions to access both cassettes CR and BR. In addition, the wafer carrier 27 is configured to be rotatable in the θ direction, and can also access the fifth processing unit G5. Further, as shown in FIG. 3, a plurality of high-precision cooling processing units (CPL) are provided on the back surface of the interface unit 14, for example, in two stages, upper and lower. The wafer carrier 27 is also accessible to this cooling processing unit (CPL).
[0036]
Next, the development processing unit (DEV) according to the present invention will be described in detail. FIGS. 4 and 5 are a plan view and a cross-sectional view, respectively, showing a developing unit (DEV) according to an embodiment of the present invention.
[0037]
In this unit, a fan / filter unit F for supplying clean air into the housing 41 is attached above the housing 41. Below, an annular cup CP is arranged near the center of the unit bottom plate 51 smaller than the width of the housing 41 in the Y direction, and the spin chuck 42 is arranged inside the cup CP. The spin chuck 42 is configured to rotate by the rotational driving force of the motor 43 in a state where the wafer W is fixedly held by vacuum suction.
[0038]
In the cup CP, a pin 48 for transferring the wafer W is provided so as to be able to move up and down by a driving device 47 such as an air cylinder. Thus, the wafer can be transferred to and from the main wafer carrier 17 through the opening 41a while the shutter 52 provided to be openable and closable is open. A drain port 45 for waste liquid is provided at the bottom of the cup CP. A drain pipe 33 is connected to the drain port 45, and the drain pipe 33 communicates with a lower drain port (not shown) using a space N between the unit bottom plate 51 and the housing 41.
[0039]
The developing solution nozzle 53 for supplying the developing solution to the surface of the wafer W is formed, for example, in a long shape having a length substantially the same as the diameter of the wafer W, and is supplied through a supply pipe 34 to a chemical chamber (CHM). 28 (FIG. 2) is connected to a developer tank (not shown). The developer nozzle 53 is detachable from the nozzle holding member 60 of the nozzle scan arm 36. The nozzle scan arm 36 is attached to the upper end of a vertical support member 49 that can move horizontally on a guide rail 44 laid in one direction (Y direction) on the unit bottom plate 51, and is vertically moved by, for example, a belt driving mechanism. It moves in the Y direction integrally with the support member 49. Thus, the developing solution nozzle 53 waits in the developing solution nozzle bus 46 disposed outside the cup CP except when the developing solution is supplied, and is transferred to above the wafer W when the developing solution is supplied. It has become. The developing solution nozzle 53 has, for example, a plurality of discharge holes (not shown) at its lower end, and the developing solution is discharged from the plurality of discharging holes.
[0040]
Further, a rinse nozzle 55 for discharging a rinse liquid is attached to the rinse nozzle arm 54 on the side of the cup CP. As shown in FIG. 6, the rinse nozzle arm 54 is provided rotatably in the θ direction by, for example, driving of a stepping motor 56 supported by a support member 57. Thereby, as shown by the broken line in FIG. 5, during the rinsing process, the rinsing nozzle 55 moves up to the center of the wafer W accommodated in the cup CP. Further, as shown in FIG. 7, the rinsing nozzle 55 is arranged at a position, for example, at a height t = 15 mm from the surface of the wafer W held by the spin chuck 42 during the rinsing process. In FIG. 5, the rinse nozzle 55 and the like are omitted.
[0041]
The driving of the stepping motor 56 as the moving mechanism of the nozzle scan arm 36 and the moving mechanism of the rinse nozzle arm 54 is electrically controlled by the control unit 40.
[0042]
8 and 9 are a cross-sectional view and a plan view of the rinse nozzle 55 according to the first embodiment. The rinse nozzle 55 is connected via a supply pipe 58 to a rinse liquid supply source 59 including a tank (not shown) for storing the rinse liquid, a pressure pump, and the like. As this rinsing liquid, for example, pure water is used, but a surfactant or the like may be mixed into the pure water in order to lower the surface tension of the pure water from the viewpoint of preventing pattern collapse. A flow path 55a through which the rinsing liquid flows is provided inside the nozzle, and a main hole 55b for discharging the rinsing liquid penetrating from the center of the flow path 55a to the center of the lower end face 55e of the nozzle is provided. Further, around the main hole 55b, for example, eight sub holes 55c having a smaller diameter than the main hole 55b are formed so as to penetrate from the flow path 55a to the lower end face 55e. The diameter of the main hole 55b is, for example, 1.5 mm to 3.0 mm, and preferably 2.0 mm. The diameter of the sub-hole 55c is, for example, 0.2 to 1.0 mm, and preferably 0.4 mm. In FIG. 9, the diameter of a circle indicated by a broken line constituted by eight sub-holes 55c is, for example, 8 mm.
[0043]
By discharging the rinsing liquid onto the wafer W by the rinsing nozzle 55 configured as described above, the liquid discharged from the main hole 55b and the liquid discharged from the sub-hole 55c are mixed, and a disturbance action on the wafer is generated. Can be generated. For example, bubbles can be generated by this disturbing action. Particularly, in the present embodiment, since the size of the main hole 55b and the size of the sub hole 55c are formed differently, the flow rate of the liquid discharged from the sub hole 55c is reduced by the flow rate of the liquid discharged from the main hole 55b. It can be less than the flow rate. As a result, for example, the turbulent liquid flows smoothly from the central portion of the wafer toward the peripheral portion, and the action of removing impurities can be enhanced.
[0044]
The reason why the diameter of the main hole 55b is set as described above is that if the diameter is larger than 3.0 mm, the flow rate of the liquid per unit time becomes too large, and the resist pattern may collapse due to the impact. Because there is. In addition, the reason why the diameter of the sub-hole 55c is set as described above is that if the diameter is set to 1.0 mm or more, the flow rate from the sub-hole 55c becomes too large, and the liquid discharged from the sub-hole 55c also reaches the center of the substrate. The flow and the residence time of the liquid on the substrate become longer. As a result, the impurities are reattached and the removal action is reduced. Specifically, for example, when the flow rate of the rinsing liquid is 1 liter / minute, the flow rate of pure water from the main hole 55b is 500 ml / min to 1000 ml / min, and the flow rate of pure water from the sub hole 55c is The discharge flow rate of water is preferably set to 100 ml / min to 500 ml / min.
[0045]
Next, an example of the processing steps in the coating and developing apparatus 1 configured as described above will be described.
[0046]
First, in the cassette station 10, the wafer carrier 22 accesses the cassette CR containing the unprocessed wafers W on the cassette mounting table 20, and takes out one wafer W from the cassette CR. The wafer W is transferred to the first main transfer device A1 via the transfer / cooling processing unit (TCP), carried into, for example, an adhesion unit (AD) 110, and subjected to a hydrophobic treatment. Next, the wafer is conveyed to, for example, a bottom coating unit (BARC), where an anti-reflection film may be formed in order to prevent reflection of exposure light from the wafer during exposure.
[0047]
Next, the wafer W and the wafer W are carried into a resist coating unit (COT), and a resist film is formed. When the resist film is formed, the wafer W is transferred to the pre-baking unit (PAB) by the first main transfer device A1. Here, first, the wafer W is placed on the temperature adjustment plate C, and the wafer W is moved to the heating plate H side while being adjusted in temperature, and is placed on the heating plate H and subjected to heat treatment. After the heat treatment, the wafer W is transferred again to the first main transfer device A1 via the temperature control plate C. Thereafter, the wafer W is cooled at a predetermined temperature by a cooling processing unit (CPL).
[0048]
Next, the wafer W is taken out by the second main transfer device A2 and transferred to the film thickness inspection device 119 to measure the resist film thickness in some cases. Then, the wafer W is transferred to the exposure apparatus 100 via the transition unit (TRS) in the fifth processing unit section G5 and the interface section 14, and is subjected to exposure processing. When the exposure processing is completed, the wafer W is transferred to the second main transfer apparatus A2 via the interface unit 14 and the transition unit (TRS) in the fifth processing unit G5, and then is transferred to the post-exposure baking unit (PEB). , And subjected to temperature control and heat treatment. After the exposure processing, the wafer W may be temporarily stored in the buffer cassette BR in the interface unit 14 in some cases.
[0049]
Then, the wafer W is transported to a development processing unit (DEV), where the development processing is performed. After this development process, a predetermined heating process (post-baking) may be performed. After the development process, the wafer W is subjected to a predetermined cooling process in a cooling unit (COL), and is returned to the cassette CR via an extension unit (EXT).
[0050]
Next, the operation of the development processing unit (DEV) will be described.
[0051]
First, as shown in FIGS. 10A and 10B, the developing solution is discharged while the developing solution nozzle 53 moves on the stationary wafer W in the direction indicated by the arrow A, and the developing solution is deposited on the wafer W. Can be Then, a developing process is performed for a predetermined time, for example, 60 seconds while the developing solution is applied on the entire surface of the wafer.
[0052]
Then, the rinsing nozzle 55 is arranged at the center position of the wafer W as shown in FIG. 7, and discharges the rinsing liquid. At this time, the rinsing liquid is discharged from the main hole 55b and the sub hole 55c, and is disturbed on the wafer W. The rinsing liquid in the disturbed state diffuses on the wafer and applies stress to impurities such as micelles attached to the wafer by electrostatic force or van der Waals force, thereby removing the impurities. At the same time, the developing solution is washed away by discharging the rinsing solution. At this time, the rinsing liquid may be discharged while rotating the wafer W at, for example, 500 rpm. Thus, the disturbed rinsing liquid flows over the wafer due to the rotational centrifugal force, and the disturbed rinsing liquid increases the kinetic energy and enhances the impurity removing action. In the present embodiment, the flow rate of the rinsing liquid supplied from the rinsing liquid supply source 59 is 1 liter / minute.
[0053]
In addition, since the rinse nozzle 55 of the present embodiment has a configuration in which a plurality of sub-holes 55c are provided around the main hole 55b, the rinsing liquid is discharged from the main hole 55b to the central portion of the wafer W, and the sub-hole 55c is formed therearound. Rinsing liquid can be ejected in a circular shape. Thereby, the rinse liquid in the disturbed state can be uniformly diffused on the wafer W, and the action of removing impurities is improved. This is particularly effective when the wafer is rotated as described above.
[0054]
Furthermore, the rinsing processing of the present embodiment also has the function of washing away the developer as in the related art, and therefore does not increase the processing time.
[0055]
The sub-hole 55c of the rinsing nozzle 55 does not necessarily have to be circular, but may have a long sub-hole 55c as shown in FIG. 11 if the hole is smaller than the main hole 55b. Similarly, the main hole 55b may be rectangular.
[0056]
FIG. 12 is an enlarged cross-sectional view of a lower portion of the rinse nozzle according to the second embodiment. On the lower end surface 55e of the rinse nozzle, an annular groove 55d is formed between the main hole 55b and the sub hole 55c. By providing such a groove 55d, the interference between the liquid discharged from the main hole 55b and the liquid discharged from the sub-hole 55c can be reduced when the rinsing liquid is discharged, as compared with the case where the lower end face 55e is a flat surface. Therefore, a disturbance effect can be reliably generated on the wafer.
[0057]
FIG. 13 is a plan view showing a developing unit (DEV) according to the third embodiment of the present invention. 13, the same components as those in FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted. The rinsing nozzle 75 in the developing unit (DEV) has a long shape and is supported by the rinsing nozzle arm 63. The rinse nozzle arm 63 is provided so as to be movable on the guide rail 44 in the Y direction under the control of the control unit 40, similarly to the nozzle scan arm 36. Thus, the rinsing nozzle 75 is moved to an upper position of the wafer W accommodated in the cup CP.
[0058]
FIGS. 14A and 14B show the rinse nozzle 75, wherein FIG. 14A is a cross-sectional view and FIG. 14B is a plan view. The rinsing nozzle 75 is formed, for example, in a long shape having a length substantially equal to the radius of the wafer, and a buffer chamber 75a for temporarily storing a rinsing liquid therein, and a rinsing liquid discharged from the buffer 75a to the lower end surface thereof. A plurality of holes are provided. These holes have one main hole 55b formed at one end of the nozzle, and the sub-holes 55c other than the main hole 55b have smaller diameters. Thereby, the flow rate of the rinsing liquid discharged from the sub hole 55c can be made smaller than the flow rate from the main hole 55b, and the same effect as in the above-described embodiment can be obtained. In this case, the diameter of the main hole 55b is, for example, 1.5 mm to 3.0 mm, and preferably 2.0 mm. The diameter of the sub-hole 55c is, for example, 0.2 to 1.0 mm, and preferably 0.4 mm. The flow rate during the rinsing process is
As the rinsing liquid, for example, pure water can be used, but a surfactant or the like may be mixed into the pure water in order to lower the surface of the pure water from the viewpoint of preventing pattern collapse.
[0059]
By the rinse nozzle 75 configured as described above, the rinse nozzle 75 is disposed so that the rinse liquid is discharged from the main hole 75b to the center of the wafer W as shown in FIG. 15, for example. By discharging the rinsing liquid from the main hole 75b and the sub-hole 75c while rotating the wafer W, the rinsing liquid is mixed and disturbed on the wafer to remove impurities. By discharging the rinsing liquid from such a long nozzle 75, a disturbance effect can be generated on the entire surface of the wafer in a short time, and the effect of removing impurities can be improved.
[0060]
In the above embodiment, the rinsing nozzle 75 has a long shape having substantially the same length as the radius of the wafer W, but this length is shorter than the radius of the wafer, for example, 40 mm shorter than the radius, and A shape that does not discharge the rinsing liquid may be used. As a result, it is possible to suppress the occurrence of pattern collapse at the periphery of the wafer. This is because the peripheral speed of the peripheral portion of the wafer is higher than that of the central portion, and by preventing the peripheral portion from being discharged, the rinsing liquid discharged to the peripheral portion may damage the wafer surface. It is because it can reduce. Further, generation of mist due to the influence of the peripheral speed of the rinsing liquid discharged to the peripheral portion can be suppressed, and contamination of the wafer surface can be prevented.
[0061]
As shown in FIG. 16, the rinsing nozzle 85 is formed in a long shape having substantially the same length as the diameter of the wafer, and a main hole 85b is provided at the center position of the nozzle. A plurality of 85c may be provided. As a result, the rinsing time for the entire surface of the wafer can be further reduced.
[0062]
Further, the diameter of each sub-hole of the rinse nozzle may be changed. For example, the flow rate of the rinsing liquid discharged from the sub-hole of the rinsing nozzle is changed stepwise by increasing the diameter of the sub-hole near the center of the wafer and decreasing the diameter toward the peripheral portion of the wafer. As a result, it is possible to control the impact of the rinsing liquid on the wafer surface so as to be uniform in accordance with the peripheral speed of the wafer.
[0063]
In FIG. 17, two supply pipes 82A and 82B are connected to the rinsing liquid supply source 59, and pumps 76A and 76B for pumping the rinsing liquid by gas are separately connected to the respective supply pipes. The rinsing liquid supply system to the main hole 75b and the sub hole 75c is separated. In this way, by controlling the pumps 76A and 76B separately to make the discharge pressure different, it is possible to change the flow rate of the rinse liquid to be discharged. As a result, the impact on the wafer surface due to the influence of the peripheral speed of the wafer can be reduced. Such an embodiment can also be applied to the rinse nozzle 85 shown in FIG.
[0064]
FIG. 18 is a graph comparing the incidence rates of precipitation defects when a conventional rinsing nozzle is actually rinsed with the rinsing nozzle 55 according to the first embodiment and the rinsing nozzle 75 according to the third embodiment. is there. Here, the occurrence rate is a ratio of the number of defects when rinsing is performed by each rinsing nozzle according to the present embodiment, when the number of defects generated when rinsing is performed by the conventional rinsing nozzle is 100%. is there. As can be seen from this graph, when the rinse nozzle according to the present embodiment was used, the number of defects was clearly reduced.
[0065]
Next, still another embodiment will be described with reference to FIGS. In FIG. 19, for example, two rinse nozzles 55A and 55B are connected to a rinse liquid supply source 59 via a supply pipe 58. A pump 61 for pumping the rinsing liquid by gas is connected to the supply pipe 58. The rinsing nozzle 55A is provided with, for example, one rinsing liquid discharge hole (not shown), and the rinsing nozzle 55B is provided with a discharge hole for discharging the rinsing liquid, which is smaller than the discharge hole provided in the nozzle 55A. For example, one (not shown) is provided. The rinsing nozzle 55A is arranged on the center of the wafer W, and the rinsing nozzle 55B is arranged outside the substrate from the center. Even with such a configuration, the rinsing liquid is discharged from each of the nozzles 55A and 55B while rotating the wafer W, so that a disturbance action can be efficiently generated and impurities can be removed.
[0066]
In FIG. 20, independent supply pipes 58A and 58B extend from the rinse liquid supply source 59, and the same rinse nozzles 55A and 55B as shown in FIG. 19 are connected to the respective supply pipes 58A and 58B. Separate pressure feed pumps 61A and 61B are installed in the supply pipes 58A and 58B, respectively. In the present embodiment, for example, the separate pumps 61A and 61B may be controlled so that both nozzles have the same discharge pressure or different discharge pressures. This makes it possible to more precisely control the disturbance state such as the bubble generation rate. In addition, independent supply valves may be provided in the supply pipes 58A and 58B so that the discharge timing of both nozzles can be controlled separately.
[0067]
The rinse nozzle 55B in FIGS. 19 and 20 may have a plurality of discharge holes. Further, a mechanism for scanning only the rinse nozzle 55B on the wafer in the radial direction of the wafer may be provided.
[0068]
FIG. 21 is a diagram showing the timing at which the rinse liquid is discharged from the rinse nozzles 55A and 55B in FIGS. 19 and 20. For example, discharging from the nozzle 55A is performed first, and then discharging from the nozzle 55B. The ejection timing is such that the rinsing liquid discharged from the nozzle 55A is diffused at least to the position on the wafer where the rinsing liquid is discharged from the nozzle 55B. Therefore, the timing at which the rinsing liquid is discharged from the nozzle 55B depends on the rotation speed of the wafer, the discharge amount, the distance between the two nozzles, and the like. Thus, by delaying the discharge timing from the nozzle 55B compared to the nozzle 55A, the discharge from the nozzle 55B can be performed after the rinse liquid from the nozzle 55A is diffused. Thereby, the impact on the wafer due to the discharge of the rinsing liquid from the nozzle 55B can be reduced, and the collapse of the pattern can be avoided. In this case, the higher the flow velocity of the nozzle 55B is, the more effective the disturbance effect is.
[0069]
The present invention is not limited to the embodiments described above, and various modifications are possible.
[0070]
For example, in each of the above embodiments, the main hole and the sub hole are provided as the holes for discharging the rinsing liquid, but the diameters of all the holes may be the same without necessarily making the diameters different.
[0071]
Further, the discharge angle of the rinsing liquid with respect to the wafer surface of the main hole and the sub hole may be different. For example, the angle of the sub hole 55c of the nozzle 55 shown in FIG. 8 is formed so as to be closer to the main hole toward the lower end face 55e. Then, the direction in which the rinsing liquid is discharged from the sub-holes is opposite to the direction in which the rinsing liquid discharged from the main holes 55b is diffused from the center of the wafer to the outside on the wafer. Action can be enhanced.
[0072]
Furthermore, it is also possible to implement the configurations disclosed in the above embodiments in combination as appropriate within a reasonable range.
[0073]
【The invention's effect】
As described above, according to the present invention, it is possible to efficiently disturb the developing solution and the rinsing solution and remove impurities such as micelles and insolubles attached to the substrate, and reduce the occurrence of defects on the substrate. Can be.
[Brief description of the drawings]
FIG. 1 is a plan view of a coating and developing apparatus to which the present invention is applied.
FIG. 2 is a front view of the coating and developing apparatus shown in FIG.
FIG. 3 is a rear view of the coating and developing apparatus shown in FIG. 1;
FIG. 4 is a plan view of a developing unit according to the embodiment of the present invention.
5 is a cross-sectional view of the developing unit shown in FIG.
FIG. 6 is a perspective view showing a rinse nozzle movable by a rinse nozzle arm.
FIG. 7 is a side view showing a positional relationship between a rinsing nozzle and a wafer.
FIG. 8 is a cross-sectional view of the rinse nozzle according to the first embodiment.
FIG. 9 is a plan view of the rinse nozzle shown in FIG. 8;
FIG. 10 is a diagram illustrating an operation of supplying a developer.
FIG. 11 is a plan view of a rinse nozzle according to another embodiment.
FIG. 12 is an enlarged sectional view of a rinse nozzle according to a second embodiment.
FIG. 13 is a plan view of a developing unit according to another embodiment.
FIG. 14 is a cross-sectional view and a plan view of a rinse nozzle according to a third embodiment.
FIG. 15 is a plan view showing an operation when performing a rinsing process using the rinsing nozzle shown in FIG. 14;
FIG. 16 is a plan view showing a modification of the rinse nozzle shown in FIG.
FIG. 17 is a view showing a modification of the supply system of the rinse nozzle shown in FIG.
FIG. 18 is a graph comparing the defect occurrence rates when using a conventional and a rinse nozzle according to the present invention.
FIG. 19 is a configuration diagram illustrating a rinsing liquid supply mechanism according to another embodiment.
FIG. 20 is a configuration diagram showing a rinsing liquid supply mechanism according to still another embodiment.
FIG. 21 is a diagram showing a timing at which a rinse liquid is discharged from two rinse nozzles.
[Explanation of symbols]
W. . . Semiconductor wafer
42 ... Spin chuck
43 ... Motor
54 ... Rinse nozzle arm
55, 55A, 55B, 75, 85 ... rinse nozzle
55a ... flow path
55e: Lower end face
55b ... main hole
55c: Secondary hole
55d ... groove

Claims (30)

A holding unit for holding the substrate,
Means for supplying a processing liquid to the substrate held by the holding unit,
A rinsing means for discharging the first liquid and the second liquid to the substrate supplied with the processing liquid to disturb the processing liquid to remove impurities attached to the substrate, and to wash out the processing liquid; A substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, further comprising: means for rotating the substrate, wherein the holding unit discharges the first liquid and the second liquid while rotating the substrate. The substrate processing apparatus according to claim 1,
The rinsing means includes: a first discharge unit having a first hole for discharging the first liquid; and a second discharge unit having a second hole for discharging the second liquid. A substrate processing apparatus comprising a nozzle having: The substrate processing apparatus according to claim 3, wherein
The substrate processing apparatus according to claim 1, wherein a plurality of the second holes are provided around the first hole. The substrate processing apparatus according to claim 4, wherein:
The size of the second hole is smaller than the size of the first hole. The substrate processing apparatus according to claim 5, wherein
The substrate processing apparatus according to claim 1, wherein the diameter of the first hole is 1.5 mm to 3.0 mm, and the diameter of the second hole is 0.2 to 1.0 mm. The substrate processing apparatus according to claim 3, wherein
The substrate processing apparatus according to claim 1, wherein a discharge flow rate of the first liquid is 500 ml / min to 1000 ml / min, and a discharge flow rate of the second liquid is 100 ml / min to 500 ml / min. The substrate processing apparatus according to claim 3, wherein
The substrate processing apparatus according to claim 1, wherein the nozzle includes a groove provided between the first discharge unit and the second discharge unit. The substrate processing apparatus according to claim 3, wherein
A substrate processing apparatus, wherein a discharge direction of the first liquid and a discharge direction of the second liquid are different. The substrate processing apparatus according to claim 1,
The rinsing means,
A first nozzle formed with a first hole for discharging the first liquid,
A second nozzle formed with a second hole for discharging the second liquid. The substrate processing apparatus according to claim 10,
The size of the second hole is smaller than the size of the first hole. The substrate processing apparatus according to claim 11,
The substrate processing apparatus according to claim 1, wherein the second nozzle has a long shape, and a plurality of the second holes are arranged in a row in a longitudinal direction. The substrate processing apparatus according to claim 10,
The substrate processing apparatus according to claim 1, wherein the first nozzle discharges a first liquid to a central portion of the substrate, and the second nozzle discharges a second liquid to the outside of the substrate from the central portion. A holding unit for holding the substrate,
Means for supplying a processing liquid to the substrate held by the holding unit,
It has a long shape, and a first hole and a plurality of second holes are arranged in a row in the longitudinal direction, and the substrate to which the processing liquid is supplied from the first hole and the second hole. A substrate processing apparatus, comprising: a rinsing means for discharging the first liquid and the second liquid to disturb the processing liquid to remove impurities attached to the substrate, and to wash out the processing liquid. . The substrate processing apparatus according to claim 14, wherein
The substrate processing method, wherein the nozzle discharges a first liquid from the first hole to a central portion of the substrate, and discharges a second liquid from the second hole to the outside of the substrate from the central portion. apparatus. The substrate processing apparatus according to claim 14, wherein
The substrate processing apparatus, further comprising: means for rotating the substrate, wherein the holding unit discharges the first liquid and the second liquid while rotating the substrate. The substrate processing apparatus according to claim 14, wherein
The substrate processing apparatus according to claim 1, wherein the diameter of the first hole is 1.5 mm to 3.0 mm, and the diameter of the second hole is 0.2 to 1.0 mm. The substrate processing apparatus according to claim 14, wherein
The substrate processing apparatus according to claim 1, wherein a discharge flow rate of the first liquid is 500 ml / min to 1000 ml / min, and a discharge flow rate of the second liquid is 100 ml / min to 500 ml / min. Supplying a processing liquid to the substrate;
Discharging a first liquid and a second liquid to the substrate supplied with the processing liquid to disturb the processing liquid to remove impurities attached to the substrate, and to wash out the processing liquid. A substrate processing method characterized by the above-mentioned. The substrate processing method according to claim 19,
A substrate processing method, comprising: discharging the first liquid before discharging the second liquid. The substrate processing method according to claim 19,
A method of processing a substrate, comprising: discharging the first liquid to a central portion of the substrate; and discharging the second liquid to the outside of the substrate from the central portion. The substrate processing method according to claim 19,
The substrate processing method according to claim 1, wherein a discharge flow rate of the first liquid is 500 ml / min to 1000 ml / min, and a discharge flow rate of the second liquid is 100 ml / min to 500 ml / min. A nozzle for discharging the first liquid and the second liquid to the substrate to which the processing liquid has been supplied, disturbing the processing liquid, removing impurities attached to the substrate, and washing away the processing liquid,
A first discharge unit having a hole for discharging the first liquid,
A second discharge section having a hole for discharging the second liquid. The nozzle according to claim 23,
A plurality of the second holes are provided around the first hole. The nozzle according to claim 23,
The size of the second hole is smaller than the size of the first hole. The nozzle according to claim 25,
The diameter of the first hole is 1.5 mm to 3.0 mm, and the diameter of the second hole is 0.2 to 1.0 mm. The nozzle according to claim 23,
The nozzle further comprising a groove provided between the first discharge part and the second discharge part. It has a long shape and discharges a first liquid and a second liquid to a substrate to which a processing liquid has been supplied, disturbs the processing liquid, removes impurities attached to the substrate, and rinses the processing liquid. Nozzle for
A first discharge unit having a hole for discharging the first liquid,
A nozzle having a plurality of rows of holes for discharging the second liquid in a longitudinal direction of the elongated shape. 29. The nozzle according to claim 28,
The size of the second hole is smaller than the size of the first hole. The nozzle according to claim 29,
The diameter of the first hole is 1.5 mm to 3.0 mm, and the diameter of the second hole is 0.2 to 1.0 mm.

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