JP2004058221A - Dressing board and method of its manufacture - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dressing board where it is unnecessary to enlarge a plating bath for forming an abrasive grain layer by electrodeposition corresponding to a substrate comprising the dressing board and the desired shape and size of the abrasive grain layer can be provided on the surface of the substrate without arranging a complicated masking on the surface of the substrate and to provide a method of manufacturing the same. <P>SOLUTION: The dressing board is a dressing board which dresses a grinding tool and a dresser chip where the abrasive grain is fixed by the electrodeposition is bonded to the surface of the substrate by a bonding means. The method of manufacturing the dressing board includes an abrasive grain formation process where the abrasive grains are electrodeposited onto the surface of an abrasive layer formation board to form the abrasive grain layer, a dresser chip formation process where the dresser chip is formed by cutting the abrasive grain layer in a suitable shape and a dresser chip mounting process where the dresser chip is bonded onto the surface of the substrate by the bonding means. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a dressing board for dressing a polishing tool for polishing a workpiece such as a semiconductor wafer, and a method for manufacturing the same.
[0002]
[Prior art]
In a semiconductor device manufacturing process, a large number of rectangular regions are partitioned by cutting lines called streets arranged in a grid on the surface of a substantially disk-shaped semiconductor wafer, and a semiconductor circuit is formed in each of the rectangular regions. By separating the semiconductor wafer on which a large number of semiconductor circuits are formed along the streets, individual semiconductor chips are formed. In order to reduce the size and weight of the semiconductor chip, the semiconductor wafer is usually ground to a predetermined thickness by cutting the semiconductor wafer along streets to separate individual rectangular regions. Has formed. Grinding of the back surface of the semiconductor wafer is usually performed by pressing a polishing tool made of a grinding wheel formed by fixing diamond abrasive grains with an appropriate bond such as a resin bond against the back surface of the semiconductor wafer while rotating at a high speed. ing.
[0003]
When the back surface of the semiconductor wafer is ground with a polishing tool made of a polishing stone formed by fixing the above-mentioned diamond abrasive grains with an appropriate bond such as a resin bond, so-called processing strain is generated on the back surface of the semiconductor wafer. As a measure to remove this processing distortion, the present applicant polishes the back surface of the ground semiconductor wafer using a polishing tool made of a felt whetstone in which abrasive grains are dispersed in felt and fixed with an appropriate bonding agent, and the grinding distortion is removed. Was proposed as Japanese Patent Application No. 2001-93397.
[0004]
When the above-mentioned polishing tool is clogged, the grinding performance is deteriorated, so it is necessary to dress the polishing tool from time to time. Particularly, a polishing tool made of a felt whetstone easily causes clogging and needs to be dressed frequently. As a dressing board used for dressing such a polishing tool, a dressing board in which abrasive grains such as diamond are electrodeposited on a predetermined region of a substrate having substantially the same size as the polishing tool to form an abrasive layer is used. .
[0005]
[Problems to be solved by the invention]
Thus, in the above dressing board, if an abrasive layer having a desired shape and size is formed on a predetermined region of the substrate by electrodeposition, a considerable manufacturing cost is required. For example, when polishing a semiconductor wafer having a diameter of 300 mm, the polishing tool also has a size corresponding to the diameter of the semiconductor wafer, and a dressing board for dressing the polishing tool has a size of approximately 300 mm. For this reason, a plating tank for electrodepositing the abrasive layer needs to be large enough to accommodate a dressing board having a diameter of about 300 mm, which causes an increase in cost. In addition, in order to form an abrasive layer having a desired shape and size on the surface of the substrate constituting the dressing board by electrodeposition, complicated masking must be applied to the surface of the substrate, which causes an increase in cost. ing.
[0006]
The present invention has been made in view of the above fact, the main technical problem is that it is not necessary to increase the plating tank for forming the abrasive layer by electrodeposition corresponding to the substrate constituting the dressing board, Another object of the present invention is to provide a dressing board capable of providing an abrasive layer having a desired shape and size on a surface of a substrate without performing complicated masking on the surface of the substrate, and a method of manufacturing the same.
[0007]
[Means for Solving the Problems]
According to the present invention, there is provided a dressing board for dressing a polishing tool.
A dresser chip in which the abrasive grains are fixed by electrodeposition is fixed to the surface of the substrate by fixing means,
A dressing board is provided.
[0008]
Further, according to the present invention, a method of manufacturing a dressing board for dressing a polishing tool,
An abrasive layer forming step of electrodepositing abrasive grains on the surface of the abrasive layer forming plate to form an abrasive layer,
A dresser chip forming step of cutting the abrasive layer into an appropriate shape to form a dresser chip,
Dressing step of fixing the dresser chip to the surface of the substrate by fixing means,
A method of manufacturing a dressing board is provided.
[0009]
In the dresser chip forming step, the abrasive layer may be cut into an appropriate shape together with the abrasive layer, and the abrasive layer may be cut into an appropriate shape after peeling the abrasive layer from the abrasive layer forming plate. May be.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of a dressing board and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.
[0011]
FIG. 1 is a perspective view of a dressing board configured according to the present invention.
The illustrated dressing board 10 includes a disk-shaped substrate 101 and a plurality of dresser chips 102 fixed to the surface of the substrate 101. The substrate 101 is made of stainless steel having a thickness of 0.5 mm in the illustrated embodiment, and has a diameter substantially equal to the diameter of a polishing tool for polishing a workpiece such as a semiconductor wafer. In the illustrated embodiment, the dresser chip 102 includes a circular abrasive grain layer forming plate 102a and an abrasive grain layer 102b formed by electrodepositing diamond abrasive grains on the surface of the abrasive grain layer forming plate 102a. . The dresser chip 102 thus configured is fixed to a predetermined region of the surface of the substrate 101 on the side of the abrasive layer forming plate 102a by a fixing means such as an adhesive or brazing. Thus, the dressing board 10 in which the plurality of dresser chips 102 are fixed to the predetermined region on the surface of the substrate 101 is formed.
[0012]
FIG. 2 shows another embodiment of the dressing board 10 constituted according to the present invention, in which a dresser chip 103 comprises only an abrasive layer 102b. That is, the dresser chip 103 shown in FIG. 2 is formed by peeling the abrasive layer 102b of the dresser chip 102 of FIG. 1 from the abrasive layer forming plate 102a. The dressing board 10 is formed by fixing a plurality of dresser chips 103 composed of only the abrasive layer 102b to a predetermined area on the surface of the substrate 101 by a fixing means such as an adhesive.
[0013]
Next, a method for manufacturing the above-described dressing board 10 will be described.
That is, the method of manufacturing the dressing board 10 according to the present invention includes an abrasive layer forming step of electrodepositing abrasive particles on the surface of the abrasive layer forming plate to form an abrasive layer, and forming the abrasive layer into an appropriate shape. The method includes a dresser chip forming step of cutting and forming a dresser chip, and a dresser chip mounting step of fixing the dresser chip to a surface of the substrate by a bonding means such as an adhesive or brazing.
In the abrasive layer forming step, as shown in FIG. 3, an abrasive layer is formed on the surface of the abrasive layer forming plate 102a by electroforming. That is, the abrasive layer forming step is performed in a plating tank 200 containing a plating solution in which diamond abrasive having a particle size of 50 to 300 μm is mixed in a nickel sulfate solution. An object mounting table 201 made of a conductive material is disposed at the bottom of the plating tank 200, and the abrasive layer forming plate 100 a is mounted on the object mounting table 201. In the illustrated embodiment, the abrasive grain layer forming plate 100a is made of a conductive material such as stainless steel and has a thickness of 0.5 mm, and is formed into a square of 200 mm square. After the abrasive layer forming plate 100a is placed on the workpiece mounting table 201, a plating metal, for example, a nickel (Ni) rod 202 disposed in the plating tank 200 is connected to a plus (+) electrode of a DC power supply 203. Then, the workpiece mounting table 201 on which the abrasive layer forming plate 100 is mounted is connected to a minus (-) electrode of a DC power supply 203 to perform nickel plating. As a result, an abrasive layer 100b is formed on the surface of the abrasive layer forming plate 100a, as shown in FIG. In addition, the thickness of the abrasive layer 100b may be about 100 to 1000 μm.
[0014]
When the abrasive layer 100b is formed on the surface of the abrasive layer forming plate 100a by the above-described abrasive layer forming step, a dresser chip forming step of cutting the abrasive layer 100b into an appropriate shape to form a dresser chip is performed. I do. That is, the abrasive grain layer forming plate 100a is cut into an appropriate shape and size by a suitable cutting means such as a laser beam together with the abrasive grain layer 100b on the surface, and as shown in FIG. A dresser chip 102 having an abrasive layer 102b formed by electrodepositing diamond abrasive particles is formed. The dresser tip 102 shown in FIG. 5 includes an abrasive layer forming plate 102a and an abrasive layer 102b formed on the surface of the abrasive layer forming plate 102a, but only the abrasive layer 102b as shown in FIG. Can be formed. In this case, after the abrasive layer 100b formed on the surface of the above-described abrasive layer forming plate 100a is separated from the abrasive layer forming plate 100a, an appropriate shape is formed by an appropriate cutting unit such as a laser beam as described above, Cut to size.
[0015]
In addition, when forming the dresser chip 102 which can be composed of the abrasive grain layer forming plate 102a and the abrasive grain layer 102b as shown in FIG. 5, it is necessary to firmly fix the abrasive grain layer 102b to the abrasive grain layer forming plate 102a. Therefore, it is desirable that the surface of the abrasive grain layer forming plate 102a used in the above-described abrasive grain layer forming step is roughened with hydrochloric acid or the like to form a rough surface. On the other hand, as shown in FIG. 6, when forming the dresser chip 103 composed of only the abrasive layer 102b, the abrasive layer 100b formed on the surface of the abrasive layer forming plate 100a is peeled off from the abrasive layer forming plate 100a. Therefore, it is desirable that the surface of the abrasive layer forming plate 102a used in the above-described abrasive layer forming step be formed in a mirror surface.
[0016]
When the dresser chip 102 or 103 having an appropriate shape and size is formed in the above-described dresser chip forming step, the dresser chip 102 or 103 is mounted on the substrate 101 as shown in FIG. 1 or FIG. That is, the dressing board 10 is formed by fixing the dresser chip 102 or 103 to the surface of a substrate 101 made of, for example, stainless steel having a thickness of 0.5 mm and a diameter of 300 mm with an adhesive or a fixing means such as brazing.
[0017]
As described above, according to the method of manufacturing the dressing board in the illustrated embodiment, since the abrasive grains such as diamond are not directly electrodeposited on the substrate 101 constituting the dressing board 10, plating having a size capable of accommodating the dressing board is performed. A bath is not required, and the abrasive layer 100b formed on the surface of the abrasive layer forming plate 100a is cut into an appropriate shape and size by an appropriate cutting means such as a laser beam to form the dresser chip 102 or 103. In addition, since it is arranged and fixed on the substrate 101 in a desired layout, a complicated masking process becomes unnecessary. As described above, according to the method for manufacturing a dressing board in the illustrated embodiment, a plating tank having a size capable of accommodating the dressing board is not required, and a complicated masking process is not required, so that productivity is improved. At the same time, cost can be reduced.
[0018]
Next, a usage example of the above-mentioned dressing board 10 will be described with reference to FIGS.
FIG. 7 is a perspective view of a polishing apparatus for appropriately dressing a polishing tool by the above-mentioned dressing board 10.
The polishing apparatus comprises an apparatus housing, generally designated by the numeral 2. The device housing 2 has a rectangular main body 21 that is elongated and an upright wall 22 that is provided at a rear end (upper right end in FIG. 1) of the main part 21 and extends substantially vertically upward. I have. A pair of guide rails 221 and 221 extending in the vertical direction are provided on the front surface of the upright wall 22. The polishing unit 3 is mounted on the pair of guide rails 221 and 221 so as to be vertically movable.
[0019]
The polishing unit 3 includes a moving base 31 and a spindle unit 32 mounted on the moving base 31. The movable base 31 is formed with guided grooves 311 and 311 slidably engaged with the pair of guide rails 221 and 221. As described above, a support portion 312 protruding forward is provided on the front surface of the movable base 31 slidably mounted on the pair of guide rails 221 and 221 provided on the upright wall 22. The spindle unit 32 is attached to the support 312.
[0020]
The spindle unit 32 includes a spindle housing 321 mounted on the support 312, a rotary spindle 322 rotatably disposed on the spindle housing 321, and a servomotor as a drive source for driving the rotary spindle 322 to rotate. 323. The lower end of the rotary spindle 322 projects downward beyond the lower end of the spindle housing 321, and a disk-shaped tool mounting member 324 is provided at the lower end. A plurality of bolt insertion holes (not shown) are formed in the tool mounting member 324 at intervals in the circumferential direction. A polishing tool 325 is mounted on the lower surface of the tool mounting member 324. As shown in FIGS. 8 and 9, the polishing tool 325 includes a disk-shaped support member 326 and a disk-shaped polishing member 327. The support member 326 has a plurality of blind screw holes 326a extending downward from the upper surface thereof at intervals in the circumferential direction. The lower surface of the support member 326 forms a circular support surface, and the polishing member 327 is joined to the circular support surface of the support member 326 by an appropriate adhesive such as an epoxy resin adhesive. As the polishing member 327, in the illustrated embodiment, a felt grindstone in which abrasive grains are dispersed in felt and fixed with an appropriate bonding agent is used. The detailed description of the configuration of the polishing member 327 itself made of the felt whetstone has been described in detail in the specification and drawings of Japanese Patent Application No. 2001-93397 already proposed by the present applicant, so that the description will be left to this description. The description is omitted in this document. The polishing tool 325 is positioned on the lower surface of the tool mounting member 324 fixed to the lower end of the rotary spindle 322, and a blind screw formed on the support member 326 of the polishing tool 325 through a through hole formed in the tool mounting member 324. By screwing the fastening bolt 328 into the hole 326a, the polishing tool 325 is mounted on the tool mounting member 324.
[0021]
Returning to FIG. 7, the polishing apparatus in the illustrated embodiment moves the polishing unit 3 vertically along the pair of guide rails 221 and 221 (in a direction perpendicular to a mounting surface of a chuck table described later). ) Is provided. The polishing unit feed mechanism 4 includes a male screw rod 41 disposed on the front side of the upright wall 22 and extending substantially vertically. The male screw rod 41 is rotatably supported at its upper end and lower end by bearing members 42 and 43 attached to the upright wall 22. The upper bearing member 42 is provided with a pulse motor 44 as a drive source for rotationally driving the male screw rod 41, and the output shaft of the pulse motor 44 is operatively connected to the male screw rod 41. A connecting portion (not shown) projecting rearward from the center portion in the width direction is also formed on the rear surface of the movable base 31, and a penetrating female screw hole extending in the vertical direction is formed in this connecting portion. The male screw rod 41 is screwed into the female screw hole. Therefore, when the pulse motor 44 rotates forward, the moving base 31, ie, the polishing unit 3, is lowered or moved forward, and when the pulse motor 44 rotates reversely, the moving base 31, ie, the polishing unit 3 is raised, ie, moved backward.
[0022]
Referring to FIG. 7, a substantially rectangular recess 211 is formed on the rear half of the main portion 21 of the housing 2, and the chuck table mechanism 5 is disposed in the recess 211. ing. The chuck table mechanism 5 includes a support base 51 and a disk-shaped chuck table 52 rotatably disposed on the support base 51. The support base 51 is slidably mounted on a pair of guide rails (not shown) that extend in the front-rear direction (the direction perpendicular to the front surface of the upright wall 22) in the directions indicated by arrows 23 a and 23 b on the immersion portion 211. The work table loading / unloading area 24 and the polishing area 25 facing the polishing member 327 of the polishing tool 325 constituting the spindle unit 32 are moved in a direction indicated by arrows 23a and 23b by a chuck table moving mechanism (not shown). Moved between. The support base 51 is reciprocated in the polishing area 25 by a chuck table moving mechanism (not shown). The chuck table 52 is made of an appropriate porous material such as porous ceramics, and is connected to suction means (not shown). Therefore, by selectively communicating the chuck table 52 with suction means (not shown), the workpiece placed on the upper surface is suction-held.
[0023]
On both sides in the moving direction of the support base 51 constituting the chuck table mechanism 5, as shown in FIG. 1, a bellows means 53 having an inverted channel shape in cross section and covering a chuck table moving mechanism (not shown) 54 is attached. Bellows means 53 and 54 can be formed from any suitable material such as campus cloth. The front end of the bellows means 53 is fixed to the front wall of the immersion part 211, and the rear end is fixed to the front end face of the support base 51 of the chuck table mechanism 5. The front end of the bellows means 54 is fixed to the rear end surface of the support base 51 of the chuck table mechanism 5, and the rear end is fixed to the front surface of the upright wall 22 of the apparatus housing 2. When the chuck table mechanism 5 is moved in the direction indicated by the arrow 23a, the bellows means 53 is extended and the bellows means 54 is contracted. When the chuck table mechanism 5 is moved in the direction indicated by the arrow 23b, the bellows means is moved. 53 is contracted and the bellows means 54 is extended.
[0024]
7, the first cassette 6, the second cassette 7, the workpiece temporary placing means 8, the cleaning means, and the like are provided on the first half of the main part 21 of the apparatus housing 2. 9, a workpiece transporting means 11, a workpiece loading means 12 and a workpiece unloading means 13 are provided. The first cassette 6 includes a plurality of storage shelves, stores workpieces before polishing, and is placed in a cassette loading area in the main part 21 of the apparatus housing 2. In addition, the above-mentioned dressing boards 10 are accommodated at predetermined stages in the plurality of accommodation shelves of the first cassette 6. The second cassette 7 also has a plurality of storage shelves, is placed in a cassette unloading area in the main part 21 of the apparatus housing 2, and stores the workpiece after polishing and the dressing board 10. The workpiece temporary placing means 8 is disposed between the first cassette 6 and the workpiece loading / unloading area 24, and temporarily places the workpiece before polishing. The cleaning means 9 is provided between the workpiece loading / unloading area 24 and the second cassette 7, and cleans the workpiece after polishing. The workpiece transfer means 11 is disposed between the first cassette 6 and the second cassette 7, and temporarily places the workpiece and the dressing board 10 stored in the first cassette 6 on the workpiece. The workpiece and the dressing board 10 which have been carried out to the means 8 and cleaned by the cleaning means 9 are conveyed to the second cassette 7. The workpiece loading means 12 is disposed between the workpiece temporary mounting means 8 and the workpiece loading / unloading area 24, and is placed on the workpiece temporary loading means 8 before polishing. The workpiece and the dressing board 10 are transported onto the chuck table 52 of the chuck table mechanism 5 positioned in the workpiece loading / unloading area 24. The workpiece carrying-out means 13 is disposed between the workpiece carrying-in / out area 24 and the cleaning means 9, and is polished on the chuck table 52 positioned in the workpiece carrying-in / out area 24. The processed workpiece and the dressing board 10 are transported to the cleaning means 9.
[0025]
The workpiece accommodated in the first cassette 6 is a semiconductor wafer having a front surface mounted on an annular frame via a protective tape (accordingly, the semiconductor wafer has a rear surface located on the upper side), or a support substrate (sub-sub). The semiconductor wafer may be a semiconductor wafer having a front side mounted on a straight) (therefore, the back side of the semiconductor wafer is positioned on the upper side). The first cassette 6 containing such a semiconductor wafer as a workpiece is placed in a predetermined cassette loading area in the main portion 21 of the apparatus housing 2. When all of the unpolished semiconductor wafers contained in the first cassette 6 placed in the cassette carry-in area are unloaded, a new cassette containing a plurality of semiconductor wafers is used instead of the empty cassette 6. 6 is manually placed in the cassette loading area. On the other hand, when a predetermined number of polished semiconductor wafers are loaded into the second cassette 7 placed in a predetermined cassette unloading area in the main portion 21 of the apparatus housing 2, the second cassette 7 is manually moved. It is carried out and a new empty second cassette 7 is placed.
[0026]
Next, the processing operation of the above-described polishing apparatus will be briefly described.
The semiconductor wafer as a workpiece before polishing housed in the first cassette 6 is transported by the vertical movement and the forward / backward movement of the workpiece transporting means 11 and is placed on the workpiece temporary mounting means 8. . The semiconductor wafer placed on the workpiece temporary placement means 8 is positioned in the workpiece loading / unloading area 24 by the turning operation of the workpiece loading means 12 after centering is performed here. It is mounted on the chuck table 52 of the chuck table mechanism 5. The workpiece placed on the chuck table 52 is suction-held on the chuck table 52 by suction means (not shown).
[0027]
When the semiconductor wafer is sucked and held on the chuck table 52, the chuck table moving mechanism (not shown) is operated to move the chuck table mechanism 5 in the direction indicated by the arrow 23a, and to position the polishing area 25 at the polishing start position. At a polishing start position of the polishing area 25, the chuck table 52 holding the semiconductor wafer is rotated at, for example, about 300 rpm, the servo motor 323 is driven to rotate the polishing tool 325 at 4000 to 7000 rpm, and the polishing unit is rotated. The pulse motor 44 of the feed mechanism 4 is driven to rotate forward to lower or move the polishing unit 3 forward. Then, the polishing member 327 of the polishing tool 325 is pressed against the back surface of the semiconductor wafer on the chuck table 52 with a predetermined load. Next, a chuck table moving mechanism (not shown) is operated in one direction to move the chuck table mechanism 5 in a direction indicated by an arrow 23a to a predetermined polishing end position. At this time, the moving speed of the chuck table mechanism 5 is set to, for example, 100 to 200 mm / min. When the chuck table 52 moves to the polishing end position, the chuck table moving mechanism (not shown) is operated in the other direction to move the chuck table mechanism 5 in the direction shown by the arrow 23b to return to the polishing start position, and the above operation is repeated. Execute. By performing this grinding operation for a preset time or a predetermined number of reciprocating movements of the chuck table mechanism 5, the back surface of the semiconductor wafer is dry-polished by a predetermined amount by the action of the polishing member 327, and residual processing distortion is removed. Is done.
[0028]
When the polishing is completed as described above, the polishing tool 325 is separated upward from the back surface of the semiconductor wafer, and the chuck table mechanism 5 is moved to the workpiece loading / unloading area 24 in the direction indicated by the arrow 23b. Thereafter, the suction holding of the polished semiconductor wafer on the chuck table 52 is released, and the semiconductor wafer released from the suction holding is carried out by the work carrying-out means 13 and conveyed to the cleaning means 9. The semiconductor wafer transported to the cleaning means 9 is stored in a predetermined position of the second cassette 7 by the workpiece transport means 11 after being cleaned here.
[0029]
In the above-described polishing apparatus, the polishing powder adheres to the polishing surface of the polishing member 327 constituting the polishing tool 325 during polishing, causing clogging. The clogged polishing member 327 needs to be dressed. For this reason, as described above, the dressing boards 10 are stored in the plurality of storage shelves of the first cassette 6 at predetermined stages. Therefore, when the predetermined number of semiconductor wafers are polished as described above, the dressing boards 10 stored in the predetermined storage shelves of the first cassette 6 are moved to the workpiece loading / unloading area 24 similarly to the above-described semiconductor wafer. It is placed on the chuck table 52 of the positioned chuck table mechanism 5. The dressing board 10 placed on the chuck table 52 is suction-held on the chuck table 52 by suction means (not shown).
[0030]
When the dressing board 10 is suction-held on the chuck table 52 as described above, the chuck table moving mechanism (not shown) is operated to move the chuck table mechanism 5 in the direction indicated by the arrow 23a, and the polishing of the polishing area 25 is started. Position. Then, the chuck table 52 holding the dressing board 10 by suction is rotated at, for example, about 300 rpm, the servo motor 323 is driven to rotate the polishing tool 325 at 4000 to 7000 rpm, and the pulse motor 44 of the polishing unit feed mechanism 4 is rotated. To drive the polishing unit 3 downward or forward. Then, the polishing member 327 of the polishing tool 325 is pressed against the upper surface of the dressing board 8 on the chuck table 52 with a predetermined load. As a result, the polishing surface of the polishing member 327 constituting the polishing tool 325 rotating while being pressed against the upper surface of the dressing board 10 with a predetermined load is dressed by the abrasive layer 102b of the dressing board 10.
[0031]
When the dressing of the polishing surface of the polishing member 327 constituting the polishing tool 325 is completed as described above, the pulse motor 44 of the polishing unit feed mechanism 4 is driven in reverse to raise the polishing unit 3 and the servo motor 323. Of the polishing tool 325 is stopped. Then, the rotation of the chuck table 52 is stopped, and the chuck table mechanism 5 is moved to the workpiece loading / unloading area 24 in the direction indicated by the arrow 23b. Thereafter, the suction holding of the dressing board 10 on the chuck table 52 is released, and the dressing board 10 from which the suction holding is released is carried out by the workpiece carrying means 13 and conveyed to the cleaning means 9. The dressing board 10 transported to the cleaning means 9 is stored in a predetermined position of the second cassette 7 by the workpiece transport means 11 after or without cleaning here.
[0032]
As described above, in the illustrated embodiment, an example in which the dressing board 10 dresses the polishing tool 325 provided with the polishing member 327 made of a felt whetstone has been described. The present invention can be applied to dressing of a polishing tool constituted by various grindstones such as a grindstone, an electroformed grindstone, and an electrodeposited grindstone. In the illustrated embodiment, the dressing board 10 is accommodated in the first cassette 6 and dressing is automatically performed during the polishing operation. However, the dressing board 10 is manually attached to and detached from the chuck table. You may.
[0033]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to the dressing board and its manufacturing method according to the present invention, since the abrasive grains such as diamond are not directly electrodeposited on the substrate constituting the dressing board, a plating tank large enough to accommodate the dressing board becomes unnecessary, and The abrasive layer formed on the surface of the particle layer forming plate is cut into an appropriate shape and size by an appropriate cutting means such as a laser beam to form a dresser chip, and is arranged and fixed on a substrate in a desired layout. Therefore, complicated masking processing is not required. As described above, according to the method for manufacturing a dressing board in the illustrated embodiment, a plating tank having a size capable of accommodating the dressing board is not required, and a complicated masking process is not required, so that productivity is improved. At the same time, cost can be reduced.
[Brief description of the drawings]
FIG. 1 is a perspective view showing one embodiment of a dressing board configured according to the present invention.
FIG. 2 is a perspective view showing another embodiment of a dressing board configured according to the present invention.
FIG. 3 is an explanatory view showing an abrasive layer forming step in the dressing board manufacturing method according to the present invention.
FIG. 4 is a perspective view showing a state in which abrasive grains are electrodeposited on the surface of the abrasive grain layer forming plate to form an abrasive grain layer in the abrasive grain layer forming step shown in FIG. 3;
FIG. 5 is a perspective view showing an embodiment in which the abrasive layer formed on the surface of the abrasive layer forming plate is cut by the dresser chip forming step in the dressing board manufacturing method according to the present invention.
FIG. 6 is a perspective view showing another embodiment in which the abrasive layer formed on the surface of the abrasive layer forming plate is cut by the dresser chip forming step in the dressing board manufacturing method according to the present invention.
FIG. 7 is a perspective view showing an embodiment of a polishing apparatus for performing dressing of a polishing tool using a dressing board according to the present invention.
FIG. 8 is a perspective view showing a polishing tool used in the polishing apparatus shown in FIG. 7;
FIG. 9 is a perspective view showing a state in which the polishing tool shown in FIG. 7 is viewed from the lower surface side;
[Explanation of symbols]
2: Device housing
3: Polishing unit
31: Moving base
32: Spindle unit
321: spindle housing
322: rotating spindle
323: Servo motor
324: Tool mounting member
325: Polishing tool
326: Supporting member
327: Polishing member
4: Polishing unit feed mechanism
44: Pulse motor
5: Chuck table mechanism
51: Support base
52: Chuck table
53, 54: bellows means
6: First cassette
7: Second cassette
8: Workpiece temporary placement means
9: Cleaning means
11: Workpiece conveying means
12: Workpiece loading means
13: Workpiece unloading means
10: Dressing board
101: disk-shaped substrate
102, 103: Dresser tip
102a: abrasive layer forming plate
102b: abrasive layer
200: plating tank
201: Workpiece mounting table
202: Nickel (Ni) rod
203: DC power supply

Claims (4)

A dressing board for dressing a polishing tool,
A dresser chip in which the abrasive grains are fixed by electrodeposition is fixed to the surface of the substrate by fixing means,
A dressing board characterized by that: A method of manufacturing a dressing board for dressing a polishing tool,
An abrasive layer forming step of electrodepositing abrasive grains on the surface of the abrasive layer forming plate to form an abrasive layer,
A dresser chip forming step of cutting the abrasive layer into an appropriate shape to form a dresser chip,
Dressing step of fixing the dresser chip to the surface of the substrate by fixing means,
A method for manufacturing a dressing board. The method for manufacturing a dressing board according to claim 2, wherein in the dresser chip forming step, the abrasive grain layer forming plate is cut into an appropriate shape together with the abrasive grain layer. The method for manufacturing a dressing board according to claim 2, wherein in the dressing chip forming step, the abrasive layer is cut into an appropriate shape after peeling the abrasive layer from the abrasive layer forming plate.

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