JP2003512526A5 - - Google Patents
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- JP2003512526A5 JP2003512526A5 JP2001532257A JP2001532257A JP2003512526A5 JP 2003512526 A5 JP2003512526 A5 JP 2003512526A5 JP 2001532257 A JP2001532257 A JP 2001532257A JP 2001532257 A JP2001532257 A JP 2001532257A JP 2003512526 A5 JP2003512526 A5 JP 2003512526A5
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- JP
- Japan
- Prior art keywords
- winding
- tap
- transformer
- substrate
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004804 winding Methods 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 210000002381 Plasma Anatomy 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 241000255925 Diptera Species 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Description
【特許請求の範囲】
【請求項１】 基板に用いる改良スパッタリングシステムであって、
ａ．プラズマが内部に確立されるチャンバと、
ｂ．該プラズマに電力を供給する交流電源と、
ｃ．第一の巻線および第二の巻線を有する変圧器と、
ｄ．該変圧器の該第二の巻線に応答する第二のタップと、
ｅ．該チャンバ内に配置され、スパッタリングプロセス用の材料を有するターゲットと、
ｆ．該ターゲットからの該材料によって影響を受けるように、該チャンバ内に配置された基板であって、カソードとしての機能を果たす基板と
を含む、システム。
【請求項２】 前記ターゲットはカソードを含み、前記チャンバ内に配置されたアノードをさらに含む、請求項１に記載の基板に用いる改良スパッタリングシステム。
【請求項３】 前記変圧器の前記第二の巻線に応答する前記第二のタップは、カソードの接続を有する、請求項１に記載の基板に用いる改良スパッタリングシステム。
【請求項４】 前記第二の巻線は電気端部を有し、前記アノードは、少なくとも二つのアノードを含み、該第二の巻線の該電気端部はそれぞれ、該アノードのうちの一つに接続された、請求項３に記載の基板に用いる改良スパッタリングシステム。
【請求項５】 前記変圧器の前記第二の巻線に応答する前記第二のタップは、中央のタップを含む、請求項４に記載の基板に用いる改良スパッタリングシステム。
【請求項６】 前記変圧器の前記第二の巻線に応答する前記第二のタップは、基板の接続を含む、請求項１に記載の基板に用いる改良スパッタリングシステム。
【請求項７】 前記変圧器の前記第二の巻線に応答する前記第二のタップは、中央のタップを含む、請求項６に記載の基板に用いる改良スパッタリングシステム。
【請求項８】 前記ターゲットは、少なくとも二つのターゲットを含み、前記第二の巻線は電気端部を有し、該第二の巻線の該電気端部はそれぞれ、該ターゲットのうちの一つに接続された、請求項６に記載の基板に用いる改良スパッタリングシステム。
【請求項９】 前記変圧器の前記第二の巻線に応答する前記第二のタップは、基板の接続をさらに含む、請求項３に記載の基板に用いる改良スパッタリングシステム。
【請求項１０】 前記変圧器の前記第二の巻線に応答する前記第二のタップは、中央のタップを含む、請求項９に記載の基板に用いる改良スパッタリングシステム。
【請求項１１】 前記ターゲットは、少なくとも二つのターゲットを含み、前記第二の巻線は電気端部を有し、該第二の巻線の該電気端部はそれぞれ、該ターゲットのうちの一つに接続される、請求項１０に記載の基板に用いる改良スパッタリングシステム。
【請求項１２】 基板の改良されたスパッタリング方法であって、
ａ．チャンバ内にプラズマを確立する工程と、
ｂ．該チャンバに電力を印加する際に、第一の巻線および第二の巻線を有する変圧器を利用する工程と、
ｃ．該変圧器の該第二の巻線のタップにスパッタリングに関連した表面を接続する工程と、
ｄ．該チャンバ内の材料をスパッタリングする工程と
を包含し、該変圧器の該第二の巻線のタップにスパッタリングに関連した表面を接続する工程は、該変圧器の該第二の巻線のタップにカソードを接続する工程を包含する、方法。
【請求項１３】 前記変圧器の前記第二の巻線のタップにカソードを接続する工程は、該変圧器の該第二の巻線のタップに基板を接続する工程を包含する、請求項１２に記載の基板の改良されたスパッタリング方法。
[Claims]
An improved sputtering system for use on a substrate, comprising:
a. A chamber in which the plasma is established;
b. An AC power supply for supplying power to the plasma;
c. A transformer having a first winding and a second winding;
d. A second tap responsive to the second winding of the transformer;
e. A target disposed in the chamber and having a material for a sputtering process;
f. As affected by material from the target, a substrate disposed within the chamber, and a substrate which serves as a cathode, the system.
Wherein said target includes mosquitoes cathode further comprises arranged anode in the chamber, improved sputtering system used for the substrate according to claim 1.
3. The improved sputtering system for use with a substrate according to claim 1 , wherein said second tap responsive to said second winding of said transformer has a cathode connection.
Wherein said second winding has an electric end, said anode comprises at least two anodes, respectively, the electrical end of said second winding, one of the anode An improved sputtering system for use with a substrate according to claim 3 , connected to one another.
Wherein said second tap includes a central tap, improved sputtering system used for the substrate of claim 4, responsive to said second winding of the transformer.
Wherein said second tap, including a connection of the substrate, improved sputtering system used for the substrate of claim 1, responsive to said second winding of the transformer.
Wherein said second tap includes a central tap, improved sputtering system used for the substrate according to claim 6 responsive to said second winding of the transformer.
Wherein said target includes at least two targets, the second winding has an electric end, each electrical end of the second winding, one of the target An improved sputtering system for use with a substrate according to claim 6 , connected to one another.
Wherein said second tap responsive to said second winding of said transformer further includes a connection board, improved sputtering system used for the substrate according to claim 3.
Wherein said second tap includes a central tap, improved sputtering system used for the substrate according to claim 9, responsive to said second winding of the transformer.
Wherein said target includes at least two targets, the second winding has an electric end, each electrical end of the second winding, one of the target An improved sputtering system for use with a substrate according to claim 10 , wherein the system is connected to one.
12. An improved method of sputtering a substrate, comprising:
a. Establishing a plasma in the chamber;
b. Utilizing a transformer having a first winding and a second winding when applying power to the chamber;
c. Connecting a surface associated with sputtering to the tap of the second winding of the transformer;
d. Sputtering the material in the chamber;
Connecting the sputtering related surface to the tap of the second winding of the transformer comprises connecting a cathode to the tap of the second winding of the transformer. Method.
13. step of connecting the cathode to the tap of the second winding of the transformer includes the step of connecting the substrate to the tap of the transformer of the second winding, according to claim 12 3. An improved method for sputtering a substrate according to claim 1.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15989699P | 1999-10-15 | 1999-10-15 | |
| US60/159,896 | 1999-10-15 | ||
| PCT/US2000/028482 WO2001029278A1 (en) | 1999-10-15 | 2000-10-13 | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003512526A JP2003512526A (en) | 2003-04-02 |
| JP2003512526A5 true JP2003512526A5 (en) | 2007-11-22 |
Family
ID=22574565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001532257A Pending JP2003512526A (en) | 1999-10-15 | 2000-10-13 | Method and apparatus for biasing a substrate in a multiple electrode sputtering system |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1235947A4 (en) |
| JP (1) | JP2003512526A (en) |
| KR (1) | KR20020040875A (en) |
| WO (1) | WO2001029278A1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6818103B1 (en) | 1999-10-15 | 2004-11-16 | Advanced Energy Industries, Inc. | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
| US7179350B2 (en) * | 2003-05-23 | 2007-02-20 | Tegal Corporation | Reactive sputtering of silicon nitride films by RF supported DC magnetron |
| US8691057B2 (en) | 2008-03-25 | 2014-04-08 | Oem Group | Stress adjustment in reactive sputtering |
| DE102008060838A1 (en) | 2008-12-05 | 2010-06-10 | Zounek, Alexis, Dr. | Coating substrates, comprises generating plasma with positively charged ion that is accelerated on substrate by negative bias potential, and reducing and/or compensating positive loading of substrate by irradiating substrate with electron |
| US8482375B2 (en) | 2009-05-24 | 2013-07-09 | Oem Group, Inc. | Sputter deposition of cermet resistor films with low temperature coefficient of resistance |
| RU2540318C2 (en) * | 2013-03-18 | 2015-02-10 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") | Apparatus for ion-plasma etching and depositing thin films |
| RU2562568C2 (en) * | 2013-06-18 | 2015-09-10 | Виталий Степанович Гончаров | Installation for vacuum ion-plasma application of coatings |
| JP6516950B1 (en) * | 2017-06-27 | 2019-05-22 | キヤノンアネルバ株式会社 | Plasma processing system |
| SG11201912564VA (en) | 2017-06-27 | 2020-01-30 | Canon Anelva Corp | Plasma processing apparatus |
| JP6457707B1 (en) | 2017-06-27 | 2019-01-23 | キヤノンアネルバ株式会社 | Plasma processing equipment |
| CN110800375B (en) | 2017-06-27 | 2021-12-28 | 佳能安内华股份有限公司 | Plasma processing apparatus |
| TWI745813B (en) | 2017-06-27 | 2021-11-11 | 日商佳能安內華股份有限公司 | Plasma processing device |
| JP6688440B1 (en) | 2018-06-26 | 2020-04-28 | キヤノンアネルバ株式会社 | Plasma processing apparatus, plasma processing method, program and memory medium |
| KR102512057B1 (en) * | 2020-12-29 | 2023-03-20 | 주식회사 더블유에스지 | Manufacturing method of steel pipe including non-contact electrolytic polishing process, steel pipe manufactured therefrom |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4693805A (en) * | 1986-02-14 | 1987-09-15 | Boe Limited | Method and apparatus for sputtering a dielectric target or for reactive sputtering |
| DE4042287C2 (en) * | 1990-12-31 | 1999-10-28 | Leybold Ag | Device for reactive dusting of electrically insulating material |
| US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
| US5512164A (en) * | 1993-06-03 | 1996-04-30 | The United States Of America As Represented By The United States Department Of Energy | Method for sputtering with low frequency alternating current |
| US5882492A (en) * | 1996-06-21 | 1999-03-16 | Sierra Applied Sciences, Inc. | A.C. plasma processing system |
| US5897753A (en) * | 1997-05-28 | 1999-04-27 | Advanced Energy Industries, Inc. | Continuous deposition of insulating material using multiple anodes alternated between positive and negative voltages |
| DK0908535T3 (en) * | 1997-10-08 | 2003-11-10 | Cockerill Rech & Dev | Method of decapitating a substrate and plant for carrying out the method |
-
2000
- 2000-10-13 WO PCT/US2000/028482 patent/WO2001029278A1/en active Application Filing
- 2000-10-13 JP JP2001532257A patent/JP2003512526A/en active Pending
- 2000-10-13 EP EP00970916A patent/EP1235947A4/en not_active Withdrawn
- 2000-10-13 KR KR1020027004818A patent/KR20020040875A/en not_active Application Discontinuation
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