JP2003318333A - Hybrid integrated circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the warpage of a hybrid integrated circuit device 10 and the separation of a metal base board 16 from an insulating resin 12. <P>SOLUTION: Grooves 13 are formed on the upper surface of the insulating resin 12 along the length direction of the metal base board 16. According to this method, the generation of warpage in the metal base board 16 can be prevented even when bending stress is applied in a direction wherein the grooves 13 are formed. The metal base board 16 is molded with the insulating resin 12 while setting the sag surfaces 16B of the board 16 downward. According to this constitution, the insulating resin 12 is turned around the circumference of the sag surfaces 16B whereby a bonding force between the metal base board 16 and the insulating resin is improved. Accordingly, the separation of the metal base board 16 from the insulating resin 12 can be prevented. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to a hybrid integrated circuit device capable of preventing the hybrid integrated circuit device from bending.

[0002]

2. Description of the Related Art The structure of a conventional hybrid integrated circuit device will be described with reference to FIG. FIG. 5A shows a hybrid integrated circuit device 3
5 is a perspective view of FIG. 0, and FIG. 5 (B) is XX of FIG. 5 (A).
It is sectional drawing in a line.

Referring to FIGS. 5 (A) and 5 (B),
The conventional hybrid integrated circuit device 30 has the following configuration. A rectangular substrate 36, a conductive pattern 38 formed on an insulating layer 37 provided on the surface of the substrate 36, a circuit element 34 fixed on the conductive pattern 38, and a circuit element 35.
Thin metal wire 35 for electrically connecting the conductive pattern 38 with the conductive pattern 38
And the lead 31 electrically connected to the conductive pattern constitute the hybrid integrated circuit device 30.

As described above, the entire hybrid integrated circuit device 30 is sealed with the insulating resin 32 except for the back surface of the substrate 36. As a method of sealing with the insulating resin 11, there are an injection mold using a thermoplastic resin and a transfer mold using a thermosetting resin.

The process of resin sealing by transfer molding will be described with reference to FIG. FIG. 6 shows a mold 40
It is sectional drawing which shows the state which performs resin sealing using. Here, the substrate 36 is placed with the side from which the lead 31 is led out in the direction of the paper surface. The position of the substrate 36 is fixed by holding the lead 31 between the upper and lower molds.

On the surface of the substrate 36, an electric circuit including the circuit elements 34 and the like is formed on the surface. The substrate 36 is placed on the lower mold 40B. Upper mold 40A to lower mold 40
By bonding to B, a cavity that is a space for enclosing the resin is formed. By injecting the insulating resin 32, which is a thermosetting resin, from the gate 41, the metal plate 20 is sealed except for the back surface. Here, gate 4
The air vent 42 is provided in a portion facing 1 and the air vent 42 may be provided in a portion other than this portion. Then, by injecting the air inside the cavity from the air vent 42 to the outside, the resin is reliably injected.

The hybrid integrated circuit device 30 sealed in the above steps is completed as a product through an after-curing step of hardening a thermosetting resin and the like.

[0008]

However, the hybrid integrated circuit device as described above has the following problems.

First, in the after-curing step of curing the insulating resin made of a thermosetting resin or in the usage condition, the hybrid integrated circuit device is warped and the internal electric circuit is damaged. I had a problem. The above is particularly remarkable in the hybrid integrated circuit device using a large metal substrate.

Second, the back surface of the substrate 36 is covered with the insulating resin 32.
Exposed from. Therefore, the substrate 36 and the insulating resin 32
There was a problem that the adhesive strength with was weak.

The present invention has been made in view of the above problems. Therefore, a main object of the present invention is to provide a hybrid integrated circuit device capable of preventing warping of the hybrid integrated circuit device.

[0012]

According to the present invention, first, a conductive pattern provided on a surface of a metal substrate, a circuit element fixed to the conductive pattern, and an output or an input connected to the conductive pattern. In the hybrid integrated circuit device including a lead extending to the outside and an insulating resin made of a thermosetting resin that seals the circuit element by exposing at least the back surface of the metal substrate, By providing a groove on the upper surface of the resin, it is possible to prevent warpage of the entire device.

Secondly, the present invention is characterized in that the groove is provided in the peripheral portion of the insulating resin.

Thirdly, the present invention is characterized in that the groove is provided in the longitudinal direction of the metal substrate.

Fourthly, the present invention is characterized in that the groove is provided above a portion where the lead is connected to the conductive pattern.

Fifthly, the present invention provides a conductive pattern provided on the surface of a metal substrate, a circuit element fixed to the conductive pattern, and a thin metal wire for electrically connecting the circuit element and the conductive pattern. And a lead that is connected to the conductive pattern and serves as an output or an input and extends to the outside,
In a hybrid integrated circuit device including an insulating resin made of a thermosetting resin that exposes at least the back surface of the metal substrate and seals the circuit element, the sag surface of the metal substrate is made of the insulating resin. It is characterized by exposing.

A sixth aspect of the present invention is characterized in that the metal substrate is prevented from separating from the insulating resin due to the insulating resin wrapping around the peripheral portion of the sagging surface.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment for Explaining Hybrid Integrated Circuit Device 10) The configuration of a hybrid integrated circuit device 10 according to the present invention will be described with reference to FIG. The hybrid integrated circuit device 10 has the following configuration. That is, the rectangular metal substrate 16, the conductive pattern 18 formed on the insulating layer 17 provided on the surface of the metal substrate 16, the circuit element 14 fixed on the conductive pattern 18, the circuit element 14 and the conductive pattern. Thin metal wire 15 for electrically connecting with 18
And the lead 11 electrically connected to the conductive pattern 18.
The hybrid integrated circuit device 10 is constituted by Each of these components will be described below.

The metal substrate 16 is a substrate made of aluminum or an equivalent metal. As an example, when a substrate made of aluminum is used as the metal substrate 16, a method of insulating the metal substrate 16 from the conductive pattern 18 formed on the surface is 2
There are two ways. One is a method in which the surface of an aluminum substrate is oxidized and anodized. Another way is
By forming the insulating layer 17 on the surface of the aluminum substrate,
This is a method of forming the conductive pattern 18 on the surface of the. Further, the metal substrate is formed by “punching” with a press machine. As a result, "burrs" are formed on the peripheral portion of one surface of the metal substrate. In the present invention, in the metal substrate, the surface on which the “burr” is formed at the peripheral end portion is referred to as the “burr surface”, and the surface on which the “burr” is not formed is referred to as the “sag surface”. Furthermore, the cross section of the portion where the side surface of the metal substrate 16 and the sag surface 16B are continuous is not formed at a right angle. Specifically, the cross section of the portion where the side surface of the metal substrate 16 and the sag surface 16B are continuous is a rounded cross section. Therefore, no burr is formed at the peripheral edge of the sag surface 16B.

The conductive pattern 12 is made of metal such as copper,
It is formed on the insulating layer 11. Further, a pad made of the conductive pattern 12 is formed on the side where the lead 11 is led out.

The circuit element 14 is mounted at a predetermined position on the conductive pattern 12 via a brazing material such as solder. As the circuit element 14, passive elements or active elements can be generally adopted. Furthermore, a resin-sealed circuit device or the like can also be used as the circuit element 14. Here, the active elements and the like mounted by face-up are metal thin wires 15
And is electrically connected to the conductive pattern 12 via.

The lead 11 is fixed to a pad provided on the peripheral portion of the metal substrate 16 and has a function of performing input / output with the outside. Here, a large number of leads 113 are provided on two opposite sides. The lead 11 is a metal substrate 16
It is also possible to derive from the four sides of, and it is also possible to derive from only one side.

The insulating resin 12 is formed by transfer molding using a thermosetting resin. The insulating resin 12 exposes the sagging surface 16B of the metal substrate 16 to the lower part to seal the entire device. As mentioned above,
The cross section of the portion where the side surface of the metal substrate 16 and the sag surface 16B are continuous is a rounded cross section. Therefore, by carrying out the transfer molding, the thermosetting resin wraps around the portion where the side surface of the metal substrate 16 and the sagging surface 16B are continuous. Specifically, the sagging surface 1 of the metal substrate 16
6B has a structure in which the thermosetting resin wraps around the peripheral edges of the four sides.

The groove 13 is provided on the upper surface of the insulating resin 12. Specifically, the groove 13 is provided in the longitudinal direction of the metal substrate 16 near the periphery of the insulating resin 12. By forming the groove 13 in this manner, the metal substrate 1
It is possible to prevent the warp of No. 6 from rising. Specifically, firstly, the warp of the metal substrate 16 can be countered by the fact that the thin portion on the upper surface of the metal substrate 16 is filled early and hardened to be integrated with the substrate. it can. Secondly, by providing the groove 13, the upper surface of the insulating resin 12 on the metal substrate 16 has a surface having various angles with respect to the mounting surface of the metal substrate 16. Therefore, by combining these surfaces, a side for reducing the warp of the metal substrate 16 is formed, so that the stress for warping the metal substrate 16 can be countered. Therefore, the rigidity of the entire device in the longitudinal direction is improved, and the structure does not easily deform even when stress is applied. Further, the groove 13 is formed on the upper surface of the insulating resin 12,
It is also possible to form it at a place other than the peripheral portion. Furthermore,
Grooves 13 are formed on the upper surface of the insulating resin 12 in the four sides.
It is also possible to provide.

Here, the leads 11 are fixed to the conductive patterns 12 at the peripheral portions of the metal substrate 16 which face each other in the longitudinal direction. Then, the groove 13 is provided on the upper surface of the insulating resin 12 corresponding to above the portion where the lead 11 is connected to the conductive pattern 12. Since the lead 11 extends horizontally, the height of the lead 11 is lower than that of the circuit element 14. From this, lead 11
The upper part of the area connected to the conductive pattern 12 is a margin made of the insulating resin 12. Therefore, by providing the groove 13 at the margin, the groove 13 can be formed without increasing the thickness of the insulating resin 12.

The relationship between the thermal expansion coefficient of the insulating resin 12 and the warp of the substrate during after cure will be described with reference to FIG. In the present invention, a thermosetting resin can be used as the insulating resin 12. When a thermosetting resin is used, the thermosetting resin is cured by heating the entire apparatus to near the glass transition temperature of the thermosetting resin using a furnace after the molding step. In this way, the step of curing the thermosetting resin by heating is called an after-curing step. In the past,
In the after-cure process, warpage occurred in the entire hybrid integrated circuit device. Therefore, warping of the hybrid integrated circuit device is prevented in the after-curing process by the pressure bonding process of applying pressure to the plurality of stacked hybrid integrated circuit devices.

From this, an experiment was conducted to clarify the relationship between the thermal expansion coefficient of the thermosetting resin and the warp of the hybrid integrated circuit device in the after-cure process. Specifically, an aluminum substrate was used as the metal substrate 16. Then, a plurality of hybrid integrated circuit devices sealed with thermosetting resins having different thermal expansion coefficients were prepared, and the amount of warpage that occurred with each was measured. Specifically, the coefficient of thermal expansion of the thermosetting resin used is 10 × 10 ⁻⁶ / ° C. to 17 × 10
Experiments were carried out using eight hybrid integrated circuit devices that differed between ^-6 / ° C. The thermal expansion coefficient of aluminum, which is the material of the metal substrate 16, is 23 × 10 ⁻⁶ / ° C.

Here, as described above, the thermal expansion coefficient of aluminum, which is the material of the metal substrate 16, is 23 × 10 ^-6 / ° C. Therefore, in a simple way, as a resin that seals the metal substrate 16, a coefficient of thermal expansion (23 ×
When a thermosetting resin having a temperature of 10 ⁻⁶ / ° C.) is used, it seems that the substrate does not warp in the after-curing process. However, as components of the hybrid integrated circuit device 10, other than the metal substrate 16 and the insulating resin 12,
A circuit element, an insulating layer 17 and the like are provided on the surface of the metal substrate 16. Therefore, the coefficient of thermal expansion (2
Even if a thermosetting resin having 3 × 10 ⁻⁶ / ° C.) is used,
It was found that the circuit elements, the insulating layers, and the like affect each other, resulting in warpage of the entire device.

The graph of FIG. 2 shows the results of experiments conducted under the above conditions. In the graph, the horizontal axis represents the coefficient of thermal expansion of the thermosetting resin, and the vertical axis represents the amount of warpage that occurs in the hybrid integrated circuit device during the after-cure process. As is clear from this graph, the amount of warpage of the hybrid integrated circuit device using the thermosetting resin having the thermal expansion coefficient of 13 × 10 ⁻⁶ / ° C. is the smallest. Therefore, when transfer molding is performed using a thermosetting resin having a thermal expansion coefficient of 13 × 10 ⁻⁶ / ° C., it is possible to prevent warpage of the metal substrate 16 in the after-curing process. You can Therefore, if a thermosetting resin having a coefficient of thermal expansion about half that of the material forming the substrate is used, it is possible to prevent warpage of the entire apparatus in the after-curing process as much as possible.

With the structure of the hybrid integrated circuit device 10 as described above, the following effects can be obtained.

First, the sagging surface 16B of the metal substrate 16 is exposed from the insulating resin on the back surface of the hybrid integrated circuit device. The flatness of the back surface of the hybrid integrated circuit device 10 can be ensured by exposing the sagging surface 16B on which no burr is formed to the back surface.

Secondly, the insulating resin 12 can be made to wrap around the peripheral portion of the sagging surface 16B of the metal substrate 16 by molding with the insulating resin 12 with the sagging surface 16B of the metal substrate 16 facing downward. Therefore, the adhesion between the metal substrate 16 and the insulating resin 12 becomes strong, and the metal substrate 16 can be prevented from being separated from the insulating resin 12.

Thirdly, by providing the groove 13 on the upper surface of the insulating resin 12, it is possible to prevent the metal substrate 16 from being warped in the after-curing step of curing the thermosetting resin. be able to.

Fourth, the groove 13 is formed on the upper surface of the insulating resin 12 in the longitudinal direction of the metal substrate 16.
In the after-curing process, the largest bending stress occurs in the longitudinal direction of the metal substrate 16. Therefore,
By providing the groove 13 in the longitudinal direction of the metal substrate 16, it is possible to prevent the metal substrate 16 from warping.

Fifth, the groove 13 is provided on the upper surface of the insulating resin 12 above the portion where the lead 11 is fixed to the conductive pattern 12. Therefore, the insulating resin 12
The groove 13 can be formed without increasing the thickness of the groove 13.

Sixth, by using a thermosetting resin having a coefficient of thermal expansion about half that of the material of the metal substrate 16, it is possible to prevent warpage of the entire hybrid integrated circuit device in the after-cure process.

Seventh, when aluminum is used as the material of the metal substrate 16, the thermal expansion coefficient of the thermosetting resin is set to about 13 × 10 ⁻⁶ / ° C., so that the composition in the after-curing step is mixed. The warp of the entire integrated circuit device can be prevented.

(Second Embodiment for Explaining Method of Manufacturing Hybrid Integrated Circuit Device 10) With reference to FIGS. 3 and 4, a method of manufacturing the hybrid integrated circuit device 10 will be described. The hybrid integrated circuit device 10 according to the present embodiment includes a conductive pattern 1 on a metal substrate 16.
8 and a circuit element 14 and the like, and a step of incorporating the hybrid integrated circuit, and exposing the back surface of the metal substrate 16 to the metal substrate 16
And a step of molding for sealing. Further, in the molding step, the metal substrate 16 is formed by using the mold 20 in which the cavity 21 is provided in the portion corresponding to the back surface of the metal substrate 16.
The peripheral portion of the back surface of the metal substrate 1 is brought into contact with the lower mold 20B,
6 is a step of sealing at least the surface of 6 with the insulating resin. The molding process will be described below.

A method of molding the metal substrate 16 having the hybrid integrated circuit formed on the surface thereof will be described with reference to FIG.
FIG. 3A is a cross-sectional view showing a state in which the metal substrate 16 is molded using the mold including the upper mold 20A and the lower mold 20B. FIG. 3B is an enlarged view of the portion of the circle shown by the dotted line in FIG. Here, the metal substrate 16 is placed with the side from which the lead 11 is led out in the direction of the paper surface. The position of the metal substrate 16 is fixed by holding the lead 31 between the upper and lower molds.

The shape of the mold used for the mold will be described with reference to FIG. The mold used for the mold is
It is composed of an upper mold 20A and a lower mold 20B, and by engaging these two with each other, a cavity filled with a thermosetting resin is formed. The thermosetting resin is injected into the cavity through the gate 23. In addition, in order to release the air inside the cavity to the outside, the air vent 2
4 are provided. Then, an amount of air corresponding to the amount of the thermosetting resin injected from the gate 23 is generated by the air vent 2
4 is released to the outside.

The cavity 21 is provided in the lower die 20B in a region where the metal substrate 16 is placed. The planar size of the cavity 21 is smaller than the planar size of the metal substrate 16. Therefore, in the molding process, the metal substrate 16 is placed so as to cover the cavity 21.

The protrusion 22 is provided inside the cavity 21. And, the height of the top of the convex portion 22 is the lower die 20B.
Has the same height as the surface where the metal substrate 16 contacts.

In the following, the metal substrate 16 is attached to the insulating resin 12
The step of molding will be described in detail. First, lower mold 2
The metal substrate 16 is placed on 0B. Specifically, the cavity 2
The metal substrate 16 is placed so as to cover the substrate 1. As described above, the planar size of the cavity portion 21 depends on the metal substrate 16
The cavity 21 is completely covered with the metal substrate 16 because it is formed smaller than the above. After that, the upper mold 20A
The lower mold 20B is meshed with the lower mold 20B to form a cavity which is a region into which the insulating resin 12 is injected.

Next, the insulating resin 12 is injected from the gate 23. In this embodiment, a thermosetting resin is used as the insulating resin 12. In transfer molding using a thermosetting resin, the pressure when injecting the insulating resin 12 is very large. Therefore, in the conventional example, there is a problem that the insulating resin 12 intrudes into a slight gap between the back surface of the metal substrate 16 and the lower mold 20B. In the present invention,
As described above, the cavity 21 is provided in the lower mold 20B. Therefore, even if the insulating resin 12 enters a slight gap between the back surface of the metal substrate 16 and the lower mold 20B, the insulating resin 12 is stored in the cavity 21. That is, the metal substrate 1
The insulating resin 12 that has entered the back surface of 6 does not adhere to the back surface of the metal substrate 16.

As described above, the metal substrate 16 is placed on the lower die 20B so as to cover the cavity 21.
Therefore, since only the peripheral portion of the metal substrate 16 is in contact with the lower die 20B, the area in which the back surface of the metal substrate 16 is in contact with the lower die 20B is small. From this, when the insulating resin 12 is injected from the gate 23 at a high pressure, the pressure with which the metal substrate 16 contacts the lower mold 20B becomes extremely large. Also,
Since the contact area between the metal substrate 16 and the lower mold 20B is small, it is possible to prevent the temperature of the insulating resin 12 from decreasing due to heat conduction to the mold.

When the metal substrate 16 is relatively large, when the insulating resin 12 is injected into the cavity at a high pressure, a large bending stress due to the injection pressure acts on the metal substrate 16. Therefore, in the present invention, the convex portion 22 is provided inside the cavity portion 21. As described above, the height of the convex portion 22 is
The height is the same as the surface where the lower die 20B and the back surface of the metal substrate 16 contact. Therefore, when the metal substrate 16 is placed on the lower die 20B, the upper surface of the convex portion 22 also contacts the back surface of the metal substrate 16. From this, the bending stress of the metal substrate 16 which acts by the injection pressure becomes half or less.

Hybrid integrated circuit device 10 after the molding process
Is the after-curing process of heating using a furnace,
The thermosetting resin is cured. As described above, since the thermal expansion coefficient of the thermosetting resin is about half that of the metal substrate 16, the warp of the hybrid integrated circuit device can be prevented in the after-curing process.

FIG. 4 shows a hybrid integrated circuit device 10 molded through the above steps. This hybrid integrated circuit device is completed as a product through a lead cutting process and the like.

With the method of manufacturing the hybrid integrated circuit device 10 as described above, the following effects can be obtained.

First, by providing the cavity 21 in the lower die 20B, the area where the back surface of the metal substrate 16 and the lower die 20B are in contact with each other can be reduced. Therefore, when the insulating resin 12 is injected into the cavity with high pressure, the metal substrate 16 comes into contact with the lower mold 20B with strong pressure. Therefore, it is possible to prevent the insulating resin 12 from entering the contact portion between the back surface of the metal substrate 16 and the lower mold 20B.

Second, the back surface of the metal substrate 16 and the lower mold 20.
Even if the insulating resin 12 has entered the contact portion with B, the insulating resin 12 that has entered is stored in the cavity 21. Therefore, the insulative insulating resin 12 can be prevented from adhering to the back surface of the metal substrate 16.

Thirdly, since the cavity 21 is provided in the lower die 20B, the area where the back surface of the metal substrate 16 and the lower die 20B are in contact with each other is small. Therefore, when the high temperature thermosetting resin is injected into the cavity, it is possible to prevent the thermal energy of the thermosetting resin from being released to the outside through the lower mold 20B. As a result, it is possible to prevent the thermosetting resin from being cured in the middle of the molding process and resulting in defective molding.

Fourth, at the time of molding, the cavity 21
Is covered with the metal substrate 16 and is in a hermetically sealed state. Therefore, when heated during molding, the inside of the cavity 21 is in a high pressure state. On the other hand, the inside of the cavity is at atmospheric pressure because the air vent 24 is provided. Therefore, the pressure inside the cavity 21 is higher than that in the cavity. Therefore, it is possible to prevent the insulating resin 12 from flowing around the back surface of the metal substrate 16.

Fifth, since the thermal expansion coefficient of the thermosetting resin is about half the value of the thermosetting resin of the metal substrate 16,
It is possible to prevent warpage of the hybrid integrated circuit device in the after-cure process. For this reason, it is possible to eliminate the step of crimping the hybrid integrated circuit device, which is conventionally necessary, and improve the production efficiency.

[0055]

According to the present invention, the following effects can be obtained.

First, in the hybrid integrated circuit device 10 sealed with the insulating resin 12, by forming the groove 13 on the upper surface of the insulating resin 12, the warpage of the entire hybrid integrated circuit device 10 is prevented. can do.

Secondly, by providing the groove 12 in the longitudinal direction of the metal substrate 16, it is possible to prevent warpage in the longitudinal direction of the metal substrate 16.

Third, the metal substrate 1 is molded by molding the insulating substrate 12 with the sagging surface of the metal substrate 16 facing downward.
The insulating resin 12 can be made to wrap around the peripheral portion of the sagging surface of 6. Therefore, the adhesion between the metal substrate 16 and the insulating resin 12 becomes strong, and the metal substrate 16 can be prevented from being separated from the insulating resin 12.

[Brief description of drawings]

FIG. 1 is a perspective view (A) and a sectional view (B) of a hybrid integrated circuit device of the present invention.

FIG. 2 is a graph showing the relationship between the coefficient of thermal expansion of resin and the warpage of the substrate.

FIG. 3 is a sectional view (A) and an enlarged view (B) illustrating a method for manufacturing a hybrid integrated circuit device of the present invention.

FIG. 4 is a perspective view illustrating a method for manufacturing the hybrid integrated circuit device of the present invention.

FIG. 5 is a perspective view of a conventional hybrid integrated circuit device.

FIG. 6 is a cross-sectional view illustrating a method of manufacturing a conventional hybrid integrated circuit device.

Continued front page    (72) Inventor Katsuyoshi Mino             2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture             Within Yo Denki Co., Ltd. F-term (reference) 4M109 AA01 BA03 CA21 DA08 DB02                       EA11 GA02

Claims (6)

[Claims] 1. A conductive pattern provided on the surface of a metal substrate, a circuit element fixed to the conductive pattern, a lead connected to the conductive pattern and extended to the outside as an output or an input, and the metal. In a hybrid integrated circuit device provided with an insulating resin made of a thermosetting resin that exposes at least the back surface of a substrate and seals the circuit element, by providing a groove on the upper surface of the insulating resin, A hybrid integrated circuit device characterized by preventing the warpage of the whole. 2. The hybrid integrated circuit device according to claim 1, wherein the groove is provided in a peripheral portion of the insulating resin. 3. The hybrid integrated circuit device according to claim 2, wherein the groove is provided in a longitudinal direction of the metal substrate. 4. The hybrid integrated circuit device according to claim 1, wherein the groove is provided above a portion where the lead is connected to the conductive pattern. 5. A conductive pattern provided on the surface of a metal substrate, a circuit element fixed to the conductive pattern, a thin metal wire electrically connecting the circuit element and the conductive pattern, and the conductive pattern. Hybrid integrated circuit device provided with leads connected to serve as outputs or inputs and extended to the outside, and an insulating resin made of a thermosetting resin that seals the circuit element by exposing at least the back surface of the metal substrate. In the hybrid integrated circuit device, the sagging surface of the metal substrate is exposed from the insulating resin. 6. The hybrid integrated circuit device according to claim 5, wherein the insulating substrate is prevented from coming off from the insulating resin when the insulating resin wraps around a peripheral portion of the sagging surface. .