JP2003305405A - Method of forming film - Google Patents
Method of forming filmInfo
- Publication number
- JP2003305405A JP2003305405A JP2002114257A JP2002114257A JP2003305405A JP 2003305405 A JP2003305405 A JP 2003305405A JP 2002114257 A JP2002114257 A JP 2002114257A JP 2002114257 A JP2002114257 A JP 2002114257A JP 2003305405 A JP2003305405 A JP 2003305405A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum container
- substrate
- film
- vacuum
- vacuum vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、溶媒を除去するこ
とによって膜を形成する技術に関するものであって、例
えば、半導体プロセスにおいて有機絶縁膜や感光性樹脂
膜をシリコンウエハー上への形成や、液晶パネルプロセ
スにおいて配向膜をガラス基板上に形成する際に用いら
れる膜形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a film by removing a solvent, for example, forming an organic insulating film or a photosensitive resin film on a silicon wafer in a semiconductor process, The present invention relates to a film forming method used when an alignment film is formed on a glass substrate in a liquid crystal panel process.
【0002】[0002]
【従来の技術】化合物が溶媒に溶けた液(溶液)で膜を
形成するには、基板上に液を塗布し“塗膜”を形成する
工程と、液の溶媒を除去し“膜”を形成する工程が必要
である。基板上に液を塗布し塗膜を形成する方法として
は、スピンコート法、スプレーコート法、スリットコー
ト法、ディップ法等があり、各々膜厚や塗布液材料の物
理的な性質や塗布対象で有る基板形態などによって適正
な手法が選択される。一方、液の溶媒を除去し膜を形成
する方法としては、ホットプレート方式、熱風加熱方
式、遠赤外線加熱方式など加熱による方法や、蒸気圧の
変化を利用する真空方式およびこれらの組合せによる溶
媒除去方法が考案されている。2. Description of the Related Art In order to form a film from a liquid (solution) in which a compound is dissolved in a solvent, a step of applying a liquid on a substrate to form a "coating film" and removing the solvent of the liquid to form a "film" A forming process is required. There are spin coating method, spray coating method, slit coating method, dipping method, etc. as a method for applying a liquid on a substrate to form a coating film, and each of them depends on the film thickness, the physical properties of the coating liquid material, and the application target. An appropriate method is selected depending on the existing substrate form. On the other hand, as a method for removing the solvent of the liquid to form a film, a method by heating such as a hot plate method, a hot air heating method, a far infrared heating method, a vacuum method utilizing a change in vapor pressure, or a solvent removal by a combination thereof is used. A method has been devised.
【0003】本発明は上記工程における後者、つまり溶
液の溶媒を除去する方法に関するものである。この工程
での問題点の一つには、気流の影響で風紋状の膜厚不均
一の発生がある。特に、低粘性の材料や液膜が厚くなる
と流動が容易になるため膜厚が不均一になりやすく、こ
の問題がクローズアップしてくる。このような膜厚不均
一の問題を解決する手法として気流の存在しない真空中
での加熱処理が有効であることが知られている。しか
し、真空中での加熱処理においても問題がある。1つ
は、処理した基板を冷却せずに大気開放した場合、加熱
下で粘性の低い化合物材料では気流の影響を受けて膜厚
均一性を劣化させる問題。他には、真空では熱伝導率が
低いため例えば基板を加熱源から離しても冷却するのに
長時間必要である問題と、その結果、膜の性質変化が生
じる問題がある。この対策として真空中で基板を強制冷
却する手段が公知であり、例えば特開2001−854
40号公報がある。この公知例では真空容器中の熱処理
空間で基板を加熱処理した後、その空間から基板を離
し、熱遮断シャッターでヒーターからの輻射熱を防ぎ、
かつ、真空容器内に設置された冷却板にサセプタを介し
て接触させることによって行うものである。この手段で
は、真空容器内に稼働部を設ける必要があり、装置構成
が複雑になるとか、稼働部からの發塵の問題とかが懸念
される。The present invention relates to the latter of the above steps, that is, a method for removing the solvent of the solution. One of the problems in this process is the occurrence of wind pattern-like non-uniformity of the film thickness due to the influence of the air flow. In particular, when a low-viscosity material or a liquid film becomes thicker, the flow becomes easier, so that the film thickness tends to become nonuniform, and this problem will be highlighted. It is known that heat treatment in a vacuum without air flow is effective as a method for solving such a problem of non-uniform film thickness. However, there is a problem in heat treatment in vacuum. First, when the processed substrate is exposed to the atmosphere without being cooled, a compound material having a low viscosity under heating is affected by an air flow and deteriorates film thickness uniformity. In addition, there is a problem that it takes a long time to cool the substrate even if the substrate is separated from the heating source because of its low thermal conductivity in a vacuum, and as a result, the property of the film changes. As a measure against this, means for forcibly cooling the substrate in a vacuum is known, and for example, Japanese Patent Laid-Open No. 2001-854.
There is a publication No. 40. In this known example, after heat-treating a substrate in a heat treatment space in a vacuum container, the substrate is separated from the space, and a radiant heat from a heater is prevented by a heat blocking shutter,
In addition, the cooling plate installed in the vacuum vessel is brought into contact with the cooling plate via the susceptor. With this means, it is necessary to provide an operating part in the vacuum container, and there is a concern that the device configuration will be complicated and that the problem of dust from the operating part will occur.
【0004】[0004]
【発明が解決しようとする課題】従って本発明における
課題は、真空中での加熱処理による膜形成方法に関し
て、基板上に形成された膜厚を均一にすること、シンプ
ルな構成で処理時間を短くして膜の性質に悪影響を与え
ないことである。Therefore, an object of the present invention is to make the film thickness formed on the substrate uniform with respect to the film forming method by heat treatment in vacuum, and to shorten the processing time with a simple structure. That is, it does not adversely affect the properties of the film.
【0005】[0005]
【課題を解決するための手段】本発明は、真空中での加
熱処理による膜形成方法に関して、基板上に形成された
膜厚を均一にすること、シンプルな構成で処理時間を短
くして膜の性質に悪影響を与えないようにするものであ
る。その手段は、溶液を基板に塗布する工程と、該溶液
の溶媒を除去する工程を有する膜形成方法において、溶
媒除去方法が、1.真空容器内に基板を搬送する工程
と、2.真空容器内を減圧する工程と、3.真空容器を
加熱する工程と、4.真空容器を冷却する工程と、5.
真空容器内を大気圧に戻す工程と、6真空容器内から基
板を搬出する工程を有する高とをことを特徴とする膜形
成方法によるものである。SUMMARY OF THE INVENTION The present invention relates to a method for forming a film by heat treatment in a vacuum, wherein the film thickness formed on a substrate is made uniform, and the processing time is shortened with a simple structure. It does not adversely affect the property of. The means is a film forming method including a step of applying a solution to a substrate and a step of removing the solvent of the solution, wherein the solvent removing method is 1. 1. a step of transferring the substrate into a vacuum container; 2. depressurizing the inside of the vacuum container; 3. heating the vacuum container; 4. cooling the vacuum vessel;
According to the film forming method, the method includes a step of returning the inside of the vacuum container to atmospheric pressure, and a step of carrying out the substrate from the inside of the vacuum container.
【0006】[0006]
【発明の実施の形態】以下、添付図面によって本発明の
実施の形態を説明する。図1は本発明の一実施の形態に
係る膜形成方法の概念図である。同図において、11は
上面に塗膜が形成された基板、12は塗布した液膜、1
3は真空容器の上蓋、14は真空容器の下部材、15は
パッキン、16はプロキシ、17はホットプレート、1
8はクールプレートである。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a conceptual diagram of a film forming method according to an embodiment of the present invention. In the figure, 11 is a substrate having a coating film formed on its upper surface, 12 is a coated liquid film, 1
3 is an upper lid of the vacuum container, 14 is a lower member of the vacuum container, 15 is packing, 16 is a proxy, 17 is a hot plate, 1
8 is a cool plate.
【0007】本発明では、例えばスリットコート法によ
り溶液をシリコンウエハー上に塗布する。塗布方法とし
ては、スピンコート法でも、ディップ法でもよく、溶媒
によって希釈された液を塗布するものであれば特に限定
されるものではない。次に、塗布した基板を搬送し真空
容器内のプロキシ上所定の位置に設置し、真空容器の上
蓋と下部材を密閉して真空容器内を減圧する。In the present invention, the solution is applied onto the silicon wafer by, for example, the slit coating method. The coating method may be a spin coating method or a dipping method, and is not particularly limited as long as it applies a liquid diluted with a solvent. Next, the coated substrate is transported and placed at a predetermined position on the proxy in the vacuum container, and the upper lid and the lower member of the vacuum container are closed to reduce the pressure in the vacuum container.
【0008】ここで、真空容器の構成材料として、後に
加熱、冷却される面(図1の真空容器の下部材)は熱伝
導率が高いアルミ、銅、SUS、真鍮などの金属および
合金が好ましく、ホットプレートやクールプレートに接
触することで加熱、冷却する場合は両面を平滑にすると
か、図2のようにジグザグ形状に加工して、下部材の体
積に対する接触面積を大きくするのが熱伝導を良好に
し、昇温レートを上げる点からより好ましい。また、そ
の金属板の厚さは、昇降温レートの観点からは薄いほう
が良く、熱変形および圧力差による変形からは厚いほう
が良い。許容される変位量は塗布材料やプロセス設定な
どによって異なり、プロキシを使用しない場合は変位す
ることで基板と下部材の接触が不完全になるためその影
響が大きい。プロキシを用いて多少の変位が許される場
合、例えば1mmプロキシで下部材の変位が0.1mm
程度許される場合では、SUSを下部材とすると、20
0mmφの直径では真空容器下部材の厚さは5mm程度
が好ましい。また、真空容器が大きくなるとその変形が
大きくなるため機械的にホットプレートと真空容器の下
部材を固定すればよい。例えば図3のように変位量の一
番大きな下部材中心にホットプレートとの機械的なロッ
ク機構を設けることが考えられる。真空容器の上蓋と下
部材間のパッキンは、加熱および減圧の条件に耐えるも
のであればよく、ニトリルゴム、シリコーンゴム、フッ
素ゴム等を用いることができる。真空容器の上蓋は、加
熱、冷却による温度変化の少ない熱伝導率が小さいガラ
スなどの材料が好ましいが、パッキンの断熱性能によっ
ては下部材と同じ材料を用いることも可能である。プロ
キシの材質や高さは、昇温レートや搬送ロボットの要
請、下部材の変位量などによって決め、必須なものでは
ない。Here, as the constituent material of the vacuum container, the surface to be heated and cooled later (the lower member of the vacuum container in FIG. 1) is preferably a metal or alloy such as aluminum, copper, SUS or brass having high thermal conductivity. When heating and cooling by contacting a hot plate or a cool plate, both sides should be smoothed or processed into a zigzag shape as shown in Fig. 2 to increase the contact area with respect to the volume of the lower member. Is more preferable, and it is more preferable from the viewpoint of increasing the temperature rising rate. Further, the thickness of the metal plate is preferably thin from the viewpoint of the temperature rising / falling rate, and is preferably thick from the viewpoint of thermal deformation and deformation due to pressure difference. The allowable amount of displacement differs depending on the coating material and process settings, etc., and if a proxy is not used, the displacement will have a large effect because the contact between the substrate and the lower member becomes incomplete. If some displacement is allowed using the proxy, for example, the displacement of the lower member is 0.1 mm with the 1 mm proxy.
If SUS is used as the lower member, it is 20
When the diameter is 0 mm, the thickness of the lower member of the vacuum container is preferably about 5 mm. Further, as the size of the vacuum container increases, its deformation increases, so that the hot plate and the lower member of the vacuum container may be mechanically fixed. For example, as shown in FIG. 3, it is conceivable to provide a mechanical lock mechanism with the hot plate at the center of the lower member having the largest displacement. The packing between the upper lid and the lower member of the vacuum container may be one that can withstand the conditions of heating and depressurization, and nitrile rubber, silicone rubber, fluororubber or the like can be used. The upper lid of the vacuum container is preferably made of a material such as glass which has a small temperature change due to heating and cooling and a small thermal conductivity, but the same material as the lower member can be used depending on the heat insulating performance of the packing. The material and height of the proxy are determined according to the rate of temperature rise, the request of the transfer robot, the amount of displacement of the lower member, etc., and are not essential.
【0009】減圧した後、真空容器をホットプレートに
乗せ加熱する。この工程で、塗膜が形成された基板は真
空加熱処理され、溶媒が除去され膜が形成される。その
後、真空容器をクールプレートに乗せ、真空容器の下部
材を冷却することによって基板の温度を下げる。このク
ールプレートは熱容量を大きくしてプレート温度が高く
ならないようにすることが重要で、場合によっては冷却
水を循環させるなどすることが好ましい。After the pressure is reduced, the vacuum container is placed on a hot plate and heated. In this step, the substrate on which the coating film has been formed is subjected to vacuum heat treatment to remove the solvent and form a film. After that, the vacuum container is placed on a cool plate, and the temperature of the substrate is lowered by cooling the lower member of the vacuum container. It is important to increase the heat capacity of the cool plate so that the plate temperature does not rise, and it is preferable to circulate cooling water in some cases.
【0010】その後、基板が必要な温度以下に下がった
ら真空容器を大気開放して真空容器の上蓋とした部材を
開けて膜が形成された基板を搬出する。After that, when the temperature of the substrate falls below a required temperature, the vacuum container is opened to the atmosphere, the member serving as the upper lid of the vacuum container is opened, and the substrate on which the film is formed is carried out.
【0011】(実施例1)直径125mmφのシリコン
ウエハー上に、下記組成物からなる溶液をスリットコー
ト法で塗膜厚さが100μmとなるように塗布した。
組成物
EHPE−3150(商品名、ダイセル化学工業(株)製) 100重量部
SP−170(商品名、旭電化工業(株)製) 1.5重量部
ジエチレングリコールジメチルエーテル 100重量部
その後、真空容器内に搬送し1mm厚の真鍮製プロキシ
上に設置した。次に真空容器を密閉し真空ポンプを作動
させ減圧した。真空度が133Paに到達した時点で1
00℃に加熱してあるホットプレート上に真空容器を乗
せて真空加熱処理を行った。ホットプレート上に真空容
器を乗せて10分後にクールプレート上に真空容器を乗
せて冷却した。昇温レートは、室温から80℃まで昇温
するのに5分で、降温レートは60℃まで下がるのに約
35秒であった。ここで、真空容器は下部材として17
5mmφ、5mm厚の平滑なアルミ板を用い、クールプ
レートとしては400×400×20mm3のアルミブ
ロックを用いた。つづいて、真空容器を大気開放して基
板を取り出してみたところ、風紋は発生しておらず、均
一な膜厚であった。Example 1 On a silicon wafer having a diameter of 125 mmφ, a solution containing the following composition was applied by a slit coating method so that the coating film thickness would be 100 μm. Composition EHPE-3150 (trade name, manufactured by Daicel Chemical Industries, Ltd.) 100 parts by weight SP-170 (trade name, manufactured by Asahi Denka Co., Ltd.) 1.5 parts by weight Diethylene glycol dimethyl ether 100 parts by weight Thereafter, in a vacuum container And placed on a brass proxy with a thickness of 1 mm. Next, the vacuum vessel was closed and the vacuum pump was operated to reduce the pressure. 1 when the degree of vacuum reaches 133 Pa
A vacuum container was placed on a hot plate heated to 00 ° C. to perform a vacuum heat treatment. The vacuum container was placed on the hot plate, and after 10 minutes, the vacuum container was placed on the cool plate and cooled. The temperature rising rate was 5 minutes for increasing the temperature from room temperature to 80 ° C., and the temperature decreasing rate was about 35 seconds for decreasing the temperature to 60 ° C. Here, the vacuum container is used as a lower member.
A smooth aluminum plate having a diameter of 5 mm and a thickness of 5 mm was used, and an aluminum block of 400 × 400 × 20 mm 3 was used as a cool plate. Subsequently, when the vacuum container was opened to the atmosphere and the substrate was taken out, no wind ripple was generated and the film thickness was uniform.
【0012】(比較例1)前記実施例と同じ塗布液を同
様に塗布したシリコンウエハーを真空容器に入れ、ホッ
トプレート上に乗せて10分間の真空加熱処理までは同
様に行った。ここでは、加熱状態のまま、真空容器を大
気開放し基板を搬出して観察した。その結果、膜表面に
うねりがあり膜厚が不均一になっていた。(Comparative Example 1) A silicon wafer coated with the same coating solution as in the above Example was placed in a vacuum container, placed on a hot plate, and subjected to vacuum heat treatment for 10 minutes in the same manner. Here, the substrate was unloaded and observed while the vacuum vessel was opened to the atmosphere in the heated state. As a result, the film surface was undulated and the film thickness was non-uniform.
【0013】(比較例2)前記実施例と同じ塗布液を同
様に塗布したシリコンウエハーを真空容器に入れ、ホッ
トプレート上に乗せて10分間の真空加熱処理までは同
様に行った。ここでは、基板の冷却をクールプレートに
移動することなくホットプレートの電源を切り自然冷却
で行った。その結果、60℃まで冷却するのに約60分
を要した。(Comparative Example 2) A silicon wafer coated with the same coating solution as in the above Example was placed in a vacuum container, placed on a hot plate, and subjected to vacuum heat treatment for 10 minutes in the same manner. Here, the cooling of the substrate was performed by natural cooling without turning the power of the hot plate to the cool plate. As a result, it took about 60 minutes to cool to 60 ° C.
【0014】[0014]
【発明の効果】以上説明したように本発明によればシン
プルな構成の真空容器をホットプレートとクールプレー
ト上を移動させることで、特に厚膜形成時に発生しやす
い膜厚不均一問題(風紋)や、真空中での冷却のため処
理時間が長くなるという問題を解決することができる。As described above, according to the present invention, by moving the vacuum container having a simple structure on the hot plate and the cool plate, the film thickness nonuniformity problem (wind ripple pattern) which is particularly likely to occur at the time of forming a thick film. Also, it is possible to solve the problem that the processing time becomes long due to cooling in a vacuum.
【図1】本発明の実施の形態を説明する図。FIG. 1 is a diagram illustrating an embodiment of the present invention.
【図2】ホットプレートと真空容器下部材の接触に関す
る図その1。FIG. 2 is a diagram 1 related to contact between a hot plate and a lower member of a vacuum container.
【図3】ホットプレートと真空容器下部材の接触に関す
る図その2。FIG. 3 is a diagram relating to contact between the hot plate and the lower member of the vacuum container (2).
11 上面に塗膜が形成された基板 12 塗布した液膜 13 真空容器の上蓋 14 真空容器の下部材 15 パッキン 16 プロキシ 17 ホットプレート 18 クールプレート 11 Substrate with coating film formed on the upper surface 12 Applied liquid film 13 Top cover of vacuum container 14 Lower part of vacuum container 15 packing 16 proxies 17 hot plate 18 cool plate
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AB16 AB17 EA04 4D075 BB18Z BB24Y BB36Y BB56Y CA23 CA48 DA06 DB13 DB14 DC22 DC24 EA07 EA45 5F046 KA04 KA10 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 2H025 AB16 AB17 EA04 4D075 BB18Z BB24Y BB36Y BB56Y CA23 CA48 DA06 DB13 DB14 DC22 DC24 EA07 EA45 5F046 KA04 KA10
Claims (5)
溶媒を除去する工程を有する膜形成方法において、溶媒
除去方法が、1.真空容器内に基板を搬送する工程と、
2.真空容器内を減圧する工程と、3.真空容器を加熱
する工程と、4.真空容器を冷却する工程と、5.真空
容器内を大気圧に戻す工程と、6真空容器内から基板を
搬出する工程を有する高とをことを特徴とする膜形成方
法。1. A method of forming a film, comprising: a step of applying a solution to a substrate; and a step of removing the solvent of the solution. A step of transferring the substrate into a vacuum container,
2. 2. depressurizing the inside of the vacuum container; 3. heating the vacuum container; 4. cooling the vacuum vessel; A film forming method comprising: a step of returning the inside of a vacuum container to atmospheric pressure; and 6) a step of unloading a substrate from the inside of the vacuum container.
真空容器を加熱する方法がホットプレート上に真空容器
を設置して行うことを特徴とする膜形成方法。2. The film forming method according to claim 1, wherein
The method for heating a vacuum container is carried out by placing the vacuum container on a hot plate.
真空容器を冷却する方法がクールプレート上に真空容器
を設置して行うことを特徴とする膜形成方法。3. The film forming method according to claim 1, wherein
A film forming method characterized in that the method of cooling the vacuum container is performed by installing the vacuum container on a cool plate.
空容器の加熱面熱伝導率が非加熱面熱伝導率より大きい
材料を用いることを特徴とする膜形成方法。4. The film forming method according to claim 1, wherein a material having a heating surface thermal conductivity of the vacuum container higher than a non-heating surface thermal conductivity is used.
真空容器とホットプレートが機械的に固定されることを
特徴とする膜形成方法。5. The film forming method according to claim 2,
A method for forming a film, wherein a vacuum container and a hot plate are mechanically fixed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002114257A JP2003305405A (en) | 2002-04-17 | 2002-04-17 | Method of forming film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002114257A JP2003305405A (en) | 2002-04-17 | 2002-04-17 | Method of forming film |
Publications (1)
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018207575A1 (en) * | 2017-05-12 | 2018-11-15 | 株式会社ダイセル | Adhesive agent layer forming device, semiconductor chip manufacturing line, and laminated body manufacturing method |
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2002
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018207575A1 (en) * | 2017-05-12 | 2018-11-15 | 株式会社ダイセル | Adhesive agent layer forming device, semiconductor chip manufacturing line, and laminated body manufacturing method |
CN110651355A (en) * | 2017-05-12 | 2020-01-03 | 株式会社大赛璐 | Adhesive layer forming apparatus, semiconductor chip production line, and manufacturing method of laminated body |
KR20200007864A (en) * | 2017-05-12 | 2020-01-22 | 주식회사 다이셀 | Adhesive layer forming apparatus, semiconductor chip manufacturing line, and manufacturing method of laminated body |
EP3624168A4 (en) * | 2017-05-12 | 2021-01-20 | Daicel Corporation | Adhesive agent layer forming device, semiconductor chip manufacturing line, and laminated body manufacturing method |
TWI765030B (en) * | 2017-05-12 | 2022-05-21 | 日商大賽璐股份有限公司 | Adhesive layer forming apparatus, semiconductor chip production line, and method for manufacturing laminate |
KR102555819B1 (en) * | 2017-05-12 | 2023-07-17 | 주식회사 다이셀 | Adhesive layer forming device, semiconductor chip manufacturing line, and manufacturing method of laminated body |
CN110651355B (en) * | 2017-05-12 | 2024-01-12 | 株式会社大赛璐 | Adhesive layer forming apparatus, semiconductor chip production line, and method for manufacturing laminate |
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