JP2003268591A - Method and apparatus for electrolytic treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for electrolytic treatment by which uniform electrolytic treatment in a substrate plane can be performed without changing the thickness and film type of a conductive layer, the electrolyte of a plating solution, and an apparatus therefor. <P>SOLUTION: A high resistance structure 22 having an electric conductivity lower than that of an electrolytic solution 10 is installed at least in a part of the electrolytic solution 10 which is filled between a substrate W to be treated that has a contact point with either of positive and negative electrodes and the other electrode 14 that is placed oppositely to the substrate W. Then the electrolytic treatment is applied to the surface of the substrate W. A fluorine-based polymer material is used as the high resistance structure 22. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrolytic treatment method and an electrolytic treatment apparatus for subjecting the surface of a substrate to be treated to electrolytic treatment such as plating and etching.

[0002]

2. Description of the Related Art Electrolytic treatment, especially electrolytic plating, is widely used as a method for forming a metal film. In recent years, for example, electrolytic copper plating for multilayer wiring of copper and electrolytic gold plating for forming bumps have attracted attention and are being used for their effectiveness (inexpensive, hole filling characteristics, etc.) in the semiconductor industry and the like.

FIG. 1 shows a substrate to be processed (hereinafter referred to as a substrate) such as a semiconductor wafer by employing a so-called face-down method.
1 shows a conventional general configuration of a plating apparatus for performing electrolytic plating on the surface of a cylindrical plating tank 102 that opens upward and holds a plating solution 100 inside.
And a substrate holding part 104 for detachably holding the substrate W downward and disposing the substrate W at a position where the upper end opening of the plating bath 102 is closed. Inside the plating tank 102, a flat anode plate 106 that is immersed in the plating solution 100 and serves as an anode electrode is horizontally arranged. On the other hand, a conductive layer S is formed on the lower surface (plating surface) of the substrate W, and the conductive layer S has a contact point with the cathode electrode at the peripheral portion thereof.

At the center of the bottom of the plating tank 102, a plating solution injection pipe 10 for forming an upward jet of the plating solution.
8 is connected, and a plating solution receiver 110 is arranged outside the upper part of the plating tank 102.

As a result, the substrate W is placed above the plating bath 102 while being held downward by the substrate holding unit 104, and the plating solution 100 is jetted upward from the bottom of the plating bath 102 so that the bottom surface of the substrate W (plating The lower surface of the substrate W by applying a predetermined voltage from the plating power supply 112 between the anode plate 106 (anode electrode) and the conductive layer S (cathode electrode) of the substrate W while applying the jet of the plating solution 100 to the surface). The plating film is formed on. At this time, the plating solution 100 overflowing the plating tank 102 is recovered from the plating solution receiver 110.

[0006]

The LSI wafer and the liquid crystal substrate tend to have a large area year by year, and as a result, variations in the thickness of the plating film formed on the surface of the substrate occur. It's becoming a problem. In other words, in order to apply a cathode potential to the substrate, a contact with the electrode is provided on the periphery of the conductive layer previously formed on the substrate, but when the area of the substrate becomes large, the conductivity from the contact around the substrate to the center of the substrate is increased. The electric resistance of the layer increases, a potential difference occurs in the surface of the substrate, a difference in plating rate occurs, and this leads to variations in the thickness of the plated film.

That is, in FIG. 3, a conductive layer (copper thin film) having a film thickness of 30 nm and 80 nm is formed on a silicon substrate having a diameter of 200 mm, and a conventional general plating apparatus as shown in FIG. 1 is used. It is a figure which shows the film thickness distribution of the copper plating film in a board | substrate surface when electrolytic copper plating is performed by.
FIG. 4 shows a film of a copper plating film in a substrate surface when a conductive layer (copper thin film) having a film thickness of 100 nm is formed on silicon substrates having diameters of 200 mm and 300 mm and electrolytic copper plating is performed in the same manner as described above. It is a figure which shows thickness distribution. As is clear from FIGS. 3 and 4, when the conductive layer is thin or when the substrate diameter is large, the variation in the film thickness distribution of the copper plating film formed by electrolytic plating is large, and when it is remarkable, the substrate It happens that no copper film is formed near the center.

This phenomenon is electrochemically explained as follows. FIG. 2 is an electrically equivalent circuit diagram of the conventional general electrolytic plating apparatus shown in FIG. That is, a predetermined voltage is applied from the plating power supply 112 between the anode plate 106 (anode electrode) and the conductive layer S (cathode electrode) of the substrate W, both of which are immersed in the plating solution 100, to plate the surface of the conductive layer S. When a film is formed, the following resistance component exists in this circuit. R1 Power line resistance between power supply and anode and various contact resistances R2 Polarization resistance at anode R3 Plating solution resistance R4 Polarization resistance at cathode (plating surface) R5 Resistance of conductive layer R6 Power supply line resistance between cathode potential introducing contact and power supply and various Contact resistance

As is apparent from FIG. 2, when the resistance R5 of the conductive layer S becomes larger than the other electric resistances R1 to R4 and R6, the potential difference across the resistance R5 of the conductive layer S becomes large, Along with that, a difference occurs in the plating current.
In this way, the film growth rate of the plating is reduced at a position far from the cathode introduction contact, and the resistance R5 is further increased when the thickness of the conductive layer S is thin, and this phenomenon becomes prominent. Furthermore, this fact means that the current densities are different in the plane of the substrate, and the plating characteristics themselves (resistivity, purity, embedding characteristics, etc. of the plating film) are not uniform in the plane.

Even in the electrolytic etching in which the substrate serves as an anode, the same problem occurs because the current directions are reversed. For example, in a large-diameter wafer manufacturing process, the etching rate at the central portion of the wafer is slower than that at the peripheral portion.

As a method of avoiding these problems, it is conceivable to increase the thickness of the conductive layer or reduce the electric conductivity. However, the substrate is not only subject to various restrictions in manufacturing processes other than plating, but, for example, when a thick conductive layer is formed on a fine pattern by a sputtering method, voids are likely to occur inside the pattern, so that the conductive layer is easily conductive. It is not possible to increase the layer thickness or change the film type of the conductive layer.

Further, if the contact for introducing the cathode potential is arranged on one surface of the substrate, it is possible to reduce the potential difference in the surface of the substrate, but the portion used as the electrical contact cannot be used as an LSI, which is not realistic. Further, it is also effective to increase the resistance value of the plating solution (resistance R3, R2 or R4 in FIG. 2), but changing the electrolyte of the plating solution means changing the overall plating characteristics. If the metal ion concentration is lowered, the plating rate cannot be sufficiently high.

As described above, in the process of providing a contact on the peripheral portion of the substrate and performing the electroplating using the conductive layer on the surface of the substrate, the plating film thickness greatly varies within the plane of the substrate as the size of the substrate increases. The problem of
In the semiconductor industry, where it is important to make the film thickness and the process uniform within the surface of the substrate to be processed, this problem is a major limitation.

The present invention has been made in view of the above, and an electrolytic treatment that can perform a uniform electrolytic treatment within the surface of a substrate without changing the thickness and film type of the conductive layer, the electrolyte of the plating solution, and the like. An object is to provide a method and an electrolytic treatment apparatus.

[0015]

In order to solve the above problems, the electrolytic treatment method of the present invention is directed to a substrate to be treated having a contact point between one electrode of an anode and one of the cathode and the other substrate facing the substrate to be treated. In the electrolytic treatment method, the high resistance structure having an electric conductivity lower than that of the electrolytic solution is provided in at least a part of the electrolytic solution filled between the electrode and the electrolytic treatment of the surface of the substrate to be processed, A feature is that a fluorine-based polymer material is used as the resistance structure.

As a result, the electric resistance between the anode and the cathode submerged in the electrolytic solution is made higher than that in the case of only the electrolytic solution by interposing the high resistance structure. The in-plane difference in current density can be reduced. At the same time, in the electrolytic treatment process, it is desirable that there is no contamination from the high resistance structure itself. Therefore, by using a fluorine-based polymer material for the high resistance structure itself, there is no contamination in the formed metal film. We have achieved an electrolytic process that does not cause impurities to dissolve. Here, electrolytic plating is performed by bringing the substrate to be processed into contact with the contact of the cathode,
Electrolytic etching can be performed by bringing the substrate to be processed into contact with the contact of the anode.

Further, according to the present invention, a large number of through holes are provided in the high resistance structure made of the fluoropolymer material from the other electrode toward the substrate to be processed by microfabrication by synchrotron light. Is characterized by.

That is, for processing a through hole in a high resistance structure made of a fluoropolymer material, a synchrotron (SR) is used.
An SR (synchrotron) etching technique using synchrotron light generated by a ring (electron storage ring) is used. Synchrotron light (SR light) refers to strong light emitted in the tangential direction of the electron orbit when an electron running at a speed close to the speed of light is bent by the force of a magnetic field. This SR light is a light with a strong directionality, vacuum ultraviolet,
As an X-ray light source, it is several orders of magnitude stronger than other light sources. For this reason, a fluorine-based polymer material (for example, PT
By utilizing this synchrotron light for the FE resin (polytetrafluoroethylene resin), fine and high aspect ratio processing into a fluorine-based polymer material has become possible. Specifically, using this SR photo-etching technology, PT
When synchrotron light is applied to the FE resin plate through a mask, the portion exposed to the synchrotron light is subjected to SR light etching to form a fine through-hole structure. In the present invention, this SR photo-etching technique is applied, and synchrotron light is applied to a fluorine-based polymer material through a mask to manufacture a fluorine-based polymer material having a large number of through holes. Then, the fluoropolymer material is arranged so that the through hole penetrates from the other electrode toward the substrate to be processed.

By the fine processing by the synchrotron light, the porosity of the high resistance structure is controlled, and the current easily flows between the other electrode and the substrate to be processed, but it becomes difficult to flow in the other direction, and the current density is reduced. Controllability can be improved.

Further, according to the present invention, the distribution and / or the inner diameter of the through holes are adjusted so that the surface of the substrate to be processed has a desired processing state when an electric current is applied between the other electrode and the substrate to be processed. By controlling, the electrolytic treatment state of each part of the surface of the substrate to be treated is set to a desired treatment state.

By inserting a high resistance structure between the anode and the substrate to be processed, the influence of the resistance of the conductive layer on the substrate to be processed is reduced and the difference in current distribution on the surface of the substrate to be processed is minimized. However, it is difficult to completely eliminate the difference. Therefore, the electrolytic treatment state of the surface of the substrate to be treated is controlled to a desired treatment state by controlling the distribution and / or the inner diameter of the through holes formed by fine processing using synchrotron light. For example, in the case of electrolytic plating, the current density between the electrodes is controlled by controlling the pore size distribution of the film thickness distribution on the surface of the substrate to be processed by the hole diameter of the through holes or the hole pitch to obtain the desired film thickness distribution. be able to.

In the electrolytic treatment apparatus of the present invention, at least one of the electrolytic solution filled between the substrate to be treated having a contact point between the anode and the one electrode of the cathode and the other electrode facing the substrate to be treated. In a electrolytic treatment apparatus for performing electrolytic treatment on a surface of a substrate to be treated by providing a high resistance structure having an electric conductivity lower than that of the electrolytic solution in a portion, the high resistance structure is made of a fluorine-based polymer material. It is characterized by

The present invention is also characterized in that the high resistance structure made of the fluoropolymer material is provided with a large number of through holes from the other electrode toward the substrate to be processed.

Further, the present invention is characterized in that the high resistance structure is subjected to a surface treatment having hydrophilicity and contains the electrolytic solution.

As a result, the high-resistivity structure is flooded with the electrolytic solution, a current (ions) flows between the electrodes, the current density is made uniform, and the film thickness distribution on the substrate to be processed can be made uniform. For example,
As a surface treatment method for imparting hydrophilicity, a modification method in which a PTFE resin surface is substituted with a specific functional group such as a hydrophilic group or a lipophilic group by a photochemical reaction of an excimer laser has been reported. There is also a method of improving wettability (degreasing the surface, activating the surface, and roughening the surface) by irradiating with plasma.

In the present invention, the high resistance structure is composed of at least two or more layers of high resistance structure, and the distribution of the through holes of the high resistance structure of each layer is determined by the through holes of the high resistance structure of another layer. The distribution is different from the distribution of.

Here, usually, in the electrolytic plating of copper, the anode requires special consideration. First, phosphorus-containing copper is used as the anode material because it is necessary to form a glue-like black film called "black film" on the surface of the anode in order to capture monovalent copper ions generated from the anode. This black film is said to be a compound of copper, phosphorus, chlorine, etc., but only divalent copper ions are sent into the plating solution,
It functions to capture monovalent copper ions that cause abnormal deposition on the plating surface. And the present invention has a high resistance structure having two or more layers of high resistance structure, a layer having a filter effect against foreign matter unnecessary in a black film and a plating film, and a layer as an original high resistance structure. Configured. In addition, the copper anode plate may be electrolytically consumed with plating and its surface may be chipped, but such a chipped material is also captured by the function of the filter and attached to the plating surface of the substrate to be processed. To avoid. However, if it is possible to have a filter function and a function as a desired high resistance structure with one layer, it is not necessary to have two or more layers.

Further, instead of using a soluble copper anode for the anode, an insoluble anode, for example, a titanium surface coated with iridium oxide may be used. In this case, a large amount of oxygen gas is generated on the surface of the anode, but by preventing this oxygen gas from reaching the surface of the substrate to be processed by the high resistance structure, defects such as a part of the plating film may be lost. Can be eliminated. In this way, by introducing the high-resistance structure made of a fluoropolymer material into the plating solution as a substance having a low electric conductivity, and arranging the anode and the cathode uniformly so as to separate them, the diaphragm effect can be obtained. You can get it.

[0029]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of an electrolytic treatment method and an electrolytic treatment apparatus of the present invention will be described below with reference to the drawings.
FIG. 5 shows a schematic view of a main part of an electrolytic treatment apparatus applied to the electrolytic plating apparatus according to the first embodiment of the present invention, and FIG. 6 shows an electrically equivalent circuit diagram thereof. This is a method in which a silicon substrate having a diameter of 200 mm (hereinafter referred to as a substrate) is held by a so-called face-down method and copper plating is applied to this surface (lower surface). The lower surface (plated surface) of this substrate W A sputtered copper thin film as the conductive layer (seed layer) S is formed in the film with a thickness of, for example, 100 nm.

This plating apparatus is provided with a cup-shaped plating tank 12 which holds a plating solution 10 based on, for example, copper sulfate and which opens upward, and the bottom of this plating tank 12 has, for example, a center with a diameter of 30 mm. A donut-shaped anode plate 14 having holes 14a is installed. This anode plate 1
The material of No. 4 is, for example, copper containing 0.04 weight percent of phosphorus. Around the plating tank 12, the plating tank 12
A plating solution receiver 16 for collecting the plating solution 10 overflowing from the upper part of the is arranged.

The plating bath 12 is located at the periphery of the substrate W.
Above, a lip seal 18 that is pressed against the peripheral portion of the lower surface of the substrate W to prevent the plating solution 10 from flowing out from there.
A contact 20 is provided outside the lip seal 18 and comes into contact with the substrate W to introduce a cathode potential to the substrate W.

Inside the plating tank 12, fluorine is provided between the anode plate 14 and the substrate W and provided with through holes 24a so as to have a desired electric conductivity lower than that of the plating solution 10. A high resistance structure 22 made of a polymer material is arranged. In this example, the high resistance structure 22 has a diameter of 100 μm finely processed by synchrotron light, for example.
A large number of through holes 24a are formed (for convenience of illustration in FIG. 5,
It is described that the number of the through holes 24a is considerably smaller than the actual size and the diameter is considerably large.)
It is configured by containing the plating solution 10 inside a.

A synchrotron (S) is used for processing the through hole 24a in the high resistance structure 22 made of a fluoropolymer material.
The SR (synchrotron) etching technique using the synchrotron light generated by the R) ring (electron storage ring) is used. Synchrotron light (SR light) refers to strong light emitted in the tangential direction of the electron orbit when an electron running at a speed close to the speed of light is bent by the force of a magnetic field.
This SR light is a light with a strong orientation and is several orders of magnitude stronger than other light sources as a light source for vacuum ultraviolet rays and X-rays. Therefore, by using this synchrotron light for a fluorine-based polymer material (for example, a PTFE resin (polytetrafluoroethylene resin)) that is a difficult-to-process material that cannot be finely processed even when irradiated with a laser, Fine processing of polymer materials with high aspect ratio has become possible. Specifically, using this SR photo-etching technique, as shown in FIG. 10, when the synchrotron light is applied to the PTFE resin plate on the conductive substrate through a mask, the part exposed to the synchrotron light is SR photo-etched. It is possible to make a fine through-hole structure. Therefore, in the present invention, as shown in FIG. 11, by applying this SR photo-etching technique, the fluoropolymer material 24 is irradiated with synchrotron light through a mask, and the fluoropolymer material 24 having a large number of through holes 24a is formed. To produce.

Although the fluoropolymer material 24 itself is an insulator, the plating solution 1 is applied to the through hole 24a as shown in FIG.
The high resistance structure 22 is configured by allowing 0 to enter and controlling the ratio of the through hole 24a to the entire insulator. The central hole 14a of the anode plate 14 of this fluoropolymer material 24
5, a through hole 24a having a diameter of 100 μm is provided at a position opposite to that of the other portion, or a through hole 24a having an inner diameter larger than the inner diameter of the through hole 24a of the other portion is provided. Plural (for example, diameter 2 mm) are provided.

As a result, the substrate W is placed on the plating bath 12.
Is placed downward, and the plating solution 10 is applied from the bottom of the plating tank 12 to the central hole 14a of the anode plate 14 and the fluoropolymer material 2
No. 4 through the through hole 24a and ejected upward,
While applying the jet of the plating solution 10 to the lower surface (plating surface) of
A plating film is formed on the lower surface of the substrate W by applying a predetermined voltage from the plating power supply 26 (see FIG. 6) between the anode plate 14 (anode electrode) and the conductive layer S (cathode electrode) of the substrate W. . At this time, the plating solution 10 overflowing the plating tank 12 is recovered from the plating solution receiver 16.

A high resistance structure 2 made of a fluoropolymer material 24 having a large number of through holes 24a finely processed in this way.
By inserting 2 between the anode plate 14 and the substrate W, the resistance Rp is added as a new resistance as shown in the equivalent circuit shown in FIG.

When the large resistance Rp is generated by the high resistance structure 22, the ratio of the resistance in the central portion of the substrate W to the resistance in the peripheral portion, that is, (R2 + Rp + R)
3 + R4) / (R2 + Rp + R3 + R4 + R5) approaches 1 and is no longer affected by the resistance R5 of the conductive layer S, and the in-plane difference in the current density due to the electric resistance of the surface of the substrate W is reduced and the in-plane uniformity of the plating film is reduced. improves. In FIG. 6, resistors R1 to R6 are the same as resistors R1 to R6 shown in FIG.

As shown in FIG. 7, as described above, the plating apparatus in which the high resistance structure 22 made of the fluorine-based polymer material 24 is installed (this embodiment example) and the plating apparatus in which it is not installed (conventional example) are used. Then, the thickness distribution of the plating film in the substrate surface when the surface of the substrate W is plated with copper is shown. This Figure 7
From the above, it can be seen that in the plating apparatus of this embodiment, the phenomenon of thinning in the central portion of the substrate does not occur, and uniform plating is performed.

Here, the resistance value of the high resistance structure 22 is set to the diameter of the through hole 24a or the through hole 2 by fine processing.
It can be controlled by changing the distribution of 4a.

In this embodiment, the electrolytic plating is explained, but if the current direction is reversed, that is,
By using this device as it is and inverting the polarity of the power supply, electrolytic etching can be performed, and in this case, the uniformity of etching can be improved.

FIG. 8 is a schematic view of the essential parts of an electrolytic treatment apparatus applied to the electrolytic plating apparatus according to the second embodiment of the present invention. This plating apparatus employs a so-called face-up system, in which the substrate W is placed upward on the substrate platform 30 and is located around the substrate W and has a lip seal 34 made of Viton rubber, for example. This lip seal 3
4, which is located outside the substrate W and is in contact with the conductive layer S of the substrate W.
A contact 36 for introducing a cathode potential is provided at. The lip seal 34 has a height of 10 mm, for example, and can hold the plating solution 10. Substrate stand 3
A holding member 32 is arranged above 0, and an anode plate 38 and a high resistance structure 40 made of a fluoropolymer material 42 are held and fixed to the holding member 32 with a predetermined gap. In this example, the fluorine-based polymer material 42 has a large number of through-holes with a diameter of 100 μm which are finely processed by synchrotron light, and the plating solution 10 is contained therein to form the high resistance structure 40. Has become. Further, the anode plate 38 has a structure in which it is completely covered with the holder 32 and the high resistance structure 40. The high resistance structure 40
It is desirable that the plating solution is previously impregnated in another tank (not shown) in which the plating solution is stored.

Then, the upper surface of the substrate W and the high resistance structure 40
The first plating chamber 44 in which a gap S1 is set between the lower surface and the lower surface of the
However, a second plating chamber 46 in which a gap S2 is set is provided between the upper surface of the high resistance structure 40 and the lower surface of the anode plate 38, and the plating solution is provided in each of the plating chambers 44 and 46. 10 are introduced. The plating solution 10 may be introduced through the gap between the lip seal 34 and the end surface of the high resistance structure 40, or through the through hole 38a provided in the anode plate 38 from the plating solution injection port 39 to form the high resistance structure. Body 40
A method such as introducing the pressurized plating solution 10 to the back side (upper part) of the above is adopted. In addition, in this embodiment, the substrate W and the substrate mounting table 30, or the anode plate 38 and the high resistance structure 40 may be rotated during the electrolytic plating.

The thickness of the copper-plated film obtained by copper-plating the upper surface (plating surface) of the substrate W using the plating apparatus of this embodiment has a high resistance structure composed of the fluoropolymer material 42. By providing 40, it is possible to improve the in-plane uniformity of the film thickness, as in the above-described embodiment.

In this embodiment, the anode plate 38 is completely covered with the high resistance structure 40 and the holder 32, and the plating solution 10 is filled between the anode plate 38 and the high resistance structure 40. Although it has a structure, the thickness of the copper plating film on each part of the surface of the substrate W is controlled by appropriately selecting the diameter of the through holes and the distribution of the through holes of the fluorine-based polymer material 42 while being configured in this way It is possible to obtain a new effect that is not possible in the past.

By the way, usually, in the electrolytic plating of copper, it is necessary to give special consideration to the anode. First, phosphorus-containing copper is used as the anode material because it is necessary to form a glue-like black film called "black film" on the surface of the anode in order to capture monovalent copper ions generated from the anode. This black film is said to be a compound of copper, phosphorus, chlorine, etc., but only divalent copper ions are sent into the plating solution,
It functions to capture monovalent copper ions that cause abnormal deposition on the plating surface.

FIG. 9 is a schematic view of the essential parts showing an electrolytic treatment apparatus applied to the electrolytic plating apparatus according to the third embodiment of the present invention. This plating apparatus adopts a so-called face-up system, and its configuration is almost the same as that of the electrolytic plating apparatus of the second embodiment shown in FIG. 7, and the same parts are designated by the same reference numerals. The difference from the second embodiment is that the high resistance structure 40 is made up of two layers of fluoropolymer material 42.
-1 and a high resistance structure 40-1 composed of
One of the layers of both the high resistance structures 40-1 and 40-2 is used as a layer having a filter effect with respect to a missing substance of the black film 45 formed on the surface of the anode plate 38 and a foreign matter unnecessary for the plating film, and the other layer is used. That is to say, it is the layer of the original high resistance structure. The high resistance structure may have three or more layers. Further, the copper anode plate 38 may be electrolytically consumed along with the plating and its surface may be cut off. However, according to the present embodiment, a high resistance of at least two layers or more is also provided for this dropout due to the function as a filter. Captured by the structure, the missing material is the substrate W
It is possible to avoid adhesion to the plating surface of. However, if it is possible to provide a filter function and a desired high resistance structure function with one layer, it is not necessary to form two layers.

By the way, in the above embodiment, instead of using a soluble copper anode for the anode plate 14 (38), an insoluble anode, for example, a titanium surface coated with iridium oxide may be used. In this case, a large amount of oxygen gas is generated on the surface of the anode plate 14 (38), but this oxygen gas is generated on the surface of the substrate W by the high resistance structure 22 (40) interposed between the anode plate 14 (38) and the substrate W. It is possible to prevent the occurrence of defects, such as the occurrence of defects such as a partial loss of the plated film.
In particular, it is more effective if the high resistance structures 40-1 and 40-2 have two or more layers as shown in FIG. In this way, it is possible to obtain the diaphragm effect by introducing the high resistance structure into the plating solution and disposing the anode and the cathode uniformly so as to be separated.

FIG. 12 is a plan view showing the whole of the substrate processing apparatus equipped with the above-described electrolytic processing apparatus. As shown in FIG. Two loading / unloading sections 210 for accommodating a plurality of substrates W, two plating units 212 for performing plating processing and incidental processing thereof, and loading / unloading section 210
A transfer robot 214 for transferring the substrate W between the substrate and the plating unit 212, and a plating solution supply facility 218 having a plating solution tank 216 are provided.

As shown in FIG. 13, the plating unit 212 is provided with a substrate processing section 220 for performing a plating process and its attendant processing, and a plating solution tray for accumulating a plating solution adjacent to the substrate processing section 220. 222 are arranged. Further, the disk-shaped electrode unit 2 is held at the tip of a swing arm 226 swinging around the rotary shaft 224 and swings between the substrate processing unit 220 and the plating solution tray 222.
An electrode arm portion 230 having 28 is provided. In addition, the pre-coat
A recovery arm 232 and a fixed nozzle 234 for ejecting a chemical liquid such as pure water or ion water, and further a gas or the like toward the substrate are arranged. In this embodiment, three fixed nozzles 234 are provided, and one of them is used for supplying pure water.

In the substrate processing section 220, as shown in FIGS. 14 and 15, a substrate holding section 236 for holding the substrate W with the surface to be plated facing upward, and the substrate holding section above the substrate holding section 236. The cathode part 238 is provided so as to surround the peripheral part of the part 236. Furthermore, a cup 240 having a substantially cylindrical shape with a bottom, which surrounds the periphery of the substrate holding portion 236 and prevents scattering of various chemicals used during processing, is vertically movably arranged via an air cylinder 242.

Here, the substrate holding section 236 is moved up and down by the air cylinder 244 between a lower substrate transfer position A, an upper plating position B, and a pretreatment / cleaning position C intermediate therebetween. Rotation motor 246 and belt 248
It is configured so as to rotate integrally with the cathode portion 238 at any acceleration and rotation speed via the. As shown in FIG. 17, a substrate loading / unloading port 250 is provided on the frame side surface of the plating unit 212 on the side of the transfer robot 214 facing the substrate delivery position A, and the substrate holding portion 236 is raised to the plating position B. At this time, the sealing material 290 and the cathode electrode 288 of the cathode portion 238 described below come into contact with the peripheral edge portion of the substrate W held by the substrate holding portion 236. On the other hand, the upper end of the cup 240 is located below the substrate loading / unloading port 250.
As indicated by a phantom line, the substrate loading / unloading port 250 is closed when it rises and reaches above the cathode portion 238.

The plating solution tray 222 is used to wet the high resistance structure 310 and the anode 298 of the electrode arm portion 230 used in the present invention with the plating solution when plating is not performed, and is shown in FIG. As described above, the high resistance structure 310 is set to a size that can be accommodated, and has a plating solution supply port and a plating solution drain port (not shown).
Further, a photo sensor is attached to the plating solution tray 222, and it is possible to detect fullness of the plating solution in the plating solution tray 222, that is, overflow and drainage. The bottom plate of the plating solution tray 222 is removable,
Around the plating solution tray 222, a local exhaust port (not shown) is installed.

As shown in FIGS. 18 and 19, the electrode arm portion 230 moves up and down via a vertical movement motor 254 and a ball screw (not shown), and a turning motor 256 causes the plating solution tray 222 and the substrate to move. It is adapted to swivel (swing) with the processing section 220.

The precoat / recovery arm 232 is
As shown in FIG. 20, it is connected to the upper end of a support shaft 258 extending in the vertical direction, swivels (swings) via a rotary actuator 260, and moves up and down via an air cylinder 262 (see FIG. 17). It is configured. The precoat / recovery arm 232 holds a precoat nozzle 264 for ejecting a precoat solution on its free end side and a plating solution recovery nozzle 266 for recovering a plating solution on its base end side. Then, the precoat nozzle 264 is
For example, the precoat liquid is intermittently discharged from the precoat nozzle 264 by being connected to a cylinder driven by an air cylinder, and the plating liquid recovery nozzle 266 is
For example, it is connected to a cylinder pump or an aspirator so that the plating solution on the substrate is sucked from the plating solution recovery nozzle 266.

The substrate holder 236 is shown in FIGS.
As shown in FIG. 3, a disc-shaped stage 268 is provided, and at six positions along the circumferential direction of the peripheral portion of the stage 268,
A support arm 270, which is provided with a pedestal 272 having a step portion on the upper surface and horizontally holds and holds the substrate W, is provided upright. One of the support arms 270 does not have a claw, and the upper end of the support arm 270 facing the support arm 270 that does not have a claw is brought into contact with the end surface of the substrate W to rotate. A pressing piece 274 that presses the substrate W against the stepped portion of the pedestal 272 of the support arm 270 having no claw is rotatably supported. Further, chuck claws 276 that rotate to press the substrate W downward from above are rotatably supported on the upper ends of the other four support arms 270.

Here, the lower ends of the pressing piece 274 and the chuck claw 276 are connected to the upper end of a pressing rod 280 biased downward through a coil spring 278, and the pressing rod 2 is pressed.
The pressing piece 274 and the chuck claw 27 along with the downward movement of 80
6 is rotated inward to be closed, and below the stage 268, a support plate 282 that is in contact with the lower surface of the pressing rod 280 and pushes it upward is disposed.

As a result, when the substrate holding portion 236 is located at the substrate transfer position A shown in FIG. 15, the pressing rod 280 comes into contact with the support plate 282 and is pushed upward to push the pressing piece 27.
4 and the chuck claw 276 are rotated outward to open, and the stage 268 is lifted, the pressing rod 280 moves the coil spring 2
The elastic force of 78 descends, and the pressing piece 274 and the chuck claw 276 rotate inward and close.

The cathode portion 238 is shown in FIGS.
5, the support plate 282 (see FIGS. 15 and 23).
Etc.), an annular frame body 286 fixed to the upper end of a pillar 284 standing upright on the periphery, and a cathode electrode 288 divided into six in this example, which is attached to the lower surface of the frame body 286 so as to project inward. And an annular seal member 2 attached to the upper surface of the frame body 286 so as to cover the cathode electrode 288.
90 and. The sealing material 290 is configured such that the inner peripheral edge portion thereof is inclined downward inward and gradually becomes thin so that the inner peripheral end portion hangs downward.

As a result, as shown in FIG. 15, when the substrate holder 236 is raised to the plating position B, the cathode electrode 288 is pressed against the peripheral edge of the substrate W held by the substrate holder 236 to energize, At the same time, the inner peripheral edge of the sealing material 290 is pressed against the upper surface of the peripheral edge of the substrate W to seal it water-tightly, and the plating solution supplied to the upper surface (the surface to be plated) of the substrate is applied from the edge of the substrate W Not only is it prevented from leaching out, but the plating solution is also prevented from contaminating the cathode electrode 288.

In this embodiment, the cathode portion 238 cannot move up and down and rotates together with the substrate holding portion 236. However, the cathode portion 238 can move up and down, and the sealing material 290 moves down the substrate W when lowered. You may comprise so that it may press-contact the to-be-plated surface.

The electrode portion 228 of the electrode arm portion 230
Is a swing arm 226, as shown in FIGS.
A housing 294 connected to the free end of the housing via a ball bearing 292, a hollow support frame 296 surrounding the periphery of the housing 294, and an anode 298 fixed by sandwiching a peripheral portion between the housing 294 and the support frame 296.
And the anode 298 has the housing 29
A suction chamber 300 is formed inside the housing 294 so as to cover the opening of No. 4. Inside this suction chamber 300, a plating solution supply pipe 302 extending from a plating solution supply facility 218 (see FIG. 12) and connected in a diametrical direction to a plating solution introduction pipe 304 is arranged in contact with the upper surface of the anode 298. Further, the housing 294 is connected to a plating solution discharge pipe 306 that communicates with the suction chamber 300.

When the plating solution introducing pipe 304 has a manifold structure, it is effective for supplying a uniform plating solution to the surface to be plated. That is, the plating solution introduction passage 304a extending continuously in the longitudinal direction and the plurality of plating solution introduction holes 3 communicating downward at a predetermined pitch along the introduction passage 304a.
04b is provided, and the plating solution injection hole 29 is provided at a position corresponding to the plating solution introduction hole 304b of the anode 298.
8a is provided. Further, the anode 298 is provided with a large number of through holes 298b which are vertically communicated with each other over the entire surface thereof. As a result, the plating solution introduced from the plating solution supply pipe 302 to the plating solution introduction pipe 304 reaches below the anode 298 through the plating solution introduction hole 304b and the plating solution injection hole 298a, and the anode 298 is immersed in the plating solution. In this state, the plating solution discharge pipe 306 is sucked so that the plating solution below the anode 298 can pass through the through hole 29.
8b through the suction chamber 300 and the plating solution discharge pipe 30
It is designed to be discharged from 6.

The electrode portion 228 and the substrate W held by the substrate holding portion 236 and the high resistance structure 310 when the substrate holding portion 236 is at the plating position C (see FIG. 15).
The gap between the substrate W and the substrate W is lowered until the gap between the high resistance structure 310 and the high resistance structure 310 is lowered by supplying the plating solution from the plating solution supply pipe 302 in this state. The upper surface (the surface to be plated) and the anode 298 are filled with a plating solution, so that the surface to be plated of the substrate W is plated.

Next, the operation of the substrate processing apparatus will be described. First, the substrate W before plating processing is taken out from the loading / unloading section 210 by the transfer robot 214, and with the surface to be plated facing upward, one plating unit 212 from the substrate loading / unloading port 250 provided on the side surface of the frame.
To the inside. At this time, the substrate holding unit 236 is at the lower substrate transfer position A, and the transfer robot 214 lowers the hand after the hand reaches directly above the stage 268, so that the substrate W is placed on the support arm 270. Place on. Then, the hand of the transfer robot 214 is moved away through the substrate loading / unloading port 250.

After the hand of the transfer robot 214 is completely withdrawn, the cup 240 is raised and at the same time, the substrate holder 236 at the substrate transfer position A is raised to the pretreatment / cleaning position C. At this time, with this rise, the supporting arm 270
The substrate placed on the top is positioned by the pedestal 272 and the pressing piece 274, and is securely gripped by the chuck claw 276.

On the other hand, the electrode portion 228 of the electrode arm portion 230
Is in the normal position on the plating solution tray 222 at this time, and the high resistance structure 310 or the anode 298 is located in the plating solution tray 222. The supply of the plating solution to the 222 and the electrode portion 228 is started. Then, supply new plating solution until the process of plating the substrate,
At the same time, suction is performed through the plating solution discharge pipe 306 to replace the plating solution contained in the high resistance structure 310 and remove bubbles. When the cup 240 is completely lifted, the substrate loading / unloading port 250 on the side surface of the frame is closed and closed by the cup 240, and the atmosphere inside and outside the frame is shut off.

When the cup 240 moves up, the precoating process is started. That is, the substrate holding part 236 that has received the substrate W is rotated, and the precoat / recovery arm 2 that has been in the retracted position is rotated.
32 is moved to a position facing the substrate. Then, when the rotation speed of the substrate holding portion 236 reaches the set value,
A pre-coating nozzle 264 provided at the tip of the pre-coating / collecting arm 232 discharges a pre-coating liquid containing, for example, a surfactant onto the surface to be plated of the substrate. At this time, since the substrate holder 236 is rotating, the precoat liquid is spread over the entire surface of the substrate W to be plated. Next, the precoat / recovery arm 232 is returned to the retracted position, and the substrate holder 23
The rotation speed of 6 is increased, and the precoat liquid on the surface to be plated of the substrate W is shaken off and dried by centrifugal force.

After the completion of precoating, the plating process is started. First, the substrate holding portion 236 is raised to the plating position B where plating is performed with the rotation stopped or the rotation speed reduced to the plating speed. Then, the peripheral edge of the substrate W comes into contact with the cathode electrode 288 to be able to conduct electricity, and at the same time, the sealing material 290 is pressed against the upper surface of the peripheral edge of the substrate W to seal the peripheral edge of the substrate W in a watertight manner.

On the other hand, based on the signal that the pre-coating process of the loaded substrate W is completed, the electrode arm portion 230
Is horizontally swung from above the plating solution tray 222 so that the electrode portion 228 is located above the plating position, and after reaching this position, the electrode portion 228 is lowered toward the cathode portion 238. At this time, the high resistance structure 310 does not contact the plated surface of the substrate W, and
The position is close to about 5 to 3 mm. When the lowering of the electrode part 228 is completed, a plating current is supplied to supply the plating solution from the plating solution supply pipe 302 to the inside of the electrode part 228, and the plating solution injection hole 298 penetrating the anode 298.
A plating solution is supplied to the high resistance structure 310 from a. As a result, the plating solution fills the gap between the high resistance structure 310 and the surface to be plated of the substrate W, and the surface to be plated of the substrate W is plated with copper. At this time, the substrate holder 236 may be rotated at a low speed.

When the plating process is completed, the electrode arm portion 2
30 is lifted and swung to return to above the plating solution tray 222, and lowered to the normal position. Next, the precoat / recovery arm 232 is moved from the retracted position to a position facing the substrate W and lowered, and the residual plating solution on the substrate W is recovered from the plating solution recovery nozzle 266. After the recovery of the plating residual liquid is completed, the precoat / recovery arm 232 is returned to the retracted position, and pure water is rinsed from the fixed nozzle 234 for pure water to the central portion of the substrate W to rinse the plated surface of the substrate. The plating solution on the surface of the substrate W is replaced with pure water by discharging and simultaneously rotating the substrate holder 236 at an increased speed. In this way, by rinsing the substrate W, the substrate holding part 236.
It is possible to prevent the plating solution from splashing and contaminating the cathode electrode 288 of the cathode portion 238 when lowering the plating electrode from the plating position B.

After the rinsing is completed, a water washing process is started. That is, the substrate holder 236 is moved from the plating position B to the pretreatment / cleaning position C.
Then, the substrate holding portion 236 and the cathode portion 238 are rotated while supplying pure water from the fixed nozzle 234 for pure water to wash with water. At this time, the sealing material 290 and the cathode electrode 288 can be cleaned at the same time as the substrate W by the pure water directly supplied to the cathode part 238 or the pure water scattered from the surface of the substrate W.

After completion of washing with water, a dry process is started. That is, the supply of pure water from the fixed nozzle 234 is stopped, the rotation speeds of the substrate holding portion 236 and the cathode portion 238 are further increased, and the pure water on the substrate surface is shaken off by the centrifugal force to be dried. At the same time, the sealing material 290 and the cathode electrode 288 are also dried. When the dry process is completed, the substrate holder 236
And stopping the rotation of the cathode part 238,
36 is lowered to the substrate transfer position A. Then, the grip of the substrate W by the chuck claw 276 is released, and the substrate W is
It is in a state of being placed on the upper surface of the support arm 270. At the same time, the cup 240 is also lowered.

With the above, all the processes of the plating process and the pretreatments accompanying it and the cleaning / drying process are completed, and the transfer robot 2
The substrate 14 receives the processed substrate W from the substrate holder 236 by inserting the hand from the substrate loading / unloading port 250 to the lower side of the substrate W and raising it. Then, the transfer robot 214 returns the processed substrate W received from the substrate holding unit 236 to the load / unload unit 210.

FIG. 30 is a plan layout view of another substrate processing apparatus equipped with the above-described electrolytic processing apparatus. As shown,
This substrate processing apparatus includes a carry-in / carry-out area 520 for delivering and receiving a substrate cassette containing a semiconductor substrate, a process area 530 for carrying out process processing, and a cleaning / drying area 5 for cleaning and drying the semiconductor substrate after the process processing.
40 is provided. The cleaning / drying area 540 is arranged between the loading / unloading area 520 and the process area 530. Loading / unloading area 520 and washing / drying area 5
40 is provided with a partition 521, and a partition 523 is provided between the cleaning / drying area 540 and the process area 530.

The partition 521 has a loading / unloading area 520.
A passage (not shown) for transferring the semiconductor substrate is provided between the cleaning and drying area 540 and a shutter 522 for opening and closing the passage. In addition, the partition wall 523
Also, a passage (not shown) for transferring the semiconductor substrate is provided between the cleaning / drying area 540 and the process area 530, and a shutter 524 for opening and closing the passage is provided. Cleaning / drying area 540 and process area 53
0 can supply and exhaust air independently.

The substrate processing apparatus for wiring a semiconductor substrate having the above-mentioned configuration is installed in a clean room, and the pressure in each area is (pressure in loading / unloading area 520)> (pressure in cleaning / drying area 540)> (process area) (The pressure of 530) and the pressure of the carry-in / carry-out area 520 is set lower than the pressure in the clean room. This allows
Prevent air from flowing from the process area 530 to the cleaning / drying area 540, and prevent air from flowing from the cleaning / drying area 540 to the loading / unloading area 520,
Further, air is prevented from flowing out of the carry-in / carry-out area 520 into the clean room.

The loading / unloading area 520 has a load unit 52 for accommodating a substrate cassette accommodating semiconductor substrates.
0a and unload unit 520b are arranged.
In the cleaning / drying area 540, two water washing sections 541 and two drying sections 542 for performing post-plating processing are arranged, and a transfer section (transfer robot) for transferring semiconductor substrates.
543 is provided. As the water washing section 541, for example, a pencil type with a sponge on the front end or a roller type with a sponge is used. Drying part 5
As 42, for example, a type in which a semiconductor substrate is spun at high speed to dehydrate and dry is used.

In the process area 530, there are arranged a pretreatment tank 531 for pretreatment of semiconductor substrate plating and a plating apparatus (plating apparatus using the electrolytic treatment apparatus of the present invention) 532 for copper plating treatment. In addition, a transfer unit (transfer robot) 533 that transfers the semiconductor substrate is provided.

FIG. 31 shows the flow of airflow in the substrate processing apparatus. In the cleaning / drying area 540, piping 546
Fresher external air is taken in and high performance filter 544
Is pressed by a fan through the ceiling 540a, and the washing section 541 and the drying section 5 are provided as clean air having a downflow from the ceiling 540a.
It is supplied around 42. Most of the clean air supplied is supplied from the floor 540b to the ceiling 54 through the circulation pipe 545.
It is returned to the 0a side, pushed again by the fan through the high-performance filter 544, and circulates in the cleaning / drying area 540. Part of the airflow is the washing part 541 and the drying part 542.
The air is exhausted from the inside through the duct 552.

Although the process area 530 is called a wet zone, particles are not allowed to adhere to the surface of the semiconductor substrate. Therefore, the process area 530
Particles are prevented from adhering to the semiconductor substrate by being pushed in by a fan from the ceiling 530a and flowing down-flow clean air through the high-performance filter 533.

However, if the total flow rate of the clean air that forms the downflow depends on the supply / exhaust from the outside,
A huge amount of air supply and exhaust is required. For this reason, only the exhaust that maintains the negative pressure in the room is used as the external exhaust from the duct 553, and most of the downflow air is supplied to the pipes 534 and 53.
Circulating airflow through 5 is used to cover the situation.

When the circulating air flow is used, the process area 5
The clean air that has passed through 30 contains the chemical liquid mist and gas, so the clean air is passed through the scrubber 536 and the mito separator 53.
Remove through 7,538. As a result, the ceiling 530a
The air that has returned to the side circulation duct 534 does not contain the chemical mist or gas, is pushed again by the fan, passes through the high-performance filter 533, and circulates in the process area 530 as clean air.

A part of the air that has passed through the process area 530 from the floor portion 530b is discharged to the outside through the duct 553, and the air containing the chemical mist and gas is discharged to the outside through the duct 553. Duct 539 on the ceiling 530a
From the above, fresh air corresponding to these exhaust amounts is supplied to the process area 530 to such an extent that the negative pressure is maintained.

As described above, the respective pressures of the loading / unloading area 520, the cleaning / drying area 540 and the process area 530 are as follows: (pressure of loading / unloading area 520)> (pressure of cleaning / drying area 540)> (process Area 530 pressure). Therefore, the shutters 522, 524
When the air flow between these areas is opened (see FIG. 30), the loading / unloading area 52, as shown in FIG.
0, cleaning / drying area 540 and process area 530
Flow in order. Further, the exhaust gas is collected in the collective exhaust duct 554 through the ducts 552 and 553, as shown in FIG.

FIG. 33 is an external view showing an example in which the substrate processing apparatus is arranged in a clean room. Cassette delivery port 555 and operation panel 55 in the loading / unloading area 520
A side face 6 is exposed to a working zone 558 having a high cleanliness of a clean room partitioned by a partition wall 557, and the other side faces are housed in a utility zone 559 having a low cleanness.

As described above, the cleaning / drying area 540, the loading / unloading area 520, and the process area 530 are arranged, and the loading / unloading area 520 and the cleaning / drying area 5 are arranged.
40 and between the cleaning / drying area 540 and the process area 530 are provided with partition walls 521 and 523, respectively. Therefore, in a dry state from the working zone 558 through the cassette delivery port 555 into the substrate processing apparatus for semiconductor substrate wiring. The semiconductor substrate to be carried in is plated in the substrate processing apparatus, and is carried out to the working zone 558 in a cleaned and dried state, so that the surface of the semiconductor substrate is free from particles and mist and is clean in a clean room. The highly frequent working zone 558 is not contaminated with particles, chemicals, or cleaning liquid mist.

In FIGS. 30 and 31, the substrate processing apparatus has a loading / unloading area 520 and a cleaning / drying area 54.
0, the example in which the process area 530 is provided is shown, but an area in which the CMP device is arranged is provided in the process area 530 or adjacent to the process area 530, and the process area 530 or the area in which the CMP device is arranged and the carry-in / carry-out. A cleaning / drying area 540 may be arranged between the areas 520. The point is that the semiconductor substrate may be loaded into the substrate processing apparatus for wiring the semiconductor substrate in a dry state, and the semiconductor substrate after the plating process may be washed and discharged in a dry state.

In the above example, the substrate processing apparatus has been described by taking the plating apparatus for semiconductor substrate wiring as an example. However, the substrate is not limited to the semiconductor substrate, and the portion to be plated is also formed on the substrate surface. It is not limited to the wiring part. Further, in the above example, copper plating was described as an example, but the invention is not limited to copper plating.

FIG. 34 is a diagram showing a planar structure of another substrate processing apparatus for wiring a semiconductor substrate. As shown in the figure, a substrate processing apparatus for wiring a semiconductor substrate includes a carry-in section 601 for carrying in a semiconductor substrate, a copper plating apparatus for performing copper plating (plating apparatus using the electrolytic processing apparatus of the present invention) 602, and water washing. Washing tanks 603, 604, chemical mechanical polishing (CM
PMP part 605 for performing P), water washing tanks 606 and 607, a drying tank 608, and a carry-out section 609 for carrying out the semiconductor substrate on which the wiring layer formation has been completed. Are arranged as one device to form a substrate processing device for semiconductor substrate wiring.

In the substrate processing apparatus having the above arrangement, the substrate transfer means takes out the semiconductor substrate on which the wiring layer is not formed from the substrate cassette 601-1 placed on the carry-in section 601 and transfers it to the copper plating device 602. To do. In the copper plating apparatus 602, a copper plating layer is formed on the surface of the semiconductor substrate W including the wiring portion including wiring grooves and wiring holes (contact holes).

The semiconductor substrate W, on which the copper plating layer has been formed by the copper plating apparatus 602, is washed by the substrate transfer means with a water bath 6.
03 and the washing tank 604 to wash with water. Subsequently, the semiconductor substrate W, which has been washed with water, is subjected to CMP by the substrate transfer means.
Then, the CMP section 605 removes the copper plating layer on the surface of the semiconductor substrate W in the CMP section 605, leaving the copper plating layer formed in the wiring groove and the wiring hole from the copper plating layer.

Subsequently, the semiconductor substrate in which the unnecessary copper plating layer on the surface of the semiconductor substrate W has been removed leaving the copper plating layer formed in the wiring portion including the wiring groove and the wiring hole from the copper plating layer as described above. W is sent to the washing tank 606 and the washing tank 607 by the substrate transfer means, washed with water, and the semiconductor substrate W that has been washed with water is dried in the drying tank 608, and the dried semiconductor substrate W is formed into a wiring layer. The finished semiconductor substrate is stored in the substrate cassette 609-1 of the carry-out section 609.

[0093]

As described above in detail, according to the present invention, the electric resistance between the anode and the cathode submerged in the electrolytic solution is higher than that in the case where only the electrolytic solution is provided through the high resistance structure. By increasing the height, the in-plane difference in the current density due to the electric resistance on the surface of the substrate to be processed can be reduced, and thereby the in-plane uniformity of the substrate to be processed by the electrolytic treatment can be further enhanced.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a conventional electrolytic plating apparatus.

2 is an electrical equivalent circuit diagram of the electrolytic plating apparatus shown in FIG.

FIG. 3 is a diagram showing a film thickness distribution of a plating film in a substrate surface when electrolytic plating of copper is performed on a substrate on which conductive layers having different thicknesses are formed by using the electrolytic plating apparatus shown in FIG. .

FIG. 4 is a diagram showing a film thickness distribution of a plating film in a substrate surface when copper electrolytic plating is applied to substrates of different sizes using the electrolytic plating apparatus shown in FIG.

FIG. 5 is a schematic view of a main part of an electrolytic treatment apparatus applied to the electrolytic plating apparatus according to the first embodiment of the present invention.

6 is an electrically equivalent circuit diagram of the electrolytic plating apparatus shown in FIG.

FIG. 7 is a diagram showing a film thickness distribution of a plated film in a substrate surface when plating is performed by the electrolytic plating apparatus shown in FIG. 5 and a conventional electrolytic plating apparatus.

FIG. 8 is a schematic view of a main part of an electrolytic treatment apparatus applied to an electrolytic plating apparatus according to a second embodiment of the present invention.

FIG. 9 is a schematic view of a main part of an electrolytic treatment apparatus applied to an electrolytic plating apparatus according to a third embodiment of the present invention.

FIG. 10 is a schematic view showing a method of forming a through hole in a PTFE resin plate by SR photo-etching technology.

11A and 11B are diagrams showing a fluorinated polymer material 24. FIG. 11A is a schematic perspective view and FIG. 11B is an enlarged sectional view of a main part.

FIG. 12 is a plan view showing an entire substrate processing apparatus including the electrolytic processing apparatus of the present invention.

FIG. 13 is a plan view showing a plating unit 212.

14 is a cross-sectional view taken along the line AA of FIG.

FIG. 15 is an enlarged cross-sectional view of a substrate holding portion 236 and a cathode portion 238.

FIG. 16 is a front view of FIG.

FIG. 17 is a right side view of FIG.

FIG. 18 is a rear view of FIG.

FIG. 19 is a left side view of FIG.

FIG. 20 is a front view showing a precoat / recovery arm 232.

FIG. 21 is a plan view of the substrate holder 236.

22 is a cross-sectional view taken along the line BB of FIG.

23 is a cross-sectional view taken along the line CC of FIG.

FIG. 24 is a plan view of the cathode portion 238.

25 is a cross-sectional view taken along line DD of FIG.

FIG. 26 is a plan view of an electrode arm portion 230.

27 is a vertical sectional front view of FIG. 26. FIG.

28 is a cross-sectional view taken along the line EE of FIG.

FIG. 29 is an enlarged view showing a part of FIG. 28 in an enlarged manner.

FIG. 30 is a plan layout view of another substrate processing apparatus including the electrolytic processing apparatus of the present invention.

FIG. 31 is a diagram showing the flow of airflow in the substrate processing apparatus shown in FIG. 30.

FIG. 32 is a diagram showing an air flow between areas of the substrate processing apparatus shown in FIG. 30.

33 is an external view showing an example in which the substrate processing apparatus shown in FIG. 30 is arranged in a clean room.

FIG. 34 is a plan configuration diagram of another substrate processing apparatus.

[Explanation of symbols]

W substrate (substrate to be processed) S conductive layer (seed layer) 10 Plating solution (electrolytic solution) 12 plating tank 14 Anode plate 16 Plating solution receiver 18 lip seal 20 contacts 22 High resistance structure 24 Fluoropolymer material 24a through hole 26 Plating power supply 30 board mount 32 Holder 34 Lip Seal 36 contacts 38 Anode plate 38a through hole 39 Plating solution inlet 40 High resistance structure 42 Fluorine-based polymer material S1 gap 44 First plating room S2 gap 46 Second plating room 40-1, High resistance structure 42-1, Fluorine-based polymer material 45 black film

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 4K024 AA09 AB02 AB15 BA11 BB12                       BC10 CA06 CB06 CB07 CB21                       CB26 DA04 DB10 GA16                 4M104 BB09 DD52

Claims (7)

[Claims] 1. At least a part of an electrolytic solution filled between a substrate to be processed having a contact point between one electrode of an anode and a cathode and the other electrode facing the substrate to be processed, and at least a part of the electrolyte of the electrolytic solution. In an electrolytic treatment method of providing a high resistance structure having an electric conductivity lower than that of conductivity to perform an electrolytic treatment of a surface of a substrate to be processed, an electrolytic treatment characterized by using a fluorine-based polymer material as the high resistance structure. Method. 2. The high resistance structure made of the fluorine-based polymer material is provided with a large number of through holes from the other electrode toward the substrate to be processed by fine processing using synchrotron light. The electrolytic treatment method according to claim 1. 3. The distribution and / or inner diameter of the through holes is controlled so that the surface of the substrate to be processed is in a desired processing state when a current is applied between the other electrode and the substrate to be processed. 3. The electrolytic treatment method according to claim 2, wherein the electrolytic treatment state of each part of the surface of the substrate to be treated is set to a desired treatment state. 4. At least a part of an electrolytic solution filled between a substrate to be processed having a contact point between one electrode of an anode and a cathode and the other electrode facing the substrate to be processed, and at least a part of the electrolytic solution containing electricity. In an electrolytic treatment apparatus for providing a high resistance structure having an electric conductivity lower than that of conductivity to perform an electrolytic treatment of a surface of a substrate to be processed, the high resistance structure is made of a fluorine-based polymer material. Electrolytic treatment equipment. 5. The high resistance structure made of a fluoropolymer material is provided with a large number of through holes extending from the other electrode toward the substrate to be processed. Electrolytic treatment equipment. 6. The electrolytic treatment apparatus according to claim 5, wherein the high resistance structure is surface-treated so as to have hydrophilicity and contains the electrolytic solution. 7. The high resistance structure is composed of at least two or more layers of high resistance structure, and the distribution of the through holes of the high resistance structure of each layer is defined as the distribution of the through holes of the high resistance structure of another layer. The electrolytic processing apparatus according to claim 5, wherein the electrolytic processing apparatuses have different distributions.